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QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice1of23www.
qorvo.
comProductFeaturesFrequency:DCto3.
2GHzOutputPower(P3dB)1:162WLinearGain1:17.
5dBTypicalDEFF3dB1:74%OperatingVoltage:50VLowthermalresistancepackageCWandPulsecapableNote:1@2GHzGeneralDescriptionTheQPD1008isa125W(P3dB)widebandunmatcheddiscreteGaNonSiCHEMTwhichoperatesfromDCto3.
2GHzwitha50Vsupplyrail.
Thedeviceisinanindustrystandardaircavitypackageandisideallysuitedformilitaryandcivilianradar,landmobileandmilitaryradiocommunications,avionics,andtestinstrumentation.
Thedevicecansupportpulsed,CW,andlinearoperation.
Lead-freeandROHScompliantEvaluationboardsareavailableuponrequest.
FunctionalBlockDiagramApplicationsMilitaryradarCivilianradarLandmobileandmilitaryradiocommunicationsTestinstrumenationWidebandornarrowbandamplifiersJammersAvionicsPartNo.
DescriptionQPD1008DC–3.
2GHzRFTransistorQPD1008PCB4B010.
96–1.
215GHzEVBQPD1008EVB21.
1–1.
5GHzEVBQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice2of23www.
qorvo.
comAbsoluteMaximumRatings1ParameterRatingUnitsBreakdownVoltage,BVD+145VGateVoltageRange,VG-7to+2VDrainCurrent,IDMAX20.
4AGateCurrentRange,IGSeepage4.
mAPowerDissipation,CW,PDISS,BaseTemperature=85°C79WRFInputPower,CW,50Ω,T=25°C+40dBmMountingTemperature(30Seconds)320°CStorageTemperature40to+150°CNotes:1.
.
Operationofthisdeviceoutsidetheparameterrangesgivenabovemaycausepermanentdamage.
RecommendedOperatingConditions1ParameterMinTypMaxUnitsOperatingTemperatureRange40+25+85°CDrainVoltageRange,VD+12+50+55VDrainCurrent,ID3–4.
0–ADrainBiasCurrent,IDQ–260–mAGateVoltage,VG4–2.
8–VPowerDissipation,CW(PD)2––71WPowerDissipation,Pulsed(PD)2,3––127WNotes:1.
Electricalperformanceismeasuredunderconditionsnotedintheelectricalspecificationstable.
Specificationsarenotguaranteedoverallrecommendedoperatingconditions.
2.
Packageat85°C3.
DraincurrentatP3dB,PulseWidth=128uS,DutyCycle=10%4.
TobeadjustedfordesiredIDQElectricalCharacterizationSymbolParameterMinTypicalMaxUnitsGateLeakageVD=+10V,VG=3.
8V23.
1––mAQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice3of23www.
qorvo.
comPulsedCharacterization–Load-PullPerformance–EfficiencyTuned1ParametersTypicalValuesUnitFrequency123GHzLinearGain,GLIN23.
518.
615.
2dBOutputPowerat3dBcompressionpoint,P3dB48.
250.
251.
0dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB76.
274.
669.
7%Gainat3dBcompressionpoint,G3dB20.
515.
612.
2dBNotes:1.
Testconditionsunlessotherwisenoted:VD=+50V,IDQ=260mA,Temp=+25°CPulsedCharacterization–Load-PullPerformance–PowerTuned1ParametersTypicalValuesUnitFrequency,F123GHzLinearGain,GLIN22.
517.
514.
1dBOutputPowerat3dBcompressionpoint,P3dB52.
052.
151.
9dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB63.
462.
159.
2%Gainat3dBcompressionpoint19.
514.
411.
1dBNotes:1.
Testconditionsunlessotherwisenoted:VD=+50V,ID=260mA,Temp=+25°CRFCharacterization–EVB1Performanceat1.
09GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–20–dBOutputPowerat3dBcompressionpoint,P3dB–51.
2–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–73.
5–%Gainat3dBcompressionpoint,G3dB–17–dBNotes:1.
VD=+50V,IDQ=260mA,Temp=+25°C,PulseWidth=128uS,DutyCycle=10%RFCharacterization–MismatchRuggednessat1.
09GHzSymbolParameterdBCompressionTypicalVSWRImpedanceMismatchRuggedness310:1Testconditionsunlessotherwisenoted:TA=25°C,VD=50V,IDQ=260mADrivinginputpowerisdeterminedatpulsed3dBcompressionundermatchedconditionatEVBoutputconnector.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice4of23www.
qorvo.
comMaximumGateCurrentQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice5of23www.
qorvo.
com1RefertothefollowingdocumentGaNDeviceChannelTemperature,ThermalResistance,andReliabilityEstimatesThermalandReliabilityInformation–PulsedParameterConditionsValuesUnitsThermalResistance,IR1(θJC)85°CCase42WPdiss,128uSPW,10%DC0.
74°C/WPeakIRSurfaceTemperature1(TCH)116°CThermalResistance,IR1(θJC)85°CCase63WPdiss,128uSPW,10%DC0.
76°C/WPeakIRSurfaceTemperature1(TCH)133°CThermalResistance,IR1(θJC)85°CCase84WPdiss,128uSPW,10%DC0.
77°C/WPeakIRSurfaceTemperature1(TCH)150°CThermalResistance,IR1(θJC)85°CCase105WPdiss,128uSPW,10%DC0.
80°C/WPeakIRSurfaceTemperature1(TCH)169°CThermalResistance,IR1(θJC)85°CCase126WPdiss,128uSPW,10%DC0.
82°C/WPeakIRSurfaceTemperature1(TCH)188°CQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice6of23www.
qorvo.
com1RefertothefollowingdocumentGaNDeviceChannelTemperature,ThermalResistance,andReliabilityEstimatesThermalandReliabilityInformation–CWParameterConditionsValuesUnitsThermalResistance,IR1(θJC)85°CCase21WPdiss,CW1.
24°C/WPeakIRSurfaceTemperature1(TCH)111°CThermalResistance,IR1(θJC)85°CCase42WPdiss,CW1.
33°C/WPeakIRSurfaceTemperature1(TCH)141°CThermalResistance,IR1(θJC)85°CCase63WPdiss,CW1.
41°C/WPeakIRSurfaceTemperature1(TCH)174°CThermalResistance,IR1(θJC)85°CCase84WPdiss,CW1.
51°C/WPeakIRSurfaceTemperature1(TCH)212°CThermalResistance,IR1(θJC)85°CCase105WPdiss,CW1.
60°C/WPeakIRSurfaceTemperature1(TCH)253°CQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice7of23www.
qorvo.
comLoad-PullSmithCharts1,2Notes:1.
50V,260mA,Pulsedsignalwith128uSpulsewidthand10%dutycycle.
2.
Seepage17forload-pullandsource-pullreferenceplanes.
11.
7-Ωload-pullTRLfixturesarebuiltwith32-milRO4360G2material.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice8of23www.
qorvo.
comLoad-PullSmithCharts1,2,3Notes:1.
50V,260mA,Pulsedsignalwith128uSpulsewidthand10%dutycycle.
2.
Seepage15forload-pullandsource-pullreferenceplanes.
11.
7-Ωload-pullTRLfixturesarebuiltwith32-milRO4360G2material.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice9of23www.
qorvo.
comLoad-PullSmithCharts1,2,3Notes:1.
50V,260mA,Pulsedsignalwith128uSpulsewidthand10%dutycycle.
2.
Seepage15forload-pullandsource-pullreferenceplanes.
11.
7-Ωload-pullTRLfixturesarebuiltwith32-milRO4360G2material.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice10of23www.
qorvo.
comTypicalPerformance–Load-PullDrive-upNotes:1.
Pulsedsignalwith128uSpulsewidthand10%dutycycle,Vd=50V,IDQ=260mA.
2.
Seepage15forload-pullandsource-pullreferenceplaneswheretheperformancewasmeasured.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice11of23www.
qorvo.
comPowerDriveupPerformanceOverTemperaturesOf0.
96–1.
215GHzEVB1Notes:1.
Pulsedsignalwith128uSpulsewidthand10%dutycycle,Vd=50V,IDQ=260mA.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice12of23www.
qorvo.
comTypicalPerformance–0.
96–1.
215GHzEVBat25°C1Notes:1.
Pulsedsignalwith128uSpulsewidthand10%dutycycle,Vd=50V,IDQ=260mAQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice13of23www.
qorvo.
comTypical2-TonePerformance–0.
96–1.
215GHzEVBat25°C1Notes:1.
CenterFrequency=1.
095GHz,ToneSpacing=10MHz,IDQ=260mAand520mA.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice14of23www.
qorvo.
comTypicalPerformance–1.
1–1.
5GHzEVBat25°C1Notes:1.
Pulsedsignalwith128uSpulsewidthand10%dutycycle,Vd=50V,IDQ=260mA.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice15of23www.
qorvo.
comPinLayout1Notes:1.
TheQPD1008willbemarkedwiththe"QPD1008"designatorandalotcodemarkedbelowthepartdesignator.
The"YY"representsthelasttwodigitsofthecalendaryearthepartwasmanufactured,the"WW"istheworkweekoftheassemblylotstart,the"MXXX"istheproductionlotnumber,andthe"ZZZ"isanauto-generatedserialnumber.
PinDescriptionPinSymbolDescription1VG/RFINGatevoltage/RFInput2VD/RFOUTDrainvoltage/RFOutput3FlangeSourcetobeconnectedtogroundQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice16of23www.
qorvo.
comMechanicalDrawing1-7Note:1.
Alldimensionsareininches.
Anglesareindegrees.
2.
Dimensiontoleranceis±0.
005inches,unlessotherwisenoted.
3.
Material:PackageBase:Ceramic/MetalPackageLid:Ceramic4.
Packageexposedmetallizationisgoldplated.
5.
Partisepoxysealed.
6.
PartmeetsindustryNI360footprint.
7.
Bodydimensionsdonotincludeepoxyrunoutwhichcanbeupto0.
020inchesperside.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice17of23www.
qorvo.
com0.
96–1.
215GHzApplicationCircuit-SchematicBias-upProcedureBias-downProcedure1.
SetVGto-4V.
1.
TurnoffRFsignal.
2.
SetIDcurrentlimitto300mA.
2.
TurnoffVD3.
Apply50VVD.
3.
Wait2secondstoallowdraincapacitortodischarge4.
SlowlyadjustVGuntilIDissetto260mA.
4.
TurnoffVG5.
SetIDcurrentlimitto0.
6A(Pulsedoperation)6.
ApplyRF.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice18of23www.
qorvo.
com0.
96–1.
215GHzApplicationCircuit-LayoutBoardmaterialisRO4360G20.
032"thicknesswith1ozcoppercladding.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice19of23www.
qorvo.
com0.
96–1.
215GHzApplicationCircuit-BillOfmaterialRefDesValueDescriptionManufacturerPartNumberC8,101nFX7R100V5%0603CapacitorAVX06031C102JAT2AC17-18100nFX7R100V5%0805CapacitorAVX08051C104JAT2AC28-292pFRFNPO250VDC±0.
1pFCapacitorATCATC800A2R0BT250XC23–242.
4pFRFNPO250VDC±0.
1pFCapacitorATCATC800A2R4BT250XC203.
0pFRFNPO250VDC±0.
1pFCapacitorATCATC800A3R0BT250XC214.
7pFRFNPO250VDC±0.
1pFCapacitorATCATC800A4R7BT250XC25–266.
2pFRFNPO250VDC±0.
1pFCapacitorATCATC800A6R2BT250XC2210pFRFNPO250VDC1%CapacitorATCATC800A100FT250XC19,27,30–3156pFRFNPO250VDC1%CapacitorATCATC800A560FT250XC32-33100pFRFNPO250VDC1%CapacitorATCATC800A101FT250XC133uFRFNPO250VDC1%CapacitorPANASONIC63SXV33MC210uFRFNPO250VDC1%CapacitorAVXTPSC106KR0500J1-2SMAPanelMount4-holeJackGIGALANEPSF-S00-000L15.
6nH08055%InductorCOILCRAFT0805CS-050XJEL24.
1nH10085%InductorCOILCRAFT1008HQ-4NIXJLBR4,61Ohm0603ThickFilmResistorANYR53.
3Ohm0603ThickFilmResistorANYR14–155.
1Ohm0603ThickFilmResistorANYR164.
0Ohm0805CSHighPowerThickFilmResistorND3-0805CS4R00JR333Ohm0603ThickFilmResistorANYR203.
9Ohm0805ThickFilmResistorANYR17–187Ohm0805CSHighPowerThickFilmResistorIMSND3-0805CS7R00JR19510Ohm1206ThickFilmResistorANYQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice20of23www.
qorvo.
com1.
1–1.
5GHzApplicationCircuit-SchematicBias-upProcedureBias-downProcedure2.
SetVGto-4V.
3.
TurnoffRFsignal.
4.
SetIDcurrentlimitto300mA.
4.
TurnoffVD5.
Apply50VVD.
5.
Wait2secondstoallowdraincapacitortodischarge6.
SlowlyadjustVGuntilIDissetto260mA.
7.
TurnoffVG8.
SetIDcurrentlimitto0.
6A(Pulsedoperation)9.
ApplyRF.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice21of23www.
qorvo.
com1.
1–1.
5GHzApplicationCircuit-LayoutBoardmaterialisRO4360G20.
032"thicknesswith1ozcoppercladding.
EVBdimensionis3"x4".
1.
1–1.
5GHzApplicationCircuit-BillOfmaterialRefDesValueQuantityPartNumberManufacturerC1100pF10603G101J201SCapaxC23.
3pF1600S3R3AT250XTATCC123.
9pF1600S3R9AT250XTATCC11,C1522pF2600S220FT250XTATCC3,C70.
1uF2GRM188R72A104KA35DMurataC10,C141uF2C2012X7S2A105M125ABTDKC13100uF,63V1EEETG1J101UPPanasonicR1,R750Ohm2CRCW060350R0FKEA-NDVishayR210Ohm1CRCW060310R0JNEAVishayL110nH10603CS-10NXJEWCoilcraftL212.
5nH1A04TJLCCoilcraftU12dBAtten.
1RFP-250250-4AA2-1AnarenQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice22of23www.
qorvo.
comRecommendedSolderTemperatureProfileQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
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qorvo.
comHandlingPrecautionsParameterRatingStandardCaution!
ESD-SensitiveDeviceESD–HumanBodyModel(HBM)Class1AANSI/ESD/JEDECJS-001ESD–ChargedDeviceModel(CDM)ClassC3ANSI/ESD/JEDECJS-002MSL–MoistureSensitivityLevelMSL3IPC/JEDECJ-STD-020SolderabilityCompatiblewithbothlead-free(260°Cmax.
reflowtemp.
)andtin/lead(245°Cmax.
reflowtemp.
)solderingprocesses.
Solderprofilesavailableuponrequest.
Contactplating:NiAu.
Authicknessis60microinchesminimum.
RoHSComplianceThispartiscompliantwith2011/65/EURoHSdirective(RestrictionsontheUseofCertainHazardousSubstancesinElectricalandElectronicEquipment)asamendedbyDirective2015/863/EU.
Thisproductalsohasthefollowingattributes:LeadFreeHalogenFree(Chlorine,Bromine)AntimonyFreeTBBP-A(C15H12Br402)FreePFOSFreeSVHCFreeContactInformationForthelatestspecifications,additionalproductinformation,worldwidesalesanddistributionlocations:Web:www.
qorvo.
comTel:1-844-890-8163Email:customer.
support@qorvo.
comImportantNoticeTheinformationcontainedhereinisbelievedtobereliable;however,Qorvomakesnowarrantiesregardingtheinformationcontainedhereinandassumesnoresponsibilityorliabilitywhatsoeverfortheuseoftheinformationcontainedherein.
Allinformationcontainedhereinissubjecttochangewithoutnotice.
CustomersshouldobtainandverifythelatestrelevantinformationbeforeplacingordersforQorvoproducts.
Theinformationcontainedhereinoranyuseofsuchinformationdoesnotgrant,explicitlyorimplicitly,toanypartyanypatentrights,licenses,oranyotherintellectualpropertyrights,whetherwithregardtosuchinformationitselforanythingdescribedbysuchinformation.
THISINFORMATIONDOESNOTCONSTITUTEAWARRANTYWITHRESPECTTOTHEPRODUCTSDESCRIBEDHEREIN,ANDQORVOHEREBYDISCLAIMSANYANDALLWARRANTIESWITHRESPECTTOSUCHPRODUCTSWHETHEREXPRESSORIMPLIEDBYLAW,COURSEOFDEALING,COURSEOFPERFORMANCE,USAGEOFTRADEOROTHERWISE,INCLUDINGTHEIMPLIEDWARRANTIESOFMERCHANTABILITYANDFITNESSFORAPARTICULARPURPOSE.
Withoutlimitingthegeneralityoftheforegoing,Qorvoproductsarenotwarrantedorauthorizedforuseascriticalcomponentsinmedical,life-saving,orlife-sustainingapplications,orotherapplicationswhereafailurewouldreasonablybeexpectedtocauseseverepersonalinjuryordeath.
Copyright2020Qorvo,Inc.
|QorvoisaregisteredtrademarkofQorvo,Inc.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice1of23www.
qorvo.
comProductFeaturesFrequency:DCto3.
2GHzOutputPower(P3dB)1:162WLinearGain1:17.
5dBTypicalDEFF3dB1:74%OperatingVoltage:50VLowthermalresistancepackageCWandPulsecapableNote:1@2GHzGeneralDescriptionTheQPD1008isa125W(P3dB)widebandunmatcheddiscreteGaNonSiCHEMTwhichoperatesfromDCto3.
2GHzwitha50Vsupplyrail.
Thedeviceisinanindustrystandardaircavitypackageandisideallysuitedformilitaryandcivilianradar,landmobileandmilitaryradiocommunications,avionics,andtestinstrumentation.
Thedevicecansupportpulsed,CW,andlinearoperation.
Lead-freeandROHScompliantEvaluationboardsareavailableuponrequest.
FunctionalBlockDiagramApplicationsMilitaryradarCivilianradarLandmobileandmilitaryradiocommunicationsTestinstrumenationWidebandornarrowbandamplifiersJammersAvionicsPartNo.
DescriptionQPD1008DC–3.
2GHzRFTransistorQPD1008PCB4B010.
96–1.
215GHzEVBQPD1008EVB21.
1–1.
5GHzEVBQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice2of23www.
qorvo.
comAbsoluteMaximumRatings1ParameterRatingUnitsBreakdownVoltage,BVD+145VGateVoltageRange,VG-7to+2VDrainCurrent,IDMAX20.
4AGateCurrentRange,IGSeepage4.
mAPowerDissipation,CW,PDISS,BaseTemperature=85°C79WRFInputPower,CW,50Ω,T=25°C+40dBmMountingTemperature(30Seconds)320°CStorageTemperature40to+150°CNotes:1.
.
Operationofthisdeviceoutsidetheparameterrangesgivenabovemaycausepermanentdamage.
RecommendedOperatingConditions1ParameterMinTypMaxUnitsOperatingTemperatureRange40+25+85°CDrainVoltageRange,VD+12+50+55VDrainCurrent,ID3–4.
0–ADrainBiasCurrent,IDQ–260–mAGateVoltage,VG4–2.
8–VPowerDissipation,CW(PD)2––71WPowerDissipation,Pulsed(PD)2,3––127WNotes:1.
Electricalperformanceismeasuredunderconditionsnotedintheelectricalspecificationstable.
Specificationsarenotguaranteedoverallrecommendedoperatingconditions.
2.
Packageat85°C3.
DraincurrentatP3dB,PulseWidth=128uS,DutyCycle=10%4.
TobeadjustedfordesiredIDQElectricalCharacterizationSymbolParameterMinTypicalMaxUnitsGateLeakageVD=+10V,VG=3.
8V23.
1––mAQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice3of23www.
qorvo.
comPulsedCharacterization–Load-PullPerformance–EfficiencyTuned1ParametersTypicalValuesUnitFrequency123GHzLinearGain,GLIN23.
518.
615.
2dBOutputPowerat3dBcompressionpoint,P3dB48.
250.
251.
0dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB76.
274.
669.
7%Gainat3dBcompressionpoint,G3dB20.
515.
612.
2dBNotes:1.
Testconditionsunlessotherwisenoted:VD=+50V,IDQ=260mA,Temp=+25°CPulsedCharacterization–Load-PullPerformance–PowerTuned1ParametersTypicalValuesUnitFrequency,F123GHzLinearGain,GLIN22.
517.
514.
1dBOutputPowerat3dBcompressionpoint,P3dB52.
052.
151.
9dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB63.
462.
159.
2%Gainat3dBcompressionpoint19.
514.
411.
1dBNotes:1.
Testconditionsunlessotherwisenoted:VD=+50V,ID=260mA,Temp=+25°CRFCharacterization–EVB1Performanceat1.
09GHz1ParameterMinTypMaxUnitsLinearGain,GLIN–20–dBOutputPowerat3dBcompressionpoint,P3dB–51.
2–dBmDrainEfficiencyat3dBcompressionpoint,DEFF3dB–73.
5–%Gainat3dBcompressionpoint,G3dB–17–dBNotes:1.
VD=+50V,IDQ=260mA,Temp=+25°C,PulseWidth=128uS,DutyCycle=10%RFCharacterization–MismatchRuggednessat1.
09GHzSymbolParameterdBCompressionTypicalVSWRImpedanceMismatchRuggedness310:1Testconditionsunlessotherwisenoted:TA=25°C,VD=50V,IDQ=260mADrivinginputpowerisdeterminedatpulsed3dBcompressionundermatchedconditionatEVBoutputconnector.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice4of23www.
qorvo.
comMaximumGateCurrentQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice5of23www.
qorvo.
com1RefertothefollowingdocumentGaNDeviceChannelTemperature,ThermalResistance,andReliabilityEstimatesThermalandReliabilityInformation–PulsedParameterConditionsValuesUnitsThermalResistance,IR1(θJC)85°CCase42WPdiss,128uSPW,10%DC0.
74°C/WPeakIRSurfaceTemperature1(TCH)116°CThermalResistance,IR1(θJC)85°CCase63WPdiss,128uSPW,10%DC0.
76°C/WPeakIRSurfaceTemperature1(TCH)133°CThermalResistance,IR1(θJC)85°CCase84WPdiss,128uSPW,10%DC0.
77°C/WPeakIRSurfaceTemperature1(TCH)150°CThermalResistance,IR1(θJC)85°CCase105WPdiss,128uSPW,10%DC0.
80°C/WPeakIRSurfaceTemperature1(TCH)169°CThermalResistance,IR1(θJC)85°CCase126WPdiss,128uSPW,10%DC0.
82°C/WPeakIRSurfaceTemperature1(TCH)188°CQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice6of23www.
qorvo.
com1RefertothefollowingdocumentGaNDeviceChannelTemperature,ThermalResistance,andReliabilityEstimatesThermalandReliabilityInformation–CWParameterConditionsValuesUnitsThermalResistance,IR1(θJC)85°CCase21WPdiss,CW1.
24°C/WPeakIRSurfaceTemperature1(TCH)111°CThermalResistance,IR1(θJC)85°CCase42WPdiss,CW1.
33°C/WPeakIRSurfaceTemperature1(TCH)141°CThermalResistance,IR1(θJC)85°CCase63WPdiss,CW1.
41°C/WPeakIRSurfaceTemperature1(TCH)174°CThermalResistance,IR1(θJC)85°CCase84WPdiss,CW1.
51°C/WPeakIRSurfaceTemperature1(TCH)212°CThermalResistance,IR1(θJC)85°CCase105WPdiss,CW1.
60°C/WPeakIRSurfaceTemperature1(TCH)253°CQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice7of23www.
qorvo.
comLoad-PullSmithCharts1,2Notes:1.
50V,260mA,Pulsedsignalwith128uSpulsewidthand10%dutycycle.
2.
Seepage17forload-pullandsource-pullreferenceplanes.
11.
7-Ωload-pullTRLfixturesarebuiltwith32-milRO4360G2material.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice8of23www.
qorvo.
comLoad-PullSmithCharts1,2,3Notes:1.
50V,260mA,Pulsedsignalwith128uSpulsewidthand10%dutycycle.
2.
Seepage15forload-pullandsource-pullreferenceplanes.
11.
7-Ωload-pullTRLfixturesarebuiltwith32-milRO4360G2material.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice9of23www.
qorvo.
comLoad-PullSmithCharts1,2,3Notes:1.
50V,260mA,Pulsedsignalwith128uSpulsewidthand10%dutycycle.
2.
Seepage15forload-pullandsource-pullreferenceplanes.
11.
7-Ωload-pullTRLfixturesarebuiltwith32-milRO4360G2material.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice10of23www.
qorvo.
comTypicalPerformance–Load-PullDrive-upNotes:1.
Pulsedsignalwith128uSpulsewidthand10%dutycycle,Vd=50V,IDQ=260mA.
2.
Seepage15forload-pullandsource-pullreferenceplaneswheretheperformancewasmeasured.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice11of23www.
qorvo.
comPowerDriveupPerformanceOverTemperaturesOf0.
96–1.
215GHzEVB1Notes:1.
Pulsedsignalwith128uSpulsewidthand10%dutycycle,Vd=50V,IDQ=260mA.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice12of23www.
qorvo.
comTypicalPerformance–0.
96–1.
215GHzEVBat25°C1Notes:1.
Pulsedsignalwith128uSpulsewidthand10%dutycycle,Vd=50V,IDQ=260mAQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice13of23www.
qorvo.
comTypical2-TonePerformance–0.
96–1.
215GHzEVBat25°C1Notes:1.
CenterFrequency=1.
095GHz,ToneSpacing=10MHz,IDQ=260mAand520mA.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice14of23www.
qorvo.
comTypicalPerformance–1.
1–1.
5GHzEVBat25°C1Notes:1.
Pulsedsignalwith128uSpulsewidthand10%dutycycle,Vd=50V,IDQ=260mA.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice15of23www.
qorvo.
comPinLayout1Notes:1.
TheQPD1008willbemarkedwiththe"QPD1008"designatorandalotcodemarkedbelowthepartdesignator.
The"YY"representsthelasttwodigitsofthecalendaryearthepartwasmanufactured,the"WW"istheworkweekoftheassemblylotstart,the"MXXX"istheproductionlotnumber,andthe"ZZZ"isanauto-generatedserialnumber.
PinDescriptionPinSymbolDescription1VG/RFINGatevoltage/RFInput2VD/RFOUTDrainvoltage/RFOutput3FlangeSourcetobeconnectedtogroundQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice16of23www.
qorvo.
comMechanicalDrawing1-7Note:1.
Alldimensionsareininches.
Anglesareindegrees.
2.
Dimensiontoleranceis±0.
005inches,unlessotherwisenoted.
3.
Material:PackageBase:Ceramic/MetalPackageLid:Ceramic4.
Packageexposedmetallizationisgoldplated.
5.
Partisepoxysealed.
6.
PartmeetsindustryNI360footprint.
7.
Bodydimensionsdonotincludeepoxyrunoutwhichcanbeupto0.
020inchesperside.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice17of23www.
qorvo.
com0.
96–1.
215GHzApplicationCircuit-SchematicBias-upProcedureBias-downProcedure1.
SetVGto-4V.
1.
TurnoffRFsignal.
2.
SetIDcurrentlimitto300mA.
2.
TurnoffVD3.
Apply50VVD.
3.
Wait2secondstoallowdraincapacitortodischarge4.
SlowlyadjustVGuntilIDissetto260mA.
4.
TurnoffVG5.
SetIDcurrentlimitto0.
6A(Pulsedoperation)6.
ApplyRF.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice18of23www.
qorvo.
com0.
96–1.
215GHzApplicationCircuit-LayoutBoardmaterialisRO4360G20.
032"thicknesswith1ozcoppercladding.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice19of23www.
qorvo.
com0.
96–1.
215GHzApplicationCircuit-BillOfmaterialRefDesValueDescriptionManufacturerPartNumberC8,101nFX7R100V5%0603CapacitorAVX06031C102JAT2AC17-18100nFX7R100V5%0805CapacitorAVX08051C104JAT2AC28-292pFRFNPO250VDC±0.
1pFCapacitorATCATC800A2R0BT250XC23–242.
4pFRFNPO250VDC±0.
1pFCapacitorATCATC800A2R4BT250XC203.
0pFRFNPO250VDC±0.
1pFCapacitorATCATC800A3R0BT250XC214.
7pFRFNPO250VDC±0.
1pFCapacitorATCATC800A4R7BT250XC25–266.
2pFRFNPO250VDC±0.
1pFCapacitorATCATC800A6R2BT250XC2210pFRFNPO250VDC1%CapacitorATCATC800A100FT250XC19,27,30–3156pFRFNPO250VDC1%CapacitorATCATC800A560FT250XC32-33100pFRFNPO250VDC1%CapacitorATCATC800A101FT250XC133uFRFNPO250VDC1%CapacitorPANASONIC63SXV33MC210uFRFNPO250VDC1%CapacitorAVXTPSC106KR0500J1-2SMAPanelMount4-holeJackGIGALANEPSF-S00-000L15.
6nH08055%InductorCOILCRAFT0805CS-050XJEL24.
1nH10085%InductorCOILCRAFT1008HQ-4NIXJLBR4,61Ohm0603ThickFilmResistorANYR53.
3Ohm0603ThickFilmResistorANYR14–155.
1Ohm0603ThickFilmResistorANYR164.
0Ohm0805CSHighPowerThickFilmResistorND3-0805CS4R00JR333Ohm0603ThickFilmResistorANYR203.
9Ohm0805ThickFilmResistorANYR17–187Ohm0805CSHighPowerThickFilmResistorIMSND3-0805CS7R00JR19510Ohm1206ThickFilmResistorANYQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice20of23www.
qorvo.
com1.
1–1.
5GHzApplicationCircuit-SchematicBias-upProcedureBias-downProcedure2.
SetVGto-4V.
3.
TurnoffRFsignal.
4.
SetIDcurrentlimitto300mA.
4.
TurnoffVD5.
Apply50VVD.
5.
Wait2secondstoallowdraincapacitortodischarge6.
SlowlyadjustVGuntilIDissetto260mA.
7.
TurnoffVG8.
SetIDcurrentlimitto0.
6A(Pulsedoperation)9.
ApplyRF.
QPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice21of23www.
qorvo.
com1.
1–1.
5GHzApplicationCircuit-LayoutBoardmaterialisRO4360G20.
032"thicknesswith1ozcoppercladding.
EVBdimensionis3"x4".
1.
1–1.
5GHzApplicationCircuit-BillOfmaterialRefDesValueQuantityPartNumberManufacturerC1100pF10603G101J201SCapaxC23.
3pF1600S3R3AT250XTATCC123.
9pF1600S3R9AT250XTATCC11,C1522pF2600S220FT250XTATCC3,C70.
1uF2GRM188R72A104KA35DMurataC10,C141uF2C2012X7S2A105M125ABTDKC13100uF,63V1EEETG1J101UPPanasonicR1,R750Ohm2CRCW060350R0FKEA-NDVishayR210Ohm1CRCW060310R0JNEAVishayL110nH10603CS-10NXJEWCoilcraftL212.
5nH1A04TJLCCoilcraftU12dBAtten.
1RFP-250250-4AA2-1AnarenQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice22of23www.
qorvo.
comRecommendedSolderTemperatureProfileQPD1008125W,50V,DC–3.
2GHz,GaNRFTransistorDataSheetRev.
E,May2020|Subjecttochangewithoutnotice23of23www.
qorvo.
comHandlingPrecautionsParameterRatingStandardCaution!
ESD-SensitiveDeviceESD–HumanBodyModel(HBM)Class1AANSI/ESD/JEDECJS-001ESD–ChargedDeviceModel(CDM)ClassC3ANSI/ESD/JEDECJS-002MSL–MoistureSensitivityLevelMSL3IPC/JEDECJ-STD-020SolderabilityCompatiblewithbothlead-free(260°Cmax.
reflowtemp.
)andtin/lead(245°Cmax.
reflowtemp.
)solderingprocesses.
Solderprofilesavailableuponrequest.
Contactplating:NiAu.
Authicknessis60microinchesminimum.
RoHSComplianceThispartiscompliantwith2011/65/EURoHSdirective(RestrictionsontheUseofCertainHazardousSubstancesinElectricalandElectronicEquipment)asamendedbyDirective2015/863/EU.
Thisproductalsohasthefollowingattributes:LeadFreeHalogenFree(Chlorine,Bromine)AntimonyFreeTBBP-A(C15H12Br402)FreePFOSFreeSVHCFreeContactInformationForthelatestspecifications,additionalproductinformation,worldwidesalesanddistributionlocations:Web:www.
qorvo.
comTel:1-844-890-8163Email:customer.
support@qorvo.
comImportantNoticeTheinformationcontainedhereinisbelievedtobereliable;however,Qorvomakesnowarrantiesregardingtheinformationcontainedhereinandassumesnoresponsibilityorliabilitywhatsoeverfortheuseoftheinformationcontainedherein.
Allinformationcontainedhereinissubjecttochangewithoutnotice.
CustomersshouldobtainandverifythelatestrelevantinformationbeforeplacingordersforQorvoproducts.
Theinformationcontainedhereinoranyuseofsuchinformationdoesnotgrant,explicitlyorimplicitly,toanypartyanypatentrights,licenses,oranyotherintellectualpropertyrights,whetherwithregardtosuchinformationitselforanythingdescribedbysuchinformation.
THISINFORMATIONDOESNOTCONSTITUTEAWARRANTYWITHRESPECTTOTHEPRODUCTSDESCRIBEDHEREIN,ANDQORVOHEREBYDISCLAIMSANYANDALLWARRANTIESWITHRESPECTTOSUCHPRODUCTSWHETHEREXPRESSORIMPLIEDBYLAW,COURSEOFDEALING,COURSEOFPERFORMANCE,USAGEOFTRADEOROTHERWISE,INCLUDINGTHEIMPLIEDWARRANTIESOFMERCHANTABILITYANDFITNESSFORAPARTICULARPURPOSE.
Withoutlimitingthegeneralityoftheforegoing,Qorvoproductsarenotwarrantedorauthorizedforuseascriticalcomponentsinmedical,life-saving,orlife-sustainingapplications,orotherapplicationswhereafailurewouldreasonablybeexpectedtocauseseverepersonalinjuryordeath.
Copyright2020Qorvo,Inc.
|QorvoisaregisteredtrademarkofQorvo,Inc.
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