AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,intellectualpropertymattersandotherimportantdisclaimers.
PRODUCTIONDATA.
EnglishDataSheet:SBOS469INA199ZHCS912G–APRIL2009–REVISEDFEBRUARY2017INA19926V、、双双向向、、零零漂漂移移、、低低侧侧或或高高侧侧、、电电压压输输出出、、电电流流分分流流监监控控器器11特特性性1宽共模范围:–0.
3V至26V偏移电压:±150μV(最大值)(支持10mV满量程分流压降)精度:–增益误差(最大过热误差):–±1%(C版本)–±1.
5%(A和B版本)–0.
5V/°C偏移漂移(最大值)–10ppm/°C增益漂移(最大值)增益选择:–INA199x1:50V/V–INA199x2:100V/V–INA199x3:200V/V静态电流:100μA(最大值)封装:6引脚SC70、10引脚UQFN2应应用用笔记本电脑手机符合Qi标准的无线充电发送器电信设备电源管理电池充电器3说说明明INA199系列电压输出、电流分流监控器(也称为电流传感放大器)常用于过流保护、针对系统优化的精密电流测量或闭环反馈电路.
该系列器件可在独立于电源电压的–0.
3V至26V共模电压下感应分流电阻器上的电压降.
共有三种固定增益可供选择:50V/V、100V/V和200V/V.
该系列器件采用零漂移架构,偏移较低,因此在进行电流感测时能够将分流电阻器两端的最大压降保持在最低10mV的满量程.
这些器件由2.
7V至26V的单个电源供电,消耗的最大电源电流为100A.
所有版本的额定温度均为–40°C至125°C,并且提供了SC70-6和薄型UQFN-10两种封装.
器器件件信信息息(1)器器件件型型号号封封装装封封装装尺尺寸寸((标标称称值值))INA199SC70(6)2.
00mm*1.
25mmUQFN(10)1.
80mmx1.
40mm(1)要了解所有可用封装,请参见数据表末尾的可订购产品附录.
简简化化电电路路原原理理图图2INA199ZHCS912G–APRIL2009–REVISEDFEBRUARY2017www.
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cn版权2009–2017,TexasInstrumentsIncorporated目目录录1特特性性.
12应应用用.
13说说明明.
14修修订订历历史史记记录录25DeviceComparisonTable.
46PinConfigurationandFunctions.
47Specifications.
57.
1AbsoluteMaximumRatings57.
2ESDRatings.
57.
3RecommendedOperatingConditions.
67.
4ThermalInformation.
67.
5ElectricalCharacteristics.
77.
6TypicalCharacteristics.
88DetailedDescription128.
1Overview128.
2FunctionalBlockDiagram128.
3FeatureDescription.
138.
4DeviceFunctionalModes.
149ApplicationandImplementation199.
1ApplicationInformation.
199.
2TypicalApplications1910PowerSupplyRecommendations2211Layout.
2211.
1LayoutGuidelines2211.
2LayoutExample2212器器件件和和文文档档支支持持2312.
1文档支持.
2312.
2接收文档更新通知2312.
3社区资源.
2312.
4商标.
2312.
5静电放电警告.
2312.
6Glossary.
2313机机械械、、封封装装和和可可订订购购信信息息.
234修修订订历历史史记记录录注:之前版本的页码可能与当前版本有所不同.
ChangesfromRevisionF(June2016)toRevisionGPage已更改精度特性项目的第一个子项目:从子项目中删除了±1.
5%并增加了版本差异.
1已更改105°C至125°C(在说明部分的最后一段)1AddedINA199CxtolastrowofAnaloginputsinAbsoluteMaximumRatingstable.
5ChangedINA199AxHBMvaluefrom±4000to±2000andchangedINA199B1,INA199B2,andINA199B3toINA199BxandINA199CxinsecondV(ESD)sectionofESDRatingstable5Changedmaximumspecificationfrom105to125inTArowofRecommendedOperatingConditionstable6ChangedallTA=–40°Cto105°CtoTA=–40°Cto125°CinElectricalCharacteristicstable7AddedversionCtolastrowofVCMparameterinElectricalCharacteristicstable7AddedversionsAandBtofirstGainerrorparameterrow,addedsecondrow7ChangeddeviceslistedintestconditionsofGBWparameterinElectricalCharacteristicstabletoINA199x1,INA199x2,andINA199x3,respectivelyforthethreerows.
7Changedmaximumspecificationfrom105to125inSpecifiedrangeparameterofElectricalCharacteristicstable7Changed105°Cto125°CinlastparagraphofOverviewsection12ChangedINA199A2andINA199B2toINA199x2andchangedINA199A2andINA199B2toINA199x2inlastparagraphofInputFilteringsection.
15ChangedlistedproductsintableofFigure2215ChangedversionBtoversionBandCinsecondparagraphofImprovingTransientRobustnesssection18ChangesfromRevisionE(December2015)toRevisionFPage在封装特性项目中添加了两种封装的引脚数量.
1已删除最后一项应用要点1已更改说明部分中的第二句)1ChangedAnaloginputsparameterinAbsoluteMaximumRatingstable.
5ChangedESDRatingstable:deletedbothMachinemodelrows,changedINA199BHBMspecification5ChangedElectricalCharacteristicstable:recombinedthetwoElectricalCharacteristicstablesintoone73INA199www.
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cnZHCS912G–APRIL2009–REVISEDFEBRUARY2017Copyright2009–2017,TexasInstrumentsIncorporatedAddedminimumspecificationtosecondrowofPowerSupply,VSparameterinElectricalCharacteristicstable7AddedθJAparameterbacktoElectricalCharacteristicstable7ChangesfromRevisionD(November2012)toRevisionEPage已添加ESD额定值表、热性能信息表、特性说明部分、器件功能模式、应用和实施部分、电源相关建议部分、布局部分、器件和文档支持部分以及机械、封装和可订购信息部分1ChangesfromRevisionC(August2012)toRevisionDPageChangedFrequencyResponse,BandwidthparameterinElectricalCharacteristicstable7UpdatedFigure21.
14UpdatedFigure22.
15ChangesfromRevisionB(February2010)toRevisionCPage已添加INA199Bx增益至第四个特性项目.
1AddedINA199BxdatatoProductFamilyTable.
4AddedINA199BxdatatoPackageInformationtable.
4AddedsiliconversionBdatatoInput,Common-ModeInputRangeparameterofElectricalCharacteristicstable7AddedQFNpackageinformationtoTemperatureRangesectionofElectricalCharacteristicstable.
7UpdatedFigure3.
8UpdatedFigure9.
9UpdatedFigure12.
9ChangedlastparagraphoftheSelectingRSsectiontocoverbothINA199AxandINA199Bxversions13ChangedInputFilteringsection.
14AddedImprovingTransientRobustnesssection.
18ChangesfromRevisionA(June2009)toRevisionBPageDeletedorderinginformationcontentfromPackage/Orderingtable4UpdatedDCKpinoutdrawing.
4ChangesfromOriginal(April2009)toRevisionAPageAddedorderingnumberandtransportmedia,quantitycolumnstoPackage/OrderingInformationtable44INA199ZHCS912G–APRIL2009–REVISEDFEBRUARY2017www.
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cnCopyright2009–2017,TexasInstrumentsIncorporated5DeviceComparisonTablePRODUCTGAINR3ANDR4R1ANDR2INA199x15020k1MINA199x210010k1MINA199x32005k1M6PinConfigurationandFunctionsDCKPackage6-PinSC70TopViewRSWPackage10-PinUQFNTopView(1)NCdenotesnointernalconnection.
ThesepinscanbeleftfloatingorconnectedtoanyvoltagebetweenGNDandV+.
PinFunctionsPINI/ODESCRIPTIONNAMESC70UQFNGND29AnalogGroundIN–54,5AnaloginputConnecttoloadsideofshuntresistor.
IN+42,3AnaloginputConnecttosupplysideofshuntresistor.
NC—1,7—Notinternallyconnected.
Leavefloatingorconnecttoground.
OUT610AnalogoutputOutputvoltageREF18AnaloginputReferencevoltage,0VtoV+V+36AnalogPowersupply,2.
7Vto26V5INA199www.
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cnZHCS912G–APRIL2009–REVISEDFEBRUARY2017Copyright2009–2017,TexasInstrumentsIncorporated(1)StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.
Thesearestressratingsonly,whichdonotimplyfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommendedOperatingConditions.
Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
(2)VIN+andVIN–arethevoltagesattheIN+andIN–pins,respectively.
(3)Inputvoltageatanypincanexceedthevoltageshownifthecurrentatthatpinislimitedto5mA.
7Specifications7.
1AbsoluteMaximumRatingsoveroperatingfree-airtemperaturerange(unlessotherwisenoted)(1)MINMAXUNITSupplyvoltage26VAnaloginputs,VIN+,VIN–(2)Differential(VIN+)–(VIN–)–2626VCommon-mode(3),INA199AxGND–0.
326Common-mode(3),INA199BxandINA199CxGND–0.
126REFinputGND–0.
3(V+)+0.
3VOutput(3)GND–0.
3(V+)+0.
3VInputcurrentIntoallpins(3)5mAOperatingtemperature–40125°CJunctiontemperature150°CStoragetemperature,Tstg–65150°C(1)JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess.
(2)JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess.
7.
2ESDRatingsVALUEUNITINA199A1,INA199A2,andINA199A3inDCKandRSWPackagesV(ESD)ElectrostaticdischargeHuman-bodymodel(HBM),perANSI/ESDA/JEDECJS-001(1)±2000VCharged-devicemodel(CDM),perJEDECspecificationJESD22-C101(2)±1000INA199BxandINA199CxinDCKandRSWPackagesV(ESD)ElectrostaticdischargeHuman-bodymodel(HBM),perANSI/ESDA/JEDECJS-001(1)±3500VCharged-devicemodel(CDM),perJEDECspecificationJESD22-C101(2)±10006INA199ZHCS912G–APRIL2009–REVISEDFEBRUARY2017www.
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cnCopyright2009–2017,TexasInstrumentsIncorporated7.
3RecommendedOperatingConditionsoveroperatingfree-airtemperaturerange(unlessotherwisenoted)MINNOMMAXUNITVCMCommon-modeinputvoltage12VVSOperatingsupplyvoltage(appliedtoV+)5VTAOperatingfree-airtemperature–40125°C(1)Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplicationreport.
7.
4ThermalInformationTHERMALMETRIC(1)INA199UNITDCK(SC70)RSW(UQFN)6PINS10PINSRθJAJunction-to-ambientthermalresistance227.
3107.
3°C/WRθJC(top)Junction-to-case(top)thermalresistance79.
556.
5°C/WRθJBJunction-to-boardthermalresistance72.
118.
7°C/WψJTJunction-to-topcharacterizationparameter3.
61.
1°C/WψJBJunction-to-boardcharacterizationparameter70.
418.
7°C/WRθJC(bot)Junction-to-case(bottom)thermalresistance——°C/W7INA199www.
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cnZHCS912G–APRIL2009–REVISEDFEBRUARY2017Copyright2009–2017,TexasInstrumentsIncorporated(1)RTI=Referred-to-input.
(2)SeeTypicalCharacteristiccurve,OutputVoltageSwingvsOutputCurrent(Figure6).
7.
5ElectricalCharacteristicsatTA=25°C,VS=5V,VIN+=12V,VSENSE=VIN+–VIN–,andVREF=VS/2(unlessotherwisenoted)PARAMETERTESTCONDITIONSMINTYPMAXUNITINPUTVCMCommon-modeinputrangeVersionA,TA=–40°Cto125°C–0.
326VVersionBandC,TA=–40°Cto125°C–0.
126CMRCommon-moderejectionVIN+=0Vto26V,VSENSE=0mV,TA=–40°Cto125°C100120dBVOSOffsetvoltage,RTI(1)VSENSE=0mV±5±150μVdVOS/dTVOSvstemperatureTA=–40°Cto125°C0.
10.
5μV/°CPSRPowersupplyrejectionVS=2.
7Vto18V,VIN+=18V,VSENSE=0mV±0.
1μV/VIBInputbiascurrentVSENSE=0mV28μAIOSInputoffsetcurrentVSENSE=0mV±0.
02μAOUTPUTGGainINA199x150V/VINA199x2100INA199x3200GainerrorVersionAandB,VSENSE=–5mVto5mV,TA=–40°Cto125°C±0.
03%±1.
5%VersionC,VSENSE=–5mVto5mV,TA=–40°Cto125°C±0.
03%±1%GainerrorvstemperatureTA=–40°Cto125°C310ppm/°CNonlinearityerrorVSENSE=–5mVto5mV±0.
01%MaximumcapacitiveloadNosustainedoscillation1nFVOLTAGEOUTPUT(2)SwingtoV+power-supplyrailRL=10kΩtoGND,TA=–40°Cto125°C(V+)–0.
05(V+)–0.
2VSwingtoGNDRL=10kΩtoGND,TA=–40°Cto125°C(VGND)+0.
005(VGND)+0.
05VFREQUENCYRESPONSEGBWBandwidthCLOAD=10pF,INA199x180kHzCLOAD=10pF,INA199x230CLOAD=10pF,INA199x314SRSlewrate0.
4V/μsNOISE,RTI(1)Voltagenoisedensity25nV/√HzPOWERSUPPLYVSOperatingvoltagerangeTA=–40°Cto125°C2.
726V–20°Cto85°C2.
526IQQuiescentcurrentVSENSE=0mV65100μAIQovertemperatureTA=–40°Cto125°C115μATEMPERATURERANGESpecifiedrange–40125°COperatingrange–40125°CθJAThermalresistanceSC70250°C/WUQFN808INA199ZHCS912G–APRIL2009–REVISEDFEBRUARY2017www.
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cnCopyright2009–2017,TexasInstrumentsIncorporated7.
6TypicalCharacteristicsperformancemeasuredwiththeINA199A3atTA=25°C,VS=5V,VIN+=12V,andVREF=VS/2(unlessotherwisenoted)Figure1.
OffsetVoltagevsTemperatureFigure2.
Common-ModeRejectionRatiovsTemperatureFigure3.
GainvsFrequencyFigure4.
Power-SupplyRejectionRatiovsFrequencyFigure5.
Common-ModeRejectionRatiovsFrequencyFigure6.
OutputVoltageSwingvsOutputCurrent9INA199www.
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cnZHCS912G–APRIL2009–REVISEDFEBRUARY2017Copyright2009–2017,TexasInstrumentsIncorporatedTypicalCharacteristics(continued)performancemeasuredwiththeINA199A3atTA=25°C,VS=5V,VIN+=12V,andVREF=VS/2(unlessotherwisenoted)VS=2.
5VFigure7.
OutputVoltageSwingvsOutputCurrentFigure8.
InputBiasCurrentvsCommon-ModeVoltageWithSupplyVoltage=5VFigure9.
InputBiasCurrentvsCommon-ModeVoltageWithSupplyVoltage=0V(Shutdown)Figure10.
InputBiasCurrentvsTemperatureFigure11.
QuiescentCurrentvsTemperatureFigure12.
Input-ReferredVoltageNoisevsFrequency10INA199ZHCS912G–APRIL2009–REVISEDFEBRUARY2017www.
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cnCopyright2009–2017,TexasInstrumentsIncorporatedTypicalCharacteristics(continued)performancemeasuredwiththeINA199A3atTA=25°C,VS=5V,VIN+=12V,andVREF=VS/2(unlessotherwisenoted)Figure13.
0.
1-Hzto10-HzVoltageNoise(Referred-to-Input)Figure14.
StepResponse(10-mVPPInputStep)Figure15.
Common-ModeVoltageTransientResponseFigure16.
InvertingDifferentialInputOverloadFigure17.
NoninvertingDifferentialInputOverloadFigure18.
Start-UpResponse11INA199www.
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cnZHCS912G–APRIL2009–REVISEDFEBRUARY2017Copyright2009–2017,TexasInstrumentsIncorporatedTypicalCharacteristics(continued)performancemeasuredwiththeINA199A3atTA=25°C,VS=5V,VIN+=12V,andVREF=VS/2(unlessotherwisenoted)Figure19.
BrownoutRecovery12INA199ZHCS912G–APRIL2009–REVISEDFEBRUARY2017www.
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cnCopyright2009–2017,TexasInstrumentsIncorporated8DetailedDescription8.
1OverviewTheINA199isa26-Vcommonmode,zero-drifttopology,current-sensingamplifierthatcanbeusedinbothlow-sideandhigh-sideconfigurations.
Thedeviceisaspecially-designed,current-sensingamplifierthatisabletoaccuratelymeasurevoltagesdevelopedacrossacurrent-sensingresistoroncommon-modevoltagesthatfarexceedthesupplyvoltagepoweringthedevice.
Currentcanbemeasuredoninputvoltagerailsashighas26Vandthedevicecanbepoweredfromsupplyvoltagesaslowas2.
7V.
Thezero-drifttopologyenableshigh-precisionmeasurementswithmaximuminputoffsetvoltagesaslowas150Vwithamaximumtemperaturecontributionof0.
5V/°Coverthefulltemperaturerangeof–40°Cto+125°C.
8.
2FunctionalBlockDiagram13INA199www.
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cnZHCS912G–APRIL2009–REVISEDFEBRUARY2017Copyright2009–2017,TexasInstrumentsIncorporated8.
3FeatureDescription8.
3.
1BasicConnectionsFigure20showsthebasicconnectionsfortheINA199.
Theinputpins,IN+andIN–,mustbeconnectedascloseaspossibletotheshuntresistortominimizeanyresistanceinserieswiththeshuntresistor.
Figure20.
TypicalApplicationPower-supplybypasscapacitorsarerequiredforstability.
Applicationswithnoisyorhigh-impedancepowersuppliesmayrequireadditionaldecouplingcapacitorstorejectpower-supplynoise.
Connectbypasscapacitorsclosetothedevicepins.
OntheRSWpackage,twopinsareprovidedforeachinput.
Thesepinsmustbetiedtogether(thatis,tieIN+toIN+andtieIN–toIN–).
8.
3.
2SelectingRSThezero-driftoffsetperformanceoftheINA199offersseveralbenefits.
Mostoften,theprimaryadvantageofthelowoffsetcharacteristicenableslowerfull-scaledropsacrosstheshunt.
Forexample,non-zero-driftcurrentshuntmonitorstypicallyrequireafull-scalerangeof100mV.
TheINA199seriesgivesequivalentaccuracyatafull-scalerangeontheorderof10mV.
Thisaccuracyreducesshuntdissipationbyanorderofmagnitudewithmanyadditionalbenefits.
Alternatively,thereareapplicationsthatmustmeasurecurrentoverawidedynamicrangethatcantakeadvantageofthelowoffsetonthelowendofthemeasurement.
Mostoften,theseapplicationscanusethelowergainof50or100toaccommodatelargershuntdropsontheupperendofthescale.
Forinstance,anINA199A1operatingona3.
3-Vsupplycaneasilyhandleafull-scaleshuntdropof60mV,withonly150μVofoffset.
14INA199ZHCS912G–APRIL2009–REVISEDFEBRUARY2017www.
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cnCopyright2009–2017,TexasInstrumentsIncorporated8.
4DeviceFunctionalModes8.
4.
1InputFilteringAnobviousandstraightforwardfilteringlocationisatthedeviceoutput.
However,thislocationnegatestheadvantageofthelowoutputimpedanceoftheinternalbuffer.
Theonlyotherfilteringoptionisatthedeviceinputpins.
Thislocation,though,doesrequireconsiderationofthe±30%toleranceoftheinternalresistances.
Figure21showsafilterplacedattheinputspins.
Figure21.
FilteratInputPinsTheadditionofexternalseriesresistance,however,createsanadditionalerrorinthemeasurementsothevalueoftheseseriesresistorsmustbekeptto10Ω(orlessifpossible)toreduceanyaffecttoaccuracy.
TheinternalbiasnetworkshowninFigure21presentattheinputpinscreatesamismatchininputbiascurrentswhenadifferentialvoltageisappliedbetweentheinputpins.
Ifadditionalexternalseriesfilterresistorsareaddedtothecircuit,themismatchinbiascurrentsresultsinamismatchofvoltagedropsacrossthefilterresistors.
Thismismatchcreatesadifferentialerrorvoltagethatsubtractsfromthevoltagedevelopedattheshuntresistor.
Thiserrorresultsinavoltageatthedeviceinputpinsthatisdifferentthanthevoltagedevelopedacrosstheshuntresistor.
Withouttheadditionalseriesresistance,themismatchininputbiascurrentshaslittleeffectondeviceoperation.
TheamountoferrortheseexternalfilterresistoraddtothemeasurementcanbecalculatedusingEquation2wherethegainerrorfactoriscalculatedusingEquation1.
Theamountofvarianceinthedifferentialvoltagepresentatthedeviceinputrelativetothevoltagedevelopedattheshuntresistorisbasedbothontheexternalseriesresistancevalueaswellastheinternalinputresistors,R3andR4(orRINTasshowninFigure21).
Thereductionoftheshuntvoltagereachingthedeviceinputpinsappearsasagainerrorwhencomparingtheoutputvoltagerelativetothevoltageacrosstheshuntresistor.
Afactorcanbecalculatedtodeterminetheamountofgainerrorthatisintroducedbytheadditionofexternalseriesresistance.
TheequationusedtocalculatetheexpecteddeviationfromtheshuntvoltagetowhatisseenatthedeviceinputpinsisgiveninEquation1:where:RINTistheinternalinputresistor(R3andR4).
RSistheexternalseriesresistance.
(1)15INA199www.
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cnZHCS912G–APRIL2009–REVISEDFEBRUARY2017Copyright2009–2017,TexasInstrumentsIncorporatedDeviceFunctionalModes(continued)Withtheadjustmentfactorequationincludingthedeviceinternalinputresistance,thisfactorvarieswitheachgainversion,aslistedinTable1.
EachindividualdevicegainerrorfactorislistedinTable2.
Table1.
InputResistancePRODUCTGAINRINT(kΩ)INA199x15020INA199x210010INA199x32005Table2.
DeviceGainErrorFactorPRODUCTSIMPLIFIEDGAINERRORFACTORINA199x1INA199x2INA199x3ThegainerrorthatcanbeexpectedfromtheadditionoftheexternalseriesresistorscanthenbecalculatedbasedonEquation2:(2)Forexample,usinganINA199x2andthecorrespondinggainerrorequationfromTable2,aseriesresistanceof10-Ωresultsinagainerrorfactorof0.
991.
ThecorrespondinggainerroristhencalculatedusingEquation2,resultinginagainerrorofapproximately0.
89%solelybecauseoftheexternal10-Ωseriesresistors.
UsinganINA199x1withthesame10-Ωseriesresistorresultsinagainerrorfactorof0.
991andagainerrorof0.
84%againsolelybecauseoftheseexternalresistors.
8.
4.
2ShuttingDowntheINA199SeriesAlthoughtheINA199seriesdoesnothaveashutdownpin,thelowpowerconsumptionofthedeviceallowstheoutputofalogicgateortransistorswitchtopowertheINA199.
ThisgateorswitchturnsonandturnsofftheINA199power-supplyquiescentcurrent.
However,incurrentshuntmonitoringapplications,thereisalsoaconcernforhowmuchcurrentisdrainedfromtheshuntcircuitinshutdownconditions.
EvaluatingthiscurrentdraininvolvesconsideringthesimplifiedschematicoftheINA199inshutdownmodeshowninFigure22.
NOTE:1-MpathsfromshuntinputstoreferenceandtheINA199outputs.
Figure22.
BasicCircuitforShuttingDowntheINA199WithaGroundedReference16INA199ZHCS912G–APRIL2009–REVISEDFEBRUARY2017www.
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cnCopyright2009–2017,TexasInstrumentsIncorporatedThereistypicallyslightlymorethan1-Mimpedance(fromthecombinationof1-Mfeedbackand5-kinputresistors)fromeachinputoftheINA199totheOUTpinandtotheREFpin.
Theamountofcurrentflowingthroughthesepinsdependsontherespectiveultimateconnection.
Forexample,iftheREFpinisgrounded,thecalculationoftheeffectofthe1-Mimpedancefromtheshunttogroundisstraightforward.
However,ifthereferenceoroperationalamplifierispoweredwhentheINA199isshutdown,thecalculationisdirect;insteadofassuming1-Mtoground,however,assume1-Mtothereferencevoltage.
Ifthereferenceoroperationalamplifierisalsoshutdown,someknowledgeofthereferenceoroperationalamplifieroutputimpedanceundershutdownconditionsisrequired.
Forinstance,ifthereferencesourcefunctionsasanopencircuitwhennotpowered,littleornocurrentflowsthroughthe1-Mpath.
Regardingthe1-Mpathtotheoutputpin,theoutputstageofadisabledINA199doesconstituteagoodpathtoground.
Consequently,thiscurrentisdirectlyproportionaltoashuntcommon-modevoltageimpressedacrossa1-Mresistor.
NOTEWhenthedeviceispoweredup,thereisanadditional,nearlyconstant,andwell-matched25μAthatflowsineachoftheinputsaslongastheshuntcommon-modevoltageis3Vorhigher.
Below2-Vcommon-mode,theonlycurrenteffectsaretheresultofthe1-Mresistors.
8.
4.
3REFInputImpedanceEffectsAswithanydifferenceamplifier,theINA199seriescommon-moderejectionratioisaffectedbyanyimpedancepresentattheREFinput.
ThisconcernisnotaproblemwhentheREFpinisconnecteddirectlytomostreferencesorpowersupplies.
Whenusingresistivedividersfromthepowersupplyorareferencevoltage,theREFpinmustbebufferedbyanoperationalamplifier.
InsystemswheretheINA199outputcanbesenseddifferentially,suchasbyadifferentialinputanalog-to-digitalconverter(ADC)orbyusingtwoseparateADCinputs,theeffectsofexternalimpedanceontheREFinputcanbecancelled.
Figure23depictsamethodoftakingtheoutputfromtheINA199byusingtheREFpinasareference.
Figure23.
SensingtheINA199toCancelEffectsofImpedanceontheREFInput8.
4.
4UsingtheINA199WithCommon-ModeTransientsAbove26VWithasmallamountofadditionalcircuitry,theINA199seriescanbeusedincircuitssubjecttotransientshigherthan26V,suchasautomotiveapplications.
UseonlyZenerdiodeorZener-typetransientabsorbers(sometimesreferredtoastranszorbs);anyothertypeoftransientabsorberhasanunacceptabletimedelay.
Startbyaddingapairofresistors(seeFigure24)asaworkingimpedancefortheZener.
Keepingtheseresistorsassmallaspossibleispreferable,mostoftenapproximately10.
Largervaluescanbeusedwithaneffectongainas17INA199www.
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cnZHCS912G–APRIL2009–REVISEDFEBRUARY2017Copyright2009–2017,TexasInstrumentsIncorporateddiscussedintheInputFilteringsection.
Becausethiscircuitlimitsonlyshort-termtransients,manyapplicationsaresatisfiedwitha10-resistoralongwithconventionalZenerdiodesofthelowestpowerratingthatcanbefound.
Thiscombinationusestheleastamountofboardspace.
ThesediodescanbefoundinpackagesassmallasSOT-523orSOD-523.
SeeTIDA-00302TransientRobustnessforCurrentShuntMonitorDesignGuide,TIDU473formoreinformationontransientrobustnessandcurrent-shuntmonitorinputprotection.
Figure24.
INA199TransientProtectionUsingDualZenerDiodesIntheeventthatlow-powerzenersdonothavesufficienttransientabsorptioncapabilityandahigherpowertranszorbmustbeused,themostpackage-efficientsolutiontheninvolvesusingasingletranszorbandback-to-backdiodesbetweenthedeviceinputs.
Themostspace-efficientsolutionsaredualseries-connecteddiodesinasingleSOT-523orSOD-523package.
ThismethodisshowninFigure25.
Ineitheroftheseexamples,thetotalboardarearequiredbytheINA199withallprotectivecomponentsislessthanthatofanSO-8package,andonlyslightlygreaterthanthatofanMSOP-8package.
Figure25.
INA199TransientProtectionUsingaSingleTranszorbandInputClamps18INA199ZHCS912G–APRIL2009–REVISEDFEBRUARY2017www.
ti.
com.
cnCopyright2009–2017,TexasInstrumentsIncorporated8.
4.
5ImprovingTransientRobustnessApplicationsinvolvinglargeinputtransientswithexcessivedV/dtabove2kVpermicrosecondpresentatthedeviceinputpinscancausedamagetotheinternalESDstructuresonversionAdevices.
ThispotentialdamageisaresultoftheinternallatchingoftheESDstructuretogroundwhenthistransientoccursattheinput.
Withsignificantcurrentavailableinmostcurrent-sensingapplications,thelargecurrentflowingthroughtheinputtransient-triggered,ground-shortedESDstructurequicklyresultsindamagetothesilicon.
Externalfilteringcanbeusedtoattenuatethetransientsignalpriortoreachingtheinputstoavoidthelatchingcondition.
Takecaretoensurethatexternalseriesinputresistancedoesnotsignificantlyaffectgainerroraccuracy.
Foraccuracypurposes,keeptheresistanceunder10Ωifpossible.
Ferritebeadsarerecommendedforthisfilterbecauseoftheirinherentlylowdcohmicvalue.
Ferritebeadswithlessthan10Ωofresistanceatdcandover600Ωofresistanceat100MHzto200MHzarerecommended.
Therecommendedcapacitorvaluesforthisfilterarebetween0.
01Fand0.
1Ftoensureadequateattenuationinthehigh-frequencyregion.
ThisprotectionschemeisshowninFigure26.
Again,seeTIDA-00302TransientRobustnessforCurrentShuntMonitorDesignGuide,TIDU473formoreinformationontransientrobustnessandcurrent-shuntmonitorinputprotection.
Figure26.
TransientProtectionTominimizethecostofaddingtheseexternalcomponentstoprotectthedeviceinapplicationswherelargetransientsignalsmaybepresent,versionBandCdevicesarenowavailablewithnewESDstructuresthatarenotsusceptibletothislatchingcondition.
VersionBandCdevicesareincapableofsustainingthesedamage-causinglatchedconditionssothesedevicesdonothavethesamesensitivitytothetransientsthattheversionAdeviceshave,thusmakingtheversionBandCdevicesabetterfitfortheseapplications.
19INA199www.
ti.
com.
cnZHCS912G–APRIL2009–REVISEDFEBRUARY2017Copyright2009–2017,TexasInstrumentsIncorporated9ApplicationandImplementationNOTEInformationinthefollowingapplicationssectionsisnotpartoftheTIcomponentspecification,andTIdoesnotwarrantitsaccuracyorcompleteness.
TI'scustomersareresponsiblefordeterminingsuitabilityofcomponentsfortheirpurposes.
Customersshouldvalidateandtesttheirdesignimplementationtoconfirmsystemfunctionality.
9.
1ApplicationInformationTheINA199measuresthevoltagedevelopedacrossacurrent-sensingresistorwhencurrentpassesthroughit.
Theabilitytodrivethereferencepintoadjustthefunctionalityoftheoutputsignaloffersmultipleconfigurations,asdiscussedthroughoutthissection.
9.
2TypicalApplications9.
2.
1UnidirectionalOperationFigure27.
UnidirectionalApplicationSchematic9.
2.
1.
1DesignRequirementsThedevicecanbeconfiguredtomonitorcurrentflowinginonedirection(unidirectional)orinbothdirections(bidirectional)dependingonhowtheREFpinisconfigured.
ThemostcommoncaseisunidirectionalwheretheoutputissettogroundwhennocurrentisflowingbyconnectingtheREFpintoground,asshowninFigure27.
Whentheinputsignalincreases,theoutputvoltageattheOUTpinincreases.
9.
2.
1.
2DetailedDesignProcedureThelinearrangeoftheoutputstageislimitedinhowclosetheoutputvoltagecanapproachgroundunderzeroinputconditions.
Inunidirectionalapplicationswheremeasuringverylowinputcurrentsisdesirable,biastheREFpintoaconvenientvalueabove50mVtogettheoutputintothelinearrangeofthedevice.
Tolimitcommon-moderejectionerrors,TIrecommendsbufferingthereferencevoltageconnectedtotheREFpin.
Alessfrequently-usedoutputbiasingmethodistoconnecttheREFpintothesupplyvoltage,V+.
Thismethodresultsintheoutputvoltagesaturatingat200mVbelowthesupplyvoltagewhennodifferentialinputsignalispresent.
ThismethodissimilartotheoutputsaturatedlowconditionwithnoinputsignalwhentheREFpinisconnectedtoground.
TheoutputvoltageinthisconfigurationonlyrespondstonegativecurrentsthatdevelopnegativedifferentialinputvoltagerelativetothedeviceIN–pin.
Undertheseconditions,whenthedifferentialinputsignalincreasesnegatively,theoutputvoltagemovesdownwardfromthesaturatedsupplyvoltage.
ThevoltageappliedtotheREFpinmustnotexceedthedevicesupplyvoltage.
20INA199ZHCS912G–APRIL2009–REVISEDFEBRUARY2017www.
ti.
com.
cnCopyright2009–2017,TexasInstrumentsIncorporatedTypicalApplications(continued)9.
2.
1.
3ApplicationCurveAnexampleoutputresponseofaunidirectionalconfigurationisshowninFigure28.
WiththeREFpinconnecteddirectlytoground,theoutputvoltageisbiasedtothiszerooutputlevel.
Theoutputrisesabovethereferencevoltageforpositivedifferentialinputsignalsbutcannotfallbelowthereferencevoltagefornegativedifferentialinputsignalsbecauseofthegroundedreferencevoltage.
Figure28.
UnidirectionalApplicationOutputResponse9.
2.
2BidirectionalOperationFigure29.
BidirectionalApplicationSchematic9.
2.
2.
1DesignRequirementsThedeviceisabidirectional,current-senseamplifiercapableofmeasuringcurrentsthrougharesistiveshuntintwodirections.
Thisbidirectionalmonitoringiscommoninapplicationsthatincludecharginganddischargingoperationswherethecurrentflow-throughresistorcanchangedirections.
21INA199www.
ti.
com.
cnZHCS912G–APRIL2009–REVISEDFEBRUARY2017Copyright2009–2017,TexasInstrumentsIncorporatedTypicalApplications(continued)9.
2.
2.
2DetailedDesignProcedureTheabilitytomeasurethiscurrentflowinginbothdirectionsisenabledbyapplyingavoltagetotheREFpin;seeFigure29.
ThevoltageappliedtoREF(VREF)setstheoutputstatethatcorrespondstothezero-inputlevelstate.
TheoutputthenrespondsbyincreasingaboveVREFforpositivedifferentialsignals(relativetotheIN–pin)andrespondsbydecreasingbelowVREFfornegativedifferentialsignals.
ThisreferencevoltageappliedtotheREFpincanbesetanywherebetween0VtoV+.
Forbidirectionalapplications,VREFistypicallysetatmid-scaleforequalsignalrangeinbothcurrentdirections.
Insomecases,however,VREFissetatavoltageotherthanmid-scalewhenthebidirectionalcurrentandcorrespondingoutputsignaldonotneedtobesymmetrical.
9.
2.
2.
3ApplicationCurveFigure30.
BidirectionalApplicationOutputResponse22INA199ZHCS912G–APRIL2009–REVISEDFEBRUARY2017www.
ti.
com.
cn版权2009–2017,TexasInstrumentsIncorporated10PowerSupplyRecommendationsTheinputcircuitryoftheINA199canaccuratelymeasurebeyonditspower-supplyvoltage,V+.
Forexample,theV+powersupplycanbe5V,whereastheloadpower-supplyvoltagecanbeashighas26V.
However,theoutputvoltagerangeoftheOUTpinislimitedbythevoltagesonthepower-supplypin.
Also,theINA199canwithstandthefullinputsignalrangeupto26-Vrangeintheinputpins,regardlessofwhetherthedevicehaspowerappliedornot.
11Layout11.
1LayoutGuidelinesConnecttheinputpinstothesensingresistorusingakelvinor4-wireconnection.
Thisconnectiontechniqueensuresthatonlythecurrent-sensingresistorimpedanceisdetectedbetweentheinputpins.
Poorroutingofthecurrent-sensingresistorcommonlyresultsinadditionalresistancepresentbetweentheinputpins.
Giventheverylowohmicvalueofthecurrentresistor,anyadditionalhigh-currentcarryingimpedancecancausesignificantmeasurementerrors.
Placethepower-supplybypasscapacitorascloseaspossibletothesupplyandgroundpins.
TIrecommendsusingabypasscapacitorwithavalueof0.
1μF.
Additionaldecouplingcapacitancecanbeaddedtocompensatefornoisyorhigh-impedancepowersupplies.
11.
2LayoutExampleFigure31.
RecommendedLayout23INA199www.
ti.
com.
cnZHCS912G–APRIL2009–REVISEDFEBRUARY2017版权2009–2017,TexasInstrumentsIncorporated12器器件件和和文文档档支支持持12.
1文文档档支支持持12.
1.
1相相关关文文档档相关文档请参阅以下部分:《INA199A1-A3EVM用户指南》《TIDA-00302电流分流监控器的瞬态稳定性》12.
2接接收收文文档档更更新新通通知知如需接收文档更新通知,请访问www.
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com.
cn网站上的器件产品文件夹.
点击右上角的提醒我(Alertme)注册后,即可每周定期收到已更改的产品信息.
有关更改的详细信息,请查阅已修订文档中包含的修订历史记录.
12.
3社社区区资资源源ThefollowinglinksconnecttoTIcommunityresources.
Linkedcontentsareprovided"ASIS"bytherespectivecontributors.
TheydonotconstituteTIspecificationsanddonotnecessarilyreflectTI'sviews;seeTI'sTermsofUse.
TIE2EOnlineCommunityTI'sEngineer-to-Engineer(E2E)Community.
Createdtofostercollaborationamongengineers.
Ate2e.
ti.
com,youcanaskquestions,shareknowledge,exploreideasandhelpsolveproblemswithfellowengineers.
DesignSupportTI'sDesignSupportQuicklyfindhelpfulE2Eforumsalongwithdesignsupporttoolsandcontactinformationfortechnicalsupport.
12.
4商商标标E2EisatrademarkofTexasInstruments.
Allothertrademarksarethepropertyoftheirrespectiveowners.
12.
5静静电电放放电电警警告告ESD可能会损坏该集成电路.
德州仪器(TI)建议通过适当的预防措施处理所有集成电路.
如果不遵守正确的处理措施和安装程序,可能会损坏集成电路.
ESD的损坏小至导致微小的性能降级,大至整个器件故障.
精密的集成电路可能更容易受到损坏,这是因为非常细微的参数更改都可能会导致器件与其发布的规格不相符.
12.
6GlossarySLYZ022—TIGlossary.
Thisglossarylistsandexplainsterms,acronyms,anddefinitions.
13机机械械、、封封装装和和可可订订购购信信息息以下页中包括机械、封装和可订购信息.
这些信息是针对指定器件可提供的最新数据.
这些数据会在无通知且不对本文档进行修订的情况下发生改变.
欲获得该数据表的浏览器版本,请查阅左侧的导航栏.
PACKAGEOPTIONADDENDUMwww.
ti.
com17-Mar-2017Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Lead/BallFinish(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesINA199A1DCKRACTIVESC70DCK63000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to125OBGINA199A1DCKTACTIVESC70DCK6250Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to125OBGINA199A1RSWRACTIVEUQFNRSW103000Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to125NSJINA199A1RSWTACTIVEUQFNRSW10250Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to125NSJINA199A2DCKRACTIVESC70DCK63000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to125OBHINA199A2DCKTACTIVESC70DCK6250Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to125OBHINA199A2RSWRACTIVEUQFNRSW103000Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to125NTJINA199A2RSWTACTIVEUQFNRSW10250Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to125NTJINA199A3DCKRACTIVESC70DCK63000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to125OBIINA199A3DCKTACTIVESC70DCK6250Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to125OBIINA199A3RSWRACTIVEUQFNRSW103000Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to125NUJINA199A3RSWTACTIVEUQFNRSW10250Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to125NUJINA199B1DCKRACTIVESC70DCK63000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to125SEBINA199B1DCKTACTIVESC70DCK6250Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to125SEBINA199B1RSWRACTIVEUQFNRSW103000Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to125SHVINA199B1RSWTACTIVEUQFNRSW10250Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to125SHVINA199B2DCKRACTIVESC70DCK63000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to125SEGPACKAGEOPTIONADDENDUMwww.
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com17-Mar-2017Addendum-Page2OrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Lead/BallFinish(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesINA199B2DCKTACTIVESC70DCK6250Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to125SEGINA199B2RSWRACTIVEUQFNRSW103000Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to125SHWINA199B2RSWTACTIVEUQFNRSW10250Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to125SHWINA199B3DCKRACTIVESC70DCK63000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to125SHEINA199B3DCKTACTIVESC70DCK6250Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to125SHEINA199B3RSWRACTIVEUQFNRSW103000Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to125SHXINA199B3RSWTACTIVEUQFNRSW10250Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to125SHXINA199C1DCKRACTIVESC70DCK63000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to12516LINA199C1DCKTACTIVESC70DCK6250Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to12516LINA199C1RSWRACTIVEUQFNRSW103000Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to12516OINA199C1RSWTACTIVEUQFNRSW10250Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to12516OINA199C2DCKRACTIVESC70DCK63000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to12516MINA199C2DCKTACTIVESC70DCK6250Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to12516MINA199C2RSWRACTIVEUQFNRSW103000Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to12516PINA199C2RSWTACTIVEUQFNRSW10250Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to12516PINA199C3DCKRACTIVESC70DCK63000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to12516NINA199C3DCKTACTIVESC70DCK6250Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to12516NINA199C3RSWRACTIVEUQFNRSW103000Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to12516QPACKAGEOPTIONADDENDUMwww.
ti.
com17-Mar-2017Addendum-Page3OrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Lead/BallFinish(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesINA199C3RSWTACTIVEUQFNRSW10250Green(RoHS&noSb/Br)CUNIPDAULevel-1-260C-UNLIM-40to12516Q(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheckhttp://www.
ti.
com/productcontentforthelatestavailabilityinformationandadditionalproductcontentdetails.
TBD:ThePb-Free/Greenconversionplanhasnotbeendefined.
Pb-Free(RoHS):TI'sterms"Lead-Free"or"Pb-Free"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirementsforall6substances,includingtherequirementthatleadnotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses.
Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieandpackage,or2)lead-baseddieadhesiveusedbetweenthedieandleadframe.
ThecomponentisotherwiseconsideredPb-Free(RoHScompatible)asdefinedabove.
Green(RoHS&noSb/Br):TIdefines"Green"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflameretardants(BrorSbdonotexceed0.
1%byweightinhomogeneousmaterial)(3)MSL,PeakTemp.
-TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclassifications,andpeaksoldertemperature.
(4)Theremaybeadditionalmarking,whichrelatestothelogo,thelottracecodeinformation,ortheenvironmentalcategoryonthedevice.
(5)MultipleDeviceMarkingswillbeinsideparentheses.
OnlyoneDeviceMarkingcontainedinparenthesesandseparatedbya"~"willappearonadevice.
IfalineisindentedthenitisacontinuationofthepreviouslineandthetwocombinedrepresenttheentireDeviceMarkingforthatdevice.
(6)Lead/BallFinish-OrderableDevicesmayhavemultiplematerialfinishoptions.
Finishoptionsareseparatedbyaverticalruledline.
Lead/BallFinishvaluesmaywraptotwolinesifthefinishvalueexceedsthemaximumcolumnwidth.
ImportantInformationandDisclaimer:TheinformationprovidedonthispagerepresentsTI'sknowledgeandbeliefasofthedatethatitisprovided.
TIbasesitsknowledgeandbeliefoninformationprovidedbythirdparties,andmakesnorepresentationorwarrantyastotheaccuracyofsuchinformation.
Effortsareunderwaytobetterintegrateinformationfromthirdparties.
TIhastakenandcontinuestotakereasonablestepstoproviderepresentativeandaccurateinformationbutmaynothaveconducteddestructivetestingorchemicalanalysisonincomingmaterialsandchemicals.
TIandTIsuppliersconsidercertaininformationtobeproprietary,andthusCASnumbersandotherlimitedinformationmaynotbeavailableforrelease.
InnoeventshallTI'sliabilityarisingoutofsuchinformationexceedthetotalpurchasepriceoftheTIpart(s)atissueinthisdocumentsoldbyTItoCustomeronanannualbasis.
TAPEANDREELINFORMATION*AlldimensionsarenominalDevicePackageTypePackageDrawingPinsSPQReelDiameter(mm)ReelWidthW1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W(mm)Pin1QuadrantINA199A1DCKRSC70DCK63000179.
08.
42.
22.
51.
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08.
0Q3INA199A1DCKRSC70DCK63000180.
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08.
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0Q3PACKAGEMATERIALSINFORMATIONwww.
ti.
com3-Aug-2017PackMaterials-Page1DevicePackageTypePackageDrawingPinsSPQReelDiameter(mm)ReelWidthW1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W(mm)Pin1QuadrantINA199A3DCKTSC70DCK6250179.
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42.
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0Q3INA199A3RSWRUQFNRSW103000179.
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0Q1INA199C2DCKRSC70DCK63000178.
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0PACKAGEMATERIALSINFORMATIONwww.
ti.
com3-Aug-2017PackMaterials-Page4IMPORTANTNOTICE重重要要声声明明德州仪器(TI)公司有权按照最新发布的JESD46对其半导体产品和服务进行纠正、增强、改进和其他修改,并不再按最新发布的JESD48提供任何产品和服务.
买方在下订单前应获取最新的相关信息,并验证这些信息是否完整且是最新的.
TI公布的半导体产品销售条款(http://www.
ti.
com/sc/docs/stdterms.
htm)适用于TI已认证和批准上市的已封装集成电路产品的销售.
另有其他条款可能适用于其他类型TI产品及服务的使用或销售.
复制TI数据表上TI信息的重要部分时,不得变更该等信息,且必须随附所有相关保证、条件、限制和通知,否则不得复制.
TI对该等复制文件不承担任何责任.
第三方信息可能受到其它限制条件的制约.
在转售TI产品或服务时,如果存在对产品或服务参数的虚假陈述,则会失去相关TI产品或服务的明示或暗示保证,且构成不公平的、欺诈性商业行为.
TI对此类虚假陈述不承担任何责任.
买方和在系统中整合TI产品的其他开发人员(总称"设计人员")理解并同意,设计人员在设计应用时应自行实施独立的分析、评价和判断,且应全权负责并确保应用的安全性,及设计人员的应用(包括应用中使用的所有TI产品)应符合所有适用的法律法规及其他相关要求.
设计人员就自己设计的应用声明,其具备制订和实施下列保障措施所需的一切必要专业知识,能够(1)预见故障的危险后果,(2)监视故障及其后果,以及(3)降低可能导致危险的故障几率并采取适当措施.
设计人员同意,在使用或分发包含TI产品的任何应用前,将彻底测试该等应用和该等应用中所用TI产品的功能.
TI提供技术、应用或其他设计建议、质量特点、可靠性数据或其他服务或信息,包括但不限于与评估模块有关的参考设计和材料(总称"TI资源"),旨在帮助设计人员开发整合了TI产品的应用,如果设计人员(个人,或如果是代表公司,则为设计人员的公司)以任何方式下载、访问或使用任何特定的TI资源,即表示其同意仅为该等目标,按照本通知的条款使用任何特定TI资源.
TI所提供的TI资源,并未扩大或以其他方式修改TI对TI产品的公开适用的质保及质保免责声明;也未导致TI承担任何额外的义务或责任.
TI有权对其TI资源进行纠正、增强、改进和其他修改.
除特定TI资源的公开文档中明确列出的测试外,TI未进行任何其他测试.
设计人员只有在开发包含该等TI资源所列TI产品的应用时,才被授权使用、复制和修改任何相关单项TI资源.
但并未依据禁止反言原则或其他法理授予您任何TI知识产权的任何其他明示或默示的许可,也未授予您TI或第三方的任何技术或知识产权的许可,该等产权包括但不限于任何专利权、版权、屏蔽作品权或与使用TI产品或服务的任何整合、机器制作、流程相关的其他知识产权.
涉及或参考了第三方产品或服务的信息不构成使用此类产品或服务的许可或与其相关的保证或认可.
使用TI资源可能需要您向第三方获得对该等第三方专利或其他知识产权的许可.
TI资源系"按原样"提供.
TI兹免除对资源及其使用作出所有其他明确或默认的保证或陈述,包括但不限于对准确性或完整性、产权保证、无屡发故障保证,以及适销性、适合特定用途和不侵犯任何第三方知识产权的任何默认保证.
TI不负责任何申索,包括但不限于因组合产品所致或与之有关的申索,也不为或对设计人员进行辩护或赔偿,即使该等产品组合已列于TI资源或其他地方.
对因TI资源或其使用引起或与之有关的任何实际的、直接的、特殊的、附带的、间接的、惩罚性的、偶发的、从属或惩戒性损害赔偿,不管TI是否获悉可能会产生上述损害赔偿,TI概不负责.
除TI已明确指出特定产品已达到特定行业标准(例如ISO/TS16949和ISO26262)的要求外,TI不对未达到任何该等行业标准要求而承担任何责任.
如果TI明确宣称产品有助于功能安全或符合行业功能安全标准,则该等产品旨在帮助客户设计和创作自己的符合相关功能安全标准和要求的应用.
在应用内使用产品的行为本身不会配有任何安全特性.
设计人员必须确保遵守适用于其应用的相关安全要求和标准.
设计人员不可将任何TI产品用于关乎性命的医疗设备,除非已由各方获得授权的管理人员签署专门的合同对此类应用专门作出规定.
关乎性命的医疗设备是指出现故障会导致严重身体伤害或死亡的医疗设备(例如生命保障设备、心脏起搏器、心脏除颤器、人工心脏泵、神经刺激器以及植入设备).
此类设备包括但不限于,美国食品药品监督管理局认定为III类设备的设备,以及在美国以外的其他国家或地区认定为同等类别设备的所有医疗设备.
TI可能明确指定某些产品具备某些特定资格(例如Q100、军用级或增强型产品).
设计人员同意,其具备一切必要专业知识,可以为自己的应用选择适合的产品,并且正确选择产品的风险由设计人员承担.
设计人员单方面负责遵守与该等选择有关的所有法律或监管要求.
设计人员同意向TI及其代表全额赔偿因其不遵守本通知条款和条件而引起的任何损害、费用、损失和/或责任.
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