qualifiedwww.168dy.com

VishaySiliconixSiR168DPDocumentNumber:65039S09-1823-Rev.
A,14-Sep-09www.
vishay.
com1N-Channel30-V(D-S)MOSFETFEATURESHalogen-freeAccordingtoIEC61249-2-21DefinitionTrenchFETPowerMOSFET100%RgTested100%UISTestedComplianttoRoHSDirective2002/95/ECAPPLICATIONSLow-SideSwitchNotebookDC/DCPRODUCTSUMMARYVDS(V)RDS(on)(Ω)ID(A)aQg(Typ.
)300.
0044atVGS=10V4024.
5nC0.
0059atVGS=4.
5V4012345678SSSGDDDD6.
15mm5.
15mmPowerPAKSO-8BottomViewOrderingInformation:SiR168DP-T1-GE3(Lead(Pb)-freeandHalogen-free)N-ChannelMOSFETGDSNotes:a.
BasedonTC=25°C.
Packagelimited.
b.
SurfaceMountedon1"x1"FR4board.
c.
t=10s.
d.
SeeSolderProfile(www.
vishay.
com/ppg73257).
ThePowerPAKSO-8isaleadlesspackage.
Theendoftheleadterminalisexposedcopper(notplated)asaresultofthesingulationprocessinmanufacturing.
Asolderfilletattheexposedcoppertipcannotbeguaranteedandisnotrequiredtoensureadequatebottomsidesolderinterconnection.
e.
ReworkConditions:manualsolderingwithasolderingironisnotrecommendedforleadlesscomponents.
f.
MaximumunderSteadyStateconditionsis70°C/W.
ABSOLUTEMAXIMUMRATINGSTA=25°C,unlessotherwisenotedParameterSymbolLimitUnitDrain-SourceVoltageVDS30VGate-SourceVoltageVGS±20ContinuousDrainCurrent(TJ=150°C)TC=25°CID40aATC=70°C40aTA=25°C25.
1b,cTA=70°C20.
1b,cPulsedDrainCurrentIDM70AvalancheCurrentL=0.
1mHIAS30AvalancheEnergyEAS45mJContinuousSource-DrainDiodeCurrentTC=25°CIS40aATA=25°C4.
1b,cMaximumPowerDissipationTC=25°CPD34.
7WTC=70°C22.
2TA=25°C5b,cTA=70°C3.
2b,cOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CSolderingRecommendations(PeakTemperature)d,e260THERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitMaximumJunction-to-Ambientb,ft≤10sRthJA2025°C/WMaximumJunction-to-Case(Drain)SteadyStateRthJC3.
13.
6www.
vishay.
com2DocumentNumber:65039S09-1823-Rev.
A,14-Sep-09VishaySiliconixSiR168DPNotes:a.
Pulsetest;pulsewidth≤300s,dutycycle≤2%.
b.
Guaranteedbydesign,notsubjecttoproductiontesting.
Stressesbeyondthoselistedunder"AbsoluteMaximumRatings"maycausepermanentdamagetothedevice.
Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedintheoperationalsectionsofthespecificationsisnotimplied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectdevicereliability.
SPECIFICATIONSTJ=25°C,unlessotherwisenotedParameterSymbolTestConditionsMin.
Typ.
Max.
UnitStaticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=250A30VVDSTemperatureCoefficientΔVDS/TJID=250A27mV/°CVGS(th)TemperatureCoefficientΔVGS(th)/TJ-5.
8Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=250A1.
22.
4VGate-SourceLeakageIGSSVDS=0V,VGS=±20V±100nAZeroGateVoltageDrainCurrentIDSSVDS=30V,VGS=0V1AVDS=30V,VGS=0V,TJ=55°C5On-StateDrainCurrentaID(on)VDS≥5V,VGS=10V40ADrain-SourceOn-StateResistanceaRDS(on)VGS=10V,ID=15A0.
00350.
0044ΩVGS=4.
5V,ID=10A0.
00470.
0059ForwardTransconductanceagfsVDS=15V,ID=15A63SDynamicbInputCapacitanceCissVDS=15V,VGS=0V,f=1MHz2040pFOutputCapacitanceCoss390ReverseTransferCapacitanceCrss225TotalGateChargeQgVDS=15V,VGS=10V,ID=10A49.
575nCVDS=15V,VGS=4.
5V,ID=10A24.
537Gate-SourceChargeQgs6.
0Gate-DrainChargeQgd8.
8GateResistanceRgf=1MHz0.
20.
81.
6ΩTurn-OnDelayTimetd(on)VDD=15V,RL=1.
5ΩID10A,VGEN=4.
5V,Rg=1Ω2345nsRiseTimetr70120Turn-OffDelayTimetd(off)3360FallTimetf1530Turn-OnDelayTimetd(on)VDD=15V,RL=1.
5ΩID10A,VGEN=10V,Rg=1Ω1020RiseTimetr1224Turn-OffDelayTimetd(off)2445FallTimetf816Drain-SourceBodyDiodeCharacteristicsContinuousSource-DrainDiodeCurrentISTC=25°C40APulseDiodeForwardCurrentISM70BodyDiodeVoltageVSDIS=3A,VGS=0V0.
741.
2VBodyDiodeReverseRecoveryTimetrrIF=10A,dI/dt=100A/s,TJ=25°C3050nsBodyDiodeReverseRecoveryChargeQrr2338nCReverseRecoveryFallTimeta15nsReverseRecoveryRiseTimetb15DocumentNumber:65039S09-1823-Rev.
A,14-Sep-09www.
vishay.
com3VishaySiliconixSiR168DPTYPICALCHARACTERISTICS25°C,unlessotherwisenotedOutputCharacteristicsOn-Resistancevs.
DrainCurrentandGateVoltageGateCharge012243648600.
00.
51.
01.
52.
02.
5VDS-Drain-to-SourceVoltage(V)ID-DrainCurrent(A)VGS=10Vthru4VVGS=3V0.
00300.
00360.
00420.
00480.
00540.
00601224364860RDS(on)-On-Resistance(Ω)ID-DrainCurrent(A)VGS=4.
5VVGS=10V0024681001122334455VGS-Gate-to-SourceVoltage(V)Qg-TotalGateCharge(nC)VDS=15VVDS=10VID=10AVDS=20VTransferCharacteristicsCapacitanceOn-Resistancevs.
JunctionTemperature0246810012345VGS-Gate-to-SourceVoltage(V)ID-DrainCurrent(A)TC=25°CTC=125°CTC=-55°CCrss056011201680224028000612182430CissVDS-Drain-to-SourceVoltage(V)C-Capacitance(pF)Coss0.
50.
81.
11.
41.
72.
0-50-250255075100125150TJ-JunctionTemperature(°C)RDS(on)-On-Resistance(Normalized)ID=15AVGS=4.
5VVGS=10Vwww.
vishay.
com4DocumentNumber:65039S09-1823-Rev.
A,14-Sep-09VishaySiliconixSiR168DPTYPICALCHARACTERISTICS25°C,unlessotherwisenotedSource-DrainDiodeForwardVoltageThresholdVoltage0.
00.
20.
40.
60.
81.
01.
2VSD-Source-to-DrainVoltage(V)IS-SourceCurrent(A)10.
010.
0010.
110100TJ=150°CTJ=25°C-1.
0-0.
7-0.
4-0.
10.
20.
5-50-250255075100125150VGS(th)Variance(V)TJ-Temperature(°C)ID=5μAID=250μAOn-Resistancevs.
Gate-to-SourceVoltageSinglePulsePower(Junction-to-Ambient)0.
0000.
0040.
0080.
0120.
0160.
020012345678910RDS(on)-On-Resistance(Ω)VGS-Gate-to-SourceVoltage(V)ID=15ATJ=125°CTJ=25°C050100150200250011100.
00.
01Time(s)Power(W)0.
1SafeOperatingArea,Junction-to-Ambient0.
0110011000.
01ID-DrainCurrent(A)0.
1VDS-Drain-to-SourceVoltage(V)*VGS>minimumVGSatwhichRDS(on)isspecified1ms10s0.
111010TA=25°CSinglePulseDC1sLimitedbyRDS(on)*BVDSSLimited100ms10msDocumentNumber:65039S09-1823-Rev.
A,14-Sep-09www.
vishay.
com5VishaySiliconixSiR168DPTYPICALCHARACTERISTICS25°C,unlessotherwisenoted*ThepowerdissipationPDisbasedonTJ(max)=150°C,usingjunction-to-casethermalresistance,andismoreusefulinsettlingtheupperdissipationlimitforcaseswhereadditionalheatsinkingisused.
Itisusedtodeterminethecurrentrating,whenthisratingfallsbelowthepackagelimit.
CurrentDerating*015304560750255075100125150TC-CaseTemperature(°C)ID-DrainCurrent(A)PackageLimitedPower,Junction-to-Case09182736450255075100125150TC-CaseTemperature(°C)Power(W)Power,Junction-to-Ambient0.
00.
51.
01.
52.
02.
50255075100125150TA-AmbientTemperature(°C)Power(W)www.
vishay.
com6DocumentNumber:65039S09-1823-Rev.
A,14-Sep-09VishaySiliconixSiR168DPTYPICALCHARACTERISTICS25°C,unlessotherwisenotedVishaySiliconixmaintainsworldwidemanufacturingcapability.
Productsmaybemanufacturedatoneofseveralqualifiedlocations.
ReliabilitydataforSiliconTechnologyandPackageReliabilityrepresentacompositeofallqualifiedlocations.
Forrelateddocumentssuchaspackage/tapedrawings,partmarking,andreliabilitydata,seewww.
vishay.
com/ppg65039.
NormalizedThermalTransientImpedance,Junction-to-Ambient10-310-2110100010-110-41000.
20.
1SquareWavePulseDuration(s)NormalizedEffectiveTransientThermalImpedance10.
10.
01t1t2Notes:PDM1.
DutyCycle,D=2.
PerUnitBase=RthJA=70°C/W3.
TJM-TA=PDMZthJA(t)t1t24.
SurfaceMountedDutyCycle=0.
5SinglePulse0.
020.
05NormalizedThermalTransientImpedance,Junction-to-Case10.
10.
01DutyCycle=0.
5SquareWavePulseDuration(s)NormalizedEffectiveTransientThermalImpedance10-310-2110-110-40.
02SinglePulse0.
10.
20.
05DocumentNumber:91000www.
vishay.
comRevision:18-Jul-081DisclaimerLegalDisclaimerNoticeVishayAllproductspecificationsanddataaresubjecttochangewithoutnotice.
VishayIntertechnology,Inc.
,itsaffiliates,agents,andemployees,andallpersonsactingonitsortheirbehalf(collectively,"Vishay"),disclaimanyandallliabilityforanyerrors,inaccuraciesorincompletenesscontainedhereinorinanyotherdisclosurerelatingtoanyproduct.
Vishaydisclaimsanyandallliabilityarisingoutoftheuseorapplicationofanyproductdescribedhereinorofanyinformationprovidedhereintothemaximumextentpermittedbylaw.
TheproductspecificationsdonotexpandorotherwisemodifyVishay'stermsandconditionsofpurchase,includingbutnotlimitedtothewarrantyexpressedtherein,whichapplytotheseproducts.
Nolicense,expressorimplied,byestoppelorotherwise,toanyintellectualpropertyrightsisgrantedbythisdocumentorbyanyconductofVishay.
Theproductsshownhereinarenotdesignedforuseinmedical,life-saving,orlife-sustainingapplicationsunlessotherwiseexpresslyindicated.
CustomersusingorsellingVishayproductsnotexpresslyindicatedforuseinsuchapplicationsdosoentirelyattheirownriskandagreetofullyindemnifyVishayforanydamagesarisingorresultingfromsuchuseorsale.
PleasecontactauthorizedVishaypersonneltoobtainwrittentermsandconditionsregardingproductsdesignedforsuchapplications.
Productnamesandmarkingsnotedhereinmaybetrademarksoftheirrespectiveowners.
PackageInformationwww.
vishay.
comVishaySiliconixRevison:13-Feb-171DocumentNumber:71655THISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000PowerPAKSO-8,(Single/Dual)DIM.
MILLIMETERSINCHESMIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A0.
971.
041.
120.
0380.
0410.
044A1-0.
050-0.
002b0.
330.
410.
510.
0130.
0160.
020c0.
230.
280.
330.
0090.
0110.
013D5.
055.
155.
260.
1990.
2030.
207D14.
804.
905.
000.
1890.
1930.
197D23.
563.
763.
910.
1400.
1480.
154D31.
321.
501.
680.
0520.
0590.
066D40.
57typ.
0.
0225typ.
D53.
98typ.
0.
157typ.
E6.
056.
156.
250.
2380.
2420.
246E15.
795.
895.
990.
2280.
2320.
236E23.
483.
663.
840.
1370.
1440.
151E33.
683.
783.
910.
1450.
1490.
154E40.
75typ.
0.
030typ.
e1.
27BSC0.
050BSCK1.
27typ.
0.
050typ.
K10.
56--0.
022--H0.
510.
610.
710.
0200.
0240.
028L0.
510.
610.
710.
0200.
0240.
028L10.
060.
130.
200.
0020.
0050.
0080°-12°0°-12°W0.
150.
250.
360.
0060.
0100.
014M0.
125typ.
0.
005typ.
ECN:S17-0173-Rev.
L,13-Feb-17DWG:58813.
Dimensionsexclusiveofmoldflashandcuttingburrs.
1.
Notes2Inchwillgovern.
Dimensionsexclusiveofmoldgateburrs.
BacksideViewofSinglePadBacksideViewofDualPadDetailZDD1D2cθAθE1θD1E2D2eb1234H4321θ1234bLD2D3(2x)ZA1K1KDEWL1D5E3D4E4E4KLHE2D4D5ME322VISHAYSILICONIXPowerMOSFETsApplicationNoteAN821PowerPAKSO-8MountingandThermalConsiderationsAPPLICATIONNOTERevision:16-Mai-131DocumentNumber:71622Fortechnicalquestions,contact:powermosfettechsupport@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000www.
vishay.
combyWhartonMcDanielMOSFETsforswitchingapplicationsarenowavailablewithdieonresistancesaround1mandwiththecapabilitytohandle85A.
Whilethesediecapabilitiesrepresentamajoradvanceoverwhatwasavailablejustafewyearsago,itisimportantforpowerMOSFETpackagingtechnologytokeeppace.
Itshouldbeobviousthatdegradationofahighperformancediebythepackageisundesirable.
PowerPAKisanewpackagetechnologythataddressestheseissues.
Inthisapplicationnote,PowerPAK'sconstructionisdescribed.
Followingthismountinginformationispresentedincludinglandpatternsandsolderingprofilesformaximumreliability.
Finally,thermalandelectricalperformanceisdiscussed.
THEPowerPAKPACKAGEThePowerPAKpackagewasdevelopedaroundtheSO-8package(figure1).
ThePowerPAKSO-8utilizesthesamefootprintandthesamepin-outsasthestandardSO-8.
ThisallowsPowerPAKtobesubstituteddirectlyforastandardSO-8package.
Beingaleadlesspackage,PowerPAKSO-8utilizestheentireSO-8footprint,freeingspacenormallyoccupiedbytheleads,andthusallowingittoholdalargerdiethanastandardSO-8.
Infact,thislargerdieisslightlylargerthanafullsizedDPAKdie.
Thebottomofthedieattachpadisexposedforthepurposeofprovidingadirect,lowresistancethermalpathtothesubstratethedeviceismountedon.
Finally,thepackageheightislowerthanthestandardSO-8,makingitanexcellentchoiceforapplicationswithspaceconstraints.
Fig.
1PowerPAK1212DevicesPowerPAKSO-8SINGLEMOUNTINGThePowerPAKsingleissimpletouse.
Thepinarrangement(drain,source,gatepins)andthepindimensionsarethesameasstandardSO-8devices(seefigure2).
Therefore,thePowerPAKconnectionpadsmatchdirectlytothoseoftheSO-8.
Theonlydifferenceistheextendeddrainconnectionarea.
TotakeimmediateadvantageofthePowerPAKSO-8singledevices,theycanbemountedtoexistingSO-8landpatterns.
Fig.
2TheminimumlandpatternrecommendedtotakefulladvantageofthePowerPAKthermalperformanceseeApplicationNote826,RecommendedMinimumPadPatternsWithOutlineDrawingAccessforVishaySiliconixMOSFETs.
ClickonthePowerPAKSO-8singleintheindexofthisdocument.
Inthisfigure,thedrainlandpatternisgiventomakefullcontacttothedrainpadonthePowerPAKpackage.
Thislandpatterncanbeextendedtotheleft,right,andtopofthedrawnpattern.
ThisextensionwillservetoincreasetheheatdissipationbydecreasingthethermalresistancefromthefootofthePowerPAKtothePCboardandthereforetotheambient.
Notethatincreasingthedrainlandareabeyondacertainpointwillyieldlittledecreaseinfoot-to-boardandfoot-to-ambientthermalresistance.
Underspecificconditionsofboardconfiguration,copperweightandlayerstack,experimentshavefoundthatmorethanabout0.
25in2to0.
5in2ofadditionalcopper(inadditiontothedrainland)willyieldlittleimprovementinthermalperformance.
StandardSO-8PowerPAKSO-8PowerPAKSO-8MountingandThermalConsiderationsAPPLICATIONNOTEApplicationNoteAN821www.
vishay.
comVishaySiliconixRevision:16-Mai-132DocumentNumber:71622Fortechnicalquestions,contact:powermosfettechsupport@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000PowerPAKSO-8DUALThepinarrangement(drain,source,gatepins)andthepindimensionsofthePowerPAKSO-8dualarethesameasstandardSO-8dualdevices.
Therefore,thePowerPAKdeviceconnectionpadsmatchdirectlytothoseoftheSO-8.
Asinthesingle-channelpackage,theonlyexceptionistheextendeddrainconnectionarea.
ManufacturerscanlikewisetakeimmediateadvantageofthePowerPAKSO-8dualdevicesbymountingthemtoexistingSO-8duallandpatterns.
TotaketheadvantageofthedualPowerPAKSO-8'sthermalperformance,theminimumrecommendedlandpatterncanbefoundinApplicationNote826,RecommendedMinimumPadPatternsWithOutlineDrawingAccessforVishaySiliconixMOSFETs.
ClickonthePowerPAK1212-8dualintheindexofthisdocument.
Thegapbetweenthetwodrainpadsis24mils.
ThismatchesthespacingofthetwodrainpadsonthePowerPAKSO-8dualpackage.
REFLOWSOLDERINGVishaySiliconixsurface-mountpackagesmeetsolderreflowreliabilityrequirements.
Devicesaresubjectedtosolderreflowasatestpreconditioningandarethenreliability-testedusingtemperaturecycle,biashumidity,HAST,orpressurepot.
Thesolderreflowtemperatureprofileused,andthetemperaturesandtimeduration,areshowninfigures3and4.
Forthelead(Pb)-freesolderprofile,seewww.
vishay.
com/doc73257.
Fig.
3SolderReflowTemperatureProfileFig.
4SolderReflowTemperaturesandTimeDurationsRamp-UpRate+3°C/smax.
Temperatureat150-200°C120smax.
TemperatureAbove217°C60-150sMaximumTemperature255+5/-0°CTimeatMaximumTemperature30sRamp-DownRate+6°C/smax.
260°C3°C(max)6°C/s(max.
)30s217°C150s(max.
)ReflowZone60s(min.
)Pre-HeatingZone150-200°CMaximumpeaktemperatureat240°Cisallowed.
PowerPAKSO-8MountingandThermalConsiderationsAPPLICATIONNOTEApplicationNoteAN821www.
vishay.
comVishaySiliconixRevision:16-Mai-133DocumentNumber:71622Fortechnicalquestions,contact:powermosfettechsupport@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000THERMALPERFORMANCEIntroductionAbasicmeasureofadevice'sthermalperformanceisthejunction-to-casethermalresistance,RthJC,orthejunction-to-footthermalresistance,RthJFThisparameterismeasuredforthedevicemountedtoaninfiniteheatsinkandisthereforeacharacterizationofthedeviceonly,inotherwords,independentofthepropertiesoftheobjecttowhichthedeviceismounted.
Table1showsacomparisonoftheDPAK,PowerPAKSO-8,andstandardSO-8.
ThePowerPAKhasthermalperformanceequivalenttotheDPAK,whilehavinganorderofmagnitudebetterthermalperformanceovertheSO-8.
ThermalPerformanceonStandardSO-8PadPatternBecauseofthecommonfootprint,aPowerPAKSO-8canbemountedonanexistingstandardSO-8padpattern.
ThequestionthenarisesastothethermalperformanceofthePowerPAKdeviceundertheseconditions.
AcharacterizationwasmadecomparingastandardSO-8andaPowerPAKdeviceonaboardwithatroughcutoutunderneaththePowerPAKdrainpad.
ThisconfigurationrestrictedtheheatflowtotheSO-8landpads.
Theresultsareshowninfigure5.
Fig.
5PowerPAKSO-8andStandardSO-0LandPadThermalPathBecauseofthepresenceofthetrough,thisresultsuggestsaminimumperformanceimprovementof10°C/WbyusingaPowerPAKSO-8inastandardSO-8PCboardmount.
TheonlyconcernwhenmountingaPowerPAKonastandardSO-8padpatternisthatthereshouldbenotracesrunningbetweenthebodyoftheMOSFET.
WherethestandardSO-8bodyisspacedawayfromthepcboard,allowingtracestorununderneath,thePowerPAKsitsdirectlyonthepcboard.
ThermalPerformance-SpreadingCopperDesignersmayaddadditionalcopper,spreadingcopper,tothedrainpadtoaidinconductingheatfromadevice.
Itishelpfultohavesomeinformationaboutthethermalperformanceforagivenareaofspreadingcopper.
Figure6showsthethermalresistanceofaPowerPAKSO-8devicemountedona2-in.
2-in.
,four-layerFR-4PCboard.
Thetwointernallayersandthebacksidelayeraresolidcopper.
Theinternallayerswerechosenassolidcoppertomodelthelargepowerandgroundplanescommoninmanyapplications.
Thetoplayerwascutbacktoasmallerareaandateachstepjunction-to-ambientthermalresistancemeasurementsweretaken.
Theresultsindicatethatanareaabove0.
3to0.
4squareinchesofspreadingcoppergivesnoadditionalthermalperformanceimprovement.
Asubsequentexperimentwasrunwherethecopperontheback-sidewasreduced,firstto50%instripestomimiccircuittraces,andthentotallyremoved.
Nosignificanteffectwasobserved.
Fig.
6SpreadingCopperJunction-to-AmbientPerformanceTABLE1-DPAKANDPOWERPAKSO-8EQUIVALENTSTEADYSTATEPERFORMANCEDPAKPowerPAKSO-8StandardSO-8ThermalResistanceRthJC1.
2°C/W1°C/W16°C/WSi4874DYvs.
Si7446DPPPAKona4-LayerBoardSO-8Pattern,TroughUnderDrainPulseDuration(sec))sttaw/C(ecnadepmI0.
000101506010100000.
014020Si4874DYSi7446DP10030Rthvs.
SpreadingCopper(0%,50%,100%BackCopper)SpreadingCopper(sqin))sttaw/C(ecnadepmI0.
0056514641360.
250.
500.
751.
001.
251.
501.
752.
000%50%100%PowerPAKSO-8MountingandThermalConsiderationsAPPLICATIONNOTEApplicationNoteAN821www.
vishay.
comVishaySiliconixRevision:16-Mai-134DocumentNumber:71622Fortechnicalquestions,contact:powermosfettechsupport@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000SYSTEMANDELECTRICALIMPACTOFPowerPAKSO-8Inanydesign,onemusttakeintoaccountthechangeinMOSFETRDS(on)withtemperature(figure7).
Fig.
7MOSFETRDS(on)vs.
TemperatureAMOSFETgeneratesinternalheatduetothecurrentpassingthroughthechannel.
Thisself-heatingraisesthejunctiontemperatureofthedeviceabovethatofthePCboardtowhichitismounted,causingincreasedpowerdissipationinthedevice.
Amajorsourceofthisproblemliesinthelargevaluesofthejunction-to-footthermalresistanceoftheSO-8package.
PowerPAKSO-8minimizesthejunction-to-boardthermalresistancetowheretheMOSFETdietemperatureisveryclosetothetemperatureofthePCboard.
ConsidertwodevicesmountedonaPCboardheatedto105°Cbyothercomponentsontheboard(figure8).
Fig.
8TemperatureofDevicesonaPCBoardSupposeeachdeviceisdissipating2.
7W.
Usingthejunction-to-footthermalresistancecharacteristicsofthePowerPAKSO-8andthestandardSO-8,thedietemperatureisdeterminedtobe107°CforthePowerPAK(andforDPAK)and148°CforthestandardSO-8.
Thisisa2°CriseabovetheboardtemperatureforthePowerPAKanda43°CriseforthestandardSO-8.
Referringtofigure7,a2°CdifferencehasminimaleffectonRDS(on)whereasa43°CdifferencehasasignificanteffectonRDS(on).
MinimizingthethermalriseabovetheboardtemperaturebyusingPowerPAKhasnotonlyeasedthethermaldesignbutithasallowedthedevicetoruncooler,keeprDS(on)low,andpermitsthedevicetohandlemorecurrentthanthesameMOSFETdieinthestandardSO-8package.
CONCLUSIONSPowerPAKSO-8hasbeenshowntohavethesamethermalperformanceastheDPAKpackagewhilehavingthesamefootprintasthestandardSO-8package.
ThePowerPAKSO-8canholdlargerdieapproximatelyequalinsizetothemaximumthattheDPAKcanaccommodateimplyingnosacrificeinperformancebecauseofpackagelimitations.
RecommendedPowerPAKSO-8landpatternsareprovidedtoaidinPCboardlayoutfordesignsusingthisnewpackage.
ThermalconsiderationshaveindicatedthatsignificantadvantagescanbegainedbyusingPowerPAKSO-8devicesindesignswherethePCboardwaslaidoutforthestandardSO-8.
ApplicationsexperimentaldatagavethermalperformancedatashowingminimumandtypicalthermalperformanceinaSO-8environment,plusinformationontheoptimumthermalperformanceobtainableincludingspreadingcopper.
ThisfurtheremphasizedtheDPAKequivalency.
PowerPAKSO-8thereforehasthedesiredsmallsizecharacteristicsoftheSO-8combinedwiththeattractivethermalcharacteristicsoftheDPAKpackage.
0.
60.
81.
01.
21.
41.
61.
8-50-250255075100125150VGS=10VID=23AOn-Resistancevs.
JunctionTemperatureTJ-JunctionTemperature(°C))dezilamroN((ecnatsiseR-nO-R)no(SD)0.
8°C/W107°CPowerPAKSO-816C/W148°CStandardSO-8PCBoardat105°CApplicationNote826VishaySiliconixDocumentNumber:72599www.
vishay.
comRevision:21-Jan-0815APPLICATIONNOTERECOMMENDEDMINIMUMPADSFORPowerPAKSO-8Single0.
174(4.
42)RecommendedMinimumPadsDimensionsinInches/(mm)0.
260(6.
61)0.
024(0.
61)0.
154(3.
91)0.
150(3.
81)0.
050(1.
27)0.
050(1.
27)0.
032(0.
82)0.
040(1.
02)0.
026(0.
66)ReturntoIndexReturntoIndexLegalDisclaimerNoticewww.
vishay.
comVishayRevision:08-Feb-171DocumentNumber:91000DisclaimerALLPRODUCT,PRODUCTSPECIFICATIONSANDDATAARESUBJECTTOCHANGEWITHOUTNOTICETOIMPROVERELIABILITY,FUNCTIONORDESIGNOROTHERWISE.
VishayIntertechnology,Inc.
,itsaffiliates,agents,andemployees,andallpersonsactingonitsortheirbehalf(collectively,"Vishay"),disclaimanyandallliabilityforanyerrors,inaccuraciesorincompletenesscontainedinanydatasheetorinanyotherdisclosurerelatingtoanyproduct.
Vishaymakesnowarranty,representationorguaranteeregardingthesuitabilityoftheproductsforanyparticularpurposeorthecontinuingproductionofanyproduct.
Tothemaximumextentpermittedbyapplicablelaw,Vishaydisclaims(i)anyandallliabilityarisingoutoftheapplicationoruseofanyproduct,(ii)anyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages,and(iii)anyandallimpliedwarranties,includingwarrantiesoffitnessforparticularpurpose,non-infringementandmerchantability.
StatementsregardingthesuitabilityofproductsforcertaintypesofapplicationsarebasedonVishay'sknowledgeoftypicalrequirementsthatareoftenplacedonVishayproductsingenericapplications.
Suchstatementsarenotbindingstatementsaboutthesuitabilityofproductsforaparticularapplication.
Itisthecustomer'sresponsibilitytovalidatethataparticularproductwiththepropertiesdescribedintheproductspecificationissuitableforuseinaparticularapplication.
Parametersprovidedindatasheetsand/orspecificationsmayvaryindifferentapplicationsandperformancemayvaryovertime.
Alloperatingparameters,includingtypicalparameters,mustbevalidatedforeachcustomerapplicationbythecustomer'stechnicalexperts.
ProductspecificationsdonotexpandorotherwisemodifyVishay'stermsandconditionsofpurchase,includingbutnotlimitedtothewarrantyexpressedtherein.
Exceptasexpresslyindicatedinwriting,Vishayproductsarenotdesignedforuseinmedical,life-saving,orlife-sustainingapplicationsorforanyotherapplicationinwhichthefailureoftheVishayproductcouldresultinpersonalinjuryordeath.
CustomersusingorsellingVishayproductsnotexpresslyindicatedforuseinsuchapplicationsdosoattheirownrisk.
PleasecontactauthorizedVishaypersonneltoobtainwrittentermsandconditionsregardingproductsdesignedforsuchapplications.
Nolicense,expressorimplied,byestoppelorotherwise,toanyintellectualpropertyrightsisgrantedbythisdocumentorbyanyconductofVishay.
Productnamesandmarkingsnotedhereinmaybetrademarksoftheirrespectiveowners.
2017VISHAYINTERTECHNOLOGY,INC.
ALLRIGHTSRESERVED