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SemiconductorComponentsIndustries,LLC,2012June,2012Rev.
121PublicationOrderNumber:N64S830HA/DN64S830HA64kbLowPowerSerialSRAMs8kx8BitOrganizationIntroductionTheONSemiconductorserialSRAMfamilyincludesseveralintegratedmemorydevicesincludingthis64kseriallyaccessedStaticRandomAccessMemory,internallyorganizedas8kwordsby8bits.
ThedevicesaredesignedandfabricatedusingONSemiconductor'sadvancedCMOStechnologytoprovidebothhighspeedperformanceandlowpower.
Thedevicesoperatewithasinglechipselect(CS)inputanduseasimpleSerialPeripheralInterface(SPI)serialbus.
Asingledatainanddataoutlineisusedalongwithaclocktoaccessdatawithinthedevices.
TheN64S830HAdevicesincludeaHOLDpinthatallowscommunicationtothedevicetobepaused.
Whilepaused,inputtransitionswillbeignored.
Thedevicescanoperateoverawidetemperaturerangeof40°Cto+85°Candcanbeavailableinseveralstandardpackageofferings.
FeaturesPowerSupplyRange:2.
5to3.
6VVeryLowStandbyCurrent:Aslowas1mAVeryLowOperatingCurrent:Aslowas3mASimpleMemoryControl:Singlechipselect(CS)Serialinput(SI)andserialoutput(SO)FlexibleOperatingModes:WordreadandwritePagemode(32wordpage)Burstmode(fullarray)Organization:8kx8bitSelfTimedWriteCyclesBuiltinWriteProtection(CSHigh)HOLDPinforPausingCommunicationHighReliability:UnlimitedwritecyclesGreenSOICandTSSOPTheseDevicesarePbFree,HalogenFree/BFRFreeandareRoHSComplianthttp://onsemi.
comDevicePackageORDERINGINFORMATIONN64S830HAS22ISOIC8(PbFree)Shipping100Units/TubeN64S830HAT22ITSSOP8(PbFree)100Units/TubeN64S830HAS22ITSOIC8(PbFree)3000/Tape&ReelN64S830HAT22ITTSSOP8(PbFree)3000/Tape&ReelForinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationBrochure,BRD8011/D.
TSSOP8TSUFFIXCASE948ALMARKINGDIAGRAMSB125XXXXYZZXXXX=DateCodeY=AssemblyCodeZZ=LotTraceabilitySOIC8SSUFFIXCASE751BDB115XXXXYZZN64S830HAhttp://onsemi.
com2SONCVSSVCCSCKSICSHOLDVCCSCKSIHOLDSONCVSSCS11SOIC8TSSOP8Figure1.
PinConnections(TopView)Table1.
DEVICEOPTIONSPartNumberDensityPowerSupply(V)Speed(MHz)PackageTypicalStandbyCurrentRead/WriteOperatingCurrentN64S830HAS264Kb3.
020SOIC1mA3mA@1MhzN64S830HAT2TSSOPTable2.
PINNAMESPinNamePinFunctionCSChipSelectInputSCKSerialClockInputSISerialDataInputSOSerialDataOutputHOLDHoldInputNCNoConnectVCCPowerVSSGround64KbSRAMArrayDecodeLogicClockCircuitrySCKDataInReceiverSDIDataOutBufferSDOFigure2.
FunctionalBlockDiagramHOLDCSN64S830HAhttp://onsemi.
com3Table3.
ABSOLUTEMAXIMUMRATINGSItemSymbolRatingUnitVoltageonanypinrelativetoVSSVIN,OUT–0.
3toVCC+0.
3VVoltageonVCCSupplyRelativetoVSSVCC–0.
3to4.
5VPowerDissipationPD500mWStorageTemperatureTSTG–40to125°COperatingTemperatureTA40to+85°CSolderingTemperatureandTimeTSOLDER260°C,10sec°CStressesexceedingMaximumRatingsmaydamagethedevice.
MaximumRatingsarestressratingsonly.
FunctionaloperationabovetheRecommendedOperatingConditionsisnotimplied.
ExtendedexposuretostressesabovetheRecommendedOperatingConditionsmayaffectdevicereliability.
Table4.
OPERATINGCHARACTERISTICS(OverSpecifiedTemperatureRange)ItemSymbolTestConditionsMinTyp(Note1)MaxUnitSupplyVoltageVCC3VDevice2.
53.
6VInputHighVoltageVIH0.
7xVCCVCC+0.
3VInputLowVoltageVIL–0.
30.
8VOutputHighVoltageVOHIOH=0.
4mAVCC–0.
5VOutputLowVoltageVOLIOL=1mA0.
2VInputLeakageCurrentILICS=VCC,VIN=0toVCC0.
5mAOutputLeakageCurrentILOCS=VCC,VOUT=0toVCC0.
5mARead/WriteOperatingCurrentICC1F=1MHz,IOUT=03mAICC2F=10MHz,IOUT=06mAICC3F=fCLKMAX,IOUT=010mAStandbyCurrentISBCS=VCC,VIN=VSSorVCC14mA1.
TypicalvaluesaremeasuredatVcc=VccTyp.
,TA=25°Candarenot100%tested.
Table5.
CAPACITANCE(Note2)ItemSymbolTestConditionMinMaxUnitInputCapacitanceCINVIN=0V,f=1MHz,TA=25°C7pFI/OCapacitanceCI/OVIN=0V,f=1MHz,TA=25°C7pF2.
Theseparametersareverifiedindevicecharacterizationandarenot100%testedTable6.
TIMINGTESTCONDITIONSItemInputPulseLevel0.
1VCCto0.
9VCCInputRiseandFallTime5nsInputandOutputTimingReferenceLevels0.
5VCCOutputLoadCL=100pFOperatingTemperature40to+85°CN64S830HAhttp://onsemi.
com4Table7.
TIMINGItemSymbolMinMaxUnitsClockFrequencyfCLK20MHzClockRiseTimetR2msClockFallTimetF2msClockHighTimetHI25nsClockLowTimetLO25nsClockDelayTimetCLD25nsCSSetupTimetCSS25nsCSHoldTimetCSH50nsCSDisableTimetCSD25nsSCKtoCStSCS5nsDataSetupTimetSU10nsDataHoldTimetHD10nsOutputValidFromClockLowtV25nsOutputHoldTimetHO0nsOutputDisableTimetDIS20nsHOLDSetupTimetHS10nsHOLDHoldTimetHH10nsHOLDLowtoOutputHighZtHZ10nsHOLDHightoOutputValidtHV50nsN64S830HAhttp://onsemi.
com5CSMSBinSCKSOSILSBinHighZFigure3.
SerialInputTimingtHDtSUtRtCSStFtCSHtSCStCLDtCSDCSMSBoutSCKSISOLSBoutDon'tCareFigure4.
SerialOutputTimingCSn+2SCKSISOn+1nHighZnn1nn1n+2n+1nDon'tCareFigure5.
HoldTimingtVtDIStCSHtLOtHIHOLDtHStHHtHStHHtHVtSUtHZN64S830HAhttp://onsemi.
com6Table8.
CONTROLSIGNALDESCRIPTIONSSignalNameI/ODescriptionCSChipSelectIAlowlevelselectsthedeviceandahighlevelputsthedeviceinstandbymode.
IfCSisbroughthighduringaprogramcycle,thecyclewillcompleteandthenthedevicewillenterstandbymode.
WhenCSishigh,SOisinhighZ.
CSmustbedrivenlowafterpoweruppriortoanysequencebeingstarted.
SCKSerialClockISynchronizesallactivitiesbetweenthememoryandcontroller.
Allincomingaddresses,dataandinstructionsarelatchedontherisingedgeofSCK.
DataoutisupdatedonSOafterthefallingedgeofSCK.
SISerialDataInIReceivesinstructions,addressesanddataontherisingedgeofSCK.
SOSerialDataOutODataistransferredoutafterthefallingedgeofSCK.
HOLDHoldIAhighlevelisrequiredfornormaloperation.
Oncethedeviceisselectedandaserialsequenceisstarted,thisinputmaybetakenlowtopauseserialcommunicationwithoutresettingtheserialse-quence.
ThepinmustbebroughtlowwhileSCKislowforimmediateuse.
IfSCKisnotlow,theHoldfunctionwillnotbeinvokeduntilthenextSCKhightolowtransition.
Thedevicemustremainselectedduringthissequence.
SOishighZduringtheHoldtimeandSIandSCKareinputsareignored.
Toresumeoperations,HOLDmustbepulledhighwhiletheSCKpinislow.
LoweringtheHOLDinputatanytimewilltaketoSOoutputtoHighZ.
FunctionalOperationBasicOperationThe64KbserialSRAMisdesignedtointerfacedirectlywithastandardSerialPeripheralInterface(SPI)commononmanystandardmicrocontrollers.
ItmayalsointerfacewithothernonSPIportsbyprogrammingdiscreteI/Olinestooperatethedevice.
TheserialSRAMcontainsan8bitinstructionregisterandisaccessedviatheSIpin.
TheCSpinmustbelowandtheHOLDpinmustbehighfortheentireoperation.
DataissampledonthefirstrisingedgeofSCKafterCSgoeslow.
Iftheclocklineisshared,theusercanasserttheHOLDinputandplacethedeviceintoaHoldmode.
AfterreleasingtheHOLDpin,theoperationwillresumefromthepointwhereitwasheld.
Thefollowingtablecontainsthepossibleinstructionsandformats.
Allinstructions,addressesanddataaretransferredMSBfirstandLSBlast.
Table9.
INSTRUCTIONSETInstructionInstructionFormatDescriptionREAD00000011ReaddatafrommemorystartingatselectedaddressWRITE00000010WritedatatomemorystartingatselectedaddressRDSR00000101ReadstatusregisterWRSR00000001WritestatusregisterREADOperationsTheserialSRAMREADisselectedbyenablingCSlow.
First,the8bitREADinstructionistransmittedtothedevicefollowedbythe16bitaddresswiththe3MSBsbeingdon'tcare.
AftertheREADinstructionandaddressesaresent,thedatastoredatthataddressinmemoryisshiftedoutontheSOpinaftertheoutputvalidtimefromtheclockedge.
Ifoperatinginpagemode,aftertheinitialwordofdataisshiftedout,thedatastoredatthenextmemorylocationonthepagecanbereadsequentiallybycontinuingtoprovideclockpulses.
Theinternaladdresspointerisautomaticallyincrementedtothenexthigheraddressonthepageaftereachwordofdataisreadout.
Thiscanbecontinuedfortheentirepagelengthof32wordslong.
Attheendofthepage,theaddressespointerwillbewrappedtothe0wordaddresswithinthepageandtheoperationcanbecontinuouslyloopedoverthe32wordsofthesamepage.
Ifoperatinginburstmode,aftertheinitialwordofdataisshiftedout,thedatastoredatthenextmemorylocationcanbereadsequentiallybycontinuingtoprovideclockpulses.
Theinternaladdresspointerisautomaticallyincrementedtothenexthigheraddressaftereachwordofdataisreadout.
Thiscanbecontinuedfortheentirearrayandwhenthehighestaddressisreached(1FFFh),theaddresscounterwrapstotheaddress0000h.
Thisallowstheburstreadcycletobecontinuedindefinitely.
AllREADoperationsareterminatedbypullingCShigh.
N64S830HAhttp://onsemi.
com7CSInstructionSI04325169810711SCK1514131221076543210HighZ16bitaddressDataOutSO212322242829303126272500000011Figure6.
WordREADSequenceFigure7.
PageandBurstREADSequenceCSInstructionSI04325169810711SCK1514131221076543210HighZ16bitaddressDataOutfromADDR1SO21232224282930312627250000001176543210DataOutfromADDR27654321076543210.
.
.
32343335394041423738364345444647Don'tCareDon'tCareADDR1DataOutfromADDR3DataOutfromADDRnN64S830HAhttp://onsemi.
com8PageXWordYPageXWordY+2PageXWordY+1PageXWord31PageXWord0PageXWord1SISODataWords:sequential,attheendofthepagetheaddresswrapsbacktothebeginningofthepage16bitaddressPageaddress(X)Wordaddress(Y)Figure8.
PageREADSequencePageXWordYPageXWord31PageXWordY+1PageXWord0PageX+1WordYPageX+1WordY+1SISO16bitaddressPageaddress(X)Wordaddress(Y)DataWords:sequential,attheendofthepagetheaddresswrapstothebeginningofthepageandcontinuesincrementinguptothestartingwordaddress.
Atthattime,theaddressincrementstothenextpageandtheburstcontinues.
.
.
.
PageXWord1.
.
.
PageXWordY1Figure9.
BurstREADSequenceWRITEOperationsTheserialSRAMWRITEisselectedbyenablingCSlow.
First,the8bitWRITEinstructionistransmittedtothedevicefollowedbythe16bitaddresswiththe3MSBsbeingdon'tcare.
AftertheWRITEinstructionandaddressesaresent,thedatatobestoredinmemoryisshiftedinontheSIpin.
Ifoperatinginpagemode,aftertheinitialwordofdataisshiftedin,additionaldatawordscanbewrittenaslongastheaddressrequestedissequentialonthesamepage.
SimplywritethedataonSIpinandcontinuetoprovideclockpulses.
Theinternaladdresspointerisautomaticallyincrementedtothenexthigheraddressonthepageaftereachwordofdataiswrittenin.
Thiscanbecontinuedfortheentirepagelengthof32wordslong.
Attheendofthepage,theaddressespointerwillbewrappedtothe0wordaddresswithinthepageandtheoperationcanbecontinuouslyloopedoverthe32wordsofthesamepage.
Thenewdatawillreplacedataalreadystoredinthememorylocations.
Ifoperatinginburstmode,aftertheinitialwordofdataisshiftedin,additionaldatawordscanbewrittentothenextsequentialmemorylocationsbycontinuingtoprovideclockpulses.
Theinternaladdresspointerisautomaticallyincrementedtothenexthigheraddressaftereachwordofdataisreadout.
Thiscanbecontinuedfortheentirearrayandwhenthehighestaddressisreached(1FFFh),theaddresscounterwrapstotheaddress0000h.
Thisallowstheburstwritecycletobecontinuedindefinitely.
Again,thenewdatawillreplacedataalreadystoredinthememorylocations.
AllWRITEoperationsareterminatedbypullingCShigh.
CSInstructionSI04325169810711SCK1514131221076543210HighZ16bitaddressDataInSO212322242829303126272500000010.
.
.
Figure10.
WordWRITESequenceN64S830HAhttp://onsemi.
com9CSInstructionSI04325169810711SCK1514131221076543210HighZ16bitaddressDataIntoADDR1SO21232224282930312627250000001076543210DataIntoADDR27654321076543210.
.
.
32343335394041423738364345444647ADDR1DataIntoADDR3DataIntoADDRnHighZFigure11.
PageandBurstWRITESequence16bitaddressPageaddress(X)Wordaddress(Y)PageXWordYPageXWordY+2PageXWordY+1PageXWord31PageXWord0PageXWord1SISODataWords:sequential,attheendofthepagetheaddresswrapsbacktothebeginningofthepageHighZFigure12.
PageWRITESequencePageXWordYPageXWord31PageXWordY+1PageXWord0PageX+1WordYPageX+1WordY+1SISO16bitaddressPageaddress(X)Wordaddress(Y)DataWords:sequential,attheendofthepagetheaddresswrapstothebeginningofthepageandcontinuesincrementinguptothestartingwordaddress.
Atthattime,theaddressincrementstothenextpageandtheburstcontinues.
.
.
.
PageXWord1.
.
.
PageXWordY1HighZFigure13.
BurstWRITESequenceN64S830HAhttp://onsemi.
com10WRITEStatusRegisterInstruction(WRSR)Thisinstructionprovidestheabilitytowritethestatusregisterandselectamongseveraloperatingmodes.
Severaloftheregisterbitsmustbesettoalow'0'.
Thetimingsequencetowritetothestatusregisterisshownbelow,followedbytheorganizationofthestatusregister.
CSInstructionSI04325169810711SCK76543210HighZStatusRegisterDataInSO0000010121314150Figure14.
WRITEStatusRegisterSequenceBit0Bit1Bit2Bit3Bit4Bit5Bit6Bit7HoldFunction0=Hold(Default)1=NoHoldReservedMust=0Mode00=WordMode(Default)10=PageMode01=BurstMode11=ReservedFigure15.
StatusRegisterDatatoWriteN64S830HAhttp://onsemi.
com11READStatusRegisterInstruction(RDSR)ThisinstructionprovidestheabilitytoreadtheprogrammablebitsoftheStatusRegister.
Theseregisterbitsmaybereadatanytimebyperformingthefollowingtimingsequence.
Bits0,6and7containthedataforthefunctionaloperationandBit1willreaddatatype'1'forthe64Kbdevice.
CSInstructionSI04325169810711SCK76543210HighZStatusRegisterDataOutSO0000010121314151Figure16.
READStatusRegisterInstruction(RDSR)Figure17.
StatusRegisterBit0Bit1Bit2Bit3Bit4Bit5Bit6Bit7HoldFunction0=Hold1=NoHoldMode00=WordMode10=PageMode01=BurstMode11=Reserved00001=64KbPowerUpStateTheserialSRAMentersaknowstateatpoweruptime.
ThedeviceisinlowpowerstandbystatewithCS=1.
AlowlevelonCSisrequiredtoenteranactivestate.
SOIC8CASE751AZISSUEBDATE18MAY20157.
008X0.
768X1.
521.
27DIMENSIONS:MILLIMETERS1PITCH*ForadditionalinformationonourPbFreestrategyandsolderingdetails,pleasedownloadtheONSemiconductorSolderingandMountingTechniquesReferenceManual,SOLDERRM/D.
SOLDERINGFOOTPRINT*RECOMMENDEDSCALE1:118NOTES:1.
DIMENSIONINGANDTOLERANCINGPERASMEY14.
5M,1994.
2.
CONTROLLINGDIMENSION:MILLIMETERS.
3.
DIMENSIONbDOESNOTINCLUDEDAMBARPROTRUSION.
ALLOWABLEPROTRUSIONSHALLBE0.
004mmINEXCESSOFMAXIMUMMATERIALCONDITION.
4.
DIMENSIONDDOESNOTINCLUDEMOLDFLASH,PROTRUSIONSORGATEBURRS.
MOLDFLASH,PROTRUSIONSORGATEBURRSSHALLNOTEXCEED0.
006mmPERSIDE.
DIMENSIONE1DOESNOTINCLUDEINTERLEADFLASHORPROTRUSION.
INTERLEADFLASHORPROTRUSIONSHALLNOTEXCEED0.
010mmPERSIDE.
5.
THEPACKAGETOPMAYBESMALLERTHANTHEPACKAGEBOTTOM.
DIMENSIONSDANDE1AREDETERMINEDATTHEOUTERMOSTEXTREMESOFTHEPLASTICBODYATDATUMH.
6.
DIMENSIONSAANDBARETOBEDETERMINEDATDATUMH.
7.
DIMENSIONSbANDcAPPLYTOTHEFLATSECTIONOFTHELEADBETWEEN0.
10TO0.
25FROMTHELEADTIP.
8.
A1ISDEFINEDASTHEVERTICALDISTANCEFROMTHESEATINGPLANETOTHELOWESTPOINTONTHEPACKAGEBODY.
1485SEATINGPLANEDETAILA0.
10CA1DIMMINMAXMILLIMETERSh0.
250.
41A---1.
75b0.
310.
51L0.
401.
27e1.
27BSCc0.
100.
25A10.
100.
25L2M0.
25A-Bb8XCDABCTOPVIEWSIDEVIEW0.
25BSCE13.
90BSCE6.
00BSCDeD0.
20C0.
10C2XNOTE6NOTES4&5NOTES4&5SIDEVIEWENDVIEWEE1D0.
10CDDNOTES3&7NOTE6NOTE8AA2A21.
25---D4.
90BSCHSEATINGPLANEDETAILALCL2h45CHAMFER5cNOTE7XXXXX=SpecificDeviceCodeA=AssemblyLocationL=WaferLotY=YearW=WorkWeekG=PbFreePackageGENERICMARKINGDIAGRAM**Thisinformationisgeneric.
Pleaserefertodevicedatasheetforactualpartmarking.
PbFreeindicator,"G",mayornotbepresent.
XXXXXALYWXG18MECHANICALCASEOUTLINEPACKAGEDIMENSIONSONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
98AON34918EDOCUMENTNUMBER:DESCRIPTION:ElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromtheDocumentRepository.
Printedversionsareuncontrolledexceptwhenstamped"CONTROLLEDCOPY"inred.
PAGE1OF1SOIC8SemiconductorComponentsIndustries,LLC,2019www.
onsemi.
comTSSOP8CASE948S01ISSUECDATE20JUN2008GENERICMARKINGDIAGRAM*XXXYWWAGG*Thisinformationisgeneric.
Pleaserefertodevicedatasheetforactualpartmarking.
PbFreeindicator,"G"ormicrodot"G",mayormaynotbepresent.
DIMMINMAXMINMAXINCHESMILLIMETERSA2.
903.
100.
1140.
122B4.
304.
500.
1690.
177C---1.
10---0.
043D0.
050.
150.
0020.
006F0.
500.
700.
0200.
028G0.
65BSC0.
026BSCL6.
40BSC0.
252BSCM0808NOTES:1.
DIMENSIONINGANDTOLERANCINGPERANSIY14.
5M,1982.
2.
CONTROLLINGDIMENSION:MILLIMETER.
3.
DIMENSIONADOESNOTINCLUDEMOLDFLASH.
PROTRUSIONSORGATEBURRS.
MOLDFLASHORGATEBURRSSHALLNOTEXCEED0.
15(0.
006)PERSIDE.
4.
DIMENSIONBDOESNOTINCLUDEINTERLEADFLASHORPROTRUSION.
INTERLEADFLASHORPROTRUSIONSHALLNOTEXCEED0.
25(0.
010)PERSIDE.
5.
TERMINALNUMBERSARESHOWNFORREFERENCEONLY.
6.
DIMENSIONAANDBARETOBEDETERMINEDATDATUMPLANE-W-.
____SEATINGPLANEPIN11485DETAILEBCDAGL2XL/2USU0.
20(0.
008)TSUM0.
10(0.
004)VST0.
076(0.
003)TVW8xREFKSCALE2:1IDENTK0.
190.
300.
0070.
012SU0.
20(0.
008)TDETAILEFM0.
25(0.
010)K1KJJ1SECTIONNNJ0.
090.
200.
0040.
008K10.
190.
250.
0070.
010J10.
090.
160.
0040.
006NNXXX=SpecificDeviceCodeA=AssemblyLocationY=YearWW=WorkWeekG=PbFreePackageMECHANICALCASEOUTLINEPACKAGEDIMENSIONShttp://onsemi.
com1SemiconductorComponentsIndustries,LLC,2002October,2002Rev.
0CaseOutlineNumber:XXXDOCUMENTNUMBER:STATUS:NEWSTANDARD:DESCRIPTION:98AON00697DONSEMICONDUCTORSTANDARDTSSOP8ElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromtheDocumentRepository.
Printedversionsareuncontrolledexceptwhenstamped"CONTROLLEDCOPY"inred.
PAGE1OF2DOCUMENTNUMBER:98AON00697DPAGE2OF2ISSUEREVISIONDATEORELEASEDFORPRODUCTION.
18APR2000AADDEDMARKINGDIAGRAMINFORMATION.
REQ.
BYV.
BASS.
13JAN2006BCORRECTEDMARKINGDIAGRAMPIN1LOCATIONANDMARKING.
REQ.
BYC.
REBELLO.
13MAR2006CREMOVEDEXPOSEDPADVIEWANDDIMENSIONSPANDP1.
CORRECTEDMARKINGINFORMATION.
REQ.
BYC.
REBELLO.
20JUN2008SemiconductorComponentsIndustries,LLC,2008June,2008Rev.
01CCaseOutlineNumber:948SONSemiconductorandareregisteredtrademarksofSemiconductorComponentsIndustries,LLC(SCILLC).
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"Typical"parameterswhichmaybeprovidedinSCILLCdatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
SCILLCdoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
SCILLCproductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody,orotherapplicationsintendedtosupportorsustainlife,orforanyotherapplicationinwhichthefailureoftheSCILLCproductcouldcreateasituationwherepersonalinjuryordeathmayoccur.
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121PublicationOrderNumber:N64S830HA/DN64S830HA64kbLowPowerSerialSRAMs8kx8BitOrganizationIntroductionTheONSemiconductorserialSRAMfamilyincludesseveralintegratedmemorydevicesincludingthis64kseriallyaccessedStaticRandomAccessMemory,internallyorganizedas8kwordsby8bits.
ThedevicesaredesignedandfabricatedusingONSemiconductor'sadvancedCMOStechnologytoprovidebothhighspeedperformanceandlowpower.
Thedevicesoperatewithasinglechipselect(CS)inputanduseasimpleSerialPeripheralInterface(SPI)serialbus.
Asingledatainanddataoutlineisusedalongwithaclocktoaccessdatawithinthedevices.
TheN64S830HAdevicesincludeaHOLDpinthatallowscommunicationtothedevicetobepaused.
Whilepaused,inputtransitionswillbeignored.
Thedevicescanoperateoverawidetemperaturerangeof40°Cto+85°Candcanbeavailableinseveralstandardpackageofferings.
FeaturesPowerSupplyRange:2.
5to3.
6VVeryLowStandbyCurrent:Aslowas1mAVeryLowOperatingCurrent:Aslowas3mASimpleMemoryControl:Singlechipselect(CS)Serialinput(SI)andserialoutput(SO)FlexibleOperatingModes:WordreadandwritePagemode(32wordpage)Burstmode(fullarray)Organization:8kx8bitSelfTimedWriteCyclesBuiltinWriteProtection(CSHigh)HOLDPinforPausingCommunicationHighReliability:UnlimitedwritecyclesGreenSOICandTSSOPTheseDevicesarePbFree,HalogenFree/BFRFreeandareRoHSComplianthttp://onsemi.
comDevicePackageORDERINGINFORMATIONN64S830HAS22ISOIC8(PbFree)Shipping100Units/TubeN64S830HAT22ITSSOP8(PbFree)100Units/TubeN64S830HAS22ITSOIC8(PbFree)3000/Tape&ReelN64S830HAT22ITTSSOP8(PbFree)3000/Tape&ReelForinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationBrochure,BRD8011/D.
TSSOP8TSUFFIXCASE948ALMARKINGDIAGRAMSB125XXXXYZZXXXX=DateCodeY=AssemblyCodeZZ=LotTraceabilitySOIC8SSUFFIXCASE751BDB115XXXXYZZN64S830HAhttp://onsemi.
com2SONCVSSVCCSCKSICSHOLDVCCSCKSIHOLDSONCVSSCS11SOIC8TSSOP8Figure1.
PinConnections(TopView)Table1.
DEVICEOPTIONSPartNumberDensityPowerSupply(V)Speed(MHz)PackageTypicalStandbyCurrentRead/WriteOperatingCurrentN64S830HAS264Kb3.
020SOIC1mA3mA@1MhzN64S830HAT2TSSOPTable2.
PINNAMESPinNamePinFunctionCSChipSelectInputSCKSerialClockInputSISerialDataInputSOSerialDataOutputHOLDHoldInputNCNoConnectVCCPowerVSSGround64KbSRAMArrayDecodeLogicClockCircuitrySCKDataInReceiverSDIDataOutBufferSDOFigure2.
FunctionalBlockDiagramHOLDCSN64S830HAhttp://onsemi.
com3Table3.
ABSOLUTEMAXIMUMRATINGSItemSymbolRatingUnitVoltageonanypinrelativetoVSSVIN,OUT–0.
3toVCC+0.
3VVoltageonVCCSupplyRelativetoVSSVCC–0.
3to4.
5VPowerDissipationPD500mWStorageTemperatureTSTG–40to125°COperatingTemperatureTA40to+85°CSolderingTemperatureandTimeTSOLDER260°C,10sec°CStressesexceedingMaximumRatingsmaydamagethedevice.
MaximumRatingsarestressratingsonly.
FunctionaloperationabovetheRecommendedOperatingConditionsisnotimplied.
ExtendedexposuretostressesabovetheRecommendedOperatingConditionsmayaffectdevicereliability.
Table4.
OPERATINGCHARACTERISTICS(OverSpecifiedTemperatureRange)ItemSymbolTestConditionsMinTyp(Note1)MaxUnitSupplyVoltageVCC3VDevice2.
53.
6VInputHighVoltageVIH0.
7xVCCVCC+0.
3VInputLowVoltageVIL–0.
30.
8VOutputHighVoltageVOHIOH=0.
4mAVCC–0.
5VOutputLowVoltageVOLIOL=1mA0.
2VInputLeakageCurrentILICS=VCC,VIN=0toVCC0.
5mAOutputLeakageCurrentILOCS=VCC,VOUT=0toVCC0.
5mARead/WriteOperatingCurrentICC1F=1MHz,IOUT=03mAICC2F=10MHz,IOUT=06mAICC3F=fCLKMAX,IOUT=010mAStandbyCurrentISBCS=VCC,VIN=VSSorVCC14mA1.
TypicalvaluesaremeasuredatVcc=VccTyp.
,TA=25°Candarenot100%tested.
Table5.
CAPACITANCE(Note2)ItemSymbolTestConditionMinMaxUnitInputCapacitanceCINVIN=0V,f=1MHz,TA=25°C7pFI/OCapacitanceCI/OVIN=0V,f=1MHz,TA=25°C7pF2.
Theseparametersareverifiedindevicecharacterizationandarenot100%testedTable6.
TIMINGTESTCONDITIONSItemInputPulseLevel0.
1VCCto0.
9VCCInputRiseandFallTime5nsInputandOutputTimingReferenceLevels0.
5VCCOutputLoadCL=100pFOperatingTemperature40to+85°CN64S830HAhttp://onsemi.
com4Table7.
TIMINGItemSymbolMinMaxUnitsClockFrequencyfCLK20MHzClockRiseTimetR2msClockFallTimetF2msClockHighTimetHI25nsClockLowTimetLO25nsClockDelayTimetCLD25nsCSSetupTimetCSS25nsCSHoldTimetCSH50nsCSDisableTimetCSD25nsSCKtoCStSCS5nsDataSetupTimetSU10nsDataHoldTimetHD10nsOutputValidFromClockLowtV25nsOutputHoldTimetHO0nsOutputDisableTimetDIS20nsHOLDSetupTimetHS10nsHOLDHoldTimetHH10nsHOLDLowtoOutputHighZtHZ10nsHOLDHightoOutputValidtHV50nsN64S830HAhttp://onsemi.
com5CSMSBinSCKSOSILSBinHighZFigure3.
SerialInputTimingtHDtSUtRtCSStFtCSHtSCStCLDtCSDCSMSBoutSCKSISOLSBoutDon'tCareFigure4.
SerialOutputTimingCSn+2SCKSISOn+1nHighZnn1nn1n+2n+1nDon'tCareFigure5.
HoldTimingtVtDIStCSHtLOtHIHOLDtHStHHtHStHHtHVtSUtHZN64S830HAhttp://onsemi.
com6Table8.
CONTROLSIGNALDESCRIPTIONSSignalNameI/ODescriptionCSChipSelectIAlowlevelselectsthedeviceandahighlevelputsthedeviceinstandbymode.
IfCSisbroughthighduringaprogramcycle,thecyclewillcompleteandthenthedevicewillenterstandbymode.
WhenCSishigh,SOisinhighZ.
CSmustbedrivenlowafterpoweruppriortoanysequencebeingstarted.
SCKSerialClockISynchronizesallactivitiesbetweenthememoryandcontroller.
Allincomingaddresses,dataandinstructionsarelatchedontherisingedgeofSCK.
DataoutisupdatedonSOafterthefallingedgeofSCK.
SISerialDataInIReceivesinstructions,addressesanddataontherisingedgeofSCK.
SOSerialDataOutODataistransferredoutafterthefallingedgeofSCK.
HOLDHoldIAhighlevelisrequiredfornormaloperation.
Oncethedeviceisselectedandaserialsequenceisstarted,thisinputmaybetakenlowtopauseserialcommunicationwithoutresettingtheserialse-quence.
ThepinmustbebroughtlowwhileSCKislowforimmediateuse.
IfSCKisnotlow,theHoldfunctionwillnotbeinvokeduntilthenextSCKhightolowtransition.
Thedevicemustremainselectedduringthissequence.
SOishighZduringtheHoldtimeandSIandSCKareinputsareignored.
Toresumeoperations,HOLDmustbepulledhighwhiletheSCKpinislow.
LoweringtheHOLDinputatanytimewilltaketoSOoutputtoHighZ.
FunctionalOperationBasicOperationThe64KbserialSRAMisdesignedtointerfacedirectlywithastandardSerialPeripheralInterface(SPI)commononmanystandardmicrocontrollers.
ItmayalsointerfacewithothernonSPIportsbyprogrammingdiscreteI/Olinestooperatethedevice.
TheserialSRAMcontainsan8bitinstructionregisterandisaccessedviatheSIpin.
TheCSpinmustbelowandtheHOLDpinmustbehighfortheentireoperation.
DataissampledonthefirstrisingedgeofSCKafterCSgoeslow.
Iftheclocklineisshared,theusercanasserttheHOLDinputandplacethedeviceintoaHoldmode.
AfterreleasingtheHOLDpin,theoperationwillresumefromthepointwhereitwasheld.
Thefollowingtablecontainsthepossibleinstructionsandformats.
Allinstructions,addressesanddataaretransferredMSBfirstandLSBlast.
Table9.
INSTRUCTIONSETInstructionInstructionFormatDescriptionREAD00000011ReaddatafrommemorystartingatselectedaddressWRITE00000010WritedatatomemorystartingatselectedaddressRDSR00000101ReadstatusregisterWRSR00000001WritestatusregisterREADOperationsTheserialSRAMREADisselectedbyenablingCSlow.
First,the8bitREADinstructionistransmittedtothedevicefollowedbythe16bitaddresswiththe3MSBsbeingdon'tcare.
AftertheREADinstructionandaddressesaresent,thedatastoredatthataddressinmemoryisshiftedoutontheSOpinaftertheoutputvalidtimefromtheclockedge.
Ifoperatinginpagemode,aftertheinitialwordofdataisshiftedout,thedatastoredatthenextmemorylocationonthepagecanbereadsequentiallybycontinuingtoprovideclockpulses.
Theinternaladdresspointerisautomaticallyincrementedtothenexthigheraddressonthepageaftereachwordofdataisreadout.
Thiscanbecontinuedfortheentirepagelengthof32wordslong.
Attheendofthepage,theaddressespointerwillbewrappedtothe0wordaddresswithinthepageandtheoperationcanbecontinuouslyloopedoverthe32wordsofthesamepage.
Ifoperatinginburstmode,aftertheinitialwordofdataisshiftedout,thedatastoredatthenextmemorylocationcanbereadsequentiallybycontinuingtoprovideclockpulses.
Theinternaladdresspointerisautomaticallyincrementedtothenexthigheraddressaftereachwordofdataisreadout.
Thiscanbecontinuedfortheentirearrayandwhenthehighestaddressisreached(1FFFh),theaddresscounterwrapstotheaddress0000h.
Thisallowstheburstreadcycletobecontinuedindefinitely.
AllREADoperationsareterminatedbypullingCShigh.
N64S830HAhttp://onsemi.
com7CSInstructionSI04325169810711SCK1514131221076543210HighZ16bitaddressDataOutSO212322242829303126272500000011Figure6.
WordREADSequenceFigure7.
PageandBurstREADSequenceCSInstructionSI04325169810711SCK1514131221076543210HighZ16bitaddressDataOutfromADDR1SO21232224282930312627250000001176543210DataOutfromADDR27654321076543210.
.
.
32343335394041423738364345444647Don'tCareDon'tCareADDR1DataOutfromADDR3DataOutfromADDRnN64S830HAhttp://onsemi.
com8PageXWordYPageXWordY+2PageXWordY+1PageXWord31PageXWord0PageXWord1SISODataWords:sequential,attheendofthepagetheaddresswrapsbacktothebeginningofthepage16bitaddressPageaddress(X)Wordaddress(Y)Figure8.
PageREADSequencePageXWordYPageXWord31PageXWordY+1PageXWord0PageX+1WordYPageX+1WordY+1SISO16bitaddressPageaddress(X)Wordaddress(Y)DataWords:sequential,attheendofthepagetheaddresswrapstothebeginningofthepageandcontinuesincrementinguptothestartingwordaddress.
Atthattime,theaddressincrementstothenextpageandtheburstcontinues.
.
.
.
PageXWord1.
.
.
PageXWordY1Figure9.
BurstREADSequenceWRITEOperationsTheserialSRAMWRITEisselectedbyenablingCSlow.
First,the8bitWRITEinstructionistransmittedtothedevicefollowedbythe16bitaddresswiththe3MSBsbeingdon'tcare.
AftertheWRITEinstructionandaddressesaresent,thedatatobestoredinmemoryisshiftedinontheSIpin.
Ifoperatinginpagemode,aftertheinitialwordofdataisshiftedin,additionaldatawordscanbewrittenaslongastheaddressrequestedissequentialonthesamepage.
SimplywritethedataonSIpinandcontinuetoprovideclockpulses.
Theinternaladdresspointerisautomaticallyincrementedtothenexthigheraddressonthepageaftereachwordofdataiswrittenin.
Thiscanbecontinuedfortheentirepagelengthof32wordslong.
Attheendofthepage,theaddressespointerwillbewrappedtothe0wordaddresswithinthepageandtheoperationcanbecontinuouslyloopedoverthe32wordsofthesamepage.
Thenewdatawillreplacedataalreadystoredinthememorylocations.
Ifoperatinginburstmode,aftertheinitialwordofdataisshiftedin,additionaldatawordscanbewrittentothenextsequentialmemorylocationsbycontinuingtoprovideclockpulses.
Theinternaladdresspointerisautomaticallyincrementedtothenexthigheraddressaftereachwordofdataisreadout.
Thiscanbecontinuedfortheentirearrayandwhenthehighestaddressisreached(1FFFh),theaddresscounterwrapstotheaddress0000h.
Thisallowstheburstwritecycletobecontinuedindefinitely.
Again,thenewdatawillreplacedataalreadystoredinthememorylocations.
AllWRITEoperationsareterminatedbypullingCShigh.
CSInstructionSI04325169810711SCK1514131221076543210HighZ16bitaddressDataInSO212322242829303126272500000010.
.
.
Figure10.
WordWRITESequenceN64S830HAhttp://onsemi.
com9CSInstructionSI04325169810711SCK1514131221076543210HighZ16bitaddressDataIntoADDR1SO21232224282930312627250000001076543210DataIntoADDR27654321076543210.
.
.
32343335394041423738364345444647ADDR1DataIntoADDR3DataIntoADDRnHighZFigure11.
PageandBurstWRITESequence16bitaddressPageaddress(X)Wordaddress(Y)PageXWordYPageXWordY+2PageXWordY+1PageXWord31PageXWord0PageXWord1SISODataWords:sequential,attheendofthepagetheaddresswrapsbacktothebeginningofthepageHighZFigure12.
PageWRITESequencePageXWordYPageXWord31PageXWordY+1PageXWord0PageX+1WordYPageX+1WordY+1SISO16bitaddressPageaddress(X)Wordaddress(Y)DataWords:sequential,attheendofthepagetheaddresswrapstothebeginningofthepageandcontinuesincrementinguptothestartingwordaddress.
Atthattime,theaddressincrementstothenextpageandtheburstcontinues.
.
.
.
PageXWord1.
.
.
PageXWordY1HighZFigure13.
BurstWRITESequenceN64S830HAhttp://onsemi.
com10WRITEStatusRegisterInstruction(WRSR)Thisinstructionprovidestheabilitytowritethestatusregisterandselectamongseveraloperatingmodes.
Severaloftheregisterbitsmustbesettoalow'0'.
Thetimingsequencetowritetothestatusregisterisshownbelow,followedbytheorganizationofthestatusregister.
CSInstructionSI04325169810711SCK76543210HighZStatusRegisterDataInSO0000010121314150Figure14.
WRITEStatusRegisterSequenceBit0Bit1Bit2Bit3Bit4Bit5Bit6Bit7HoldFunction0=Hold(Default)1=NoHoldReservedMust=0Mode00=WordMode(Default)10=PageMode01=BurstMode11=ReservedFigure15.
StatusRegisterDatatoWriteN64S830HAhttp://onsemi.
com11READStatusRegisterInstruction(RDSR)ThisinstructionprovidestheabilitytoreadtheprogrammablebitsoftheStatusRegister.
Theseregisterbitsmaybereadatanytimebyperformingthefollowingtimingsequence.
Bits0,6and7containthedataforthefunctionaloperationandBit1willreaddatatype'1'forthe64Kbdevice.
CSInstructionSI04325169810711SCK76543210HighZStatusRegisterDataOutSO0000010121314151Figure16.
READStatusRegisterInstruction(RDSR)Figure17.
StatusRegisterBit0Bit1Bit2Bit3Bit4Bit5Bit6Bit7HoldFunction0=Hold1=NoHoldMode00=WordMode10=PageMode01=BurstMode11=Reserved00001=64KbPowerUpStateTheserialSRAMentersaknowstateatpoweruptime.
ThedeviceisinlowpowerstandbystatewithCS=1.
AlowlevelonCSisrequiredtoenteranactivestate.
SOIC8CASE751AZISSUEBDATE18MAY20157.
008X0.
768X1.
521.
27DIMENSIONS:MILLIMETERS1PITCH*ForadditionalinformationonourPbFreestrategyandsolderingdetails,pleasedownloadtheONSemiconductorSolderingandMountingTechniquesReferenceManual,SOLDERRM/D.
SOLDERINGFOOTPRINT*RECOMMENDEDSCALE1:118NOTES:1.
DIMENSIONINGANDTOLERANCINGPERASMEY14.
5M,1994.
2.
CONTROLLINGDIMENSION:MILLIMETERS.
3.
DIMENSIONbDOESNOTINCLUDEDAMBARPROTRUSION.
ALLOWABLEPROTRUSIONSHALLBE0.
004mmINEXCESSOFMAXIMUMMATERIALCONDITION.
4.
DIMENSIONDDOESNOTINCLUDEMOLDFLASH,PROTRUSIONSORGATEBURRS.
MOLDFLASH,PROTRUSIONSORGATEBURRSSHALLNOTEXCEED0.
006mmPERSIDE.
DIMENSIONE1DOESNOTINCLUDEINTERLEADFLASHORPROTRUSION.
INTERLEADFLASHORPROTRUSIONSHALLNOTEXCEED0.
010mmPERSIDE.
5.
THEPACKAGETOPMAYBESMALLERTHANTHEPACKAGEBOTTOM.
DIMENSIONSDANDE1AREDETERMINEDATTHEOUTERMOSTEXTREMESOFTHEPLASTICBODYATDATUMH.
6.
DIMENSIONSAANDBARETOBEDETERMINEDATDATUMH.
7.
DIMENSIONSbANDcAPPLYTOTHEFLATSECTIONOFTHELEADBETWEEN0.
10TO0.
25FROMTHELEADTIP.
8.
A1ISDEFINEDASTHEVERTICALDISTANCEFROMTHESEATINGPLANETOTHELOWESTPOINTONTHEPACKAGEBODY.
1485SEATINGPLANEDETAILA0.
10CA1DIMMINMAXMILLIMETERSh0.
250.
41A---1.
75b0.
310.
51L0.
401.
27e1.
27BSCc0.
100.
25A10.
100.
25L2M0.
25A-Bb8XCDABCTOPVIEWSIDEVIEW0.
25BSCE13.
90BSCE6.
00BSCDeD0.
20C0.
10C2XNOTE6NOTES4&5NOTES4&5SIDEVIEWENDVIEWEE1D0.
10CDDNOTES3&7NOTE6NOTE8AA2A21.
25---D4.
90BSCHSEATINGPLANEDETAILALCL2h45CHAMFER5cNOTE7XXXXX=SpecificDeviceCodeA=AssemblyLocationL=WaferLotY=YearW=WorkWeekG=PbFreePackageGENERICMARKINGDIAGRAM**Thisinformationisgeneric.
Pleaserefertodevicedatasheetforactualpartmarking.
PbFreeindicator,"G",mayornotbepresent.
XXXXXALYWXG18MECHANICALCASEOUTLINEPACKAGEDIMENSIONSONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
98AON34918EDOCUMENTNUMBER:DESCRIPTION:ElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromtheDocumentRepository.
Printedversionsareuncontrolledexceptwhenstamped"CONTROLLEDCOPY"inred.
PAGE1OF1SOIC8SemiconductorComponentsIndustries,LLC,2019www.
onsemi.
comTSSOP8CASE948S01ISSUECDATE20JUN2008GENERICMARKINGDIAGRAM*XXXYWWAGG*Thisinformationisgeneric.
Pleaserefertodevicedatasheetforactualpartmarking.
PbFreeindicator,"G"ormicrodot"G",mayormaynotbepresent.
DIMMINMAXMINMAXINCHESMILLIMETERSA2.
903.
100.
1140.
122B4.
304.
500.
1690.
177C---1.
10---0.
043D0.
050.
150.
0020.
006F0.
500.
700.
0200.
028G0.
65BSC0.
026BSCL6.
40BSC0.
252BSCM0808NOTES:1.
DIMENSIONINGANDTOLERANCINGPERANSIY14.
5M,1982.
2.
CONTROLLINGDIMENSION:MILLIMETER.
3.
DIMENSIONADOESNOTINCLUDEMOLDFLASH.
PROTRUSIONSORGATEBURRS.
MOLDFLASHORGATEBURRSSHALLNOTEXCEED0.
15(0.
006)PERSIDE.
4.
DIMENSIONBDOESNOTINCLUDEINTERLEADFLASHORPROTRUSION.
INTERLEADFLASHORPROTRUSIONSHALLNOTEXCEED0.
25(0.
010)PERSIDE.
5.
TERMINALNUMBERSARESHOWNFORREFERENCEONLY.
6.
DIMENSIONAANDBARETOBEDETERMINEDATDATUMPLANE-W-.
____SEATINGPLANEPIN11485DETAILEBCDAGL2XL/2USU0.
20(0.
008)TSUM0.
10(0.
004)VST0.
076(0.
003)TVW8xREFKSCALE2:1IDENTK0.
190.
300.
0070.
012SU0.
20(0.
008)TDETAILEFM0.
25(0.
010)K1KJJ1SECTIONNNJ0.
090.
200.
0040.
008K10.
190.
250.
0070.
010J10.
090.
160.
0040.
006NNXXX=SpecificDeviceCodeA=AssemblyLocationY=YearWW=WorkWeekG=PbFreePackageMECHANICALCASEOUTLINEPACKAGEDIMENSIONShttp://onsemi.
com1SemiconductorComponentsIndustries,LLC,2002October,2002Rev.
0CaseOutlineNumber:XXXDOCUMENTNUMBER:STATUS:NEWSTANDARD:DESCRIPTION:98AON00697DONSEMICONDUCTORSTANDARDTSSOP8ElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromtheDocumentRepository.
Printedversionsareuncontrolledexceptwhenstamped"CONTROLLEDCOPY"inred.
PAGE1OF2DOCUMENTNUMBER:98AON00697DPAGE2OF2ISSUEREVISIONDATEORELEASEDFORPRODUCTION.
18APR2000AADDEDMARKINGDIAGRAMINFORMATION.
REQ.
BYV.
BASS.
13JAN2006BCORRECTEDMARKINGDIAGRAMPIN1LOCATIONANDMARKING.
REQ.
BYC.
REBELLO.
13MAR2006CREMOVEDEXPOSEDPADVIEWANDDIMENSIONSPANDP1.
CORRECTEDMARKINGINFORMATION.
REQ.
BYC.
REBELLO.
20JUN2008SemiconductorComponentsIndustries,LLC,2008June,2008Rev.
01CCaseOutlineNumber:948SONSemiconductorandareregisteredtrademarksofSemiconductorComponentsIndustries,LLC(SCILLC).
SCILLCreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesSCILLCassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
"Typical"parameterswhichmaybeprovidedinSCILLCdatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
SCILLCdoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
SCILLCproductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody,orotherapplicationsintendedtosupportorsustainlife,orforanyotherapplicationinwhichthefailureoftheSCILLCproductcouldcreateasituationwherepersonalinjuryordeathmayoccur.
ShouldBuyerpurchaseoruseSCILLCproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdSCILLCanditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatSCILLCwasnegligentregardingthedesignormanufactureofthepart.
SCILLCisanEqualOpportunity/AffirmativeActionEmployer.
Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner.
www.
onsemi.
com1ONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/PatentMarking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
ONSemiconductorisanEqualOpportunity/AffirmativeActionEmployer.
Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner.
PUBLICATIONORDERINGINFORMATIONTECHNICALSUPPORTNorthAmericanTechnicalSupport:VoiceMail:18002829855TollFreeUSA/CanadaPhone:011421337902910LITERATUREFULFILLMENT:EmailRequeststo:orderlit@onsemi.
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