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SiA110DJwww.
vishay.
comVishaySiliconixS18-0012-Rev.
A,15-Jan-181DocumentNumber:76002Fortechnicalquestions,contact:pmostechsupport@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000N-Channel100V(D-S)MOSFETFEATURESTrenchFETGenIVpowerMOSFETTunedforthelowestRDS-Qoss100%RgandUIStestedMaterialcategorization:fordefinitionsofcompliancepleaseseewww.
vishay.
com/doc99912APPLICATIONSPrimarysideswitchDC/DCconverterMotordriveswitchBoostconverterLEDbacklightingNotesa.
Packagelimitedb.
Surfacemountedon1"x1"FR4boardc.
t=5sd.
Seesolderprofile(www.
vishay.
com/ppg73257).
ThePowerPAKSC-70isaleadlesspackage.
Theendoftheleadterminalisexposedcopper(notplated)asaresultofthesingulationprocessinmanufacturing.
Asolderfilletattheexposedcoppertipcannotbeguaranteedandisnotrequiredtoensureadequatebottomsidesolderinterconnectione.
Reworkconditions:manualsolderingwithasolderingironisnotrecommendedforleadlesscomponentsf.
Maximumundersteadystateconditionsis80°C/WPRODUCTSUMMARYVDS(V)100RDS(on)max.
()atVGS=10V0.
055RDS(on)max.
()atVGS=7.
5V0.
072Qgtyp.
(nC)6.
5ID(A)a12ConfigurationSinglePowerPAKSC-70-6LSingle3G2D1DS4D5D6BottomView2.
05mm2.
05mm1TopViewS7N-ChannelMOSFETGDSORDERINGINFORMATIONPackagePowerPAKSC-70Lead(Pb)-freeandhalogen-freeSiA110DJ-T1-GE3ABSOLUTEMAXIMUMRATINGS(TA=25°C,unlessotherwisenoted)PARAMETERSYMBOLLIMITUNITDrain-sourcevoltageVDS100VGate-sourcevoltageVGS±20Continuousdraincurrent(TJ=150°C)TC=25°CID12aATC=70°C10TA=25°C5.
4b,cTA=70°C4.
3b,cPulseddraincurrent(t=100μs)IDM20Continuoussource-draindiodecurrentTC=25°CIS12aTA=70°C2.
9b,cSinglepulseavalanchecurrentL=0.
1mHIAS10SinglepulseavalancheenergyEAS5mJMaximumpowerdissipationTC=25°CPD19WTC=70°C12TA=25°C3.
5b,cTA=70°C2.
2b,cOperatingjunctionandstoragetemperaturerangeTJ,Tstg-55to+150°CSolderingrecommendations(peaktemperature)d,e260THERMALRESISTANCERATINGSPARAMETERSYMBOLTYPICALMAXIMUMUNITMaximumjunction-to-ambientb,ft5sRthJA2836°C/WMaximumjunction-to-case(drain)SteadystateRthJC5.
36.
5SiA110DJwww.
vishay.
comVishaySiliconixS18-0012-Rev.
A,15-Jan-182DocumentNumber:76002Fortechnicalquestions,contact:pmostechsupport@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000Notesa.
Pulsetest:pulsewidth300μs,dutycycle2%b.
Guaranteedbydesign,notsubjecttoproductiontestingStressesbeyondthoselistedunder"AbsoluteMaximumRatings"maycausepermanentdamagetothedevice.
Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedintheoperationalsectionsofthespecificationsisnotimplied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectdevicereliability.
SPECIFICATIONS(TJ=25°C,unlessotherwisenoted)PARAMETERSYMBOLTESTCONDITIONSMIN.
TYP.
MAX.
UNITStaticDrain-sourcebreakdownvoltageVDSVGS=0V,ID=250μA100--VVDStemperaturecoefficientVDS/TJID=10mA-57-mV/°CVGS(th)temperaturecoefficientVGS(th)/TJID=250μA--7.
2-Gate-sourcethresholdvoltageVGS(th)VDS=VGS,ID=250μA2-4VGate-sourceleakageIGSSVDS=0V,VGS=±20V--100nAZerogatevoltagedraincurrentIDSSVDS=100V,VGS=0V--1μAVDS=100V,VGS=0V,TJ=70°C--10On-statedraincurrentaID(on)VDS10V,VGS=10V10--ADrain-sourceon-stateresistanceaRDS(on)VGS=10V,ID=4A-0.
0460.
055VGS=7.
5V,ID=4A-0.
0510.
072ForwardtransconductanceagfsVDS=15V,ID=10A-25-SDynamicbInputcapacitanceCissVDS=50V,VGS=0V,f=1MHz-550-pFOutputcapacitanceCoss-50-ReversetransfercapacitanceCrss-7-TotalgatechargeQgVDS=50V,VGS=10V,ID=4A-8.
513nCVDS=50V,VGS=7.
5V,ID=4A-6.
510Gate-sourcechargeQgs-2.
5-Gate-drainchargeQgd-1.
5-OutputchargeQossVDS=50V,VGS=0V-8-GateresistanceRgf=1MHz0.
31.
32.
6Turn-ondelaytimetd(on)VDD=50V,RL=12.
5,ID4A,VGEN=10V,Rg=1-1020nsRisetimetr-510Turn-offdelaytimetd(off)-1430Falltimetf-510Turn-ondelaytimetd(on)VDD=50V,RL=12.
5,ID4A,VGEN=7.
5V,Rg=1-1120Risetimetr-510Turn-offdelaytimetd(off)-1430Falltimetf-510Drain-SourceBodyDiodeCharacteristicsContinuoussource-draindiodecurrentISTC=25°C--12APulsediodeforwardcurrentISM--20BodydiodevoltageVSDIS=4A,VGS=0V-0.
851.
2VBodydiodereverserecoverytimetrrIF=4A,di/dt=100A/μs,TJ=25°C-50100nsBodydiodereverserecoverychargeQrr-55110nCReverserecoveryfalltimeta-27-nsReverserecoveryrisetimetb-23-SiA110DJwww.
vishay.
comVishaySiliconixS18-0012-Rev.
A,15-Jan-183DocumentNumber:76002Fortechnicalquestions,contact:pmostechsupport@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)OutputCharacteristicsOn-Resistancevs.
DrainCurrentandGateVoltageGateChargeTransferCharacteristicsCapacitanceOn-Resistancevs.
JunctionTemperature101001000100000510152000.
511.
522.
53AxisTitle1stline2ndline2ndlineID-DrainCurrent(A)VDS-Drain-to-SourceVoltage(V)2ndlineVGS=10Vthru6VVGS=4VVGS=5V101001000100000.
030.
040.
050.
060.
07048121620AxisTitle1stline2ndline2ndlineRDS(on)-On-Resistance(Ω)ID-DrainCurrent(A)2ndlineVGS=10VVGS=7.
5V1010010001000002468100246810AxisTitle1stline2ndline2ndlineVGS-Gate-to-SourceVoltage(V)Qg-TotalGateCharge(nC)2ndlineVDS=50VVDS=75VVDS=25VID=4A101001000100000481216200123456AxisTitle1stline2ndline2ndlineID-DrainCurrent(A)VGS-Gate-to-SourceVoltage(V)2ndlineTC=25°CTC=-55°CTC=125°C101001000100000100200300400500600700020406080100AxisTitle1stline2ndline2ndlineC-Capacitance(pF)VDS-Drain-to-SourceVoltage(V)2ndlineCrssCossCiss101001000100000.
40.
60.
81.
01.
21.
41.
61.
82.
02.
2-50-250255075100125150AxisTitle1stline2ndline2ndlineRDS(on)-On-Resistance(Normalized)TJ-JunctionTemperature(°C)lineID=4AVGS=10VVGS=7.
5VSiA110DJwww.
vishay.
comVishaySiliconixS18-0012-Rev.
A,15-Jan-184DocumentNumber:76002Fortechnicalquestions,contact:pmostechsupport@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)Source-DrainDiodeForwardVoltageThresholdVoltageOn-Resistancevs.
Gate-to-SourceVoltageSinglePulsePower,Junction-to-AmbientSafeOperatingArea,Junction-to-Ambient101001000100000.
111010000.
20.
40.
60.
81.
01.
2AxisTitle1stline2ndline2ndlineIS-SourceCurrent(A)VSD-Source-to-DrainVoltage(V)2ndlineTJ=150°CTJ=25°C101001000100001.
82.
02.
22.
42.
62.
83.
03.
23.
4-50-250255075100125150AxisTitle1stline2ndlineVGS(th)(V)TJ-Temperature(°C)2ndlineID=250μA1010010001000000.
050.
10.
150.
20246810AxisTitle1stline2ndline2ndlineRDS(on)-On-Resistance(Ω)VGS-Gate-to-SourceVoltage(V)2ndlineTJ=25°CTJ=125°CID=4A101001000100000510152025300.
0010.
010.
11101001000AxisTitle1stline2ndline2ndlinePower(W)Time(s)2ndline101001000100000.
010.
11101000.
11101001000AxisTitle1stline2ndline2ndlineID-DrainCurrent(A)VDS-Drain-to-SourceVoltage(V)(1)VGS>minimumVGSatwhichRDS(on)isspecifiedLimitedbyRDS(on)(1)TA=25°CSinglepulse100ms10ms1ms100μs1s10sDCIDMlimitedID(ON)limitedBVdsslimitedSiA110DJwww.
vishay.
comVishaySiliconixS18-0012-Rev.
A,15-Jan-185DocumentNumber:76002Fortechnicalquestions,contact:pmostechsupport@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)CurrentDeratingaPower,Junction-to-CaseNotea.
ThepowerdissipationPDisbasedonTJmax.
=25°C,usingjunction-to-casethermalresistance,andismoreusefulinsettlingtheupperdissipationlimitforcaseswhereadditionalheatsinkingisused.
Itisusedtodeterminethecurrentrating,whenthisratingfallsbelowthepackagelimit.
1010010001000004812160255075100125150AxisTitle1stline2ndline2ndlineID-DrainCurrent(A)TC-CaseTemperature(°C)2ndlinePackagelimited1010010001000005101520250255075100125150AxisTitle1stline2ndline2ndlinePower(W)TC-CaseTemperature(°C)2ndlineSiA110DJwww.
vishay.
comVishaySiliconixS18-0012-Rev.
A,15-Jan-186DocumentNumber:76002Fortechnicalquestions,contact:pmostechsupport@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)NormalizedThermalTransientImpedance,Junction-to-AmbientNormalizedThermalTransientImpedance,Junction-to-CaseVishaySiliconixmaintainsworldwidemanufacturingcapability.
Productsmaybemanufacturedatoneofseveralqualifiedlocations.
ReliabilitydataforSiliconTechnologyandPackageReliabilityrepresentacompositeofallqualifiedlocations.
Forrelateddocumentssuchaspackage/tapedrawings,partmarking,andreliabilitydata,seewww.
vishay.
com/ppg76002.
10-310-2110100010-110-41000.
20.
10.
050.
02SquareWavePulseDuration(s)NormalizedEffectiveTransientThermalImpedance10.
10.
01Singlepulset1t2Notes:PDM1.
DutyCycle,D=2.
PerUnitBase=RthJA=80C/W3.
TJM-TA=PDMZthJA(t)t1t24.
SurfaceMountedDutycycle=0.
510-310-210-410.
10.
20.
1Dutycycle=0.
5SquareWavePulseDuration(s)NormalizedEffectiveTransientThermalImpedance0.
02Singlepulse0.
0510-1VishaySiliconixPackageInformationDocumentNumber:7300106-Aug-07www.
vishay.
com1PowerPAKSC70-6LDIMSINGLEPADDUALPADMILLIMETERSINCHESMILLIMETERSINCHESMinNomMaxMinNomMaxMinNomMaxMinNomMaxA0.
6750.
750.
800.
0270.
0300.
0320.
6750.
750.
800.
0270.
0300.
032A10-0.
050-0.
0020-0.
050-0.
002b0.
230.
300.
380.
0090.
0120.
0150.
230.
300.
380.
0090.
0120.
015C0.
150.
200.
250.
0060.
0080.
0100.
150.
200.
250.
0060.
0080.
010D1.
982.
052.
150.
0780.
0810.
0851.
982.
052.
150.
0780.
0810.
085D10.
850.
951.
050.
0330.
0370.
0410.
5130.
6130.
7130.
0200.
0240.
028D20.
1350.
2350.
3350.
0050.
0090.
013E1.
982.
052.
150.
0780.
0810.
0851.
982.
052.
150.
0780.
0810.
085E11.
401.
501.
600.
0550.
0590.
0630.
850.
951.
050.
0330.
0370.
041E20.
3450.
3950.
4450.
0140.
0160.
018E30.
4250.
4750.
5250.
0170.
0190.
021e0.
65BSC0.
026BSC0.
65BSC0.
026BSCK0.
275TYP0.
011TYP0.
275TYP0.
011TYPK10.
400TYP0.
016TYP0.
320TYP0.
013TYPK20.
240TYP0.
009TYP0.
252TYP0.
010TYPK30.
225TYP0.
009TYPK40.
355TYP0.
014TYPL0.
1750.
2750.
3750.
0070.
0110.
0150.
1750.
2750.
3750.
0070.
0110.
015T0.
050.
100.
150.
0020.
0040.
006ECN:C-07431Rev.
C,06-Aug-07DWG:5934E2BACKSIDEVIEWOFSINGLEBACKSIDEVIEWOFDUALNotes:1.
Alldimensionsareinmillimeters2.
Packageoutlineexclusiveofmoldflashandmetalburr3.
PackageoutlineinclusiveofplatingPIN1PIN6PIN5PIN4PIN2PIN3AZDETAILZzDEK1K2CA1K3K2K2ebbePIN6PIN5PIN4PIN1PIN3PIN2E1E1E1LLK4KKKD1D2D1D1K1E3ApplicationNote826VishaySiliconixDocumentNumber:70486www.
vishay.
comRevision:21-Jan-0811APPLICATIONNOTERECOMMENDEDPADLAYOUTFORPowerPAKSC70-6LSingle10.
300(0.
012)0.
350(0.
014)2.
200(0.
087)1.
500(0.
059)0.
650(0.
026)0.
950(0.
037)0.
300(0.
012)0.
355(0.
014)0.
235(0.
009)0.
475(0.
019)0.
870(0.
034)0.
275(0.
011)0.
350(0.
014)0.
550(0.
022)0.
650(0.
026)Dimensionsinmm/(Inches)ReturntoIndexLegalDisclaimerNoticewww.
vishay.
comVishayRevision:01-Jan-20211DocumentNumber:91000DisclaimerALLPRODUCT,PRODUCTSPECIFICATIONSANDDATAARESUBJECTTOCHANGEWITHOUTNOTICETOIMPROVERELIABILITY,FUNCTIONORDESIGNOROTHERWISE.
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