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CSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011N通道NexFET功率金属氧化物半导体场效应晶体管(MOSFET)查询样品:CSD16415Q51特性产品概述2超低栅极电荷(Qg)和栅漏电荷(Qgd)VDS漏源极电压25V极低接通电阻Qg栅极电荷,总数(4.
5V)21nC低热阻性Qgd栅极电荷,栅漏5.
2nCVGS=4.
5V1.
5mΩ额定雪崩能量rDS(接通)漏源极接通电阻VGS=10V0.
99mΩ无铅端子电镀VGS(th)阀值电压1.
5V符合RoHS标准无卤素订购信息器件封装介质数量出货应用范围无引线小外形尺13英CSD16415Q5寸(SON)5mmx寸(33cm)卷2500卷带负载点同步降压转换器用于网络,电信和计算系统6mm塑料封装带为同步场效应晶体管(FET)应用进行了优化最大绝对额定值说明除非另外说明,否则TA=25°C数值单位此NexFET功率MOSFET已被设计成在功率转换应VDS漏源极电压25VVGS栅源极电压+16/-12V用中大大降低功率损失.
持续漏极电流,TC=25°C100AID顶视图持续漏极电流(1)38AIDM脉冲漏极电流,TA=25°C(2)200APD功率耗散(1)3.
2WTJ,运行结温和存储温度范围–55至150°CTSTG雪崩能量,单一脉冲EAS500mJID=100A,L=0.
1mH,RG=25Ω(1)RθJA=40°C/W,此条件是在1in2(6.
45cm2)Cu[2oz.
(厚度为0.
071mm)]的0.
060英寸厚度为(1.
52mm)FR4印刷电路板(PCB)上.
(2)脉冲持续时间≤300μs,占空比≤2%rDS(ON)对VGS栅极电荷1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2NexFETisatrademarkofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2011,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLPS259necessarilyincludetestingofallparameters.
CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnThesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDrain-to-sourcevoltageVGS=0V,ID=250μA25VIDSSDrain-to-sourceleakagecurrentVGS=0V,VDS=20V1μAIGSSGate-to-sourceleakagecurrentVDS=0V,VGS=–12Vto16V100nAVGS(th)Gate-to-sourcethresholdvoltageVDS=VGS,ID=250μA1.
21.
51.
9VVGS=4.
5V,ID=40A1.
51.
8mrDS(on)Drain-to-sourceon-resistanceVGS=10V,ID=40A0.
991.
15mgfsTransconductanceVDS=15V,ID=40A168SDynamicCharacteristicsCISSInputcapacitance31504100pFCOSSOutputcapacitanceVGS=0V,VDS=12.
5V,f=1MHz25303300pFCRSSReversetransfercapacitance175230pFRgSeriesgateresistance1.
22.
4QgGatechargetotal(4.
5V)2129nCQgdGatecharge,gate-to-drain5.
2nCVDS=12.
5V,ID=40AQgsGatecharge,gate-to-source8.
3nCQg(th)GatechargeatVth4.
8nCQOSSOutputchargeVDS=15V,VGS=0V55nCtd(on)Turnondelaytime16.
6nstrRisetime30nsVDS=12.
5V,VGS=4.
5V,ID=40ARG=2td(off)Turnoffdelaytime20nstfFalltime12.
7nsDiodeCharacteristicsVSDDiodeforwardvoltageIS=40A,VGS=0V0.
851VQrrReverserecoverychargeVDD=15V,IF=40A,di/dt=300A/μs72nCtrrReverserecoverytimeVDD=15V,IF=40A,di/dt=300A/μs45nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalresistance,junction-to-case(1)1.
1°C/WRθJAThermalresistance,junction-to-ambient(1)(2)50°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch(2.
54-cm)square,2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
060-inch(1.
52-mm)thickFR4board.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1inch2(6.
45cm2)of2-oz.
(0.
071-mmthick)Cu.
2Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MaxRθJA=50°C/WMaxRθJA=121°C/Wwhenmountedon1whenmountedoninch2(6.
45cm2)ofminimumpadareaof2-oz.
(0.
071-mmthick)2-oz.
(0.
071-mmthick)Cu.
Cu.
TextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure1.
TransientThermalImpedanceCopyright2011,TexasInstrumentsIncorporated3CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure2.
SaturationCharacteristicsFigure3.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure4.
GateChargeFigure5.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure6.
ThresholdVoltagevs.
TemperatureFigure7.
On-Resistancevs.
GateVoltage4Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure8.
On-Resistancevs.
TemperatureFigure9.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure10.
MaximumSafeOperatingAreaFigure11.
Single-PulseUnclampedInductiveSwitchingTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure12.
MaximumDrainCurrentvs.
TemperatureCopyright2011,TexasInstrumentsIncorporated5CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnMECHANICALDATAQ5PackageDimensionsMILLIMETERSINCHESDIMMINMAXMINMAXA0.
9501.
0500.
0370.
039b0.
3600.
4600.
0140.
018c0.
1500.
2500.
0060.
010c10.
1500.
2500.
0060.
010D14.
9005.
1000.
1930.
201D24.
3204.
5200.
1700.
178E4.
9005.
1000.
1930.
201E15.
9006.
1000.
2320.
240E23.
9204.
120.
1540.
162e1.
27TYP0.
050K0.
7600.
030L0.
5100.
7100.
0200.
028θ0.
006Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MILLIMETERSINCHESDIMFigure13.
RecommendedPCBPatternMINMAXMINMAXF16.
2056.
3050.
2440.
248F24.
4604.
5600.
1760.
180F34.
4604.
5600.
1760.
180F40.
6500.
7000.
0260.
028F50.
6200.
6700.
0240.
026F60.
6300.
6800.
0250.
027F70.
7000.
8000.
0280.
031F80.
6500.
7000.
0260.
028F90.
6200.
6700.
0240.
026F104.
9005.
0000.
1930.
197F114.
4604.
5600.
1760.
180ForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q5TapeandReelInformationNotes:1.
10sprocketholepitchcumulativetolerance±0.
22.
Cambernottoexceed1mmIN100mm,noncumulativeover250mm3.
Material:blackstaticdissipativepolystyrene4.
Alldimensionsareinmm(unlessotherwisespecified)5.
A0andB0measuredonaplane0.
3mmabovethebottomofthepocket6.
MSL1260°C(IRandConvection)PbFReflowCompatibleCopyright2011,TexasInstrumentsIncorporated7PACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD16415Q5ACTIVEVSON-CLIPDQH82500RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415CSD16415Q5TACTIVEVSON-CLIPDQH8250RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsof.
com.
cn/zh-cn/legal/termsofsale.
html)以及ti.
com.
cn上或随附TI产品提供的其他可适用条款的约束.
TI提供所述资源并不扩展或以其他方式更改TI针对TI产品所发布的可适用的担保范围或担保免责声明.
IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2020德州仪器半导体技术(上海)有限公司
ti.
com.
cnZHCS630–DECEMBER2011N通道NexFET功率金属氧化物半导体场效应晶体管(MOSFET)查询样品:CSD16415Q51特性产品概述2超低栅极电荷(Qg)和栅漏电荷(Qgd)VDS漏源极电压25V极低接通电阻Qg栅极电荷,总数(4.
5V)21nC低热阻性Qgd栅极电荷,栅漏5.
2nCVGS=4.
5V1.
5mΩ额定雪崩能量rDS(接通)漏源极接通电阻VGS=10V0.
99mΩ无铅端子电镀VGS(th)阀值电压1.
5V符合RoHS标准无卤素订购信息器件封装介质数量出货应用范围无引线小外形尺13英CSD16415Q5寸(SON)5mmx寸(33cm)卷2500卷带负载点同步降压转换器用于网络,电信和计算系统6mm塑料封装带为同步场效应晶体管(FET)应用进行了优化最大绝对额定值说明除非另外说明,否则TA=25°C数值单位此NexFET功率MOSFET已被设计成在功率转换应VDS漏源极电压25VVGS栅源极电压+16/-12V用中大大降低功率损失.
持续漏极电流,TC=25°C100AID顶视图持续漏极电流(1)38AIDM脉冲漏极电流,TA=25°C(2)200APD功率耗散(1)3.
2WTJ,运行结温和存储温度范围–55至150°CTSTG雪崩能量,单一脉冲EAS500mJID=100A,L=0.
1mH,RG=25Ω(1)RθJA=40°C/W,此条件是在1in2(6.
45cm2)Cu[2oz.
(厚度为0.
071mm)]的0.
060英寸厚度为(1.
52mm)FR4印刷电路板(PCB)上.
(2)脉冲持续时间≤300μs,占空比≤2%rDS(ON)对VGS栅极电荷1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2NexFETisatrademarkofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2011,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLPS259necessarilyincludetestingofallparameters.
CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnThesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDrain-to-sourcevoltageVGS=0V,ID=250μA25VIDSSDrain-to-sourceleakagecurrentVGS=0V,VDS=20V1μAIGSSGate-to-sourceleakagecurrentVDS=0V,VGS=–12Vto16V100nAVGS(th)Gate-to-sourcethresholdvoltageVDS=VGS,ID=250μA1.
21.
51.
9VVGS=4.
5V,ID=40A1.
51.
8mrDS(on)Drain-to-sourceon-resistanceVGS=10V,ID=40A0.
991.
15mgfsTransconductanceVDS=15V,ID=40A168SDynamicCharacteristicsCISSInputcapacitance31504100pFCOSSOutputcapacitanceVGS=0V,VDS=12.
5V,f=1MHz25303300pFCRSSReversetransfercapacitance175230pFRgSeriesgateresistance1.
22.
4QgGatechargetotal(4.
5V)2129nCQgdGatecharge,gate-to-drain5.
2nCVDS=12.
5V,ID=40AQgsGatecharge,gate-to-source8.
3nCQg(th)GatechargeatVth4.
8nCQOSSOutputchargeVDS=15V,VGS=0V55nCtd(on)Turnondelaytime16.
6nstrRisetime30nsVDS=12.
5V,VGS=4.
5V,ID=40ARG=2td(off)Turnoffdelaytime20nstfFalltime12.
7nsDiodeCharacteristicsVSDDiodeforwardvoltageIS=40A,VGS=0V0.
851VQrrReverserecoverychargeVDD=15V,IF=40A,di/dt=300A/μs72nCtrrReverserecoverytimeVDD=15V,IF=40A,di/dt=300A/μs45nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalresistance,junction-to-case(1)1.
1°C/WRθJAThermalresistance,junction-to-ambient(1)(2)50°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch(2.
54-cm)square,2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
060-inch(1.
52-mm)thickFR4board.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1inch2(6.
45cm2)of2-oz.
(0.
071-mmthick)Cu.
2Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MaxRθJA=50°C/WMaxRθJA=121°C/Wwhenmountedon1whenmountedoninch2(6.
45cm2)ofminimumpadareaof2-oz.
(0.
071-mmthick)2-oz.
(0.
071-mmthick)Cu.
Cu.
TextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure1.
TransientThermalImpedanceCopyright2011,TexasInstrumentsIncorporated3CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure2.
SaturationCharacteristicsFigure3.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure4.
GateChargeFigure5.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure6.
ThresholdVoltagevs.
TemperatureFigure7.
On-Resistancevs.
GateVoltage4Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure8.
On-Resistancevs.
TemperatureFigure9.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure10.
MaximumSafeOperatingAreaFigure11.
Single-PulseUnclampedInductiveSwitchingTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure12.
MaximumDrainCurrentvs.
TemperatureCopyright2011,TexasInstrumentsIncorporated5CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnMECHANICALDATAQ5PackageDimensionsMILLIMETERSINCHESDIMMINMAXMINMAXA0.
9501.
0500.
0370.
039b0.
3600.
4600.
0140.
018c0.
1500.
2500.
0060.
010c10.
1500.
2500.
0060.
010D14.
9005.
1000.
1930.
201D24.
3204.
5200.
1700.
178E4.
9005.
1000.
1930.
201E15.
9006.
1000.
2320.
240E23.
9204.
120.
1540.
162e1.
27TYP0.
050K0.
7600.
030L0.
5100.
7100.
0200.
028θ0.
006Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MILLIMETERSINCHESDIMFigure13.
RecommendedPCBPatternMINMAXMINMAXF16.
2056.
3050.
2440.
248F24.
4604.
5600.
1760.
180F34.
4604.
5600.
1760.
180F40.
6500.
7000.
0260.
028F50.
6200.
6700.
0240.
026F60.
6300.
6800.
0250.
027F70.
7000.
8000.
0280.
031F80.
6500.
7000.
0260.
028F90.
6200.
6700.
0240.
026F104.
9005.
0000.
1930.
197F114.
4604.
5600.
1760.
180ForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q5TapeandReelInformationNotes:1.
10sprocketholepitchcumulativetolerance±0.
22.
Cambernottoexceed1mmIN100mm,noncumulativeover250mm3.
Material:blackstaticdissipativepolystyrene4.
Alldimensionsareinmm(unlessotherwisespecified)5.
A0andB0measuredonaplane0.
3mmabovethebottomofthepocket6.
MSL1260°C(IRandConvection)PbFReflowCompatibleCopyright2011,TexasInstrumentsIncorporated7PACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD16415Q5ACTIVEVSON-CLIPDQH82500RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415CSD16415Q5TACTIVEVSON-CLIPDQH8250RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsof.
com.
cn/zh-cn/legal/termsofsale.
html)以及ti.
com.
cn上或随附TI产品提供的其他可适用条款的约束.
TI提供所述资源并不扩展或以其他方式更改TI针对TI产品所发布的可适用的担保范围或担保免责声明.
IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2020德州仪器半导体技术(上海)有限公司
BlueHost 周年庆典 - 美国/香港虚拟主机 美国SSD VPS低至月32元
我们对于BlueHost主机商还是比较熟悉的，早年我们还是全民使用虚拟主机的时候，大部分的外贸主机都会用到BlueHost无限虚拟主机方案，那时候他们商家只有一款虚拟主机方案。目前，商家国际款和国内款是有差异营销的，BlueHost国内有提供香港、美国、印度和欧洲机房。包括有提供虚拟主机、VPS和独立服务器。现在，BlueHost 商家周年活动，全场五折优惠。我们看看这次的活动有哪些值得选择的。 ...
Asiayun：枣庄电信Asiayun美国Cera葵湾VPSvps月付,美国CERA VPS月付26元/年
亚洲云Asiayun怎么样?亚洲云成立于2021年，隶属于上海玥悠悠云计算有限公司(Yyyisp)，是一家新国人IDC商家，且正规持证IDC/ISP/CDN，商家主要提供数据中心基础服务、互联网业务解决方案，及专属服务器租用、云服务器、云虚拟主机、专属服务器托管、带宽租用等产品和服务。Asiayun提供源自大陆、香港、韩国和美国等地骨干级机房优质资源，包括BGP国际多线网络，CN2点对点直连带宽以...
半月湾hmbcloud升级500Mbps带宽,原生VPS，$4.99/月
关于半月湾HMBCloud商家之前也有几篇那文章介绍过这个商家的产品，对于他们家的其他产品我都没有多加留意，而是对他们家的DC5机房很多人还是比较喜欢的，这个比我们有些比较熟悉的某商家DC6 DC9机房限时，而且半月湾HMBCloud商家是相对便宜的。关于半月湾DC5机房的方案选择和介绍：1、半月湾三网洛杉矶DC5 CN2 GIA同款DC6 DC9 1G内存 1TB流量 月$4.992、亲测选择半...
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