hFE飞鱼星1260
飞鱼星1260 时间:2021-05-19 阅读:()
SOT-891.
BASE2.
COLLECTOR3.
EMITTERSOT-89Plastic-EncapsulateTransistorsTRANSISTOR(PNP)FEATURESzPowerTransistorzHighVoltageandCurrentzLowCollector-emittersaturationvoltagezMAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)ParameterSymbolTestconditionsMinTypMaxUnitCollector-basebreakdownvoltageV(BR)CBOIC=-50A,IE=0-80VCollector-emitterbreakdownvoltageV(BR)CEOIC=-1mA,IB=0-80VEmitter-basebreakdownvoltageV(BR)EBOIE=-50A,IC=0-5VCollectorcut-offcurrentICBOVCB=-60V,IE=0-1AEmittercut-offcurrentIEBOVEB=-4V,IC=0-1ADCcurrentgainhFEVCE=-3V,IC=-0.
1A82390Collector-emittersaturationvoltageVCE(sat)IC=-500mA,IB=-50mA-0.
4VCollectoroutputcapacitanceCobVCB=-10V,IE=0,f=1MHz25pFTransitionfrequencyfTVCE=-5V,IC=-50mA,f=30MHz100MHzCLASSIFICATIONOFhFERANKPQRRANGE82–180120–270180–390MARKINGZLSymbolParameterValueUnitVCBOCollector-BaseVoltage-80VVCEOCollector-EmitterVoltage-80VVEBOEmitter-BaseVoltage-5VICCollectorCurrent-1APCCollectorPowerDissipation500mWRθJAThermalResistanceFromJunctionToAmbient250℃/WTjJunctionTemperature150℃TstgStorageTemperature-55~+150℃2012-0WILLASELECTRONICCORP.
2SB1260zOutlineDrawingDimensionsininchesand(millimeters)SOT-89Rev.
C.
047(1.
2).
031(0.
8).
102(2.
60).
091(2.
30).
181(4.
60).
173(4.
39).
061REF(1.
55)REF.
023(0.
58).
016(0.
40).
060TYP(1.
50)TYP.
118TYP(3.
0)TYP.
197(0.
52).
013(0.
32).
017(0.
44).
014(0.
35).
063(1.
60).
055(1.
40).
154(3.
91).
167(4.
25)2012-0WILLASELECTRONICCORP.
SOT-89Plastic-EncapsulateTransistors2SB1260OrderingInformation:DevicePNPacking2SB1260x(3)–SOT89(1)G(2)‐WSTape&Reel:1Kpcs/ReelNote:(1)CASE:SOT‐89(2)RoHSproductforpackingcodesuffix"G";Halogenfreeproductforpackingcodesuffix"H"3)CLASSIFICATIONOFhFERANK***Disclaimer***WILLASreservestherighttomakechangeswithoutnoticetoanyproductspecificationherein,tomakecorrections,modifications,enhancementsorotherchanges.
WILLASoranyoneonitsbehalfassumesnoresponsibilityorliabilityforanyerrorsorinaccuracies.
Datasheetspecificationsanditsinformationcontainedareintendedtoprovideaproductdescriptiononly.
"Typical"parameterswhichmaybeincludedonWILLASdatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
WILLASdoesnotassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit.
WILLASproductsarenotdesigned,intendedorauthorizedforuseinmedical,life‐savingimplantorotherapplicationsintendedforlife‐sustainingorotherrelatedapplicationswhereafailureormalfunctionofcomponentorcircuitrymaydirectlyorindirectlycauseinjuryorthreatenalifewithoutexpressedwrittenapprovalofWILLAS.
CustomersusingorsellingWILLAScomponentsforuseinsuchapplicationsdosoattheirownriskandshallagreetofullyindemnifyWILLASIncanditssubsidiariesharmlessagainstallclaims,damagesandexpenditures.
2012-0WILLASELECTRONICCORP.
SOT-89Plastic-EncapsulateTransistors2SB1260
BASE2.
COLLECTOR3.
EMITTERSOT-89Plastic-EncapsulateTransistorsTRANSISTOR(PNP)FEATURESzPowerTransistorzHighVoltageandCurrentzLowCollector-emittersaturationvoltagezMAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)ParameterSymbolTestconditionsMinTypMaxUnitCollector-basebreakdownvoltageV(BR)CBOIC=-50A,IE=0-80VCollector-emitterbreakdownvoltageV(BR)CEOIC=-1mA,IB=0-80VEmitter-basebreakdownvoltageV(BR)EBOIE=-50A,IC=0-5VCollectorcut-offcurrentICBOVCB=-60V,IE=0-1AEmittercut-offcurrentIEBOVEB=-4V,IC=0-1ADCcurrentgainhFEVCE=-3V,IC=-0.
1A82390Collector-emittersaturationvoltageVCE(sat)IC=-500mA,IB=-50mA-0.
4VCollectoroutputcapacitanceCobVCB=-10V,IE=0,f=1MHz25pFTransitionfrequencyfTVCE=-5V,IC=-50mA,f=30MHz100MHzCLASSIFICATIONOFhFERANKPQRRANGE82–180120–270180–390MARKINGZLSymbolParameterValueUnitVCBOCollector-BaseVoltage-80VVCEOCollector-EmitterVoltage-80VVEBOEmitter-BaseVoltage-5VICCollectorCurrent-1APCCollectorPowerDissipation500mWRθJAThermalResistanceFromJunctionToAmbient250℃/WTjJunctionTemperature150℃TstgStorageTemperature-55~+150℃2012-0WILLASELECTRONICCORP.
2SB1260zOutlineDrawingDimensionsininchesand(millimeters)SOT-89Rev.
C.
047(1.
2).
031(0.
8).
102(2.
60).
091(2.
30).
181(4.
60).
173(4.
39).
061REF(1.
55)REF.
023(0.
58).
016(0.
40).
060TYP(1.
50)TYP.
118TYP(3.
0)TYP.
197(0.
52).
013(0.
32).
017(0.
44).
014(0.
35).
063(1.
60).
055(1.
40).
154(3.
91).
167(4.
25)2012-0WILLASELECTRONICCORP.
SOT-89Plastic-EncapsulateTransistors2SB1260OrderingInformation:DevicePNPacking2SB1260x(3)–SOT89(1)G(2)‐WSTape&Reel:1Kpcs/ReelNote:(1)CASE:SOT‐89(2)RoHSproductforpackingcodesuffix"G";Halogenfreeproductforpackingcodesuffix"H"3)CLASSIFICATIONOFhFERANK***Disclaimer***WILLASreservestherighttomakechangeswithoutnoticetoanyproductspecificationherein,tomakecorrections,modifications,enhancementsorotherchanges.
WILLASoranyoneonitsbehalfassumesnoresponsibilityorliabilityforanyerrorsorinaccuracies.
Datasheetspecificationsanditsinformationcontainedareintendedtoprovideaproductdescriptiononly.
"Typical"parameterswhichmaybeincludedonWILLASdatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
WILLASdoesnotassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit.
WILLASproductsarenotdesigned,intendedorauthorizedforuseinmedical,life‐savingimplantorotherapplicationsintendedforlife‐sustainingorotherrelatedapplicationswhereafailureormalfunctionofcomponentorcircuitrymaydirectlyorindirectlycauseinjuryorthreatenalifewithoutexpressedwrittenapprovalofWILLAS.
CustomersusingorsellingWILLAScomponentsforuseinsuchapplicationsdosoattheirownriskandshallagreetofullyindemnifyWILLASIncanditssubsidiariesharmlessagainstallclaims,damagesandexpenditures.
2012-0WILLASELECTRONICCORP.
SOT-89Plastic-EncapsulateTransistors2SB1260
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