blockingddd13.com

1.
Productprofile1.
1GeneraldescriptionSiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363plasticSMDpackage.
1.
2FeaturesandbenefitsInternallymatchedto50Againof26dBat950MHzOutputpowerat1dBgaincompression=1dBmSupplycurrent=12.
5mAatasupplyvoltageof3.
3VReverseisolation>36dBupto2GHzGoodlinearitywithlowsecondorderandthirdorderproductsNoisefigure=4.
1dBat950MHzUnconditionallystable(K>1)Nooutputinductorrequired1.
3ApplicationsLNBIFamplifiersGeneralpurposelownoisewidebandamplifierforfrequenciesbetweenDCand2.
2GHz2.
PinninginformationBGA2802MMICwidebandamplifierRev.
6—13July2015ProductdatasheetTable1.
PinningPinDescriptionSimplifiedoutlineGraphicsymbol1VCC2,5GND23RF_OUT4GND16RF_INV\PBGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July20152of18NXPSemiconductorsBGA2802MMICwidebandamplifier3.
Orderinginformation4.
Marking5.
Limitingvalues6.
Thermalcharacteristics7.
CharacteristicsTable2.
OrderinginformationTypenumberPackageNameDescriptionVersionBGA2802-plasticsurface-mountedpackage;6leadsSOT363Table3.
MarkingTypenumberMarkingcodeDescriptionBGA2802MA*madeinHongKong*=p:madeinHongKong*=W:madeinChina*=t:madeinMalaysiaTable4.
LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
SymbolParameterConditionsMinMaxUnitVCCsupplyvoltageRFinputACcoupled0.
5+5.
0VICCsupplycurrent-55mAPtottotalpowerdissipationTsp=90C-200mWTstgstoragetemperature40+125CTjjunctiontemperature-125CPdrivedrivepower-+10dBmTable5.
ThermalcharacteristicsSymbolParameterConditionsTypUnitRth(j-sp)thermalresistancefromjunctiontosolderpointPtot=200mW;Tsp=90C300K/WTable6.
CharacteristicsVCC=3.
3V;ZS=ZL=50;Pi=40dBm;Tamb=25C;measuredondemoboard;unlessotherwisespecified.
SymbolParameterConditionsMinTypMaxUnitVCCsupplyvoltage3.
03.
33.
6VICCsupplycurrent9.
812.
515.
2mABGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July20153of18NXPSemiconductorsBGA2802MMICwidebandamplifierGppowergainf=250MHz25.
025.
626.
2dBf=950MHz25.
22626.
7dBf=2150MHz23.
725.
126.
6dBRLininputreturnlossf=250MHz121416dBf=950MHz141719dBf=2150MHz162229dBRLoutoutputreturnlossf=250MHz192327dBf=950MHz151617dBf=2150MHz111417dBISLisolationf=250MHz436484dBf=950MHz474951dBf=2150MHz364042dBNFnoisefiguref=250MHz3.
74.
24.
7dBf=950MHz3.
74.
14.
5dBf=2150MHz3.
13.
64.
0dBB3dB3dBbandwidth3dBbelowgainat1GHz2.
52.
72.
9GHzKRollettstabilityfactorf=250MHz254056f=950MHz56.
57.
5f=2150MHz1.
52.
53PL(sat)saturatedoutputpowerf=250MHz455dBmf=950MHz245dBmf=2150MHz210dBmPL(1dB)outputpowerat1dBgaincompressionf=250MHz233dBmf=950MHz013dBmf=2150MHz432dBmIP3Iinputthird-orderinterceptpointPdrive=40dBm(foreachtone)f1=250MHz;f2=251MHz12108dBmf1=950MHz;f2=951MHz151311dBmf1=2150MHz;f2=2151MHz221916dBmIP3Ooutputthird-orderinterceptpointPdrive=40dBm(foreachtone)f1=250MHz;f2=251MHz131517dBmf1=950MHz;f2=951MHz111315dBmf1=2150MHz;f2=2151MHz369dBmPL(2H)secondharmonicoutputpowerPdrive=40dBmf1H=250MHz;f2H=500MHz585654dBmf1H=950MHz;f2H=1900MHz484645dBmIM2second-orderintermodulationdistancePdrive=40dBm(foreachtone)f1=250MHz;f2=251MHz454749dBcf1=950MHz;f2=951MHz384041dBcTable6.
Characteristics…continuedVCC=3.
3V;ZS=ZL=50;Pi=40dBm;Tamb=25C;measuredondemoboard;unlessotherwisespecified.
SymbolParameterConditionsMinTypMaxUnitBGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July20154of18NXPSemiconductorsBGA2802MMICwidebandamplifier8.
ApplicationinformationFigure1showsatypicalapplicationcircuitfortheBGA2802MMIC.
Thedeviceisinternallymatchedto50,andthereforedoesnotneedanyexternalmatching.
ThevalueoftheinputandoutputDCblockingcapacitorsC2andC3shouldnotbemorethan100pFforapplicationsabove100MHz.
However,whenthedeviceisoperatedbelow100MHz,thecapacitorvalueshouldbeincreased.
Thelocationofthe470pFsupplydecouplingcapacitor(Cdec)canbepreciselychosenforoptimumperformance.
ThePCBtopgroundplane,connectedtopins2,4and5mustbeascloseaspossibletotheMMIC,preferablyalsobelowtheMMIC.
Whenusingviaholes,usemultipleviaholesascloseaspossibletotheMMIC.
8.
1ApplicationexamplesFig1.
Typicalapplicationcircuit5)B2875)B,1*1'9696*1'5)RXWSXW5)LQSXW&&&GHFDDDTheMMICisverysuitableasIFamplifierine.
g.
LNB's.
Theexcellentwidebandcharacteristicsmakeitaneasybuildingblock.
AssecondamplifierafteranLNA,theMMICoffersaneasymatching,lownoisesolution.
Fig2.
ApplicationasIFamplifierFig3.
ApplicationasRFamplifierDDIIURP5)FLUFXLWRVFLOODWRUZLGHEDQGDPSOLILHUWR,)FLUFXLWRUGHPRGXODWRUPL[HUDDIDQWHQQDRVFLOODWRUZLGHEDQGDPSOLILHU/1$WR,)FLUFXLWRUGHPRGXODWRUPL[HUBGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July20155of18NXPSemiconductorsBGA2802MMICwidebandamplifier8.
2GraphsTamb=25C;ICC=12.
0mA;VCC=3.
3V;Z0=50.
(1)f=250MHz(2)f=950MHz(3)f=2150MHzFig4.
Inputreflectioncoefficient(S11);typicalvaluesDDQBGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July20156of18NXPSemiconductorsBGA2802MMICwidebandamplifierTamb=25C;ICC=12.
0mA;VCC=3.
3V;Z0=50.
(1)f=250MHz(2)f=950MHz(3)f=2150MHzFig5.
Outputreflectioncoefficient(S22);typicalvaluesDDQBGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July20157of18NXPSemiconductorsBGA2802MMICwidebandamplifierPdrive=40dBm;Z0=50.
(1)VCC=3.
0V;Tamb=85C;ICC=10.
00mA(2)VCC=3.
0V;Tamb=40C;ICC=11.
10mA(3)VCC=3.
3V;Tamb=25C;ICC=12.
00mA(4)VCC=3.
6V;Tamb=85C;ICC=12.
90mA(5)VCC=3.
6V;Tamb=40C;ICC=14.
20mAPdrive=40dBm;Z0=50.
(1)VCC=3.
0V;Tamb=85C;ICC=10.
00mA(2)VCC=3.
0V;Tamb=40C;ICC=11.
10mA(3)VCC=3.
3V;Tamb=25C;ICC=12.
00mA(4)VCC=3.
6V;Tamb=85C;ICC=12.
90mA(5)VCC=3.
6V;Tamb=40C;ICC=14.
20mAFig6.
Rollettstabilityfactorasfunctionoffrequency;typicalvaluesFig7.
Inputreturnlossasfunctionoffrequency;typicalvaluesDDQI*+].
I*+]DDQ5/LQG%BGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July20158of18NXPSemiconductorsBGA2802MMICwidebandamplifierPdrive=40dBm;Z0=50.
(1)VCC=3.
0V;Tamb=85C;ICC=10.
00mA(2)VCC=3.
0V;Tamb=40C;ICC=11.
10mA(3)VCC=3.
3V;Tamb=25C;ICC=12.
00mA(4)VCC=3.
6V;Tamb=85C;ICC=12.
90mA(5)VCC=3.
6V;Tamb=40C;ICC=14.
20mAPdrive=40dBm;Z0=50.
(1)VCC=3.
0V;Tamb=85C;ICC=10.
00mA(2)VCC=3.
0V;Tamb=40C;ICC=11.
10mA(3)VCC=3.
3V;Tamb=25C;ICC=12.
00mA(4)VCC=3.
6V;Tamb=85C;ICC=12.
90mA(5)VCC=3.
6V;Tamb=40C;ICC=14.
20mAFig8.
Outputreturnlossasfunctionoffrequency;typicalvaluesFig9.
Powergainasfunctionoffrequency;typicalvaluesI*+]DDQ5/RXWG%DDQI*+]*SG%BGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July20159of18NXPSemiconductorsBGA2802MMICwidebandamplifier8.
3TablesPdrive=40dBm;Z0=50.
(1)VCC=3.
0V;Tamb=85C;ICC=10.
00mA(2)VCC=3.
0V;Tamb=40C;ICC=11.
10mA(3)VCC=3.
3V;Tamb=25C;ICC=12.
00mA(4)VCC=3.
6V;Tamb=85C;ICC=12.
90mA(5)VCC=3.
6V;Tamb=40C;ICC=14.
20mAZ0=50.
(1)VCC=3.
0V;Tamb=85C;ICC=10.
00mA(2)VCC=3.
0V;Tamb=40C;ICC=11.
10mA(3)VCC=3.
3V;Tamb=25C;ICC=12.
00mA(4)VCC=3.
6V;Tamb=85C;ICC=12.
90mA(5)VCC=3.
6V;Tamb=40C;ICC=14.
20mAFig10.
Isolationasfunctionoffrequency;typicalvaluesFig11.
Noisefigureasfunctionoffrequency;typicalvaluesDDQI*+],6/G%DDQI*+]1)G%Table7.
SupplycurrentovertemperatureandsupplyvoltagesTypicalvalues.
SymbolParameterConditionsTamb(C)Unit40+25+85ICCsupplycurrentVCC=3.
0V11.
1010.
5010.
00mAVCC=3.
3V12.
7012.
0011.
50mAVCC=3.
6V14.
2013.
5012.
90mATable8.
SecondharmonicoutputpowerovertemperatureandsupplyvoltagesTypicalvalues.
SymbolParameterConditionsTamb(C)Unit40+25+85PL(2H)secondharmonicoutputpowerf=250MHz;Pdrive=40dBmVCC=3.
0V52-55-59dBmVCC=3.
3V-53-56-59dBmVCC=3.
6V-54-56-59dBmf=950MHz;Pdrive=40dBmVCC=3.
0V-46-47-48dBmVCC=3.
3V-45-46-48dBmVCC=3.
6V-45-46-47dBmBGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July201510of18NXPSemiconductorsBGA2802MMICwidebandamplifierTable9.
Inputpowerat1dBgaincompressionovertemperatureandsupplyvoltagesTypicalvalues.
SymbolParameterConditionsTamb(C)Unit40+25+85Pi(1dB)inputpowerat1dBgaincompressionf=250MHzVCC=3.
0V232323dBmVCC=3.
3V222222dBmVCC=3.
6V212222dBmf=950MHzVCC=3.
0V232424dBmVCC=3.
3V232324dBmVCC=3.
6V222324dBmf=2150MHzVCC=3.
0V262728dBmVCC=3.
3V262729dBmVCC=3.
6V262829dBmTable10.
Outputpowerat1dBgaincompressionovertemperatureandsupplyvoltagesTypicalvalues.
SymbolParameterConditionsTamb(C)Unit40+25+85PL(1dB)outputpowerat1dBgaincompressionf=250MHzVCC=3.
0V111dBmVCC=3.
3V332dBmVCC=3.
6V443dBmf=950MHzVCC=3.
0V+101dBmVCC=3.
3V210dBmVCC=3.
6V321dBmf=2150MHzVCC=3.
0V236dBmVCC=3.
3V135dBmVCC=3.
6V025dBmBGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July201511of18NXPSemiconductorsBGA2802MMICwidebandamplifierTable11.
SaturatedoutputpowerovertemperatureandsupplyvoltagesTypicalvalues.
SymbolParameterConditionsTamb(C)Unit40+25+85PL(sat)saturatedoutputpowerf=250MHzVCC=3.
0V333dBmVCC=3.
3V554dBmVCC=3.
6V765dBmf=950MHzVCC=3.
0V322dBmVCC=3.
3V443dBmVCC=3.
6V653dBmf=2150MHzVCC=3.
0V024dBmVCC=3.
3V+113dBmVCC=3.
6V+113dBmTable12.
Second-orderintermodulationdistanceovertemperatureandsupplyvoltagesTypicalvalues.
SymbolParameterConditionsTamb(C)Unit40+25+85IM2second-orderintermodulationdistancef1=250MHz;f2=251MHz;Pdrive=40dBmVCC=3.
0V364256dBcVCC=3.
3V404767dBcVCC=3.
6V445163dBcf1=950MHz;f2=951MHz;Pdrive=40dBmVCC=3.
0V343739dBcVCC=3.
3V374042dBcVCC=3.
6V404244dBcBGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July201512of18NXPSemiconductorsBGA2802MMICwidebandamplifierTable13.
Outputthird-orderinterceptpointovertemperatureandsupplyvoltagesTypicalvalues.
SymbolParameterConditionsTamb(C)Unit40+25+85IP3Ooutputthird-orderinterceptpointf1=250MHz;f2=251MHz;Pdrive=40dBmVCC=3.
0V141312dBmVCC=3.
3V161514dBmVCC=3.
6V181715dBmf1=950MHz;f2=951MHz;Pdrive=40dBmVCC=3.
0V131110dBmVCC=3.
3V141311dBmVCC=3.
6V161412dBmf1=2150MHz;f2=2151MHz;Pdrive=40dBmVCC=3.
0V863dBmVCC=3.
3V964dBmVCC=3.
6V964dBmTable14.
3dBbandwidthovertemperatureandsupplyvoltagesTypicalvalues.
SymbolParameterConditionsTamb(C)Unit40+25+85B3dB3dBbandwidthVCC=3.
0V2.
9222.
7682.
595GHzVCC=3.
3V2.
9122.
7562.
584GHzVCC=3.
6V2.
9022.
7432.
568GHzBGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July201513of18NXPSemiconductorsBGA2802MMICwidebandamplifier9.
Testinformation[1]Fordecouplingadecouplingcapacitor(Cdec)isusedononeofthepositionsofP5toP24.
TheresultsmentionedinthisdatasheethavebeenobtainedusingthedecouplingcapacitorCdeconpositionP22.
Fordecouplingadecouplingcapacitor(Cdec)isusedononeofthepositionsofP5toP24.
TheresultsmentionedinthisdatasheethavebeenobtainedusingthedecouplingcapacitorCdeconpositionP22.
Thedistancebetweenthecenterofpin1andthecenterofpositionP22is7.
43mm.
Fig12.
PCBlayoutanddemoboardwithcomponentsDDD333333333335),15)287333333333*1'9&&*1'&&6(0,&21'8&7256%*$[[[627(9%Table15.
ListofcomponentsusedforthetypicalapplicationComponentDescriptionValueDimensionsRemarksC1,C2multilayerceramicchipcapacitor470pF0603X7RRFcouplingcapacitorP5toP24[1]positionformultilayerceramicchipcapacitorCdec470pF0603X7RRFdecouplingcapacitorIC1BGA2802MMIC-SOT363BGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July201514of18NXPSemiconductorsBGA2802MMICwidebandamplifier10.
PackageoutlineFig13.
PackageoutlineSOT3635()(5(1&(6287/,1(9(56,21(8523($1352-(&7,21,668('$7(7$6276&Z%0ES'HHSLQLQGH[$$/S4GHWDLO;+((Y0$$%\PPVFDOHF;3ODVWLFVXUIDFHPRXQWHGSDFNDJHOHDGV62781,7$PD[ESF'(H+(/S4\ZYPPH',0(16,216PPDUHWKHRULJLQDOGLPHQVLRQV$BGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July201515of18NXPSemiconductorsBGA2802MMICwidebandamplifier11.
Abbreviations12.
RevisionhistoryTable16.
AbbreviationsAcronymDescriptionIFIntermediateFrequencyLNALow-NoiseAmplifierLNBLow-NoiseBlockconverterPCBPrinted-CircuitBoardSMDSurfaceMountedDeviceTable17.
RevisionhistoryDocumentIDReleasedateDatasheetstatusChangenoticeSupersedesBGA2802v.
620150713Productdatasheet-BGA2802v.
5Modifications:TheformatofthisdatasheethasbeenredesignedtocomplywiththenewidentityguidelinesofNXPSemiconductors.
Legaltextshavebeenadaptedtothenewcompanynamewhereappropriate.
BGA2802v.
520141209Productdatasheet-BGA2802v.
4BGA2802v.
420130823Productdatasheet-BGA2802v.
3BGA2802v.
320121010Productdatasheet-BGA2802v.
2BGA2802v.
220110415Productdatasheet-BGA2802v.
1BGA2802v.
120110224Productdatasheet--BGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July201516of18NXPSemiconductorsBGA2802MMICwidebandamplifier13.
Legalinformation13.
1Datasheetstatus[1]Pleaseconsultthemostrecentlyissueddocumentbeforeinitiatingorcompletingadesign.
[2]Theterm'shortdatasheet'isexplainedinsection"Definitions".
[3]Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.
ThelatestproductstatusinformationisavailableontheInternetatURLhttp://www.
nxp.
com.
13.
2DefinitionsDraft—Thedocumentisadraftversiononly.
Thecontentisstillunderinternalreviewandsubjecttoformalapproval,whichmayresultinmodificationsoradditions.
NXPSemiconductorsdoesnotgiveanyrepresentationsorwarrantiesastotheaccuracyorcompletenessofinformationincludedhereinandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
Shortdatasheet—Ashortdatasheetisanextractfromafulldatasheetwiththesameproducttypenumber(s)andtitle.
Ashortdatasheetisintendedforquickreferenceonlyandshouldnotbereliedupontocontaindetailedandfullinformation.
Fordetailedandfullinformationseetherelevantfulldatasheet,whichisavailableonrequestviathelocalNXPSemiconductorssalesoffice.
Incaseofanyinconsistencyorconflictwiththeshortdatasheet,thefulldatasheetshallprevail.
Productspecification—TheinformationanddataprovidedinaProductdatasheetshalldefinethespecificationoftheproductasagreedbetweenNXPSemiconductorsanditscustomer,unlessNXPSemiconductorsandcustomerhaveexplicitlyagreedotherwiseinwriting.
Innoeventhowever,shallanagreementbevalidinwhichtheNXPSemiconductorsproductisdeemedtoofferfunctionsandqualitiesbeyondthosedescribedintheProductdatasheet.
13.
3DisclaimersLimitedwarrantyandliability—Informationinthisdocumentisbelievedtobeaccurateandreliable.
However,NXPSemiconductorsdoesnotgiveanyrepresentationsorwarranties,expressedorimplied,astotheaccuracyorcompletenessofsuchinformationandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
NXPSemiconductorstakesnoresponsibilityforthecontentinthisdocumentifprovidedbyaninformationsourceoutsideofNXPSemiconductors.
InnoeventshallNXPSemiconductorsbeliableforanyindirect,incidental,punitive,specialorconsequentialdamages(including-withoutlimitation-lostprofits,lostsavings,businessinterruption,costsrelatedtotheremovalorreplacementofanyproductsorreworkcharges)whetherornotsuchdamagesarebasedontort(includingnegligence),warranty,breachofcontractoranyotherlegaltheory.
Notwithstandinganydamagesthatcustomermightincurforanyreasonwhatsoever,NXPSemiconductors'aggregateandcumulativeliabilitytowardscustomerfortheproductsdescribedhereinshallbelimitedinaccordancewiththeTermsandconditionsofcommercialsaleofNXPSemiconductors.
Righttomakechanges—NXPSemiconductorsreservestherighttomakechangestoinformationpublishedinthisdocument,includingwithoutlimitationspecificationsandproductdescriptions,atanytimeandwithoutnotice.
Thisdocumentsupersedesandreplacesallinformationsuppliedpriortothepublicationhereof.
Suitabilityforuse—NXPSemiconductorsproductsarenotdesigned,authorizedorwarrantedtobesuitableforuseinlifesupport,life-criticalorsafety-criticalsystemsorequipment,norinapplicationswherefailureormalfunctionofanNXPSemiconductorsproductcanreasonablybeexpectedtoresultinpersonalinjury,deathorseverepropertyorenvironmentaldamage.
NXPSemiconductorsanditssuppliersacceptnoliabilityforinclusionand/oruseofNXPSemiconductorsproductsinsuchequipmentorapplicationsandthereforesuchinclusionand/oruseisatthecustomer'sownrisk.
Applications—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.
NXPSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertestingormodification.
CustomersareresponsibleforthedesignandoperationoftheirapplicationsandproductsusingNXPSemiconductorsproducts,andNXPSemiconductorsacceptsnoliabilityforanyassistancewithapplicationsorcustomerproductdesign.
Itiscustomer'ssoleresponsibilitytodeterminewhethertheNXPSemiconductorsproductissuitableandfitforthecustomer'sapplicationsandproductsplanned,aswellasfortheplannedapplicationanduseofcustomer'sthirdpartycustomer(s).
Customersshouldprovideappropriatedesignandoperatingsafeguardstominimizetherisksassociatedwiththeirapplicationsandproducts.
NXPSemiconductorsdoesnotacceptanyliabilityrelatedtoanydefault,damage,costsorproblemwhichisbasedonanyweaknessordefaultinthecustomer'sapplicationsorproducts,ortheapplicationorusebycustomer'sthirdpartycustomer(s).
Customerisresponsiblefordoingallnecessarytestingforthecustomer'sapplicationsandproductsusingNXPSemiconductorsproductsinordertoavoidadefaultoftheapplicationsandtheproductsoroftheapplicationorusebycustomer'sthirdpartycustomer(s).
NXPdoesnotacceptanyliabilityinthisrespect.
Limitingvalues—Stressaboveoneormorelimitingvalues(asdefinedintheAbsoluteMaximumRatingsSystemofIEC60134)willcausepermanentdamagetothedevice.
Limitingvaluesarestressratingsonlyand(proper)operationofthedeviceattheseoranyotherconditionsabovethosegivenintheRecommendedoperatingconditionssection(ifpresent)ortheCharacteristicssectionsofthisdocumentisnotwarranted.
Constantorrepeatedexposuretolimitingvalueswillpermanentlyandirreversiblyaffectthequalityandreliabilityofthedevice.
Termsandconditionsofcommercialsale—NXPSemiconductorsproductsaresoldsubjecttothegeneraltermsandconditionsofcommercialsale,aspublishedathttp://www.
nxp.
com/profile/terms,unlessotherwiseagreedinavalidwrittenindividualagreement.
Incaseanindividualagreementisconcludedonlythetermsandconditionsoftherespectiveagreementshallapply.
NXPSemiconductorsherebyexpresslyobjectstoapplyingthecustomer'sgeneraltermsandconditionswithregardtothepurchaseofNXPSemiconductorsproductsbycustomer.
Nooffertosellorlicense—Nothinginthisdocumentmaybeinterpretedorconstruedasanoffertosellproductsthatisopenforacceptanceorthegrant,conveyanceorimplicationofanylicenseunderanycopyrights,patentsorotherindustrialorintellectualpropertyrights.
Documentstatus[1][2]Productstatus[3]DefinitionObjective[short]datasheetDevelopmentThisdocumentcontainsdatafromtheobjectivespecificationforproductdevelopment.
Preliminary[short]datasheetQualificationThisdocumentcontainsdatafromthepreliminaryspecification.
Product[short]datasheetProductionThisdocumentcontainstheproductspecification.
BGA2802Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2015.
Allrightsreserved.
ProductdatasheetRev.
6—13July201517of18NXPSemiconductorsBGA2802MMICwidebandamplifierExportcontrol—Thisdocumentaswellastheitem(s)describedhereinmaybesubjecttoexportcontrolregulations.
Exportmightrequireapriorauthorizationfromcompetentauthorities.
Non-automotivequalifiedproducts—UnlessthisdatasheetexpresslystatesthatthisspecificNXPSemiconductorsproductisautomotivequalified,theproductisnotsuitableforautomotiveuse.
Itisneitherqualifiednortestedinaccordancewithautomotivetestingorapplicationrequirements.
NXPSemiconductorsacceptsnoliabilityforinclusionand/oruseofnon-automotivequalifiedproductsinautomotiveequipmentorapplications.
Intheeventthatcustomerusestheproductfordesign-inanduseinautomotiveapplicationstoautomotivespecificationsandstandards,customer(a)shallusetheproductwithoutNXPSemiconductors'warrantyoftheproductforsuchautomotiveapplications,useandspecifications,and(b)whenevercustomerusestheproductforautomotiveapplicationsbeyondNXPSemiconductors'specificationssuchuseshallbesolelyatcustomer'sownrisk,and(c)customerfullyindemnifiesNXPSemiconductorsforanyliability,damagesorfailedproductclaimsresultingfromcustomerdesignanduseoftheproductforautomotiveapplicationsbeyondNXPSemiconductors'standardwarrantyandNXPSemiconductors'productspecifications.
Translations—Anon-English(translated)versionofadocumentisforreferenceonly.
TheEnglishversionshallprevailincaseofanydiscrepancybetweenthetranslatedandEnglishversions.
13.
4TrademarksNotice:Allreferencedbrands,productnames,servicenamesandtrademarksarethepropertyoftheirrespectiveowners.
14.
ContactinformationFormoreinformation,pleasevisit:http://www.
nxp.
comForsalesofficeaddresses,pleasesendanemailto:salesaddresses@nxp.
comNXPSemiconductorsBGA2802MMICwidebandamplifierNXPSemiconductorsN.
V.
2015.
Allrightsreserved.
Formoreinformation,pleasevisit:http://www.
nxp.
comForsalesofficeaddresses,pleasesendanemailto:salesaddresses@nxp.
comDateofrelease:13July2015Documentidentifier:BGA2802Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s)describedherein,havebeenincludedinsection'Legalinformation'.
15.
Contents1Productprofile11.
1Generaldescription11.
2Featuresandbenefits.
11.
3Applications12Pinninginformation.
13Orderinginformation.
24Marking25Limitingvalues.
26Thermalcharacteristics27Characteristics.
28Applicationinformation.
48.
1Applicationexamples48.
2Graphs58.
3Tables99Testinformation.
1310Packageoutline1411Abbreviations.
1512Revisionhistory.
1513Legalinformation.
1613.
1Datasheetstatus1613.
2Definitions.
1613.
3Disclaimers1613.
4Trademarks.
1714Contactinformation.
1715Contents18