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CSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER201320VP通通道道NexFET功功率率金金属属氧氧化化物物半半导导体体场场效效应应晶晶体体管管(MOSFET)查查询询样样片片:CSD25402Q3A1特特性性产产品品概概述述2超超低低Qg和和QgdVDS漏源极电压-20V低低热热阻阻Qg栅极电荷总量(-4.
5V)7.
5nC低低RDS(on)Qgd栅极电荷漏极1.
1nCVGS=-1.
8V74mΩ无无铅铅且且无无卤卤素素RDS(on)漏源导通电阻VGS=-2.
5V13.
3mΩ符符合合RoHS环环保保标标准准VGS=-4.
5V7.
7mΩ小小外外形形尺尺寸寸无无引引线线(SON)3.
3mm*3.
3mm塑塑料料封封Vth阀值电压-0.
9V装装订订购购信信息息应应用用范范围围器器件件封封装装介介质质数数量量出出货货直直流流-直直流流转转换换器器SON3*3塑料封13英寸卷CSD25402Q3A2500卷带封装装带电电池池管管理理负负载载开开关关绝绝对对最最大大额额定定值值电电池池保保护护TA=25°C值值单单位位VDS漏源电压-20V说说明明VGS栅源电压+12或-12V这款-20V,7.
7mΩNexFET功率MOSFET被设计持续漏极电流,TC=25°C时测得-72A成最大限度地减少SON3*3封装内的功率转换负载ID持续漏极电流(受封装限制)-35A管理应用中的损耗,此封装类型针对器件的尺寸提供出持续漏极电流(1)-15AIDM脉冲漏极电流(2)-82A色的热性能.
PD功率耗散(1)2.
8W顶顶视视图图TJ,运行结温和储存温度范围-55至150°CTSTG(1)RθJA=55°C/W,这是在厚度为0.
060"的环氧树脂(FR4)印刷电路板(PCB)上的1英寸2铜过渡垫片(2盎司)上测得的典型值.
(2)脉宽≤300μs,占空比≤2%RDS(on)与与VGS间间的的关关系系栅栅极极电电荷荷1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2NexFETisatrademarkofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
版权2013,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLPS454necessarilyincludetestingofallparameters.
CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDrain-to-SourceVoltageVGS=0V,ID=–250μA–20VIDSSDrain-to-SourceLeakageCurrentVGS=0V,VDS=–16V–1μAIGSSGate-to-SourceLeakageCurrentVDS=0V,VGS=±12V–100nAVGS(th)Gate-to-SourceThresholdVoltageVDS=VGS,ID=–250μA–0.
65–0.
90–1.
15VVGS=–1.
8V,ID=–1A74300mRDS(on)Drain-to-SourceOnResistanceVGS=–2.
5V,ID=–10A13.
315.
9mVGS=–4.
5V,ID=–10A7.
78.
9mgfsTransconductanceVDS=–10V,ID=–10A59SDynamicCharacteristicsCISSInputCapacitance13801790pFVGS=0V,VDS=–10V,COSSOutputCapacitance763992pFf=1MHzCRSSReverseTransferCapacitance3951pFRGSeriesGateResistance3.
77.
4QgGateChargeTotal(4.
5V)7.
59.
7nCQgdGateChargeGatetoDrain1.
1nCVDS=–10V,ID=–10AQgsGateChargeGatetoSource2.
4nCQg(th)GateChargeatVth1.
0nCQOSSOutputChargeVDS=–10V,VGS=0V7.
6nCtd(on)TurnOnDelayTime10nstrRiseTime7nsVDS=–10V,VGS=–4.
5V,ID=–10A,RG=5td(off)TurnOffDelayTime25nstfFallTime12nsDiodeCharacteristicsVSDDiodeForwardVoltageIS=–10A,VGS=0V–0.
8–1VQrrReverseRecoveryCharge10.
3nCVDS=–8.
5V,IF=–10A,di/dt=200A/μstrrReverseRecoveryTime21nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalResistanceJunctiontoCase(1)2.
3°C/WRθJAThermalResistanceJunctiontoAmbient(1)(2)55°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
06-inch(1.
52-mm)thickFR4PCB.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cu.
2Copyright2013,TexasInstrumentsIncorporatedCSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER2013MaxRθJA=175°C/WMaxRθJA=55°C/Wwhenmountedonwhenmountedonminimumpadareaof1inch2of2oz.
Cu.
2oz.
Cu.
TYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure1.
TransientThermalImpedanceCopyright2013,TexasInstrumentsIncorporated3CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure2.
SaturationCharacteristicsFigure3.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure4.
GateChargeFigure5.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure6.
ThresholdVoltagevs.
TemperatureFigure7.
On-StateResistancevs.
Gate-to-SourceVoltage4Copyright2013,TexasInstrumentsIncorporatedCSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER2013TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure8.
NormalizedOn-StateResistancevs.
TemperatureFigure9.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure10.
MaximumSafeOperatingAreaFigure11.
MaximumDrainCurrentvs.
TemperatureCopyright2013,TexasInstrumentsIncorporated5CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnMECHANICALDATAQ3APackageDimensions6Copyright2013,TexasInstrumentsIncorporatedCSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER2013Q3ARecommendedPCBPatternForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q3ARecommendedStencilPatternCopyright2013,TexasInstrumentsIncorporated7CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnQ3ATapeandReelInformationNotes:1.
10-sprockethole-pitchcumulativetolerance±0.
22.
Cambernottoexceed1mmin100mm,noncumulativeover250mm3.
Material:blackstatic-dissipativepolystyrene4.
Alldimensionsareinmm,unlessotherwisespecified5.
Thickness:0.
30±0.
05mm6.
MSL1260°C(IRandconvection)PbFreflowcompatible8Copyright2013,TexasInstrumentsIncorporatedPACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD25402Q3AACTIVEVSONPDNH82500RoHS&GreenSNLevel-1-260C-UNLIM-55to15025402CSD25402Q3ATACTIVEVSONPDNH8250RoHS&GreenSNLevel-1-260C-UNLIM-55to15025402(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsof.
com.
cn/zh-cn/legal/termsofsale.
html)以及ti.
com.
cn上或随附TI产品提供的其他可适用条款的约束.
TI提供所述资源并不扩展或以其他方式更改TI针对TI产品所发布的可适用的担保范围或担保免责声明.
IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2020德州仪器半导体技术(上海)有限公司
ti.
com.
cnZHCSBY6–DECEMBER201320VP通通道道NexFET功功率率金金属属氧氧化化物物半半导导体体场场效效应应晶晶体体管管(MOSFET)查查询询样样片片:CSD25402Q3A1特特性性产产品品概概述述2超超低低Qg和和QgdVDS漏源极电压-20V低低热热阻阻Qg栅极电荷总量(-4.
5V)7.
5nC低低RDS(on)Qgd栅极电荷漏极1.
1nCVGS=-1.
8V74mΩ无无铅铅且且无无卤卤素素RDS(on)漏源导通电阻VGS=-2.
5V13.
3mΩ符符合合RoHS环环保保标标准准VGS=-4.
5V7.
7mΩ小小外外形形尺尺寸寸无无引引线线(SON)3.
3mm*3.
3mm塑塑料料封封Vth阀值电压-0.
9V装装订订购购信信息息应应用用范范围围器器件件封封装装介介质质数数量量出出货货直直流流-直直流流转转换换器器SON3*3塑料封13英寸卷CSD25402Q3A2500卷带封装装带电电池池管管理理负负载载开开关关绝绝对对最最大大额额定定值值电电池池保保护护TA=25°C值值单单位位VDS漏源电压-20V说说明明VGS栅源电压+12或-12V这款-20V,7.
7mΩNexFET功率MOSFET被设计持续漏极电流,TC=25°C时测得-72A成最大限度地减少SON3*3封装内的功率转换负载ID持续漏极电流(受封装限制)-35A管理应用中的损耗,此封装类型针对器件的尺寸提供出持续漏极电流(1)-15AIDM脉冲漏极电流(2)-82A色的热性能.
PD功率耗散(1)2.
8W顶顶视视图图TJ,运行结温和储存温度范围-55至150°CTSTG(1)RθJA=55°C/W,这是在厚度为0.
060"的环氧树脂(FR4)印刷电路板(PCB)上的1英寸2铜过渡垫片(2盎司)上测得的典型值.
(2)脉宽≤300μs,占空比≤2%RDS(on)与与VGS间间的的关关系系栅栅极极电电荷荷1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2NexFETisatrademarkofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
版权2013,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLPS454necessarilyincludetestingofallparameters.
CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDrain-to-SourceVoltageVGS=0V,ID=–250μA–20VIDSSDrain-to-SourceLeakageCurrentVGS=0V,VDS=–16V–1μAIGSSGate-to-SourceLeakageCurrentVDS=0V,VGS=±12V–100nAVGS(th)Gate-to-SourceThresholdVoltageVDS=VGS,ID=–250μA–0.
65–0.
90–1.
15VVGS=–1.
8V,ID=–1A74300mRDS(on)Drain-to-SourceOnResistanceVGS=–2.
5V,ID=–10A13.
315.
9mVGS=–4.
5V,ID=–10A7.
78.
9mgfsTransconductanceVDS=–10V,ID=–10A59SDynamicCharacteristicsCISSInputCapacitance13801790pFVGS=0V,VDS=–10V,COSSOutputCapacitance763992pFf=1MHzCRSSReverseTransferCapacitance3951pFRGSeriesGateResistance3.
77.
4QgGateChargeTotal(4.
5V)7.
59.
7nCQgdGateChargeGatetoDrain1.
1nCVDS=–10V,ID=–10AQgsGateChargeGatetoSource2.
4nCQg(th)GateChargeatVth1.
0nCQOSSOutputChargeVDS=–10V,VGS=0V7.
6nCtd(on)TurnOnDelayTime10nstrRiseTime7nsVDS=–10V,VGS=–4.
5V,ID=–10A,RG=5td(off)TurnOffDelayTime25nstfFallTime12nsDiodeCharacteristicsVSDDiodeForwardVoltageIS=–10A,VGS=0V–0.
8–1VQrrReverseRecoveryCharge10.
3nCVDS=–8.
5V,IF=–10A,di/dt=200A/μstrrReverseRecoveryTime21nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalResistanceJunctiontoCase(1)2.
3°C/WRθJAThermalResistanceJunctiontoAmbient(1)(2)55°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
06-inch(1.
52-mm)thickFR4PCB.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cu.
2Copyright2013,TexasInstrumentsIncorporatedCSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER2013MaxRθJA=175°C/WMaxRθJA=55°C/Wwhenmountedonwhenmountedonminimumpadareaof1inch2of2oz.
Cu.
2oz.
Cu.
TYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure1.
TransientThermalImpedanceCopyright2013,TexasInstrumentsIncorporated3CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure2.
SaturationCharacteristicsFigure3.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure4.
GateChargeFigure5.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure6.
ThresholdVoltagevs.
TemperatureFigure7.
On-StateResistancevs.
Gate-to-SourceVoltage4Copyright2013,TexasInstrumentsIncorporatedCSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER2013TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure8.
NormalizedOn-StateResistancevs.
TemperatureFigure9.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure10.
MaximumSafeOperatingAreaFigure11.
MaximumDrainCurrentvs.
TemperatureCopyright2013,TexasInstrumentsIncorporated5CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnMECHANICALDATAQ3APackageDimensions6Copyright2013,TexasInstrumentsIncorporatedCSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER2013Q3ARecommendedPCBPatternForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q3ARecommendedStencilPatternCopyright2013,TexasInstrumentsIncorporated7CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnQ3ATapeandReelInformationNotes:1.
10-sprockethole-pitchcumulativetolerance±0.
22.
Cambernottoexceed1mmin100mm,noncumulativeover250mm3.
Material:blackstatic-dissipativepolystyrene4.
Alldimensionsareinmm,unlessotherwisespecified5.
Thickness:0.
30±0.
05mm6.
MSL1260°C(IRandconvection)PbFreflowcompatible8Copyright2013,TexasInstrumentsIncorporatedPACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD25402Q3AACTIVEVSONPDNH82500RoHS&GreenSNLevel-1-260C-UNLIM-55to15025402CSD25402Q3ATACTIVEVSONPDNH8250RoHS&GreenSNLevel-1-260C-UNLIM-55to15025402(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsof.
com.
cn/zh-cn/legal/termsofsale.
html)以及ti.
com.
cn上或随附TI产品提供的其他可适用条款的约束.
TI提供所述资源并不扩展或以其他方式更改TI针对TI产品所发布的可适用的担保范围或担保免责声明.
IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2020德州仪器半导体技术(上海)有限公司
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