Recommendedidc前线

IDC40D120T6MEditedbyINFINEONTechnologies,AIMPMDDCIDT,L4672B,Edition0.
9,26.
06.
07DiodeEMCON4MediumPowerChipThischipisusedfor:low/mediumpowermodulesFEATURES:1200VEMCON4technologysoft,fastswitchinglowreverserecoverychargesmalltemperaturecoefficientApplications:low/mediumpowerdrivesACChipTypeVRIFDieSizePackageIDC40D120T6M1200V75A6.
30x6.
30mm2sawnonfoilMECHANICALPARAMETER:Rastersize6.
30x6.
30Areatotal/active39.
69/29.
98Anodepadsize5.
346x5.
346mm2Thickness110mWafersize150mmFlatposition180degMax.
possiblechipsperwafer367pcsPassivationfrontsidePhotoimidePadmetall3200nmAlSiCuBacksidemetallNiAg–systemsuitableforepoxyandsoftsolderdiebondingDiebondelectricallyconductiveglueorsolderWirebondAl,≤500mRejectinkdotsize0.
65mm;max1.
2mmRecommendedstorageenvironmentstoreinoriginalcontainer,indrynitrogen,<6monthatanambienttemperatureof23°CIDC40D120T6MEditedbyINFINEONTechnologies,AIMPMDDCIDT,L4672B,Edition0.
9,26.
06.
07MaximumRatingsParameterSymbolConditionValueUnitRepetitivepeakreversevoltageVRRM1200VContinuousforwardcurrentlimitedbyTjmaxIF1)MaximumrepetitiveforwardcurrentlimitedbyTjmaxIFRM150AMaximumjunctionandstoragetemperatureTvj,max,Tstg-40.
.
.
+175°CReversebiassafeoperatingarea2)(RBSOA)IF,max=150A,VR,max=1200V,Tvj,op≤150°C,Pmax=tbdkW1)dependingonthermalpropertiesofassembly2)notsubjecttoproductiontest-verifiedbydesign/characterisationStaticElectricalCharacteristics(testedonwafer),Tj=25°CValueParameterSymbolConditionsmin.
Typ.
max.
UnitReverseleakagecurrentIRVR=1200VTj=25°C14ACathode-AnodebreakdownVoltageVBrIR=0.
25mATj=25°C1200VForwardvoltagedropVFIF=75ATj=25°C1.
351.
72.
05VDynamicElectricalCharacteristicsinductiveload(notsubjecttoproductiontest-verifiedbydesign/characterization)Value2)ParameterSymbolConditionsmin.
Typ.
max.
UnitPeakreverserecoverycurrentIRMIF=Adi/dt=A/sVR=VVGE=-15VTj=25°CTj=125°CTj=150°CtbdAReverserecoverychargeQrIF=Adi/dt=A/sVR=VVGE=-15VTj=25°CTj=125°CTj=150°CtbdCReverserecoveryenergyErecIF=Adi/dt=A/sVR=VVGE=-15VTj=25°CTj=125°CTj=150°CtbdmJ2)valuesalsoinfluencedbyparasiticL-andC-inmeasurementandpackage.
IDC40D120T6MEditedbyINFINEONTechnologies,AIMPMDDCIDT,L4672B,Edition0.
9,26.
06.
07CHIPDRAWING:IDC40D120T6MEditedbyINFINEONTechnologies,AIMPMDDCIDT,L4672B,Edition0.
9,26.
06.
07FURTHERELECTRICALCHARACTERISTICS:ThischipdatasheetreferstothedevicedatasheettbdDescription:AQL0,65forvisualinspectionaccordingtofailurecatalogElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883Test-NormenVillach/PrüffeldPublishedbyInfineonTechnologiesAG81726Munich,GermanyInfineonTechnologiesAG2007AllRightsReservedAttentionplease!
Theinformationhereinisgiventodescribecertaincomponentsandshallnotbeconsideredaswarrantedcharacteristics.
Termsofdeliveryandrightstotechnicalchangereserved.
Weherebydisclaimanyandallwarranties,includingbutnotlimitedtowarrantiesofnon-infringement,regardingcircuits,descriptionsandchartsstatedherein.
InfineonTechnologiesisanapprovedCECCmanufacturer.
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ForinformationonthetypesinquestionpleasecontactyournearestInfineonTechnologiesOffice.
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Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbody,ortosupportand/ormaintainandsustainand/orprotecthumanlife.
Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.