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VishaySiliconixSiA436DJNewProductDocumentNumber:63535S11-2242-Rev.
A,14-Nov-11www.
vishay.
com1Thisdocumentissubjecttochangewithoutnotice.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000N-Channel8V(D-S)MOSFETFEATURESHalogen-freeAccordingtoIEC61249-2-21DefinitionTrenchFETPowerMOSFETThermallyEnhancedPowerPAKSC-70Package-SmallFootprintArea100%RgTestedComplianttoRoHSDirective2002/95/ECAPPLICATIONSLoadSwitchforPortableApplicationssuchasSmartPhones,TabletPCsandMobileComputing-LowVoltageGateDrive-LowVoltageDrop-PowerSwitchforICsNotes:a.
Packagelimitedb.
Surfacemountedon1"x1"FR4board.
c.
t=5s.
d.
Seesolderprofile(www.
vishay.
com/ppg73257).
ThePowerPAKSC-70isaleadlesspackage.
Theendoftheleadterminalisexposedcopper(notplated)asaresultofthesingulationprocessinmanufacturing.
Asolderfilletattheexposedcoppertipcannotbeguaranteedandisnotrequiredtoensureadequatebottomsidesolderinterconnection.
e.
Reworkconditions:manualsolderingwithasolderingironisnotrecommendedforleadlesscomponents.
f.
Maximumundersteadystateconditionsis80°C/W.
PRODUCTSUMMARYVDS(V)RDS(on)(Ω)Max.
ID(A)aQg(Typ.
)80.
0094atVGS=4.
5V1215nC0.
0105atVGS=2.
5V120.
0125atVGS=1.
8V120.
0180atVGS=1.
5V120.
0360atVGS=1.
2V12ABSOLUTEMAXIMUMRATINGS(TA=25°C,unlessotherwisenoted)ParameterSymbolLimitUnitDrain-SourceVoltageVDS8VGate-SourceVoltageVGS±5ContinuousDrainCurrent(TJ=150°C)TC=25°CID12aATC=70°C12aTA=25°C12a,b,cTA=70°C12a,b,cPulsedDrainCurrent(t=300s)IDM50ContinuousSource-DrainDiodeCurrentTC=25°CIS12aTA=25°C2.
9b,cMaximumPowerDissipationTC=25°CPD19WTC=70°C12TA=25°C3.
5b,cTA=70°C2.
2b,cOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CSolderingRecommendations(PeakTemperature)d,e260THERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitMaximumJunction-to-Ambientb,ft≤5sRthJA2836°C/WMaximumJunction-to-Case(Drain)SteadyStateRthJC5.
36.
5MarkingCodeXXXAOXLotTraceabilityandDatecodePart#codeOrderingInformation:SiA436DJ-T1-GE3(Lead(Pb)-freeandHalogen-free)N-ChannelMOSFETGDSPowerPAKSC-70-6L-Single654123DDDDGSS2.
05mm2.
05mmwww.
vishay.
com2DocumentNumber:63535S11-2242-Rev.
A,14-Nov-11VishaySiliconixSiA436DJNewProductThisdocumentissubjecttochangewithoutnotice.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000Notes:a.
Pulsetest;pulsewidth≤300s,dutycycle≤2%b.
Guaranteedbydesign,notsubjecttoproductiontesting.
Stressesbeyondthoselistedunder"AbsoluteMaximumRatings"maycausepermanentdamagetothedevice.
Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedintheoperationalsectionsofthespecificationsisnotimplied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectdevicereliability.
SPECIFICATIONS(TJ=25°C,unlessotherwisenoted)ParameterSymbolTestConditionsMin.
Typ.
Max.
UnitStaticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=250A8VVDSTemperatureCoefficientΔVDS/TJID=250A11mV/°CVGS(th)TemperatureCoefficientΔVGS(th)/TJ-2.
5Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=250A0.
350.
8VGate-SourceLeakageIGSSVDS=0V,VGS=±5V±100nAZeroGateVoltageDrainCurrentIDSSVDS=8V,VGS=0V1AVDS=8V,VGS=0V,TJ=55°C10On-StateDrainCurrentaID(on)VDS≥5V,VGS=4.
5V20ADrain-SourceOn-StateResistanceaRDS(on)VGS=4.
5V,ID=15.
7A0.
00780.
0094ΩVGS=2.
5V,ID=14.
9A0.
00870.
0105VGS=1.
8V,ID=13.
6A0.
01040.
0125VGS=1.
5V,ID=2.
5A0.
01200.
0180VGS=1.
2V,ID=1.
5A0.
01800.
0360ForwardTransconductanceagfsVDS=4V,ID=15.
7A70SDynamicbInputCapacitanceCissVDS=4V,VGS=0V,f=1MHz1508pFOutputCapacitanceCoss535ReverseTransferCapacitanceCrss321TotalGateChargeQgVDS=4V,VGS=5V,ID=15.
7A16.
825.
2nCVDS=4V,VGS=4.
5V,ID=15.
7A1523Gate-SourceChargeQgs1.
7Gate-DrainChargeQgd0.
9GateResistanceRgf=1MHz0.
52.
55ΩTurn-onDelayTimetd(on)VDD=4V,RL=0.
4ΩID10A,VGEN=4.
5V,Rg=1Ω1120nsRiseTimetr1020Turn-OffDelayTimetd(off)3045FallTimetf816Turn-onDelayTimetd(on)VDD=4V,RL=0.
4ΩID10A,VGEN=5V,Rg=1Ω1020RiseTimetr1020Turn-OffDelayTimetd(off)3045FallTimetf816Drain-SourceBodyDiodeCharacteristicsContinuousSource-DrainDiodeCurrentISTC=25°C12APulseDiodeForwardCurrentISM50BodyDiodeVoltageVSDIS=10A,VGS=0V0.
731.
2VBodyDiodeReverseRecoveryTimetrrIF=10A,di/dt=100A/s,TJ=25°C1020nsBodyDiodeReverseRecoveryChargeQrr14nCReverseRecoveryFallTimeta4nsReverseRecoveryRiseTimetb6DocumentNumber:63535S11-2242-Rev.
A,14-Nov-11www.
vishay.
com3VishaySiliconixSiA436DJNewProductThisdocumentissubjecttochangewithoutnotice.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)OutputCharacteristicsOn-Resistancevs.
DrainCurrentandGateVoltageGateCharge0102030405000.
511.
52ID-DrainCurrent(A)VDS-Drain-to-SourceVoltage(V)VGS=5Vthru2VVGS=1VVGS=1.
5V0.
0050.
010.
0150.
020.
02501020304050RDS(on)-On-Resistance(Ω)ID-DrainCurrent(A)VGS=2.
5VVGS=1.
8VVGS=1.
5VVGS=1.
2VVGS=4.
5V01234505101520VGS-Gate-to-SourceVoltage(V)Qg-TotalGateCharge(nC)VDS=6.
4VID=15.
7AVDS=2VVDS=4VTransferCharacteristicsCapacitanceOn-Resistancevs.
JunctionTemperature0510152000.
30.
60.
91.
2ID-DrainCurrent(A)VGS-Gate-to-SourceVoltage(V)TC=25°CTC=125°CTC=-55°C041082012301640205002468C-Capacitance(pF)VDS-Drain-to-SourceVoltage(V)CissCossCrss0.
70.
91.
11.
31.
5-50-250255075100125150RDS(on)-On-Resistance(Normalized)TJ-JunctionTemperature(°C)ID=15.
7AVGS=4.
5VVGS=2.
5Vwww.
vishay.
com4DocumentNumber:63535S11-2242-Rev.
A,14-Nov-11VishaySiliconixSiA436DJNewProductThisdocumentissubjecttochangewithoutnotice.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)Source-DrainDiodeForwardVoltageThresholdVoltage0.
11100.
00.
20.
40.
60.
81.
0IS-SourceCurrent(A)VSD-Source-to-DrainVoltage(V)TJ=150°CTJ=150°CTJ=25°C0.
10.
250.
40.
550.
7-50-250255075100125150VGS(th)(V)TJ-Temperature(°C)ID=250μAOn-Resistancevs.
Gate-to-SourceVoltageSinglePulsePower(Junction-to-Ambient)0.
0050.
010.
0150.
020.
025012345RDS(on)-On-Resistance(Ω)VGS-Gate-to-SourceVoltage(V)TJ=125°CTJ=25°CID=15.
7APower(W)Time(s)1010000.
10.
010.
0011001051015202530SafeOperatingArea,Junction-to-Ambient0.
010.
11101000.
1110ID-DrainCurrent(A)VDS-Drain-to-SourceVoltage(V)*VGS>minimumVGSatwhichRDS(on)isspecified100msLimitedbyRDS(on)*1msTA=25°CSinglePulseBVDSSLimited10ms100μs1s,10sDCDocumentNumber:63535S11-2242-Rev.
A,14-Nov-11www.
vishay.
com5VishaySiliconixSiA436DJNewProductThisdocumentissubjecttochangewithoutnotice.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)*ThepowerdissipationPDisbasedonTJ(max.
)=150°C,usingjunction-to-casethermalresistance,andismoreusefulinsettlingtheupperdissipationlimitforcaseswhereadditionalheatsinkingisused.
Itisusedtodeterminethecurrentrating,whenthisratingfallsbelowthepackagelimit.
CurrentDerating*0112132420255075100125150ID-DrainCurrent(A)TC-CaseTemperature(°C)PackageLimitedPowerDerating,Junction-to-Case061218240255075100125150Power(W)TC-CaseTemperature(°C)PowerDerating,Junction-to-Ambient0.
00.
51.
01.
52.
00255075100125150Power(W)TA-AmbientTemperature(°C)www.
vishay.
com6DocumentNumber:63535S11-2242-Rev.
A,14-Nov-11VishaySiliconixSiA436DJNewProductThisdocumentissubjecttochangewithoutnotice.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)VishaySiliconixmaintainsworldwidemanufacturingcapability.
Productsmaybemanufacturedatoneofseveralqualifiedlocations.
ReliabilitydataforSiliconTechnologyandPackageReliabilityrepresentacompositeofallqualifiedlocations.
Forrelateddocumentssuchaspackage/tapedrawings,partmarking,andreliabilitydata,seewww.
vishay.
com/ppg63535.
NormalizedThermalTransientImpedance,Junction-to-Ambient10-310-2110100010-110-41000.
20.
10.
05SquareWavePulseDuration(s)NormalizedEffectiveTransientThermalImpedance10.
10.
01SinglePulset1t2Notes:PDM1.
DutyCycle,D=2.
PerUnitBase=RthJA=80°C/W3.
TJM-TA=PDMZthJA(t)t1t24.
SurfaceMountedDutyCycle=0.
50.
02NormalizedThermalTransientImpedance,Junction-to-Case10.
10.
2DutyCycle=0.
5SquareWavePulseDuration(s)NormalizedEffectiveTransientThermalImpedance0.
0010.
10.
010.
00010.
050.
02SinglePulse0.
1VishaySiliconixPackageInformationDocumentNumber:7300106-Aug-07www.
vishay.
com1PowerPAKSC70-6LDIMSINGLEPADDUALPADMILLIMETERSINCHESMILLIMETERSINCHESMinNomMaxMinNomMaxMinNomMaxMinNomMaxA0.
6750.
750.
800.
0270.
0300.
0320.
6750.
750.
800.
0270.
0300.
032A10-0.
050-0.
0020-0.
050-0.
002b0.
230.
300.
380.
0090.
0120.
0150.
230.
300.
380.
0090.
0120.
015C0.
150.
200.
250.
0060.
0080.
0100.
150.
200.
250.
0060.
0080.
010D1.
982.
052.
150.
0780.
0810.
0851.
982.
052.
150.
0780.
0810.
085D10.
850.
951.
050.
0330.
0370.
0410.
5130.
6130.
7130.
0200.
0240.
028D20.
1350.
2350.
3350.
0050.
0090.
013E1.
982.
052.
150.
0780.
0810.
0851.
982.
052.
150.
0780.
0810.
085E11.
401.
501.
600.
0550.
0590.
0630.
850.
951.
050.
0330.
0370.
041E20.
3450.
3950.
4450.
0140.
0160.
018E30.
4250.
4750.
5250.
0170.
0190.
021e0.
65BSC0.
026BSC0.
65BSC0.
026BSCK0.
275TYP0.
011TYP0.
275TYP0.
011TYPK10.
400TYP0.
016TYP0.
320TYP0.
013TYPK20.
240TYP0.
009TYP0.
252TYP0.
010TYPK30.
225TYP0.
009TYPK40.
355TYP0.
014TYPL0.
1750.
2750.
3750.
0070.
0110.
0150.
1750.
2750.
3750.
0070.
0110.
015T0.
050.
100.
150.
0020.
0040.
006ECN:C-07431Rev.
C,06-Aug-07DWG:5934E2BACKSIDEVIEWOFSINGLEBACKSIDEVIEWOFDUALNotes:1.
Alldimensionsareinmillimeters2.
Packageoutlineexclusiveofmoldflashandmetalburr3.
PackageoutlineinclusiveofplatingPIN1PIN6PIN5PIN4PIN2PIN3AZDETAILZzDEK1K2CA1K3K2K2ebbePIN6PIN5PIN4PIN1PIN3PIN2E1E1E1LLK4KKKD1D2D1D1K1E3ApplicationNote826VishaySiliconixDocumentNumber:70486www.
vishay.
comRevision:21-Jan-0811APPLICATIONNOTERECOMMENDEDPADLAYOUTFORPowerPAKSC70-6LSingle10.
300(0.
012)0.
350(0.
014)2.
200(0.
087)1.
500(0.
059)0.
650(0.
026)0.
950(0.
037)0.
300(0.
012)0.
355(0.
014)0.
235(0.
009)0.
475(0.
019)0.
870(0.
034)0.
275(0.
011)0.
350(0.
014)0.
550(0.
022)0.
650(0.
026)Dimensionsinmm/(Inches)ReturntoIndexLegalDisclaimerNoticewww.
vishay.
comVishayRevision:02-Oct-121DocumentNumber:91000DisclaimerALLPRODUCT,PRODUCTSPECIFICATIONSANDDATAARESUBJECTTOCHANGEWITHOUTNOTICETOIMPROVERELIABILITY,FUNCTIONORDESIGNOROTHERWISE.
VishayIntertechnology,Inc.
,itsaffiliates,agents,andemployees,andallpersonsactingonitsortheirbehalf(collectively,"Vishay"),disclaimanyandallliabilityforanyerrors,inaccuraciesorincompletenesscontainedinanydatasheetorinanyotherdisclosurerelatingtoanyproduct.
Vishaymakesnowarranty,representationorguaranteeregardingthesuitabilityoftheproductsforanyparticularpurposeorthecontinuingproductionofanyproduct.
Tothemaximumextentpermittedbyapplicablelaw,Vishaydisclaims(i)anyandallliabilityarisingoutoftheapplicationoruseofanyproduct,(ii)anyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages,and(iii)anyandallimpliedwarranties,includingwarrantiesoffitnessforparticularpurpose,non-infringementandmerchantability.
StatementsregardingthesuitabilityofproductsforcertaintypesofapplicationsarebasedonVishay'sknowledgeoftypicalrequirementsthatareoftenplacedonVishayproductsingenericapplications.
Suchstatementsarenotbindingstatementsaboutthesuitabilityofproductsforaparticularapplication.
Itisthecustomer'sresponsibilitytovalidatethataparticularproductwiththepropertiesdescribedintheproductspecificationissuitableforuseinaparticularapplication.
Parametersprovidedindatasheetsand/orspecificationsmayvaryindifferentapplicationsandperformancemayvaryovertime.
Alloperatingparameters,includingtypicalparameters,mustbevalidatedforeachcustomerapplicationbythecustomer'stechnicalexperts.
ProductspecificationsdonotexpandorotherwisemodifyVishay'stermsandconditionsofpurchase,includingbutnotlimitedtothewarrantyexpressedtherein.
Exceptasexpresslyindicatedinwriting,Vishayproductsarenotdesignedforuseinmedical,life-saving,orlife-sustainingapplicationsorforanyotherapplicationinwhichthefailureoftheVishayproductcouldresultinpersonalinjuryordeath.
CustomersusingorsellingVishayproductsnotexpresslyindicatedforuseinsuchapplicationsdosoattheirownrisk.
PleasecontactauthorizedVishaypersonneltoobtainwrittentermsandconditionsregardingproductsdesignedforsuchapplications.
Nolicense,expressorimplied,byestoppelorotherwise,toanyintellectualpropertyrightsisgrantedbythisdocumentorbyanyconductofVishay.
Productnamesandmarkingsnotedhereinmaybetrademarksoftheirrespectiveowners.
MaterialCategoryPolicyVishayIntertechnology,Inc.
herebycertifiesthatallitsproductsthatareidentifiedasRoHS-CompliantfulfillthedefinitionsandrestrictionsdefinedunderDirective2011/65/EUofTheEuropeanParliamentandoftheCouncilofJune8,2011ontherestrictionoftheuseofcertainhazardoussubstancesinelectricalandelectronicequipment(EEE)-recast,unlessotherwisespecifiedasnon-compliant.
PleasenotethatsomeVishaydocumentationmaystillmakereferencetoRoHSDirective2002/95/EC.
WeconfirmthatalltheproductsidentifiedasbeingcomplianttoDirective2002/95/ECconformtoDirective2011/65/EU.
VishayIntertechnology,Inc.
herebycertifiesthatallitsproductsthatareidentifiedasHalogen-FreefollowHalogen-FreerequirementsasperJEDECJS709Astandards.
PleasenotethatsomeVishaydocumentationmaystillmakereferencetotheIEC61249-2-21definition.
WeconfirmthatalltheproductsidentifiedasbeingcomplianttoIEC61249-2-21conformtoJEDECJS709Astandards.
A,14-Nov-11www.
vishay.
com1Thisdocumentissubjecttochangewithoutnotice.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000N-Channel8V(D-S)MOSFETFEATURESHalogen-freeAccordingtoIEC61249-2-21DefinitionTrenchFETPowerMOSFETThermallyEnhancedPowerPAKSC-70Package-SmallFootprintArea100%RgTestedComplianttoRoHSDirective2002/95/ECAPPLICATIONSLoadSwitchforPortableApplicationssuchasSmartPhones,TabletPCsandMobileComputing-LowVoltageGateDrive-LowVoltageDrop-PowerSwitchforICsNotes:a.
Packagelimitedb.
Surfacemountedon1"x1"FR4board.
c.
t=5s.
d.
Seesolderprofile(www.
vishay.
com/ppg73257).
ThePowerPAKSC-70isaleadlesspackage.
Theendoftheleadterminalisexposedcopper(notplated)asaresultofthesingulationprocessinmanufacturing.
Asolderfilletattheexposedcoppertipcannotbeguaranteedandisnotrequiredtoensureadequatebottomsidesolderinterconnection.
e.
Reworkconditions:manualsolderingwithasolderingironisnotrecommendedforleadlesscomponents.
f.
Maximumundersteadystateconditionsis80°C/W.
PRODUCTSUMMARYVDS(V)RDS(on)(Ω)Max.
ID(A)aQg(Typ.
)80.
0094atVGS=4.
5V1215nC0.
0105atVGS=2.
5V120.
0125atVGS=1.
8V120.
0180atVGS=1.
5V120.
0360atVGS=1.
2V12ABSOLUTEMAXIMUMRATINGS(TA=25°C,unlessotherwisenoted)ParameterSymbolLimitUnitDrain-SourceVoltageVDS8VGate-SourceVoltageVGS±5ContinuousDrainCurrent(TJ=150°C)TC=25°CID12aATC=70°C12aTA=25°C12a,b,cTA=70°C12a,b,cPulsedDrainCurrent(t=300s)IDM50ContinuousSource-DrainDiodeCurrentTC=25°CIS12aTA=25°C2.
9b,cMaximumPowerDissipationTC=25°CPD19WTC=70°C12TA=25°C3.
5b,cTA=70°C2.
2b,cOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CSolderingRecommendations(PeakTemperature)d,e260THERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitMaximumJunction-to-Ambientb,ft≤5sRthJA2836°C/WMaximumJunction-to-Case(Drain)SteadyStateRthJC5.
36.
5MarkingCodeXXXAOXLotTraceabilityandDatecodePart#codeOrderingInformation:SiA436DJ-T1-GE3(Lead(Pb)-freeandHalogen-free)N-ChannelMOSFETGDSPowerPAKSC-70-6L-Single654123DDDDGSS2.
05mm2.
05mmwww.
vishay.
com2DocumentNumber:63535S11-2242-Rev.
A,14-Nov-11VishaySiliconixSiA436DJNewProductThisdocumentissubjecttochangewithoutnotice.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000Notes:a.
Pulsetest;pulsewidth≤300s,dutycycle≤2%b.
Guaranteedbydesign,notsubjecttoproductiontesting.
Stressesbeyondthoselistedunder"AbsoluteMaximumRatings"maycausepermanentdamagetothedevice.
Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedintheoperationalsectionsofthespecificationsisnotimplied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectdevicereliability.
SPECIFICATIONS(TJ=25°C,unlessotherwisenoted)ParameterSymbolTestConditionsMin.
Typ.
Max.
UnitStaticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=250A8VVDSTemperatureCoefficientΔVDS/TJID=250A11mV/°CVGS(th)TemperatureCoefficientΔVGS(th)/TJ-2.
5Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=250A0.
350.
8VGate-SourceLeakageIGSSVDS=0V,VGS=±5V±100nAZeroGateVoltageDrainCurrentIDSSVDS=8V,VGS=0V1AVDS=8V,VGS=0V,TJ=55°C10On-StateDrainCurrentaID(on)VDS≥5V,VGS=4.
5V20ADrain-SourceOn-StateResistanceaRDS(on)VGS=4.
5V,ID=15.
7A0.
00780.
0094ΩVGS=2.
5V,ID=14.
9A0.
00870.
0105VGS=1.
8V,ID=13.
6A0.
01040.
0125VGS=1.
5V,ID=2.
5A0.
01200.
0180VGS=1.
2V,ID=1.
5A0.
01800.
0360ForwardTransconductanceagfsVDS=4V,ID=15.
7A70SDynamicbInputCapacitanceCissVDS=4V,VGS=0V,f=1MHz1508pFOutputCapacitanceCoss535ReverseTransferCapacitanceCrss321TotalGateChargeQgVDS=4V,VGS=5V,ID=15.
7A16.
825.
2nCVDS=4V,VGS=4.
5V,ID=15.
7A1523Gate-SourceChargeQgs1.
7Gate-DrainChargeQgd0.
9GateResistanceRgf=1MHz0.
52.
55ΩTurn-onDelayTimetd(on)VDD=4V,RL=0.
4ΩID10A,VGEN=4.
5V,Rg=1Ω1120nsRiseTimetr1020Turn-OffDelayTimetd(off)3045FallTimetf816Turn-onDelayTimetd(on)VDD=4V,RL=0.
4ΩID10A,VGEN=5V,Rg=1Ω1020RiseTimetr1020Turn-OffDelayTimetd(off)3045FallTimetf816Drain-SourceBodyDiodeCharacteristicsContinuousSource-DrainDiodeCurrentISTC=25°C12APulseDiodeForwardCurrentISM50BodyDiodeVoltageVSDIS=10A,VGS=0V0.
731.
2VBodyDiodeReverseRecoveryTimetrrIF=10A,di/dt=100A/s,TJ=25°C1020nsBodyDiodeReverseRecoveryChargeQrr14nCReverseRecoveryFallTimeta4nsReverseRecoveryRiseTimetb6DocumentNumber:63535S11-2242-Rev.
A,14-Nov-11www.
vishay.
com3VishaySiliconixSiA436DJNewProductThisdocumentissubjecttochangewithoutnotice.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)OutputCharacteristicsOn-Resistancevs.
DrainCurrentandGateVoltageGateCharge0102030405000.
511.
52ID-DrainCurrent(A)VDS-Drain-to-SourceVoltage(V)VGS=5Vthru2VVGS=1VVGS=1.
5V0.
0050.
010.
0150.
020.
02501020304050RDS(on)-On-Resistance(Ω)ID-DrainCurrent(A)VGS=2.
5VVGS=1.
8VVGS=1.
5VVGS=1.
2VVGS=4.
5V01234505101520VGS-Gate-to-SourceVoltage(V)Qg-TotalGateCharge(nC)VDS=6.
4VID=15.
7AVDS=2VVDS=4VTransferCharacteristicsCapacitanceOn-Resistancevs.
JunctionTemperature0510152000.
30.
60.
91.
2ID-DrainCurrent(A)VGS-Gate-to-SourceVoltage(V)TC=25°CTC=125°CTC=-55°C041082012301640205002468C-Capacitance(pF)VDS-Drain-to-SourceVoltage(V)CissCossCrss0.
70.
91.
11.
31.
5-50-250255075100125150RDS(on)-On-Resistance(Normalized)TJ-JunctionTemperature(°C)ID=15.
7AVGS=4.
5VVGS=2.
5Vwww.
vishay.
com4DocumentNumber:63535S11-2242-Rev.
A,14-Nov-11VishaySiliconixSiA436DJNewProductThisdocumentissubjecttochangewithoutnotice.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)Source-DrainDiodeForwardVoltageThresholdVoltage0.
11100.
00.
20.
40.
60.
81.
0IS-SourceCurrent(A)VSD-Source-to-DrainVoltage(V)TJ=150°CTJ=150°CTJ=25°C0.
10.
250.
40.
550.
7-50-250255075100125150VGS(th)(V)TJ-Temperature(°C)ID=250μAOn-Resistancevs.
Gate-to-SourceVoltageSinglePulsePower(Junction-to-Ambient)0.
0050.
010.
0150.
020.
025012345RDS(on)-On-Resistance(Ω)VGS-Gate-to-SourceVoltage(V)TJ=125°CTJ=25°CID=15.
7APower(W)Time(s)1010000.
10.
010.
0011001051015202530SafeOperatingArea,Junction-to-Ambient0.
010.
11101000.
1110ID-DrainCurrent(A)VDS-Drain-to-SourceVoltage(V)*VGS>minimumVGSatwhichRDS(on)isspecified100msLimitedbyRDS(on)*1msTA=25°CSinglePulseBVDSSLimited10ms100μs1s,10sDCDocumentNumber:63535S11-2242-Rev.
A,14-Nov-11www.
vishay.
com5VishaySiliconixSiA436DJNewProductThisdocumentissubjecttochangewithoutnotice.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)*ThepowerdissipationPDisbasedonTJ(max.
)=150°C,usingjunction-to-casethermalresistance,andismoreusefulinsettlingtheupperdissipationlimitforcaseswhereadditionalheatsinkingisused.
Itisusedtodeterminethecurrentrating,whenthisratingfallsbelowthepackagelimit.
CurrentDerating*0112132420255075100125150ID-DrainCurrent(A)TC-CaseTemperature(°C)PackageLimitedPowerDerating,Junction-to-Case061218240255075100125150Power(W)TC-CaseTemperature(°C)PowerDerating,Junction-to-Ambient0.
00.
51.
01.
52.
00255075100125150Power(W)TA-AmbientTemperature(°C)www.
vishay.
com6DocumentNumber:63535S11-2242-Rev.
A,14-Nov-11VishaySiliconixSiA436DJNewProductThisdocumentissubjecttochangewithoutnotice.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(25°C,unlessotherwisenoted)VishaySiliconixmaintainsworldwidemanufacturingcapability.
Productsmaybemanufacturedatoneofseveralqualifiedlocations.
ReliabilitydataforSiliconTechnologyandPackageReliabilityrepresentacompositeofallqualifiedlocations.
Forrelateddocumentssuchaspackage/tapedrawings,partmarking,andreliabilitydata,seewww.
vishay.
com/ppg63535.
NormalizedThermalTransientImpedance,Junction-to-Ambient10-310-2110100010-110-41000.
20.
10.
05SquareWavePulseDuration(s)NormalizedEffectiveTransientThermalImpedance10.
10.
01SinglePulset1t2Notes:PDM1.
DutyCycle,D=2.
PerUnitBase=RthJA=80°C/W3.
TJM-TA=PDMZthJA(t)t1t24.
SurfaceMountedDutyCycle=0.
50.
02NormalizedThermalTransientImpedance,Junction-to-Case10.
10.
2DutyCycle=0.
5SquareWavePulseDuration(s)NormalizedEffectiveTransientThermalImpedance0.
0010.
10.
010.
00010.
050.
02SinglePulse0.
1VishaySiliconixPackageInformationDocumentNumber:7300106-Aug-07www.
vishay.
com1PowerPAKSC70-6LDIMSINGLEPADDUALPADMILLIMETERSINCHESMILLIMETERSINCHESMinNomMaxMinNomMaxMinNomMaxMinNomMaxA0.
6750.
750.
800.
0270.
0300.
0320.
6750.
750.
800.
0270.
0300.
032A10-0.
050-0.
0020-0.
050-0.
002b0.
230.
300.
380.
0090.
0120.
0150.
230.
300.
380.
0090.
0120.
015C0.
150.
200.
250.
0060.
0080.
0100.
150.
200.
250.
0060.
0080.
010D1.
982.
052.
150.
0780.
0810.
0851.
982.
052.
150.
0780.
0810.
085D10.
850.
951.
050.
0330.
0370.
0410.
5130.
6130.
7130.
0200.
0240.
028D20.
1350.
2350.
3350.
0050.
0090.
013E1.
982.
052.
150.
0780.
0810.
0851.
982.
052.
150.
0780.
0810.
085E11.
401.
501.
600.
0550.
0590.
0630.
850.
951.
050.
0330.
0370.
041E20.
3450.
3950.
4450.
0140.
0160.
018E30.
4250.
4750.
5250.
0170.
0190.
021e0.
65BSC0.
026BSC0.
65BSC0.
026BSCK0.
275TYP0.
011TYP0.
275TYP0.
011TYPK10.
400TYP0.
016TYP0.
320TYP0.
013TYPK20.
240TYP0.
009TYP0.
252TYP0.
010TYPK30.
225TYP0.
009TYPK40.
355TYP0.
014TYPL0.
1750.
2750.
3750.
0070.
0110.
0150.
1750.
2750.
3750.
0070.
0110.
015T0.
050.
100.
150.
0020.
0040.
006ECN:C-07431Rev.
C,06-Aug-07DWG:5934E2BACKSIDEVIEWOFSINGLEBACKSIDEVIEWOFDUALNotes:1.
Alldimensionsareinmillimeters2.
Packageoutlineexclusiveofmoldflashandmetalburr3.
PackageoutlineinclusiveofplatingPIN1PIN6PIN5PIN4PIN2PIN3AZDETAILZzDEK1K2CA1K3K2K2ebbePIN6PIN5PIN4PIN1PIN3PIN2E1E1E1LLK4KKKD1D2D1D1K1E3ApplicationNote826VishaySiliconixDocumentNumber:70486www.
vishay.
comRevision:21-Jan-0811APPLICATIONNOTERECOMMENDEDPADLAYOUTFORPowerPAKSC70-6LSingle10.
300(0.
012)0.
350(0.
014)2.
200(0.
087)1.
500(0.
059)0.
650(0.
026)0.
950(0.
037)0.
300(0.
012)0.
355(0.
014)0.
235(0.
009)0.
475(0.
019)0.
870(0.
034)0.
275(0.
011)0.
350(0.
014)0.
550(0.
022)0.
650(0.
026)Dimensionsinmm/(Inches)ReturntoIndexLegalDisclaimerNoticewww.
vishay.
comVishayRevision:02-Oct-121DocumentNumber:91000DisclaimerALLPRODUCT,PRODUCTSPECIFICATIONSANDDATAARESUBJECTTOCHANGEWITHOUTNOTICETOIMPROVERELIABILITY,FUNCTIONORDESIGNOROTHERWISE.
VishayIntertechnology,Inc.
,itsaffiliates,agents,andemployees,andallpersonsactingonitsortheirbehalf(collectively,"Vishay"),disclaimanyandallliabilityforanyerrors,inaccuraciesorincompletenesscontainedinanydatasheetorinanyotherdisclosurerelatingtoanyproduct.
Vishaymakesnowarranty,representationorguaranteeregardingthesuitabilityoftheproductsforanyparticularpurposeorthecontinuingproductionofanyproduct.
Tothemaximumextentpermittedbyapplicablelaw,Vishaydisclaims(i)anyandallliabilityarisingoutoftheapplicationoruseofanyproduct,(ii)anyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages,and(iii)anyandallimpliedwarranties,includingwarrantiesoffitnessforparticularpurpose,non-infringementandmerchantability.
StatementsregardingthesuitabilityofproductsforcertaintypesofapplicationsarebasedonVishay'sknowledgeoftypicalrequirementsthatareoftenplacedonVishayproductsingenericapplications.
Suchstatementsarenotbindingstatementsaboutthesuitabilityofproductsforaparticularapplication.
Itisthecustomer'sresponsibilitytovalidatethataparticularproductwiththepropertiesdescribedintheproductspecificationissuitableforuseinaparticularapplication.
Parametersprovidedindatasheetsand/orspecificationsmayvaryindifferentapplicationsandperformancemayvaryovertime.
Alloperatingparameters,includingtypicalparameters,mustbevalidatedforeachcustomerapplicationbythecustomer'stechnicalexperts.
ProductspecificationsdonotexpandorotherwisemodifyVishay'stermsandconditionsofpurchase,includingbutnotlimitedtothewarrantyexpressedtherein.
Exceptasexpresslyindicatedinwriting,Vishayproductsarenotdesignedforuseinmedical,life-saving,orlife-sustainingapplicationsorforanyotherapplicationinwhichthefailureoftheVishayproductcouldresultinpersonalinjuryordeath.
CustomersusingorsellingVishayproductsnotexpresslyindicatedforuseinsuchapplicationsdosoattheirownrisk.
PleasecontactauthorizedVishaypersonneltoobtainwrittentermsandconditionsregardingproductsdesignedforsuchapplications.
Nolicense,expressorimplied,byestoppelorotherwise,toanyintellectualpropertyrightsisgrantedbythisdocumentorbyanyconductofVishay.
Productnamesandmarkingsnotedhereinmaybetrademarksoftheirrespectiveowners.
MaterialCategoryPolicyVishayIntertechnology,Inc.
herebycertifiesthatallitsproductsthatareidentifiedasRoHS-CompliantfulfillthedefinitionsandrestrictionsdefinedunderDirective2011/65/EUofTheEuropeanParliamentandoftheCouncilofJune8,2011ontherestrictionoftheuseofcertainhazardoussubstancesinelectricalandelectronicequipment(EEE)-recast,unlessotherwisespecifiedasnon-compliant.
PleasenotethatsomeVishaydocumentationmaystillmakereferencetoRoHSDirective2002/95/EC.
WeconfirmthatalltheproductsidentifiedasbeingcomplianttoDirective2002/95/ECconformtoDirective2011/65/EU.
VishayIntertechnology,Inc.
herebycertifiesthatallitsproductsthatareidentifiedasHalogen-FreefollowHalogen-FreerequirementsasperJEDECJS709Astandards.
PleasenotethatsomeVishaydocumentationmaystillmakereferencetotheIEC61249-2-21definition.
WeconfirmthatalltheproductsidentifiedasbeingcomplianttoIEC61249-2-21conformtoJEDECJS709Astandards.
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