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QSD123,QSD124—PlasticSiliconInfraredPhototransistorPublicationOrderNumber:QSD123/D2012SemiconductorComponentsIndustries,LLC.
October-2017,Rev.
2QSD123,QSD124PlasticSiliconInfraredPhototransistorFeaturesNPNSiliconPhototransistorPackageType:T-13/4MatchedEmitter:QED12X/QED22X/QED23XNarrowReceptionAngle:24°CDaylightFilterPackageMaterialandColor:BlackEpoxyHighSensitivityDescriptionTheQSD123/124isaphototransistorencapsulatedinaninfraredtransparent,blackT-13/4package.
PackageDimensions0.
195(4.
95)0.
040(1.
02)NOM0.
305(7.
75)0.
240(6.
10)0.
215(5.
45)0.
020(0.
51)SQ.
(2X)REFERENCESURFACECOLLECTOR0.
800(20.
3)MIN0.
100(2.
54)NOM0.
500(1.
25)EMITTERCOLLECTOREMITTERNotes:1.
Dimensionsforalldrawingsareininches(mm).
2.
Toleranceof±0.
010(0.
25)onallnon-nominaldimensionsunlessotherwisespecified.
Schematicwww.
onsemi.
com2QSD123,QSD124—PlasticSiliconInfraredPhototransistorAbsoluteMaximumRatings(TA=25°Cunlessotherwisespecied)Stressesexceedingtheabsolutemaximumratingsmaydamagethedevice.
Thedevicemaynotfunctionorbeoperableabovetherecommendedoperatingconditionsandstressingthepartstotheselevelsisnotrecommended.
Inaddition,extendedexposuretostressesabovetherecommendedoperatingconditionsmayaffectdevicereliability.
Theabsolutemaximumratingsarestressratingsonly.
Notes:1.
Deratepowerdissipationlinearly1.
33mW/°Cabove25°C.
2.
RMAfluxisrecommended.
3.
Methanolorisopropylalcoholsarerecommendedascleaningagents.
4.
Solderingiron1/16"(1.
6mm)minimumfromhousing.
5.
λ=880nm,AlGaAs.
Electrical/OpticalCharacteristics(TA=25°C)SymbolParameterRatingUnitTOPROperatingTemperature-40to+100°CTSTGStorageTemperature-40to+100°CTSOL-ISolderingTemperature(Iron)(2,3,4)240for5sec°CTSOL-FSolderingTemperature(Flow)(2,3)260for10sec°CVCECollector-EmitterVoltage30VVECEmitter-CollectorVoltage5VPDPowerDissipation(1)100mWSymbolParameterTestConditionsMin.
Typ.
Max.
UnitsλPSPeakSensitivityWavelength880nmΘReceptionAngle±12°ICEOCollector-EmitterDarkCurrentVCE=10V,Ee=0100nABVCEOCollector-EmitterBreakdownIC=1mA30VBVECOEmitter-CollectorBreakdownIE=100A5VIC(ON)On-StateCollectorCurrent(5)QSD123QSD124Ee=0.
5mW/cm2,VCE=5V46mAmAVCE(SAT)SaturationVoltage(5)Ee=0.
5mW/cm2,IC=0.
5mA0.
4VtrRiseTimeVCC=5V,RL=100Ω,IC=0.
2mA7stfFallTime7s2916QSD123,QSD124—PlasticSiliconInfraredPhototransistorTypicalPerformanceCharacteristicsFigure1.
LightCurrentvs.
RadiantIntensityFigure3.
DarkCurrentvs.
Collector-EmitterVoltageFigure5.
DarkCurrentvs.
AmbientTemperatureFigure2.
AngularResponseCurve0.
00.
20.
40.
60.
81.
00.
20.
40.
60.
81.
00102030405060708090100110120130140150160170180Figure4.
LightCurrentvs.
Collector-EmitterVoltageVCE-Collector-EmitterVoltage(V)0.
1110IL-NormalizedLightCurrent10-310-210-1100101Ee-RadiantIntensity(mW/cm2)0.
00.
20.
40.
60.
81.
0IC(ON)-LightCurrent(mA)0.
1110100Normalizedto:VCE=5VIe=0.
5mW/cmTA=25oC2Ie=0.
1mW/cm2Ie=0.
2mW/cm2Ie=0.
5mW/cm2Ie=1mW/cm2TA-AmbientTemperature(oC)-40-20020406080100ICEO-NormalizedDarkCurrent10-1100101102103104VCE=25VVCE=10VNormalizedto:VCE=25VTA=25oCVCE-Collector-EmitterVoltage(V)051015202530ICEO-DarkCurrent(nA)10-310-210-1100101www.
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