所述www

ONET8551Twww.
ti.
com.
cnZHCSBR1–OCTOBER2013具具有有接接收收信信号号强强度度指指示示器器(RSSI)的的11.
3Gbps限限幅幅互互阻阻抗抗放放大大器器查查询询样样片片:ONET8551T1特特性性应应用用范范围围9GHz带带宽宽10G以以太太网网10kΩ差差分分小小信信号号互互阻阻8G和和10G光光纤纤通通道道-20dBm灵灵敏敏度度10G以以太太无无源源光光网网络络(EPON)0.
9μARMS输输入入引引入入噪噪声声同同步步光光网网络络(SONET)OC-1922.
5mAp-p输输入入过过载载电电流流6G和和10G通通用用公公共共无无线线接接口口(CPRI)和和开开放放基基站站架架构构协协议议(OBSAI)接接收收信信号号强强度度指指示示(RSSI)光光电电二二极极管管(PIN)和和雪雪崩崩光光电电二二极极管管(APD)预预放放大大92mW典典型型功功率率耗耗散散器器接接收收器器支支持持片片上上50Ω背背向向端端接接的的电电流流模模式式逻逻辑辑(CML)数数据据输输出出说说明明片片上上电电源源滤滤波波电电容容器器ONET8551T是一款高速、高增益、限幅互阻抗放大+3.
3V单单电电源源器,此放大器用在数据传输速率高达11.
3Gbps的光芯芯片片尺尺寸寸::870μmx1036μm接收器中.
它特有低输入引入噪声,9GHz带宽,10kΩ小信号互阻,和一个接收信号强度指示器(RSSI).
ONET8551T器件以芯片形式提供,其中包括一个片上VCC旁路电容器,并且针对晶体管型外壳结构(TOcan)封装进行了优化.
ONET8551T器件需要一个+3.
3V单电源.
功效设计的功率耗散通常少于95mW.
该器件可在-40°C至100°C外壳(IC在背面)环境下工作.
1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2013,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLLSEI5necessarilyincludetestingofallparameters.
ONET8551TZHCSBR1–OCTOBER2013www.
ti.
com.
cnThisintegratedcircuitcanbedamagedbyESD.
TexasInstrumentsrecommendsthatallintegratedcircuitsbehandledwithappropriateprecautions.
Failuretoobserveproperhandlingandinstallationprocedurescancausedamage.
ESDdamagecanrangefromsubtleperformancedegradationtocompletedevicefailure.
Precisionintegratedcircuitsmaybemoresusceptibletodamagebecauseverysmallparametricchangescouldcausethedevicenottomeetitspublishedspecifications.
BondPadAssignmentofONET8551T(TOPVIEW)Figure1.
TheONET8551Tisavailableindieform.
Bondpadlocationsareshowninthistopview.
Table1.
BONDPADDESCRIPTIONPadSymbolTypeDescription1,3,6,10,14,GNDSupplyCircuitground.
AllGNDpadsareconnectedondie.
Bondingallpadsisoptional.
However,16,18,19foroptimumperformance,agoodgroundconnectionismandatory.
2OUT+AnalogoutputNon-invertedCMLdataoutput;on-chip50-Ωback-terminatedtoVCC4VCC_OUTSupply2.
8-Vto3.
63-VsupplyvoltageforAGCamplifier5VCC_INSupply2.
8-Vto3.
63-VsupplyvoltageforinputTIAstage7,9FILTERAnalogBiasvoltageforphotodiodecathode8INAnaloginputDatainputtoTIA(photodiodeanode)11NCNoconnectDonotconnect12RSSI_IBAnalogoutputAnalogoutputcurrentisproportionaltotheinputdataamplitude.
Itindicatesthestrengthofthereceivedsignal(RSSI),ifthephotodiodeisbiasedfromtheTIA.
Connectedtoanexternalresistortoground(GND).
Forproperoperation,ensurethatthevoltageattheRSSIpaddoesnotexceedVCC–0.
65V.
LeavethispadopeniftheRSSIfeatureisnotused.
13RSSI_EBAnalogoutputOptionalusewhenoperatedwithexternalPDbias(e.
g.
APD).
Analogoutputcurrentproportionaltotheinputdataamplitude.
Indicatesthestrengthofthereceivedsignal(RSSI).
Connectedtoanexternalresistortoground(GND).
Forproperoperation,ensurethatthevoltageattheRSSIpaddoesnotexceedVCC–0.
65V.
LeavethispadopeniftheRSSIfeatureisnotused.
15OUT–AnalogoutputInvertedCMLdataoutput;on-chip50-Ωback-terminatedtoVCC.
17BW1DigitalinputBandwidthadjustment.
Groundthepadtoincreasethebandwidth.
Internallypulled-uptoVCC20BW0DigitalinputBandwidthadjustment.
Groundthepadtoincreasethebandwidth.
Internallypulled-uptoVCCBack-sideofGNDSupplyConductiveepoxymustbeusedtoattachthedietoground.
die2Copyright2013,TexasInstrumentsIncorporatedONET8551Twww.
ti.
com.
cnZHCSBR1–OCTOBER2013Figure2.
SimplifiedBlockDiagramoftheONET8551TDeviceFigure2showsasimplifiedblockdiagramoftheONET8551Tdevice.
TheONET8551Tdeviceconsistsofthesignalpath,supplyfilters,acontrolblockforDCinputbias,automaticgaincontrol(AGC),andreceivedsignalstrengthindication(RSSI).
TheRSSIprovidesthebiasfortheTIAstageandthecontrolfortheAGC.
Thesignalpathconsistsofatransimpedanceamplifierstage,avoltageamplifier,andaCMLoutputbuffer.
Theon-chipfiltercircuitprovidesafilteredVCCforthePINphotodiodeandforthetransimpedanceamplifier.
TheDCinputbiascircuitandautomaticgaincontroluseinternallowpassfilterstocanceltheDCcurrentontheinputandtoadjustthetransimpedanceamplifiergain.
Furthermore,circuitryisprovidedtomonitorthereceivedsignalstrength.
Copyright2013,TexasInstrumentsIncorporated3ONET8551TZHCSBR1–OCTOBER2013www.
ti.
com.
cnABSOLUTEMAXIMUMRATINGSOveroperatingfree-airtemperaturerange(unlessotherwisenoted)(1)VALUEUNITMINMAXVCC_IN,VCC_OUTSupplyvoltage(2)–0.
34.
0VVBW0,VBW1,VoltageatBW0,BW1,FILTER1,FILTER2,OUT+,OUT–,RSSI_IB,and–0.
34.
0VFILTER1,VFILTER2,RSSI_EB(2)VOUT+,VOUT–,VRSSI_IB,VRSSI_EBIINCurrentintoIN–0.
74.
0mAIFILTERCurrentintoFILTER1andFILTER2–88IOUT+,IOUT–Continuouscurrentatoutputs–88ESDratingatallpinsexceptinputIN2kV(HBM)ESDESDratingatinputIN0.
5TJMaximumjunctiontemperature125°C(1)Stressesbeyondthoselistedunder"absolutemaximumratings"maycausepermanentdamagetothedevice.
Thesearestressratingsonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunder"recommendedoperatingconditions"isnotimplied.
Exposuretoabsolute–maximum–ratedconditionsforextendedperiodsmayaffectdevicereliability.
(2)Allvoltagevaluesarewithrespecttonetworkgroundterminal.
RECOMMENDEDOPERATINGCONDITIONSOveroperatingfree-airtemperaturerange(unlessotherwisenoted)MINNOMMAXUNITVCCSupplyvoltage2.
803.
33.
63VTAOperatingback-sidedietemperature–40100(1)°CLFILTER,LINWire-bondinductanceatpinsFILTERiandIN0.
30.
5nHCPDPhotodiodecapacitance0.
2pF(1)105°Cmaxjunctiontemperature.
4Copyright2013,TexasInstrumentsIncorporatedONET8551Twww.
ti.
com.
cnZHCSBR1–OCTOBER2013DCELECTRICALCHARACTERISTICSOverrecommendedoperatingconditionswithBW0=GNDandBW1=Open(unlessotherwisenoted).
TypicalvaluesareatVCC=+3.
3VandTA=25°C.
PARAMETERTESTCONDITIONSMINTYPMAXUNITVCCSupplyvoltage2.
803.
33.
63VIVCCSupplycurrentInputcurrentIIN9dB,BER10-1225AP-Pwww.
ti.
com.
cnDETAILEDDESCRIPTIONSIGNALPATHThefirststageofthesignalpathisatransimpedanceamplifier,whichconvertsthephotodiodecurrentintoavoltage.
Iftheinputsignalcurrentexceedsacertainvalue,thetransimpedancegainisreducedbyanonlinearAGCcircuittolimitthesignalamplitude.
Thesecondstageisalimitingvoltageamplifierthatprovidesadditionallimitinggainandconvertsthesingle-endedinputvoltageintoadifferentialdatasignal.
TheoutputstageprovidesCMLoutputswithanon-chip50-Ωback-terminationtoVCC.
FILTERCIRCUITRYTheFILTERpinsprovidearegulatedandfilteredVCCforaPINphotodiodebias.
Thesupplyvoltagesforthetransimpedanceamplifierarefilteredbyon-chipcapacitors,thusanexternalsupplyfiltercapacitorisnotnecessary.
TheinputstagehasaseparateVCCsupply(VCC_IN),whichisnotconnectedonchiptothesupplyofthelimitingandCMLstages(VCC_OUT).
AGCANDRSSIThevoltagedropacrosstheregulatedFILTERFETismonitoredbythebiasandRSSIcontrolcircuitblockinthecasewhereaPINdiodeisbiasedusingtheFILTERpins.
IftheDCinputcurrentexceedsacertainlevel,thenitispartiallycancelledbyacontrolledcurrentsource.
Thisprocesskeepsthetransimpedanceamplifierstagewithinsufficientoperatinglimitsforoptimumperformance.
TheautomaticgaincontrolcircuitryadjuststhevoltagegainoftheAGCamplifiertoensurelimitingbehaviorofthecompleteamplifier.
FinallythiscircuitblocksensesthecurrentthroughtheFILTERFETandgeneratesamirroredcurrentthatisproportionaltotheinputsignalstrength.
ThemirroredcurrentisavailableattheRSSI_IBoutputandcanbesunktoGNDusinganexternalresistor.
Forproperoperation,ensurethatthevoltageattheRSSI_IBpaddoesnotexceedVCC–0.
65V.
IfanAPDorPINphotodiodeisusedwithanexternalbias,thentheRSSI_EBpincanbeused.
However,forgreateraccuracyunderexternalphotodiodebiasingconditions,TIrecommendsderivingtheRSSIfromtheexternalbiascircuitry.
6Copyright2013,TexasInstrumentsIncorporatedONET8551Twww.
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com.
cnZHCSBR1–OCTOBER2013APPLICATIONINFORMATIONFigure3showstheONET8551Tdeviceusedinatypicalfiberopticreceiverwiththeinternalphotodiodebias.
TheONET8551TdeviceconvertstheelectricalcurrentgeneratedbythePINphotodiodeintoadifferentialoutputvoltage.
TheFILTERoutputprovidesalow-passfilteredDCbiasvoltageforthePIN.
ThephotodiodemustbeconnectedtotheFILTERpadforthebiastofunctioncorrectly,becausethebiascircuitsensesandusesthevoltagedropacrosstheFET.
TheRSSIoutputisusedtomirrorthephotodiodeoutputcurrentandcanbeconnectedviaaresistortoGND.
Thevoltagegaincanbeadjustedfortheintendedapplicationbychoosingtheexternalresistor.
However,forproperoperationoftheONET8551T,ensurethatthevoltageatRSSIneverexceedsVCC–0.
65V.
LeavetheRSSIoutputopen,iftheRSSIoutputisnotusedwhileoperatingwithinternalPDbias.
TheOUT+andOUT–pinsareinternallyterminatedby50-ΩpullupresistorstoVCC.
TheoutputsmustbeACcoupled,forexamplebyusing0.
1-μFcapacitors,tothesucceedingdevice.
ForPINdiodeapplications,TIrecommendsgroundingtheBW0pin.
However,forhigherbandwidth,theBW1pin,orboththeBW0andBW1pins,canbegrounded.
Toreducethebandwidth,theBW0andBW1pinscanbeleftopen.
Figure3.
BasicApplicationCircuitforPINReceiversFigure4showstheONET8551Tdeviceusedinatypicalfiber-opticreceiverusinganexternalphotodiodebiasforanavalanchephotodiode.
ToincreasethebandwidthusingAPDs,groundtheBW0andBW1pins.
ThisconfigurationcanalsobeusedforaPINdiode.
However,itmaybebeneficialtoreducethebandwidth,andthereforethenoise,bygroundingonlytheBW0pin.
TheexternalbiasRSSIsignalisbasedontheDCoffsetvalueandisnotasaccurateastheinternalbiasRSSI,whichisbasedonthephotodiodecurrent.
Copyright2013,TexasInstrumentsIncorporated7ONET8551TZHCSBR1–OCTOBER2013www.
ti.
com.
cnFigure4.
BasicApplicationCircuitforAPDReceiversDEVICEINFORMATIONASSEMBLYRECOMMENDATIONSCarefulattentiontoassemblyparasiticsandexternalcomponentsisnecessarytoachieveoptimalperformance.
Recommendationsthatoptimizeperformanceinclude:MinimizethetotalcapacitanceontheINpadbyusingalowcapacitancephotodiodeandpayingattentiontostraycapacitances.
PlacethephotodiodeclosetotheONET8551Tdieinordertominimizethebondwirelength,andthustheparasiticinductance.
UseidenticalterminationandsymmetricaltransmissionlinesattheACcoupleddifferentialoutputpins,OUT+andOUT–.
UseshortbondwireconnectionsforthesupplyterminalsVCC_IN,VCC_OUT,andGND.
Supplyvoltagefilteringisprovidedonchip,butfilteringmaybeimprovedbyusinganadditionalexternalcapacitor.
Thediehasback-sidemetal.
Conductiveepoxymustbeusedtoattachthedietoground.
8Copyright2013,TexasInstrumentsIncorporatedONET8551Twww.
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com.
cnZHCSBR1–OCTOBER2013CHIPDIMENSIONSANDPADLOCATIONSFigure5.
DieThickness:203±13μm,PadDimensions:105μmx65μm,andDieSize:870±40μmx1036±40μmCOORDINATES(ReferencedtoPad1)PADSYMBOLTYPEDESCRIPTIONx(μm)y(μm)100GNDSupplyCircuitground20–115OUT+AnalogoutputNon-inverteddataoutput30–230GNDSupplyCircuitground40–460VCC_OUTSupply3.
3-Vsupplyvoltage50–575VCC_INSupply3.
3-Vsupplyvoltage6116–728GNDSupplyCircuitground7226–728FILTER1AnalogoutputBiasvoltageforphotodiode8336–728INAnaloginputDatainputtoTIA9446–728FILTER2AnalogoutputBiasvoltageforphotodiode10556–728GNDSupplyCircuitground11666–728NCNoconnectDonotconnect12671–575RSSI_IBAnalogoutputRSSIoutputsignalforinternallybiasedreceivers13671–460RSSI_EBAnalogoutputRSSIoutputsignalforexternallybiasedreceivers14671–230GNDSupplyCircuitground15671–115OUT–AnalogoutputInverteddataoutput166710GNDSupplyCircuitground17508109BW1DigitalinputBandwidthadjustment18393109GNDSupplyCircuitground19278109GNDSupplyCircuitground20163109BW0DigitalinputBandwidthadjustmentCopyright2013,TexasInstrumentsIncorporated9ONET8551TZHCSBR1–OCTOBER2013www.
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cnTO46LAYOUTEXAMPLEFigure6showsanexampleofalayoutusingaground-signal-ground(GSG)typePINphotodiodeina5-pinTO46can.
Figure7showsanexampleofaPINphotodiodewithtwocontactsonthetop-side.
Figure6.
TO465-PinLayoutUsingtheONET8551TWithaGSGPINDiodeFigure7.
TO465-PinLayoutUsingtheONET8551TWithaTwo-ContactPINDiode10Copyright2013,TexasInstrumentsIncorporatedONET8551Twww.
ti.
com.
cnZHCSBR1–OCTOBER2013Figure8showsanexampleofalayoutusinganexternalbiasvoltageforthephotodiodeina5-pinTO46can.
Figure9showsanexamplewithaback-sidecathodecontactphotodiodeusingtheinternalbiasvoltage.
Figure8.
TO465-PinLayoutUsingtheONET8551TWithanAvalanchePhotodiodeFigure9.
TO465-PinLayoutUsingtheInternalBiasVoltageforaBack-SideCathodeContactPhotodiodeCopyright2013,TexasInstrumentsIncorporated11ONET8551TZHCSBR1–OCTOBER2013www.
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com.
cnTYPICALOPERATIONCHARACTERISTICSTypicaloperatingconditionisatVCC=+3.
3VandTA=+25°C(unlessotherwisenoted).
TRANSIMPEDANCESMALLSIGNALTRANSIMPEDANCEvsvsINPUTCURRENTAMBIENTTEMPERATUREFigure10.
Figure11.
GAIN(dB)SMALLSIGNALBANDWIDTHvsvsFREQUENCY(GHz)AMBIENTTEMPERATUREFigure12.
SmallSignalTransferCharacteristicsFigure13.
DIFFERENTIALOUTPUTVOLTAGEDETERMINISTICJITTERvsvsINPUTCURRENTINPUTCURRENTFigure14.
Figure15.
12Copyright2013,TexasInstrumentsIncorporatedONET8551Twww.
ti.
com.
cnZHCSBR1–OCTOBER2013TYPICALOPERATIONCHARACTERISTICS(continued)TypicaloperatingconditionisatVCC=+3.
3VandTA=+25°C(unlessotherwisenoted).
INPUTREFERREDNOISERSSI_IBOUTPUTCURRENTvsvsTEMPERATUREAVERAGEINPUTCURRENTFigure16.
Figure17.
OUTPUTEYE-DIAGRAMAT10.
3GBPSOUTPUTEYE-DIAGRAMAT10.
3GBPSAND20AP-PINPUTCURRENTAND100AP-PINPUTCURRENTFigure18.
Figure19.
OUTPUTEYE-DIAGRAMAT10.
3GBPSOUTPUTEYE-DIAGRAMAT10.
3GBPSAND500AP-PINPUTCURRENTAND2mAP-PINPUTCURRENTFigure20.
Figure21.
Copyright2013,TexasInstrumentsIncorporated13PACKAGEOPTIONADDENDUMwww.
ti.
com24-Apr-2019Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Lead/BallFinish(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesONET8551TYACTIVEDIESALEY01800TBDCallTICallTI-40to100ONET8551TYS4ACTIVEWAFERSALEYS01TBDCallTICallTI-40to100ONET8551TYS9ACTIVEWAFERSALEYS01TBDCallTICallTI-40to100(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsofwww.
ti.
com24-Apr-2019Addendum-Page2重重要要声声明明和和免免责责声声明明TI均以"原样"提供技术性及可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,不保证其中不含任何瑕疵,且不做任何明示或暗示的担保,包括但不限于对适销性、适合某特定用途或不侵犯任何第三方知识产权的暗示担保.
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