implementedwww

FeaturesFastReadAccessTime–150nsAutomaticPageWriteOperation–InternalAddressandDataLatchesfor64BytesFastWriteCycleTimes–PageWriteCycleTime:10msMaximum(Standard)2msMaximum(Option–Ref.
AT28HC64BFDatasheet)–1to64-bytePageWriteOperationLowPowerDissipation–40mAActiveCurrent–100ACMOSStandbyCurrentHardwareandSoftwareDataProtectionDATAPollingandToggleBitforEndofWriteDetectionHighReliabilityCMOSTechnology–Endurance:100,000Cycles–DataRetention:10YearsSingle5V±10%SupplyCMOSandTTLCompatibleInputsandOutputsJEDECApprovedByte-widePinoutIndustrialTemperatureRangesGreen(Pb/Halide-free)PackagingOption1.
DescriptionTheAT28C64Bisahigh-performanceelectrically-erasableandprogrammableread-onlymemory(EEPROM).
Its64Kofmemoryisorganizedas8,192wordsby8bits.
ManufacturedwithAtmel'sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipationofjust220mW.
Whenthedeviceisdeselected,theCMOSstandbycurrentislessthan100A.
TheAT28C64BisaccessedlikeaStaticRAMforthereadorwritecyclewithouttheneedforexternalcomponents.
Thedevicecontainsa64-bytepageregistertoallowwritingofupto64bytessimultaneously.
Duringawritecycle,theaddressesand1to64bytesofdataareinternallylatched,freeingtheaddressanddatabusforotheroperations.
Followingtheinitiationofawritecycle,thedevicewillautomaticallywritethelatcheddatausinganinternalcontroltimer.
TheendofawritecyclecanbedetectedbyDATAPOLLINGofI/O7.
Oncetheendofawritecyclehasbeendetected,anewaccessforareadorwritecanbegin.
Atmel'sAT28C64Bhasadditionalfeaturestoensurehighqualityandmanufacturabil-ity.
Thedeviceutilizesinternalerrorcorrectionforextendedenduranceandimproveddataretentioncharacteristics.
Anoptionalsoftwaredataprotectionmechanismisavailabletoguardagainstinadvertentwrites.
Thedevicealsoincludesanextra64bytesofEEPROMfordeviceidentificationortracking.
64K(8Kx8)ParallelEEPROMwithPageWriteandSoftwareDataProtectionAT28C64B0270K–PEEPR–10/0620270K–PEEPR–10/06AT28C64B2.
PinConfigurations2.
128-leadPDIP,28-leadSOICTopViewPinNameFunctionA0-A12AddressesCEChipEnableOEOutputEnableWEWriteEnableI/O0-I/O7DataInputs/OutputsNCNoConnectDCDon'tConnect12345678910111213142827262524232221201918171615NCA12A7A6A5A4A3A2A1A0I/O0I/O1I/O2GNDVCCWENCA8A9A11OEA10CEI/O7I/O6I/O5I/O4I/O32.
232-leadPLCCTopViewNote:PLCCpackagepins1and17areDon'tConnect.
2.
328-leadTSOPTopView5678910111213292827262524232221A6A5A4A3A2A1A0NCI/O0A8A9A11NCOEA10CEI/O7I/O6432132313014151617181920I/O1I/O2GNDDCI/O3I/O4I/O5A7A12NCDCVCCWENC12345678910111213142827262524232221201918171615OEA11A9A8NCWEVCCNCA12A7A6A5A4A3A10CEI/O7I/O6I/O5I/O4I/O3GNDI/O2I/O1I/O0A0A1A230270K–PEEPR–10/06AT28C64B3.
BlockDiagram4.
DeviceOperation4.
1ReadTheAT28C64BisaccessedlikeaStaticRAM.
WhenCEandOEarelowandWEishigh,thedatastoredatthememorylocationdeterminedbytheaddresspinsisassertedontheoutputs.
Theoutputsareputinthehigh-impedancestatewheneitherCEorOEishigh.
Thisduallinecontrolgivesdesignersflexibilityinpreventingbuscontentionintheirsystems.
4.
2ByteWriteAlowpulseontheWEorCEinputwithCEorWElow(respectively)andOEhighinitiatesawritecycle.
TheaddressislatchedonthefallingedgeofCEorWE,whicheveroccurslast.
ThedataislatchedbythefirstrisingedgeofCEorWE.
Onceabytewritehasbeenstarted,itwillautomaticallytimeitselftocompletion.
OnceaprogrammingoperationhasbeeninitiatedandforthedurationoftWC,areadoperationwilleffectivelybeapollingoperation.
4.
3PageWriteThepagewriteoperationoftheAT28C64Ballows1to64bytesofdatatobewrittenintothedeviceduringasingleinternalprogrammingperiod.
Apagewriteoperationisinitiatedinthesamemannerasabytewrite;afterthefirstbyteiswritten,itcanthenbefollowedby1to63additionalbytes.
Eachsuccessivebytemustbeloadedwithin150s(tBLC)ofthepreviousbyte.
IfthetBLClimitisexceeded,theAT28C64Bwillceaseacceptingdataandcommencetheinternalprogrammingoperation.
AllbytesduringapagewriteoperationmustresideonthesamepageasdefinedbythestateoftheA6toA12inputs.
ForeachWEhightolowtransitionduringthepagewriteoperation,A6toA12mustbethesame.
TheA0toA5inputsspecifywhichbyteswithinthepagearetobewritten.
Thebytesmaybeloadedinanyorderandmaybealteredwithinthesameloadperiod.
Onlybyteswhicharespecifiedforwritingwillbewritten;unnecessarycyclingofotherbyteswithinthepagedoesnotoccur.
VCCGNDOEWECEADDRESSINPUTSXDECODERYDECODEROE,CEandWELOGICDATAINPUTS/OUTPUTSI/O0-I/O7DATALATCHINPUT/OUTPUTBUFFERSY-GATINGCELLMATRIXIDENTIFICATION40270K–PEEPR–10/06AT28C64B4.
4DATAPollingTheAT28C64BfeaturesDATAPollingtoindicatetheendofawritecycle.
DuringabyteorpagewritecycleanattemptedreadofthelastbytewrittenwillresultinthecomplementofthewrittendatatobepresentedonI/O7.
Oncethewritecyclehasbeencompleted,truedataisvalidonalloutputs,andthenextwritecyclemaybegin.
DATAPollingmaybeginatanytimeduringthewritecycle.
4.
5ToggleBitInadditiontoDATAPolling,theAT28C64Bprovidesanothermethodfordeterminingtheendofawritecycle.
Duringthewriteoperation,successiveattemptstoreaddatafromthedevicewillresultinI/O6togglingbetweenoneandzero.
Oncethewritehascompleted,I/O6willstoptog-gling,andvaliddatawillberead.
Togglebitreadingmaybeginatanytimeduringthewritecycle.
4.
6DataProtectionIfprecautionsarenottaken,inadvertentwritesmayoccurduringtransitionsofthehostsystempowersupply.
Atmelhasincorporatedbothhardwareandsoftwarefeaturesthatwillprotectthememoryagainstinadvertentwrites.
4.
6.
1HardwareDataProtectionHardwarefeaturesprotectagainstinadvertentwritestotheAT28C64Binthefollowingways:(a)VCCsense–ifVCCisbelow3.
8V(typical),thewritefunctionisinhibited;(b)VCCpower-ondelay–onceVCChasreached3.
8V,thedevicewillautomaticallytimeout5ms(typical)beforeallowingawrite;(c)writeinhibit–holdinganyoneofOElow,CEhigh,orWEhighinhibitswritecycles;and(d)noisefilter–pulsesoflessthan15ns(typical)ontheWEorCEinputswillnotinitiateawritecycle.
4.
6.
2SoftwareDataProtectionAsoftwarecontrolleddataprotectionfeaturehasbeenimplementedontheAT28C64B.
Whenenabled,thesoftwaredataprotection(SDP),willpreventinadvertentwrites.
TheSDPfeaturemaybeenabledordisabledbytheuser;theAT28C64BisshippedfromAtmelwithSDPdis-abled.
SDPisenabledbytheuserissuingaseriesofthreewritecommandsinwhichthreespecificbytesofdataarewrittentothreespecificaddresses(see"SoftwareDataProtectionAlgo-rithms"onpage10).
Afterwritingthe3-bytecommandsequenceandwaitingtWC,theentireAT28C64Bwillbeprotectedagainstinadvertentwrites.
ItshouldbenotedthatevenafterSDPisenabled,theusermaystillperformabyteorpagewritetotheAT28C64Bbyprecedingthedatatobewrittenbythesame3-bytecommandsequenceusedtoenableSDP.
Onceset,SDPremainsactiveunlessthedisablecommandsequenceisissued.
Powertransi-tionsdonotdisableSDP,andSDPprotectstheAT28C64Bduringpower-upandpower-downconditions.
Allcommandsequencesmustconformtothepagewritetimingspecifications.
Thedataintheenableanddisablecommandsequencesisnotactuallywrittenintothedevice;theiraddressesmaystillbewrittenwithuserdataineitherabyteorpagewriteoperation.
AftersettingSDP,anyattempttowritetothedevicewithoutthe3-bytecommandsequencewillstarttheinternalwritetimers.
Nodatawillbewrittentothedevice.
However,forthedura-tionoftWC,readoperationswilleffectivelybepollingoperations.
4.
7DeviceIdentificationAnextra64bytesofEEPROMmemoryareavailabletotheuserfordeviceidentification.
ByraisingA9to12V±0.
5Vandusingaddresslocations1FC0Hto1FFFH,theadditionalbytesmaybewrittentoorreadfrominthesamemannerastheregularmemoryarray.
50270K–PEEPR–10/06AT28C64BNotes:1.
XcanbeVILorVIH.
2.
See"ACWriteWaveforms"onpage8.
3.
VH=12.
0V±0.
5V.
5.
DCandACOperatingRangeAT28C64B-15OperatingTemperature(Case)-40°C-85°CVCCPowerSupply5V±10%6.
OperatingModesModeCEOEWEI/OReadVILVILVIHDOUTWrite(2)VILVIHVILDINStandby/WriteInhibitVIHX(1)XHighZWriteInhibitXXVIHWriteInhibitXVILXOutputDisableXVIHXHighZChipEraseVILVH(3)VILHighZ7.
AbsoluteMaximumRatings*TemperatureUnderBias.
55°Cto+125°C*NOTICE:Stressesbeyondthoselistedunder"AbsoluteMaximumRatings"maycausepermanentdam-agetothedevice.
Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.
ExposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectdevicereliabilityStorageTemperature.
65°Cto+150°CAllInputVoltages(includingNCPins)withRespecttoGround0.
6Vto+6.
25VAllOutputVoltageswithRespecttoGround0.
6VtoVCC+0.
6VVoltageonOEandA9withRespecttoGround0.
6Vto+13.
5V8.
DCCharacteristicsSymbolParameterConditionMinMaxUnitsILIInputLoadCurrentVIN=0VtoVCC+1V10AILOOutputLeakageCurrentVI/O=0VtoVCC10AISB1VCCStandbyCurrentCMOSCE=VCC-0.
3VtoVCC+1V100AISB2VCCStandbyCurrentTTLCE=2.
0VtoVCC+1V2mAICCVCCActiveCurrentf=5MHz;IOUT=0mA40mAVILInputLowVoltage0.
8VVIHInputHighVoltage2.
0VVOLOutputLowVoltageIOL=2.
1mA0.
40VVOHOutputHighVoltageIOH=-400A2.
4V60270K–PEEPR–10/06AT28C64B10.
ACReadWaveforms(1)(2)(3)(4)Notes:1.
CEmaybedelayeduptotACC-tCEaftertheaddresstransitionwithoutimpactontACC.
2.
OEmaybedelayeduptotCE-tOEafterthefallingedgeofCEwithoutimpactontCEorbytACC-tOEafteranaddresschangewithoutimpactontACC.
3.
tDFisspecifiedfromOEorCEwhicheveroccursfirst(CL=5pF).
4.
Thisparameterischaracterizedandisnot100%tested.
9.
ACReadCharacteristicsSymbolParameterAT28C64B-15UnitsMinMaxtACCAddresstoOutputDelay150nstCE(1)CEtoOutputDelay150nstOE(2)OEtoOutputDelay070nstDF(3)(4)CEorOEtoOutputFloat050nstOHOutputHoldfromOE,CEorAddress,whicheveroccurredfirst0nstCEtOEtACCtDFtOHOECEADDRESSOUTPUTOUTPUTVALIDADDRESSVALIDHIGHZ70270K–PEEPR–10/06AT28C64B11.
InputTestWaveformsandMeasurementLevel12.
OutputTestLoadNote:1.
Thisparameterischaracterizedandisnot100%tested.
tR,tFinCapacitancef=1MHz,T=25°C(1)SymbolTypMaxUnitsConditionsCIN46pFVIN=0VCOUT812pFVOUT=0V80270K–PEEPR–10/06AT28C64B15.
ACWriteWaveforms15.
1WEControlled15.
2CEControlled14.
ACWriteCharacteristicsSymbolParameterMinMaxUnitstAS,tOESAddress,OESetupTime0nstAHAddressHoldTime50nstCSChipSelectSetupTime0nstCHChipSelectHoldTime0nstWPWritePulseWidth(WEorCE)100nstDSDataSetupTime50nstDH,tOEHData,OEHoldTime0nsOEWECEADDRESSDATAINtCStOEStAStDHtOEHtAHtWPtDStCHOEWECEADDRESSDATAINtCStOEStAStDHtOEHtAHtWPtDStCH90270K–PEEPR–10/06AT28C64B17.
PageModeWriteWaveforms(1)(2)Notes:1.
A6throughA12mustspecifythesamepageaddressduringeachhightolowtransitionofWE(orCE).
2.
OEmustbehighonlywhenWEandCEarebothlow.
18.
ChipEraseWaveformstS=tH=1s(min.
)tW=10ms(min.
)VH=12.
0V±0.
5V16.
PageModeCharacteristicsSymbolParameterMinMaxUnitstWCWriteCycleTime10mstWCWriteCycleTime(optionavailable–Ref.
AT28HC64BFdatasheet)2mstASAddressSetupTime0nstAHAddressHoldTime50nstDSDataSetupTime50nstDHDataHoldTime0nstWPWritePulseWidth100nstBLCByteLoadCycleTime150stWPHWritePulseWidthHigh50nsOEWECEA0-A12DATAtASVALIDADDVALIDDATAtAHtDStWPtWPHtDHtBLCtWCtStWtH100270K–PEEPR–10/06AT28C64B19.
SoftwareDataProtectionEnableAlgorithm(1)Notes:1.
DataFormat:I/O7-I/O0(Hex);AddressFormat:A12-A0(Hex).
2.
WriteProtectstatewillbeactivatedatendofwriteevenifnootherdataisloaded.
3.
WriteProtectstatewillbedeactivatedatendofwriteperiodevenifnootherdataisloaded.
4.
1to64bytesofdataareloaded.
LOADDATAAATOADDRESS1555LOADDATA55TOADDRESS0AAALOADDATAA0TOADDRESS1555LOADDATAXXTOANYADDRESS(4)LOADLASTBYTETOLASTADDRESSENTERDATAPROTECTSTATEWRITESENABLED(2)20.
SoftwareDataProtectionDisableAlgorithm(1)Notes:1.
DataFormat:I/O7-I/O0(Hex);AddressFormat:A12-A0(Hex).
2.
WriteProtectstatewillbeactivatedatendofwriteevenifnootherdataisloaded.
3.
WriteProtectstatewillbedeactivatedatendofwriteperiodevenifnootherdataisloaded.
4.
1to64bytesofdataareloaded.
LOADDATAAATOADDRESS1555LOADDATA55TOADDRESS0AAALOADDATA80TOADDRESS1555LOADDATAAATOADDRESS1555LOADDATA20TOADDRESS1555LOADDATAXXTOANYADDRESS(4)LOADLASTBYTETOLASTADDRESSLOADDATA55TOADDRESS0AAAEXITDATAPROTECTSTATE(3)21.
SoftwareProtectedWriteCycleWaveforms(1)(2)Notes:1.
A6throughA12mustspecifythesamepageaddressduringeachhightolowtransitionofWE(orCE)afterthesoftwarecodehasbeenentered.
2.
OEmustbehighonlywhenWEandCEarebothlow.
OEWECEA6-A12DATAA0-A5tAStAHtDStDHtWPtWPHtBLCtWC110270K–PEEPR–10/06AT28C64BNotes:1.
Theseparametersarecharacterizedandnot100%tested.
See"ACReadCharacteristics"onpage6.
23.
DataPollingWaveformsNotes:1.
Theseparametersarecharacterizedandnot100%tested.
2.
See"ACReadCharacteristics"onpage6.
25.
ToggleBitWaveforms(1)(2)(3)Notes:1.
TogglingeitherOEorCEorbothOEandCEwilloperatetogglebit.
2.
BeginningandendingstateofI/O6willvary.
3.
Anyaddresslocationmaybeusedbuttheaddressshouldnotvary.
22.
DataPollingCharacteristics(1)SymbolParameterMinTypMaxUnitstDHDataHoldTime0nstOEHOEHoldTime0nstOEOEtoOutputDelay(1)nstWRWriteRecoveryTime0ns24.
ToggleBitCharacteristics(1)SymbolParameterMinTypMaxUnitstDHDataHoldTime10nstOEHOEHoldTime10nstOEOEtoOutputDelay(2)nstOEHPOEHighPulse150nstWRWriteRecoveryTime0nstDHtOEtOEHtWRtDHtWRtOEtOEHtOEHP120270K–PEEPR–10/06AT28C64B26.
NormalizedICCGraphs130270K–PEEPR–10/06AT28C64B27.
OrderingInformation(1)Note:1.
See"ValidPartNumbers"onpage13.
27.
1StandardPackagetACC(ns)ICC(mA)OrderingCodePackageOperationRangeActiveStandby150400.
1AT28C64B-15JIAT28C64B-15PIAT28C64B-15SIAT28C64B-15TI32J28P628S28TIndustrial(-40°Cto85°C)27.
2GreenPackageOption(Pb/Halide-free)tACC(ns)ICC(mA)OrderingCodePackageOperationRangeActiveStandby150400.
1AT28C64B-15JUAT28C64B-15SUAT28C64B-15TUAT28C64B-15PU32J28S28T28P6Industrial(-40°Cto85°C)28.
ValidPartNumbersThefollowingtablelistsstandardAtmelproductsthatcanbeordered.
DeviceNumbersSpeedPackageandTemperatureCombinationsAT28C64B15JI,JU,PI,SI,SU,TI,TU,PU29.
DieProductsReferenceSection:ParallelEEPROMDieProductsPackageType32J32-lead,PlasticJ-leadedChipCarrier(PLCC)28P628-lead,0.
600"Wide,PlasticDualInlinePackage(PDIP)28S28-lead,0.
300"Wide,PlasticGullWingSmallOutline(SOIC)28T28-lead,PlasticThinSmallOutlinePackage(TSOP)140270K–PEEPR–10/06AT28C64B30.
PackagingInformation30.
132J–PLCCDRAWINGNO.
REV.
2325OrchardParkwaySanJose,CA95131RTITLE32J,32-lead,PlasticJ-leadedChipCarrier(PLCC)B32J10/04/011.
14(0.
045)X45PINNO.
1IDENTIFIER1.
14(0.
045)X450.
51(0.
020)MAX0.
318(0.
0125)0.
191(0.
0075)A245MAX(3X)AA1B1E2BeE1ED1DD2COMMONDIMENSIONS(UnitofMeasure=mm)SYMBOLMINNOMMAXNOTENotes:1.
ThispackageconformstoJEDECreferenceMS-016,VariationAE.
2.
DimensionsD1andE1donotincludemoldprotrusion.
Allowableprotrusionis.
010"(0.
254mm)perside.
DimensionD1andE1includemoldmismatchandaremeasuredattheextremematerialconditionattheupperorlowerpartingline.
3.
Leadcoplanarityis0.
004"(0.
102mm)maximum.
A3.
175–3.
556A11.
524–2.
413A20.
381––D12.
319–12.
573D111.
354–11.
506Note2D29.
906–10.
922E14.
859–15.
113E113.
894–14.
046Note2E212.
471–13.
487B0.
660–0.
813B10.
330–0.
533e1.
270TYP150270K–PEEPR–10/06AT28C64B30.
228P6–PDIP2325OrchardParkwaySanJose,CA95131TITLEDRAWINGNO.
RREV.
28P6,28-lead(0.
600"/15.
24mmWide)PlasticDualInlinePackage(PDIP)B28P609/28/01PIN1E1A1BREFEB1CLSEATINGPLANEA0~15DeeBCOMMONDIMENSIONS(UnitofMeasure=mm)SYMBOLMINNOMMAXNOTEA––4.
826A10.
381––D36.
703–37.
338Note2E15.
240–15.
875E113.
462–13.
970Note2B0.
356–0.
559B11.
041–1.
651L3.
048–3.
556C0.
203–0.
381eB15.
494–17.
526e2.
540TYPNotes:1.
ThispackageconformstoJEDECreferenceMS-011,VariationAB.
2.
DimensionsDandE1donotincludemoldFlashorProtrusion.
MoldFlashorProtrusionshallnotexceed0.
25mm(0.
010").
160270K–PEEPR–10/06AT28C64B30.
328S–SOIC2325OrchardParkwaySanJose,CA95131TITLEDRAWINGNO.
RREV.
28S,28-lead,0.
300"Body,PlasticGullWingSmallOutline(SOIC)JEDECStandardMS-013B28S8/4/03DimensionsinMillimetersand(Inches).
Controllingdimension:Millimeters.
TOPVIEWSIDEVIEWS0.
51(0.
020)0.
33(0.
013)7.
60(0.
2992)7.
40(0.
2914)10.
65(0.
419)10.
00(0.
394)1.
27(0.
50)BSC2.
65(0.
1043)2.
35(0.
0926)18.
10(0.
7125)17.
70(0.
6969)0.
30(0.
0118)0.
10(0.
0040)0.
32(0.
0125)0.
23(0.
0091)1.
27(0.
050)0.
40(0.
016)0~8PIN1170270K–PEEPR–10/06AT28C64B30.
428T–TSOP2325OrchardParkwaySanJose,CA95131TITLEDRAWINGNO.
RREV.
28T,28-lead(8x13.
4mm)PlasticThinSmallOutlinePackage,TypeI(TSOP)C28T12/06/02PIN10~5D1DPin1IdentifierAreabeEAA1A2cLGAGEPLANESEATINGPLANEL1COMMONDIMENSIONS(UnitofMeasure=mm)SYMBOLMINNOMMAXNOTENotes:1.
ThispackageconformstoJEDECreferenceMO-183.
2.
DimensionsD1andEdonotincludemoldprotrusion.
AllowableprotrusiononEis0.
15mmpersideandonD1is0.
25mmperside.
3.
Leadcoplanarityis0.
10mmmaximum.
A––1.
20A10.
05–0.
15A20.
901.
001.
05D13.
2013.
4013.
60D111.
7011.
8011.
90Note2E7.
908.
008.
10Note2L0.
500.
600.
70L10.
25BASICb0.
170.
220.
27c0.
10–0.
21e0.
55BASICPrintedonrecycledpaper.
0270K–PEEPR–10/06Disclaimer:TheinformationinthisdocumentisprovidedinconnectionwithAtmelproducts.
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