AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,intellectualpropertymattersandotherimportantdisclaimers.
PRODUCTIONDATA.
EnglishDataSheet:SCDS192SN74CBTU4411ZHCSI43B–APRIL2005–REVISEDAPRIL2018SN74CBTU441111位位4选选1多多路路复复用用器器/多多路路信信号号分分离离器器具具有有电电荷荷泵泵和和预预充充电电输输出出的的1.
8VDDR-II开开关关11特特性性1支持SSTL_18信号传输级别适用于DDR-II应用D端口输出由偏置电压(VBIAS)预充用于控制输入的内部终端高带宽(最低400MHz)平缓的低导通电阻(ron)特性,(ron=最大17)内部400下拉电阻器低差分,上升沿或下降沿偏斜锁断性能超过100mA,符合JESD78II类规范的要求2应应用用ATCA解决方案自动体外除颤器自适应照明血液气体分析器:便携式蓝牙耳机CT扫描仪摄像机:监控模拟化学和气体传感器DLP3D机器视觉和光纤网络3说说明明SN74CBTU4411器件是一种具备低导通状态电阻(ron)的高带宽SSTL_18兼容型FET多路复用器/多路信号分离器.
此器件借助内部电荷泵提高通道晶体管的栅极电压,提供平缓的低ron.
平缓的低ron可实现最短传播延迟,并且支持数据输入/输出(I/O)端口的轨至轨信号传输.
此外,该器件还具备极低的数据I/O电容,能够尽可能减少数据总线上的容性负载以及信号失真现象.
通道间相互匹配的ron和I/O电容会形成超低差分以及上升沿或下降沿偏斜.
得益于此,该器件可在DDR-II应用中表现出最佳性能.
器器件件信信息息(1)器器件件型型号号封封装装封封装装尺尺寸寸SN74CBTU4411ZSTNFBGA(72)7.
00mm*7.
00mm(1)如需了解所有可用封装,请参阅数据表末尾的可订购产品附录.
每每个个FET开开关关(SW1)的的简简化化原原理理图图A.
适用于端口H0到H9B.
适用于端口D0到D9C.
r3+ron(M3)=400(典型值).
D.
EN是应用于开关的内部启用信号.
每每个个FET开开关关(SW2)的的简简化化原原理理图图A.
EN_DQS1、EN_DQS2、EN1和EN2是应用于开关的内部启用信号.
B.
r4+ron(M4)=1k(典型值).
C.
r5+ron(M5)=400(典型值).
D.
r6+ron(M6)=2.
3k(典型值).
2SN74CBTU4411ZHCSI43B–APRIL2005–REVISEDAPRIL2018www.
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cnCopyright2005–2018,TexasInstrumentsIncorporated目目录录1特特性性.
12应应用用.
13说说明明.
14修修订订历历史史记记录录25PinConfigurationandFunctions.
36Specifications.
66.
1AbsoluteMaximumRatings66.
2ESDRatings.
66.
3RecommendedOperatingConditions.
66.
4ThermalInformation.
76.
5ElectricalCharacteristics.
76.
6SwitchingCharacteristics.
86.
7TypicalCharacteristic.
87ParameterMeasurementInformation97.
1EnableandDisableTimes.
97.
2SkewandPropagationDelayTimes.
108DetailedDescription118.
1Overview118.
2FunctionalBlockDiagram118.
3FeatureDescription.
128.
4DeviceFunctionalModes.
129ApplicationandImplementation139.
1ApplicationInformation.
139.
2TypicalApplication1310PowerSupplyRecommendations1411Layout.
1511.
1LayoutGuidelines1511.
2LayoutExample1512器器件件和和文文档档支支持持1612.
1文档支持.
1612.
2接收文档更新通知1612.
3社区资源.
1612.
4商标.
1612.
5静电放电警告.
1612.
6术语表1613机机械械、、封封装装和和可可订订购购信信息息.
164修修订订历历史史记记录录注:之前版本的页码可能与当前版本有所不同.
ChangesfromRevisionA(February2016)toRevisionBPageChangedtheVBIASMAXvalueFrom:0.
33*VDDTo:VDDintheRecommendedOperatingConditionstable.
6ChangesfromOriginal(April2005)toRevisionAPage添加了ESD额定值表、特性说明部分、器件功能模式、应用和实施部分、电源相关建议部分,布局部分、器件和文档支持部分以及机械、封装和可订购信息部分.
1RemovedPinAssignmentstableduetoupdatedPinOutDrawing.
33SN74CBTU4411www.
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cnZHCSI43B–APRIL2005–REVISEDAPRIL2018Copyright2005–2018,TexasInstrumentsIncorporated5PinConfigurationandFunctionsZSTPackage72-PinNFBGATopViewPinFunctionsPINI/ODESCRIPTIONNAMENO.
S0B2ISelectinputcontrolS1A1ISelectinputcontrolVDDA3,B3,L10—PowersupplyGNDB4,B9,F10,K7,K2,G2,D2—Ground4SN74CBTU4411ZHCSI43B–APRIL2005–REVISEDAPRIL2018www.
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cnCopyright2005–2018,TexasInstrumentsIncorporatedPinFunctions(continued)PINI/ODESCRIPTIONNAMENO.
TCB1ITerminationcontrolinputDQS_ENA2ID10portoutputvoltagecontrolH0B5I/OHport0H1B8I/OHport1H2B10I/OHport2H3D10I/OHport3H4G10I/OHport4H5K10I/OHport5H6K8I/OHport6H7K5I/OHport7H8K3I/OHport8H9J2I/OHport9H10F2I/OHport100D0A4I/OD0port01D0A5I/OD0port12D0A6I/OD0port23D0B6I/OD0port30D1B7I/OD1port01D1A7I/OD1port12D1A8I/OD1port23D1A9I/OD1port30D2A10I/OD2port01D2A11I/OD2port12D2B11I/OD2port23D2C11I/OD2port30D3C10I/OD3port01D3D11I/OD3port12D3E10I/OD3port23D3E11I/OD3port30D4F11I/OD4port01D4G11I/OD4port12D4H10I/OD4port23D4H11I/OD4port30D5J11I/OD5port01D5J10I/OD5port12D5K11I/OD5port23D5L11I/OD5port30D6K9I/OD6port01D6L9I/OD6port12D6L8I/OD6port23D6L7I/OD6port30D7K6I/OD7port01D7L6I/OD7port12D7L5I/OD7port23D7L4I/OD7port30D8K4I/OD8port05SN74CBTU4411www.
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cnZHCSI43B–APRIL2005–REVISEDAPRIL2018Copyright2005–2018,TexasInstrumentsIncorporatedPinFunctions(continued)PINI/ODESCRIPTIONNAMENO.
1D8L3I/OD8port12D8L2I/OD8port23D8L1I/OD8port30D9K1I/OD9port01D9J1I/OD9port12D9H2I/OD9port23D9H1I/OD9port30D10G1I/OD10port01D10F1I/OD10port12D10E1I/OD10port23D10E2I/OD10port3ENnC2IActivelowenableinputVBIASD1—BiasvoltageVREFC1—Referencevoltage6SN74CBTU4411ZHCSI43B–APRIL2005–REVISEDAPRIL2018www.
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cnCopyright2005–2018,TexasInstrumentsIncorporated(1)StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.
Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommendedOperatingConditionsisnotimplied.
Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
(2)Allvoltagesarewithrespecttogroundunlessotherwisespecified.
(3)Theinputandoutputvoltageratingsmaybeexceedediftheinputandoutputclamp-currentratingsareobserved.
(4)VIandVOareusedtodenotespecificconditionsforVI/O.
(5)IIandIOareusedtodenotespecificconditionsforII/O.
6Specifications6.
1AbsoluteMaximumRatingsoveroperatingfree-airtemperaturerange(unlessotherwisenoted)(1)MINMAXUNITVDDSupplyvoltage–0.
52.
5VVINControlinputvoltage(2)(3)–0.
52.
5VVI/OSwitchI/Ovoltage(2)(3)(4)–0.
52.
5VIIKControlinputclampcurrentVIN0±50mAII/OKI/OportclampcurrentVI/O0±50mAII/OON-stateswitchcurrent(5)±100mAContinuouscurrentthroughVDDorGNDpins±100mATJJunctiontemperature150°CTstgStoragetemperature–65150°C(1)JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess.
Manufacturingwithlessthan500-VHBMispossiblewiththenecessaryprecautions.
(2)JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess.
Manufacturingwithlessthan250-VCDMispossiblewiththenecessaryprecautions.
6.
2ESDRatingsVALUEUNITV(ESD)ElectrostaticdischargeHuman-bodymodel(HBM),perANSI/ESDA/JEDECJS-001(1)±2500VCharged-devicemodel(CDM),perJEDECspecificationJESD22-C101(2)±750(1)AllunusedcontrolinputsofthedevicemustbeheldatVDDorGNDtoensureproperdeviceoperation.
SeetheTIapplicationreport,ImplicationsofSloworFloatingCMOSInputs(SCBA004).
6.
3RecommendedOperatingConditionsoveroperatingfree-airtemperaturerange(unlessotherwisenoted)(1)MINNOMMAXUNITVDDSupplyvoltage1.
71.
81.
9VVREFReferencesupplyvoltage0.
49*VDD0.
5*VDD0.
51*VDDVVBIASBIASsupplyvoltage00.
3*VDDVDDVVIHHigh-levelcontrolinputvoltageSVREF+250mVVEN,TX,DQS_EN0.
65*VDDVILLow-levelcontrolinputvoltageSVREF–250mVVEN,TX,DQS_EN0.
35*VDDVI/ODatainput/outputvoltage0VDDVTAOperatingfree-airtemperature085°C7SN74CBTU4411www.
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cnZHCSI43B–APRIL2005–REVISEDAPRIL2018Copyright2005–2018,TexasInstrumentsIncorporated(1)Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplicationreport,SPRA953.
6.
4ThermalInformationTHERMALMETRIC(1)SN74CBTU4411UNITZST(NFBGA)72PINSRθJAJunction-to-ambientthermalresistance97°C/WRθJC(top)Junction-to-case(top)thermalresistance34.
4°C/WRθJBJunction-to-boardthermalresistance67.
2°C/WψJTJunction-to-topcharacterizationparameter2°C/WψJBJunction-to-boardcharacterizationparameter69.
1°C/WRθJC(bot)Junction-to-case(bottom)thermalresistance—°C/W(1)VINandIINrefertocontrolinputs.
VI,VO,II,andIOrefertodatapins.
(2)VIKreferstotheclampvoltageduetotheinternaldiode,whichisconnectedfromeachcontrolinputtoGND.
(3)FortheleakagecurrenttestonS0andS1,ENandTCinputsaresettolow.
(4)ForI/Oports,theparameterIOZincludestheinputleakagecurrent.
IOZappliesonlytotheHport.
(5)ThisfrequencyofS0andS1inputs,forexample,foradataI/Orateof533Mbit/s,withaburstof4,therequiredfrequencyisforS0orS1inputis66MHz(533/8).
ThetotalICCduetoswitchingS0,S1willbeapproximately27mA(66MHz*0.
4mA/MHz).
(6)MeasuredbythevoltagedropbetweentheDandHpinsattheindicatedcurrentthroughtheswitch.
ON-stateresistanceisdeterminedbythelowerofthevoltagesofthetwo(DorH)pins.
(7)Δron(flat)isthedifferenceofmaximumronandminimumronforaspecificchannelinaspecificdevice.
6.
5ElectricalCharacteristicsMinimumandmaximumlimitsapplyforTA=0°Cto85°C(unlessotherwisenoted).
TypicallimitsapplyforVDD=1.
8VandTA=25°C(unlessotherwisenoted).
(1)PARAMETERTESTCONDITIONSMINTYPMAXUNITVIK(2)Controlinputs(3)VDD=1.
7V,IIN=–18mA–1.
8VVBIAS_DQSD10VDD=1.
7V,DQS_EN=VDD1.
11.
275VVOHD10VDD=1.
7V,DQS_EN=VDD,EN=VDD,IO=100A1.
61.
8VIINControlinputs(3)VDD=1.
9V,VIN=VDDorGND±1AIOZ(4)VDD=1.
9V,VO=0to1.
9V,VI=0,SwitchOFF,VBIASopen±10AICCVDD=1.
9V,TC=GND,EN=GND,II/O=0,S0orS1inputswitchingat50%dutycycles,DataI/Oareopen0.
72.
5mAEN=VDD500AICCDVDD=1.
9V,TC=GND,EN=GND,II/O=0,S0orS1inputswitchingat50%dutycycle,DataI/Oareopen0.
5mA/MHz(5)CinSportVDD=1.
9V,TC=GND,EN=GND,VIN=VREF±250mV2.
53.
5pFEN,TC,DQS_ENinputsVDD=1.
9V,VIN=0or1.
9V2.
5Cio(OFF)HportVI/O=0.
5*VDD±0.
4V,SwitchOFF,VBIASopen2.
5pFCio(ON)VI/O=0.
5*VDD±0.
4V,SwitchON,VBIAS=GND4.
6pFron(6)VDD=1.
7V,VI=0.
5*VDD±0.
5V,IO=10mA61017Δron(flat)(7)VDD=1.
7V,DQS_EN=VDD,IO=10mAVI=0.
5VDD±0.
25V1.
53VI=0.
5VDD±0.
5V2.
55rtermSportVDD=1.
7V110160210rpulldownD0–D10VDD=1.
7VDQS_EN=GND280400520D10DQS_EN=VDD,EN=GND160023003000rpullupD10VDD=1.
7V,DQS_EN=VDD,EN=GND700100013008SN74CBTU4411ZHCSI43B–APRIL2005–REVISEDAPRIL2018www.
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cnCopyright2005–2018,TexasInstrumentsIncorporated(1)EN=GND,TC=GND(2)VBIAS=open(3)tstartisthetimerequiredforthecharge-pumpcircuitoutputvoltagetoreachasteadystatevalueafterVDDisapplied.
6.
6SwitchingCharacteristicsTA=0°Cto85°C(unlessotherwisenoted)(seeFigure2andFigure3)PARAMETERTESTCONDITIONSMINTYPMAXUNITfmaxDorHport400MHzSport(1)84tpdFromDorH(input)toDorH(output)297psten(tPZL,tPZH)(2)FromS(input)toD(output)7502100pstdis(tPLZ,tPHZ)(2)FromS(input)toD(output)7502100pstosk85pstesk40pststart(3)20s6.
7TypicalCharacteristicVIH=1.
7VVIL=0VH0to0D0at–10mAFigure1.
ON-StateResistanceAcrossTemperature9SN74CBTU4411www.
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cnZHCSI43B–APRIL2005–REVISEDAPRIL2018Copyright2005–2018,TexasInstrumentsIncorporated7ParameterMeasurementInformation7.
1EnableandDisableTimesA.
CLincludesprobeandjigcapacitance.
B.
Outputcontrolappliestoselect(S0,S1)inputs.
C.
Waveform1isforanoutputwithinternalconditionssuchthattheoutputislow,exceptwhendisabledbytheoutputcontrol.
Waveform2isforanoutputwithinternalconditionssuchthattheoutputishigh,exceptwhendisabledbytheoutputcontrol.
D.
Allinputpulsesaresuppliedbygeneratorshavingthefollowingcharacteristics:ZOS=50,risingandfallingedgerateis1V/ns.
E.
Theoutputsaremeasuredoneatatime,withonetransitionpermeasurement.
F.
tPLZandtPHZarethesameastdis.
G.
tPZLandtPZHarethesameasten.
Figure2.
TestCircuitandVoltageWaveforms10SN74CBTU4411ZHCSI43B–APRIL2005–REVISEDAPRIL2018www.
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cnCopyright2005–2018,TexasInstrumentsIncorporated7.
2SkewandPropagationDelayTimesA.
CLincludesprobeandjigcapacitance.
B.
toskisthedifferenceinoutputvoltagefromchanneltochannelinaspecificdevice.
C.
tPLHandtPHLarethesameastpdandtesk=|tPLH–tPHL|D.
Allinputpulsesaresuppliedbygeneratorshavingthefollowingcharacteristics:ZOS=50,risingandfallingedgerateis1V/ns.
E.
Theoutputsaremeasuredoneatatime,withonetransitionpermeasurement.
Figure3.
TestCircuitandVoltageWaveforms11SN74CBTU4411www.
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cnZHCSI43B–APRIL2005–REVISEDAPRIL2018Copyright2005–2018,TexasInstrumentsIncorporated8DetailedDescription8.
1OverviewTheSN74CBTU4411deviceisorganizedasan11-bit1-of-4multiplexer/demultiplexerwithasingleswitch-enable(EN)input.
WhenENislow,theswitchisenabledandtheHportisconnectedtooneoftheDports.
PortsD0toD9forthedisabledchannelsareconnectedtoVBIASthrougha400-resistor.
DQS_ENdeterminestheoutputvoltageforthedisabledD10ports.
WhenDQS_ENislow,thisvoltageisVBIAS.
WhenDQS_ENishigh,thedisabledD10portsareconnectedtoaninternalvoltage(VBIAS_DQS)source,whichisapproximatelyequalto0.
7VDD.
WhenENishigh,allthechannelsaredisabled.
PortsD0toD9areconnectedtoVBIAS.
FortheD10port,thedisabledoutputvoltageisdeterminedbytheDQS_ENinput.
WhenDQS_ENislow,thisvoltageisVBIAS.
WhenDQS_ENishigh,thisvoltageisVDD8.
2FunctionalBlockDiagramA.
r1+ron(M1),r2+ron(M2)=160typicalFigure4.
LogicDiagram(PositiveLogic)12SN74CBTU4411ZHCSI43B–APRIL2005–REVISEDAPRIL2018www.
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cnCopyright2005–2018,TexasInstrumentsIncorporated(1)VBIAS_DQSisaninternalvoltagecondition.
8.
3FeatureDescriptionTheselect(S0,S1)inputscontrolthedatapathofeachmultiplexer/demultiplexer.
TheENandTCinputsdeterminetheinternalterminationforS0andS1inputs.
WhenENislow,theterminationisdeterminedbytheTCinput.
WhenbothENandTCarelow,terminationresistorsaredisconnectedfromtheSinputs.
WhenENislowandTCishigh,bothpullupandpulldownresistorsareconnectedtotheSinputs.
WhenENishigh,onlythepulldownterminationresistorsareconnectedtotheSinputs,regardlessofthevoltagelevelattheTCinput.
8.
4DeviceFunctionalModesTable1andTable2liststhefunctionalmodesoftheSN74CBTU4411.
Table1.
FunctionTableINPUTSINPUT/OUTPUTHnFUNCTIONENDQS_ENS1S0LLLL0DnHn=0Dn1Dn,2Dn,3DnconnectedtoVBIASLLLH1DnHn=1Dn0Dn,2Dn,3DnconnectedtoVBIASLLHL2DnHn=2Dn0Dn,1Dn,3DnconnectedtoVBIASLLHH3DnHn=3Dn0Dn,1Dn,2DnconnectedtoVBIASLHLL0DnH0–H9=0D0–0D91D0–1D9,2D0–2D9,3D0–3D9connectedtoVBIASH10=0D101D10,2D10,3D10connectedtoVBIAS_DQS(1)LHLH1DnH0–H9=1D0–1D90D0–0D9,2D0–2D9,3D0–3D9connectedtoVBIASH10=1D100D10,2D10,3D10connectedtoVBIAS_DQS(1)LHHL2DnH0–H9=2D0–2D90D0–0D9,1D0–1D9,3D0–3D9connectedtoVBIASH10=2D100D10,1D10,3D10connectedtoVBIAS_DQS(1)LHHH3DnH0–H9=3D0–3D90D0–0D9,1D0–1D9,2D0–2D9connectedtoVBIASH10=3D100D10,1D10,2D10connectedtoVBIAS_DQS(1)HLXXZ0Dn,1Dn,2Dn,3DnconnectedtoVBIASHHXXZ0D0–0D9,1D0–1D9,2D0–2D9,3D0–3D9connectedtoVBIAS0D10,1D10,2D10,3D10connectedtoVDDTable2.
FunctionTableContinuedINPUTSFUNCTIONENTCLLTerminationresistorsdisconnectedfromSinputsLHTerminationresistorsconnectedwithSinputsHXPulldownterminationresistorconnectedandpullupterminationresistordisconnectedfromtheSinputs13SN74CBTU4411www.
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cnZHCSI43B–APRIL2005–REVISEDAPRIL2018Copyright2005–2018,TexasInstrumentsIncorporated9ApplicationandImplementationNOTEInformationinthefollowingapplicationssectionsisnotpartoftheTIcomponentspecification,andTIdoesnotwarrantitsaccuracyorcompleteness.
TI'scustomersareresponsiblefordeterminingsuitabilityofcomponentsfortheirpurposes.
Customersshouldvalidateandtesttheirdesignimplementationtoconfirmsystemfunctionality.
9.
1ApplicationInformationTheSN74CBTU4411issuitableforDDR-IIapplicationswherehigh-bandwidthisrequired.
ThisdevicehaslowandflatONresistanceandhaveinternalterminationcontrolinputs.
TheD-portsareprechargedbyBiasvoltage.
9.
2TypicalApplicationSN74CBTU4411isan11bit,1:4Muxandsuitableforhigh-bandwidthapplications.
Figure5.
TypicalApplicationSchematic9.
2.
1DesignRequirementsSN74CBTU4411supports400-MHzbandwidthontheDorHportsand84MHzontheSport.
TheEnablecontrolfromthemastermustbeactivatedanddependingontheselectpins,thedataistransferredintooneoftheslaves0to3.
TheEnablecontrolathighwilltristatetheInput/outputasperthefunctionaltable.
SeeRecommendedOperatingConditionsandAbsoluteMaximumRatingsforothervoltage,currentandhandlingparameters.
14SN74CBTU4411ZHCSI43B–APRIL2005–REVISEDAPRIL2018www.
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cnCopyright2005–2018,TexasInstrumentsIncorporatedTypicalApplication(continued)9.
2.
2DetailedDesignProcedureTheHportsignalfromthemastercangoto1ofthe4slaveportsdependingontheselectinputsS0andS1.
TheVBIASandVREFcanbedeterminedfromtheRecommendedOperatingConditions.
1.
RecommendedInputConditions–Forspecifiedhighandlowlevelsforalltheinputcontrolpins,seeVIHandVILintheRecommendedOperatingConditions.
–InputsarenotovervoltagetolerantandshouldbebelowthevalidVDD.
2.
RecommendInput/OutputConditions–TheabsolutemaximumcontinuousonstateswitchcurrentforanyI/Oshouldnotexceed±100mA–TheI/OvoltagerangeshouldnotbeaboveVDDandbelowground.
9.
2.
3ApplicationCurveVCC=1.
9VTA=25°CFigure6.
SupplyCurrent(Typical)vsFrequencyData10PowerSupplyRecommendationsThepowersupplycanbeanyvoltagebetweentheminimumandmaximumsupplyvoltageratinglocatedintheRecommendedOperatingConditions.
EachVCCpinshouldhaveagoodbypasscapacitortopreventpowerdisturbance.
Fordeviceswithasinglesupply,TIrecommendsa0.
1-μFcapacitor.
IftherearemultipleVCCpins,TIrecommendsa0.
01-μFor0.
022-μFcapacitorforeachpowerpin.
Itisacceptabletoparallelmultiplebypasscapacitorstorejectdifferentfrequenciesofnoise.
A0.
1-μFand1-μFcapacitorsarecommonlyusedinparallel.
Thebypasscapacitorshouldbeinstalledasclosetothepowerpinaspossibleforbestresults.
15SN74CBTU4411www.
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cnZHCSI43B–APRIL2005–REVISEDAPRIL2018版权2005–2018,TexasInstrumentsIncorporated11Layout11.
1LayoutGuidelinesWhenusingmultiplebitlogicdevices,inputsshouldnotfloat.
Inmanycases,functionsorpartsoffunctionsofdigitallogicdevicesareunused.
Someexamplesarewhenonlytwoinputsofatriple-inputANDgateareused,orwhenonly3ofthe4-buffergatesareused.
Suchinputpinsshouldnotbeleftunconnectedbecausetheundefinedvoltagesattheoutsideconnectionsresultinundefinedoperationalstates.
Figure7specifiestherulesthatmustbeobservedunderallcircumstances.
Allunusedinputsofdigitallogicdevicesmustbeconnectedtoahighorlowbiastopreventthemfromfloating.
Thelogiclevelthatshouldbeappliedtoanyparticularunusedinputdependsonthefunctionofthedevice.
GenerallytheyaretiedtoGNDorVCC,whichevermakesmoresenseorismoreconvenient.
Itisacceptabletofloatoutputsunlessthepartisatransceiver.
Ifthetransceiverhasanoutputenablepin,itdisablestheoutputssectionofthepartwhenasserted.
ThisdoesnotdisabletheinputsectionoftheI/Os,sotheyalsocannotfloatwhendisabled.
11.
2LayoutExampleFigure7.
LayoutDiagram16SN74CBTU4411ZHCSI43B–APRIL2005–REVISEDAPRIL2018www.
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cn版权2005–2018,TexasInstrumentsIncorporated12器器件件和和文文档档支支持持12.
1文文档档支支持持12.
1.
1相相关关文文档档如需相关文档,请参阅应用报告《慢速或浮点CMOS输入的影响》(SCBA004).
12.
2接接收收文文档档更更新新通通知知要接收文档更新通知,请导航至TI.
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cn上的器件产品文件夹.
单击右上角的通知我进行注册,即可每周接收产品信息更改摘要.
有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录.
12.
3社社区区资资源源下列链接提供到TI社区资源的连接.
链接的内容由各个分销商"按照原样"提供.
这些内容并不构成TI技术规范,并且不一定反映TI的观点;请参阅TI的《使用条款》.
TIE2E在在线线社社区区TI的的工工程程师师对对工工程程师师(E2E)社社区区.
.
此社区的创建目的在于促进工程师之间的协作.
在e2e.
ti.
com中,您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题.
设设计计支支持持TI参参考考设设计计支支持持可帮助您快速查找有帮助的E2E论坛、设计支持工具以及技术支持的联系信息.
12.
4商商标标E2EisatrademarkofTexasInstruments.
Allothertrademarksarethepropertyoftheirrespectiveowners.
12.
5静静电电放放电电警警告告这些装置包含有限的内置ESD保护.
存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止MOS门极遭受静电损伤.
12.
6术术语语表表SLYZ022—TI术语表.
这份术语表列出并解释术语、缩写和定义.
13机机械械、、封封装装和和可可订订购购信信息息以下页面包含机械、封装和可订购信息.
这些信息是指定器件的最新可用数据.
数据如有变更,恕不另行通知,且不会对此文档进行修订.
如需获取此数据表的浏览器版本,请参阅左侧的导航栏.
PACKAGEOPTIONADDENDUMwww.
ti.
com11-Jan-2021Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesSN74CBTU4411ZSTRACTIVENFBGAZST722000RoHS&GreenSNAGCULevel-3-260C-168HR0to85CTU4411(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsof<=1000ppmthreshold.
Antimonytrioxidebasedflameretardantsmustalsomeetthe<=1000ppmthresholdrequirement.
(3)MSL,PeakTemp.
-TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclassifications,andpeaksoldertemperature.
(4)Theremaybeadditionalmarking,whichrelatestothelogo,thelottracecodeinformation,ortheenvironmentalcategoryonthedevice.
(5)MultipleDeviceMarkingswillbeinsideparentheses.
OnlyoneDeviceMarkingcontainedinparenthesesandseparatedbya"~"willappearonadevice.
IfalineisindentedthenitisacontinuationofthepreviouslineandthetwocombinedrepresenttheentireDeviceMarkingforthatdevice.
(6)Leadfinish/Ballmaterial-OrderableDevicesmayhavemultiplematerialfinishoptions.
Finishoptionsareseparatedbyaverticalruledline.
Leadfinish/Ballmaterialvaluesmaywraptotwolinesifthefinishvalueexceedsthemaximumcolumnwidth.
ImportantInformationandDisclaimer:TheinformationprovidedonthispagerepresentsTI'sknowledgeandbeliefasofthedatethatitisprovided.
TIbasesitsknowledgeandbeliefoninformationprovidedbythirdparties,andmakesnorepresentationorwarrantyastotheaccuracyofsuchinformation.
Effortsareunderwaytobetterintegrateinformationfromthirdparties.
TIhastakenandcontinuestotakereasonablestepstoproviderepresentativeandaccurateinformationbutmaynothaveconducteddestructivetestingorchemicalanalysisonincomingmaterialsandchemicals.
TIandTIsuppliersconsidercertaininformationtobeproprietary,andthusCASnumbersandotherlimitedinformationmaynotbeavailableforrelease.
InnoeventshallTI'sliabilityarisingoutofsuchinformationexceedthetotalpurchasepriceoftheTIpart(s)atissueinthisdocumentsoldbyTItoCustomeronanannualbasis.
TAPEANDREELINFORMATION*AlldimensionsarenominalDevicePackageTypePackageDrawingPinsSPQReelDiameter(mm)ReelWidthW1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W(mm)Pin1QuadrantSN74CBTU4411ZSTRNFBGAZST722000330.
016.
47.
37.
31.
512.
016.
0Q1PACKAGEMATERIALSINFORMATIONwww.
ti.
com30-Apr-2018PackMaterials-Page1*AlldimensionsarenominalDevicePackageTypePackageDrawingPinsSPQLength(mm)Width(mm)Height(mm)SN74CBTU4411ZSTRNFBGAZST722000336.
6336.
631.
8PACKAGEMATERIALSINFORMATIONwww.
ti.
com30-Apr-2018PackMaterials-Page2重要声明和免责声明TI提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,不保证没有瑕疵且不做出任何明示或暗示的担保,包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担保.
这些资源可供使用TI产品进行设计的熟练开发人员使用.
您将自行承担以下全部责任:(1)针对您的应用选择合适的TI产品,(2)设计、验证并测试您的应用,(3)确保您的应用满足相应标准以及任何其他安全、安保或其他要求.
这些资源如有变更,恕不另行通知.
TI授权您仅可将这些资源用于研发本资源所述的TI产品的应用.
严禁对这些资源进行其他复制或展示.
您无权使用任何其他TI知识产权或任何第三方知识产权.
您应全额赔偿因在这些资源的使用中对TI及其代表造成的任何索赔、损害、成本、损失和债务,TI对此概不负责.
TI提供的产品受TI的销售条款(https:www.
ti.
com.
cn/zh-cn/legal/termsofsale.
html)或ti.
com.
cn上其他适用条款/TI产品随附的其他适用条款的约束.
TI提供这些资源并不会扩展或以其他方式更改TI针对TI产品发布的适用的担保或担保免责声明.
IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2021德州仪器半导体技术(上海)有限公司
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