栅极.com.cn
.com.cn 时间:2021-05-25 阅读:(
)
CSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER201320VP通通道道NexFET功功率率金金属属氧氧化化物物半半导导体体场场效效应应晶晶体体管管(MOSFET)查查询询样样片片:CSD25402Q3A1特特性性产产品品概概述述2超超低低Qg和和QgdVDS漏源极电压-20V低低热热阻阻Qg栅极电荷总量(-4.
5V)7.
5nC低低RDS(on)Qgd栅极电荷漏极1.
1nCVGS=-1.
8V74mΩ无无铅铅且且无无卤卤素素RDS(on)漏源导通电阻VGS=-2.
5V13.
3mΩ符符合合RoHS环环保保标标准准VGS=-4.
5V7.
7mΩ小小外外形形尺尺寸寸无无引引线线(SON)3.
3mm*3.
3mm塑塑料料封封Vth阀值电压-0.
9V装装订订购购信信息息应应用用范范围围器器件件封封装装介介质质数数量量出出货货直直流流-直直流流转转换换器器SON3*3塑料封13英寸卷CSD25402Q3A2500卷带封装装带电电池池管管理理负负载载开开关关绝绝对对最最大大额额定定值值电电池池保保护护TA=25°C值值单单位位VDS漏源电压-20V说说明明VGS栅源电压+12或-12V这款-20V,7.
7mΩNexFET功率MOSFET被设计持续漏极电流,TC=25°C时测得-72A成最大限度地减少SON3*3封装内的功率转换负载ID持续漏极电流(受封装限制)-35A管理应用中的损耗,此封装类型针对器件的尺寸提供出持续漏极电流(1)-15AIDM脉冲漏极电流(2)-82A色的热性能.
PD功率耗散(1)2.
8W顶顶视视图图TJ,运行结温和储存温度范围-55至150°CTSTG(1)RθJA=55°C/W,这是在厚度为0.
060"的环氧树脂(FR4)印刷电路板(PCB)上的1英寸2铜过渡垫片(2盎司)上测得的典型值.
(2)脉宽≤300μs,占空比≤2%RDS(on)与与VGS间间的的关关系系栅栅极极电电荷荷1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2NexFETisatrademarkofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
版权2013,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLPS454necessarilyincludetestingofallparameters.
CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDrain-to-SourceVoltageVGS=0V,ID=–250μA–20VIDSSDrain-to-SourceLeakageCurrentVGS=0V,VDS=–16V–1μAIGSSGate-to-SourceLeakageCurrentVDS=0V,VGS=±12V–100nAVGS(th)Gate-to-SourceThresholdVoltageVDS=VGS,ID=–250μA–0.
65–0.
90–1.
15VVGS=–1.
8V,ID=–1A74300mRDS(on)Drain-to-SourceOnResistanceVGS=–2.
5V,ID=–10A13.
315.
9mVGS=–4.
5V,ID=–10A7.
78.
9mgfsTransconductanceVDS=–10V,ID=–10A59SDynamicCharacteristicsCISSInputCapacitance13801790pFVGS=0V,VDS=–10V,COSSOutputCapacitance763992pFf=1MHzCRSSReverseTransferCapacitance3951pFRGSeriesGateResistance3.
77.
4QgGateChargeTotal(4.
5V)7.
59.
7nCQgdGateChargeGatetoDrain1.
1nCVDS=–10V,ID=–10AQgsGateChargeGatetoSource2.
4nCQg(th)GateChargeatVth1.
0nCQOSSOutputChargeVDS=–10V,VGS=0V7.
6nCtd(on)TurnOnDelayTime10nstrRiseTime7nsVDS=–10V,VGS=–4.
5V,ID=–10A,RG=5td(off)TurnOffDelayTime25nstfFallTime12nsDiodeCharacteristicsVSDDiodeForwardVoltageIS=–10A,VGS=0V–0.
8–1VQrrReverseRecoveryCharge10.
3nCVDS=–8.
5V,IF=–10A,di/dt=200A/μstrrReverseRecoveryTime21nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalResistanceJunctiontoCase(1)2.
3°C/WRθJAThermalResistanceJunctiontoAmbient(1)(2)55°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
06-inch(1.
52-mm)thickFR4PCB.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cu.
2Copyright2013,TexasInstrumentsIncorporatedCSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER2013MaxRθJA=175°C/WMaxRθJA=55°C/Wwhenmountedonwhenmountedonminimumpadareaof1inch2of2oz.
Cu.
2oz.
Cu.
TYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure1.
TransientThermalImpedanceCopyright2013,TexasInstrumentsIncorporated3CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure2.
SaturationCharacteristicsFigure3.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure4.
GateChargeFigure5.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure6.
ThresholdVoltagevs.
TemperatureFigure7.
On-StateResistancevs.
Gate-to-SourceVoltage4Copyright2013,TexasInstrumentsIncorporatedCSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER2013TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure8.
NormalizedOn-StateResistancevs.
TemperatureFigure9.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure10.
MaximumSafeOperatingAreaFigure11.
MaximumDrainCurrentvs.
TemperatureCopyright2013,TexasInstrumentsIncorporated5CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnMECHANICALDATAQ3APackageDimensions6Copyright2013,TexasInstrumentsIncorporatedCSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER2013Q3ARecommendedPCBPatternForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q3ARecommendedStencilPatternCopyright2013,TexasInstrumentsIncorporated7CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnQ3ATapeandReelInformationNotes:1.
10-sprockethole-pitchcumulativetolerance±0.
22.
Cambernottoexceed1mmin100mm,noncumulativeover250mm3.
Material:blackstatic-dissipativepolystyrene4.
Alldimensionsareinmm,unlessotherwisespecified5.
Thickness:0.
30±0.
05mm6.
MSL1260°C(IRandconvection)PbFreflowcompatible8Copyright2013,TexasInstrumentsIncorporatedPACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD25402Q3AACTIVEVSONPDNH82500RoHS&GreenSNLevel-1-260C-UNLIM-55to15025402CSD25402Q3ATACTIVEVSONPDNH8250RoHS&GreenSNLevel-1-260C-UNLIM-55to15025402(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsof.
com.
cn/zh-cn/legal/termsofsale.
html)以及ti.
com.
cn上或随附TI产品提供的其他可适用条款的约束.
TI提供所述资源并不扩展或以其他方式更改TI针对TI产品所发布的可适用的担保范围或担保免责声明.
IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2020德州仪器半导体技术(上海)有限公司
易探云香港vps主机价格多少钱?香港vps主机租用费用大体上是由配置决定的,我们选择香港vps主机租用最大的优势是免备案vps。但是,每家服务商的机房、配置、定价也不同。我们以最基础配置为标准,综合比对各大香港vps主机供应商的价格,即可选到高性能、价格适中的香港vps主机。通常1核CPU、1G内存、2Mbps独享带宽,价格在30元-120元/月。不过,易探云香港vps主机推出四个机房的优惠活动,...
点击进入亚云官方网站(www.asiayun.com)公司名:上海玥悠悠云计算有限公司成都铂金宿主机IO测试图亚洲云Asiayun怎么样?亚洲云Asiayun好不好?亚云由亚云团队运营,拥有ICP/ISP/IDC/CDN等资质,亚云团队成立于2018年,经过多次品牌升级。主要销售主VPS服务器,提供云服务器和物理服务器,机房有成都、美国CERA、中国香港安畅和电信,香港提供CN2 GIA线路,CE...
SugarHosts 糖果主机商我们算是比较熟悉的,早年学会建站的时候开始就用的糖果虚拟主机,目前他们家还算是为数不多提供虚拟主机的商家,有提供香港、美国、德国等虚拟主机机房。香港机房CN2速度比较快,美国机房有提供优化线路和普通线路适合外贸业务。德国欧洲机房适合欧洲业务的虚拟主机。糖果主机商一般是不会发布黑五活动的,他们在圣圣诞节促销活动是有的,我们看到糖果主机商发布的圣诞节促销虚拟主机低至6折...
.com.cn为你推荐
竞赛winrar5您的iphone张女士苹果5《个人收入的分配过关检测》勒索病毒win7补丁win7有针对勒索病毒的补丁吗用itunes备份如何用iTunes备份iPhone数据iphonewifi苹果手机突然用不了Wi-Fi了google图片搜索谁能教我怎么在手机用google的图片搜索啊!!!googleadsense我申请Google AdSense要怎样才能通过Google AdSense呀?css选择器css有哪些选择器
域名到期查询 VPS之家 中文域名交易中心 t楼 贵州电信宽带测速 淘宝双十一2018 天猫双十一抢红包 双十一秒杀 东莞数据中心 爱奇艺vip免费试用7天 wordpress中文主题 大化网 国外免费网盘 日本小学生 9929 赵荣 主机箱 远程主机强迫关闭了一个现有的连接 海康流媒体服务器 suspended翻译 更多