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1N4148WSwww.
vishay.
comVishaySemiconductorsRev.
2.
3,06-Jul-171DocumentNumber:85751Fortechnicalquestionswithinyourregion:DiodesAmericas@vishay.
com,DiodesAsia@vishay.
com,DiodesEurope@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000SmallSignalFastSwitchingDiodeMARKING(exampleonly)Bar=cathodemarkingXY=typecodeDESIGNSUPPORTTOOLSclicklogotogetstartedFEATURESSiliconepitaxialplanardiodeFastswitchingdiodesAEC-Q101qualifiedavailableBaseP/N-E3-RoHS-compliant,commercialgradeBaseP/N-HE3-RoHS-compliant,AEC-Q101qualifiedMaterialcategorization:fordefinitionsofcompliancepleaseseewww.
vishay.
com/doc99912MECHANICALDATACase:SOD-323Weight:approx.
4.
3mgPackagingcodes/options:18/10Kper13"reel(8mmtape),10K/box08/3Kper7"reel(8mmtape),15K/boxNote(1)Validprovidedthatelectrodesarekeptatambienttemperature.
Note(1)ValidprovidedthatelectrodesarekeptatambienttemperatureXY22610AvailableModelsPARTSTABLEPARTORDERINGCODECIRCUITCONFIGURATIONTYPEMARKINGREMARKS1N4148WS1N4148WS-E3-08or1N4148WS-E3-18SingleA2Tapeandreel1N4148WS-HE3-08or1N4148WS-HE3-18ABSOLUTEMAXIMUMRATINGS(Tamb=25°C,unlessotherwisespecified)PARAMETERTESTCONDITIONSYMBOLVALUEUNITReversevoltageVR75VRepetitivepeakreversevoltageVRRM100Averagerectifiedcurrenthalfwaverectificationwithresistiveload(1)f≥50HzIF(AV)150mASurgeforwardcurrentt<1sandTj=25°CIFSM350Powerdissipation(1)Ptot200mWTHERMALCHARACTERISTICS(Tamb=25°C,unlessotherwisespecified)PARAMETERTESTCONDITIONSYMBOLVALUEUNITThermalresistancejunctiontoambientair(1)RthJA650K/WJunctiontemperatureTj150°CStoragetemperaturerangeTstg-65to+150°COperatingtemperaturerangeTop-55to+150°C1N4148WSwww.
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com,DiodesAsia@vishay.
com,DiodesEurope@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(Tamb=25°C,unlessotherwisespecified)Fig.
1-ForwardCharacteristicsFig.
2-DynamicForwardResistancevs.
ForwardCurrentFig.
3-AdmissiblePowerDissipationvs.
AmbientTemperatureFig.
4-RelativeCapacitancevs.
ReverseVoltageELECTRICALCHARACTERISTICS(Tamb=25°C,unlessotherwisespecified)PARAMETERTESTCONDITIONSYMBOLMIN.
TYP.
MAX.
UNITForwardvoltageIF=10mAVF1VIF=100mAVF1.
2VLeakagecurrentVR=20VIR25nAVR=75VIR5μAVR=100VIR100VR=20V,Tj=150°CIR50DiodecapacitanceVF=VR=0VCD4pFVoltagerisewhenswitchingONTestedwith50mApulses,tp=0.
1μs,risetime<30ns,fp=(5to100)kHzVfr2.
5VReverserecoverytimeIF=10mA,iR=1mA,VR=6V,RL=100Ωtrr4ns17437012VF(V)IF(mA)10-110-2110102103Tj=100°CTj=25°C17438f=1kHzTj=25°CIF(mA)Rf(Ω)1010210310410-210-11102102525252505010015020025005010015020020324Tamb-AmbientTemperature(°C)Ptot-PowerDissipation(mW)17440VR(V)0.
70.
80.
91.
01.
1f=1MHzTj=25°C2086410CD(VR)CD(0V)1N4148WSwww.
vishay.
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2.
3,06-Jul-173DocumentNumber:85751Fortechnicalquestionswithinyourregion:DiodesAmericas@vishay.
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THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000Fig.
5-LeakageCurrentvs.
JunctionTemperatureFig.
6-AdmissibleRepetitivePeakForwardCurrentvs.
PulseDuration17441Tj(°C)IR(nA)1010210310410020025252525VR=20V1017442tP(s)IFRM(A)10013510-510-410-31010-110-225252525252524103524135240.
1IIFRMTn=tP/TT=1/fPttPn=00.
10.
20.
51N4148WSwww.
vishay.
comVishaySemiconductorsRev.
2.
3,06-Jul-174DocumentNumber:85751Fortechnicalquestionswithinyourregion:DiodesAmericas@vishay.
com,DiodesAsia@vishay.
com,DiodesEurope@vishay.
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THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000PACKAGEDIMENSIONSinmillimeters(inches):SOD-323Rev.
6-Date:23.
Sept.
201617443Documentno.
:S8-V-3910.
02-001(4)Created-Date:24.
August.
2004Footprintrecommendation:0.
6[0.
024]1.
1[0.
043]1.
5[0.
059]2.
50[0.
098]2.
85[0.
112]1.
60[0.
063]1.
95[0.
077]0°-8°0.
25[0.
010]0.
40[0.
016]Cathodebar0.
20[0.
008]0.
40[0.
016]0.
8[0.
031]0.
2[0.
008]1.
15[0.
045]0.
10[0.
004]0.
1[0.
004]max.
0.
15[0.
006]1.
6[0.
063]0.
8[0.
031]0.
8[0.
031]LegalDisclaimerNoticewww.
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