SemiconductorComponentsIndustries,LLC,2017November,2017Rev.
11PublicationOrderNumber:NV24C02WF/DNV24C02WF,NV24C04WF,NV24C08WF,NV24C16WF2kb,4kb,8kband16kbI2CAutomotiveSerialEEPROMinWettableFlankUDFN-8PackageDescriptionTheNV24C02/04/08/16are2kb,4kb,8kband16kbrespectivelyCMOSSerialEEPROMdevicesorganizedinternallyas16/32/64and128pagesrespectivelyof16byteseach.
AlldevicessupporttheStandard(100kHz)andFast(400kHz)I2Cprotocol.
Dataiswrittenbyprovidingastartingaddress,thenloading1to16contiguousbytesintoaPageWriteBuffer,andthenwritingalldatatononvolatilememoryinoneinternalwritecycle.
Dataisreadbyprovidingastartingaddressandthenshiftingoutdataseriallywhileautomaticallyincrementingtheinternaladdresscount.
ExternaladdresspinsmakeitpossibletoaddressuptoeightNV24C02,fourNV24C04,twoNV24C08andoneNV24C16deviceonthesamebus.
FeaturesAutomotiveGrade1TemperatureRange(40°Cto+125°C)SupportsStandard,FastandFastPlusI2CProtocol2.
5Vto5.
5VSupplyVoltageRange16BytePageWriteBufferFastWriteTime(4msmax)HardwareWriteProtectionforEntireMemorySchmittTriggersandNoiseSuppressionFiltersonI2CBusInputs(SCLandSDA)LowpowerCMOSTechnologyMorethan1,000,000Program/EraseCycles100YearDataRetentionUDFN8(2x3mm)WettableFlankPackage(40°Cto+125°C)TheseDevicesarePbFree,HalogenFree/BFRFreeandareRoHSCompliantSDASCLWPVCCVSSNV24C__16/08/04/02NC///NCNCNCNCNCA0A1A1A2A2A2//////PINCONFIGURATIONUDFN8(TopView)1www.
onsemi.
comUDFN8MUW3SUFFIXCASE517DHMARKINGDIAGRAMSeedetailedordering,markingandshippinginformationonpage9ofthisdatasheet.
ORDERINGINFORMATION1XXXXX=SpecificDeviceCodeA=AssemblyLocationWL=WaferLotY=YearW=WorkWeekG=PbFreePackageXXXXXAWLYWG1NV24C02WF,NV24C04WF,NV24C08WF,NV24C16WFwww.
onsemi.
com2SCLWPNV24CxxFigure1.
FunctionalSymbolVSSSDAVCCA2,A1,A0Table1.
PINFUNCTIONPinNameFunctionA0,A1,A2DeviceAddressInputSDASerialDataInput/OutputSCLSerialClockInputWPWriteProtectInputVCCPowerSupplyVSSGroundNCNoConnectTable2.
ABSOLUTEMAXIMUMRATINGSParametersRatingsUnitStorageTemperature65to+150°CVoltageonanypinwithrespecttoGround(Note1)0.
5to+6.
5VStressesexceedingthoselistedintheMaximumRatingstablemaydamagethedevice.
Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbeassumed,damagemayoccurandreliabilitymaybeaffected.
1.
Duringinputtransitions,voltageundershootonanypinshouldnotexceed1Vformorethan20ns.
VoltageovershootonpinsA0,A1,A2andWPshouldnotexceedVCC+1Vformorethan20ns,whilevoltageontheI2Cbuspins,SCLandSDA,shouldnotexceedtheabsolutemaximumratings,irrespectiveofVCC.
Table3.
RELIABILITYCHARACTERISTICSSymbolParameterMinUnitNEND(Note2)Endurance1,000,000WriteCycles(Note3)TDR(Note2)DataRetention100Years2.
TA=25°C3.
AWriteCyclereferstowritingaByteoraPage.
Table4.
DCOPERATINGCHARACTERISTICS(VCC=2.
5Vto5.
5V,TA=40°Cto+125°C,unlessotherwisespecied.
)SymbolParameterTestConditionsMinMaxUnitICCRReadCurrentRead0.
3mA2mAILI/OPinLeakagePinatGNDorVCC2mAVIL1InputLowVoltage0.
50.
3VCCVVIH1InputHighVoltage0.
7VCCVCC+0.
5VVOL1OutputLowVoltageIOL=6.
0mA0.
4VProductparametricperformanceisindicatedintheElectricalCharacteristicsforthelistedtestconditions,unlessotherwisenoted.
ProductperformancemaynotbeindicatedbytheElectricalCharacteristicsifoperatedunderdifferentconditions.
NV24C02WF,NV24C04WF,NV24C08WF,NV24C16WFwww.
onsemi.
com3Table5.
PINIMPEDANCECHARACTERISTICS(VCC=2.
5Vto5.
5V,TA=40°Cto+125°C,unlessotherwisespecied.
)SymbolParameterConditionsMaxUnitCIN(Note4)SDAI/OPinCapacitanceVIN=0V8pFCIN(Note4)InputCapacitance(otherpins)VIN=0V6pFIWP,IA(Note5)WPInputCurrent,AddressInputCurrent(A0,A1,A2)VINVIH24.
TheseparametersaretestedinitiallyandafteradesignorprocesschangethataffectstheparameteraccordingtoappropriateAECQ100andJEDECtestmethods.
5.
Whennotdriven,theWP,A0,A1andA2pinsarepulleddowntoGNDinternally.
Forimprovednoiseimmunity,theinternalpulldownisrelativelystrong;thereforetheexternaldrivermustbeabletosupplythepulldowncurrentwhenattemptingtodrivetheinputHIGH.
Toconservepower,astheinputlevelexceedsthetrippointoftheCMOSinputbuffer(~0.
5xVCC),thestrongpulldownrevertstoaweakcurrentsource.
Table6.
ACCHARACTERISTICS(VCC=2.
5Vto5.
5V,TA=40°Cto+125°C,unlessotherwisespecied.
)(Note6)SymbolParameterStandardFastUnitMinMaxMinMaxFSCLClockFrequency100400kHztHD:STASTARTConditionHoldTime40.
6mstLOWLowPeriodofSCLClock4.
71.
3mstHIGHHighPeriodofSCLClock40.
6mstSU:STASTARTConditionSetupTime4.
70.
6mstHD:DATDataInHoldTime00mstSU:DATDataInSetupTime250100nstR(Note7)SDAandSCLRiseTime1,000300nstF(Note7)SDAandSCLFallTime300300nstSU:STOSTOPConditionSetupTime40.
6mstBUFBusFreeTimeBetweenSTOPandSTART4.
71.
3mstAASCLLowtoDataOutValid3.
50.
9mstDH(Note7)DataOutHoldTime100100nsTi(Note7)NoisePulseFilteredatSCLandSDAInputs5050nstSU:WPWPSetupTime00mstHD:WPWPHoldTime2.
52.
5mstWRWriteCycleTime44mstPU(Notes7,8)Power-uptoReadyMode0.
350.
35ms6.
Testconditionsaccordingto"A.
C.
TestConditions"table.
7.
Testedinitiallyandafteradesignorprocesschangethataffectsthisparameter.
8.
tPUisthedelaybetweenthetimeVCCisstableandthedeviceisreadytoacceptcommands.
Table7.
ACTESTCONDITIONSInputLevels0.
2xVCCto0.
8xVCCInputRiseandFallTimes≤50nsInputReferenceLevels0.
3xVCC,0.
7xVCCOutputReferenceLevels0.
3xVCC,0.
7xVCCOutputLoadCurrentSource:IOL=6mA(VCC≥2.
2V);IOL=2mA(VCC<2.
2V);CL=100pFNV24C02WF,NV24C04WF,NV24C08WF,NV24C16WFwww.
onsemi.
com4PowerOnReset(POR)EachNV24Cxx*incorporatesPowerOnReset(POR)circuitrywhichprotectstheinternallogicagainstpoweringupinthewrongstate.
ANV24CxxdevicewillpowerupintoStandbymodeafterVCCexceedsthePORtriggerlevelandwillpowerdownintoResetmodewhenVCCdropsbelowthePORtriggerlevel.
ThisbidirectionalPORfeatureprotectsthedeviceagainst'brownout'failurefollowingatemporarylossofpower.
*Forcommonfeatures,theNV24C02/04/08/16willbereferredtoasNV24Cxx.
PinDescriptionSCL:TheSerialClockinputpinacceptstheSerialClockgeneratedbytheMaster.
SDA:TheSerialDataI/OpinreceivesinputdataandtransmitsdatastoredinEEPROM.
Intransmitmode,thispinisopendrain.
Dataisacquiredonthepositiveedge,andisdeliveredonthenegativeedgeofSCL.
A0,A1andA2:TheAddressinputssetthedeviceaddresswhencascadingmultipledevices.
Whennotdriven,thesepinsarepulledLOWinternally.
WP:TheWriteProtectinputpininhibitsallwriteoperations,whenpulledHIGH.
Whennotdriven,thispinispulledLOWinternally.
FunctionalDescriptionTheNV24CxxsupportstheInterIntegratedCircuit(I2C)Busdatatransmissionprotocol,whichdefinesadevicethatsendsdatatothebusasatransmitterandadevicereceivingdataasareceiver.
DataflowiscontrolledbyaMasterdevice,whichgeneratestheserialclockandallSTARTandSTOPconditions.
TheNV24CxxactsasaSlavedevice.
MasterandSlavealternateaseithertransmitterorreceiver.
I2CBusProtocolTheI2Cbusconsistsoftwo'wires',SCLandSDA.
ThetwowiresareconnectedtotheVCCsupplyviapullupresistors.
MasterandSlavedevicesconnecttothe2wirebusviatheirrespectiveSCLandSDApins.
ThetransmittingdevicepullsdowntheSDAlineto'transmit'a'0'andreleasesitto'transmit'a'1'.
Datatransfermaybeinitiatedonlywhenthebusisnotbusy(seeACCharacteristics).
Duringdatatransfer,theSDAlinemustremainstablewhiletheSCLlineishigh.
AnSDAtransitionwhileSCLishighwillbeinterpretedasaSTARTorSTOPcondition(Figure2).
TheSTARTconditionprecedesallcommands.
ItconsistsofaHIGHtoLOWtransitiononSDAwhileSCLisHIGH.
TheSTARTactsasa'wakeup'calltoallreceivers.
AbsentaSTART,aSlavewillnotrespondtocommands.
TheSTOPconditioncompletesallcommands.
ItconsistsofaLOWtoHIGHtransitiononSDAwhileSCLisHIGH.
NOTE:TheI/OpinsofNV24CxxdonotobstructtheSCLandSDAlinesiftheVCCsupplyisswitchedoff.
Duringpowerup,theSCLandSDApins(connectedwithpullupresistorstoVCC)willfollowtheVCCmonotonicallyfromVSS(0V)tonominalVCCvalue,regardlessofpullupresistorvalue.
ThedeltabetweentheVCCandtheinstantaneousvoltagelevelsduringpowerrampingwillbedeterminedbytherelationbetweenbustimeconstant(determinedbypullupresistanceandbuscapacitance)andactualVCCramprate.
DeviceAddressingTheMasterinitiatesdatatransferbycreatingaSTARTconditiononthebus.
TheMasterthenbroadcastsan8bitserialSlaveaddress.
FornormalRead/Writeoperations,thefirst4bitsoftheSlaveaddressarefixedat1010(Ah).
Thenext3bitsareusedasprogrammableaddressbitswhencascadingmultipledevicesand/orasinternaladdressbits.
Thelastbitoftheslaveaddress,R/W,specifieswhetheraRead(1)orWrite(0)operationistobeperformed.
The3addressspaceextensionbitsareassignedasillustratedinFigure3.
A2,A1andA0mustmatchthestateoftheexternaladdresspins,anda10,a9anda8areinternaladdressbits.
AcknowledgeAfterprocessingtheSlaveaddress,theSlaverespondswithanacknowledge(ACK)bypullingdowntheSDAlineduringthe9thclockcycle(Figure4).
TheSlavewillalsoacknowledgetheaddressbyteandeverydatabytepresentedinWritemode.
InReadmodetheSlaveshiftsoutadatabyte,andthenreleasestheSDAlineduringthe9thclockcycle.
AslongastheMasteracknowledgesthedata,theSlavewillcontinuetransmitting.
TheMasterterminatesthesessionbynotacknowledgingthelastdatabyte(NoACK)andbyissuingaSTOPcondition.
BustimingisillustratedinFigure5.
NV24C02WF,NV24C04WF,NV24C08WF,NV24C16WFwww.
onsemi.
com5STARTCONDITIONSTOPCONDITIONSDASCLFigure2.
Start/StopTiming1010a10a9a8R/WNV24C161010A2a9a8R/WNV24C081010A2A1a8R/WNV24C041010A2A1A0R/WNV24C02Figure3.
SlaveAddressBits189STARTSCLFROMMASTERBUSRELEASEDELAY(TRANSMITTER)BUSRELEASEDELAY(RECEIVER)DATAOUTPUTFROMTRANSMITTERDATAOUTPUTFROMRECEIVERACKDELAY(vtAA)ACKSETUP(wtSU:DAT)Figure4.
AcknowledgeTimingFigure5.
BusTimingSCLSDAINSDAOUTtSU:STAtHD:STAtHD:DATtFtLOWtAAtHIGHtLOWtRtDHtBUFtSU:DATtSU:STONV24C02WF,NV24C04WF,NV24C08WF,NV24C16WFwww.
onsemi.
com6WRITEOPERATIONSByteWriteInByteWritemode,theMastersendstheSTARTconditionandtheSlaveaddresswiththeR/WbitsettozerototheSlave.
AftertheSlavegeneratesanacknowledge,theMastersendsthebyteaddressthatistobewrittenintotheaddresspointeroftheNV24Cxx.
AfterreceivinganotheracknowledgefromtheSlave,theMastertransmitsthedatabytetobewrittenintotheaddressedmemorylocation.
TheNV24CxxdevicewillacknowledgethedatabyteandtheMastergeneratestheSTOPcondition,atwhichtimethedevicebeginsitsinternalWritecycletononvolatilememory(Figure6).
Whilethisinternalcycleisinprogress(tWR),theSDAoutputwillbetristatedandtheNV24CxxwillnotrespondtoanyrequestfromtheMasterdevice(Figure7).
PageWriteTheNV24Cxxwritesupto16bytesofdatainasinglewritecycle,usingthePageWriteoperation(Figure8).
ThePageWriteoperationisinitiatedinthesamemannerastheByteWriteoperation,howeverinsteadofterminatingafterthedatabyteistransmitted,theMasterisallowedtosenduptofifteenadditionalbytes.
AftereachbytehasbeentransmittedtheNV24Cxxwillrespondwithanacknowledgeandinternallyincrementsthefourloworderaddressbits.
Thehighorderbitsthatdefinethepageaddressremainunchanged.
IftheMastertransmitsmorethansixteenbytespriortosendingtheSTOPcondition,theaddresscounter'wrapsaround'tothebeginningofpageandpreviouslytransmitteddatawillbeoverwritten.
OnceallsixteenbytesarereceivedandtheSTOPconditionhasbeensentbytheMaster,theinternalWritecyclebegins.
AtthispointallreceiveddataiswrittentotheNV24Cxxinasinglewritecycle.
AcknowledgePollingTheacknowledge(ACK)pollingroutinecanbeusedtotakeadvantageofthetypicalwritecycletime.
Oncethestopconditionisissuedtoindicatetheendofthehost'swriteoperation,theNV24Cxxinitiatestheinternalwritecycle.
TheACKpollingcanbeinitiatedimmediately.
Thisinvolvesissuingthestartconditionfollowedbytheslaveaddressforawriteoperation.
IftheNV24Cxxisstillbusywiththewriteoperation,NoACKwillbereturned.
IftheNV24Cxxhascompletedtheinternalwriteoperation,anACKwillbereturnedandthehostcanthenproceedwiththenextreadorwriteoperation.
HardwareWriteProtectionWiththeWPpinheldHIGH,theentirememoryisprotectedagainstWriteoperations.
IftheWPpinisleftfloatingorisgrounded,ithasnoimpactontheoperationoftheNV24Cxx.
ThestateoftheWPpinisstrobedonthelastfallingedgeofSCLimmediatelyprecedingthefirstdatabyte(Figure9).
IftheWPpinisHIGHduringthestrobeinterval,theNV24CxxwillnotacknowledgethedatabyteandtheWriterequestwillberejected.
DeliveryStateTheNV24Cxxisshippederased,i.
e.
,allbytesareFFh.
ADDRESSBYTEDATABYTESLAVEADDRESSSACKACKACKSTOPPSTARTBUSACTIVITY:MASTERSLAVEa7a0d7d0Figure6.
ByteWriteSequenceNV24C02WF,NV24C04WF,NV24C08WF,NV24C16WFwww.
onsemi.
com7tWRSTOPCONDITIONSTARTCONDITIONADDRESSACK8thBitBytenSCLSDAFigure7.
WriteCycleTimingACKACKACKSTOPSACKACKSTARTPSLAVEADDRESSn=1Pv15ADDRESSBYTEnn+1n+PBUSACTIVITY:MASTERSLAVEDATABYTEDATABYTEDATABYTEFigure8.
PageWriteSequence18918a7a0d7d0tSU:WPtHD:WPADDRESSBYTEDATABYTESCLSDAWPFigure9.
WPTimingNV24C02WF,NV24C04WF,NV24C08WF,NV24C16WFwww.
onsemi.
com8READOPERATIONSImmediateReadUponreceivingaSlaveaddresswiththeR/Wbitsetto'1',theNV24Cxxwillinterpretthisasarequestfordataresidingatthecurrentbyteaddressinmemory.
TheNV24CxxwillacknowledgetheSlaveaddress,willimmediatelyshiftoutthedataresidingatthecurrentaddress,andwillthenwaitfortheMastertorespond.
IftheMasterdoesnotacknowledgethedata(NoACK)andthenfollowsupwithaSTOPcondition(Figure10),theNV24CxxreturnstoStandbymode.
SelectiveReadSelectiveReadoperationsallowtheMasterdevicetoselectatrandomanymemorylocationforareadoperation.
TheMasterdevicefirstperformsa'dummy'writeoperationbysendingtheSTARTcondition,slaveaddressandbyteaddressofthelocationitwishestoread.
AftertheNV24Cxxacknowledgesthebyteaddress,theMasterdeviceresendstheSTARTconditionandtheslaveaddress,thistimewiththeR/Wbitsettoone.
TheNV24Cxxthenrespondswithitsacknowledgeandsendstherequesteddatabyte.
TheMasterdevicedoesnotacknowledgethedata(NoACK)butwillgenerateaSTOPcondition(Figure11).
SequentialReadIfduringaReadsession,theMasteracknowledgesthe1stdatabyte,thentheNV24CxxwillcontinuetransmittingdataresidingatsubsequentlocationsuntiltheMasterrespondswithaNoACK,followedbyaSTOP(Figure12).
IncontrasttoPageWrite,duringSequentialReadtheaddresscountwillautomaticallyincrementtoandthenwraparoundatendofmemory(ratherthanendofpage).
SCLSDA8thBitSTOPNOACKDATAOUT89SLAVEADDRESSSACKDATABYTENOACKSTOPPSTARTBUSACTIVITY:MASTERSLAVEFigure10.
ImmediateReadSequenceandTimingSLAVESACKNOACKSTOPPSTARTSACKSLAVEADDRESSACKSTARTDATABYTEADDRESSBYTEADDRESSBUSACTIVITY:MASTERSLAVEFigure11.
SelectiveReadSequenceSTOPPSLAVEADDRESSACKACKACKNOACKACKDATABYTEnDATABYTEn+1DATABYTEn+2DATABYTEn+xBUSACTIVITY:MASTERSLAVEFigure12.
SequentialReadSequenceNV24C02WF,NV24C04WF,NV24C08WF,NV24C16WFwww.
onsemi.
com9ORDERINGINFORMATIONNV24C02WFOrderingInformation(ProductinDevelopment)DeviceOrderNumberSpecificDeviceMarkingPackageTypeTemperatureRangeShippingNV24C02MUW3VTBG(Note10)TBDMUW3=UDFN8(2x3mm)WettableFlankV=AutomotiveGrade1(40°Cto+125°C)T=Tape&Reel,3,000Units/ReelNV24C04WFOrderingInformationDeviceOrderNumberSpecificDeviceMarkingPackageTypeTemperatureRangeShippingNV24C04MUW3VTBGC2WMUW3=UDFN8(2x3mm)WettableFlankV=AutomotiveGrade1(40°Cto+125°C)T=Tape&Reel,3,000Units/ReelNV24C08WFOrderingInformationDeviceOrderNumberSpecificDeviceMarkingPackageTypeTemperatureRangeShippingNV24C08MUW3VTBGC3WMUW3=UDFN8(2x3mm)WettableFlankV=AutomotiveGrade1(40°Cto+125°C)T=Tape&Reel,3,000Units/ReelNV24C16WFOrderingInformationDeviceOrderNumberSpecificDeviceMarkingPackageTypeTemperatureRangeShippingNV24C16MUW3VTBGC4WMUW3=UDFN8(2x3mm)WettableFlankV=AutomotiveGrade1(40°Cto+125°C)T=Tape&Reel,3,000Units/ReelForinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D.
9.
AllpackagesareRoHScompliant(PbFree,Halogenfree).
10.
ProductindevelopmentNV24C02WF,NV24C04WF,NV24C08WF,NV24C16WFwww.
onsemi.
com10PACKAGEDIMENSIONSUDFN82x3,0.
5PCASE517DHISSUEONOTES:1.
DIMENSIONINGANDTOLERANCINGPERASMEY14.
5M,1994.
2.
CONTROLLINGDIMENSION:MILLIMETERS.
3.
DIMENSIONbAPPLIESTOPLATEDTERMINALANDISMEASUREDBETWEEN0.
15AND0.
25MMFROMTHETERMINALTIP.
4.
COPLANARITYAPPLIESTOTHEEXPOSEDPADASWELLASTHETERMINALS.
5.
FORDEVICEOPNCONTAININGWOPTION,DETAILBALTERNATECONSTRUCTIONISNOTAPPLICABLE.
ADEBC0.
05PINONEINDICATORTOPVIEWSIDEVIEWBOTTOMVIEWLD2E2CC0.
10C0.
08A1SEATINGPLANENOTE3b8X0.
10C0.
05CABDIMMINMAXMILLIMETERSA0.
450.
55A10.
000.
05b0.
200.
30D2.
00BSCD21.
301.
50E3.
00BSCE21.
301.
50e0.
50BSCL0.
300.
50148*ForadditionalinformationonourPbFreestrategyandsolderingdetails,pleasedownloadtheONSemiconductorSolderingandMountingTechniquesReferenceManual,SOLDERRM/D.
SOLDERINGFOOTPRINT*0.
50PITCH1.
553.
401DIMENSIONS:MILLIMETERSNOTE40.
308XDETAILAA30.
13REFA3ADETAILBL1DETAILALALTERNATECONSTRUCTIONSLL10.
15eRECOMMENDED51.
56MM0.
68C0.
058XDETAILBMOLDCMPDEXPOSEDCuALTERNATECONSTRUCTIONSA1A3ONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/PatentMarking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
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Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner.
PUBLICATIONORDERINGINFORMATIONN.
AmericanTechnicalSupport:8002829855TollFreeUSA/CanadaEurope,MiddleEastandAfricaTechnicalSupport:Phone:421337902910JapanCustomerFocusCenterPhone:81358171050NV24C02WF/DLITERATUREFULFILLMENT:LiteratureDistributionCenterforONSemiconductor19521E.
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