C663aaa.com

1.
Productprofile1.
1GeneraldescriptionA600WLDMOSRFpowertransistorforbroadcastDohertytransmitterapplications.
Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitterapplications.
[1]Dependingonselectedchannel.
[2]Dependingonexciterused.
[3]PAR(ofoutputsignal)at0.
01%probabilityonCCDF;PARofinputsignal=9.
5dBat0.
01%probabilityonCCDF.
1.
2FeaturesandbenefitsHighefficiencyHighpowergainExcellentruggedness(VSWR40:1throughallphases)ExcellentthermalstabilityIntegratedESDprotectionOneDohertydesigncoversthefullbandwidthfrom470MHzto860MHzInternalinputmatchingforeaseofuseComplianttoDirective2002/95/EC,regardingRestrictionofHazardousSubstances(RoHS)1.
3ApplicationsBroadcasttransmitterapplicationsintheUHFbandDigitalbroadcastingBLF888D;BLF888DSUHFpowerLDMOStransistorRev.
4—18February2016ProductdatasheetTable1.
ApplicationinformationRFperformanceatVDS=50VinanultrawideDohertyapplication.
TestsignalfPL(AV)GpDIMDshldrPAR(MHz)(W)(dB)(%)(dBc)(dB)DVB-T(8kOFDM)470to860115to134[1]1740to48[1]38to44[2]8[3]BLF888D_BLF888DSAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
AmpleonNetherlandsB.
V.
2016.
Allrightsreserved.
ProductdatasheetRev.
4—18February20162of12BLF888D;BLF888DSUHFpowerLDMOStransistor2.
Pinninginformation[1]Connectedtoflange.
3.
Orderinginformation4.
Limitingvalues[1]Continuoususeatmaximumtemperaturewillaffectthereliability,fordetailsrefertotheon-lineMTFcalculator.
Table2.
PinningPinDescriptionSimplifiedoutlineGraphicsymbolBLF888D(SOT539A)1drain1(peak)2drain2(main)3gate1(peak)4gate2(main)5source[1]BLF888DS(SOT539B)1drain1(peak)2drain2(main)3gate1(peak)4gate2(main)5source[1]5124343512sym1175124343512sym117Table3.
OrderinginformationTypenumberPackageNameDescriptionVersionBLF888D-flangedbalancedceramicpackage;2mountingholes;4leadsSOT539ABLF888DS-earlessflangedbalancedceramicpackage;4leadsSOT539BTable4.
LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
SymbolParameterConditionsMinMaxUnitVDSdrain-sourcevoltage-104VVGSgate-sourcevoltage0.
5+11VTstgstoragetemperature65+150CTjjunctiontemperature[1]-225CBLF888D_BLF888DSAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
AmpleonNetherlandsB.
V.
2016.
Allrightsreserved.
ProductdatasheetRev.
4—18February20163of12BLF888D;BLF888DSUHFpowerLDMOStransistor5.
Thermalcharacteristics[1]MeasuredunderDCtestconditions,withpeaksectionoff.
[2]MeasuredinanultrawideDohertyapplication,usingaDVB-T(8kOFDM)signal,PAR(ofoutputsignal)at0.
01%probabilityonCCDF;PARofinputsignal=9.
5dBat0.
01%probabilityonCCDF.
6.
CharacteristicsTable5.
ThermalcharacteristicsSymbolParameterConditionsTypUnitRth(j-c)thermalresistancefromjunctiontocaseTcase=75C;VDS=50V;IDS=2.
7A(main);IDS=0A(peak)[1]0.
27K/WTcase=90C;VDS=50V;PL=115W;PAR=8dB[2]0.
16K/WTable6.
DCcharacteristicsTj=25C;persectionunlessotherwisespecified.
SymbolParameterConditionsMinTypMaxUnitV(BR)DSSdrain-sourcebreakdownvoltageVGS=0V;ID=2.
4mA104--VVGS(th)gate-sourcethresholdvoltageVDS=10V;ID=240mA1.
41.
92.
4VIDSSdrainleakagecurrentVGS=0V;VDS=50V-0.
0612.
8AIDSXdraincut-offcurrentVGS=VGS(th)+3.
75V;VDS=10V-37-AIGSSgateleakagecurrentVGS=10V;VDS=0V--280nARDS(on)drain-sourceon-stateresistanceVGS=VGS(th)+3.
75V;ID=8.
5A-120-mTable7.
ACcharacteristicsTj=25C;persectionunlessotherwisespecified.
SymbolParameterConditionsMinTypMaxUnitCissinputcapacitanceVGS=0V;VDS=50V;f=1MHz-210-pFCossoutputcapacitanceVGS=0V;VDS=50V;f=1MHz-70-pFCrssreversetransfercapacitanceVGS=0V;VDS=50V;f=1MHz-1.
3-pFTable8.
RFcharacteristicsVDS=50V;IDq=1.
3A;Tcase=25Cunlessotherwisespecified;inaclass-ABproductiontestcircuit.
SymbolParameterConditionsMinTypMaxUnitTestsignal:2-toneCWPL(AV)averageoutputpowerf1=860MHz;f2=860.
1MHz-250-WGppowergainf1=860MHz;f2=860.
1MHz1921-dBDdrainefficiencyf1=860MHz;f2=860.
1MHz4345-%IMD3third-orderintermodulationdistortionf1=860MHz;f2=860.
1MHz-3229dBcTestsignal:pulsedCWPL(3dB)outputpowerat3dBgaincompressionf=860MHz;tp=100s;=10%540580-WBLF888D_BLF888DSAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
AmpleonNetherlandsB.
V.
2016.
Allrightsreserved.
ProductdatasheetRev.
4—18February20164of12BLF888D;BLF888DSUHFpowerLDMOStransistor7.
Testinformation7.
1RuggednessinDohertyoperationTheBLF888DandBLF888DSarecapableofwithstandingaloadmismatchcorrespondingtoVSWR40:1throughallphasesunderthefollowingconditions:VDS=50V;f=810MHzatratedloadpower.
7.
2TestcircuitPrinted-CircuitBoard(PCB):RF-35;r=3.
5F/m;thickness=0.
765mm;thicknesscopperplating=35m,goldplated.
SeeTable9foralistofcomponents.
Fig1.
ComponentlayoutforproductionRFtestcircuitTable9.
ListofcomponentsFortestcircuitseeFigure1.
ComponentDescriptionValueRemarksC1multilayerceramicchipcapacitor12pF[1]C2,C3,C4,C5,C6multilayerceramicchipcapacitor8.
2pF[1]C7multilayerceramicchipcapacitor6.
8pF[2]C8multilayerceramicchipcapacitor4.
7pF[2]C9,C12,C13multilayerceramicchipcapacitor100pF[1]C10,C11multilayerceramicchipcapacitor10pF[1]C14,C15multilayerceramicchipcapacitor4.
7F,50VC16,C17multilayerceramicchipcapacitor3.
6pF[2]C18,C19multilayerceramicchipcapacitor4.
7F,50VC20,C21electrolyticcapacitor470F,63Vaaa-012723T1T2C20C18C10C12C13C14C15C9C7C8C11C17C19C21C23C5C3C32C34C33C35C36C37C30R6R5C31C2C6C4R2C1R4R3R1C22C1660mm60mm60mm33mm4.
6mm7mm11.
2mm18.
7mm32mmBLF888D_BLF888DSAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
AmpleonNetherlandsB.
V.
2016.
Allrightsreserved.
ProductdatasheetRev.
4—18February20165of12BLF888D;BLF888DSUHFpowerLDMOStransistor[1]AmericanTechnicalCeramicstype180Rorcapacitorofsamequality.
[2]AmericanTechnicalCeramicstype100Borcapacitorofsamequality.
[3]AmericanTechnicalCeramicstype100Aorcapacitorofsamequality.
7.
3Graphicaldata7.
3.
11-ToneCWpulsedC22,C23multilayerceramicchipcapacitor47pF[2]C30multilayerceramicchipcapacitor15pF[3]C31multilayerceramicchipcapacitor5.
6pF[3]C32multilayerceramicchipcapacitor2.
7pF[3]C33,C34,C35multilayerceramicchipcapacitor100pF[3]C36,C37multilayerceramicchipcapacitor470F,50VR1,R2resistor10R3,R4resistor5.
6SMD1206R5,R6resistor100R3,R4resistor510SMD1206T1,T2semirigidcoax25,length=160mmMicro-CoaxUT-090C-25Table9.
Listofcomponents…continuedFortestcircuitseeFigure1.
ComponentDescriptionValueRemarksIDq=2650mA;tp=100s;=10%.
(1)VDS=40V(2)VDS=45V(3)VDS=50V(4)VDS=55VIDq=2650mA;tp=100s;=10%.
(1)VDS=40V(2)VDS=45V(3)VDS=50V(4)VDS=55VFig2.
Powergainasafunctionofoutputpower;typicalvaluesFig3.
Drainefficiencyasafunctionofoutputpower;typicalvaluesaaa-0124730100200300400500600700800181920212223PL(W)GpGp(dB)(dB)(dB)(1)(1)(1)(2)(2)(2)(3)(3)(3)(4)(4)(4)aaa-01247401002003004005006007008000102030405060PL(W)ηDηD(%)(%)(%)(1)(1)(1)(2)(2)(2)(3)(3)(3)(4)(4)(4)BLF888D_BLF888DSAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
AmpleonNetherlandsB.
V.
2016.
Allrightsreserved.
ProductdatasheetRev.
4—18February20166of12BLF888D;BLF888DSUHFpowerLDMOStransistorVDS=50V;tp=100s;=10%.
(1)IDq=2250mA(2)IDq=2450mA(3)IDq=2650mA(4)IDq=2850mAFig4.
Powergainasafunctionofoutputpower;typicalvaluesaaa-012475010020030040050060070017181920212223PL(W)GpGp(dB)(dB)(dB)(4)(4)(4)(3)(3)(3)(2)(2)(2)(1)(1)(1)BLF888D_BLF888DSAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
AmpleonNetherlandsB.
V.
2016.
Allrightsreserved.
ProductdatasheetRev.
4—18February20167of12BLF888D;BLF888DSUHFpowerLDMOStransistor8.
PackageoutlineFig5.
PackageoutlineSOT539AREFERENCESOUTLINEVERSIONEUROPEANPROJECTIONISSUEDATEIECJEDECEIAJSOT539A12-05-0210-02-020510mmscalepAFbeDU2LHQc51243D1EAw1ABMMMqU1H1CBMMw2CE1Mw3UNITAmmDb11.
8111.
560.
180.
1031.
5530.
9413.
729.
539.
2717.
1216.
1010.
2910.
034.
74.
2ceU20.
250.
250.
51w335.
56qw2w1F1.
751.
50U141.
2841.
02H125.
5325.
27p3.
303.
05Q2.
262.
01EE19.
509.
30inches0.
4650.
4550.
0070.
0041.
2421.
218D131.
5230.
961.
2411.
2190.
5400.
3750.
3650.
6740.
6340.
4050.
3950.
1850.
1650.
0100.
0100.
0201.
4000.
0690.
0591.
6251.
6151.
0050.
9950.
1300.
1200.
0890.
0790.
3740.
366H3.
482.
970.
1370.
117LDIMENSIONS(millimetredimensionsarederivedfromtheoriginalinchdimensions)Flangedbalancedceramicpackage;2mountingholes;4leadsSOT539ANote1.
millimeterdimensionsarederivedfromtheoriginalinchdimensions.
2.
recommendedscrewpitchdimensionof1.
52inch(38.
6mm)basedonM3screw.
BLF888D_BLF888DSAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
AmpleonNetherlandsB.
V.
2016.
Allrightsreserved.
ProductdatasheetRev.
4—18February20168of12BLF888D;BLF888DSUHFpowerLDMOStransistorFig6.
PackageoutlineSOT539BReferencesOutlineversionEuropeanprojectionIssuedateIECJEDECJEITASOT539Bsot539b_po12-05-0213-05-24Unit(1)mmmaxnommin4.
74.
211.
8111.
5631.
5530.
9431.
5230.
969.
59.
39.
539.
271.
751.
5017.
1216.
103.
482.
9710.
2910.
030.
25ADimensionsEarlessflangedbalancedceramicpackage;4leadsSOT539Bbc0.
180.
10DD1EE1e13.
72FHH125.
5325.
27LQ2.
262.
01U132.
3932.
13U2w20.
25inchesmaxnommin0.
1850.
1650.
4650.
4551.
2421.
2181.
2411.
2190.
3740.
3660.
3750.
3650.
0690.
0590.
6740.
6340.
1370.
1170.
4050.
3950.
010.
0070.
0040.
541.
0050.
9950.
0890.
0791.
2751.
2650.
01w30510mmscalecEQE1eHLbH1U1U2Dw2w31234DDAFD15Note1.
millimeterdimensionsarederivedfromtheoriginalinchdimensions.
BLF888D_BLF888DSAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
AmpleonNetherlandsB.
V.
2016.
Allrightsreserved.
ProductdatasheetRev.
4—18February20169of12BLF888D;BLF888DSUHFpowerLDMOStransistor9.
Handlinginformation10.
Abbreviations11.
RevisionhistoryCAUTIONThisdeviceissensitivetoElectroStaticDischarge(ESD).
Observeprecautionsforhandlingelectrostaticsensitivedevices.
SuchprecautionsaredescribedintheANSI/ESDS20.
20,IEC/ST61340-5,JESD625-Aorequivalentstandards.
Table10.
AbbreviationsAcronymDescriptionCCDFComplementaryCumulativeDistributionFunctionCWContinuousWaveDVB-TDigitalVideoBroadcast-TerrestrialESDElectroStaticDischargeLDMOSLaterallyDiffusedMetal-OxideSemiconductorMTFMedianTimetoFailureOFDMOrthogonalFrequencyDivisionMultiplexingPARPeak-to-AverageRatioSMDSurfaceMountedDeviceUHFUltraHighFrequencyVSWRVoltageStanding-WaveRatioTable11.
RevisionhistoryDocumentIDReleasedateDatasheetstatusChangenoticeSupersedesBLF888D_BLF888DSv.
420160218Productdatasheet-BLF888D_BLF888DS#3Modifications:Table8onpage3:unitoflastrowhasbeencorrectedfrom"dB"to"W"BLF888D_BLF888DS#320150901Productdatasheet-BLF888D_BLF888DSv.
2BLF888D_BLF888DSv.
220140627Productdatasheet-BLF888D_BLF888DSv.
1BLF888D_BLF888DSv.
120140305Objectivedatasheet--BLF888D_BLF888DSAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
AmpleonNetherlandsB.
V.
2016.
Allrightsreserved.
ProductdatasheetRev.
4—18February201610of12BLF888D;BLF888DSUHFpowerLDMOStransistor12.
Legalinformation12.
1Datasheetstatus[1]Pleaseconsultthemostrecentlyissueddocumentbeforeinitiatingorcompletingadesign.
[2]Theterm'shortdatasheet'isexplainedinsection"Definitions".
[3]Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.
ThelatestproductstatusinformationisavailableontheInternetatURLhttp://www.
ampleon.
com.
12.
2DefinitionsDraft—Thedocumentisadraftversiononly.
Thecontentisstillunderinternalreviewandsubjecttoformalapproval,whichmayresultinmodificationsoradditions.
Ampleondoesnotgiveanyrepresentationsorwarrantiesastotheaccuracyorcompletenessofinformationincludedhereinandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
Shortdatasheet—Ashortdatasheetisanextractfromafulldatasheetwiththesameproducttypenumber(s)andtitle.
Ashortdatasheetisintendedforquickreferenceonlyandshouldnotbereliedupontocontaindetailedandfullinformation.
Fordetailedandfullinformationseetherelevantfulldatasheet,whichisavailableonrequestviathelocalAmpleonsalesoffice.
Incaseofanyinconsistencyorconflictwiththeshortdatasheet,thefulldatasheetshallprevail.
Productspecification—TheinformationanddataprovidedinaProductdatasheetshalldefinethespecificationoftheproductasagreedbetweenAmpleonanditscustomer,unlessAmpleonandcustomerhaveexplicitlyagreedotherwiseinwriting.
Innoeventhowever,shallanagreementbevalidinwhichtheAmpleonproductisdeemedtoofferfunctionsandqualitiesbeyondthosedescribedintheProductdatasheet.
12.
3DisclaimersLimitedwarrantyandliability—Informationinthisdocumentisbelievedtobeaccurateandreliable.
However,Ampleondoesnotgiveanyrepresentationsorwarranties,expressedorimplied,astotheaccuracyorcompletenessofsuchinformationandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
AmpleontakesnoresponsibilityforthecontentinthisdocumentifprovidedbyaninformationsourceoutsideofAmpleon.
InnoeventshallAmpleonbeliableforanyindirect,incidental,punitive,specialorconsequentialdamages(including-withoutlimitation-lostprofits,lostsavings,businessinterruption,costsrelatedtotheremovalorreplacementofanyproductsorreworkcharges)whetherornotsuchdamagesarebasedontort(includingnegligence),warranty,breachofcontractoranyotherlegaltheory.
Notwithstandinganydamagesthatcustomermightincurforanyreasonwhatsoever,Ampleon'saggregateandcumulativeliabilitytowardscustomerfortheproductsdescribedhereinshallbelimitedinaccordancewiththeTermsandconditionsofcommercialsaleofAmpleon.
Righttomakechanges—Ampleonreservestherighttomakechangestoinformationpublishedinthisdocument,includingwithoutlimitationspecificationsandproductdescriptions,atanytimeandwithoutnotice.
Thisdocumentsupersedesandreplacesallinformationsuppliedpriortothepublicationhereof.
Suitabilityforuse—Ampleonproductsarenotdesigned,authorizedorwarrantedtobesuitableforuseinlifesupport,life-criticalorsafety-criticalsystemsorequipment,norinapplicationswherefailureormalfunctionofanAmpleonproductcanreasonablybeexpectedtoresultinpersonalinjury,deathorseverepropertyorenvironmentaldamage.
Ampleonanditssuppliersacceptnoliabilityforinclusionand/oruseofAmpleonproductsinsuchequipmentorapplicationsandthereforesuchinclusionand/oruseisatthecustomer'sownrisk.
Applications—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.
Ampleonmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertestingormodification.
CustomersareresponsibleforthedesignandoperationoftheirapplicationsandproductsusingAmpleonproducts,andAmpleonacceptsnoliabilityforanyassistancewithapplicationsorcustomerproductdesign.
Itiscustomer'ssoleresponsibilitytodeterminewhethertheAmpleonproductissuitableandfitforthecustomer'sapplicationsandproductsplanned,aswellasfortheplannedapplicationanduseofcustomer'sthirdpartycustomer(s).
Customersshouldprovideappropriatedesignandoperatingsafeguardstominimizetherisksassociatedwiththeirapplicationsandproducts.
Ampleondoesnotacceptanyliabilityrelatedtoanydefault,damage,costsorproblemwhichisbasedonanyweaknessordefaultinthecustomer'sapplicationsorproducts,ortheapplicationorusebycustomer'sthirdpartycustomer(s).
Customerisresponsiblefordoingallnecessarytestingforthecustomer'sapplicationsandproductsusingAmpleonproductsinordertoavoidadefaultoftheapplicationsandtheproductsoroftheapplicationorusebycustomer'sthirdpartycustomer(s).
Ampleondoesnotacceptanyliabilityinthisrespect.
Limitingvalues—Stressaboveoneormorelimitingvalues(asdefinedintheAbsoluteMaximumRatingsSystemofIEC60134)willcausepermanentdamagetothedevice.
Limitingvaluesarestressratingsonlyand(proper)operationofthedeviceattheseoranyotherconditionsabovethosegivenintheRecommendedoperatingconditionssection(ifpresent)ortheCharacteristicssectionsofthisdocumentisnotwarranted.
Constantorrepeatedexposuretolimitingvalueswillpermanentlyandirreversiblyaffectthequalityandreliabilityofthedevice.
Termsandconditionsofcommercialsale—Ampleonproductsaresoldsubjecttothegeneraltermsandconditionsofcommercialsale,aspublishedathttp://www.
ampleon.
com/terms,unlessotherwiseagreedinavalidwrittenindividualagreement.
Incaseanindividualagreementisconcludedonlythetermsandconditionsoftherespectiveagreementshallapply.
Ampleonherebyexpresslyobjectstoapplyingthecustomer'sgeneraltermsandconditionswithregardtothepurchaseofAmpleonproductsbycustomer.
Nooffertosellorlicense—Nothinginthisdocumentmaybeinterpretedorconstruedasanoffertosellproductsthatisopenforacceptanceorthegrant,conveyanceorimplicationofanylicenseunderanycopyrights,patentsorotherindustrialorintellectualpropertyrights.
Exportcontrol—Thisdocumentaswellastheitem(s)describedhereinmaybesubjecttoexportcontrolregulations.
Exportmightrequireapriorauthorizationfromcompetentauthorities.
Documentstatus[1][2]Productstatus[3]DefinitionObjective[short]datasheetDevelopmentThisdocumentcontainsdatafromtheobjectivespecificationforproductdevelopment.
Preliminary[short]datasheetQualificationThisdocumentcontainsdatafromthepreliminaryspecification.
Product[short]datasheetProductionThisdocumentcontainstheproductspecification.
BLF888D_BLF888DSAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
AmpleonNetherlandsB.
V.
2016.
Allrightsreserved.
ProductdatasheetRev.
4—18February201611of12BLF888D;BLF888DSUHFpowerLDMOStransistorNon-automotivequalifiedproducts—UnlessthisdatasheetexpresslystatesthatthisspecificAmpleonproductisautomotivequalified,theproductisnotsuitableforautomotiveuse.
Itisneitherqualifiednortestedinaccordancewithautomotivetestingorapplicationrequirements.
Ampleonacceptsnoliabilityforinclusionand/oruseofnon-automotivequalifiedproductsinautomotiveequipmentorapplications.
Intheeventthatcustomerusestheproductfordesign-inanduseinautomotiveapplicationstoautomotivespecificationsandstandards,customer(a)shallusetheproductwithoutAmpleon'warrantyoftheproductforsuchautomotiveapplications,useandspecifications,and(b)whenevercustomerusestheproductforautomotiveapplicationsbeyondAmpleon'specificationssuchuseshallbesolelyatcustomer'sownrisk,and(c)customerfullyindemnifiesAmpleonforanyliability,damagesorfailedproductclaimsresultingfromcustomerdesignanduseoftheproductforautomotiveapplicationsbeyondAmpleon'standardwarrantyandAmpleon'productspecifications.
Translations—Anon-English(translated)versionofadocumentisforreferenceonly.
TheEnglishversionshallprevailincaseofanydiscrepancybetweenthetranslatedandEnglishversions.
12.
4Licenses12.
5TrademarksNotice:Allreferencedbrands,productnames,servicenamesandtrademarksarethepropertyoftheirrespectiveowners.
Anyreferenceoruseofany'NXP'trademarkinthisdocumentorinoronthesurfaceofAmpleonproductsdoesnotresultinanyclaim,liabilityorentitlementvis-à-vistheownerofthistrademark.
AmpleonisnolongerpartoftheNXPgroupofcompaniesandanyreferencetooruseofthe'NXP'trademarkswillbereplacedbyreferencetooruseofAmpleon'sowntrademarks.
13.
ContactinformationFormoreinformation,pleasevisit:http://www.
ampleon.
comForsalesofficeaddresses,pleasevisit:http://www.
ampleon.
com/salesICswithDVB-TorDVB-T2functionalityUseofthisproductinanymannerthatcomplieswiththeDVB-TortheDVB-T2standardmayrequirelicensesunderapplicablepatentsoftheDVB-TrespectivelytheDVB-T2patentportfolio,whichlicenseisavailablefromSisvelS.
p.
A.
,ViaSestriere100,10060None(TO),Italy,andunderapplicablepatentsofotherparties.
BLF888D;BLF888DSUHFpowerLDMOStransistorAmpleonNetherlandsB.
V.
2016.
Allrightsreserved.
Formoreinformation,pleasevisit:http://www.
ampleon.
comForsalesofficeaddresses,pleasevisit:http://www.
ampleon.
com/salesDateofrelease:18February2016Documentidentifier:BLF888D_BLF888DSPleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s)describedherein,havebeenincludedinsection'Legalinformation'.
14.
Contents1Productprofile11.
1Generaldescription11.
2Featuresandbenefits.
11.
3Applications12Pinninginformation.
23Orderinginformation.
24Limitingvalues.
25Thermalcharacteristics36Characteristics.
37Testinformation.
47.
1RuggednessinDohertyoperation47.
2Testcircuit.
47.
3Graphicaldata57.
3.
11-ToneCWpulsed58Packageoutline79Handlinginformation.
910Abbreviations.
911Revisionhistory.
912Legalinformation.
1012.
1Datasheetstatus1012.
2Definitions.
1012.
3Disclaimers1012.
4Licenses1112.
5Trademarks.
1113Contactinformation.
1114Contents12