loadsavmask.net

LMH6609www.
ti.
comSNOSA84E–MAY2004–REVISEDJANUARY2011LMH6609900MHzVoltageFeedbackOpAmpCheckforSamples:LMH66091FEATURESDESCRIPTION23900MHz3dBbandwidth(AV=1)TheLMH6609isanultrawideband,unitygainstable,Largesignalbandwidthandslewrate100%lowpower,voltagefeedbackopampthatofferstested900MHzbandwidthatagainof1,1400V/μsslewrate280MHz3dBbandwidth(AV=+2,VOUT=2VPP)and90mAoflinearoutputcurrent.
90mAlinearoutputcurrentTheLMH6609isdesignedwithvoltagefeedback1400V/μsslewratearchitectureformaximumflexibilityespeciallyforactivefiltersandintegrators.
TheLMH6609hasUnitygainstablebalanced,symmetricalinputswithwell-matchedbias1MHz3.
1nV/√HzCNCurrentNoise>1MHz1.
6pA/√HzStatic,DCPerformance±2.
5VIOInputOffsetVoltage±0.
8mV±3.
5InputVoltageTemperatureDrift4μV/°C±5IBNInputBiasCurrent2A±8BiasCurrentTemperatureDrift11nA/°C±1.
5IBIInputOffsetCurrent0.
1A±367PSRRPowerSupplyRejectionRatioDC,1VStep73dB6567CMRRCommonModeRejectionRatioDC,2VStep73dB657.
8ICCSupplyCurrentRL=∞7.
0mA8.
5MiscellaneousPerformanceRINInputResistance1MCINInputCapacitance1.
2pFROUTOutputResistanceClosedLoop0.
3±3.
6VORL=∞±3.
9V±3.
3OutputVoltageRange±3.
2VOLRL=100±3.
5V±3.
0±2.
8CMIRInputVoltageRangeCommonMode,CMRR>60dB±3.
0V±2.
5±60IOLinearOutputCurrent±90mAVOUT±50(1)ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.
Factorytestingconditionsresultinverylimitedself-heatingofthedevicesuchthatTJ=TA.
NospecificationofparametricperformanceisindicatedintheelectricaltablesunderconditionsofinternalselfheatingwhereTJ>TA.
SeeApplicationsSectionforinformationontemperaturederatingofthisdevice.
Min/Maxratingsarebasedonproductcharacterizationandsimulation.
Individualparametersaretestedasnoted.
(2)rateisAverageofRisingandFalling40-60%slewrates.
Copyright2004–2011,TexasInstrumentsIncorporatedSubmitDocumentationFeedback3ProductFolderLinks:LMH6609LMH6609SNOSA84E–MAY2004–REVISEDJANUARY2011www.
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com±3.
3VElectricalCharacteristicsUnlessspecified,AV=+2,RF=250:VS=±3.
3V,RL=100;unlessotherwisespecified.
BoldfacelimitsapplyovertemperatureRange.
(1)SymbolParameterConditionsMinTypMaxUnitsFrequencyDomainResponseSSBW3dBBandwidthVOUT=0.
5VPP180MHzLSBW3dBBandwidthVOUT=3.
0VPP110MHzSSBWG13dBBandwidthAV=1VOUT=0.
25VPP450MHzGFP.
1dBBandwidthVOUT=1VPP40MHzDGDifferentialGainRL=150,4.
43MHz.
01%DPDifferentialPhaseRL=150,4.
43MHz.
06degTimeDomainResponseTRL1VStep2.
2nsSRSlewRate2VStep(2)800V/sDistortionandNoiseResponseHD22ndHarmonicDistortion2VPP,20MHz63dBcHD33rdHarmonicDistortion2VPP,20MHz43dBcEquivalentInputNoisenV/VNVoltageNoise>1MHz3.
7pA/√HzCNCurrentNoise>1MHz1.
1pA/√HzStatic,DCPerformance±2.
5VIOInputOffsetVoltage0.
8mV±3.
51±3IBNInputBiasCurrentA±60±1.
5IBIInputOffsetCurrentA±3PSRRPowerSupplyRejectionRatioDC,.
5VStep6773dBCMRRCommonModeRejectionRatioDC,1VStep6775dBRL=∞3.
65mAICCSupplyCurrent6MiscellaneousPerformanceROUTInputResistanceCloseLoop.
05VORL=∞±2.
1±2.
3VOutputVoltageRangeVOLRL=100±1.
9±2.
0VCMIRInputVoltageRangeCommonMode±1.
3VIOLinearOutputCurrentVOUT±30±45mA(1)ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.
Factorytestingconditionsresultinverylimitedself-heatingofthedevicesuchthatTJ=TA.
NospecificationofparametricperformanceisindicatedintheelectricaltablesunderconditionsofinternalselfheatingwhereTJ>TA.
SeeApplicationsSectionforinformationontemperaturederatingofthisdevice.
Min/Maxratingsarebasedonproductcharacterizationandsimulation.
Individualparametersaretestedasnoted.
(2)rateisAverageofRisingandFalling40-60%slewrates.
4SubmitDocumentationFeedbackCopyright2004–2011,TexasInstrumentsIncorporatedProductFolderLinks:LMH6609LMH6609www.
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comSNOSA84E–MAY2004–REVISEDJANUARY2011CONNECTIONDIAGRAM8-PinSOIC(TopView)5-PinSOT23(TopView)SeePackageNumberDBV0005ASeePackageNumberD0008ACopyright2004–2011,TexasInstrumentsIncorporatedSubmitDocumentationFeedback5ProductFolderLinks:LMH6609LMH6609SNOSA84E–MAY2004–REVISEDJANUARY2011www.
ti.
comTypicalPerformanceCharacteristicsSmallSignalNon-InvertingFrequencyResponseLargeSignalNon-InvertingFrequencyResponseFigure2.
Figure3.
SmallSignalInvertingFrequencyResponseLargeSignalInvertingFrequencyResponseFigure4.
Figure5.
FrequencyResponseFrequencyResponsevs.
vs.
VOUTAV=2VOUTAV=2Figure6.
Figure7.
6SubmitDocumentationFeedbackCopyright2004–2011,TexasInstrumentsIncorporatedProductFolderLinks:LMH6609LMH6609www.
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comSNOSA84E–MAY2004–REVISEDJANUARY2011TypicalPerformanceCharacteristics(continued)FrequencyResponseFrequencyResponsevs.
vs.
VOUTAV=1VOUTAV=1Figure8.
Figure9.
FrequencyResponseFrequencyResponsevs.
vs.
VOUTAV=1CapLoadFigure10.
Figure11.
FrequencyResponseSuggestedROUTvs.
vs.
CapLoadCapLoadFigure12.
Figure13.
Copyright2004–2011,TexasInstrumentsIncorporatedSubmitDocumentationFeedback7ProductFolderLinks:LMH6609LMH6609SNOSA84E–MAY2004–REVISEDJANUARY2011www.
ti.
comTypicalPerformanceCharacteristics(continued)CMRRPSRRvs.
vs.
FrequencyFrequencyFigure14.
Figure15.
PSRRvs.
FrequencyPulseResponseFigure16.
Figure17.
PulseResponseLargeSignalPulseResponseFigure18.
Figure19.
8SubmitDocumentationFeedbackCopyright2004–2011,TexasInstrumentsIncorporatedProductFolderLinks:LMH6609LMH6609www.
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comSNOSA84E–MAY2004–REVISEDJANUARY2011TypicalPerformanceCharacteristics(continued)NoiseHD2vs.
vs.
FrequencyVOUTFigure20.
Figure21.
HD3HD2vs.
vs.
VOUTVOUTFigure22.
Figure23.
HD3HD2&HD3vs.
vs.
VOUTFrequencyFigure24.
Figure25.
Copyright2004–2011,TexasInstrumentsIncorporatedSubmitDocumentationFeedback9ProductFolderLinks:LMH6609LMH6609SNOSA84E–MAY2004–REVISEDJANUARY2011www.
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comTypicalPerformanceCharacteristics(continued)HD2&HD3vs.
FrequencyDifferentialGain&PhaseFigure26.
Figure27.
DifferentialGain&PhaseOpenLoopGain&PhaseFigure28.
Figure29.
OpenLoopGain&PhaseClosedLoopOutputResistanceFigure30.
Figure31.
10SubmitDocumentationFeedbackCopyright2004–2011,TexasInstrumentsIncorporatedProductFolderLinks:LMH6609LMH6609www.
ti.
comSNOSA84E–MAY2004–REVISEDJANUARY2011APPLICATIONINFORMATIONGENERALDESIGNEQUATIONTheLMH6609isaunitygainstablevoltagefeedbackamplifier.
Thematchedinputbiascurrentstrackwellovertemperature.
ThisallowstheDCoffsettobeminimizedbymatchingtheimpedanceseenbybothinputs.
GAINThenon-invertingandinvertinggainequationsfortheLMH6609areasfollows:(1)Figure32.
TypicalNon-InvertingApplicationCopyright2004–2011,TexasInstrumentsIncorporatedSubmitDocumentationFeedback11ProductFolderLinks:LMH6609LMH6609SNOSA84E–MAY2004–REVISEDJANUARY2011www.
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comFigure33.
TypicalInvertingApplicationFigure34.
SingleSupplyInverting12SubmitDocumentationFeedbackCopyright2004–2011,TexasInstrumentsIncorporatedProductFolderLinks:LMH6609LMH6609www.
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comSNOSA84E–MAY2004–REVISEDJANUARY2011Figure35.
ACCoupledNon-InvertingGAINBANDWIDTHPRODUCTTheLMH6609isavoltagefeedbackamplifier,whoseclosed-loopbandwidthisapproximatelyequaltothegain-bandwidthproduct(GBP)dividedbythegain(AV).
Forgainsgreaterthan5,AVsetstheclosed-loopbandwidthoftheLMH6609.
(2)ForGainslessthan5,refertothefrequencyresponseplotstodeterminemaximumbandwidth.
Forlargesignalbandwidththeslewrateisamoreaccuratepredictorofbandwidth.
(3)WherefMAX=bandwidth,SR=SlewrateandVP=peakamplitude.
OUTPUTDRIVEANDSETTLINGTIMEPERFORMANCETheLMH6609haslargeoutputcurrentcapability.
The100mAofoutputcurrentmakestheLMH6609anexcellentchoiceforapplicationssuchas:VideoLineDriversDistributionAmplifiersWhendrivingacapacitiveloadorcoaxialcable,includeaseriesresistanceROUTtobackmatchorimprovesettlingtime.
RefertotheDrivingCapacitiveLoadssectionforguidanceonselectinganoutputresistorfordrivingcapacitiveloads.
Copyright2004–2011,TexasInstrumentsIncorporatedSubmitDocumentationFeedback13ProductFolderLinks:LMH6609LMH6609SNOSA84E–MAY2004–REVISEDJANUARY2011www.
ti.
comEVALUATIONBOARDSNationalSemiconductoroffersthefollowingevaluationboardsasaguideforhighfrequencylayoutandasanaidindevicetestingandcharacterization.
Manyofthedatasheetplotsweremeasuredwiththeseboards.
DevicePackageBoardPart#LMH6609MASOICLMH730227LMH6609MFSOT-23LMH730216SeetheLMH6609ProductFolderonwww.
national.
comforevaluationboardavailabilityandorderinginformation.
CIRCUITLAYOUTCONSIDERATIONAproperprintedcircuitlayoutisessentialforachievinghighfrequencyperformance.
NationalprovidesevaluationboardsfortheLMH6609asshownabove.
Theseboardswerelaidoutforoptimum,high-speedperformance.
Thegroundplanewasremovedneartheinputandoutputpinstoreduceparasiticcapacitance.
Also,alltracelengthswereminimizedtoreduceseriesinductances.
Supplybypassingisrequiredfortheamplifiersperformance.
Thebypasscapacitorsprovidealowimpedancereturncurrentpathatthesupplypins.
Theyalsoprovidehighfrequencyfilteringonthepowersupplytraces.
10μFtantalumand.
01μFcapacitorsarerecommendedonbothsupplies(fromsupplytoground).
Inaddition,a0.
1μFceramiccapacitorcanbeaddedfromV+toVtoaidinsecondharmonicsuppression.
Figure36.
DrivingCapacitiveLoadswithROUTforImprovedStabilityDRIVINGCAPACITIVELOADSCapacitiveoutputloadingapplicationswillbenefitfromtheuseofaseriesoutputresistorROUT.
Figure36showstheuseofaseriesoutputresistor,ROUTasitmightbeappliedwhendrivingananalogtodigitalconverter.
Thecharts"SuggestedROvs.
CapLoad"intheTypicalPerformanceSectiongivearecommendedvalueformitigatingcapacitiveloads.
Thevaluessuggestedinthechartsareselectedfor.
5dBorlessofpeakinginthefrequencyresponse.
Thisgivesagoodcompromisebetweensettlingtimeandbandwidth.
Forapplicationswheremaximumfrequencyresponseisneededandsomepeakingistolerable,thevalueofROcanbereducedslightlyfromtherecommendedvalues.
Therewillbeamplitudelostintheseriesresistorunlessthegainisadjustedtocompensate;thiseffectismostnoticeablewithheavyresistiveloads.
14SubmitDocumentationFeedbackCopyright2004–2011,TexasInstrumentsIncorporatedProductFolderLinks:LMH6609LMH6609www.
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comSNOSA84E–MAY2004–REVISEDJANUARY2011COMPONENTSELECTIONANDFEEDBACKRESISTORSurfacemountcomponentsarehighlyrecommendedfortheLMH6609.
Leadedcomponentswillintroduceunpredictableparasiticloadingthatwillinterferewithproperdeviceoperation.
Donotusewirewoundresistors.
TheLMH6609operatesbestwithafeedbackresistorofapproximately250forallgainsof+2andgreaterandfor1andless.
Withlowergainsinparticular,largevaluefeedbackresistorswillexaggeratetheeffectsofparasiticcapacitancesandmayleadtoringingonthepulseresponseandfrequencyresponsepeaking.
Largevalueresistorsalsoaddundesirablethermalnoise.
Feedbackresistorsthataremuchbelow100willloadtheoutputstage,whichwillreducevoltageoutputswing,increasedevicepowerdissipation,increasedistortionandreducecurrentavailablefordrivingtheload.
Inthebufferconfigurationtheoutputshouldbeshorteddirectlytotheinvertinginput.
Thisfeedbackdoesnotloadtheoutputstagebecausetheinvertinginputisahighimpedancepointandthereisnogainsetresistortoground.
OPTIMIZINGDCACCURACYTheLMH6609offersexcellentDCaccuracy.
Thewell-matchedinputsofthisamplifierallowsevenbetterperformanceifcareistakentobalancetheimpedancesseenbythetwoinputs.
TheparallelcombinationofthegainsettingRGandfeedbackRFresistorsshouldbeequaltoRSEQ,theresistanceofthesourcedrivingtheopampinparallelwithanyterminatingResistor(SeeFigure32).
Combiningthiswiththenoninvertinggainequationgivesthefollowingparameters:RF=AVRSEQRG=RF/(AV1)ForInvertinggainsthebiascurrentcancellationisaccomplishedbyplacingaresistorRBonthenon-invertinginputequalinvaluetotheresistanceseenbytheinvertinginput(SeeFigure33).
RB=RF||(RG+RS)TheadditionalnoisecontributionofRBcanbeminimizedbytheuseofashuntcapacitor(notshown).
POWERDISSIPATIONTheLMH6609hastheabilitytodrivelargecurrentsintolowimpedanceloads.
Somecombinationsofambienttemperatureanddeviceloadingcouldresultindeviceoverheating.
FormostconditionspeakpowervaluesarenotasimportantasRMSpowers.
TodeterminethemaximumallowablepowerdissipationfortheLMH6609usethefollowingformula:PMAX=(150-TAMB)/θJA(4)WhereTAMB=Ambienttemperature(°C)andθJA=Thermalresistance,fromjunctiontoambient,foragivenpackage(°C/W).
FortheSOICpackageθJAis148°C/W,fortheSOTitis250°C/W.
150Cistheabsolutemaximumlimitfortheinternaltemperatureofthedevice.
EitherforcedaircoolingoraheatsinkcangreatlyincreasethepowerhandlingcapabilityfortheLMH6609.
VIDEOPERFORMANCETheLMH6609hasbeendesignedtoprovidegoodperformancewithbothPALandNTSCcompositevideosignals.
TheLMH6609isspecifiedforPALsignals.
NTSCperformanceistypicallymarginallybetterduetothelowerfrequencycontentofthesignal.
Performancedegradesastheloadingisincreased,thereforebestperformancewillbeobtainedwithback-terminatedloads.
Thebackterminationreducesreflectionsfromthetransmissionlineandeffectivelymaskstransmissionlineandotherparasiticcapacitancesfromtheamplifieroutputstage.
Thismeansthatthedeviceshouldbeconfiguredforagainof2inordertohaveanetgainof1aftertheterminatingresistor.
(SeeFigure37)Copyright2004–2011,TexasInstrumentsIncorporatedSubmitDocumentationFeedback15ProductFolderLinks:LMH6609LMH6609SNOSA84E–MAY2004–REVISEDJANUARY2011www.
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comFigure37.
TypicalVideoApplicationESDPROTECTIONTheLMH6609isprotectedagainstelectrostaticdischarge(ESD)onallpins.
TheLMH6609willsurvive2000VHumanBodymodelor200VMachinemodelevents.
UnderclosedloopoperationtheESDdiodeshavenoeffectoncircuitperformance.
Thereareoccasions,however,whentheESDdiodesmaybeevident.
Forinstance,iftheamplifierispowereddownandalargeinputsignalisappliedtheESDdiodeswillconduct.
TRANSIMPEDANCEAMPLIFIERThelowinputcurrentnoiseandunitygainstabilityoftheLMH6609makeitanexcellentchoicefortransimpedanceapplications.
Figure38illustratesalownoisetransimpedanceamplifierthatiscommonlyimplementedwithphotodiodes.
RFsetsthetransimpedancegain.
ThephotodiodecurrentmultipliedbyRFdeterminestheoutputvoltage.
Figure38.
TransimpedanceAmplifierThecapacitancesaredefinedas:CD=EquivalentDiodeCapacitanceCF=FeedbackCapacitanceThefeedbackcapacitorisusedtogiveoptimumflatnessandstability.
AsastartingpointthefeedbackcapacitanceshouldbechosenasoftheDiodecapacitance.
Lowerfeedbackcapacitorswillpeakfrequencyresponse.
16SubmitDocumentationFeedbackCopyright2004–2011,TexasInstrumentsIncorporatedProductFolderLinks:LMH6609LMH6609www.
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comSNOSA84E–MAY2004–REVISEDJANUARY2011RectifierThelargebandwidthoftheLMH6609allowsforhigh-speedrectification.
AcommonrectifiertopologyisshowninFigure39.
R1andR2setthegainoftherectifier.
Figure39.
RectifierTopologyCopyright2004–2011,TexasInstrumentsIncorporatedSubmitDocumentationFeedback17ProductFolderLinks:LMH6609PACKAGEOPTIONADDENDUMwww.
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com9-Mar-2013Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Lead/BallFinishMSLPeakTemp(3)OpTemp(°C)Top-SideMarkings(4)SamplesLMH6609MAACTIVESOICD895TBDCallTICallTI-40to85LMH6609MALMH6609MA/NOPBACTIVESOICD895Green(RoHS&noSb/Br)CUSNLevel-1-260C-UNLIM-40to85LMH6609MALMH6609MAXACTIVESOICD82500TBDCallTICallTI-40to85LMH6609MALMH6609MAX/NOPBACTIVESOICD82500Green(RoHS&noSb/Br)CUSNLevel-1-260C-UNLIM-40to85LMH6609MALMH6609MFACTIVESOT-23DBV51000TBDCallTICallTI-40to85A89ALMH6609MF/NOPBACTIVESOT-23DBV51000Green(RoHS&noSb/Br)CUSNLevel-1-260C-UNLIM-40to85A89ALMH6609MFXACTIVESOT-23DBV53000TBDCallTICallTI-40to85A89ALMH6609MFX/NOPBACTIVESOT-23DBV53000Green(RoHS&noSb/Br)CUSNLevel-1-260C-UNLIM-40to85A89A(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheckhttp://www.
ti.
com/productcontentforthelatestavailabilityinformationandadditionalproductcontentdetails.
TBD:ThePb-Free/Greenconversionplanhasnotbeendefined.
Pb-Free(RoHS):TI'sterms"Lead-Free"or"Pb-Free"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirementsforall6substances,includingtherequirementthatleadnotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses.
Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieandpackage,or2)lead-baseddieadhesiveusedbetweenthedieandleadframe.
ThecomponentisotherwiseconsideredPb-Free(RoHScompatible)asdefinedabove.
Green(RoHS&noSb/Br):TIdefines"Green"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflameretardants(BrorSbdonotexceed0.
1%byweightinhomogeneousmaterial)(3)MSL,PeakTemp.
--TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclassifications,andpeaksoldertemperature.
(4)Onlyoneofmarkingsshownwithinthebracketswillappearonthephysicaldevice.
PACKAGEOPTIONADDENDUMwww.
ti.
com9-Mar-2013Addendum-Page2ImportantInformationandDisclaimer:TheinformationprovidedonthispagerepresentsTI'sknowledgeandbeliefasofthedatethatitisprovided.
TIbasesitsknowledgeandbeliefoninformationprovidedbythirdparties,andmakesnorepresentationorwarrantyastotheaccuracyofsuchinformation.
Effortsareunderwaytobetterintegrateinformationfromthirdparties.
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TAPEANDREELINFORMATION*AlldimensionsarenominalDevicePackageTypePackageDrawingPinsSPQReelDiameter(mm)ReelWidthW1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W(mm)Pin1QuadrantLMH6609MAXSOICD82500330.
012.
46.
55.
42.
08.
012.
0Q1LMH6609MAX/NOPBSOICD82500330.
012.
46.
55.
42.
08.
012.
0Q1LMH6609MFSOT-23DBV51000178.
08.
43.
23.
21.
44.
08.
0Q3LMH6609MF/NOPBSOT-23DBV51000178.
08.
43.
23.
21.
44.
08.
0Q3LMH6609MFXSOT-23DBV53000178.
08.
43.
23.
21.
44.
08.
0Q3LMH6609MFX/NOPBSOT-23DBV53000178.
08.
43.
23.
21.
44.
08.
0Q3PACKAGEMATERIALSINFORMATIONwww.
ti.
com16-Nov-2012PackMaterials-Page1*AlldimensionsarenominalDevicePackageTypePackageDrawingPinsSPQLength(mm)Width(mm)Height(mm)LMH6609MAXSOICD82500349.
0337.
045.
0LMH6609MAX/NOPBSOICD82500349.
0337.
045.
0LMH6609MFSOT-23DBV51000203.
0190.
041.
0LMH6609MF/NOPBSOT-23DBV51000203.
0190.
041.
0LMH6609MFXSOT-23DBV53000206.
0191.
090.
0LMH6609MFX/NOPBSOT-23DBV53000206.
0191.
090.
0PACKAGEMATERIALSINFORMATIONwww.
ti.
com16-Nov-2012PackMaterials-Page2IMPORTANTNOTICETexasInstrumentsIncorporatedanditssubsidiaries(TI)reservetherighttomakecorrections,enhancements,improvementsandotherchangestoitssemiconductorproductsandservicesperJESD46,latestissue,andtodiscontinueanyproductorserviceperJESD48,latestissue.
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