1SEMICONDUCTORSSUMMARYBVCEO=60V:RSAT=34m;IC=4.
5ADESCRIPTIONPackagedintheE-lineoutlinethisnew5thgenerationlowsaturation60VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions.
FEATURESExtemelylowequivalenton-resistance;RSAT=34mat5A4.
5ampscontinuouscurrentUpto15ampspeakcurrentVerylowsaturationvoltagesAPPLICATIONSEmergencylightingcircuitsMotordriving(includingDCfans)Solenoid,relayandactuatordriversDCmodulesBacklightinvertersDEVICEMARKINGX5T851ZX5T851AISSUE1-NOVEMBER200360VNPNLOWSATURATIONMEDIUMPOWERTRANSISTORINE-LINEDEVICEQUANTITYZX5T851ASTOAZX5T851ASTZ2000units/reel2000units/cartonORDERINGINFORMATIONPINOUTE-LINEZX5T851ASEMICONDUCTORSISSUE1-NOVEMBER20032PARAMETERSYMBOLVALUEUNITJunctiontoambient(a)RJA125°C/WJunctiontoambient(b)RJA175°C/WNOTES(a)Foradevicethroughholemountedon25mmx25mmx1.
6mmFR4PCBwithhighcoverageofsinglesided1ozcopper,instillairconditions.
Collectorleadlengthtosolderpoint4mm.
(bForadevicemountedinasocketinstillairconditions.
Collectorleadlength10mm.
THERMALRESISTANCEPARAMETERSYMBOLLIMITUNITCollector-basevoltageBVCBO150VCollector-emittervoltageBVCEO60VEmitter-basevoltageBVEBO7VContinuouscollectorcurrent(a)IC4.
5APeakpulsecurrentICM15APracticalpowerdissipation(a)LinearderatingfactorPD1.
08WmW/°CPowerdissipationatTA=25°C(b)LinearderatingfactorPD0.
715.
7WmW/°COperatingandstoragetemperaturerangeTj,Tstg-55to+150°CABSOLUTEMAXIMUMRATINGSZX5T851ASEMICONDUCTORSISSUE1-NOVEMBER20033CHARACTERISTICSZX5T851ASEMICONDUCTORSISSUE1-NOVEMBER20034PARAMETERSYMBOLMIN.
TYP.
MAX.
UNITCONDITIONSCollector-basebreakdownvoltageBVCBO150190VIC=100ACollector-emitterbreakdownvoltageBVCER150190VIC=1A,RB1kCollector-emitterbreakdownvoltageBVCEO6080VIC=10mA*Emitter-basebreakdownvoltageBVEBO78.
1VIE=100ACollectorcut-offcurrentICBO200.
5nAAVCB=120VVCB=120V,Tamb=100CCollectorcut-offcurrentICERR1k200.
5nAAVCB=120VVCB=120V,Tamb=100CEmittercut-offcurrentIEBO10nAVEB=6VCollector-emittersaturationvoltageVCE(SAT)18404595170305565130210mVmVmVmVmVIC=100mA,IB=5mA*IC=1A,IB=100mA*IC=1A,IB=50mA*IC=2A,IB=50mA*IC=5A,IB=200mA*Base-emittersaturationvoltageVBE(SAT)9501050mVIC=4A,IB=200mA*Base-emitterturn-onvoltageVBE(ON)840950mVIC=4A,VCE=1V*StaticforwardcurrenttransferratiohFE100100552020020010540300IC=10mA,VCE=1V*IC=2A,VCE=1V*IC=5A,VCE=1V*IC=10A,VCE=1V*TransitionfrequencyfT130MHzIC=100mA,VCE=10Vf=50MHzOutputcapacitanceCOBO31pFVCB=10V,f=1MHz*SwitchingtimestONtOFF42760nsnsIC=1A,VCC=10V,IB1=IB2=100mAELECTRICALCHARACTERISTICS(atTamb=25°Cunlessotherwisestated)*Measuredunderpulsedconditions.
Pulsewidth300s;dutycycle2%.
ZX5T851ASEMICONDUCTORSISSUE1-NOVEMBER20035TYPICALCHARACTERISTICSZX5T851ASEMICONDUCTORS6ISSUE1-NOVEMBER2003EuropeZetexplcFieldsNewRoadChaddertonOldham,OL98NPUnitedKingdomTelephone(44)1616224444Fax:(44)1616224446hq@zetex.
comZetexGmbHStreitfeldstrae19D-81673MünchenGermanyTelefon:(49)894549490Fax:(49)8945494949europe.
sales@zetex.
comAmericasZetexInc700VeteransMemorialHwyHauppauge,NY11788USATelephone:(1)6313602222Fax:(1)6313608222usa.
sales@zetex.
comAsiaPacificZetex(Asia)Ltd3701-04MetroplazaTower1HingFongRoadKwaiFongHongKongTelephone:(852)26100611Fax:(852)24250494asia.
sales@zetex.
comTheseofficesaresupportedbyagentsanddistributorsinmajorcountriesworld-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproducedforanypurposeorformpartofanyorderorcontractorberegardedasarepresentationrelatingtotheproductsorservicesconcerned.
TheCompanyreservestherighttoalterwithoutnoticethespecification,design,priceorconditionsofsupplyofanyproductorservice.
Forthelatestproductinformation,logontowww.
zetex.
comZetexplc2003PACKAGEOUTLINEControllingdimensionsareinmillimeters.
ApproximateconversionsaregivenininchesDIMMillimetersInchesMinMaxMinMaxA0.
410.
4950.
0160.
0195B0.
410.
4950.
0160.
0195C3.
614.
010.
1420.
158D4.
374.
770.
1720.
188E2.
162.
410.
0850.
095F—2.
50—0.
098G1.
27NOM0.
050NOML13.
0013.
970.
5120.
550PACKAGEDIMENSIONS
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