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SemiconductorComponentsIndustries,LLC,2019December,2019Rev.
11PublicationOrderNumber:NVG800A75L4DSC/DAutomotive750V,800ADualSideCoolingHalf-BridgePowerModuleVE-TractDualNVG800A75L4DSCProductDescriptionTheNVG800A75L4DSCispartofafamilyofpowermoduleswithdualsidecoolingandcompactfootprintsforHybrid(HEV)andElectricVehicle(EV)tractioninverterapplication.
ThemoduleconsistsoftwoFieldStop4(FS4)750VNarrowMesaIGBTsinahalfbridgeconfiguration.
ThechipsetutilizesthenewnarrowmesaIGBTtechnologyinprovidinghighcurrentdensityandrobustshortcircuitprotectionwithhigherblockingvoltagetodeliveroutstandingperformanceinEVtractionapplications.
Adualsideliquidcoolingheatsinkreferencedesignalongwithacompleteinverterkit(NVG800A75L4DSCEVK)isavailabletoenableeasierdesignin.
FeaturesDualSideCoolingIntegratedChipLevelTemperatureandCurrentSensorTvjmax=175°CforContinuousOperationUltralowstrayinductanceLowVCESATandSwitchingLossesAutomotiveGradeFS4&FastDiodeChipTechnologies4.
2kVIsolatedDBCSubstrateAECQualifiedandPPAPCapableThisDeviceisPbFreeandisRoHSCompliantTypicalApplicationsHybridandElectricVehicleTractionInverterHighPowerDCDCConverterSeedetailedorderingandshippinginformationonpage5ofthisdatasheet.
ORDERINGINFORMATIONwww.
onsemi.
comAHPM15CEACASE100DDVETractDualNVG800A75L4DSCwww.
onsemi.
com2PINDESCRIPTIONPin#PinPinFunctionDescriptionPinArrangement1NLowSideEmitter2PHighSideCollector3H/SCOLLECTORSENSEHighSideCollectorSense4H/SCURRENTSENSEHighSideCurrentSense5H/SEMITTERSENSEHighSideEmitterSense6H/SGATEHighSideGate7H/STEMPSENSE(CATHODE)HighSideTempsenseDiodeCathode8H/STEMPSENSE(ANODE)HighSideTempsenseDiodeAnode9~PhaseOutput10L/SCURRENTSENSELowSideCurrentSense11L/SEMITTERSENSELowSideEmitterSense12L/SGATELowSideGate13L/STEMPSENSE(CATHODE)LowSideTempsenseDiodeCathode14L/STEMPSENSE(ANODE)LowSideTempsenseDiodeAnode15L/SCOLLECTORSENSELowSideCollectorSenseMaterialsDBCSubstrate:Al2O3isolatedsubstrate,basicisolation,andcopperonbothsidesLeadFrame:CopperwithTinelectroplatingFlammabilityInformationAllmaterialspresentinthepowermodulemeetULflammabilityratingclass94V0MODULECHARACTERISTICSSymbolParameterRatingUnitTvjContinuousOperatingJunctionTemperaturerange40to175°CTSTGStorageTemperaturerange40to125°CVISOIsolationVoltage,DC,t=1s4200VCreepageTerminaltoTerminal6.
2mmClearanceTerminaltoTerminal3.
4mmCTIComparativetrackingindex>600MinTypMaxLsCEStrayInductance8nHRCC'+EE'Moduleleadresistance,terminalschip0.
15mWGModuleweight75gMM4screwsformoduleterminals2.
2NmVETractDualNVG800A75L4DSCwww.
onsemi.
com3ABSOLUTEMAXIMUMRATINGS(TVJ=25°C,UnlessOtherwiseSpecified)SymbolParameterRatingUnitIGBTVCESCollectortoEmitterVoltage750VVGESGatetoEmitterVoltage±20VICNImplementedCollectorCurrent800AICnomContinuousDCCollectorCurrent,TvJmax=175°C,TF=65°C,ref.
heatsink550(1)AICRMPulsedCollectorCurrent@VGE=15V,tp=1ms1600ADiodeVRRMRepetitivepeakreversevoltage750VIFNImplementedForwardCurrent800AIFContinuousForwardCurrent,TvJmax=175°C,TF=65°C,ref.
heatsink420(1)AIFRMRepetitivePeakForwardCurrent,tp=1ms1600AI2tvalueSurgecurrentcapability,VR=0V,tp=10ms,TvJ=150°CTVJ=175°C2000018000A2sStressesexceedingthoselistedintheMaximumRatingstablemaydamagethedevice.
Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbeassumed,damagemayoccurandreliabilitymaybeaffected.
1.
Verifiedbycharacterization,notbytest.
THERMALCHARACTERISTICS(Verifiedbycharacterization,notbytest.
)SymbolParameterMinTypMaxUnitIGBT.
Rth,JCEffectiveRth,JunctiontoCase(2)0.
050.
07°C/WIGBT.
Rth,JFEffectiveRth,JunctiontoFluid,lTIM=6W/mK,F=660N10L/min,65°C,50/50EGW,Ref.
Heatsink0.
14°C/WDiode.
Rth,JCEffectiveRth,JunctiontoCase(2)0.
080.
10°C/WDiode.
Rth,JFEffectiveRth,JunctiontoFluid,lTIM=6W/mK,F=660N10L/min,65°C,50/50EGW,Ref.
Heatsink0.
21°C/W2.
Forthemeasurementpointofcasetemperature(Tc),DBCdiscoloration,pickercircleprintisallowed,pleaserefertotheVETracDualassemblyguideforadditionaldetailsaboutacceptableDBCsurfacefinish.
VETractDualNVG800A75L4DSCwww.
onsemi.
com4CHARACTERISTICSOFIGBT(Tvj=25°C,UnlessOtherwiseSpecified)ParametersConditionsMinTypMaxUnitVCESATCollectortoEmitterSaturationVoltage(Terminal)VGE=15V,IC=600A,TvJ=25°CTvJ=150°CTvJ=175°CVGE=15V,IC=800A,TvJ=25°CTvJ=150°CTvJ=175°C1.
301.
421.
451.
441.
641.
681.
55VICESCollectortoEmitterLeakageCurrentVGE=0,VCE=750VTvJ=25°CTvJ=175°C81mAmAIGESGate–EmitterLeakageCurrentVCE=0,VGE=±20V400nAVthThresholdVoltageVCE=VGE,IC=500mA4.
65.
56.
2VQGTotalGateChargeVGE=8to15V,VCE=400V1.
9mCRGintInternalgateresistance2WCiesInputCapacitanceVCE=30V,VGE=0V,f=1MHz48nFCoesOutputCapacitanceVCE=30V,VGE=0V,f=1MHz1.
37nFCresReverseTransferCapacitanceVCE=30V,VGE=0V,f=1MHz0.
15nFTd.
onTurnondelay,inductiveloadIC=600A,VCE=400VTvJ=25°CVGE=+15/8VTvJ=150°CRg.
on=4.
7WTvJ=175°C253283287nsTrRisetime,inductiveloadIC=600A,VCE=400VTvJ=25°CVGE=+15/8VTvJ=150°CRg.
on=4.
7WTvJ=175°C94112117nsTd.
offTurnoffdelay,inductiveloadIC=600A,VCE=400VTvJ=25°CVGE=+15/8VTvJ=150°CRg.
off=15WTvJ=175°C760790800nsTfFalltime,inductiveloadIC=600A,VCE=400VTvJ=25°CVGE=+15/8VTvJ=150°CRg.
off=15WTvJ=175°C95140153nsEONTurnOnSwitchingLoss(includingdiodereverserecoveryloss)IC=600A,VCE=400V,VGE=+15/8V,Ls=20nH,Rg.
on=4,7Wdi/dt(TvJ=25°C)=5.
13A/nsdi/dt(TvJ=175°C)=4.
11A/nsTvJ=25°CTvJ=150°CTvJ=175°C22.
4133.
3036.
35mJEOFFTurnOffSwitchingLossIC=600A,VCE=400V,VGE=+15/8V,Ls=20nH,Rg.
off=15Wdv/dt(TvJ=25°C)=2.
81V/nsdv/dt(TvJ=175°C)=2.
11V/nsTvJ=25°CTvJ=150°CTvJ=175°C27.
2237.
1939.
09mJESCMinimumShortCircuitEnergyWithstandVGE=15V,VCC=400VTvJ=25°CTvJ=175°C57.
5JVETractDualNVG800A75L4DSCwww.
onsemi.
com5CHARACTERISTICSOFINVERSEDIODE(TVJ=25°C,UnlessOtherwiseSpecified)ParametersConditionsMinTypMaxUnitVFDiodeForwardVoltage(Terminal)VGE=0V,IC=600A,TvJ=25°CTvJ=150°CTvJ=175°CVGE=0V,IC=800A,TvJ=25°CTvJ=150°CTvJ=175°C1.
401.
301.
301.
481.
441.
421.
60VErrReverseRecoveryEnergyIF=600A,VR=400V,VGE=8V,Rg.
on=4.
7W,di/dt=3.
12A/ns(175°C)TvJ=25°CTvJ=150°CTvJ=175°C4.
0910.
9311.
92mJQRRRecoveredChargeIF=600A,VR=400V,VGE=8V,Rg.
on=4.
7W,di/dt=3.
12A/ns(175°C)TvJ=25°CTvJ=150°CTvJ=175°C18.
7044.
4848.
40mCIrrPeakReverseRecoveryCurrentIF=600A,VR=400V,VGE=8V,Rg.
on=4.
7W,di/dt=3.
12A/ns(175°C)TvJ=25°CTvJ=150°CTvJ=175°C248331337ASENSORCHARACTERISTICS(TVJ=25°C,UnlessOtherwiseSpecified)ParametersConditionsMinTypMaxUnitTsenseTemperaturesenseIF=1mA,TvJ=40°CTvJ=25°CTvJ=150°CTvJ=175°C2.
46(3)2.
962.
541.
761.
612.
60(3)VIsenseCurrentsenseRshunt=5WIC=1600AIC=800AIC=100ARshunt=20WIC=1600AIC=800AIC=100A37920043.
064435194.
0mV3.
MeasuredatchiplevelORDERINGINFORMATIONPartNumberDeviceMarkingPackageShippingNVG800A75L4DSCN875DSCAHPM15CEA(PbFree)6Units/TubeVETractDualNVG800A75L4DSCwww.
onsemi.
com6Figure1.
IGBTOutputCharacteristicFigure2.
IGBTTransferCharacteristicFigure3.
IGBTOutputCharacteristicFigure4.
IGBTOutputCharacteristicVETractDualNVG800A75L4DSCwww.
onsemi.
com7Figure5.
GateChargeCharacteristicFigure6.
CapacitanceCharacteristicFigure7.
EONvs.
IcFigure8.
EONvs.
RgVETractDualNVG800A75L4DSCwww.
onsemi.
com8Figure9.
EOFFvs.
IcFigure10.
EOFFvs.
RgFigure11.
IGBTSwitchingTimesvsIc,TVJ=255CFigure12.
IGBTSwitchingTimesvsIc,TVJ=1755CVETractDualNVG800A75L4DSCwww.
onsemi.
com9Figure13.
ReverseBiasSafeOperatingAreaFigure14.
IGBTTransientThermalImpedanceFigure15.
DiodeForwardCharacteristicFigure16.
DiodeSwitchingLossesvs.
IFVETractDualNVG800A75L4DSCwww.
onsemi.
com10Figure17.
DiodeSwitchingLossesvs.
RgFigure18.
DiodeTransientThermalImpedanceFigure19.
TemperatureSensorCharacteristicFigure20.
CurrentSensorCharacteristicVETractDualNVG800A75L4DSCwww.
onsemi.
com11Figure21.
CurrentSensorCharacteristicFigure22.
MaximumAllowedVCEVETracisatrademarkofSemiconductorComponentsIndustries,LLC(SCILLC)oritssubsidiariesintheUnitedStatesand/orothercountries.
AHPM15CEACASE100DDISSUEADATE09OCT2019GENERICMARKINGDIAGRAM*ZZZ=AssemblyLotCodeAT=Assembly&TestSiteCodeY=YearWW=WorkWeekXXXX=SpecificDeviceCodeNNN=SerialNumber*Thisinformationisgeneric.
Pleaserefertodevicedatasheetforactualpartmarking.
PbFreeindicator,"G"ormicrodot"G",mayormaynotbepresent.
SomeproductsmaynotfollowtheGenericMarking.
MECHANICALCASEOUTLINEPACKAGEDIMENSIONSONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
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ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
98AON86580GDOCUMENTNUMBER:DESCRIPTION:ElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromtheDocumentRepository.
Printedversionsareuncontrolledexceptwhenstamped"CONTROLLEDCOPY"inred.
PAGE1OF1AHPM15CEASemiconductorComponentsIndustries,LLC,2018www.
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comwww.
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com1ONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
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11PublicationOrderNumber:NVG800A75L4DSC/DAutomotive750V,800ADualSideCoolingHalf-BridgePowerModuleVE-TractDualNVG800A75L4DSCProductDescriptionTheNVG800A75L4DSCispartofafamilyofpowermoduleswithdualsidecoolingandcompactfootprintsforHybrid(HEV)andElectricVehicle(EV)tractioninverterapplication.
ThemoduleconsistsoftwoFieldStop4(FS4)750VNarrowMesaIGBTsinahalfbridgeconfiguration.
ThechipsetutilizesthenewnarrowmesaIGBTtechnologyinprovidinghighcurrentdensityandrobustshortcircuitprotectionwithhigherblockingvoltagetodeliveroutstandingperformanceinEVtractionapplications.
Adualsideliquidcoolingheatsinkreferencedesignalongwithacompleteinverterkit(NVG800A75L4DSCEVK)isavailabletoenableeasierdesignin.
FeaturesDualSideCoolingIntegratedChipLevelTemperatureandCurrentSensorTvjmax=175°CforContinuousOperationUltralowstrayinductanceLowVCESATandSwitchingLossesAutomotiveGradeFS4&FastDiodeChipTechnologies4.
2kVIsolatedDBCSubstrateAECQualifiedandPPAPCapableThisDeviceisPbFreeandisRoHSCompliantTypicalApplicationsHybridandElectricVehicleTractionInverterHighPowerDCDCConverterSeedetailedorderingandshippinginformationonpage5ofthisdatasheet.
ORDERINGINFORMATIONwww.
onsemi.
comAHPM15CEACASE100DDVETractDualNVG800A75L4DSCwww.
onsemi.
com2PINDESCRIPTIONPin#PinPinFunctionDescriptionPinArrangement1NLowSideEmitter2PHighSideCollector3H/SCOLLECTORSENSEHighSideCollectorSense4H/SCURRENTSENSEHighSideCurrentSense5H/SEMITTERSENSEHighSideEmitterSense6H/SGATEHighSideGate7H/STEMPSENSE(CATHODE)HighSideTempsenseDiodeCathode8H/STEMPSENSE(ANODE)HighSideTempsenseDiodeAnode9~PhaseOutput10L/SCURRENTSENSELowSideCurrentSense11L/SEMITTERSENSELowSideEmitterSense12L/SGATELowSideGate13L/STEMPSENSE(CATHODE)LowSideTempsenseDiodeCathode14L/STEMPSENSE(ANODE)LowSideTempsenseDiodeAnode15L/SCOLLECTORSENSELowSideCollectorSenseMaterialsDBCSubstrate:Al2O3isolatedsubstrate,basicisolation,andcopperonbothsidesLeadFrame:CopperwithTinelectroplatingFlammabilityInformationAllmaterialspresentinthepowermodulemeetULflammabilityratingclass94V0MODULECHARACTERISTICSSymbolParameterRatingUnitTvjContinuousOperatingJunctionTemperaturerange40to175°CTSTGStorageTemperaturerange40to125°CVISOIsolationVoltage,DC,t=1s4200VCreepageTerminaltoTerminal6.
2mmClearanceTerminaltoTerminal3.
4mmCTIComparativetrackingindex>600MinTypMaxLsCEStrayInductance8nHRCC'+EE'Moduleleadresistance,terminalschip0.
15mWGModuleweight75gMM4screwsformoduleterminals2.
2NmVETractDualNVG800A75L4DSCwww.
onsemi.
com3ABSOLUTEMAXIMUMRATINGS(TVJ=25°C,UnlessOtherwiseSpecified)SymbolParameterRatingUnitIGBTVCESCollectortoEmitterVoltage750VVGESGatetoEmitterVoltage±20VICNImplementedCollectorCurrent800AICnomContinuousDCCollectorCurrent,TvJmax=175°C,TF=65°C,ref.
heatsink550(1)AICRMPulsedCollectorCurrent@VGE=15V,tp=1ms1600ADiodeVRRMRepetitivepeakreversevoltage750VIFNImplementedForwardCurrent800AIFContinuousForwardCurrent,TvJmax=175°C,TF=65°C,ref.
heatsink420(1)AIFRMRepetitivePeakForwardCurrent,tp=1ms1600AI2tvalueSurgecurrentcapability,VR=0V,tp=10ms,TvJ=150°CTVJ=175°C2000018000A2sStressesexceedingthoselistedintheMaximumRatingstablemaydamagethedevice.
Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbeassumed,damagemayoccurandreliabilitymaybeaffected.
1.
Verifiedbycharacterization,notbytest.
THERMALCHARACTERISTICS(Verifiedbycharacterization,notbytest.
)SymbolParameterMinTypMaxUnitIGBT.
Rth,JCEffectiveRth,JunctiontoCase(2)0.
050.
07°C/WIGBT.
Rth,JFEffectiveRth,JunctiontoFluid,lTIM=6W/mK,F=660N10L/min,65°C,50/50EGW,Ref.
Heatsink0.
14°C/WDiode.
Rth,JCEffectiveRth,JunctiontoCase(2)0.
080.
10°C/WDiode.
Rth,JFEffectiveRth,JunctiontoFluid,lTIM=6W/mK,F=660N10L/min,65°C,50/50EGW,Ref.
Heatsink0.
21°C/W2.
Forthemeasurementpointofcasetemperature(Tc),DBCdiscoloration,pickercircleprintisallowed,pleaserefertotheVETracDualassemblyguideforadditionaldetailsaboutacceptableDBCsurfacefinish.
VETractDualNVG800A75L4DSCwww.
onsemi.
com4CHARACTERISTICSOFIGBT(Tvj=25°C,UnlessOtherwiseSpecified)ParametersConditionsMinTypMaxUnitVCESATCollectortoEmitterSaturationVoltage(Terminal)VGE=15V,IC=600A,TvJ=25°CTvJ=150°CTvJ=175°CVGE=15V,IC=800A,TvJ=25°CTvJ=150°CTvJ=175°C1.
301.
421.
451.
441.
641.
681.
55VICESCollectortoEmitterLeakageCurrentVGE=0,VCE=750VTvJ=25°CTvJ=175°C81mAmAIGESGate–EmitterLeakageCurrentVCE=0,VGE=±20V400nAVthThresholdVoltageVCE=VGE,IC=500mA4.
65.
56.
2VQGTotalGateChargeVGE=8to15V,VCE=400V1.
9mCRGintInternalgateresistance2WCiesInputCapacitanceVCE=30V,VGE=0V,f=1MHz48nFCoesOutputCapacitanceVCE=30V,VGE=0V,f=1MHz1.
37nFCresReverseTransferCapacitanceVCE=30V,VGE=0V,f=1MHz0.
15nFTd.
onTurnondelay,inductiveloadIC=600A,VCE=400VTvJ=25°CVGE=+15/8VTvJ=150°CRg.
on=4.
7WTvJ=175°C253283287nsTrRisetime,inductiveloadIC=600A,VCE=400VTvJ=25°CVGE=+15/8VTvJ=150°CRg.
on=4.
7WTvJ=175°C94112117nsTd.
offTurnoffdelay,inductiveloadIC=600A,VCE=400VTvJ=25°CVGE=+15/8VTvJ=150°CRg.
off=15WTvJ=175°C760790800nsTfFalltime,inductiveloadIC=600A,VCE=400VTvJ=25°CVGE=+15/8VTvJ=150°CRg.
off=15WTvJ=175°C95140153nsEONTurnOnSwitchingLoss(includingdiodereverserecoveryloss)IC=600A,VCE=400V,VGE=+15/8V,Ls=20nH,Rg.
on=4,7Wdi/dt(TvJ=25°C)=5.
13A/nsdi/dt(TvJ=175°C)=4.
11A/nsTvJ=25°CTvJ=150°CTvJ=175°C22.
4133.
3036.
35mJEOFFTurnOffSwitchingLossIC=600A,VCE=400V,VGE=+15/8V,Ls=20nH,Rg.
off=15Wdv/dt(TvJ=25°C)=2.
81V/nsdv/dt(TvJ=175°C)=2.
11V/nsTvJ=25°CTvJ=150°CTvJ=175°C27.
2237.
1939.
09mJESCMinimumShortCircuitEnergyWithstandVGE=15V,VCC=400VTvJ=25°CTvJ=175°C57.
5JVETractDualNVG800A75L4DSCwww.
onsemi.
com5CHARACTERISTICSOFINVERSEDIODE(TVJ=25°C,UnlessOtherwiseSpecified)ParametersConditionsMinTypMaxUnitVFDiodeForwardVoltage(Terminal)VGE=0V,IC=600A,TvJ=25°CTvJ=150°CTvJ=175°CVGE=0V,IC=800A,TvJ=25°CTvJ=150°CTvJ=175°C1.
401.
301.
301.
481.
441.
421.
60VErrReverseRecoveryEnergyIF=600A,VR=400V,VGE=8V,Rg.
on=4.
7W,di/dt=3.
12A/ns(175°C)TvJ=25°CTvJ=150°CTvJ=175°C4.
0910.
9311.
92mJQRRRecoveredChargeIF=600A,VR=400V,VGE=8V,Rg.
on=4.
7W,di/dt=3.
12A/ns(175°C)TvJ=25°CTvJ=150°CTvJ=175°C18.
7044.
4848.
40mCIrrPeakReverseRecoveryCurrentIF=600A,VR=400V,VGE=8V,Rg.
on=4.
7W,di/dt=3.
12A/ns(175°C)TvJ=25°CTvJ=150°CTvJ=175°C248331337ASENSORCHARACTERISTICS(TVJ=25°C,UnlessOtherwiseSpecified)ParametersConditionsMinTypMaxUnitTsenseTemperaturesenseIF=1mA,TvJ=40°CTvJ=25°CTvJ=150°CTvJ=175°C2.
46(3)2.
962.
541.
761.
612.
60(3)VIsenseCurrentsenseRshunt=5WIC=1600AIC=800AIC=100ARshunt=20WIC=1600AIC=800AIC=100A37920043.
064435194.
0mV3.
MeasuredatchiplevelORDERINGINFORMATIONPartNumberDeviceMarkingPackageShippingNVG800A75L4DSCN875DSCAHPM15CEA(PbFree)6Units/TubeVETractDualNVG800A75L4DSCwww.
onsemi.
com6Figure1.
IGBTOutputCharacteristicFigure2.
IGBTTransferCharacteristicFigure3.
IGBTOutputCharacteristicFigure4.
IGBTOutputCharacteristicVETractDualNVG800A75L4DSCwww.
onsemi.
com7Figure5.
GateChargeCharacteristicFigure6.
CapacitanceCharacteristicFigure7.
EONvs.
IcFigure8.
EONvs.
RgVETractDualNVG800A75L4DSCwww.
onsemi.
com8Figure9.
EOFFvs.
IcFigure10.
EOFFvs.
RgFigure11.
IGBTSwitchingTimesvsIc,TVJ=255CFigure12.
IGBTSwitchingTimesvsIc,TVJ=1755CVETractDualNVG800A75L4DSCwww.
onsemi.
com9Figure13.
ReverseBiasSafeOperatingAreaFigure14.
IGBTTransientThermalImpedanceFigure15.
DiodeForwardCharacteristicFigure16.
DiodeSwitchingLossesvs.
IFVETractDualNVG800A75L4DSCwww.
onsemi.
com10Figure17.
DiodeSwitchingLossesvs.
RgFigure18.
DiodeTransientThermalImpedanceFigure19.
TemperatureSensorCharacteristicFigure20.
CurrentSensorCharacteristicVETractDualNVG800A75L4DSCwww.
onsemi.
com11Figure21.
CurrentSensorCharacteristicFigure22.
MaximumAllowedVCEVETracisatrademarkofSemiconductorComponentsIndustries,LLC(SCILLC)oritssubsidiariesintheUnitedStatesand/orothercountries.
AHPM15CEACASE100DDISSUEADATE09OCT2019GENERICMARKINGDIAGRAM*ZZZ=AssemblyLotCodeAT=Assembly&TestSiteCodeY=YearWW=WorkWeekXXXX=SpecificDeviceCodeNNN=SerialNumber*Thisinformationisgeneric.
Pleaserefertodevicedatasheetforactualpartmarking.
PbFreeindicator,"G"ormicrodot"G",mayormaynotbepresent.
SomeproductsmaynotfollowtheGenericMarking.
MECHANICALCASEOUTLINEPACKAGEDIMENSIONSONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
98AON86580GDOCUMENTNUMBER:DESCRIPTION:ElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromtheDocumentRepository.
Printedversionsareuncontrolledexceptwhenstamped"CONTROLLEDCOPY"inred.
PAGE1OF1AHPM15CEASemiconductorComponentsIndustries,LLC,2018www.
onsemi.
comwww.
onsemi.
com1ONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/PatentMarking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
ONSemiconductorisanEqualOpportunity/AffirmativeActionEmployer.
Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner.
PUBLICATIONORDERINGINFORMATIONTECHNICALSUPPORTNorthAmericanTechnicalSupport:VoiceMail:18002829855TollFreeUSA/CanadaPhone:011421337902910LITERATUREFULFILLMENT:EmailRequeststo:orderlit@onsemi.
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