DSwww67194..com

VishaySiliconixSi1317DLNewProductDocumentNumber:67194S10-2764-Rev.
A,29-Nov-10www.
vishay.
com1P-Channel20V(D-S)MOSFETFEATURESHalogen-freeAccordingtoIEC61249-2-21DefinitionTrenchFETPowerMOSFET100%RgTestedComplianttoRoHSDirective2002/95/ECAPPLICATIONSLoadSwitchDC/DCConvertersPRODUCTSUMMARYVDS(V)RDS(on)()ID(A)cQg(Typ.
)-200.
150atVGS=-4.
5V-1.
44.
3nC0.
192atVGS=-2.
5V-1.
30.
270atVGS=-1.
8V-1.
1Notes:a.
Surfacemountedon1"x1"FR4board.
b.
t=10s.
c.
BasedonTC=25°C.
ABSOLUTEMAXIMUMRATINGS(TA=25°C,unlessotherwisenoted)ParameterSymbolLimitUnitDrain-SourceVoltageVDS-20VGate-SourceVoltageVGS±8ContinuousDrainCurrent(TJ=150°C)TC=25°CID-1.
4ATC=70°C-1.
1TA=25°C-1.
4a,bTA=70°C-1.
1a,bPulsedDrainCurrentIDM-6ContinuousSource-DrainDiodeCurrentTC=25°CIS-0.
4TA=25°C-0.
3MaximumPowerDissipationTC=25°CPD0.
5WTC=70°C0.
3TA=25°C0.
4a,bTA=70°C0.
3a,bOperatingJunctionandStorageTemperatureRangeTJ,Tstg-50to150°CSolderingRecommendations(PeakTemperature)260OrderingInformation:Si1317DL-T1-GE3(Lead(Pb)-freeandHalogen-free)TopViewSi1317DL(LK)**MarkingCodeSOT-323SC-70(3-LEADS)123GSDSGDP-ChannelMOSFETwww.
vishay.
com2DocumentNumber:67194S10-2764-Rev.
A,29-Nov-10VishaySiliconixSi1317DLNewProductNotes:a.
Surfacemountedon1"x1"FR4board.
b.
Maximumundersteadystateconditionsis360°C/W.
Notes:a.
Pulsetest;pulsewidth300s,dutycycle2%.
b.
Guaranteedbydesign,notsubjecttoproductiontesting.
Stressesbeyondthoselistedunder"AbsoluteMaximumRatings"maycausepermanentdamagetothedevice.
Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedintheoperationalsectionsofthespecificationsisnotimplied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectdevicereliability.
THERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitMaximumJunction-to-Ambienta,bt10sRthJA250300°C/WMaximumJunction-to-Foot(Drain)SteadyStateRthJF225270SPECIFICATIONS(TJ=25°C,unlessotherwisenoted)ParameterSymbolTestConditionsMin.
Typ.
Max.
UnitStaticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=-250A-20VVDSTemperatureCoefficientVDS/TJID=-250A-14mV/°CVGS(th)TemperatureCoefficientVGS(th)/TJ2.
4Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=-250A-0.
45-0.
8VGate-SourceLeakageIGSSVDS=0V,VGS=±8V±100nAZeroGateVoltageDrainCurrentIDSSVDS=-20V,VGS=0V-1AVDS=-20V,VGS=0V,TJ=55°C-10On-StateDrainCurrentaID(on)VDS-5V,VGS=-4.
5V-2ADrain-SourceOn-StateResistanceaRDS(on)VGS=-4.
5V,ID=-1.
4A0.
1250.
150VGS=-2.
5V,ID=-1.
2A0.
1600.
192VGS=-1.
8V,ID=-0.
3A0.
1800.
270ForwardTransconductanceagfsVDS=-5V,ID=-1.
4A5SDynamicbInputCapacitanceCissVDS=-10V,VGS=0V,f=1MHz272pFOutputCapacitanceCoss55ReverseTransferCapacitanceCrss44TotalGateChargeQgVDS=-10V,VGS=-4.
5V,ID=-1.
4A4.
36.
5nCVDS=-10V,VGS=-2.
5V,ID=-1.
4A2.
74.
1Gate-SourceChargeQgs0.
7Gate-DrainChargeQgd1.
0GateResistanceRgf=1MHz1.
4714Turn-OnDelayTimetd(on)VDD=-10V,RL=9.
1ID-1.
1A,VGEN=-4.
5V,Rg=11220nsRiseTimetr2030Turn-OffDelayTimetd(off)2335FallTimetf918Turn-OnDelayTimetd(on)VDD=-10V,RL=9.
1ID-1.
1A,VGEN=-8V,Rg=1510RiseTimetr1020Turn-OffDelayTimetd(off)1827FallTimetf714Drain-SourceBodyDiodeCharacteristicsContinuousSource-DrainDiodeCurrentISTC=25°C-0.
4APulseDiodeForwardCurrentaISM-6BodyDiodeVoltageVSDIF=-0.
7A-0.
8-1.
2VBodyDiodeReverseRecoveryTimetrrIF=-0.
7A,dI/dt=100A/s,TJ=25°C1827nsBodyDiodeReverseRecoveryChargeQrr714nCReverseRecoveryFallTimeta7nsReverseRecoveryRiseTimetb11DocumentNumber:67194S10-2764-Rev.
A,29-Nov-10www.
vishay.
com3VishaySiliconixSi1317DLNewProductTYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)OutputCharacteristicsOn-Resistancevs.
DrainCurrentGateCharge0.
01.
53.
04.
56.
00.
00.
51.
01.
52.
0VGS=5Vthru2.
5VVGS=2VVGS=1.
5VVGS=1.
8VVGS=1VVDS-Drain-to-SourceVoltage(V)ID-DrainCurrent(A)0.
060.
100.
140.
180.
220.
260.
01.
53.
04.
56.
0VGS=1.
8VVGS=2.
5VVGS=4.
5VRDS(on)-On-Resistance(Ω)ID-DrainCurrent(A)0.
00.
91.
82.
73.
64.
5012345ID=1.
4AVDS=10VVDS=16VVDS=5VQg-TotalGateCharge(nC)VGS-Gate-to-SourceVoltage(V)TransferCharacteristicsCapacitanceOn-Resistancevs.
JunctionTemperature0.
00.
20.
40.
60.
81.
00.
00.
30.
60.
91.
21.
5TC=125°CTC=25°CTC=-55°CVGS-Gate-to-SourceVoltage(V)ID-DrainCurrent(A)Crss015030045060005101520CissCossVDS-Drain-to-SourceVoltage(V)C-Capacitance(pF)0.
70.
80.
91.
01.
11.
21.
31.
41.
5-50-250255075100125150ID=1.
4AVGS=4.
5VVGS=2.
5VTJ-JunctionTemperature(°C)(Normalized)RDS(on)-On-Resistancewww.
vishay.
com4DocumentNumber:67194S10-2764-Rev.
A,29-Nov-10VishaySiliconixSi1317DLNewProductTYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)Source-DrainDiodeForwardVoltageThresholdVoltage0.
00.
30.
60.
91.
21.
510.
110TJ=25°CTJ=150°CVSD-Source-to-DrainVoltage(V)IS-SourceCurrent(A)0.
250.
350.
450.
550.
650.
75-50-250255075100125150ID=250μAVGS(th)(V)TJ-Temperature(°C)On-Resistancevs.
Gate-to-SourceVoltageSinglePulsePower,Junction-to-Ambient0.
000.
080.
160.
240.
3212345TJ=25°CTJ=125°CID=1.
4ARDS(on)-On-Resistance(Ω)VGS-Gate-to-SourceVoltage(V)02468100.
0010.
010.
1110100Time(s)Power(W)SafeOperatingArea,Junction-to-Ambient100.
10.
11101TA=25°CSinglePulse1ms0.
011s10s,DC100100μsLimitedbyRDS(on)*10ms100msBVDSSLimitedVDS-Drain-to-SourceVoltage(V)*VGS>minimumVGSatwhichRDS(on)isspecifiedID-DrainCurrent(A)DocumentNumber:67194S10-2764-Rev.
A,29-Nov-10www.
vishay.
com5VishaySiliconixSi1317DLNewProductTYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)*ThepowerdissipationPDisbasedonTJ(max)=150°C,usingjunction-to-casethermalresistance,andismoreusefulinsettlingtheupperdissipationlimitforcaseswhereadditionalheatsinkingisused.
Itisusedtodeterminethecurrentrating,whenthisratingfallsbelowthepackagelimit.
CurrentDerating*0.
00.
40.
81.
21.
60255075100125150TC-CaseTemperature(°C)ID-DrainCurrent(A)Power,Junction-to-Case0.
00.
10.
20.
30.
40.
50.
60255075100125150TC-CaseTemperature(°C)Power(W)Power,Junction-to-Ambient0.
000.
090.
180.
270.
360.
450255075100125150TA-AmbientTemperature(°C)Power(W)www.
vishay.
com6DocumentNumber:67194S10-2764-Rev.
A,29-Nov-10VishaySiliconixSi1317DLNewProductTYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)VishaySiliconixmaintainsworldwidemanufacturingcapability.
Productsmaybemanufacturedatoneofseveralqualifiedlocations.
ReliabilitydataforSiliconTechnologyandPackageReliabilityrepresentacompositeofallqualifiedlocations.
Forrelateddocumentssuchaspackage/tapedrawings,partmarking,andreliabilitydata,seewww.
vishay.
com/ppg67194.
NormalizedThermalTransientImpedance,Junction-to-Ambient10-310-2110100010-110-41000.
20.
1SquareWavePulseDuration(s)NormalizedEffectiveTransientThermalImpedance10.
10.
01t1t2Notes:PDM1.
DutyCycle,D=2.
PerUnitBase=RthJA=360°C/W3.
TJM-TA=PDMZthJA(t)t1t24.
SurfaceMountedDutyCycle=0.
5SinglePulse0.
020.
05NormalizedThermalTransientImpedance,Junction-to-Foot10-310-201110-110-40.
20.
1DutyCycle=0.
5SquareWavePulseDuration(s)NormalizedEffectiveTransientThermalImpedance10.
10.
010.
05SinglePulse0.
02LbcEE1eDe1A2AA1120.
08c3PackageInformationVishaySiliconixDocumentNumber:7115306-Jul-01www.
vishay.
com1SC70:3LEADSMILLIMETERSINCHESDimMinNomMaxMinNomMaxA0.
90–1.
100.
035–0.
043A1––0.
10––0.
004A20.
80–1.
000.
031–0.
039b0.
25–0.
400.
010–0.
016c0.
10–0.
250.
004–0.
010D1.
802.
002.
200.
0710.
0790.
087E1.
802.
102.
400.
0710.
0830.
094E11.
151.
251.
350.
0450.
0490.
053e0.
65BSC0.
026BSCe11.
201.
301.
400.
0470.
0510.
055L0.
100.
200.
300.
0040.
0080.
0127_Nom7_NomECN:S-03946—Rev.
C,09-Jul-01DWG:5549AN813VishaySiliconixDocumentNumber:7123612-Dec-03www.
vishay.
com1Single-ChannelLITTLEFOOTRSC-703-Pinand6-PinMOSFETRecommendedPadPatternandThermalPeformanceINTRODUCTIONBASICPADPATTERNSThistechnicalnotediscussespin-outs,packageoutlines,padpatterns,evaluationboardlayout,andthermalperformanceforsingle-channelLITTLEFOOTpowerMOSFETsintheSC-70package.
ThesenewVishaySiliconixdevicesareintendedforsmall-signalapplicationswhereaminiaturizedpackageisneededandlowlevelsofcurrent(around350mA)needtobeswitched,eitherdirectlyorbyusingalevelshiftconfiguration.
Vishayprovidesthesesingledeviceswitharangeofon-resistancespecificationsandinbothtraditional3-pinandnew6-pinversions.
Thenew6-pinSC-70packageenablesimprovedon-resistancevaluesandenhancedthermalperformancecomparedtothe3-pinpackage.
PIN-OUTFigure1showsthepin-outdescriptionandPin1identificationforthesingle-channelSC-70deviceinboth3-pinand6-pinconfigurations.
Thepin-outofthe6-pindeviceallowstheuseoffourpinsasdrainleads,whichhelpstoreduceon-resistanceandjunction-to-ambientthermalresistance.
SOT-323SC-70(3-LEADS)123TopViewGSDSOT-363SC-70(6-LEADS)641235TopViewDDGFIGURE1.
Forpackagedimensionsseeoutlinedrawings:SC-70(3-Leads)(http://www.
vishay.
com/doc71153)SC-70(6-Leads)(http://www.
vishay.
com/doc71154)SeeApplicationNote826,RecommendedMinimumPadPatternsWithOutlineDrawingAccessforVishaySiliconixMOSFETs,(http://www.
vishay.
com/doc72286)forthebasicpadlayoutanddimensionsforthe3-pinSC-70andthe6-pinSC-70.
Thesepadpatternsaresufficientforthelow-powerapplicationsforwhichthispackageisintended.
Increasingthepadpatternhaslittleeffectonthermalresistanceforthe3-pindevice,reducingitbyonly10%to15%.
Butforthe6-pindevice,increasingthepadpatternsyieldsareductioninthermalresistanceontheorderof35%whenusinga1-inchsquarewithfullcopperonbothsidesoftheprintedcircuitboard(PCB).
TheavailabilityoffourdrainleadsratherthanthetraditionalsingledrainleadallowsabetterthermalpathfromthepackagetothePCBandexternalenvironment.
EVALUATIONBOARDSFORTHESINGLESC70-3ANDSC70-6Figure2showsthe3-pinand6-pinSC-70evaluationboards(EVB).
Bothmeasure0.
6inchesby0.
5inches.
Theircopperpadtracesarethesameasdescribedintheprevioussection,BasicPadPatterns.
Bothboardsallowinterrogationfromtheouterpinsto6-pinDIPconnections,permittingtestsocketstobeusedinevaluationtesting.
ThethermalperformanceofthesingleSC-70hasbeenmeasuredontheEVBforboththe3-pinand6-pindevices,theresultsshowninFigures3and4.
Theminimumrecommendedfootprintontheevaluationboardwascomparedwiththeindustrystandardof1-inchsquareFR4PCBwithcopperonbothsidesoftheboard.
FIGURE2.
FrontofBoardSC70-3FrontofBoardSC70-6BackofBoard,SC70-3andSC70-6ChipFETrChipFETrvishay.
comAN813VishaySiliconixwww.
vishay.
com2DocumentNumber:7123612-Dec-03THERMALPERFORMANCEJunction-to-FootThermalResistance(thePackagePerformance)Thermalperformanceforthe3-pinSC-70measuredasjunction-to-footthermalresistanceis285_C/Wtypical,340_C/Wmaximum.
Junction-to-footthermalresistanceforthe6-pinSC70-6is105_C/Wtypical,130_C/Wmaximum—anearlytwo-thirdsreductioncomparedwiththe3-pindevice.
The"foot"isthedrainleadofthedeviceasitconnectswiththebody.
Thisimprovedperformanceisobtainedbytheincreaseindrainleadsfromonetofouronthe6-pinSC-70.
NotethatthesenumbersaresomewhathigherthanotherLITTLEFOOTdevicesduetothelimitedthermalperformanceoftheAlloy42lead-framecomparedwithastandardcopperlead-frame.
Junction-to-AmbientThermalResistance(dependentonPCBsize)ThetypicalRθJAforthesingle3-pinSC-70is360_C/Wsteadystate,comparedwith180_C/Wforthe6-pinSC-70.
Maximumratingsare430_C/Wforthe3-pindeviceversus220_C/Wforthe6-pindevice.
Allfiguresarebasedonthe1-inchsquareFR4testboard.
Thefollowingtableshowshowthethermalresistanceimpactspowerdissipationforthetwodifferentpin-outsattwodifferentambienttemperatures.
SC-70(3-PIN)RoomAmbient25_CElevatedAmbient60_CPD+TJ(max)*TARqJAPD+150oC*25oC360oCńWPD+347mWPD+TJ(max)*TARqJAPD+150oC*60oC360oCńWPD+250mWSC-70(6-PIN)RoomAmbient25_CElevatedAmbient60_CPD+TJ(max)*TARqJAPD+150oC*25oC180oCńWPD+694mWPD+TJ(max)*TARqJAPD+150oC*60oC180oCńWPD+500mWNOTE:Althoughtheyareintendedforlow-powerapplications,devicesinthe6-pinSC-70willhandlepowerdissipationinexcessof0.
5W.
TestingToaidcomparisonfurther,Figures3and4illustratesingle-channelSC-70thermalperformanceontwodifferentboardsizesandtwodifferentpadpatterns.
Theresultsdisplaythethermalperformanceouttosteadystateandproduceagraphicaccountofthethermalperformancevariationbetweenthetwopackages.
ThemeasuredsteadystatevaluesofRθJAforthesingle3-pinand6-pinSC-70areasfollows:LITTLEFOOTSC-703-Pin6-Pin1)Minimumrecommendedpadpattern(seeFigure4)ontheEVB.
410.
31_C/W329.
7_C/W2)Industrystandard1"squarePCBwithmaximumcopperbothsides.
360_C/W211.
8_C/WTheresultsshowthatdesignerscanreducethermalresistanceRθJAontheorderof20%simplybyusingthe6-pindeviceratherthanthe3-pindevice.
Inthisexample,a80_C/Wreductionwasachievedwithoutanincreaseinboardarea.
Ifincreasingboardsizeisanoption,afurther118_C/Wreductioncouldbeobtainedbyutilizinga1-inchsquarePCBarea.
Time(Secs)FIGURE3.
ComparisonofSC70-3andSC70-6onEVBThermalResistance(C/W)014008016010010002401010-110-210-310-410-50.
5inx0.
6inEVB3-pin320Time(Secs)FIGURE4.
ComparisonofSC70-3andSC70-6on1"SquareFR4PCBThermalResistance(C/W)014008016010010002401010-110-210-310-410-51"SquareFR4PCB3206-pin3-pin6-pinApplicationNote826VishaySiliconixDocumentNumber:72601www.
vishay.
comRevision:21-Jan-0817APPLICATIONNOTERECOMMENDEDMINIMUMPADSFORSC-70:3-Lead0.
022(0.
559)0.
096(2.
438)RecommendedMinimumPadsDimensionsinInches/(mm)0.
025(0.
622)0.
027(0.
686)0.
071(1.
803)0.
045(1.
143)0.
026(0.
648)ReturntoIndexReturntoIndexLegalDisclaimerNoticewww.
vishay.
comVishayRevision:08-Feb-171DocumentNumber:91000DisclaimerALLPRODUCT,PRODUCTSPECIFICATIONSANDDATAARESUBJECTTOCHANGEWITHOUTNOTICETOIMPROVERELIABILITY,FUNCTIONORDESIGNOROTHERWISE.
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