maximumykt
ykt 178zx com cn 时间:2021-03-01 阅读:()
TheDesignofLowPowerBandgapReferenceYunqianZhang1,a,WeidongGeng1,b*,XiZeng1,c,ZhixunYang2,a1InstituteofPhoto-electronicsThinFilmDevicesandTechniqueofNankaiUniversity,KeyLaboratoryofPhoto-ElectronicsThinFilmDevicesandTechniqueofTianjin,KeyLaboratoryofOpto-electronicInformationScienceandTechnology,NankaiUniversity,Tianjin300071,China;2BeijingSigmaMicroCompany,Beijing100085,China.
1,azhangyq_nku@163.
com,1,bgengwd@nankai.
edu.
cn,1,czengxi1213@126.
com2,ayangzx@sigma.
com*Correspondingauthor:WeidongGeng:gengwd@nankai.
edu.
cn.
Keywords:Bandgap,Lowpower,Non-overlapclock,Capacitance-RatioAbstract.
Thispaperpresentsanovellowpowerbandgapreferencecircuit,thebandgapreferenceadoptshalfaperiodworkingmechanism.
Theoperationalamplifierdoesn'tworkduringtheswitchedcapacitornetworksampling.
Andtheoperationalamplifierworksafterthechargebalanced.
Thebandgapreferencerunsdiscontinuously.
Thedesignimplementsinstandard0.
18umCMOSprocess.
Thesimulationresultshowsthat,thecircuitconsumes19.
8uAat3.
3V.
Thenoiseofthecircuitinlowfrequencyachieves3.
9/√andthetemperaturecoefficientis21ppm/℃.
1.
IntroductionReferencevoltageblockisthefundamentalpartofthepowermoduleofelectricalsystem,itsperformanceparameters,suchasaccuracystabilityandsoon,decidestheperformanceoftheelectricalsystem.
Inrecentyears,especially,electronicproductsbecomeminiaturizationandportability,referencevoltageblockneedslowerpowerdissipation.
Thedesignofthereferencevoltageblockadoptsbandgapreferencestructuregenerally.
In2012,Zhouzekunpresentsahighprecisionhigh-ordercurvature-compensatedbandgapreferencecompatiblewithstandardBiCMOSprocess.
Experimentalresultsoftheproposedbandgapreferencedemonstratethatatemperaturecoefficientof5ppm/℃isrealizedat3.
6Vpowersupplywhiledissipatingamaximumsupplycurrentof25uA[1].
Inthesameyear,Peng-YuChenpresentsabandgapreferencewhichusesalow-gainamplifiertogenerateanaccuratereferencevoltage.
Theaveragepowerconsumptionisapproximately24.
6uWat1Vsupplyvoltage,whichexport434.
2mV[2].
In2013,CaoYingshowsatotal-ionizing-doseradiationtoleranceofbandgapreferenceindeep-submicronCMOStechnology,whichreachesatemperaturecoefficientof15ppm/℃from-40℃to125℃andconsumes50uA[3].
Inthesameyear,A.
Martnez-Nietodesignsalowtemperaturecoefficient,curvature-compensatedCMOSbandgapvoltagereference,whichimplementsinstandard0.
18umCMOSprocesswith1.
8Vpowersupply.
Thecircuithasa4-bittrimmingcircuittocompensateforprocessvariations.
Theoutputvoltageis1.
225VandshowsaTClowerthan2ppm/℃overatemperaturerangeof160℃andthepowerdissipationis620uW[4].
In2014,TommasoVerginepresetsabandgapreferencecircuitwhichhasbeendesignedtobeRadiation-Hardupto1Grad.
Thecircuithasbeendevelopedinacommercial65nmCMOStechnologywith1.
2Vofnominalvoltagesupply.
Thepowerconsumptionis240uWandtheoutputvoltageis331.
6mV[5].
Inthesameyear,BillMaproposesanovelCMOSbandgapreferencewithhigh-ordercurvature-compensationbyusingMOStransistorsoperatinginweakinversionregion.
Theexperimentalresultsshowthatthebandgapreferenceachieves4.
5ppm/℃andconsumes36uAat1.
2V[6].
Allresearchmentionedaboveemploytypicalbandgapreferencestructurewiththemechanismofworkingcontinuously.
Theprincipleofthetypicalbandgapreferencestructureamplifiesthevoltagewithratio-resistance,whichintroducesthethermalnoiseunavoidably.
Inallusiontoproblemsproposed,thispaperpresentsamechanismofhalfaperiodwhichreducestheworkingtimeoftheoperationalamplifiertolessenthepowerdissipation.
Thisbandgapreferencecircuitadoptscapacitancetoamplifythevoltagewithlowerthermalnoise.
2.
Ratio-capacitanceBandgapReferenceCircuitBasedonprincipleofswitchedcapacitance,capacitanceratiobandgapreferencedividedtheworkingtimeintotwonon-overlappartsemployingtwonon-overlapclock,asshowedinFig.
1.
ThecapacitanceC1samplesVBE1-VBE2inthefirstphaseandtheoutputvoltageofthecircuitismaintainedbyloadcapacitance.
Accordingtotheprincipleofchargeconservation,thechargeofcapacitanceC1transferstocapacitanceC2.
ThemultipleofC1toC2willamplifythevalueofVBE1-VBE2whiletheswitchattheoutputendclosingwiththeoutputvoltageVbg.
Fig.
1CapacitanceRatioBandgapReference3.
HalfaperiodWorkingmechanismCapacitanceratiobandgapreferencedividestheworkingtimeintotwoparts.
Theoperationalamplifierisusedasabufferinthefirstphasewhilesamplingthedifferenceofvoltage.
Accordingtotheprincipleofchargeconservation,thecircuitmultiplythedifferenceofvoltage.
Thestableoutputreferencevoltageiscomposedofthenegativetemperaturecoefficientofthevoltageandthemagnifiedpositivetemperaturecoefficientofthevoltage.
Powerdissipationoftheoperationalamplifieristhemainsourceinthebandgapreference.
Auniversalmethodoflow-powerdesignistoreducethepowerconsumption.
Reducingtheworkingtimeisalsoaneffectivewaytodesignalowpowerbandgapreference.
Theoperationalamplifierinthecapacitanceratiobandgapreferencedoesn'tneedtoworkinthefirstphasewithoutlossofchargeinthesamplingcapacitor.
Andtheoperationalamplifierinthebandgapreferenceworksinclosedloop,exportingthestableoutputvoltageasreferencevoltagedirectlyinthesecondphase.
Thispapersavesthepowerdissipationoftheoperationalamplifierinthefirstphasewithclosedoperationalamplifier.
Bottomplatesamplingtechnique,replacingtheclosedoperationalamplifierusedasabuffer,hasbeenusedinthedesignforsavingthechargeatthenegativeport.
Afteroptimizingthestructure,showedinFig.
1forlowerpowerdissipation,enablesignalEN_Phase2hasbeenaddedtotheoperationalamplifier,asFig.
2.
ThechargeinthecapacitanceC1transferstothecapacitanceC2inthesecondphasewiththeopeningoperationalamplifier.
Forthetimebeing,theoutputendofoperationalamplifierlinkstotheoutputendofthecircuitwhentheoutputvoltageoftheoperationalamplifierbecomesthereferencevoltageVbg.
Vbg=VBE1+nVBE.
(1)Fig.
2Half-periodCapacitorRatioBandgapReferencePhase1Phase2Phase2Phase2C1C2CLVBE1VBE2VbgPhase1Phase1Phase2Phase2Phase2C1C2CLVBE1VBE2VbgEN_Phase2Theoperationalamplifierinthebandgapreferenceadoptsthemechanismofhalfcycleworktimewhichcanreducethepowerconsumptionavailably.
Afterturningontheoperationalamplifier,thecircuitchargetheparasiticcapacitance,whichdecreasesthesettlingtimeoftheoutputvoltagewiththehalfaperiodworkingmechanism.
Sothehalfaperiodworkingmechanismneedsfasteroperationalamplifierwhichwillincreasethepowerconsumptionofthecircuit.
Apeakvalueoftheoutputvoltagewillbeproducedbecauseofnon-overlapclock,whichinfluencestheaccuracyofthebandgapreference.
AsshownasFig.
3,theenablesignalEN_Phase2hasbeenoptimizedtoresolvetheproblemoftheparasiticcapacitance.
Ensuringtheparasiticcapacitancecharged,theenablesignalEN_Phase2Fwillbeenabledadvanced.
Fig.
3OptimizedHalf-periodCapacitorRatioBandgapReference4.
SimulationExperimentsandAnalysisConsideringthecurrentapplyingtotheloadoutsideandtheloadcapacitanceinside,thespeedoftheclockshouldbechosen.
Theparasiticcapacitancesshouldreachthebalancedstatebeforetheoperationalamplifierworkingintheclosedloop.
Aheadofthesecondphase,theoperationalamplifierhasbeenenabledtoensurestableoutputvoltagewhilethecapacitanceratiomultipliesthevoltage.
Inlogic,thefallingedgeoftheEN_Phase2FissynchronizedwiththerisingedgeofthePhase2but,actually,thefallingedgeoftheEN_Phase2Fenablestheoperationalamplifierinadvance.
ThetimeinadvanceofEN_Phase2Fcanbedecidedconsideringthevalueoftheparasiticcapacitance.
Inthispaper,theratioofcapacitancebetweenC1andC2iselectedas4,aftertakingareaofthechip,powerconsumedbygeneratingtheVBE1andVBE2andthenoisecharacterofthecapacitance.
Thetemperaturecharacteristicofthecapacitanceratiobandgapreferencefrom-20℃to80℃hasbeenshownasFig.
4withthevarietyof7mVattheendofthecircuit.
Theoutputvoltagecanbestableat10.
75uswithsteadypowersupply,asshowninFig.
5.
Fig.
4SimulationResultofTemperaturecharacteristicFig.
5SimulationResultoftransientresponseTable1showsthesimulationresult.
Aftercomparingthisworkwithothers,thepowerdissipationofthecircuitissuperiortoothers.
Table1AnalysisofSimulationResultPerformanceParameterThiswork[2][3]SupplyCurrent(uA)19.
8uA24.
6uA50uATemperatureCoefficient(ppm/℃)21ppm/℃13.
29ppm/℃15ppm/℃Phase1Phase2Phase2Phase2C1C2CLVBE1VBE2VbgEN_Phase2F5.
SummaryAfteranalyzinganddiscussingtheapplicationanddevelopmentdirectionofbandgapreference,thispaperpresentsalowpowerratio-capacitancebandgapreferencecircuit,whichcanreducepowerdissipation.
ThecircuitadoptscascadeOp-ampwhichcanimproveresponsespeedandaccuracyofthecircuit.
Simulationresultshowsthatthetotalpowerdissipationis19.
8uAat3.
3V,low-frequencynoiseachieves3.
9uV/√Hzandthetemperaturecoefficientofthecircuitis21ppm/℃.
References[1].
ZhouZK,ShiY,HuangZ,etal.
A1.
6-V25-A5-ppm/CCurvature-CompensatedBandgapReference[J].
Circuits&SystemsIRegularPapersIEEETransactionson,Vol.
59(2012)No.
2,p.
677-684.
[2].
ChenPY,ChangSJ,HuangCM,etal.
A1-VCDSbandgapreferencewithouton-chipresistors[C],CircuitsandSystems(APCCAS),2012,p.
160-163.
[3].
YingC,DeCockW,SteyaertM,etal.
A4.
5MGyTID-TolerantCMOSBandgapReferenceCircuitUsingaDynamicBaseLeakageCompensationTechnique[J].
NuclearScienceIEEETransactionson,Vol.
60(2013)No.
4,p.
2819-2824.
[4].
Martinez-NietoA,Sanz-PascualMT,Rosales-QuinteroP,etal.
Abandgapvoltagereferencein0.
18mCMOStechnology[C]//CircuitsandSystems(MWSCAS),2013,p.
97-100.
[5].
VergineT,MichelisS,DeMatteisM,etal.
A65nmCMOStechnologyradiation-hardbandgapreferencecircuit[C]//MicroelectronicsandElectronics(PRIME),2014,p.
1-4.
[6].
MaB,YuF.
ANovel1.
2–V4.
5-ppm/°CCurvature-CompensatedCMOSBandgapReference[J].
Circuits&SystemsIRegularPapersIEEETransactionson,Vol.
61(2014)No.
4,p.
1026-1035.
1,azhangyq_nku@163.
com,1,bgengwd@nankai.
edu.
cn,1,czengxi1213@126.
com2,ayangzx@sigma.
com*Correspondingauthor:WeidongGeng:gengwd@nankai.
edu.
cn.
Keywords:Bandgap,Lowpower,Non-overlapclock,Capacitance-RatioAbstract.
Thispaperpresentsanovellowpowerbandgapreferencecircuit,thebandgapreferenceadoptshalfaperiodworkingmechanism.
Theoperationalamplifierdoesn'tworkduringtheswitchedcapacitornetworksampling.
Andtheoperationalamplifierworksafterthechargebalanced.
Thebandgapreferencerunsdiscontinuously.
Thedesignimplementsinstandard0.
18umCMOSprocess.
Thesimulationresultshowsthat,thecircuitconsumes19.
8uAat3.
3V.
Thenoiseofthecircuitinlowfrequencyachieves3.
9/√andthetemperaturecoefficientis21ppm/℃.
1.
IntroductionReferencevoltageblockisthefundamentalpartofthepowermoduleofelectricalsystem,itsperformanceparameters,suchasaccuracystabilityandsoon,decidestheperformanceoftheelectricalsystem.
Inrecentyears,especially,electronicproductsbecomeminiaturizationandportability,referencevoltageblockneedslowerpowerdissipation.
Thedesignofthereferencevoltageblockadoptsbandgapreferencestructuregenerally.
In2012,Zhouzekunpresentsahighprecisionhigh-ordercurvature-compensatedbandgapreferencecompatiblewithstandardBiCMOSprocess.
Experimentalresultsoftheproposedbandgapreferencedemonstratethatatemperaturecoefficientof5ppm/℃isrealizedat3.
6Vpowersupplywhiledissipatingamaximumsupplycurrentof25uA[1].
Inthesameyear,Peng-YuChenpresentsabandgapreferencewhichusesalow-gainamplifiertogenerateanaccuratereferencevoltage.
Theaveragepowerconsumptionisapproximately24.
6uWat1Vsupplyvoltage,whichexport434.
2mV[2].
In2013,CaoYingshowsatotal-ionizing-doseradiationtoleranceofbandgapreferenceindeep-submicronCMOStechnology,whichreachesatemperaturecoefficientof15ppm/℃from-40℃to125℃andconsumes50uA[3].
Inthesameyear,A.
Martnez-Nietodesignsalowtemperaturecoefficient,curvature-compensatedCMOSbandgapvoltagereference,whichimplementsinstandard0.
18umCMOSprocesswith1.
8Vpowersupply.
Thecircuithasa4-bittrimmingcircuittocompensateforprocessvariations.
Theoutputvoltageis1.
225VandshowsaTClowerthan2ppm/℃overatemperaturerangeof160℃andthepowerdissipationis620uW[4].
In2014,TommasoVerginepresetsabandgapreferencecircuitwhichhasbeendesignedtobeRadiation-Hardupto1Grad.
Thecircuithasbeendevelopedinacommercial65nmCMOStechnologywith1.
2Vofnominalvoltagesupply.
Thepowerconsumptionis240uWandtheoutputvoltageis331.
6mV[5].
Inthesameyear,BillMaproposesanovelCMOSbandgapreferencewithhigh-ordercurvature-compensationbyusingMOStransistorsoperatinginweakinversionregion.
Theexperimentalresultsshowthatthebandgapreferenceachieves4.
5ppm/℃andconsumes36uAat1.
2V[6].
Allresearchmentionedaboveemploytypicalbandgapreferencestructurewiththemechanismofworkingcontinuously.
Theprincipleofthetypicalbandgapreferencestructureamplifiesthevoltagewithratio-resistance,whichintroducesthethermalnoiseunavoidably.
Inallusiontoproblemsproposed,thispaperpresentsamechanismofhalfaperiodwhichreducestheworkingtimeoftheoperationalamplifiertolessenthepowerdissipation.
Thisbandgapreferencecircuitadoptscapacitancetoamplifythevoltagewithlowerthermalnoise.
2.
Ratio-capacitanceBandgapReferenceCircuitBasedonprincipleofswitchedcapacitance,capacitanceratiobandgapreferencedividedtheworkingtimeintotwonon-overlappartsemployingtwonon-overlapclock,asshowedinFig.
1.
ThecapacitanceC1samplesVBE1-VBE2inthefirstphaseandtheoutputvoltageofthecircuitismaintainedbyloadcapacitance.
Accordingtotheprincipleofchargeconservation,thechargeofcapacitanceC1transferstocapacitanceC2.
ThemultipleofC1toC2willamplifythevalueofVBE1-VBE2whiletheswitchattheoutputendclosingwiththeoutputvoltageVbg.
Fig.
1CapacitanceRatioBandgapReference3.
HalfaperiodWorkingmechanismCapacitanceratiobandgapreferencedividestheworkingtimeintotwoparts.
Theoperationalamplifierisusedasabufferinthefirstphasewhilesamplingthedifferenceofvoltage.
Accordingtotheprincipleofchargeconservation,thecircuitmultiplythedifferenceofvoltage.
Thestableoutputreferencevoltageiscomposedofthenegativetemperaturecoefficientofthevoltageandthemagnifiedpositivetemperaturecoefficientofthevoltage.
Powerdissipationoftheoperationalamplifieristhemainsourceinthebandgapreference.
Auniversalmethodoflow-powerdesignistoreducethepowerconsumption.
Reducingtheworkingtimeisalsoaneffectivewaytodesignalowpowerbandgapreference.
Theoperationalamplifierinthecapacitanceratiobandgapreferencedoesn'tneedtoworkinthefirstphasewithoutlossofchargeinthesamplingcapacitor.
Andtheoperationalamplifierinthebandgapreferenceworksinclosedloop,exportingthestableoutputvoltageasreferencevoltagedirectlyinthesecondphase.
Thispapersavesthepowerdissipationoftheoperationalamplifierinthefirstphasewithclosedoperationalamplifier.
Bottomplatesamplingtechnique,replacingtheclosedoperationalamplifierusedasabuffer,hasbeenusedinthedesignforsavingthechargeatthenegativeport.
Afteroptimizingthestructure,showedinFig.
1forlowerpowerdissipation,enablesignalEN_Phase2hasbeenaddedtotheoperationalamplifier,asFig.
2.
ThechargeinthecapacitanceC1transferstothecapacitanceC2inthesecondphasewiththeopeningoperationalamplifier.
Forthetimebeing,theoutputendofoperationalamplifierlinkstotheoutputendofthecircuitwhentheoutputvoltageoftheoperationalamplifierbecomesthereferencevoltageVbg.
Vbg=VBE1+nVBE.
(1)Fig.
2Half-periodCapacitorRatioBandgapReferencePhase1Phase2Phase2Phase2C1C2CLVBE1VBE2VbgPhase1Phase1Phase2Phase2Phase2C1C2CLVBE1VBE2VbgEN_Phase2Theoperationalamplifierinthebandgapreferenceadoptsthemechanismofhalfcycleworktimewhichcanreducethepowerconsumptionavailably.
Afterturningontheoperationalamplifier,thecircuitchargetheparasiticcapacitance,whichdecreasesthesettlingtimeoftheoutputvoltagewiththehalfaperiodworkingmechanism.
Sothehalfaperiodworkingmechanismneedsfasteroperationalamplifierwhichwillincreasethepowerconsumptionofthecircuit.
Apeakvalueoftheoutputvoltagewillbeproducedbecauseofnon-overlapclock,whichinfluencestheaccuracyofthebandgapreference.
AsshownasFig.
3,theenablesignalEN_Phase2hasbeenoptimizedtoresolvetheproblemoftheparasiticcapacitance.
Ensuringtheparasiticcapacitancecharged,theenablesignalEN_Phase2Fwillbeenabledadvanced.
Fig.
3OptimizedHalf-periodCapacitorRatioBandgapReference4.
SimulationExperimentsandAnalysisConsideringthecurrentapplyingtotheloadoutsideandtheloadcapacitanceinside,thespeedoftheclockshouldbechosen.
Theparasiticcapacitancesshouldreachthebalancedstatebeforetheoperationalamplifierworkingintheclosedloop.
Aheadofthesecondphase,theoperationalamplifierhasbeenenabledtoensurestableoutputvoltagewhilethecapacitanceratiomultipliesthevoltage.
Inlogic,thefallingedgeoftheEN_Phase2FissynchronizedwiththerisingedgeofthePhase2but,actually,thefallingedgeoftheEN_Phase2Fenablestheoperationalamplifierinadvance.
ThetimeinadvanceofEN_Phase2Fcanbedecidedconsideringthevalueoftheparasiticcapacitance.
Inthispaper,theratioofcapacitancebetweenC1andC2iselectedas4,aftertakingareaofthechip,powerconsumedbygeneratingtheVBE1andVBE2andthenoisecharacterofthecapacitance.
Thetemperaturecharacteristicofthecapacitanceratiobandgapreferencefrom-20℃to80℃hasbeenshownasFig.
4withthevarietyof7mVattheendofthecircuit.
Theoutputvoltagecanbestableat10.
75uswithsteadypowersupply,asshowninFig.
5.
Fig.
4SimulationResultofTemperaturecharacteristicFig.
5SimulationResultoftransientresponseTable1showsthesimulationresult.
Aftercomparingthisworkwithothers,thepowerdissipationofthecircuitissuperiortoothers.
Table1AnalysisofSimulationResultPerformanceParameterThiswork[2][3]SupplyCurrent(uA)19.
8uA24.
6uA50uATemperatureCoefficient(ppm/℃)21ppm/℃13.
29ppm/℃15ppm/℃Phase1Phase2Phase2Phase2C1C2CLVBE1VBE2VbgEN_Phase2F5.
SummaryAfteranalyzinganddiscussingtheapplicationanddevelopmentdirectionofbandgapreference,thispaperpresentsalowpowerratio-capacitancebandgapreferencecircuit,whichcanreducepowerdissipation.
ThecircuitadoptscascadeOp-ampwhichcanimproveresponsespeedandaccuracyofthecircuit.
Simulationresultshowsthatthetotalpowerdissipationis19.
8uAat3.
3V,low-frequencynoiseachieves3.
9uV/√Hzandthetemperaturecoefficientofthecircuitis21ppm/℃.
References[1].
ZhouZK,ShiY,HuangZ,etal.
A1.
6-V25-A5-ppm/CCurvature-CompensatedBandgapReference[J].
Circuits&SystemsIRegularPapersIEEETransactionson,Vol.
59(2012)No.
2,p.
677-684.
[2].
ChenPY,ChangSJ,HuangCM,etal.
A1-VCDSbandgapreferencewithouton-chipresistors[C],CircuitsandSystems(APCCAS),2012,p.
160-163.
[3].
YingC,DeCockW,SteyaertM,etal.
A4.
5MGyTID-TolerantCMOSBandgapReferenceCircuitUsingaDynamicBaseLeakageCompensationTechnique[J].
NuclearScienceIEEETransactionson,Vol.
60(2013)No.
4,p.
2819-2824.
[4].
Martinez-NietoA,Sanz-PascualMT,Rosales-QuinteroP,etal.
Abandgapvoltagereferencein0.
18mCMOStechnology[C]//CircuitsandSystems(MWSCAS),2013,p.
97-100.
[5].
VergineT,MichelisS,DeMatteisM,etal.
A65nmCMOStechnologyradiation-hardbandgapreferencecircuit[C]//MicroelectronicsandElectronics(PRIME),2014,p.
1-4.
[6].
MaB,YuF.
ANovel1.
2–V4.
5-ppm/°CCurvature-CompensatedCMOSBandgapReference[J].
Circuits&SystemsIRegularPapersIEEETransactionson,Vol.
61(2014)No.
4,p.
1026-1035.
VoLLcloud7折月付$3，香港CMI云服务器原生IP解锁，香港VoLLcloud
vollcloud怎么样?vollcloud LLC创立于2020年，是一家以互联网基础业务服务为主的 技术型企业，运营全球数据中心业务。VoLLcloud LLC针对新老用户推出全场年付产品7折促销优惠，共30个，机会难得，所有产品支持3日内无条件退款，同时提供产品免费体验。目前所有产品中，“镇店之宝”产品性价比高，适用大部分用户基础应用，卖的也是最好，同时，在这里感谢新老用户的支持和信任，我们...
DiyVM（50元起）老牌商家,香港沙田CN2直连vps/不限流量/五折终身优惠
diyvm怎么样?diyvm是一家国内成立时间比较久的主机商家了，大约在6年前站长曾经用过他家的美国机房的套餐，非常稳定，适合做站，目前商家正在针对香港沙田机房的VPS进行促销，给的是五折优惠，续费同价，香港沙田机房走的是CN2直连的线路，到大陆地区的速度非常好，DiyVM商家采用小带宽不限流量的形式，带宽2Mbps起步，做站完全够用，有需要的朋友可以入手。diyvm优惠码：五折优惠码：OFF50...
半月湾($59.99/年),升级带宽至200M起步 三网CN2 GIA线路
在前面的文章中就有介绍到半月湾Half Moon Bay Cloud服务商有提供洛杉矶DC5数据中心云服务器，这个堪比我们可能熟悉的某服务商，如果我们有用过的话会发现这个服务商的价格比较贵，而且一直缺货。这里，于是半月湾服务商看到机会来了，于是有新增同机房的CN2 GIA优化线路。在之前的文章中介绍到Half Moon Bay Cloud DC5机房且进行过测评。这次的变化是从原来基础的年付49....
ykt 178zx com cn为你推荐
-
免费制作qq空间怎样免费制作漂亮的QQ空间？google地球打不开谷歌地球为啥打不开了？急！！！手机游戏排行榜20152017年的手游排行榜？公章制作word里如何制作公章？照片转手绘如何把真人图片用photoshop做成手绘图片数码资源网安卓有没有可以离线刷题的软件？安卓应用平台有没有什么安卓游戏都能找到的应用商店或者游戏中心mate8价格华为mate8市场价多少安全漏洞如何发现系统安全漏洞网络广告投放怎样在网络上进行广告的投放？