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IDC05S60CEEditedbyINFINEONTechnologies,IFAGIPCTDVLS,L4724E,Edition1.
2,05.
09.
20122ndgenerationthinQ!
TMSiCSchottkyDiodeFeatures:RevolutionarySemiconductorMaterial-SiliconCarbideSwitchingBehaviourBenchmarkNoReverseRecovery/NoForwardRecoveryTemperatureIndependentSwitchingBehaviourQualifiedAccordingtoJEDEC1)BasedonTargetApplicationsApplications:SMPS,PFC,snubberACChipTypeVRIFnDieSizePackageIDC05S60CE600V5A1.
45x1.
162mm2sawnonfoilMechanicalParametersDiesize1.
45x1.
162mm2Areatotal1.
68Anodepadsize1.
213x0.
925Thickness355mWafersize100mmMax.
possiblechipsperwafer4051PassivationfrontsidePhotoimidePadmetal3200nmAlSiCuBacksidemetalNiAg–systemDiebondElectricallyconductiveepoxyglueandsoftsolderWirebondAl,500mRejectinkdotsize0.
65mm;max1.
2mmStorageenvironment1)fororiginalandsealedMBBbagsAmbientatmosphereair,Temperature17°C–25°C,99%Nitrogenorinertgas,Humidity<25%RH,Temperature17°C–25°C,<6month1)DesignedforstorageconditionsaccordingtoInfineonTR14(ApplicationNote"StorageofProductsSuppliedbyInfineonTechnologies)DesignedforclimateconditionunderoperationaccordingtoIEC60721-3-3,class3K3IDC05S60CEEditedbyINFINEONTechnologies,IFAGIPCTDVLS,L4724E,Edition1.
2,05.
09.
2012MaximumRatingsParameterSymbolConditionValueUnitRepetitivepeakreversevoltageVRRMTvj=25C600VDCblockingvoltageVDC600Continuousforwardcurrent,limitedbyTvjmaxIFTvj<150°C5ASurgenonrepetitiveforwardcurrent,sinehalfwaveIF,SMTC=25C,tP=10ms42TC=150C,tP=10msRepetitivepeakforwardcurrent,limitedbythermalresistanceRthIF,RMTC=100C,Tvj=150C,D=0.
121Non-repetitivepeakforwardcurrentIF,maxTC=25C,tP=10s180i2tvaluedti2TC=25C,tP=10ms9A2sTC=150C,tP=10msOperatingjunctionandstoragetemperaturerangeTvj,Tstg-55.
.
.
+175CStaticCharacteristics(testedonwafer),Tvj=25°CParameterSymbolConditionsValueUnitmin.
Typ.
max.
ReversecurrentIRVR=600V0.
670ADiodeforwardvoltageVFIF=5A1.
51.
7VStaticCharacteristics(notsubjecttoproductiontest-verifiedbydesign/characterization)ParameterSymbolConditionsValueUnitmin.
Typ.
max.
ReversecurrentIRVR=600V,Tvj=150C2.
5700ADiodeforwardvoltageVFIF=5A,Tvj=150C1.
72.
1VIDC05S60CEEditedbyINFINEONTechnologies,IFAGIPCTDVLS,L4724E,Edition1.
2,05.
09.
2012DynamicCharacteristics(notsubjecttoproductiontest-verifiedbydesign/characterization)ParameterSymbolConditionsValueUnitmin.
Typ.
max.
Totalcapacitivecharge3)QCIF<=IF,maxdi/dt=200A/sVR=400VTvj=150°C12nCSwitchingtime2)tcTvj=150°C<10nsTotalcapacitanceCf=1MHzVR=1V240pFVR=300V30VR=600V301)J-STD20andJESD222)tcisthetimeconstantforthecapacitivedisplacementcurrentwaveform(independentfromTvj=150°C,ILOADanddi/dt),differentfromtrr,whichisdependentonTvj=150°C,ILOAD,di/dt.
Noreverserecoverytimeconstanttrrduetoabsenceofminoritycarrierinject.
3)Onlycapacitivechargeoccurring,guaranteedbydesign(independentfromTvj,ILOADanddi/dt).
FurtherElectricalCharacteristicsSwitchingcharacteristicsandthermalpropertiesaredependingstronglyonmoduledesignandmountingtechnologyandcanthereforenotbespecifiedforabaredie.
ThischipdatasheetreferstothedevicedatasheetIDT05S60CRev.
2.
1IDC05S60CEEditedbyINFINEONTechnologies,IFAGIPCTDVLS,L4724E,Edition1.
2,05.
09.
2012ChipDrawingA:AnodepadIDC05S60CEEditedbyINFINEONTechnologies,IFAGIPCTDVLS,L4724E,Edition1.
2,05.
09.
2012DescriptionAQL0,65forvisualinspectionaccordingtofailurecatalogueElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883RevisionHistoryVersionSubjects(majorchangessincelastrevision)DatePublishedbyInfineonTechnologiesAG81726Munich,Germany2012InfineonTechnologiesAGAllRightsReserved.
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Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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com).
WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.
Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.
Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.
Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
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