14.5www.zzz13.com
www.zzz13.com 时间:2021-03-22 阅读:()
QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-1of16-www.
qorvo.
comKeyFeaturesFrequency:1.
2to1.
4GHzOutputPower(P3dB)1:313W(CW),468W(Pulsed)LinearGain1:17.
5dB(CW),17.
8dB(Pulsed)TypicalDEFF3dB1:55%(CW),62.
2%(Pulsed)OperatingVoltage:45V(CW),50V(Pulsed)LowthermalresistancepackagePulsecapableNote1:@1.
3GHz,25°CNI-50CWProductOverviewTheQPD1006isa450W(P3dB)internallymatcheddiscreteGaNonSiCHEMTwhichoperatesfrom1.
2to1.
4GHzanda50Vsupplyrail.
ThedeviceisGaNIMFETfullymatchedto50Ωinanindustrystandardaircavitypackageandisideallysuitedformilitaryandcivilianradar.
ThedevicecansupportpulsedandCWoperations.
ROHScompliant.
Evaluationboardsareavailableuponrequest.
FunctionalBlockDiagramApplicationsMilitaryradarCivilianradarPartNo.
DescriptionQPD10061.
2–1.
4GHzRFIMFETQPD1006EVB4EvaluationBoardQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-2of16-www.
qorvo.
comAbsoluteMaximumRatings1ParameterRatingUnitsBreakdownVoltage,BVDG+145VGateVoltageRange,VG-7to+2VDrainCurrent60AGateCurrentRange,IGSeepage4.
mAPowerDissipation,10%DC1mSPW,PDISS496WRFInputPower,10%DC1mSPW,1.
3GHz,T=25°C+46dBmMountingTemperature(30Seconds)320°CStorageTemperature65to+150°CNotes:1.
Operationofthisdeviceoutsidetheparameterrangesgivenabovemaycausepermanentdamage.
RecommendedOperatingConditions1ParameterMinTypMaxUnitsOperatingTemp.
Range40+25+85°CDrainVoltageRange,VD+28+50+55VDrainBiasCurrent,IDQ–750–mADrainCurrent,ID–14–AGateVoltage,VG4–2.
7–VPowerDissipation,Pulsed(PD)2,3––445WPowerDissipation,CW(PD)2––299WNotes:1.
Electricalperformanceismeasuredunderconditionsnotedintheelectricalspecificationstable.
Specificationsarenotguaranteedoverallrecommendedoperatingconditions.
2.
Packagebaseat85°C.
3.
PulseWidth=300uS,DutyCycle=30%.
4.
TobeadjustedtodesiredIDQ.
RFCharacterization–EVBCWPerformanceAt1.
3GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–17.
3–dBOutputPowerat3dBcompressionpoint,P3dB–54.
9–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–54.
6–%Gainat3dBcompressionpoint,G3dB–14.
3–dBNotes:1.
VD=+45V,IDQ=750mA,TA=25°CRFCharacterization–EVBCWPerformanceAt1.
4GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–17.
5–dBOutputPowerat3dBcompressionpoint,P3dB–54.
7–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–49.
4–%Gainat3dBcompressionpoint,G3dB–14.
5–dBNotes:1.
VD=+45V,IDQ=750mA,TA=25°CRFCharacterization–EVBCWPerformanceAt1.
2GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–17.
5–dBOutputPowerat3dBcompressionpoint,P3dB–55.
4–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–56.
2–%Gainat3dBcompressionpoint,G3dB–14.
5–dBNotes:1.
VD=+45V,IDQ=750mA,TA=25°CQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-3of16-www.
qorvo.
comRFCharacterization–EVBPulsedPerformanceAt1.
2GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–17.
8–dBOutputPowerat3dBcompressionpoint,P3dB–57.
1–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–62.
8–%Gainat3dBcompressionpoint,G3dB–14.
8–dBNotes:2.
VD=+50V,IDQ=750mA,TA=+25°C,PW=300uS,DC=30%RFCharacterization–EVBPulsedPerformanceAt1.
4GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–17.
8–dBOutputPowerat3dBcompressionpoint,P3dB–57.
1–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–59.
6–%Gainat3dBcompressionpoint,G3dB–14.
8–dBNotes:1.
VD=+50V,IDQ=750mA,TA=+25°C,PW=300uS,DC=30%RFCharacterization–MismatchRuggednessat1.
3GHz1SymbolParameterdBCompressionTypicalVSWRImpedanceMismatchRuggedness310:1Notes:1.
Testconditionsunlessotherwisenoted:TA=25°C,VD=50V,IDQ=750mA,100uSPW,10%DC2.
DrivinginputpowerisdeterminedatpulsedcompressionundermatchedconditionatEVBoutputconnector.
RFCharacterization–EVBPulsedPerformanceAt1.
3GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–17.
8–dBOutputPowerat3dBcompressionpoint,P3dB–56.
7–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–62.
0–%Gainat3dBcompressionpoint,G3dB–14.
8–dBNotes:1.
VD=+50V,IDQ=750mA,TA=+25°C,PW=300uS,DC=30%QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-4of16-www.
qorvo.
comMaximumGateCurrentQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-5of16-www.
qorvo.
com1RefertothefollowingdocumentGaNDeviceChannelTemperature,ThermalResistance,andReliabilityEstimatesThermalandReliabilityInformation–PulsedParameterConditionsValuesUnitsThermalResistance,IR1(θJC)85°Cbacksidetemperature331WPdiss,200uSPW,20%DC0.
23°C/WPeakIRSurfaceTemperature1(TCH)160°CThermalResistance,IR1(θJC)85°Cbacksidetemperature331WPdiss,300uSPW,30%DC0.
27°C/WPeakIRSurfaceTemperature1(TCH)173°CQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-6of16-www.
qorvo.
com1RefertothefollowingdocumentGaNDeviceChannelTemperature,ThermalResistance,andReliabilityEstimatesThermalandReliabilityInformation–CWParameterConditionsValuesUnitsThermalResistance,IR1(θJC)85°Cbacksidetemperature86.
4WPdiss,CW0.
35°C/WPeakIRSurfaceTemperature1(TCH)116°CThermalResistance,IR1(θJC)85°Cbacksidetemperature177.
8WPdiss,CW0.
38°C/WPeakIRSurfaceTemperature1(TCH)151°CThermalResistance,IR1(θJC)85°Cbacksidetemperature259.
2WPdiss,CW0.
41°C/WPeakIRSurfaceTemperature1(TCH)190°CThermalResistance,IR1(θJC)85°Cbacksidetemperature345.
6WPdiss,CW0.
43°C/WPeakIRSurfaceTemperature1(TCH)235°CQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-7of16-www.
qorvo.
comCWPowerDrive-upPerformanceOverTemperaturesOf1.
2–1.
4GHzEVB1Notes:1.
VD=45V,IDQ=750mA.
QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-8of16-www.
qorvo.
comCWPowerDrive-upPerformanceAt25°COf1.
2–1.
4GHzEVB1Notes:1.
VD=45V,IDQ=750mA.
QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-9of16-www.
qorvo.
comPulsedPowerDrive-upPerformanceOverTemperaturesOf1.
2–1.
4GHzEVB1Notes:1.
VD=50V,IDQ=750mA,PW=300uS,DC=30%.
QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-10of16-www.
qorvo.
comPowerDrive-upPerformanceAt25°COf1.
2–1.
4GHzEVB1Notes:1.
VD=50V,IDQ=750mA,PW=300uS,DC=30%.
QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-11of16-www.
qorvo.
comNotes:1.
TheQPD1006willbemarkedwiththe"1006"designatorandalotcodemarkedbelowthepartdesignator.
The"YY"representsthelasttwodigitsofthecalendaryearthepartwasmanufactured,the"WW"istheworkweekoftheassemblylotstart,the"MXXX"istheproductionlotnumber.
"ZZZ"istheuniqueserialnumber.
PinConfigurationandDescription,andPackageMarking1PinDescriptionPinSymbolDescription1VG/RFINGatevoltage/RFInput2VD/RFOUTDrainvoltage/RFOutput3GNDPackagebase/Ground2Load-pullReferencePlanes13QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-12of16-www.
qorvo.
comPackageDimensions1,2,3Notes:1.
Unlessotherwisenoted,thetoleranceis±0.
15mm.
2.
Forinstructiontomountthepart,pleaserefertoapplicationnote"RF565PackageMounting,MechanicalMountingandPCBConsiderations.
"3.
Material:PackageBase:MetalPackageLid:Ceramic4.
Packageexposedmetallizationisgoldplated.
5.
Partisepoxysealed.
6.
Bodydimensionsdonotincludelidshiftorepoxyrunoutwhichcanbeupto0.
5mmperside.
QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-13of16-www.
qorvo.
comSchematic–1.
2–1.
4GHzEVBBias-upProcedureBias-downProcedure1.
SetVGto-4V.
1.
TurnoffRFsignal.
2.
SetIDcurrentlimitto800mA.
2.
TurnoffVD3.
Apply50VVD.
3.
Wait2secondstoallowdraincapacitortodischarge4.
SlowlyadjustVGuntilIDissetto750mA.
4.
TurnoffVG5.
SetIDcurrentlimitto7A6.
ApplyRF.
QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-14of16-www.
qorvo.
com1.
2–1.
4GHzEVB1,2Notes:1.
PCBMaterial:RO4350B,20milthickness,1ozcoppercladding2.
Forgoodpulsedoperation,anadditional3300uF,100Velectrolyticcapacitorisrequiredonthedrainsupplyline.
BillOfmaterial–1.
2–1.
4GHzPulsedorCWEVBRefDesValueQtyManufacturerPartNumberC1,C2,C6,C733pF4ATC600F330JT250XTC4,C90.
1uF2TDKC3216X7R2A104K160AAC3,C8240pF2AVXUQCFVA241JAT2A\500C11,C12,C13220uF3UnitedChemiconEMVY500ADA221MJA03C5,C1010uF2TDKC5750X7S2A106M230KBR1100Ohm1Kamaya,IncRMC1/10-101JTPR210Ohm1VishayCRCW080510R0JNTAQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-15of16-www.
qorvo.
comRecommendedSolderTemperatureProfileQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-16of16-www.
qorvo.
comHandlingPrecautionsParameterRatingStandardCaution!
ESD-SensitiveDeviceESD–HumanBodyModel(HBM)1000VANSI/ESD/JEDECJS-001ESD–ChargedDeviceModel(CDM)1000VANSI/ESD/JEDECJS-002MSL–MoistureSensitivityLevelMSL3IPC/JEDECJ-STD-020ImportantNoticeTheinformationcontainedhereinisbelievedtobereliable;however,Qorvomakesnowarrantiesregardingtheinformationcontainedhereinandassumesnoresponsibilityorliabilitywhatsoeverfortheuseoftheinformationcontainedherein.
Allinformationcontainedhereinissubjecttochangewithoutnotice.
CustomersshouldobtainandverifythelatestrelevantinformationbeforeplacingordersforQorvoproducts.
Theinformationcontainedhereinoranyuseofsuchinformationdoesnotgrant,explicitlyorimplicitly,toanypartyanypatentrights,licenses,oranyotherintellectualpropertyrights,whetherwithregardtosuchinform4ationitselforanythingdescribedbysuchinformation.
THISINFORMATIONDOESNOTCONSTITUTEAWARRANTYWITHRESPECTTOTHEPRODUCTSDESCRIBEDHEREIN,ANDQORVOHEREBYDISCLAIMSANYANDALLWARRANTIESWITHRESPECTTOSUCHPRODUCTSWHETHEREXPRESSORIMPLIEDBYLAW,COURSEOFDEALING,COURSEOFPERFORMANCE,USAGEOFTRADEOROTHERWISE,INCLUDINGTHEIMPLIEDWARRANTIESOFMERCHANTABILITYANDFITNESSFORAPARTICULARPURPOSE.
Withoutlimitingthegeneralityoftheforegoing,Qorvoproductsarenotwarrantedorauthorizedforuseascriticalcomponentsinmedical,life-saving,orlife-sustainingapplications,orotherapplicationswhereafailurewouldreasonablybeexpectedtocauseseverepersonalinjuryordeath.
Copyright2020Qorvo,Inc.
|QorvoisaregisteredtrademarkofQorvo,Inc.
ContactInformationForthelatestspecifications,additionalproductinformation,worldwidesalesanddistributionlocations:Web:www.
qorvo.
comTel:1-844-890-8163Email:customer.
support@qorvo.
comSolderabilityCompatiblewithbothlead-free(260°Cmax.
reflowtemp.
)andtin/lead(245°Cmax.
reflowtemp.
)solderingprocesses.
Solderprofilesavailableuponrequest.
PackageleadplatingisNiAu.
Authicknessis1mminium.
RoHSComplianceThispartiscompliantwith2011/65/EURoHSdirective(RestrictionsontheUseofCertainHazardousSubstancesinElectricalandElectronicEquipment)asamendedbyDirective2015/863/EU.
Thisproductalsohasthefollowingattributes:HalogenFree(Chlorine,Bromine)AntimonyFreeTBBP-A(C15H12Br402)FreePFOSFreeSVHCFree
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-1of16-www.
qorvo.
comKeyFeaturesFrequency:1.
2to1.
4GHzOutputPower(P3dB)1:313W(CW),468W(Pulsed)LinearGain1:17.
5dB(CW),17.
8dB(Pulsed)TypicalDEFF3dB1:55%(CW),62.
2%(Pulsed)OperatingVoltage:45V(CW),50V(Pulsed)LowthermalresistancepackagePulsecapableNote1:@1.
3GHz,25°CNI-50CWProductOverviewTheQPD1006isa450W(P3dB)internallymatcheddiscreteGaNonSiCHEMTwhichoperatesfrom1.
2to1.
4GHzanda50Vsupplyrail.
ThedeviceisGaNIMFETfullymatchedto50Ωinanindustrystandardaircavitypackageandisideallysuitedformilitaryandcivilianradar.
ThedevicecansupportpulsedandCWoperations.
ROHScompliant.
Evaluationboardsareavailableuponrequest.
FunctionalBlockDiagramApplicationsMilitaryradarCivilianradarPartNo.
DescriptionQPD10061.
2–1.
4GHzRFIMFETQPD1006EVB4EvaluationBoardQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-2of16-www.
qorvo.
comAbsoluteMaximumRatings1ParameterRatingUnitsBreakdownVoltage,BVDG+145VGateVoltageRange,VG-7to+2VDrainCurrent60AGateCurrentRange,IGSeepage4.
mAPowerDissipation,10%DC1mSPW,PDISS496WRFInputPower,10%DC1mSPW,1.
3GHz,T=25°C+46dBmMountingTemperature(30Seconds)320°CStorageTemperature65to+150°CNotes:1.
Operationofthisdeviceoutsidetheparameterrangesgivenabovemaycausepermanentdamage.
RecommendedOperatingConditions1ParameterMinTypMaxUnitsOperatingTemp.
Range40+25+85°CDrainVoltageRange,VD+28+50+55VDrainBiasCurrent,IDQ–750–mADrainCurrent,ID–14–AGateVoltage,VG4–2.
7–VPowerDissipation,Pulsed(PD)2,3––445WPowerDissipation,CW(PD)2––299WNotes:1.
Electricalperformanceismeasuredunderconditionsnotedintheelectricalspecificationstable.
Specificationsarenotguaranteedoverallrecommendedoperatingconditions.
2.
Packagebaseat85°C.
3.
PulseWidth=300uS,DutyCycle=30%.
4.
TobeadjustedtodesiredIDQ.
RFCharacterization–EVBCWPerformanceAt1.
3GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–17.
3–dBOutputPowerat3dBcompressionpoint,P3dB–54.
9–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–54.
6–%Gainat3dBcompressionpoint,G3dB–14.
3–dBNotes:1.
VD=+45V,IDQ=750mA,TA=25°CRFCharacterization–EVBCWPerformanceAt1.
4GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–17.
5–dBOutputPowerat3dBcompressionpoint,P3dB–54.
7–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–49.
4–%Gainat3dBcompressionpoint,G3dB–14.
5–dBNotes:1.
VD=+45V,IDQ=750mA,TA=25°CRFCharacterization–EVBCWPerformanceAt1.
2GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–17.
5–dBOutputPowerat3dBcompressionpoint,P3dB–55.
4–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–56.
2–%Gainat3dBcompressionpoint,G3dB–14.
5–dBNotes:1.
VD=+45V,IDQ=750mA,TA=25°CQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-3of16-www.
qorvo.
comRFCharacterization–EVBPulsedPerformanceAt1.
2GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–17.
8–dBOutputPowerat3dBcompressionpoint,P3dB–57.
1–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–62.
8–%Gainat3dBcompressionpoint,G3dB–14.
8–dBNotes:2.
VD=+50V,IDQ=750mA,TA=+25°C,PW=300uS,DC=30%RFCharacterization–EVBPulsedPerformanceAt1.
4GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–17.
8–dBOutputPowerat3dBcompressionpoint,P3dB–57.
1–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–59.
6–%Gainat3dBcompressionpoint,G3dB–14.
8–dBNotes:1.
VD=+50V,IDQ=750mA,TA=+25°C,PW=300uS,DC=30%RFCharacterization–MismatchRuggednessat1.
3GHz1SymbolParameterdBCompressionTypicalVSWRImpedanceMismatchRuggedness310:1Notes:1.
Testconditionsunlessotherwisenoted:TA=25°C,VD=50V,IDQ=750mA,100uSPW,10%DC2.
DrivinginputpowerisdeterminedatpulsedcompressionundermatchedconditionatEVBoutputconnector.
RFCharacterization–EVBPulsedPerformanceAt1.
3GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–17.
8–dBOutputPowerat3dBcompressionpoint,P3dB–56.
7–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–62.
0–%Gainat3dBcompressionpoint,G3dB–14.
8–dBNotes:1.
VD=+50V,IDQ=750mA,TA=+25°C,PW=300uS,DC=30%QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-4of16-www.
qorvo.
comMaximumGateCurrentQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-5of16-www.
qorvo.
com1RefertothefollowingdocumentGaNDeviceChannelTemperature,ThermalResistance,andReliabilityEstimatesThermalandReliabilityInformation–PulsedParameterConditionsValuesUnitsThermalResistance,IR1(θJC)85°Cbacksidetemperature331WPdiss,200uSPW,20%DC0.
23°C/WPeakIRSurfaceTemperature1(TCH)160°CThermalResistance,IR1(θJC)85°Cbacksidetemperature331WPdiss,300uSPW,30%DC0.
27°C/WPeakIRSurfaceTemperature1(TCH)173°CQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-6of16-www.
qorvo.
com1RefertothefollowingdocumentGaNDeviceChannelTemperature,ThermalResistance,andReliabilityEstimatesThermalandReliabilityInformation–CWParameterConditionsValuesUnitsThermalResistance,IR1(θJC)85°Cbacksidetemperature86.
4WPdiss,CW0.
35°C/WPeakIRSurfaceTemperature1(TCH)116°CThermalResistance,IR1(θJC)85°Cbacksidetemperature177.
8WPdiss,CW0.
38°C/WPeakIRSurfaceTemperature1(TCH)151°CThermalResistance,IR1(θJC)85°Cbacksidetemperature259.
2WPdiss,CW0.
41°C/WPeakIRSurfaceTemperature1(TCH)190°CThermalResistance,IR1(θJC)85°Cbacksidetemperature345.
6WPdiss,CW0.
43°C/WPeakIRSurfaceTemperature1(TCH)235°CQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-7of16-www.
qorvo.
comCWPowerDrive-upPerformanceOverTemperaturesOf1.
2–1.
4GHzEVB1Notes:1.
VD=45V,IDQ=750mA.
QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-8of16-www.
qorvo.
comCWPowerDrive-upPerformanceAt25°COf1.
2–1.
4GHzEVB1Notes:1.
VD=45V,IDQ=750mA.
QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-9of16-www.
qorvo.
comPulsedPowerDrive-upPerformanceOverTemperaturesOf1.
2–1.
4GHzEVB1Notes:1.
VD=50V,IDQ=750mA,PW=300uS,DC=30%.
QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-10of16-www.
qorvo.
comPowerDrive-upPerformanceAt25°COf1.
2–1.
4GHzEVB1Notes:1.
VD=50V,IDQ=750mA,PW=300uS,DC=30%.
QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-11of16-www.
qorvo.
comNotes:1.
TheQPD1006willbemarkedwiththe"1006"designatorandalotcodemarkedbelowthepartdesignator.
The"YY"representsthelasttwodigitsofthecalendaryearthepartwasmanufactured,the"WW"istheworkweekoftheassemblylotstart,the"MXXX"istheproductionlotnumber.
"ZZZ"istheuniqueserialnumber.
PinConfigurationandDescription,andPackageMarking1PinDescriptionPinSymbolDescription1VG/RFINGatevoltage/RFInput2VD/RFOUTDrainvoltage/RFOutput3GNDPackagebase/Ground2Load-pullReferencePlanes13QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-12of16-www.
qorvo.
comPackageDimensions1,2,3Notes:1.
Unlessotherwisenoted,thetoleranceis±0.
15mm.
2.
Forinstructiontomountthepart,pleaserefertoapplicationnote"RF565PackageMounting,MechanicalMountingandPCBConsiderations.
"3.
Material:PackageBase:MetalPackageLid:Ceramic4.
Packageexposedmetallizationisgoldplated.
5.
Partisepoxysealed.
6.
Bodydimensionsdonotincludelidshiftorepoxyrunoutwhichcanbeupto0.
5mmperside.
QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-13of16-www.
qorvo.
comSchematic–1.
2–1.
4GHzEVBBias-upProcedureBias-downProcedure1.
SetVGto-4V.
1.
TurnoffRFsignal.
2.
SetIDcurrentlimitto800mA.
2.
TurnoffVD3.
Apply50VVD.
3.
Wait2secondstoallowdraincapacitortodischarge4.
SlowlyadjustVGuntilIDissetto750mA.
4.
TurnoffVG5.
SetIDcurrentlimitto7A6.
ApplyRF.
QPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-14of16-www.
qorvo.
com1.
2–1.
4GHzEVB1,2Notes:1.
PCBMaterial:RO4350B,20milthickness,1ozcoppercladding2.
Forgoodpulsedoperation,anadditional3300uF,100Velectrolyticcapacitorisrequiredonthedrainsupplyline.
BillOfmaterial–1.
2–1.
4GHzPulsedorCWEVBRefDesValueQtyManufacturerPartNumberC1,C2,C6,C733pF4ATC600F330JT250XTC4,C90.
1uF2TDKC3216X7R2A104K160AAC3,C8240pF2AVXUQCFVA241JAT2A\500C11,C12,C13220uF3UnitedChemiconEMVY500ADA221MJA03C5,C1010uF2TDKC5750X7S2A106M230KBR1100Ohm1Kamaya,IncRMC1/10-101JTPR210Ohm1VishayCRCW080510R0JNTAQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-15of16-www.
qorvo.
comRecommendedSolderTemperatureProfileQPD1006450W,50V,1.
2–1.
4GHz,GaNRFIMFETDatasheetRev.
E,Oct1,2020|Subjecttochangewithoutnotice-16of16-www.
qorvo.
comHandlingPrecautionsParameterRatingStandardCaution!
ESD-SensitiveDeviceESD–HumanBodyModel(HBM)1000VANSI/ESD/JEDECJS-001ESD–ChargedDeviceModel(CDM)1000VANSI/ESD/JEDECJS-002MSL–MoistureSensitivityLevelMSL3IPC/JEDECJ-STD-020ImportantNoticeTheinformationcontainedhereinisbelievedtobereliable;however,Qorvomakesnowarrantiesregardingtheinformationcontainedhereinandassumesnoresponsibilityorliabilitywhatsoeverfortheuseoftheinformationcontainedherein.
Allinformationcontainedhereinissubjecttochangewithoutnotice.
CustomersshouldobtainandverifythelatestrelevantinformationbeforeplacingordersforQorvoproducts.
Theinformationcontainedhereinoranyuseofsuchinformationdoesnotgrant,explicitlyorimplicitly,toanypartyanypatentrights,licenses,oranyotherintellectualpropertyrights,whetherwithregardtosuchinform4ationitselforanythingdescribedbysuchinformation.
THISINFORMATIONDOESNOTCONSTITUTEAWARRANTYWITHRESPECTTOTHEPRODUCTSDESCRIBEDHEREIN,ANDQORVOHEREBYDISCLAIMSANYANDALLWARRANTIESWITHRESPECTTOSUCHPRODUCTSWHETHEREXPRESSORIMPLIEDBYLAW,COURSEOFDEALING,COURSEOFPERFORMANCE,USAGEOFTRADEOROTHERWISE,INCLUDINGTHEIMPLIEDWARRANTIESOFMERCHANTABILITYANDFITNESSFORAPARTICULARPURPOSE.
Withoutlimitingthegeneralityoftheforegoing,Qorvoproductsarenotwarrantedorauthorizedforuseascriticalcomponentsinmedical,life-saving,orlife-sustainingapplications,orotherapplicationswhereafailurewouldreasonablybeexpectedtocauseseverepersonalinjuryordeath.
Copyright2020Qorvo,Inc.
|QorvoisaregisteredtrademarkofQorvo,Inc.
ContactInformationForthelatestspecifications,additionalproductinformation,worldwidesalesanddistributionlocations:Web:www.
qorvo.
comTel:1-844-890-8163Email:customer.
support@qorvo.
comSolderabilityCompatiblewithbothlead-free(260°Cmax.
reflowtemp.
)andtin/lead(245°Cmax.
reflowtemp.
)solderingprocesses.
Solderprofilesavailableuponrequest.
PackageleadplatingisNiAu.
Authicknessis1mminium.
RoHSComplianceThispartiscompliantwith2011/65/EURoHSdirective(RestrictionsontheUseofCertainHazardousSubstancesinElectricalandElectronicEquipment)asamendedbyDirective2015/863/EU.
Thisproductalsohasthefollowingattributes:HalogenFree(Chlorine,Bromine)AntimonyFreeTBBP-A(C15H12Br402)FreePFOSFreeSVHCFree
- 14.5www.zzz13.com相关文档
- TIwww.zzz13.com
- planwww.zzz13.com
- 25.2www.zzz13.com
- 51.2www.zzz13.com
- Operationalwww.zzz13.com
- PINOUTwww.zzz13.com
腾讯云轻量服务器老用户续费优惠和老用户复购活动
继阿里云服务商推出轻量服务器后，腾讯云这两年对于轻量服务器的推广力度还是比较大的。实际上对于我们大部分网友用户来说，轻量服务器对于我们网站和一般的业务来说是绝对够用的。反而有些时候轻量服务器的带宽比CVM云服务器够大，配置也够好，更有是价格也便宜，所以对于初期的网站业务来说轻量服务器是够用的。这几天UCLOUD优刻得香港服务器稳定性不佳，于是有网友也在考虑搬迁到腾讯云服务器商家，对于轻量服务器官方...
IonSwitch：$1.75/月KVM-1GB/10G SSD/1TB/爱达荷州
IonSwitch是一家2016年成立的国外VPS主机商，部落上一次分享的信息还停留在2019年，主机商提供基于KVM架构的VPS产品，数据中心之前在美国西雅图，目前是美国爱达荷州科德阿伦(美国西北部，西接华盛顿州和俄勒冈州)，为新建的自营数据中心。商家针对新数据中心运行及4号独立日提供了一个5折优惠码，优惠后最低1GB内存套餐每月仅1.75美元起。下面列出部分套餐配置信息。CPU：1core内存...
hostkvm：7折优惠-香港VPS韩国VPS，8折优惠-日本软银、美国CN2 GIA、新加坡直连VPS
hostkvm本月对香港国际线路的VPS、韩国CN2+bgp线路的VPS正在做7折终身优惠，对日本软银线路、美国CN2 GIA线路、新加坡直连线路的VPS进行8折终身优惠促销。所有VPS从4G内存开始支持Windows系统，当然主流Linux发行版是绝对不会缺席的！官方网站：https://hostkvm.com香港国际线路、韩国，7折优惠码：2021summer日本、美国、新加坡，8折优惠码：2...
www.zzz13.com为你推荐
-
京沪高铁上市首秀我能买京沪高铁股票吗newworldtheworld中文是什么意思网红名字被抢注球星名字被抢注合法合理吗？广东GDP破10万亿__年,我国国内生产总值(GDP)首破10万亿元.目前,我国经济总量排名世界第___位?李子柒年入1.6亿李子柒男朋友是谁，李子柒父母怎么去世的？原代码源代码是什么意思啊haole16.com高手们帮我看看我的新网站WWW.16mngt.com怎么不被收录啊？mole.61.com摩尔大陆？？？？？www.kanav001.com长虹V001手机小游戏下载的网址是什么yinrentangweichentang产品功效好不好？