bidirectionalwww.4411b.com

VBUS05M2-HT1www.
vishay.
comVishaySemiconductorsRev.
1.
4,17-Sep-20191DocumentNumber:85923Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc910002-LineLowCapacitance,BidirectionalandSymmetrical(BiSy)ESDProtectionDiode-FlowThroughDesignMARKING(exampleonly)Bar=cathodemarkingX=datecodeY=typecode(seetablebelow)ADDITIONALRESOURCESFEATURESCompactLLP1006-3LpackageLowpackageheight<0.
4mm2-lineESDprotectionLowleakagecurrentIR<0.
1μALowcapacitance:CD<0.
4pFIdealforhighspeeddatalinelike-HDMI,DisplayPort,eSATA-USB,1394/firewire-ThunderboltESDimmunityacc.
IEC61000-4-2±20kVcontactdischarge±20kVairdischargeSolderingcanbecheckedbystandardvisioninspection,noX-raynecessaryPinplatingNiPdAu(e4)nowhiskergrowthe4-preciousmetal(e.
g.
Ag,Au,NiPd,NiPdAu)(noSn)PATENT(S):www.
vishay.
com/patentsMaterialcategorization:fordefinitionsofcompliancepleaseseewww.
vishay.
com/doc99912PATENT(S):www.
vishay.
com/patentsThisVishayproductisprotectedbyoneormoreUnitedStatesandinternationalpatents.
228151322281421121XY333DDD3D3DModelsORDERINGINFORMATIONDEVICENAMEORDERINGCODETAPEDUNITSPERREEL(8mmTAPEON7"REEL)MINIMUMORDERQUANTITYVBUS05M2-HT1VBUS05M2-HT1-G4-0880008000PACKAGEDATADEVICENAMEPACKAGENAMETYPECODEWEIGHTMOLDINGCOMPOUNDFLAMMABILITYRATINGMOISTURESENSITIVITYLEVELSOLDERINGCONDITIONSVBUS05M2-HT1LLP1006-3L50.
72mgUL94V-0MSLlevel1(accordingJ-STD-020)Peaktemperaturemax.
260°CABSOLUTEMAXIMUMRATINGSPARAMETERTESTCONDITIONSSYMBOLVALUEUNITPeakpulsecurrentAcc.
IEC61000-4-5;tP=8/20μs;singleshotIPPM3.
6APeakpulsepowerAcc.
IEC61000-4-5;tP=8/20μs;singleshotPPP65WESDimmunityContactdischargeacc.
IEC61000-4-2;10pulsesVESD±20kVAirdischargeacc.
IEC61000-4-2;10pulses±20OperatingtemperatureJunctiontemperatureTJ-55to+125°CStoragetemperatureTSTG-55to+150°CVBUS05M2-HT1www.
vishay.
comVishaySemiconductorsRev.
1.
4,17-Sep-20192DocumentNumber:85923Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000APPLICATIONNOTETheVBUS05M2-HT1isatwo-lineESDprotectiondevicewithabidirectionalandsymmetrical(BiSy)breakdownandclampingperformancemadeforapplicationwithavoltageworkingrangeupto±5.
5V.
ThehighESDimmunityandaverylowcapacitancemakesitusableforhighfrequencyapplicationslikeUSB2.
0,USB3.
0,orHDMI.
WiththeVBUS05M2-HT1twohighspeeddatalinescanbeprotectedagainsttransientvoltagesignalslikeESD(electrostaticdischarge).
Connectedtothedataline(pin1andpin2)andtoground(pin3)negativetransientswillbeclampedcloseabovethe5.
5Vworkingrange.
FLOWTHROUGHDESIGNModerndigitaltransmissionlinescanbeclockedupto480Mbit/s(USB2.
0)or1.
65Gbit/s(HDMI).
AtsuchhighdataratesthetransmissionlineslikecablesorthelinetracesonthePCBshavetobeveryhomogeneousregardingtheirsurgeimpedance.
Thisrequireswelldefinedtracedimensionsastracewidthanddistancewhichhavetobecalculateddependingontherequestedsurgeimpedance(e.
g.
50)andthePCBmaterialandlayerdimensions.
Anydeviceconnectedtothedatalines-likeESDprotectiondevices-havetobeconnectedwithminimalchangesinthesetracedimensionsanddistances.
Withthepackageinthesocalled"FlowThroughDesign"thisispossible.
ThelinesarerunningstraightalongthePCBwhiletheVBUS05M2-HT1isplacedontopwithoutanyviaorloops.
SCHEMATICDIAGRAMFig.
AThesimplifiedschematicdiagraminFig.
AshowsthreeidenticalZ-diodeswiththecathodeonpin1,2,or3andcommonanodes.
InrealityeachZ-diodeconsistofoneZ-diodefortheadjustmentofthebreakdownvoltage,andtwolowcapacitanceswitchingdiodeswhichprovidethelowcapacitance.
PositivetransientswillbeclampedthroughtheswitchingdiodeDPandtheZ-diodeZDwhilenegativetransientswillbeclampedthroughtheswitchingdiodeDN.
ELECTRICALCHARACTERISTICS(pin1orpin2topin3;inbothdirections)(Tamb=25°C,unlessotherwisespecified)PARAMETERTESTCONDITIONS/REMARKSSYMBOLMIN.
TYP.
MAX.
UNITProtectionpathsNumberoflineswhichcanbeprotectedNchannel--2linesReversestand-offvoltageMax.
reverseworkingvoltageVRWM--5.
5VReversevoltageAtIR=0.
1μAVR5.
5--VReversecurrentAtVRWM=5.
5VIR-<0.
0010.
1μAReversebreakdownvoltageAtIR=1mAVBR7.
58.
59.
5VReverseclampingvoltageAtIPP=1AVC-1113VAtIPP=IPPM=3.
6AVC-1518VClampingvoltageTransmissionlinepulse(TLP),tp=100nsITLP=8AVC-TLP-19-VTransmissionlinepulse(TLP),tp=100nsITLP=16AVC-TLP-27-VDynamicresistanceTransmissionlinepulse(TLP),tp=100nsRDYN-1-CapacitanceAtVR=0V;f=1MHzCD-0.
350.
4pFAtVR=3.
3V;f=1MHz-0.
350.
4pF123DNDPZD=VBUS05M2-HT1www.
vishay.
comVishaySemiconductorsRev.
1.
4,17-Sep-20193DocumentNumber:85923Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(Tamb=25°C,unlessotherwisespecified)Fig.
1-ESDDischargeCurrentWaveFormacc.
IEC61000-4-2(330/150pF)Fig.
2-8/20μsPeakPulseCurrentWaveFormacc.
IEC61000-4-5Fig.
3-TypicalCapacitancevs.
ReverseVoltageFig.
4-TypicalReverseVoltagevs.
ReverseCurrentFig.
5-TypicalPeakClampingVoltagevs.
PeakPulseCurrentFig.
6-TypicalPeakForwardVoltagevs.
ForwardCurrent10100100010000020406080100120-100102030405060708090100AxisTitle1stline2ndline2ndlineIESD(%)t(ns)2ndlineRisetime=0.
7nsto1ns53272055710100100010000020406080100010203040AxisTitle1stline2ndline2ndlineIPPM(%)t(s)2ndline20sto50%8sto100%205481010010001000000.
20.
40.
60.
810123456AxisTitle1stline2ndline2ndlineCD(pF)VR(V)2ndlinef=1MHzPin1topin3orpin2topin3inbothdirections228160123456789100.
010.
11101001000100002ndlineVR(V)IR(A)2ndline22887Pin1to3orpin2to3inbothdirections101001000100000510152025012345AxisTitle1stline2ndline2ndlineVC(V)IPP(A)2ndlineMeasuredaccordingIEC61000-4-5(8/20s-waveform)22818Pin1topin3orpin2topin3inbothdirections010203040506001020302ndlineVC-TLP(V)ITLP(A)2ndlineTransmissionlinepulse(TLP):tp=100ns22819VBUS05M2-HT1www.
vishay.
comVishaySemiconductorsRev.
1.
4,17-Sep-20194DocumentNumber:85923Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000Fig.
7-IsolationBetweenBothChannelsFig.
8-TypicalInsertionLoss-80-70-60-50-40-30-20-1001101001000100002ndlineS12;S21(dB)f(MHz)2ndline23163-10-8-6-4-201101001000100002ndlineS11;S22(dB)f(MHz)2ndline23164VBUS05M2-HT1www.
vishay.
comVishaySemiconductorsRev.
1.
4,17-Sep-20195DocumentNumber:85923Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000PACKAGEDIMENSIONSinmillimeters:LLP1006-3LFootprintrecommendation:Documentno.
:S8-V-3906.
04-044(4)Package=chipDimensionsinmmCreated-Date:03.
Sep.
201522820AA1ELeDABMillimetersMin.
Max.
0.
95D1.
050.
550.
650.
330.
4000.
20.
60.
050.
200.
30EAA1bLe0.
30.
30.
60.
7b0.
2VBUS05M2-HT1www.
vishay.
comVishaySemiconductorsRev.
1.
4,17-Sep-20196DocumentNumber:85923Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000CARRIERTAPEinmillimeters:LLP1006ORIENTATIONINCARRIERTAPE:LLP1006-3LD01.
55±0.
050.
5+0.
10.
0D1(I)P22±0.
05(II)P04±0.
1E11.
75±0.
1T0.
2±0.
05P1A0A0MillimetersB0K0FP1W(III)FWB0K0REF.
3°AA-AANotes(I)Measuredfromcentrelineofsprocketholetocentrelineofpocket(II)Cumulativetoleranceof10sprocketholeis±0.
20(III)Measuredfromcentrelineofsprocketholetocentrelineofpocket(IV)Othermaterialavailable0.
70±0.
051.
15±0.
050.
47±0.
053.
50±0.
052.
00±0.
18.
00±0.
1Doc.
no.
S8-V-3906.
04-016(3)Created-Date:12-Sep-200722823Doc.
no.
S8-V-3906.
04-017(4)Created-Date:02-May-201722821LLP1006-3LTopviewPadlayout-viewfromtopseenatbottomsideUnreelingdirectionPin1markAB1LegalDisclaimerNoticewww.
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comVishayRevision:01-Jan-20211DocumentNumber:91000DisclaimerALLPRODUCT,PRODUCTSPECIFICATIONSANDDATAARESUBJECTTOCHANGEWITHOUTNOTICETOIMPROVERELIABILITY,FUNCTIONORDESIGNOROTHERWISE.
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