DC65ddd.com

65ddd.com  时间:2021-04-07  阅读:()
1.
GeneraldescriptionTheBGU8103is,alsoknownastheGPS1301M,anultralowcurrentandLow-NoiseAmplifier(LNA)forGNSSreceiverapplications.
TheBGU8103isavailableinasmallplastic6-pinextremelythinleadlesspackage.
TheBGU8103requiresonlyoneexternalmatchinginductor.
TheBGU8103adaptsitselftothechangingenvironmentresultingfromco-habitationofdifferentradiosystemsinmoderncellularhandsets.
Ithasbeendesignedforultralowpowerconsumptionandoptimalperformancewhenjammingsignalsfromco-existingcellulartransmittersarepresent.
Atlowjammingpowerlevels,itdelivers17.
5dBgainatanoisefigureof0.
80dBandasupplycurrentof1.
2mA.
Duringhighjammingpowerlevels,resultingforexamplefromacellulartransmitburst,ittemporarilyincreasesitsbiascurrenttoimprovesensitivity.
2.
FeaturesandbenefitsOptimizedperformanceatalowsupplycurrentof1.
2mACoversfullGNSSL1band,from1559MHzto1610MHzNoisefigure=0.
80dBGain17.
5dBInput1dBcompressionpointof16dBmOutofbandIP3iof8dBmSupplyvoltage1.
5Vto3.
1VSelf-shieldingpackageconceptIntegratedsupplydecouplingcapacitorPower-downmodecurrentconsumption2kV)IntegratedmatchingfortheoutputAvailableina6-pinleadlesspackage1.
1mm0.
7mm0.
37mm;0.
4mmpitch:SOT1232180GHztransitfrequency-SiGe:CtechnologyMoisturesensitivitylevel1BGU8103SiGe:Clow-noiseamplifierMMICforGPS,GLONASS,GalileoandCOMPASSRev.
3—18January2017Productdatasheet;621BGU8103Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—18January20172of12NXPSemiconductorsBGU8103SiGe:CLNAMMICforGPS,GLONASS,GalileoandCOMPASS3.
ApplicationsSmartphonesFeaturephonesTabletsDigitalstillcamerasDigitalvideocamerasRFfront-endmodulesCompleteGNSSmodulesPersonalhealthapplications4.
Quickreferencedata[1]PCBlossesaresubtracted.
[2]Guaranteedbydevicedesign;nottestedinproduction.
[3]f1=1713MHz;f2=1851MHz;Pi=20dBmatf1;Pi=65dBmatf2.
5.
Orderinginformation6.
MarkingTable1.
Quickreferencedataf=1575MHz;VCC=1.
8V;VI(ENABLE)0.
8V;Pi<40dBm;Tamb=25C;inputmatchedto50usinga12nHinductor;seeFigure3;unlessotherwisespecified.
SymbolParameterConditionsMinTypMaxUnitVCCsupplyvoltageRFinputACcoupled1.
5-3.
1VICCsupplycurrentPi<40dBm0.
81.
21.
6mAGppowergainnojammer14.
517.
520.
0dBNFnoisefigurePi=40dBm;nojammer[1][2]-0.
81.
4dBPi(1dB)inputpowerat1dBgaincompression[2]1916-dBmIP3iinputthird-orderinterceptpoint[2][3]118-dBmTable2.
OrderinginformationTypenumberPackageNameDescriptionVersionBGU8103XSON6plasticextremelythinsmalloutlinepackage;noleads;6terminals;body1.
10.
70.
37mmSOT1232Table3.
MarkingcodesTypenumberMarkingcodeBGU8103GBGU8103Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—18January20173of12NXPSemiconductorsBGU8103SiGe:CLNAMMICforGPS,GLONASS,GalileoandCOMPASS7.
Blockdiagram8.
Pinninginformation8.
1PinningFig1.
BlockdiagramDDD%,$6&21752/(1$%/(5)B,15)B2879&&Fig2.
Pinconfiguration5)B287*1'B5)9&&5)B,1*1'(1$%/(7UDQVSDUHQWWRSYLHZ%*8DDDBGU8103Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—18January20174of12NXPSemiconductorsBGU8103SiGe:CLNAMMICforGPS,GLONASS,GalileoandCOMPASS8.
2Pindescription9.
Limitingvalues[1]Stressedwithpulsesof200msinduration,withapplicationcircuitasinFigure3.
[2]Warning:DuetointernalESDdiodeprotection,toavoidexcesscurrent,theappliedDCvoltagemustnotexceedVCC+0.
6Vor5.
0V.
[3]TheRFinputandRFoutputareACcoupledthroughinternalDCblockingcapacitors.
10.
RecommendedoperatingconditionsTable4.
PindescriptionSymbolPinDescriptionGND1groundVCC2supplyvoltageRF_OUT3RFoutputGND_RF4groundRFRF_IN5RFinputENABLE6enableTable5.
LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
SeeSection18.
3"Disclaimers",paragraph"Limitingvalues".
SymbolParameterConditionsMinMaxUnitVCCsupplyvoltageRFinputACcoupled[1]0.
5+5.
0VVI(ENABLE)inputvoltageonpinENABLEVI(ENABLE)6V[1][2]0.
5+5.
0VVI(RF_IN)inputvoltageonpinRF_INDC;VI(RF_IN)6V[1][2][3]0.
5+5.
0VVI(RF_OUT)inputvoltageonpinRF_OUTDC;VI(RF_OUT)6V[1][2][3]0.
5+5.
0VPiinputpower[1]-10dBmPtottotalpowerdissipationTsp130C-55mWTstgstoragetemperature65+150CTjjunctiontemperature-150CVESDelectrostaticdischargevoltageHumanBodyModel(HBM)accordingtoJEDECstandardJS-001-2010-2kVChargedDeviceModel(CDM)accordingtoJEDECstandardJESD22-C101C-2kVTable6.
OperatingconditionsSymbolParameterConditionsMinTypMaxUnitVCCsupplyvoltage1.
5-3.
1VTambambienttemperature40+25+85CVI(ENABLE)inputvoltageonpinENABLEOFFstate--0.
3VONstate0.
8--VBGU8103Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—18January20175of12NXPSemiconductorsBGU8103SiGe:CLNAMMICforGPS,GLONASS,GalileoandCOMPASS11.
Thermalcharacteristics12.
Characteristics[1]PCBlossesaresubtracted.
[2]Guaranteedbydevicedesign;nottestedinproduction.
[3]IncludingPCBlosses.
[4]f1=1713MHz;f2=1851MHz;Pi=20dBmatf1;Pi=65dBmatf2.
Table7.
ThermalcharacteristicsSymbolParameterConditionsTypUnitRth(j-sp)thermalresistancefromjunctiontosolderpoint225K/WTable8.
CharacteristicsatVCC=1.
8Vf=1575MHz;VCC=1.
8V;VI(ENABLE)0.
8V;Pi<40dBm;Tamb=25C;inputmatchedto50usinga12nHinductor;seeFigure3;unlessotherwisespecified.
SymbolParameterConditionsMinTypMaxUnitICCsupplycurrentVI(ENABLE)0.
8VPi<40dBm0.
81.
21.
6mAPi=20dBm-2.
5-mAVI(ENABLE)0.
3V--1AGppowergainnojammer14.
517.
520.
0dBPjam=20dBm;fjam=850MHz-18.
5-dBPjam=20dBm;fjam=1850MHz-18.
0-dBRLininputreturnlossPi<40dBm-8-dBPi=20dBm-9-dBRLoutoutputreturnlossPi<40dBm-11-dBPi=20dBm-11-dBISLisolation-35-dBNFnoisefigurePi=40dBm;nojammer[1][2]-0.
81.
4dBPi=40dBm;nojammer[2][3]-0.
91.
5dBPjam=20dBm;fjam=850MHz[3]-1.
1-dBPjam=20dBm;fjam=1850MHz[3]-1.
4-dBPi(1dB)inputpowerat1dBgaincompression[2]1916-dBmIP3iinputthird-orderinterceptpoint[2][4]118-dBmIMD3third-orderintermodulationdistortionoutputreferred[4]-72-dBmtonturn-ontimetimefromVI(ENABLE)ONto90%ofthegain--2stoffturn-offtimetimefromVI(ENABLE)OFFto10%ofthegain--1sBGU8103Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—18January20176of12NXPSemiconductorsBGU8103SiGe:CLNAMMICforGPS,GLONASS,GalileoandCOMPASS[1]PCBlossesaresubtracted.
[2]Guaranteedbydevicedesign;nottestedinproduction.
[3]IncludingPCBlosses.
[4]f1=1713MHz;f2=1851MHz;Pi=20dBmatf1;Pi=65dBmatf2.
Table9.
CharacteristicsatVCC=2.
85Vf=1575MHz;VCC=2.
85V;VI(ENABLE)0.
8V;Pi<40dBm;Tamb=25C;inputmatchedto50usinga12nHinductor;seeFigure3;unlessotherwisespecified.
SymbolParameterConditionsMinTypMaxUnitICCsupplycurrentVI(ENABLE)0.
8VPi<40dBm0.
81.
21.
6mAPi=20dBm-2.
5-mAVI(ENABLE)0.
3V--1AGppowergainnojammer15.
017.
520.
0dBPjam=20dBm;fjam=850MHz-18.
5-dBPjam=20dBm;fjam=1850MHz-18.
5-dBRLininputreturnlossPi<40dBm-8-dBPi=20dBm-9-dBRLoutoutputreturnlossPi<40dBm-11-dBPi=20dBm-11-dBISLisolation-35-dBNFnoisefigurePi=40dBm;nojammer[1][2]-1.
01.
4dBPi=40dBm;nojammer[2][3]-1.
11.
5dBPjam=20dBm;fjam=850MHz[3]-1.
1-dBPjam=20dBm;fjam=1850MHz[3]-1.
4-dBPi(1dB)inputpowerat1dBgaincompression[2]1613-dBmIP3iinputthird-orderinterceptpoint[2][4]107-dBmIMD3third-orderintermodulationdistortionoutputreferred[4]-72-dBmtonturn-ontimetimefromVI(ENABLE)ONto90%ofthegain--2stoffturn-offtimetimefromVI(ENABLE)OFFto10%ofthegain--1sBGU8103Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—18January20177of12NXPSemiconductorsBGU8103SiGe:CLNAMMICforGPS,GLONASS,GalileoandCOMPASS13.
Applicationinformation13.
1GNSSLNAForalistofcomponents,seeTable10.
Fig3.
SchematicsGNSSLNAevaluationboardTable10.
ListofcomponentsForschematics,seeFigure3.
ComponentDescriptionValueRemarksC1decouplingcapacitor1nFtosuppresspowersupplynoiseIC1BGU8103-NXPSemiconductorsL1high-qualitymatchinginductor12nHMurataLQW15ADDD/5)RXW5)LQ9HQ9FF&,&BGU8103Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—18January20178of12NXPSemiconductorsBGU8103SiGe:CLNAMMICforGPS,GLONASS,GalileoandCOMPASS14.
PackageoutlineFig4.
PackageoutlineSOT1232(XSON6)5HIHUHQFHV2XWOLQHYHUVLRQ(XURSHDQSURMHFWLRQ,VVXHGDWH7$627VRWBSR8QLWPPPLQQRPPD[$'LPHQVLRQVPPDUHWKHRULJLQDOGLPHQVLRQV1RWH'LPHQVLRQ$LVLQFOXGLQJSODWLQJWKLFNQHVV627$'(H/9<NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—18January20179of12NXPSemiconductorsBGU8103SiGe:CLNAMMICforGPS,GLONASS,GalileoandCOMPASS15.
Handlinginformation16.
Abbreviations17.
RevisionhistoryCAUTIONThisdeviceissensitivetoElectroStaticDischarge(ESD).
Observeprecautionsforhandlingelectrostaticsensitivedevices.
SuchprecautionsaredescribedintheANSI/ESDS20.
20,IEC/ST61340-5,JESD625-Aorequivalentstandards.
Table11.
AbbreviationsAcronymDescriptionESDElectroStaticDischargeGLONASSGLObalNAvigationSatelliteSystemGNSSGlobalNavigationSatelliteSystemGPSGlobalPositioningSystemHBMHumanBodyModelLNALow-NoiseAmplifierMMICMonolithicMicrowaveIntegratedCircuitPCBPrinted-CircuitBoardSiGe:CSiliconGermaniumCarbonTable12.
RevisionhistoryDocumentIDReleasedateDatasheetstatusChangenoticeSupersedesBGU8103v.
320170118Productdatasheet-BGU8103v.
2Modifications:Section1:addedGPS1301MaccordingtoournewnamingconventionBGU8103v.
220160325Productdatasheet-BGU8103v.
1Modifications:DatasheetstatuschangedfromPreliminarydatasheettoProductdatasheetBGU8103v.
120151221Preliminarydatasheet--BGU8103Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—18January201710of12NXPSemiconductorsBGU8103SiGe:CLNAMMICforGPS,GLONASS,GalileoandCOMPASS18.
Legalinformation18.
1Datasheetstatus[1]Pleaseconsultthemostrecentlyissueddocumentbeforeinitiatingorcompletingadesign.
[2]Theterm'shortdatasheet'isexplainedinsection"Definitions".
[3]Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.
ThelatestproductstatusinformationisavailableontheInternetatURLhttp://www.
nxp.
com.
18.
2DefinitionsDraft—Thedocumentisadraftversiononly.
Thecontentisstillunderinternalreviewandsubjecttoformalapproval,whichmayresultinmodificationsoradditions.
NXPSemiconductorsdoesnotgiveanyrepresentationsorwarrantiesastotheaccuracyorcompletenessofinformationincludedhereinandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
Shortdatasheet—Ashortdatasheetisanextractfromafulldatasheetwiththesameproducttypenumber(s)andtitle.
Ashortdatasheetisintendedforquickreferenceonlyandshouldnotbereliedupontocontaindetailedandfullinformation.
Fordetailedandfullinformationseetherelevantfulldatasheet,whichisavailableonrequestviathelocalNXPSemiconductorssalesoffice.
Incaseofanyinconsistencyorconflictwiththeshortdatasheet,thefulldatasheetshallprevail.
Productspecification—TheinformationanddataprovidedinaProductdatasheetshalldefinethespecificationoftheproductasagreedbetweenNXPSemiconductorsanditscustomer,unlessNXPSemiconductorsandcustomerhaveexplicitlyagreedotherwiseinwriting.
Innoeventhowever,shallanagreementbevalidinwhichtheNXPSemiconductorsproductisdeemedtoofferfunctionsandqualitiesbeyondthosedescribedintheProductdatasheet.
18.
3DisclaimersLimitedwarrantyandliability—Informationinthisdocumentisbelievedtobeaccurateandreliable.
However,NXPSemiconductorsdoesnotgiveanyrepresentationsorwarranties,expressedorimplied,astotheaccuracyorcompletenessofsuchinformationandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
NXPSemiconductorstakesnoresponsibilityforthecontentinthisdocumentifprovidedbyaninformationsourceoutsideofNXPSemiconductors.
InnoeventshallNXPSemiconductorsbeliableforanyindirect,incidental,punitive,specialorconsequentialdamages(including-withoutlimitation-lostprofits,lostsavings,businessinterruption,costsrelatedtotheremovalorreplacementofanyproductsorreworkcharges)whetherornotsuchdamagesarebasedontort(includingnegligence),warranty,breachofcontractoranyotherlegaltheory.
Notwithstandinganydamagesthatcustomermightincurforanyreasonwhatsoever,NXPSemiconductors'aggregateandcumulativeliabilitytowardscustomerfortheproductsdescribedhereinshallbelimitedinaccordancewiththeTermsandconditionsofcommercialsaleofNXPSemiconductors.
Righttomakechanges—NXPSemiconductorsreservestherighttomakechangestoinformationpublishedinthisdocument,includingwithoutlimitationspecificationsandproductdescriptions,atanytimeandwithoutnotice.
Thisdocumentsupersedesandreplacesallinformationsuppliedpriortothepublicationhereof.
Suitabilityforuse—NXPSemiconductorsproductsarenotdesigned,authorizedorwarrantedtobesuitableforuseinlifesupport,life-criticalorsafety-criticalsystemsorequipment,norinapplicationswherefailureormalfunctionofanNXPSemiconductorsproductcanreasonablybeexpectedtoresultinpersonalinjury,deathorseverepropertyorenvironmentaldamage.
NXPSemiconductorsanditssuppliersacceptnoliabilityforinclusionand/oruseofNXPSemiconductorsproductsinsuchequipmentorapplicationsandthereforesuchinclusionand/oruseisatthecustomer'sownrisk.
Applications—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.
NXPSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertestingormodification.
CustomersareresponsibleforthedesignandoperationoftheirapplicationsandproductsusingNXPSemiconductorsproducts,andNXPSemiconductorsacceptsnoliabilityforanyassistancewithapplicationsorcustomerproductdesign.
Itiscustomer'ssoleresponsibilitytodeterminewhethertheNXPSemiconductorsproductissuitableandfitforthecustomer'sapplicationsandproductsplanned,aswellasfortheplannedapplicationanduseofcustomer'sthirdpartycustomer(s).
Customersshouldprovideappropriatedesignandoperatingsafeguardstominimizetherisksassociatedwiththeirapplicationsandproducts.
NXPSemiconductorsdoesnotacceptanyliabilityrelatedtoanydefault,damage,costsorproblemwhichisbasedonanyweaknessordefaultinthecustomer'sapplicationsorproducts,ortheapplicationorusebycustomer'sthirdpartycustomer(s).
Customerisresponsiblefordoingallnecessarytestingforthecustomer'sapplicationsandproductsusingNXPSemiconductorsproductsinordertoavoidadefaultoftheapplicationsandtheproductsoroftheapplicationorusebycustomer'sthirdpartycustomer(s).
NXPdoesnotacceptanyliabilityinthisrespect.
Limitingvalues—Stressaboveoneormorelimitingvalues(asdefinedintheAbsoluteMaximumRatingsSystemofIEC60134)willcausepermanentdamagetothedevice.
Limitingvaluesarestressratingsonlyand(proper)operationofthedeviceattheseoranyotherconditionsabovethosegivenintheRecommendedoperatingconditionssection(ifpresent)ortheCharacteristicssectionsofthisdocumentisnotwarranted.
Constantorrepeatedexposuretolimitingvalueswillpermanentlyandirreversiblyaffectthequalityandreliabilityofthedevice.
Termsandconditionsofcommercialsale—NXPSemiconductorsproductsaresoldsubjecttothegeneraltermsandconditionsofcommercialsale,aspublishedathttp://www.
nxp.
com/profile/terms,unlessotherwiseagreedinavalidwrittenindividualagreement.
Incaseanindividualagreementisconcludedonlythetermsandconditionsoftherespectiveagreementshallapply.
NXPSemiconductorsherebyexpresslyobjectstoapplyingthecustomer'sgeneraltermsandconditionswithregardtothepurchaseofNXPSemiconductorsproductsbycustomer.
Nooffertosellorlicense—Nothinginthisdocumentmaybeinterpretedorconstruedasanoffertosellproductsthatisopenforacceptanceorthegrant,conveyanceorimplicationofanylicenseunderanycopyrights,patentsorotherindustrialorintellectualpropertyrights.
Documentstatus[1][2]Productstatus[3]DefinitionObjective[short]datasheetDevelopmentThisdocumentcontainsdatafromtheobjectivespecificationforproductdevelopment.
Preliminary[short]datasheetQualificationThisdocumentcontainsdatafromthepreliminaryspecification.
Product[short]datasheetProductionThisdocumentcontainstheproductspecification.
BGU8103Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—18January201711of12NXPSemiconductorsBGU8103SiGe:CLNAMMICforGPS,GLONASS,GalileoandCOMPASSQuickreferencedata—TheQuickreferencedataisanextractoftheproductdatagivenintheLimitingvaluesandCharacteristicssectionsofthisdocument,andassuchisnotcomplete,exhaustiveorlegallybinding.
Exportcontrol—Thisdocumentaswellastheitem(s)describedhereinmaybesubjecttoexportcontrolregulations.
Exportmightrequireapriorauthorizationfromcompetentauthorities.
Non-automotivequalifiedproducts—UnlessthisdatasheetexpresslystatesthatthisspecificNXPSemiconductorsproductisautomotivequalified,theproductisnotsuitableforautomotiveuse.
Itisneitherqualifiednortestedinaccordancewithautomotivetestingorapplicationrequirements.
NXPSemiconductorsacceptsnoliabilityforinclusionand/oruseofnon-automotivequalifiedproductsinautomotiveequipmentorapplications.
Intheeventthatcustomerusestheproductfordesign-inanduseinautomotiveapplicationstoautomotivespecificationsandstandards,customer(a)shallusetheproductwithoutNXPSemiconductors'warrantyoftheproductforsuchautomotiveapplications,useandspecifications,and(b)whenevercustomerusestheproductforautomotiveapplicationsbeyondNXPSemiconductors'specificationssuchuseshallbesolelyatcustomer'sownrisk,and(c)customerfullyindemnifiesNXPSemiconductorsforanyliability,damagesorfailedproductclaimsresultingfromcustomerdesignanduseoftheproductforautomotiveapplicationsbeyondNXPSemiconductors'standardwarrantyandNXPSemiconductors'productspecifications.
Translations—Anon-English(translated)versionofadocumentisforreferenceonly.
TheEnglishversionshallprevailincaseofanydiscrepancybetweenthetranslatedandEnglishversions.
18.
4TrademarksNotice:Allreferencedbrands,productnames,servicenamesandtrademarksarethepropertyoftheirrespectiveowners.
19.
ContactinformationFormoreinformation,pleasevisit:http://www.
nxp.
comForsalesofficeaddresses,pleasesendanemailto:salesaddresses@nxp.
comNXPSemiconductorsBGU8103SiGe:CLNAMMICforGPS,GLONASS,GalileoandCOMPASSNXPSemiconductorsN.
V.
2017.
Allrightsreserved.
Formoreinformation,pleasevisit:http://www.
nxp.
comForsalesofficeaddresses,pleasesendanemailto:salesaddresses@nxp.
comDateofrelease:18January2017Documentidentifier:BGU8103Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s)describedherein,havebeenincludedinsection'Legalinformation'.
20.
Contents1Generaldescription12Featuresandbenefits13Applications24Quickreferencedata25Orderinginformation.
26Marking27Blockdiagram38Pinninginformation.
38.
1Pinning38.
2Pindescription49Limitingvalues.
410Recommendedoperatingconditions.
411Thermalcharacteristics.
512Characteristics.
513Applicationinformation.
713.
1GNSSLNA714Packageoutline815Handlinginformation.
916Abbreviations917Revisionhistory.
918Legalinformation.
1018.
1Datasheetstatus1018.
2Definitions.
1018.
3Disclaimers1018.
4Trademarks.
1119Contactinformation.
1120Contents12

美国200G美国高防服务器16G,800元

美国高防服务器提速啦专业提供美国高防服务器,美国高防服务器租用,美国抗攻击服务器,高防御美国服务器租用等。我们的海外高防服务器带给您坚不可摧的DDoS防护,保障您的业务不受攻击影响。HostEase美国高防服务器位于加州和洛杉矶数据中心,均为国内访问速度最快最稳定的美国抗攻击机房,带给您快速的访问体验。我们的高防服务器配有最高层级的DDoS防护系统,每款抗攻击服务器均拥有免费DDoS防护额度,让您...

DMIT(季度$28.88)调整洛杉矶CN2 GIA优化端口

对于DMIT商家已经关注有一些时候,看到不少的隔壁朋友们都有分享到,但是这篇还是我第一次分享这个服务商。根据看介绍,DMIT是一家成立于2017年的美国商家,据说是由几位留美学生创立的,数据中心位于香港、伯力G-Core和洛杉矶,主打香港CN2直连云服务器、美国CN2直连云服务器产品。最近看到DMIT商家有对洛杉矶CN2 GIA VPS端口进行了升级,不过价格没有变化,依然是季付28.88美元起。...

EdgeNat 新年开通优惠 - 韩国独立服务器原生IP地址CN2线路七折优惠

EdgeNat 商家在之前也有分享过几次活动,主要提供香港和韩国的VPS主机,分别在沙田和首尔LG机房,服务器均为自营硬件,电信CN2线路,移动联通BGP直连,其中VPS主机基于KVM架构,宿主机采用四路E5处理器、raid10+BBU固态硬盘!最高可以提供500Gbps DDoS防御。这次开年活动中有提供七折优惠的韩国独立服务器,原生IP地址CN2线路。第一、优惠券活动EdgeNat优惠码(限月...

65ddd.com为你推荐
lunwenjiancepaperfree论文检测怎样算合格陈嘉垣反黑阿欣是谁演的 扮演者介绍xyq.163.cbg.com梦幻CBG的网站是什么。丑福晋历史上真正的八福晋是什么样子的?百度关键词分析如何正确分析关键词?m.kan84.net那里有免费的电影看?ww.66bobo.com这个WWW ̄7222hh ̄com是不是真的不太易开了,换了吗?dpscycle寻求LR 高输出宏龚如敏请问这张图片出自哪里?www.bbbb.com二级域名怎么申请?看URL怎么分辨出二级域名、三级域名
日本vps 服务器配置技术网 sharktech 美国独立服务器 enzu 台湾服务器 l5520 gateone mobaxterm 免费名片模板 seovip 双拼域名 工信部icp备案号 免费的asp空间 电信宽带测速软件 cdn服务 睿云 中国电信宽带测速 聚惠网 新网dns 更多