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DRV8701ZHCSDO0A–MARCH2015–REVISEDMAY2015DRV8701有有刷刷直直流流电电机机全全桥桥栅栅极极驱驱动动器器1特特性性2应应用用1单路H桥栅极驱动器工业有刷直流电机机器人–驱动4个外部N通道金属氧化物半导体场效应晶体管(MOSFET)家庭自动化–支持100%脉宽调制(PWM)占空比工业泵和阀5.
9V至45V工作电源电压范围电动工具两个控制接口选项手持式真空吸尘器–PH/EN(DRV8701E)3说说明明–PWM(DRV8701P)DRV8701是一款采用4个外部N通道MOSFET的单可调节栅极驱动(5级)路H桥栅极驱动器,主要用于驱动12V至24V双向–6mA至150mA拉电流有刷直流电机.
–12.
5mA至300mA灌点流支持1.
8V、3.
3V和5V逻辑输入该器件可通过PH/EN(DRV8701E)或PWM分流放大器(20V/V)(DRV8701P)接口轻松连接控制器电路.
内置的感测集成PWM电流调节功能放大器能够实现可调节的电流控制.
这款栅极驱动器–限制电机浪涌电流内置有相应的电路,以便能够采用固定关断时间的低功耗睡眠模式(9μA)PWM电流斩波来调节绕组电流.
两个低压降(LDO)稳压器,用于为外部元件供电DRV8701采用9.
5VVGS栅极驱动电压来驱动高侧和–AVDD:4.
8V,最高支持30mA输出负载低侧FET.
所有外部FET的栅极驱动电流均可通过–DVDD:3.
3V,最高支持30mA输出负载IDRIVE引脚上的单个外部电阻进行配置.
小型封装尺寸低功耗睡眠模式可将内部电路关断,从而实现极低的静–24引脚超薄型四方扁平无引线(VQFN)(PowerPAD)态电流消耗.
这种睡眠模式可通过将nSLEEP引脚置–4.
0mm*4.
0mm*0.
9mm为低电平来设定.
保护特性:该器件内置以下保护功能:欠压锁定、电荷泵故障、过–VM欠压闭锁(UVLO)流关断、短路保护、前置驱动器故障以及过热保护.
–电荷泵电压(CPUV)故障情况通过nFAULT引脚指示.
–过流保护(OCP)器器件件信信息息(1)–前置驱动器故障(PDF)器器件件型型号号封封装装封封装装尺尺寸寸((标标称称值值))–热关断(TSD)4.
00mm*4.
00mm*–故障状态输出(nFAULT)DRV8701VQFN(24)0.
90mm(1)要了解所有可用封装,请见数据表末尾的可订购产品附录.
栅栅极极驱驱动动电电流流空白简简化化的的系系统统框框图图1AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,intellectualpropertymattersandotherimportantdisclaimers.
PRODUCTIONDATA.
EnglishDataSheet:SLVSCX5DRV8701ZHCSDO0A–MARCH2015–REVISEDMAY2015www.
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com.
cn目目录录7.
4DeviceFunctionalModes.
261特特性性.
18ApplicationandImplementation282应应用用.
18.
1ApplicationInformation.
283说说明明.
18.
2TypicalApplications284修修订订历历史史记记录录29PowerSupplyRecommendations.
325PinConfigurationandFunctions.
39.
1BulkCapacitanceSizing326Specifications.
510Layout.
336.
1AbsoluteMaximumRatings510.
1LayoutGuidelines336.
2ESDRatings.
510.
2LayoutExample336.
3RecommendedOperatingConditions.
511器器件件和和文文档档支支持持346.
4ThermalInformation.
611.
1文档支持.
346.
5ElectricalCharacteristics.
711.
2社区资源.
346.
6TypicalCharacteristics.
911.
3商标.
347DetailedDescription1211.
4静电放电警告.
347.
1Overview1211.
5术语表347.
2FunctionalBlockDiagram1312机机械械、、封封装装和和可可订订购购信信息息.
347.
3FeatureDescription.
144修修订订历历史史记记录录ChangesfromOriginal(March2015)toRevisionAPage已将器件状态更新为量产数据12Copyright2015,TexasInstrumentsIncorporatedDRV8701www.
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cnZHCSDO0A–MARCH2015–REVISEDMAY20155PinConfigurationandFunctionsRGEPackageRGEPackage24-PinVQFN24-PinVQFNDRV8701ETopViewDRV8701PTopViewDRV8701E(PH/EN)PINTYPEDESCRIPTIONNAMENO.
EN14InputBridgeenableinputLogiclowplacesthebridgeinbrakemode;seeTable1PH15InputBridgephaseinputControlsthedirectionoftheH-bridge;seeTable1DRV8701P(PWM)PINTYPEDESCRIPTIONNAMENO.
IN115InputBridgePWMinputLogiccontrolsthestateofH-bridge;seeTable2IN214InputCommonPinsPINTYPEDESCRIPTIONNAMENO.
Connecttomotorsupplyvoltage;bypasstoGNDwitha0.
1-FVM1PowerPowersupplyceramicplusa10-FminimumcapacitorratedforVM;additionalcapacitancemayberequiredbasedondrivecurrent5GND16PowerDevicegroundMustbeconnectedtogroundPPADVCP2PowerChargepumpoutputConnecta16-V,1-FceramiccapacitortoVMCPH3Connecta0.
1-FX7RcapacitorratedforVMbetweenCPHandPowerChargepumpswitchingnodesCPLCPL43.
3-Vlogicsupplyregulator;bypasstoGNDwitha6.
3-V,1-FDVDD8PowerLogicregulatorceramiccapacitor4.
8-Vanalogsupplyregulator;bypasstoGNDwitha6.
3-V,1-FAVDD7PowerAnalogregulatorceramiccapacitorPulllogiclowtoputdeviceintoalow-powersleepmodewithFETsnSLEEP13InputDevicesleepmodeHigh-Z;internalpulldownResistorvalueorvoltageforcedonthispinsetsthegatedriveIDRIVE12InputGatedrivecurrentsettingpincurrent;seeapplicationssectionformoredetailsCopyright2015,TexasInstrumentsIncorporated3DRV8701ZHCSDO0A–MARCH2015–REVISEDMAY2015www.
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cnCommonPins(continued)PINTYPEDESCRIPTIONNAMENO.
Controlsthecurrentregulation;applyavoltagebetween0.
3VandVREF6InputAnalogreferenceinputAVDDOpenPulledlogiclowwithfaultcondition;open-drainoutputrequiresannFAULT9FaultindicationpinDrainexternalpullupOpenPulledlogiclowwhenthedrivecurrenthitsthecurrentchoppingSNSOUT10SensecomparatoroutputDrainthreshold;open-drainoutputrequiresanexternalpullupVoltageonthispinisequaltotheSPvoltagetimesAVplusanSO11OutputShuntamplifieroutputoffset;placenomorethan1nFofcapacitanceonthispinSN20InputShuntamplifiernegativeinputConnecttoSPthroughcurrentsenseresistorandtoGNDConnecttolow-sideFETsourceandtoSNthroughcurrentsenseSP21InputShuntamplifierpositiveinputresistorGH117OutputHigh-sidegateConnecttohigh-sideFETgateGH224GL119OutputLow-sidegateConnecttolow-sideFETgateGL222SH118InputPhasenodeConnecttohigh-sideFETsourceandlow-sideFETdrainSH223ExternalPassiveComponentsCOMPONENTPIN1PIN2RECOMMENDEDCVM1VMGND0.
1-FceramiccapacitorratedforVMCVM2VMGND≥10-FcapacitorratedforVMCVCPVCPVM16-V,1-FceramiccapacitorCSWCPHCPL0.
1-FX7RcapacitorratedforVMCDVDDDVDDGND6.
3-V,1-FceramiccapacitorCAVDDAVDDGND6.
3-V,1-FceramiccapacitorRIDRIVEIDRIVEGNDSeeTypicalApplicationsforresistorsizingRnFAULTVCC(1)nFAULT≥10-kpullupRSNSOUTVCC(1)SNSOUT≥10-kpullupRSENSESPSN/GNDOptionallow-sidesenseresistor(1)VCCisnotapinontheDRV8701,butaVCCsupplyvoltagepullupisrequiredforopen-drainoutputsnFAULTandSNSOUT.
Thesystemcontrollersupplycanbeusedforthispullupvoltage,orthesepinscanbepulleduptoeitherAVDDorDVDD.
ExternalFETsComponentGateDrainSourceRecommendedQHS1GH1VMSH1QLS1GL1SH1SPorGNDSupportsupto200-nCFETsat40-kHzPWM;seeDetailedDesignProcedureformoredetailsQHS2GH2VMSH2QLS2GL2SH2SPorGND4Copyright2015,TexasInstrumentsIncorporatedDRV8701www.
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cnZHCSDO0A–MARCH2015–REVISEDMAY20156Specifications6.
1AbsoluteMaximumRatingsoveroperatingfree-airtemperaturerangereferencedwithrespecttoGND(unlessotherwisenoted)(1)MINMAXUNITPowersupplyvoltage(VM)–0.
347VPowersupplyvoltageramprate(VM)02V/sChargepumpvoltage(VCP,CPH)–0.
3VM+12VChargepumpnegativeswitchingpin(CPL)–0.
3VMVInternallogicregulatorvoltage(DVDD)–0.
33.
8VInternalanalogregulatorvoltage(AVDD)–0.
35.
75VControlpinvoltage(PH,EN,IN1,IN2,nSLEEP,nFAULT,VREF,IDRIVE,SNSOUT)–0.
35.
75VHigh-sidegatepinvoltage(GH1,GH2)–0.
3VM+12VContinuousphasenodepinvoltage(SH1,SH2)–1.
2VM+1.
2VPulsed10sphasenodepinvoltage(SH1,SH2)–2.
0VM+2VLow-sidegatepinvoltage(GL1,GL2)–0.
312VContinuousshuntamplifierinputpinvoltage(SP,SN)–0.
51VPulsed10-sshuntamplifierinputpinvoltage(SP,SN)–11VShuntamplifieroutputpinvoltage(SO)–0.
35.
75VOpen-drainoutputcurrent(nFAULT,SNSOUT)010mAGatepinsourcecurrent(GH1,GL1,GH2,GL2)0250mAGatepinsinkcurrent(GH1,GL1,GH2,GL2)0500mAShuntamplifieroutputpincurrent(SO)05mAOperatingjunctiontemperature,TJ–40150°CStoragetemperature,Tstg–65150°C(1)StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.
Thesearestressratingsonly,whichdonotimplyfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommendedOperatingConditions.
Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
6.
2ESDRatingsVALUEUNITHumanbodymodel(HBM)ESDstressvoltage(1)±2000V(ESD)ElectrostaticdischargeVChargeddevicemodel(CDM)ESDstressvoltage(2)±500(1)JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess.
(2)JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess.
6.
3RecommendedOperatingConditionsoveroperatingfree-airtemperaturerange(unlessotherwisenoted)MINMAXUNITVMPowersupplyvoltagerange5.
945VVCCLogiclevelinputvoltage05.
5VVREFReferenceRMSvoltagerange(VREF)0.
3(1)AVDDVPWMAppliedPWMsignal(PH/ENorIN1/IN2)100kHzIAVDDAVDDexternalloadcurrent30(2)mAIDVDDDVDDexternalloadcurrent30(2)mAISOShuntamplifieroutputcurrentloading(SO)5mATAOperatingambienttemperature–40125°C(1)OperationalatVREF=0to0.
3V,butaccuracyisdegraded(2)PowerdissipationandthermallimitsmustbeobservedCopyright2015,TexasInstrumentsIncorporated5DRV8701ZHCSDO0A–MARCH2015–REVISEDMAY2015www.
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cn6.
4ThermalInformationDRV8701THERMALMETRIC(1)RGE(VQFN)UNIT24PINSRθJAJunction-to-ambientthermalresistance34.
8°C/WRθJC(top)Junction-to-case(top)thermalresistance37.
1°C/WRθJBJunction-to-boardthermalresistance12.
2°C/WψJTJunction-to-topcharacterizationparameter0.
6°C/WψJBJunction-to-boardcharacterizationparameter12.
2°C/WRθJC(bot)Junction-to-case(bottom)thermalresistance3.
7°C/W(1)Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplicationreport,SPRA953.
6Copyright2015,TexasInstrumentsIncorporatedDRV8701www.
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cnZHCSDO0A–MARCH2015–REVISEDMAY20156.
5ElectricalCharacteristicsoveroperatingfree-airtemperaturerange(unlessotherwisenoted)PARAMETERTESTCONDITIONSMINTYPMAXUNITPOWERSUPPLIES(VM,AVDD,DVDD)VMVMoperatingvoltage5.
945VIVMVMoperatingsupplycurrentVM=24V;nSLEEPhigh69.
5mATA=25°C915nSLEEP=0IVMQVMsleepmodesupplycurrentμAVM=24VTA=125°C(1)1425tSLEEPSleeptimenSLEEPlowtosleepmode100μstWAKEWake-uptimenSLEEPhightooutputchange1mstONTurn-ontimeVM>UVLOtooutputtransition1msDVDDInternallogicregulatorvoltageExternalload0to30mA3.
03.
33.
5VAVDDInternallogicregulatorvoltageExternalload0to30mA4.
44.
85.
2VCHARGEPUMP(VCP,CPH,CPL)VM=12V;IVCP=0to12mA20.
521.
522.
5VCPVCPoperatingvoltageVM=8V;IVCP=0to10mA13.
514.
415VVM=5.
9V;IVCP=0to8mA9.
49.
910.
4VM>12V12IVCPChargepumpcurrentcapacity8VUVLO200400700kHzCONTROLINPUTS(PH,EN,IN1,IN2,nSLEEP)VILInputlogiclowvoltage0.
8VVIHInputlogichighvoltage1.
5VVHYSInputlogichysteresis100mVIILInputlogiclowcurrentVIN=0V–55μAIIHInputlogichighcurrentVIN=5V78μARPDPulldownresistance64115173ktPDPropagationdelayPH/EN,IN1/IN2toGHx/GLx500nsCONTROLOUTPUTS(nFAULT,SNSOUT)VOLOutputlogiclowvoltageIO=2mA0.
1VIOZOutputhighimpedanceleakageVIN=5V–22μAFETGATEDRIVERS(GH1,GH2,SH1,SH2,GL1,GL2)VM>12V;VGHSwithrespecttoSHx8.
59.
510.
5High-sideVGSgatedrive(gate-to-VGHSVM=8V;VGHSwithrespecttoSHx5.
56.
47Vsource)VM=5.
9V;VGHSwithrespecttoSHx3.
54.
04.
5VM>12V8.
59.
310.
5Low-sideVGSgatedrive(gate-to-VGLSVsource)VM=5.
9V3.
94.
34.
9ObservedtDEADdependsonIDRIVEtDEADOutputdeadtime380nssettingtDRIVEGatedrivetime2.
5μsRIDRIVE500k±5%toGND100RIDRIVE=68k±5%toAVDD150(1)SpecifiedbydesignandcharacterizationdataCopyright2015,TexasInstrumentsIncorporated7DRV8701ZHCSDO0A–MARCH2015–REVISEDMAY2015www.
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cnElectricalCharacteristics(continued)overoperatingfree-airtemperaturerange(unlessotherwisenoted)PARAMETERTESTCONDITIONSMINTYPMAXUNITRIDRIVE500±5%ktoGND300RIDRIVE=68k±5%toAVDD50SourcecurrentaftertDRIVE6IHOLDFETholdingcurrentmASinkcurrentaftertDRIVE25GHx490ISTRONGFEThold-offstrongpulldownmAGLx690PulldownGHxtoSHx200ROFFFETgatehold-offresistorkPulldownGLxtoGND150CURRENTSHUNTAMPLIFIERANDPWMCURRENTCONTROL(SP,SN,SO,VREF)VVREFVREFinputvoltageForcurrentinternalchopping0.
3(2)AVDDV5012V.
AtlowerVMvoltages,theVGSisreduced.
Thehigh-sidegatedrivevoltageisgeneratedusingadoubler-architecturechargepumpthatregulatestoVM+9.
5V.
ThisdevicegreatlyreducesthecomponentcountofdiscretemotordriversystemsbyintegratingthenecessaryFETdrivecircuitryintoasingledevice.
Inaddition,theDRV8701addsprotectionfeaturesabovetraditionaldiscreteimplementations:UVLO,OCP,pre-driverfaults,andthermalshutdown.
Astart-up(inrush)orrunningcurrentlimitationisbuiltinusingafixedtime-offcurrentchoppingscheme.
ThechoppingcurrentlevelissetbychoosingthesenseresistorvalueandbysettingavoltageontheVREFpin.
Ashuntamplifieroutputisprovidedforaccuratecurrentmeasurementsbythesystemcontroller.
TheSOpinoutputsavoltagethatis20timesthevoltageseenacrossthesenseresistor.
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cnZHCSDO0A–MARCH2015–REVISEDMAY20157.
2FunctionalBlockDiagramCopyright2015,TexasInstrumentsIncorporated13DRV8701ZHCSDO0A–MARCH2015–REVISEDMAY2015www.
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cn7.
3FeatureDescription7.
3.
1BridgeControlTheDRV8701EiscontrolledusingaPH/ENinterface.
Thefollowinglogictable(Table1)givesthefullH-bridgestatewhendrivingasinglebrushedDCmotor.
NotethatTable1doesnottakeintoaccountthecurrentcontrolbuiltintotheDRV8701E.
PositivecurrentisdefinedinthedirectionofxOUT1→xOUT2.
Table1.
DRV8701E(PH/EN)ControlInterfacenSLEEPENPHSH1SH2AVDD/DVDDDescription0XXHigh-ZHigh-ZDisabledSleepmode;H-bridgedisabledHigh-Z10XLLEnabledBrake,low-sideslowdecay110LHEnabledReversedrive(currentSH2→SH1)111HLEnabledForwarddrive(currentSH1→SH2)TheDRV8701PiscontrolledusingaPWMinterface(IN1/IN2).
Thefollowinglogictable(Table2)givesthefullH-bridgestatewhendrivingasinglebrushedDCmotor.
NotethatTable2doesnottakeintoaccountthecurrentcontrolbuiltintotheDRV8701P.
PositivecurrentisdefinedinthedirectionofxOUT1→xOUT2.
Table2.
DRV8701P(PWM)ControlInterfacenSLEEPIN1IN2SH1SH2AVDD/DVDDDescription0XXHigh-ZHigh-ZDisabledSleepmode;H-bridgedisabledHigh-Z100High-ZHigh-ZEnabledCoast;H-bridgedisabledHigh-Z101LHEnabledReverse(currentSH2→SH1)110HLEnabledForward(currentSH1→SH2)111LLEnabledBrake;low-sideslowdecayFigure19.
H-BridgeOperationalStates14Copyright2015,TexasInstrumentsIncorporatedDRV8701www.
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cnZHCSDO0A–MARCH2015–REVISEDMAY20157.
3.
2Half-BridgeOperationTheDRV8701canbeusedtodriveonlyasinglehalf-bridgeinsteadofafullH-bridge.
Tooperateinthismode,leaveGH1andGL1disconnected.
Also,connecta1/10W,330-Ω5%resistorfromSH1toGND.
Figure20.
Half-HBridgeOperationModeFortheDRV8701E,thismodeiscontrolledbytyingthePHpinlow.
Table3givesthecontrolscheme.
EN=1enablesthehigh-sideFET,andEN=0enablesthelow-sideFET.
EN=1andPH=1isaninvalidstate.
Table3.
DRV8701E(PH/EN)ControlInterfaceforHalf-HBridgeModenSLEEPENPHSH2AVDD/DVDDDescription0XXHigh-ZDisabledSleepmode;disabledHigh-Z10XLEnabledBrake,low-sideslowdecay110HEnabledDrive(CurrentSH2→GND)111InvalidstateFortheDRV8701P,Table4givesthecontrolscheme.
IN1=1andIN2=0isaninvalidstate.
Table4.
DRV8701P(PWM)ControlInterfaceforHalf-HBridgeModenSLEEPIN1IN2SH2AVDD/DVDDDescription0XXHigh-ZDisabledSleepmode;disabledHigh-Z100High-ZEnabledCoast;disabledHigh-Z101HEnabledDrive(currentSH2→GND)110Invalidstate111LEnabledBrake;low-sideslowdecayCopyright2015,TexasInstrumentsIncorporated15DRV8701ZHCSDO0A–MARCH2015–REVISEDMAY2015www.
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cn7.
3.
3CurrentRegulationThemaximumcurrentthroughthemotorwindingisregulatedbyafixedoff-timePWMcurrentregulation,orcurrentchopping.
WhenanH-bridgeisenabledinforwardorreversedrive,currentrisesthroughthewindingataratedependentontheDCvoltageandinductanceofthewinding.
Afterthecurrenthitsthecurrentchoppingthreshold,thebridgeentersabrake(low-sideslowdecay)modeuntiltOFFhasexpired.
Notethatimmediatelyafterthecurrentisenabled,thevoltageontheSPpinisignoredforaperiodoftime(tBLANK)beforeenablingthecurrentsensecircuitry.
ThePWMchoppingcurrentissetbyacomparatorwhichcomparesthevoltageacrossacurrentsenseresistorconnectedtotheSPpin,multipliedbyafactorofAV,withareferencevoltagefromtheVREFpin.
ThefactorAVistheshuntamplifiergain,whichis20V/VintheDRV8701.
Thechoppingcurrentiscalculatedasfollows:(1)Example:Ifa50mΩsenseresistorisusedandVREF=3.
3V,thefull-scalechoppingcurrentwillbe3.
25A.
AVis20V/VandVOFFisassumedtobe50mVinthisexample.
ForDCmotors,currentregulationisgenerallyusedtolimitthestart-upandstallcurrentofthemotor.
Ifthecurrentregulationfeatureisnotneeded,itcanbedisabledbytyingVREFdirectlytoAVDDandtyingSPandSNtoGND.
Figure21.
SenseAmplifierandCurrentChoppingOperationDuringbrakemode(slowdecay),currentisrecirculatedthroughthelow-sideFETs.
Becausecurrentisnotflowingthroughthesenseresistor,SOdoesnotrepresentthemotorcurrent.
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3.
4AmplifierOutputSOTheSOpinontheDRV8701outputsananalogvoltageequaltothevoltageseenacrosstheSPandSNpinsmultipliedbyAV.
ThefactorAVistheshuntamplifiergain,whichis20V/VintheDRV8701.
SOisonlyvalidduringforwardorreversedrive.
TheH-bridgecurrentisapproximatelyequalto:(2)WhenSPandSNare0V,SOoutputstheamplifieroffsetvoltageVOFF.
NocapacitorisrequiredontheSOpin.
Figure22.
SenseAmplifierDiagramIfthevoltageacrossSPandSNexceeds1V,thentheDRV8701flagsanovercurrentcondition.
TheSOpincansourceupto5mAofcurrent.
IfthepinisshortedtoGND,orifahigher-currentloadisdrivenbythispin,theoutputactsasaconstant-currentsource.
TheoutputvoltageisnotrepresentativeoftheH-bridgecurrentinthisstate.
ThisshuntamplifierfeaturecanbedisabledbytyingtheSPandSNpinstoGND.
Whentheamplifierisdisabled,currentregulationisalsodisabled.
Figure23.
SenseAmplifierOutput7.
3.
4.
1SNSOUTTheSNSOUTpinoftheDRV8701indicateswhenthedeviceisincurrentchoppingmode.
WhenthedriverisinaslowdecaymodecausedbyinternalPWMcurrentchopping(ICHOPthresholdhit),theopen-drainSNSOUToutputispulledlow.
Ifthecurrentregulationisdisabled,thentheSNSOUTpinwillbehigh-Z.
NotethatiftheH-bridgeisputintoaslowdecaymodeusingtheinputs(PH/ENorIN1/IN2),thenSNSOUTisnotpulledlow.
Duringforwardorreversedrivemode,SNSOUTishighuntiltheDRV8701isinternallyforcedintocurrentchopping.
IfthedrivecurrentrisesaboveICHOP,thedriverentersabrakemode(low-sideslowdecay).
TheSNSOUTpinwillbepulledlowduringthiscurrentchoppingbrakemode.
Afterthedriverisre-enabled,theSNSOUTpinisreleasedhigh-Zandthedrivemodeisrestarted.
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3.
5PWMMotorGateDriversTheDRV8701containsgatedriversforasingleH-bridgewithexternalNMOSFETs.
Figure24showsablockdiagramofthegatedrivercircuitry.
Figure24.
PWMMotorGateDriversGatedriversinsidetheDRV8701directlydriveN-channelMOSFETs,whichdrivethemotorcurrent.
Thehigh-sidegatedriveissuppliedbythechargepump,whilethelow-sidegatedrivevoltageisgeneratedbyaninternalregulator.
ThepeakdrivecurrentofthegatedriversisadjustablethroughtheIDRIVEpin.
Peaksourcecurrentsmaybesetto6,12.
5,25,100,or150mA.
Thepeaksinkcurrentisapproximately2*thepeaksourcecurrent.
Adjustingthepeakcurrentchangestheoutputslewrate,whichalsodependsontheFETinputcapacitanceandgatecharge.
ThepeakdrivecurrentisselectedbysettingthevalueoftheRIDRIVEresistorontheIDRIVEpinorbyforcingavoltageontotheIDRIVEpin(seeTable6fordetails).
FastswitchingtimescancauseextravoltagenoiseonVMandGND.
Thiscanbeespeciallyduetoarelativelyslowreverse-recoverytimeofthelow-sidebodydiode,whereitconductsreverse-biasmomentarily,beingsimilartoshoot-through.
SlowswitchingtimescancauseexcessivepowerdissipationsincetheexternalFETstakealongertimetoturnonandturnoff.
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cnZHCSDO0A–MARCH2015–REVISEDMAY2015Whenchangingthestateoftheoutput,thepeakcurrent(IDRIVE)isappliedforashortdriveperiod(tDRIVE)tochargethegatecapacitance.
Afterthistime,aweakercurrentsource(IHOLD)isusedtokeepthegateatthedesiredstate.
WhenselectingthegatedrivestrengthforagivenexternalFET,theselectedcurrentmustbehighenoughtofullychargeanddischargethegateduringtDRIVE,orexcessivepowerwillbedissipatedintheFET.
Duringhigh-sideturn-on,thelow-sidegateispulledlowwithastrongpull-down(ISTRONG).
Thispreventsthelow-sideFETQGSfromchargingandkeepstheFEToff,evenwhenthereisfastswitchingattheoutputs.
Thepre-drivercircuitsincludeenforcementofadeadtimeinanalogcircuitry,whichpreventsthehigh-sideandlow-sideFETsfromconductingatthesametime.
WhenswitchingFETson,thishandshakingpreventsthehigh-orlow-sideFETfromturningonuntiltheoppositeFEThasbeenturnedoff.
Figure25.
GateDriverOutputtoControlExternalFETsQGDMillerchargeWhenaFETgateisturnedon,threedifferentcapacitancesmustbecharged.
QGS–Gate-to-sourcechargeQGD–Gate-to-draincharge(millercharge)RemainingQGTheFEToutputisslewingprimarilyduringtheQGDcharge.
Figure26.
ExampleFETGateChargingProfileCopyright2015,TexasInstrumentsIncorporated19DRV8701ZHCSDO0A–MARCH2015–REVISEDMAY2015www.
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com.
cn7.
3.
6IDRIVEPinTheriseandfalltimesoftheH-bridgeoutput(SHxpins)canbeadjustedbysettingtheIDRIVEresistorvalueorforcingavoltageontotheIDRIVEpin.
TheFETgatevoltagerampsfasterifahigherIDRIVEsettingischosen.
TheFETgaterampdirectlyaffectstheH-bridgeoutputriseandfalltime.
TyingIDRIVEtoGNDselectsthelowestdrivesettingof6-mAsourceand12.
5-mAsink.
Ifthispinisleftunconnected,thenthe100-mAsourceand200-mAsinksettingareselected.
IfIDRIVEisshortedtoAVDD,thentheVDSOCPmonitoronthehigh-sideFETsisdisabled.
Inthissetting,thegatedriverisconfiguredas25-mAsourceand50-mAsink.
Figure27.
IDRIVEPinInternalCircuitryTable5.
IDRIVEPinConfigurationSettingsSourceCurrentIDRIVEResistanceIDRIVEVoltageSinkCurrent(IDRIVE,SNK)HSOCPMonitor(IDRIVE,SRC)500ktoGND,High-Z3V±5%100mA200mAON68k±5%toAVDD4V±5%150mA300mAON500ktoGND,High-Z68k±5%toAVDDVCPUV(CPUV)ExternalFEToverloadVDS≥1.
0VorDisabledOperatingOperatingOperatingtRETRY(OCP)VSP–VSN>1.
0VGatevoltagePre-driverfault(PDF)DisabledOperatingOperatingOperatingtRETRYunchangedaftertDRIVEThermalshutdownTJ≥150°CDisabledDisabledDisabledOperatingTJ≤130°C(TSD)24Copyright2015,TexasInstrumentsIncorporatedDRV8701www.
ti.
com.
cnZHCSDO0A–MARCH2015–REVISEDMAY20157.
3.
14ReverseSupplyProtectionThefollowingcircuitmaybeimplementedtoprotectthesystemfromreversesupplyconditions.
Thiscircuitrequiresthefollowingadditionalcomponents:NMOSFETnpnBJTDiode10-kΩresistor43-kΩresistorFigure32.
ReverseSupplyProtectionExternalCircuitryCopyright2015,TexasInstrumentsIncorporated25DRV8701ZHCSDO0A–MARCH2015–REVISEDMAY2015www.
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cn7.
4DeviceFunctionalModesTheDRV8701isactiveunlessthenSLEEPpinisbroughtlow.
Insleepmode,thechargepumpisdisabled,theH-bridgeFETsareHigh-Z,andtheAVDDandDVDDregulatorsaredisabled.
NotethattSLEEPmustelapseafterafallingedgeonthenSLEEPpinbeforethedeviceisinsleepmode.
TheDRV8701isbroughtoutofsleepmodeifnSLEEPisbroughthigh.
NotethattWAKEmustelapsebeforetheoutputschangestateafterwake-up.
WhilenSLEEPisbroughtlow,allexternalH-bridgeFETsaredisabled.
Thehigh-sidegatepinsGHxarepulledtotheoutputnodeSHxbyaninternalresistor,andthelow-sidegatepinsGLxarepulledtoGND.
WhenVMisnotapplied,andduringthepower-ontime(tON),theoutputsaredisabledusingweakpulldownresistorsbetweentheGHxandSHxpinsandbetweenGLxandGND.
Table8.
FunctionalModesConditionChargePumpGHxGLxAVDDandDVDDUnpoweredVMVBAT.
IDRIVEmustbeshortedtoAVDDtodisablethehigh-sideOCP.
TheIDRIVEcurrentisfixedat25-mAsourceand50-mAsink.
ThiscasecanallowthedrivertobetterenhancetheexternalFETsforVBATVBAT(higherthanCase2).
IDRIVEmustbeshortedtoAVDDtodisablethehigh-sideOCP.
ThiscasecanalsoallowthedrivertobetterenhancetheexternalFETs,oroperatedowntoalowersupplyvoltagebelow5.
9V.
TheIDRIVEcurrentisfixedat25-mAsourceand50-mAsink.
ExcessgatedrivecurrentmaybedriventhroughtheDRV8701gateclampscausingadditionalpowerdissipationintheDRV8701.
Case4:VMVBATVM0.
6*VBAT+2.
5VVM≥5.
9VVM≤VBATVM≤0.
6*VBAT+2.
5V11.
5V≤VBATVBATN/AVM>VBAT–4VVM≥5.
9VVM≤45V14V≤VBAT≤45VVM≤VBATVM≤VBAT–4VFigure33.
VMOperatingRangeBasedonMotorSupplyVoltageWhennSLEEPislow,VMmaybereduceddownto0Vwithupto45VpresentatVBAT.
However,nSLEEPshouldnotbebroughthighuntilVMissuppliedwithavoltagealigningwithoneofthecasesoutlinedabove.
Copyright2015,TexasInstrumentsIncorporated27DRV8701ZHCSDO0A–MARCH2015–REVISEDMAY2015www.
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com.
cn8ApplicationandImplementationNOTEInformationinthefollowingapplicationssectionsisnotpartoftheTIcomponentspecification,andTIdoesnotwarrantitsaccuracyorcompleteness.
TI'scustomersareresponsiblefordeterminingsuitabilityofcomponentsfortheirpurposes.
Customersshouldvalidateandtesttheirdesignimplementationtoconfirmsystemfunctionality.
8.
1ApplicationInformationTheDRV8701isusedinbrushed-DC,solenoid,orrelaycontrol.
8.
2TypicalApplications8.
2.
1Brushed-DCMotorControlThefollowingdesignprocedurecanbeusedtoconfiguretheDRV8701.
Figure34.
TypicalApplicationSchematic8.
2.
1.
1DesignRequirementsTable10givesdesigninputparametersforsystemdesign.
Table10.
DesignParametersDesignParameterReferenceExampleValueNominalsupplyvoltageVM18VSupplyvoltagerangeVMMIN,VMMAX12to24VFETtotalgatecharge(1)QG14nC(typically)FETgate-to-draincharge(1)QGD2.
3nC(typically)TargetFETgaterisetimeRT100to300nsMotorcurrentchoppinglevelICHOP3A(1)FETpartnumberisCSD88537ND.
28Copyright2015,TexasInstrumentsIncorporatedDRV8701www.
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com.
cnZHCSDO0A–MARCH2015–REVISEDMAY20158.
2.
1.
2DetailedDesignProcedure8.
2.
1.
2.
1ExternalFETSelectionTheDRV8701FETsupportisbasedonthechargepumpcapacityandoutputPWMfrequency.
ForaquickcalculationofFETdrivingcapacity,usethefollowingequationswhendriveandbrake(slowdecay)aretheprimarymodesofoperation:wherefPWMisthemaximumdesiredPWMfrequencytobeappliedtotheDRV8701inputsorthecurrentchoppingfrequency,whicheverislarger.
IVCPisthechargepumpcapacity,whichdependsonVM.
(5)Theinternalcurrentchoppingfrequencyisatmost:(6)Example:IfasystematVM=7V(IVCP=8mA)usesamaximumPWMfrequencyof40kHz,thentheDRV8701willsupportQG<200nCFETs.
Iftheapplicationwillrequireaforcedfastdecay(oralternatingbetweendriveandreversedrive),themaximumFETdrivingcapacityisgivenby:(7)8.
2.
1.
2.
2IDRIVEConfigurationSelectIDRIVEbasedonthegatechargeoftheFETs.
ConfigurethispinsothattheFETgatesarechargedcompletelyduringtDRIVE.
IfthedesignerchoosesanIDRIVEthatistoolowforagivenFET,thentheFETmaynotturnoncompletely.
TIsuggeststoadjustthesevaluesin-systemwiththerequiredexternalFETsandmotortodeterminethebestpossiblesettingforanyapplication.
ForFETswithaknowngate-to-draincharge(QGD)anddesiredrisetime(RT),selectIDRIVEbasedon:(8)Example:Ifthegate-to-drainchargeis2.
3nC,andthedesiredrisetimeisaround100to300ns,IDRIVE1=2.
3nC/100ns=23mAIDRIVE2=2.
3nC/300ns=7.
7mASelectIDRIVEbetween7.
7and23mASelectIDRIVEas12.
5-mAsource(25-mAsink)Requiresa33-kresistorfromtheIDRIVEpintoGND8.
2.
1.
2.
3CurrentChoppingConfigurationThechoppingcurrentissetbasedonthesenseresistorvalueandtheanalogvoltageatVREF.
CalculatethecurrentusingEquation9.
TheamplifiergainAVis20V/VandVOFFistypically50mV.
Example:Ifthedesiredchoppingcurrentis3A,SetRSENSE=50m(9)VREFwouldhavetobe3.
05V.
CreatearesistordividerfromAVDD(4.
8V)tosetVREF≈3VSetR2=3.
3k;setR1=2k.
Copyright2015,TexasInstrumentsIncorporated29DRV8701ZHCSDO0A–MARCH2015–REVISEDMAY2015www.
ti.
com.
cn8.
2.
1.
3ApplicationCurvesFigure35.
SH1RiseTime(12.
5-mASource,25-mASink)Figure36.
SH1FallTime(12.
5-mASource,25-mASink)Figure37.
CurrentRegulatingat3AonMotorStartupFigure38.
CurrentProfileonMotorStartupWithRegulationFigure39.
CurrentProfileonMotorStartupWithoutRegulation30Copyright2015,TexasInstrumentsIncorporatedDRV8701www.
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com.
cnZHCSDO0A–MARCH2015–REVISEDMAY20158.
2.
2AlternateApplicationInthisexample,theDRV8701ispoweredfromasupplythatisboostedaboveVBAT.
ThisallowsthesystemtoworkatlowerVBATvoltages,butrequirestheusertodisableOCPmonitoring.
Figure40.
DRV8701onBoostedSupply8.
2.
2.
1DesignRequirementsTable11givesdesigninputparametersforsystemdesign.
Table11.
DesignParametersDesignParameterReferenceExampleValue12VnominalBatteryvoltageVBATMinimumoperation:4.
0VVM=7VwhenVBAT<7VDRV8701supplyvoltageVMVM=VBATwhenVBAT≥7VFETtotalgatechargeQG42nCFETgate-to-drainchargeQGD11nCMotorcurrentchoppinglevelICHOP3A8.
2.
3DetailedDesignProcedure8.
2.
3.
1IDRIVEConfigurationBecausetheVMsupplytotheDRV8701isdifferentfromtheexternalH-bridgesupplyVBAT,thedesignermustdisabletheovercurrentmonitortopreventfalseovercurrentdetection.
Thedesignermustplacea68-kresistorbetweentheIDRIVEpinandAVDD.
IDRIVEisfixedat25-mAsourceand50-mAsinkinthismode.
So,therisetimeis11nC/25mA=440ns.
Copyright2015,TexasInstrumentsIncorporated31DRV8701ZHCSDO0A–MARCH2015–REVISEDMAY2015www.
ti.
com.
cn8.
2.
3.
2VMBoostVoltageTodetermineaneffectivevoltagetoboostVM,firstdeterminetheminimumVBATatwhichthesystemmustoperate.
SelectVMsuchthatthegatedriverclampsdonotturnonduringnormaloperation.
(10)Example:IfVBATminimumis4.
0V,VM<7.
75VSoVM=7Visselectedtoallowforadequatemargin.
9PowerSupplyRecommendationsTheDRV8701isdesignedtooperatefromaninputvoltagesupply(VM)rangebetween5.
9and45V.
A0.
1-FceramiccapacitorratedforVMmustbeplacedasclosetotheDRV8701aspossible.
Inaddition,thedesignermustincludeabulkcapacitorwithavaluedofatleast10FonVM.
BypassingtheexternalH-bridgeFETsrequiresadditionalbulkcapacitance.
9.
1BulkCapacitanceSizingHavingappropriatelocalbulkcapacitanceisanimportantfactorinmotordrivesystemdesign.
Itisgenerallybeneficialtohavemorebulkcapacitance,whilethedisadvantagesareincreasedcostandphysicalsize.
Theamountoflocalcapacitanceneededdependsonavarietyoffactors,including:ThehighestcurrentrequiredbythemotorsystemThepowersupply'scapacitanceandabilitytosourcecurrentTheamountofparasiticinductancebetweenthepowersupplyandmotorsystemTheacceptablevoltagerippleThetypeofmotorused(brushedDC,brushlessDC,stepper)ThemotorbrakingmethodTheinductancebetweenthepowersupplyandmotordrivesystemwilllimittheratecurrentcanchangefromthepowersupply.
Ifthelocalbulkcapacitanceistoosmall,thesystemwillrespondtoexcessivecurrentdemandsordumpsfromthemotorwithachangeinvoltage.
Whenadequatebulkcapacitanceisused,themotorvoltageremainsstableandhighcurrentcanbequicklysupplied.
Thedatasheetgenerallyprovidesarecommendedvalue,butsystem-leveltestingisrequiredtodeterminetheappropriatesizedbulkcapacitor.
Figure41.
ExampleSetupofMotorDriveSystemWithExternalPowerSupplyThevoltageratingforbulkcapacitorsshouldbehigherthantheoperatingvoltage,toprovidemarginforcaseswhenthemotortransfersenergytothesupply.
32Copyright2015,TexasInstrumentsIncorporatedDRV8701www.
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cnZHCSDO0A–MARCH2015–REVISEDMAY201510Layout10.
1LayoutGuidelinesBypasstheVMpintoGNDusingalow-ESRceramicbypasscapacitorwitharecommendedvalueof0.
1FratedforVM.
PlacethiscapacitorasclosetotheVMpinaspossiblewithathicktraceorgroundplaneconnectiontothedeviceGNDpin.
BypasstheVMpintogroundusingabulkcapacitorratedforVM.
Thiscomponentmaybeanelectrolytic.
Thiscapacitancemustbeatleast10F.
Thebulkcapacitorshouldbeplacedtominimizethedistanceofthehigh-currentpaththroughtheexternalFETs.
Theconnectingmetaltracewidthsshouldbeaswideaspossible,andnumerousviasshouldbeusedwhenconnectingPCBlayers.
Thesepracticesminimizeinductanceandallowthebulkcapacitortodeliverhighcurrent.
Placealow-ESRceramiccapacitorinbetweentheCPLandCPHpins.
Thevalueforthiscomponentis0.
1FratedforVM.
Placethiscomponentasclosetothepinsaspossible.
Placealow-ESRceramiccapacitorinbetweentheVMandVCPpins.
Thevalueforthiscomponentis1Fratedfor16V.
Placethiscomponentasclosetothepinsaspossible.
BypassAVDDandDVDDtogroundwithceramiccapacitorsratedat6.
3V.
Placethesebypassingcapacitorsasclosetothepinsaspossible.
Ifdesired,aligntheexternalNMOSFETsasshowninFigure42tofacilitatelayout.
RoutetheSH2andSH1netstothemotor.
UseseparatetracestoconnecttheSPandSNpinstotheRSENSEterminals.
10.
2LayoutExampleFigure42.
LayoutRecommendation版权2015,TexasInstrumentsIncorporated33DRV8701ZHCSDO0A–MARCH2015–REVISEDMAY2015www.
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com.
cn11器器件件和和文文档档支支持持11.
1文文档档支支持持11.
1.
1相相关关文文档档《PowerPAD耐热增强型封装》(,SLMA002《PowerPAD速成》,SLMA004《电流再循环和衰减模式》,SLVA32111.
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Linkedcontentsareprovided"ASIS"bytherespectivecontributors.
TheydonotconstituteTIspecificationsanddonotnecessarilyreflectTI'sviews;seeTI'sTermsofUse.
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3商商标标PowerPAD,E2EaretrademarksofTexasInstruments.
Allothertrademarksarethepropertyoftheirrespectiveowners.
11.
4静静电电放放电电警警告告这些装置包含有限的内置ESD保护.
存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止MOS门极遭受静电损伤.
11.
5术术语语表表SLYZ022—TI术语表.
这份术语表列出并解释术语、首字母缩略词和定义.
12机机械械、、封封装装和和可可订订购购信信息息以下页中包括机械、封装和可订购信息.
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comIMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号,中建大厦32楼邮政编码:200122Copyright2015,德州仪器半导体技术(上海)有限公司PACKAGEOPTIONADDENDUMwww.
ti.
com18-May-2015Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Lead/BallFinish(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesDRV8701ERGERACTIVEVQFNRGE243000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to1258701EDRV8701ERGETACTIVEVQFNRGE24250Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to1258701EDRV8701PRGERACTIVEVQFNRGE243000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to1258701PDRV8701PRGETACTIVEVQFNRGE24250Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to1258701P(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheckhttp://www.
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com/productcontentforthelatestavailabilityinformationandadditionalproductcontentdetails.
TBD:ThePb-Free/Greenconversionplanhasnotbeendefined.
Pb-Free(RoHS):TI'sterms"Lead-Free"or"Pb-Free"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirementsforall6substances,includingtherequirementthatleadnotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses.
Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieandpackage,or2)lead-baseddieadhesiveusedbetweenthedieandleadframe.
ThecomponentisotherwiseconsideredPb-Free(RoHScompatible)asdefinedabove.
Green(RoHS&noSb/Br):TIdefines"Green"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflameretardants(BrorSbdonotexceed0.
1%byweightinhomogeneousmaterial)(3)MSL,PeakTemp.
-TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclassifications,andpeaksoldertemperature.
(4)Theremaybeadditionalmarking,whichrelatestothelogo,thelottracecodeinformation,ortheenvironmentalcategoryonthedevice.
(5)MultipleDeviceMarkingswillbeinsideparentheses.
OnlyoneDeviceMarkingcontainedinparenthesesandseparatedbya"~"willappearonadevice.
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TAPEANDREELINFORMATION*AlldimensionsarenominalDevicePackageTypePackageDrawingPinsSPQReelDiameter(mm)ReelWidthW1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W(mm)Pin1QuadrantDRV8701ERGERVQFNRGE243000330.
012.
44.
254.
251.
158.
012.
0Q2DRV8701ERGETVQFNRGE24250180.
012.
44.
254.
251.
158.
012.
0Q2DRV8701PRGERVQFNRGE243000330.
012.
44.
254.
251.
158.
012.
0Q2DRV8701PRGETVQFNRGE24250180.
012.
44.
254.
251.
158.
012.
0Q2PACKAGEMATERIALSINFORMATIONwww.
ti.
com19-May-2015PackMaterials-Page1*AlldimensionsarenominalDevicePackageTypePackageDrawingPinsSPQLength(mm)Width(mm)Height(mm)DRV8701ERGERVQFNRGE243000367.
0367.
035.
0DRV8701ERGETVQFNRGE24250210.
0185.
035.
0DRV8701PRGERVQFNRGE243000367.
0367.
035.
0DRV8701PRGETVQFNRGE24250210.
0185.
035.
0PACKAGEMATERIALSINFORMATIONwww.
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