栅极.com.cn
.com.cn 时间:2021-05-25 阅读:()
CSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011N通道NexFET功率金属氧化物半导体场效应晶体管(MOSFET)查询样品:CSD16415Q51特性产品概述2超低栅极电荷(Qg)和栅漏电荷(Qgd)VDS漏源极电压25V极低接通电阻Qg栅极电荷,总数(4.
5V)21nC低热阻性Qgd栅极电荷,栅漏5.
2nCVGS=4.
5V1.
5mΩ额定雪崩能量rDS(接通)漏源极接通电阻VGS=10V0.
99mΩ无铅端子电镀VGS(th)阀值电压1.
5V符合RoHS标准无卤素订购信息器件封装介质数量出货应用范围无引线小外形尺13英CSD16415Q5寸(SON)5mmx寸(33cm)卷2500卷带负载点同步降压转换器用于网络,电信和计算系统6mm塑料封装带为同步场效应晶体管(FET)应用进行了优化最大绝对额定值说明除非另外说明,否则TA=25°C数值单位此NexFET功率MOSFET已被设计成在功率转换应VDS漏源极电压25VVGS栅源极电压+16/-12V用中大大降低功率损失.
持续漏极电流,TC=25°C100AID顶视图持续漏极电流(1)38AIDM脉冲漏极电流,TA=25°C(2)200APD功率耗散(1)3.
2WTJ,运行结温和存储温度范围–55至150°CTSTG雪崩能量,单一脉冲EAS500mJID=100A,L=0.
1mH,RG=25Ω(1)RθJA=40°C/W,此条件是在1in2(6.
45cm2)Cu[2oz.
(厚度为0.
071mm)]的0.
060英寸厚度为(1.
52mm)FR4印刷电路板(PCB)上.
(2)脉冲持续时间≤300μs,占空比≤2%rDS(ON)对VGS栅极电荷1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2NexFETisatrademarkofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2011,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLPS259necessarilyincludetestingofallparameters.
CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnThesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDrain-to-sourcevoltageVGS=0V,ID=250μA25VIDSSDrain-to-sourceleakagecurrentVGS=0V,VDS=20V1μAIGSSGate-to-sourceleakagecurrentVDS=0V,VGS=–12Vto16V100nAVGS(th)Gate-to-sourcethresholdvoltageVDS=VGS,ID=250μA1.
21.
51.
9VVGS=4.
5V,ID=40A1.
51.
8mrDS(on)Drain-to-sourceon-resistanceVGS=10V,ID=40A0.
991.
15mgfsTransconductanceVDS=15V,ID=40A168SDynamicCharacteristicsCISSInputcapacitance31504100pFCOSSOutputcapacitanceVGS=0V,VDS=12.
5V,f=1MHz25303300pFCRSSReversetransfercapacitance175230pFRgSeriesgateresistance1.
22.
4QgGatechargetotal(4.
5V)2129nCQgdGatecharge,gate-to-drain5.
2nCVDS=12.
5V,ID=40AQgsGatecharge,gate-to-source8.
3nCQg(th)GatechargeatVth4.
8nCQOSSOutputchargeVDS=15V,VGS=0V55nCtd(on)Turnondelaytime16.
6nstrRisetime30nsVDS=12.
5V,VGS=4.
5V,ID=40ARG=2td(off)Turnoffdelaytime20nstfFalltime12.
7nsDiodeCharacteristicsVSDDiodeforwardvoltageIS=40A,VGS=0V0.
851VQrrReverserecoverychargeVDD=15V,IF=40A,di/dt=300A/μs72nCtrrReverserecoverytimeVDD=15V,IF=40A,di/dt=300A/μs45nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalresistance,junction-to-case(1)1.
1°C/WRθJAThermalresistance,junction-to-ambient(1)(2)50°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch(2.
54-cm)square,2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
060-inch(1.
52-mm)thickFR4board.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1inch2(6.
45cm2)of2-oz.
(0.
071-mmthick)Cu.
2Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MaxRθJA=50°C/WMaxRθJA=121°C/Wwhenmountedon1whenmountedoninch2(6.
45cm2)ofminimumpadareaof2-oz.
(0.
071-mmthick)2-oz.
(0.
071-mmthick)Cu.
Cu.
TextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure1.
TransientThermalImpedanceCopyright2011,TexasInstrumentsIncorporated3CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure2.
SaturationCharacteristicsFigure3.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure4.
GateChargeFigure5.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure6.
ThresholdVoltagevs.
TemperatureFigure7.
On-Resistancevs.
GateVoltage4Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure8.
On-Resistancevs.
TemperatureFigure9.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure10.
MaximumSafeOperatingAreaFigure11.
Single-PulseUnclampedInductiveSwitchingTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure12.
MaximumDrainCurrentvs.
TemperatureCopyright2011,TexasInstrumentsIncorporated5CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnMECHANICALDATAQ5PackageDimensionsMILLIMETERSINCHESDIMMINMAXMINMAXA0.
9501.
0500.
0370.
039b0.
3600.
4600.
0140.
018c0.
1500.
2500.
0060.
010c10.
1500.
2500.
0060.
010D14.
9005.
1000.
1930.
201D24.
3204.
5200.
1700.
178E4.
9005.
1000.
1930.
201E15.
9006.
1000.
2320.
240E23.
9204.
120.
1540.
162e1.
27TYP0.
050K0.
7600.
030L0.
5100.
7100.
0200.
028θ0.
006Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MILLIMETERSINCHESDIMFigure13.
RecommendedPCBPatternMINMAXMINMAXF16.
2056.
3050.
2440.
248F24.
4604.
5600.
1760.
180F34.
4604.
5600.
1760.
180F40.
6500.
7000.
0260.
028F50.
6200.
6700.
0240.
026F60.
6300.
6800.
0250.
027F70.
7000.
8000.
0280.
031F80.
6500.
7000.
0260.
028F90.
6200.
6700.
0240.
026F104.
9005.
0000.
1930.
197F114.
4604.
5600.
1760.
180ForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q5TapeandReelInformationNotes:1.
10sprocketholepitchcumulativetolerance±0.
22.
Cambernottoexceed1mmIN100mm,noncumulativeover250mm3.
Material:blackstaticdissipativepolystyrene4.
Alldimensionsareinmm(unlessotherwisespecified)5.
A0andB0measuredonaplane0.
3mmabovethebottomofthepocket6.
MSL1260°C(IRandConvection)PbFReflowCompatibleCopyright2011,TexasInstrumentsIncorporated7PACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD16415Q5ACTIVEVSON-CLIPDQH82500RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415CSD16415Q5TACTIVEVSON-CLIPDQH8250RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsof.
com.
cn/zh-cn/legal/termsofsale.
html)以及ti.
com.
cn上或随附TI产品提供的其他可适用条款的约束.
TI提供所述资源并不扩展或以其他方式更改TI针对TI产品所发布的可适用的担保范围或担保免责声明.
IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2020德州仪器半导体技术(上海)有限公司
ti.
com.
cnZHCS630–DECEMBER2011N通道NexFET功率金属氧化物半导体场效应晶体管(MOSFET)查询样品:CSD16415Q51特性产品概述2超低栅极电荷(Qg)和栅漏电荷(Qgd)VDS漏源极电压25V极低接通电阻Qg栅极电荷,总数(4.
5V)21nC低热阻性Qgd栅极电荷,栅漏5.
2nCVGS=4.
5V1.
5mΩ额定雪崩能量rDS(接通)漏源极接通电阻VGS=10V0.
99mΩ无铅端子电镀VGS(th)阀值电压1.
5V符合RoHS标准无卤素订购信息器件封装介质数量出货应用范围无引线小外形尺13英CSD16415Q5寸(SON)5mmx寸(33cm)卷2500卷带负载点同步降压转换器用于网络,电信和计算系统6mm塑料封装带为同步场效应晶体管(FET)应用进行了优化最大绝对额定值说明除非另外说明,否则TA=25°C数值单位此NexFET功率MOSFET已被设计成在功率转换应VDS漏源极电压25VVGS栅源极电压+16/-12V用中大大降低功率损失.
持续漏极电流,TC=25°C100AID顶视图持续漏极电流(1)38AIDM脉冲漏极电流,TA=25°C(2)200APD功率耗散(1)3.
2WTJ,运行结温和存储温度范围–55至150°CTSTG雪崩能量,单一脉冲EAS500mJID=100A,L=0.
1mH,RG=25Ω(1)RθJA=40°C/W,此条件是在1in2(6.
45cm2)Cu[2oz.
(厚度为0.
071mm)]的0.
060英寸厚度为(1.
52mm)FR4印刷电路板(PCB)上.
(2)脉冲持续时间≤300μs,占空比≤2%rDS(ON)对VGS栅极电荷1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2NexFETisatrademarkofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2011,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLPS259necessarilyincludetestingofallparameters.
CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnThesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDrain-to-sourcevoltageVGS=0V,ID=250μA25VIDSSDrain-to-sourceleakagecurrentVGS=0V,VDS=20V1μAIGSSGate-to-sourceleakagecurrentVDS=0V,VGS=–12Vto16V100nAVGS(th)Gate-to-sourcethresholdvoltageVDS=VGS,ID=250μA1.
21.
51.
9VVGS=4.
5V,ID=40A1.
51.
8mrDS(on)Drain-to-sourceon-resistanceVGS=10V,ID=40A0.
991.
15mgfsTransconductanceVDS=15V,ID=40A168SDynamicCharacteristicsCISSInputcapacitance31504100pFCOSSOutputcapacitanceVGS=0V,VDS=12.
5V,f=1MHz25303300pFCRSSReversetransfercapacitance175230pFRgSeriesgateresistance1.
22.
4QgGatechargetotal(4.
5V)2129nCQgdGatecharge,gate-to-drain5.
2nCVDS=12.
5V,ID=40AQgsGatecharge,gate-to-source8.
3nCQg(th)GatechargeatVth4.
8nCQOSSOutputchargeVDS=15V,VGS=0V55nCtd(on)Turnondelaytime16.
6nstrRisetime30nsVDS=12.
5V,VGS=4.
5V,ID=40ARG=2td(off)Turnoffdelaytime20nstfFalltime12.
7nsDiodeCharacteristicsVSDDiodeforwardvoltageIS=40A,VGS=0V0.
851VQrrReverserecoverychargeVDD=15V,IF=40A,di/dt=300A/μs72nCtrrReverserecoverytimeVDD=15V,IF=40A,di/dt=300A/μs45nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalresistance,junction-to-case(1)1.
1°C/WRθJAThermalresistance,junction-to-ambient(1)(2)50°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch(2.
54-cm)square,2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
060-inch(1.
52-mm)thickFR4board.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1inch2(6.
45cm2)of2-oz.
(0.
071-mmthick)Cu.
2Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MaxRθJA=50°C/WMaxRθJA=121°C/Wwhenmountedon1whenmountedoninch2(6.
45cm2)ofminimumpadareaof2-oz.
(0.
071-mmthick)2-oz.
(0.
071-mmthick)Cu.
Cu.
TextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure1.
TransientThermalImpedanceCopyright2011,TexasInstrumentsIncorporated3CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure2.
SaturationCharacteristicsFigure3.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure4.
GateChargeFigure5.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure6.
ThresholdVoltagevs.
TemperatureFigure7.
On-Resistancevs.
GateVoltage4Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure8.
On-Resistancevs.
TemperatureFigure9.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure10.
MaximumSafeOperatingAreaFigure11.
Single-PulseUnclampedInductiveSwitchingTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure12.
MaximumDrainCurrentvs.
TemperatureCopyright2011,TexasInstrumentsIncorporated5CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnMECHANICALDATAQ5PackageDimensionsMILLIMETERSINCHESDIMMINMAXMINMAXA0.
9501.
0500.
0370.
039b0.
3600.
4600.
0140.
018c0.
1500.
2500.
0060.
010c10.
1500.
2500.
0060.
010D14.
9005.
1000.
1930.
201D24.
3204.
5200.
1700.
178E4.
9005.
1000.
1930.
201E15.
9006.
1000.
2320.
240E23.
9204.
120.
1540.
162e1.
27TYP0.
050K0.
7600.
030L0.
5100.
7100.
0200.
028θ0.
006Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MILLIMETERSINCHESDIMFigure13.
RecommendedPCBPatternMINMAXMINMAXF16.
2056.
3050.
2440.
248F24.
4604.
5600.
1760.
180F34.
4604.
5600.
1760.
180F40.
6500.
7000.
0260.
028F50.
6200.
6700.
0240.
026F60.
6300.
6800.
0250.
027F70.
7000.
8000.
0280.
031F80.
6500.
7000.
0260.
028F90.
6200.
6700.
0240.
026F104.
9005.
0000.
1930.
197F114.
4604.
5600.
1760.
180ForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q5TapeandReelInformationNotes:1.
10sprocketholepitchcumulativetolerance±0.
22.
Cambernottoexceed1mmIN100mm,noncumulativeover250mm3.
Material:blackstaticdissipativepolystyrene4.
Alldimensionsareinmm(unlessotherwisespecified)5.
A0andB0measuredonaplane0.
3mmabovethebottomofthepocket6.
MSL1260°C(IRandConvection)PbFReflowCompatibleCopyright2011,TexasInstrumentsIncorporated7PACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD16415Q5ACTIVEVSON-CLIPDQH82500RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415CSD16415Q5TACTIVEVSON-CLIPDQH8250RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsof.
com.
cn/zh-cn/legal/termsofsale.
html)以及ti.
com.
cn上或随附TI产品提供的其他可适用条款的约束.
TI提供所述资源并不扩展或以其他方式更改TI针对TI产品所发布的可适用的担保范围或担保免责声明.
IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2020德州仪器半导体技术(上海)有限公司
易探云（QQ音乐绿钻）北京/深圳云服务器8核8G10M带宽低至1332.07元/年起
易探云怎么样?易探云香港云服务器比较有优势，他家香港BGP+CN2口碑不错，速度也很稳定。尤其是今年他们动作很大，推出的香港云服务器有4个可用区价格低至18元起，试用过一个月的用户基本会续费，如果年付的话还可以享受8.5折或秒杀价格。今天，云服务器网(yuntue.com)小编推荐一下易探云国内云服务器优惠活动，北京和深圳这二个机房的云服务器2核2G5M带宽低至330.66元/年，还有高配云服务器...
Hosteons - 限时洛杉矶/达拉斯/纽约 免费升级至10G带宽 低至年$21
Hosteons，一家海外主机商成立于2018年，在之前还没有介绍和接触这个主机商，今天是有在LEB上看到有官方发送的活动主要是针对LEB的用户提供的洛杉矶、达拉斯和纽约三个机房的方案，最低年付21美元，其特点主要在于可以从1G带宽升级至10G，而且是免费的，是不是很吸引人？本来这次活动是仅仅在LEB留言提交账单ID才可以，这个感觉有点麻烦。不过看到老龚同学有拿到识别优惠码，于是就一并来分享给有需...
ZJI全新上架香港站群服务器,4C段238个IP月付1400元起
ZJI本月新上线了香港葵湾机房站群服务器，提供4个C段238个IPv4，支持使用8折优惠码，优惠后最低每月1400元起。ZJI是原Wordpress圈知名主机商家：维翔主机，成立于2011年，2018年9月更名为ZJI，提供中国香港、台湾、日本、美国独立服务器(自营/数据中心直营)租用及VDS、虚拟主机空间、域名注册等业务，所选数据中心均为国内普遍访问速度不错的机房。葵湾二型(4C站群)CPU：I...
.com.cn为你推荐
-
Javamedia支持ipad步骤ios齐鲁工业大学高水平学科建设专项更新iphoneC1:山东品牌商品馆ipad如何上网苹果ipad无线上网卡怎么设置？ipad连不上wifiipad2 wifi连接不上,刚连上就弹出一个 success页面win7telnet怎样开启Windows7系统中的Telnet服务csshackcss常见的hack方法有哪些