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CSD16415Q5www.
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cnZHCS630–DECEMBER2011N通道NexFET功率金属氧化物半导体场效应晶体管(MOSFET)查询样品:CSD16415Q51特性产品概述2超低栅极电荷(Qg)和栅漏电荷(Qgd)VDS漏源极电压25V极低接通电阻Qg栅极电荷,总数(4.
5V)21nC低热阻性Qgd栅极电荷,栅漏5.
2nCVGS=4.
5V1.
5mΩ额定雪崩能量rDS(接通)漏源极接通电阻VGS=10V0.
99mΩ无铅端子电镀VGS(th)阀值电压1.
5V符合RoHS标准无卤素订购信息器件封装介质数量出货应用范围无引线小外形尺13英CSD16415Q5寸(SON)5mmx寸(33cm)卷2500卷带负载点同步降压转换器用于网络,电信和计算系统6mm塑料封装带为同步场效应晶体管(FET)应用进行了优化最大绝对额定值说明除非另外说明,否则TA=25°C数值单位此NexFET功率MOSFET已被设计成在功率转换应VDS漏源极电压25VVGS栅源极电压+16/-12V用中大大降低功率损失.
持续漏极电流,TC=25°C100AID顶视图持续漏极电流(1)38AIDM脉冲漏极电流,TA=25°C(2)200APD功率耗散(1)3.
2WTJ,运行结温和存储温度范围–55至150°CTSTG雪崩能量,单一脉冲EAS500mJID=100A,L=0.
1mH,RG=25Ω(1)RθJA=40°C/W,此条件是在1in2(6.
45cm2)Cu[2oz.
(厚度为0.
071mm)]的0.
060英寸厚度为(1.
52mm)FR4印刷电路板(PCB)上.
(2)脉冲持续时间≤300μs,占空比≤2%rDS(ON)对VGS栅极电荷1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2NexFETisatrademarkofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2011,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLPS259necessarilyincludetestingofallparameters.
CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnThesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDrain-to-sourcevoltageVGS=0V,ID=250μA25VIDSSDrain-to-sourceleakagecurrentVGS=0V,VDS=20V1μAIGSSGate-to-sourceleakagecurrentVDS=0V,VGS=–12Vto16V100nAVGS(th)Gate-to-sourcethresholdvoltageVDS=VGS,ID=250μA1.
21.
51.
9VVGS=4.
5V,ID=40A1.
51.
8mrDS(on)Drain-to-sourceon-resistanceVGS=10V,ID=40A0.
991.
15mgfsTransconductanceVDS=15V,ID=40A168SDynamicCharacteristicsCISSInputcapacitance31504100pFCOSSOutputcapacitanceVGS=0V,VDS=12.
5V,f=1MHz25303300pFCRSSReversetransfercapacitance175230pFRgSeriesgateresistance1.
22.
4QgGatechargetotal(4.
5V)2129nCQgdGatecharge,gate-to-drain5.
2nCVDS=12.
5V,ID=40AQgsGatecharge,gate-to-source8.
3nCQg(th)GatechargeatVth4.
8nCQOSSOutputchargeVDS=15V,VGS=0V55nCtd(on)Turnondelaytime16.
6nstrRisetime30nsVDS=12.
5V,VGS=4.
5V,ID=40ARG=2td(off)Turnoffdelaytime20nstfFalltime12.
7nsDiodeCharacteristicsVSDDiodeforwardvoltageIS=40A,VGS=0V0.
851VQrrReverserecoverychargeVDD=15V,IF=40A,di/dt=300A/μs72nCtrrReverserecoverytimeVDD=15V,IF=40A,di/dt=300A/μs45nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalresistance,junction-to-case(1)1.
1°C/WRθJAThermalresistance,junction-to-ambient(1)(2)50°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch(2.
54-cm)square,2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
060-inch(1.
52-mm)thickFR4board.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1inch2(6.
45cm2)of2-oz.
(0.
071-mmthick)Cu.
2Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MaxRθJA=50°C/WMaxRθJA=121°C/Wwhenmountedon1whenmountedoninch2(6.
45cm2)ofminimumpadareaof2-oz.
(0.
071-mmthick)2-oz.
(0.
071-mmthick)Cu.
Cu.
TextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure1.
TransientThermalImpedanceCopyright2011,TexasInstrumentsIncorporated3CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure2.
SaturationCharacteristicsFigure3.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure4.
GateChargeFigure5.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure6.
ThresholdVoltagevs.
TemperatureFigure7.
On-Resistancevs.
GateVoltage4Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure8.
On-Resistancevs.
TemperatureFigure9.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure10.
MaximumSafeOperatingAreaFigure11.
Single-PulseUnclampedInductiveSwitchingTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure12.
MaximumDrainCurrentvs.
TemperatureCopyright2011,TexasInstrumentsIncorporated5CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnMECHANICALDATAQ5PackageDimensionsMILLIMETERSINCHESDIMMINMAXMINMAXA0.
9501.
0500.
0370.
039b0.
3600.
4600.
0140.
018c0.
1500.
2500.
0060.
010c10.
1500.
2500.
0060.
010D14.
9005.
1000.
1930.
201D24.
3204.
5200.
1700.
178E4.
9005.
1000.
1930.
201E15.
9006.
1000.
2320.
240E23.
9204.
120.
1540.
162e1.
27TYP0.
050K0.
7600.
030L0.
5100.
7100.
0200.
028θ0.
006Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MILLIMETERSINCHESDIMFigure13.
RecommendedPCBPatternMINMAXMINMAXF16.
2056.
3050.
2440.
248F24.
4604.
5600.
1760.
180F34.
4604.
5600.
1760.
180F40.
6500.
7000.
0260.
028F50.
6200.
6700.
0240.
026F60.
6300.
6800.
0250.
027F70.
7000.
8000.
0280.
031F80.
6500.
7000.
0260.
028F90.
6200.
6700.
0240.
026F104.
9005.
0000.
1930.
197F114.
4604.
5600.
1760.
180ForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q5TapeandReelInformationNotes:1.
10sprocketholepitchcumulativetolerance±0.
22.
Cambernottoexceed1mmIN100mm,noncumulativeover250mm3.
Material:blackstaticdissipativepolystyrene4.
Alldimensionsareinmm(unlessotherwisespecified)5.
A0andB0measuredonaplane0.
3mmabovethebottomofthepocket6.
MSL1260°C(IRandConvection)PbFReflowCompatibleCopyright2011,TexasInstrumentsIncorporated7PACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD16415Q5ACTIVEVSON-CLIPDQH82500RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415CSD16415Q5TACTIVEVSON-CLIPDQH8250RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsof.
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