Tstgykt

SUMMARYV(BR)DSS=-60V;RDS(ON)=0.
125ID=-3.
0ADESCRIPTIONThisnewgenerationoftrenchMOSFETsfromZetexutilizesauniquestructurethatcombinesthebenefitsoflowon-resistancewithfastswitchingspeed.
Thismakesthemidealforhighefficiency,lowvoltage,powermanagementapplications.
FEATURESLowon-resistanceFastswitchingspeedLowthresholdLowgatedriveSOT23-6packageAPPLICATIONSDC-DCConvertersPowermanagementfunctionsDisconnectswitchesMotorcontrolDEVICEMARKING617ZXMP6A17E6PROVISIONALISSUEB-MARCH2005ADVANCEINFORMATION160VP-CHANNELENHANCEMENTMODEMOSFETDEVICEREELSIZETAPEWIDTHQUANTITYPERREELZXMP6A17E6TA7"8mm3000unitsZXMP6A17E6TC13"8mm10000unitsORDERINGINFORMATIONTopViewPINOUTSOT23-6ZXMP6A17E6PROVISIONALISSUEB-MARCH20052ADVANCEINFORMATIONPARAMETERSYMBOLVALUEUNITJunctiontoAmbient(a)RθJA113°C/WJunctiontoAmbient(b)RθJA73°C/WNOTES(a)Foradevicesurfacemountedon25mmx25mmFR4PCBwithhighcoverageofsinglesided1ozcopper,instillairconditions(b)ForadevicesurfacemountedonFR4PCBmeasuredattр5secs.
(c)Repetitiverating25mmx25mmFR4PCB,D=0.
02,pulsewidth300s-pulsewidthlimitedbymaximumjunctiontemperature.
RefertoTransientThermalImpedancegraph.
THERMALRESISTANCEPARAMETERSYMBOLLIMITUNITDrain-SourceVoltageVDSS-60VGateSourceVoltageVGS20VContinuousDrainCurrentVGS=10V;TA=25°C(b)VGS=10V;TA=70°C(b)VGS=10V;TA=25°C(a)ID-3.
0-2.
4-2.
3APulsedDrainCurrent(c)IDM-13.
6AContinuousSourceCurrent(BodyDiode)(b)IS-2.
5APulsedSourceCurrent(BodyDiode)(c)ISM-13.
6APowerDissipationatTA=25°C(a)LinearDeratingFactorPD1.
18.
8WmW/°CPowerDissipationatTA=25°C(b)LinearDeratingFactorPD1.
713.
6WmW/°COperatingandStorageTemperatureRangeTj:Tstg-55to+150°CABSOLUTEMAXIMUMRATINGSZXMP6A17E6PROVISIONALISSUEB-MARCH20053ADVANCEINFORMATION11010010m100m11002550751001251500.
00.
20.
40.
60.
81.
01.
21001m10m100m1101001k0204060801001001m10m100m1101001k110100100us100ms1sRDS(ON)Limited1msP-channelSafeOperatingAreaSinglePulse,Tamb=25°CDC10ms-IDDrainCurrent(A)-VDSDrain-SourceVoltage(V)DeratingCurveMaxPowerDissipation(W)Temperature(°C)D=0.
2D=0.
5D=0.
1TransientThermalImpedanceSinglePulseD=0.
05ThermalResistance(°C/W)PulseWidth(s)SinglePulseTamb=25°CPulsePowerDissipationMaximumPower(W)PulseWidth(s)CHARACTERISTICSZXMP6A17E6PROVISIONALISSUEB-MARCH2005ADVANCEINFORMATION4PARAMETERSYMBOLMIN.
TYP.
MAX.
UNITCONDITIONSSTATICDrain-SourceBreakdownVoltageV(BR)DSS-60VID=-250A,VGS=0VZeroGateVoltageDrainCurrentIDSS-1.
0AVDS=-60V,VGS=0VGate-BodyLeakageIGSS100nAVGS=20V,VDS=0VGate-SourceThresholdVoltageVGS(th)-1.
0VID=-250A,VDS=VGSStaticDrain-SourceOn-StateResistance(1)RDS(on)0.
1250.
190VGS=-10V,ID=-2.
3AVGS=-4.
5V,ID=-1.
9AForwardTransconductance(1)(3)gfs4.
9SVDS=-15V,ID=-2.
3ADYNAMIC(3)InputCapacitanceCiss670pFVDS=-30V,VGS=0V,f=1MHzOutputCapacitanceCoss46.
7pFReverseTransferCapacitanceCrss28pFSWITCHING(2)(3)Turn-OnDelayTimetd(on)2.
4nsVDD=-30V,ID=-1ARG6.
0,VGS=-10VRiseTimetr3.
5nsTurn-OffDelayTimetd(off)30.
0nsFallTimetf7.
4nsGateChargeQg7.
3nCVDS=-30V,VGS=-5V,ID=-2.
3ATotalGateChargeQg15.
1nCVDS=-30V,VGS=-10V,ID=-2.
3AGate-SourceChargeQgs1.
8nCGate-DrainChargeQgd1.
9nCSOURCE-DRAINDIODEDiodeForwardVoltage(1)VSD-0.
85-0.
95VTJ=25°C,IS=-2A,VGS=0VReverseRecoveryTime(3)trr26.
4nsTJ=25°C,IF=-1.
7A,di/dt=100A/sReverseRecoveryCharge(3)Qrr32.
7nCELECTRICALCHARACTERISTICS(atTA=25°Cunlessotherwisestated)NOTES:(1)Measuredunderpulsedconditions.
Width=300s.
Dutycycle≤2%.
(2)Switchingcharacteristicsareindependentofoperatingjunctiontemperature.
(3)Fordesignaidonly,notsubjecttoproductiontesting.
ZXMP6A17E6PROVISIONALISSUEB-MARCH20055ADVANCEINFORMATION0.
11100.
010.
11100.
11100.
010.
1110123450.
1110-500501001500.
40.
60.
81.
01.
21.
41.
61.
82.
00.
11100.
11100.
00.
20.
40.
60.
81.
01.
21.
40.
010.
111010V2V3.
5V-VGS2.
5V4.
5V3VOutputCharacteristicsT=25°C-VGS-IDDrainCurrent(A)-VDSDrain-SourceVoltage(V)1.
5V3.
5V3V2V4.
5V10V2.
5VOutputCharacteristicsT=150°C-IDDrainCurrent(A)-VDSDrain-SourceVoltage(V)TypicalTransferCharacteristics-VDS=10VT=25°CT=150°C-IDDrainCurrent(A)-VGSGate-SourceVoltage(V)NormalisedCurvesvTemperatureRDS(on)VGS=-10VID=-0.
9AVGS(th)VGS=VDSID=-250uANormalisedRDS(on)andVGS(th)TjJunctionTemperature(°C)4.
5V10V3V2V3.
5V2.
5VOn-ResistancevDrainCurrentT=25°C-VGSRDS(on)Drain-SourceOn-Resistance()-IDDrainCurrent(A)T=150°CT=25°CSource-DrainDiodeForwardVoltage-VSDSource-DrainVoltage(V)-ISDReverseDrainCurrent(A)TYPICALCHARACTERISTICSZXMP6A17E6PROVISIONALISSUEB-MARCH20056ADVANCEINFORMATION0.
111001002003004005006007008009001000CRSSCOSSCISSVGS=0Vf=1MHzCCapacitance(pF)-VDS-Drain-SourceVoltage(V)02468101214160246810ID=-2.
2AVDS=-30VGate-SourceVoltagevGateChargeCapacitancevDrain-SourceVoltageQ-Charge(nC)-VGSGate-SourceVoltage(V)TYPICALCHARACTERISTICSZXMP6A17E6PROVISIONALISSUEB-MARCH20057EuropeZetexGmbHStreitfeldstrae19D-81673MünchenGermanyTelefon:(49)894549490Fax:(49)8945494949europe.
sales@zetex.
comAmericasZetexInc700VeteransMemorialHwyHauppauge,NY11788USATelephone:(1)6313602222Fax:(1)6313608222usa.
sales@zetex.
comAsiaPacificZetex(Asia)Ltd3701-04MetroplazaTower1HingFongRoad,KwaiFongHongKongTelephone:(852)26100611Fax:(852)24250494asia.
sales@zetex.
comCorporateHeadquartersZetexSemiconductorsplcZetexTechnologyPark,ChaddertonOldham,OL99LLUnitedKingdomTelephone(44)1616224444Fax:(44)1616224446hq@zetex.
comTheseofficesaresupportedbyagentsanddistributorsinmajorcountriesworld-wide.
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TheCompanyreservestherighttoalterwithoutnoticethespecification,design,priceorconditionsofsupplyofanyproductorservice.
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comZetexSemiconductorsplc2005ADVANCEINFORMATIONDIMMillimetersInchesDIMMillimetersInchesMinMaxMinMaxMinMaxMinMaxA0.
901.
450.
350.
057E2.
603.
000.
1020.
118A10.
000.
1500.
006E11.
501.
750.
0590.
069A20.
901.
300.
0350.
051L0.
100.
600.
0040.
002b0.
350.
500.
0140.
019e0.
95REF0.
037REFC0.
090.
200.
00350.
008e11.
90REF0.
074REFD2.
803.
000.
1100.
118L0°10°0°10°PACKAGEDIMENSIONSCONTROLLINGDIMENSIONSINMILLIMETERSAPPROXCONVERSIONSINCHES.
PACKAGEOUTLINEPADLAYOUTDETAILS