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SemiconductorComponentsIndustries,LLC,2006May,2006Rev.
91PublicationOrderNumber:MMT05B230T3/DMMT05B230T3,MMT05B260T3,MMT05B310T3PreferredDevicesThyristorSurgeProtectorsHighVoltageBidirectionalTSPDTheseThyristorSurgeProtectivedevices(TSPD)preventovervoltagedamagetosensitivecircuitsbylightning,inductionandpowerlinecrossings.
Theyarebreakovertriggeredcrowbarprotectors.
Turnoffoccurswhenthesurgecurrentfallsbelowtheholdingcurrentvalue.
Secondaryprotectionapplicationsforelectronictelecomequipmentatcustomerpremises.
FeaturesHighSurgeCurrentCapability:50A10x1000msec,forControlledTemperatureEnvironmentsTheMMT05B230T3Seriesisusedtohelpequipmentmeetvariousregulatoryrequirementsincluding:Bellcore1089,ITUK.
20&K.
21,IEC950,UL1459&1950andFCCPart68BidirectionalProtectioninaSingleDeviceLittleChangeofVoltageLimitwithTransientAmplitudeorRateFreedomfromWearoutMechanismsPresentinNonSemiconductorDevicesFailSafe,ShortsWhenOverstressed,PreventingContinuedUnprotectedOperationSurfaceMountTechnology(SMT)IndicatesULRegisteredFile#E210057PbFreePackagesareAvailableMAXIMUMRATINGS(TJ=25°Cunlessotherwisenoted)RatingSymbolValueUnitOffStateVoltageMaximumMMT05B230T3MMT05B260T3MMT05B310T3VDM"170"200"270VMaximumPulseSurgeShortCircuitCurrentNonRepetitiveDoubleExponentialDecayWaveform(Notes1and2)(25°CInitialTemperature)8x20msec10x160msec10x560msec10x1000msecIPPS1IPPS2IPPS3IPPS4"150"100"70"50A(pk)MaximumNonRepetitiveRateofChangeofOnStateCurrentDoubleExponentialWaveform,R=1.
0,L=1.
5mH,C=1.
67mF,Ipk=110Adi/dt"150A/msStressesexceedingMaximumRatingsmaydamagethedevice.
MaximumRatingsarestressratingsonly.
FunctionaloperationabovetheRecommendedOperatingConditionsisnotimplied.
ExtendedexposuretostressesabovetheRecommendedOperatingConditionsmayaffectdevicereliability.
1.
Allowcoolingbeforetestingsecondpolarity.
2.
Measuredunderpulseconditionstoreduceheating.
BIDIRECTIONALTSPD50AMPERESURGE265thru365VOLTSPreferreddevicesarerecommendedchoicesforfutureuseandbestoverallvalue.
MT1MT2SMB(NoPolarity)(EssentiallyJEDECDO214AA)CASE403C()RPBx=DeviceCodex=GorJY=YearWW=WorkWeekG=PbFreePackageMARKINGDIAGRAMSAYWWRPBxGGhttp://onsemi.
comSeedetailedorderingandshippinginformationinthepackagedimensionssectiononpage5ofthisdatasheet.
ORDERINGINFORMATIONMMT05B230T3,MMT05B260T3,MMT05B310T3http://onsemi.
com2THERMALCHARACTERISTICSCharacteristicSymbolMaxUnitOperatingTemperatureRangeBlockingorConductingStateTJ140to+125°COverloadJunctionTemperatureMaximumConductingStateOnlyTJ2+175°CInstantaneousPeakPowerDissipation(Ipk=50A,10x1000msec@25°C)PPK2000WMaximumLeadTemperatureforSolderingPurposes1/8″fromCasefor10SecondsTL260°CELECTRICALCHARACTERISTICS(TJ=25°Cunlessotherwisenoted)Devicesarebidirectional.
Allelectricalparametersapplytoforwardandreversepolarities.
CharacteristicsSymbolMinTypMaxUnitBreakoverVoltage(Bothpolarities)(dv/dt=100V/ms,ISC=1.
0A,Vdc=1000V)MMT05B230T3MMT05B260T3MMT05B310T3(+65°C)MMT05B230T3MMT05B260T3MMT05B310T3V(BO)265320365280340400VBreakoverVoltage(Bothpolarities)(f=60Hz,ISC=1.
0A(rms),VOC=1000V(rms),MMT05B230T3RI=1.
0kW,t=0.
5cycle)(Note3)MMT05B260T3MMT05B310T3(+65°C)MMT05B230T3MMT05B260T3MMT05B310T3V(BO)265320365280340400VBreakoverVoltageTemperatureCoefficientdV(BO)/dTJ0.
08%/°CBreakdownVoltage(I(BR)=1.
0mA)BothpolaritiesMMT05B230T3MMT05B260T3MMT05B310T3V(BR)190240280VOffStateCurrent(VD1=50V)BothpolaritiesOffStateCurrent(VD2=VDM)BothpolaritiesID1ID22.
05.
0mAOnStateVoltage(IT=1.
0A)(PW≤300ms,DutyCycle≤2%)(Note3)VT1.
533.
0VBreakoverCurrent(f=60Hz,VDM=1000V(rms),RS=1.
0kW)BothpolaritiesIBO230mAHoldingCurrent(Bothpolarities)(Note3)VS=500V;IT(InitiatingCurrent)="1.
0AIH150340mACriticalRateofRiseofOffStateVoltage(Linearwaveform,VD=RatedVBR,TJ=25°C)dv/dt2000V/msCapacitance(f=1.
0MHz,50Vdc,1.
0VrmsSignal)Capacitance(f=1.
0MHz,2.
0Vdc,15mVrmsSignal)CO225375pF3.
Measuredunderpulseconditionstoreduceheating.
MMT05B230T3,MMT05B260T3,MMT05B310T3http://onsemi.
com3+Current+VoltageVTMV(BO)I(BO)ID2ID1VD1VD2V(BR)IHSymbolParameterID1,ID2OffStateLeakageCurrentVD1,VD2OffStateBlockingVoltageVBRBreakdownVoltageVBOBreakoverVoltageIBOBreakoverCurrentIHHoldingCurrentVTMOnStateVoltageVoltageCurrentCharacteristicofTSPD(BidirectionalDevice)Figure1.
OffStateCurrentversusTemperatureTEMPERATURE(°C)1401201008060402001001010.
10.
01ID1,OFFSTATECURRENT(A)Figure2.
BreakdownVoltageversusTemperatureTEMPERATURE(°C)VBR,BREAKDOWNVOLTAGE(VOLTS)VD1=50V10050050125320300280260240220200180160340MMT05B230T3MMT05B260T3MMT05B310T3μ752525MMT05B230T3,MMT05B260T3,MMT05B310T3http://onsemi.
com4Figure3.
BreakoverVoltageversusTemperatureFigure4.
HoldingCurrentversusTemperatureTEMPERATURE(°C)100010050050125100200300400500600700800900IH,HOLDINGCURRENT(mA)VBO,BREAKOVERVOLTAGE(VOLTS)TEMPERATURE(°C)10050050125360340320300280260240220200380MMT05B230T3MMT05B260T3MMT05B310T3TIME(sec)100100.
10.
010.
001100101CURRENT(A)1Figure5.
ExponentialDecayPulseWaveformTIME(ms)0500IppPEAKPULSECURRENT%Ipp100tr=risetimetopeakvaluetf=decaytimetohalfvaluetrtfPeakValueHalfValueFigure6.
PeakSurgeOnStateCurrentversusSurgeCurrentDuration,SinusoidalWaveform752525257525TELECOMEQUIPMENTOUTSIDEPLANTTIPRINGGNDMMT05B230T3,MMT05B260T3,MMT05B310T3http://onsemi.
com5TELECOMEQUIPMENTOUTSIDEPLANTTIPRINGGNDTELECOMEQUIPMENTOUTSIDEPLANTTIPRINGGNDPPTC*PPTC*HEATCOILHEATCOIL*PolymericPTC(positivetemperaturecoefficient)overcurrentprotectiondeviceORDERINGINFORMATIONDevicePackageShippingMMT05B230T3SMB2500/Tape&ReelMMT05B230T3GSMB(PbFree)MMT05B260T3SMBMMT05B260T3GSMB(PbFree)MMT05B310T3SMBMMT05B310T3GSMB(PbFree)Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D.
ASDBJPKCHNOTES:1.
DIMENSIONINGANDTOLERANCINGPERANSIY14.
5M,1982.
2.
CONTROLLINGDIMENSION:INCH.
3.
DDIMENSIONSHALLBEMEASUREDWITHINDIMENSIONP.
DIMMINMAXMINMAXMILLIMETERSINCHESA0.
1600.
1804.
064.
57B0.
1300.
1503.
303.
81C0.
0750.
0951.
902.
41D0.
0770.
0831.
962.
11H0.
00200.
00600.
0510.
152J0.
0060.
0120.
150.
30K0.
0300.
0500.
761.
27P0.
020REF0.
51REFS0.
2050.
2205.
215.
59SCALE1:1CASE403C01ISSUEADATE01/02/2000SMBMARKINGDIAGRAMxxxx=SpecificDeviceCodeY=YearWW=WorkWeekYWWxxxxMECHANICALCASEOUTLINEPACKAGEDIMENSIONSONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
98ARB18918CDOCUMENTNUMBER:DESCRIPTION:ElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromtheDocumentRepository.
Printedversionsareuncontrolledexceptwhenstamped"CONTROLLEDCOPY"inred.
PAGE1OF1SMBSemiconductorComponentsIndustries,LLC,2019www.
onsemi.
comwww.
onsemi.
com1ONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/PatentMarking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
ONSemiconductorisanEqualOpportunity/AffirmativeActionEmployer.
Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner.
PUBLICATIONORDERINGINFORMATIONTECHNICALSUPPORTNorthAmericanTechnicalSupport:VoiceMail:18002829855TollFreeUSA/CanadaPhone:011421337902910LITERATUREFULFILLMENT:EmailRequeststo:orderlit@onsemi.
comONSemiconductorWebsite:www.
onsemi.
comEurope,MiddleEastandAfricaTechnicalSupport:Phone:00421337902910Foradditionalinformation,pleasecontactyourlocalSalesRepresentative
91PublicationOrderNumber:MMT05B230T3/DMMT05B230T3,MMT05B260T3,MMT05B310T3PreferredDevicesThyristorSurgeProtectorsHighVoltageBidirectionalTSPDTheseThyristorSurgeProtectivedevices(TSPD)preventovervoltagedamagetosensitivecircuitsbylightning,inductionandpowerlinecrossings.
Theyarebreakovertriggeredcrowbarprotectors.
Turnoffoccurswhenthesurgecurrentfallsbelowtheholdingcurrentvalue.
Secondaryprotectionapplicationsforelectronictelecomequipmentatcustomerpremises.
FeaturesHighSurgeCurrentCapability:50A10x1000msec,forControlledTemperatureEnvironmentsTheMMT05B230T3Seriesisusedtohelpequipmentmeetvariousregulatoryrequirementsincluding:Bellcore1089,ITUK.
20&K.
21,IEC950,UL1459&1950andFCCPart68BidirectionalProtectioninaSingleDeviceLittleChangeofVoltageLimitwithTransientAmplitudeorRateFreedomfromWearoutMechanismsPresentinNonSemiconductorDevicesFailSafe,ShortsWhenOverstressed,PreventingContinuedUnprotectedOperationSurfaceMountTechnology(SMT)IndicatesULRegisteredFile#E210057PbFreePackagesareAvailableMAXIMUMRATINGS(TJ=25°Cunlessotherwisenoted)RatingSymbolValueUnitOffStateVoltageMaximumMMT05B230T3MMT05B260T3MMT05B310T3VDM"170"200"270VMaximumPulseSurgeShortCircuitCurrentNonRepetitiveDoubleExponentialDecayWaveform(Notes1and2)(25°CInitialTemperature)8x20msec10x160msec10x560msec10x1000msecIPPS1IPPS2IPPS3IPPS4"150"100"70"50A(pk)MaximumNonRepetitiveRateofChangeofOnStateCurrentDoubleExponentialWaveform,R=1.
0,L=1.
5mH,C=1.
67mF,Ipk=110Adi/dt"150A/msStressesexceedingMaximumRatingsmaydamagethedevice.
MaximumRatingsarestressratingsonly.
FunctionaloperationabovetheRecommendedOperatingConditionsisnotimplied.
ExtendedexposuretostressesabovetheRecommendedOperatingConditionsmayaffectdevicereliability.
1.
Allowcoolingbeforetestingsecondpolarity.
2.
Measuredunderpulseconditionstoreduceheating.
BIDIRECTIONALTSPD50AMPERESURGE265thru365VOLTSPreferreddevicesarerecommendedchoicesforfutureuseandbestoverallvalue.
MT1MT2SMB(NoPolarity)(EssentiallyJEDECDO214AA)CASE403C()RPBx=DeviceCodex=GorJY=YearWW=WorkWeekG=PbFreePackageMARKINGDIAGRAMSAYWWRPBxGGhttp://onsemi.
comSeedetailedorderingandshippinginformationinthepackagedimensionssectiononpage5ofthisdatasheet.
ORDERINGINFORMATIONMMT05B230T3,MMT05B260T3,MMT05B310T3http://onsemi.
com2THERMALCHARACTERISTICSCharacteristicSymbolMaxUnitOperatingTemperatureRangeBlockingorConductingStateTJ140to+125°COverloadJunctionTemperatureMaximumConductingStateOnlyTJ2+175°CInstantaneousPeakPowerDissipation(Ipk=50A,10x1000msec@25°C)PPK2000WMaximumLeadTemperatureforSolderingPurposes1/8″fromCasefor10SecondsTL260°CELECTRICALCHARACTERISTICS(TJ=25°Cunlessotherwisenoted)Devicesarebidirectional.
Allelectricalparametersapplytoforwardandreversepolarities.
CharacteristicsSymbolMinTypMaxUnitBreakoverVoltage(Bothpolarities)(dv/dt=100V/ms,ISC=1.
0A,Vdc=1000V)MMT05B230T3MMT05B260T3MMT05B310T3(+65°C)MMT05B230T3MMT05B260T3MMT05B310T3V(BO)265320365280340400VBreakoverVoltage(Bothpolarities)(f=60Hz,ISC=1.
0A(rms),VOC=1000V(rms),MMT05B230T3RI=1.
0kW,t=0.
5cycle)(Note3)MMT05B260T3MMT05B310T3(+65°C)MMT05B230T3MMT05B260T3MMT05B310T3V(BO)265320365280340400VBreakoverVoltageTemperatureCoefficientdV(BO)/dTJ0.
08%/°CBreakdownVoltage(I(BR)=1.
0mA)BothpolaritiesMMT05B230T3MMT05B260T3MMT05B310T3V(BR)190240280VOffStateCurrent(VD1=50V)BothpolaritiesOffStateCurrent(VD2=VDM)BothpolaritiesID1ID22.
05.
0mAOnStateVoltage(IT=1.
0A)(PW≤300ms,DutyCycle≤2%)(Note3)VT1.
533.
0VBreakoverCurrent(f=60Hz,VDM=1000V(rms),RS=1.
0kW)BothpolaritiesIBO230mAHoldingCurrent(Bothpolarities)(Note3)VS=500V;IT(InitiatingCurrent)="1.
0AIH150340mACriticalRateofRiseofOffStateVoltage(Linearwaveform,VD=RatedVBR,TJ=25°C)dv/dt2000V/msCapacitance(f=1.
0MHz,50Vdc,1.
0VrmsSignal)Capacitance(f=1.
0MHz,2.
0Vdc,15mVrmsSignal)CO225375pF3.
Measuredunderpulseconditionstoreduceheating.
MMT05B230T3,MMT05B260T3,MMT05B310T3http://onsemi.
com3+Current+VoltageVTMV(BO)I(BO)ID2ID1VD1VD2V(BR)IHSymbolParameterID1,ID2OffStateLeakageCurrentVD1,VD2OffStateBlockingVoltageVBRBreakdownVoltageVBOBreakoverVoltageIBOBreakoverCurrentIHHoldingCurrentVTMOnStateVoltageVoltageCurrentCharacteristicofTSPD(BidirectionalDevice)Figure1.
OffStateCurrentversusTemperatureTEMPERATURE(°C)1401201008060402001001010.
10.
01ID1,OFFSTATECURRENT(A)Figure2.
BreakdownVoltageversusTemperatureTEMPERATURE(°C)VBR,BREAKDOWNVOLTAGE(VOLTS)VD1=50V10050050125320300280260240220200180160340MMT05B230T3MMT05B260T3MMT05B310T3μ752525MMT05B230T3,MMT05B260T3,MMT05B310T3http://onsemi.
com4Figure3.
BreakoverVoltageversusTemperatureFigure4.
HoldingCurrentversusTemperatureTEMPERATURE(°C)100010050050125100200300400500600700800900IH,HOLDINGCURRENT(mA)VBO,BREAKOVERVOLTAGE(VOLTS)TEMPERATURE(°C)10050050125360340320300280260240220200380MMT05B230T3MMT05B260T3MMT05B310T3TIME(sec)100100.
10.
010.
001100101CURRENT(A)1Figure5.
ExponentialDecayPulseWaveformTIME(ms)0500IppPEAKPULSECURRENT%Ipp100tr=risetimetopeakvaluetf=decaytimetohalfvaluetrtfPeakValueHalfValueFigure6.
PeakSurgeOnStateCurrentversusSurgeCurrentDuration,SinusoidalWaveform752525257525TELECOMEQUIPMENTOUTSIDEPLANTTIPRINGGNDMMT05B230T3,MMT05B260T3,MMT05B310T3http://onsemi.
com5TELECOMEQUIPMENTOUTSIDEPLANTTIPRINGGNDTELECOMEQUIPMENTOUTSIDEPLANTTIPRINGGNDPPTC*PPTC*HEATCOILHEATCOIL*PolymericPTC(positivetemperaturecoefficient)overcurrentprotectiondeviceORDERINGINFORMATIONDevicePackageShippingMMT05B230T3SMB2500/Tape&ReelMMT05B230T3GSMB(PbFree)MMT05B260T3SMBMMT05B260T3GSMB(PbFree)MMT05B310T3SMBMMT05B310T3GSMB(PbFree)Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D.
ASDBJPKCHNOTES:1.
DIMENSIONINGANDTOLERANCINGPERANSIY14.
5M,1982.
2.
CONTROLLINGDIMENSION:INCH.
3.
DDIMENSIONSHALLBEMEASUREDWITHINDIMENSIONP.
DIMMINMAXMINMAXMILLIMETERSINCHESA0.
1600.
1804.
064.
57B0.
1300.
1503.
303.
81C0.
0750.
0951.
902.
41D0.
0770.
0831.
962.
11H0.
00200.
00600.
0510.
152J0.
0060.
0120.
150.
30K0.
0300.
0500.
761.
27P0.
020REF0.
51REFS0.
2050.
2205.
215.
59SCALE1:1CASE403C01ISSUEADATE01/02/2000SMBMARKINGDIAGRAMxxxx=SpecificDeviceCodeY=YearWW=WorkWeekYWWxxxxMECHANICALCASEOUTLINEPACKAGEDIMENSIONSONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
98ARB18918CDOCUMENTNUMBER:DESCRIPTION:ElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromtheDocumentRepository.
Printedversionsareuncontrolledexceptwhenstamped"CONTROLLEDCOPY"inred.
PAGE1OF1SMBSemiconductorComponentsIndustries,LLC,2019www.
onsemi.
comwww.
onsemi.
com1ONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/PatentMarking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
ONSemiconductorisanEqualOpportunity/AffirmativeActionEmployer.
Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner.
PUBLICATIONORDERINGINFORMATIONTECHNICALSUPPORTNorthAmericanTechnicalSupport:VoiceMail:18002829855TollFreeUSA/CanadaPhone:011421337902910LITERATUREFULFILLMENT:EmailRequeststo:orderlit@onsemi.
comONSemiconductorWebsite:www.
onsemi.
comEurope,MiddleEastandAfricaTechnicalSupport:Phone:00421337902910Foradditionalinformation,pleasecontactyourlocalSalesRepresentative
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