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SemiconductorComponentsIndustries,LLC,2013October,2018Rev.
61PublicationOrderNumber:NJT4030P/DNJT4030P,NJV4030PBipolarPowerTransistors,PNP,3.
0A,40VFeaturesEpoxyMeetsUL94,V0@0.
125inNJVPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AECQ101QualifiedandPPAPCapableTheseDevicesarePbFree,HalogenFree/BFRFreeandareRoHSCompliantMAXIMUMRATINGS(TC=25°Cunlessotherwisenoted)RatingSymbolValueUnitCollectorEmitterVoltageVCEO40VdcCollectorBaseVoltageVCB40VdcEmitterBaseVoltageVEB6.
0VdcBaseCurrentContinuousIB1.
0AdcCollectorCurrentContinuousIC3.
0AdcCollectorCurrentPeakICM5.
0AdcESDHumanBodyModelHBM3BVESDMachineModelMMCVStressesexceedingthoselistedintheMaximumRatingstablemaydamagethedevice.
Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbeassumed,damagemayoccurandreliabilitymaybeaffected.
THERMALCHARACTERISTICSCharacteristicSymbolMaxUnitTotalPowerDissipationTotalPD@TA=25°C(Note1)TotalPD@TA=25°C(Note2)PD2.
00.
80WThermalResistance,JunctiontoCaseJunctiontoAmbient(Note1)JunctiontoAmbient(Note2)RqJARqJA64155°C/WMaximumLeadTemperatureforSolderingPurposes,1/8"fromcasefor5secondsTL260°COperatingandStorageJunctionTemperatureRangeTJ,Tstg55to+150°C1.
Mountedon1"sq.
(645sq.
mm)CollectorpadonFR4bdmaterial.
2.
Mountedon0.
012"sq.
(7.
6sq.
mm)CollectorpadonFR4bdmaterial.
SOT223CASE318ESTYLE1MARKINGDIAGRAMPNPTRANSISTOR3.
0AMPERES40VOLTS,2.
0WATTSwww.
onsemi.
com1AYW4030PGGA=AssemblyLocationYYearW=WorkWeek4030P=SpecificDeviceCodeG=PbFreePackageCOLLECTOR2,4BASE1EMITTER3DevicePackageShippingORDERINGINFORMATIONNJT4030PT1GSOT223(PbFree)Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D.
1000/Tape&ReelNJT4030PT3GSOT223(PbFree)4000/Tape&ReelNJV4030PT1GNJV4030PT3G1234(Note:Microdotmaybeineitherlocation)NJT4030P,NJV4030Pwww.
onsemi.
com2ELECTRICALCHARACTERISTICS(TC=25°Cunlessotherwisenoted)CharacteristicSymbolMinTypMaxUnitOFFCHARACTERISTICSCollectorEmitterSustainingVoltage(IC=10mAdc,IB=0Adc)VCEO(sus)40VdcEmitterBaseVoltage(IE=50mAdc,IC=0Adc)VEBO6.
0VdcCollectorCutoffCurrent(VCB=40Vdc)ICBO100nAdcEmitterCutoffCurrent(VBE=6.
0Vdc)IEBO100nAdcONCHARACTERISTICS(Note3)CollectorEmitterSaturationVoltage(IC=0.
5Adc,IB=5.
0mAdc)(IC=1.
0Adc,IB=10mAdc)(IC=3.
0Adc,IB=0.
3Adc)VCE(sat)0.
1500.
2000.
500VdcBaseEmitterSaturationVoltage(IC=1.
0Adc,IB=0.
1Adc)VBE(sat)1.
0VdcBaseEmitterOnVoltage(IC=1.
0Adc,VCE=2.
0Vdc)VBE(on)1.
0VdcDCCurrentGain(IC=0.
5Adc,VCE=1.
0Vdc)(IC=1.
0Adc,VCE=1.
0Vdc)(IC=3.
0Adc,VCE=1.
0Vdc)hFE220200100400DYNAMICCHARACTERISTICSOutputCapacitance(VCB=10Vdc,f=1.
0MHz)Cob40pFInputCapacitance(VEB=5.
0Vdc,f=1.
0MHz)Cib130pFCurrentGainBandwidthProduct(Note4)(IC=500mA,VCE=10V,Ftest=1.
0MHz)fT160MHzProductparametricperformanceisindicatedintheElectricalCharacteristicsforthelistedtestconditions,unlessotherwisenoted.
ProductperformancemaynotbeindicatedbytheElectricalCharacteristicsifoperatedunderdifferentconditions.
3.
PulseTest:PulseWidth≤300ms,DutyCycle≤2%.
4.
fT=|hFE|ftestFigure1.
PowerDeratingTJ,TEMPERATURE(°C)15010075502500.
51.
01.
52.
02.
5PD,POWERDISSIPATION(W)TC125TANJT4030P,NJV4030Pwww.
onsemi.
com3TYPICALCHARACTERISTICSFigure2.
DCCurrentGainFigure3.
DCCurrentGainIC,COLLECTORCURRENT(A)IC,COLLECTORCURRENT(A)1010.
10.
010.
00101002003004005006001010.
10.
010.
0010100200300500600700Figure4.
CollectorEmitterSaturationVoltageFigure5.
CollectorEmitterSaturationVoltageIC,COLLECTORCURRENT(A)IC,COLLECTORCURRENT(A)1010.
10.
010.
0010.
0010.
010.
111010.
10.
010.
0010.
010.
11Figure6.
CollectorSaturationRegionFigure7.
VBE(on)VoltageIB,BASECURRENT(A)IC,COLLECTORCURRENT(A)1.
0E031.
0E040.
010.
111010.
10.
010.
00100.
10.
20.
30.
40.
50.
61.
2hFE,DCCURRENTGAINhFE,DCCURRENTGAINVCE(sat),COLLECTOREMITTERSATURATIONVOLTAGE(V)VCE(sat),COLLECTOREMITTERSATURATIONVOLTAGE(V)VCE(sat),COLLECTOREMITTERSATURATIONVOLTAGE(V)VBE(on),EMITTERBASEVOLTAGE(V)VCE=1V150°C40°C25°CVCE=4V150°C40°C25°C400IC/IB=10150°C40°C25°CIC/IB=50150°C40°C25°C1.
0E021.
0E011.
0E+000.
70.
80.
91.
01.
1VCE=2V150°C40°C25°CIC=2A0.
1A1A0.
5ANJT4030P,NJV4030Pwww.
onsemi.
com4TYPICALCHARACTERISTICS1001010.
010.
11100.
5ms10ms100ms1msFigure8.
BaseEmitterSaturationVoltageFigure9.
BaseEmitterSaturationVoltageIC,COLLECTORCURRENT(A)1010.
10.
010.
00100.
10.
20.
30.
70.
91.
11.
3Figure10.
InputCapacitanceFigure11.
OutputCapacitanceVEB,EMITTERBASEVOLTAGE(V)VCB,COLLECTORBASEVOLTAGE(V)654321005010015020025030035035302520151050020406080100Figure12.
CurrentGainBandwidthProductFigure13.
SafeOperatingAreaIC,COLLECTORCURRENT(A)VCE,COLLECTOREMITTERVOLTAGE(V)10.
10.
010.
0010204060120140180200VBE(sat),EMITTERBASESATURATIONVOLTAGE(V)Cibo,INPUTCAPACITANCE(pF)Cobo,OUTPUTCAPACITANCE(pF)fTau,CURRENTBANDWIDTHPRODUCT(MHz)IC,COLLECTORCURRENT(A)0.
40.
50.
60.
81.
01.
2IC/IB=10150°C40°C25°CIC,COLLECTORCURRENT(A)1010.
10.
010.
00100.
10.
20.
30.
70.
91.
1VBE(sat),EMITTERBASESATURATIONVOLTAGE(V)0.
40.
50.
60.
81.
01.
2IC/IB=50150°C40°C25°CTJ=25°Cftest=1MHzTJ=25°Cftest=1MHz80100160TJ=25°Cftest=1MHzVCE=10VSOT223(TO261)CASE318E04ISSUERDATE02OCT2018SCALE1:1qqMECHANICALCASEOUTLINEPACKAGEDIMENSIONSONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
98ASB42680BDOCUMENTNUMBER:DESCRIPTION:ElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromtheDocumentRepository.
Printedversionsareuncontrolledexceptwhenstamped"CONTROLLEDCOPY"inred.
PAGE1OF2SOT223(TO261)SemiconductorComponentsIndustries,LLC,2018www.
onsemi.
comSOT223(TO261)CASE318E04ISSUERDATE02OCT2018STYLE4:PIN1.
SOURCE2.
DRAIN3.
GATE4.
DRAINSTYLE6:PIN1.
RETURN2.
INPUT3.
OUTPUT4.
INPUTSTYLE8:CANCELLEDSTYLE1:PIN1.
BASE2.
COLLECTOR3.
EMITTER4.
COLLECTORSTYLE10:PIN1.
CATHODE2.
ANODE3.
GATE4.
ANODESTYLE7:PIN1.
ANODE12.
CATHODE3.
ANODE24.
CATHODESTYLE3:PIN1.
GATE2.
DRAIN3.
SOURCE4.
DRAINSTYLE2:PIN1.
ANODE2.
CATHODE3.
NC4.
CATHODESTYLE9:PIN1.
INPUT2.
GROUND3.
LOGIC4.
GROUNDSTYLE5:PIN1.
DRAIN2.
GATE3.
SOURCE4.
GATESTYLE11:PIN1.
MT12.
MT23.
GATE4.
MT2STYLE12:PIN1.
INPUT2.
OUTPUT3.
NC4.
OUTPUTSTYLE13:PIN1.
GATE2.
COLLECTOR3.
EMITTER4.
COLLECTOR1A=AssemblyLocationY=YearW=WorkWeekXXXXX=SpecificDeviceCodeG=PbFreePackageGENERICMARKINGDIAGRAM*AYWXXXXXGG(Note:Microdotmaybeineitherlocation)*Thisinformationisgeneric.
Pleaserefertodevicedatasheetforactualpartmarking.
PbFreeindicator,"G"ormicrodot"G",mayormaynotbepresent.
SomeproductsmaynotfollowtheGenericMarking.
ONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
98ASB42680BDOCUMENTNUMBER:DESCRIPTION:ElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromtheDocumentRepository.
Printedversionsareuncontrolledexceptwhenstamped"CONTROLLEDCOPY"inred.
PAGE2OF2SOT223(TO261)SemiconductorComponentsIndustries,LLC,2018www.
onsemi.
comwww.
onsemi.
com1ONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/PatentMarking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
ONSemiconductorisanEqualOpportunity/AffirmativeActionEmployer.
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PUBLICATIONORDERINGINFORMATIONTECHNICALSUPPORTNorthAmericanTechnicalSupport:VoiceMail:18002829855TollFreeUSA/CanadaPhone:011421337902910LITERATUREFULFILLMENT:EmailRequeststo:orderlit@onsemi.
comONSemiconductorWebsite:www.
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comEurope,MiddleEastandAfricaTechnicalSupport:Phone:00421337902910Foradditionalinformation,pleasecontactyourlocalSalesRepresentative
61PublicationOrderNumber:NJT4030P/DNJT4030P,NJV4030PBipolarPowerTransistors,PNP,3.
0A,40VFeaturesEpoxyMeetsUL94,V0@0.
125inNJVPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AECQ101QualifiedandPPAPCapableTheseDevicesarePbFree,HalogenFree/BFRFreeandareRoHSCompliantMAXIMUMRATINGS(TC=25°Cunlessotherwisenoted)RatingSymbolValueUnitCollectorEmitterVoltageVCEO40VdcCollectorBaseVoltageVCB40VdcEmitterBaseVoltageVEB6.
0VdcBaseCurrentContinuousIB1.
0AdcCollectorCurrentContinuousIC3.
0AdcCollectorCurrentPeakICM5.
0AdcESDHumanBodyModelHBM3BVESDMachineModelMMCVStressesexceedingthoselistedintheMaximumRatingstablemaydamagethedevice.
Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbeassumed,damagemayoccurandreliabilitymaybeaffected.
THERMALCHARACTERISTICSCharacteristicSymbolMaxUnitTotalPowerDissipationTotalPD@TA=25°C(Note1)TotalPD@TA=25°C(Note2)PD2.
00.
80WThermalResistance,JunctiontoCaseJunctiontoAmbient(Note1)JunctiontoAmbient(Note2)RqJARqJA64155°C/WMaximumLeadTemperatureforSolderingPurposes,1/8"fromcasefor5secondsTL260°COperatingandStorageJunctionTemperatureRangeTJ,Tstg55to+150°C1.
Mountedon1"sq.
(645sq.
mm)CollectorpadonFR4bdmaterial.
2.
Mountedon0.
012"sq.
(7.
6sq.
mm)CollectorpadonFR4bdmaterial.
SOT223CASE318ESTYLE1MARKINGDIAGRAMPNPTRANSISTOR3.
0AMPERES40VOLTS,2.
0WATTSwww.
onsemi.
com1AYW4030PGGA=AssemblyLocationYYearW=WorkWeek4030P=SpecificDeviceCodeG=PbFreePackageCOLLECTOR2,4BASE1EMITTER3DevicePackageShippingORDERINGINFORMATIONNJT4030PT1GSOT223(PbFree)Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D.
1000/Tape&ReelNJT4030PT3GSOT223(PbFree)4000/Tape&ReelNJV4030PT1GNJV4030PT3G1234(Note:Microdotmaybeineitherlocation)NJT4030P,NJV4030Pwww.
onsemi.
com2ELECTRICALCHARACTERISTICS(TC=25°Cunlessotherwisenoted)CharacteristicSymbolMinTypMaxUnitOFFCHARACTERISTICSCollectorEmitterSustainingVoltage(IC=10mAdc,IB=0Adc)VCEO(sus)40VdcEmitterBaseVoltage(IE=50mAdc,IC=0Adc)VEBO6.
0VdcCollectorCutoffCurrent(VCB=40Vdc)ICBO100nAdcEmitterCutoffCurrent(VBE=6.
0Vdc)IEBO100nAdcONCHARACTERISTICS(Note3)CollectorEmitterSaturationVoltage(IC=0.
5Adc,IB=5.
0mAdc)(IC=1.
0Adc,IB=10mAdc)(IC=3.
0Adc,IB=0.
3Adc)VCE(sat)0.
1500.
2000.
500VdcBaseEmitterSaturationVoltage(IC=1.
0Adc,IB=0.
1Adc)VBE(sat)1.
0VdcBaseEmitterOnVoltage(IC=1.
0Adc,VCE=2.
0Vdc)VBE(on)1.
0VdcDCCurrentGain(IC=0.
5Adc,VCE=1.
0Vdc)(IC=1.
0Adc,VCE=1.
0Vdc)(IC=3.
0Adc,VCE=1.
0Vdc)hFE220200100400DYNAMICCHARACTERISTICSOutputCapacitance(VCB=10Vdc,f=1.
0MHz)Cob40pFInputCapacitance(VEB=5.
0Vdc,f=1.
0MHz)Cib130pFCurrentGainBandwidthProduct(Note4)(IC=500mA,VCE=10V,Ftest=1.
0MHz)fT160MHzProductparametricperformanceisindicatedintheElectricalCharacteristicsforthelistedtestconditions,unlessotherwisenoted.
ProductperformancemaynotbeindicatedbytheElectricalCharacteristicsifoperatedunderdifferentconditions.
3.
PulseTest:PulseWidth≤300ms,DutyCycle≤2%.
4.
fT=|hFE|ftestFigure1.
PowerDeratingTJ,TEMPERATURE(°C)15010075502500.
51.
01.
52.
02.
5PD,POWERDISSIPATION(W)TC125TANJT4030P,NJV4030Pwww.
onsemi.
com3TYPICALCHARACTERISTICSFigure2.
DCCurrentGainFigure3.
DCCurrentGainIC,COLLECTORCURRENT(A)IC,COLLECTORCURRENT(A)1010.
10.
010.
00101002003004005006001010.
10.
010.
0010100200300500600700Figure4.
CollectorEmitterSaturationVoltageFigure5.
CollectorEmitterSaturationVoltageIC,COLLECTORCURRENT(A)IC,COLLECTORCURRENT(A)1010.
10.
010.
0010.
0010.
010.
111010.
10.
010.
0010.
010.
11Figure6.
CollectorSaturationRegionFigure7.
VBE(on)VoltageIB,BASECURRENT(A)IC,COLLECTORCURRENT(A)1.
0E031.
0E040.
010.
111010.
10.
010.
00100.
10.
20.
30.
40.
50.
61.
2hFE,DCCURRENTGAINhFE,DCCURRENTGAINVCE(sat),COLLECTOREMITTERSATURATIONVOLTAGE(V)VCE(sat),COLLECTOREMITTERSATURATIONVOLTAGE(V)VCE(sat),COLLECTOREMITTERSATURATIONVOLTAGE(V)VBE(on),EMITTERBASEVOLTAGE(V)VCE=1V150°C40°C25°CVCE=4V150°C40°C25°C400IC/IB=10150°C40°C25°CIC/IB=50150°C40°C25°C1.
0E021.
0E011.
0E+000.
70.
80.
91.
01.
1VCE=2V150°C40°C25°CIC=2A0.
1A1A0.
5ANJT4030P,NJV4030Pwww.
onsemi.
com4TYPICALCHARACTERISTICS1001010.
010.
11100.
5ms10ms100ms1msFigure8.
BaseEmitterSaturationVoltageFigure9.
BaseEmitterSaturationVoltageIC,COLLECTORCURRENT(A)1010.
10.
010.
00100.
10.
20.
30.
70.
91.
11.
3Figure10.
InputCapacitanceFigure11.
OutputCapacitanceVEB,EMITTERBASEVOLTAGE(V)VCB,COLLECTORBASEVOLTAGE(V)654321005010015020025030035035302520151050020406080100Figure12.
CurrentGainBandwidthProductFigure13.
SafeOperatingAreaIC,COLLECTORCURRENT(A)VCE,COLLECTOREMITTERVOLTAGE(V)10.
10.
010.
0010204060120140180200VBE(sat),EMITTERBASESATURATIONVOLTAGE(V)Cibo,INPUTCAPACITANCE(pF)Cobo,OUTPUTCAPACITANCE(pF)fTau,CURRENTBANDWIDTHPRODUCT(MHz)IC,COLLECTORCURRENT(A)0.
40.
50.
60.
81.
01.
2IC/IB=10150°C40°C25°CIC,COLLECTORCURRENT(A)1010.
10.
010.
00100.
10.
20.
30.
70.
91.
1VBE(sat),EMITTERBASESATURATIONVOLTAGE(V)0.
40.
50.
60.
81.
01.
2IC/IB=50150°C40°C25°CTJ=25°Cftest=1MHzTJ=25°Cftest=1MHz80100160TJ=25°Cftest=1MHzVCE=10VSOT223(TO261)CASE318E04ISSUERDATE02OCT2018SCALE1:1qqMECHANICALCASEOUTLINEPACKAGEDIMENSIONSONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
98ASB42680BDOCUMENTNUMBER:DESCRIPTION:ElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromtheDocumentRepository.
Printedversionsareuncontrolledexceptwhenstamped"CONTROLLEDCOPY"inred.
PAGE1OF2SOT223(TO261)SemiconductorComponentsIndustries,LLC,2018www.
onsemi.
comSOT223(TO261)CASE318E04ISSUERDATE02OCT2018STYLE4:PIN1.
SOURCE2.
DRAIN3.
GATE4.
DRAINSTYLE6:PIN1.
RETURN2.
INPUT3.
OUTPUT4.
INPUTSTYLE8:CANCELLEDSTYLE1:PIN1.
BASE2.
COLLECTOR3.
EMITTER4.
COLLECTORSTYLE10:PIN1.
CATHODE2.
ANODE3.
GATE4.
ANODESTYLE7:PIN1.
ANODE12.
CATHODE3.
ANODE24.
CATHODESTYLE3:PIN1.
GATE2.
DRAIN3.
SOURCE4.
DRAINSTYLE2:PIN1.
ANODE2.
CATHODE3.
NC4.
CATHODESTYLE9:PIN1.
INPUT2.
GROUND3.
LOGIC4.
GROUNDSTYLE5:PIN1.
DRAIN2.
GATE3.
SOURCE4.
GATESTYLE11:PIN1.
MT12.
MT23.
GATE4.
MT2STYLE12:PIN1.
INPUT2.
OUTPUT3.
NC4.
OUTPUTSTYLE13:PIN1.
GATE2.
COLLECTOR3.
EMITTER4.
COLLECTOR1A=AssemblyLocationY=YearW=WorkWeekXXXXX=SpecificDeviceCodeG=PbFreePackageGENERICMARKINGDIAGRAM*AYWXXXXXGG(Note:Microdotmaybeineitherlocation)*Thisinformationisgeneric.
Pleaserefertodevicedatasheetforactualpartmarking.
PbFreeindicator,"G"ormicrodot"G",mayormaynotbepresent.
SomeproductsmaynotfollowtheGenericMarking.
ONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
98ASB42680BDOCUMENTNUMBER:DESCRIPTION:ElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromtheDocumentRepository.
Printedversionsareuncontrolledexceptwhenstamped"CONTROLLEDCOPY"inred.
PAGE2OF2SOT223(TO261)SemiconductorComponentsIndustries,LLC,2018www.
onsemi.
comwww.
onsemi.
com1ONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/PatentMarking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
ONSemiconductorisanEqualOpportunity/AffirmativeActionEmployer.
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