average苹果5.1.1完美越狱

苹果5.1.1完美越狱  时间:2021-05-24  阅读:()
MSE1PB,MSE1PD,MSE1PG,MSE1PJwww.
vishay.
comVishayGeneralSemiconductorRevision:03-May-20181DocumentNumber:89067Fortechnicalquestionswithinyourregion:DiodesAmericas@vishay.
com,DiodesAsia@vishay.
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THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000SurfaceMountESDCapabilityRectifierDESIGNSUPPORTTOOLSFEATURESVerylowprofile-typicalheightof0.
65mmIdealforautomatedplacementOxideplanarchipjunctionLowforwardvoltagedrop,lowleakagecurrentESDcapabilityMeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°CAEC-Q101qualifiedavailable-Automotiveorderingcode:baseP/NHM3Materialcategorization:fordefinitionsofcompliancepleaseseewww.
vishay.
com/doc99912TYPICALAPPLICATIONSGeneralpurpose,polarityprotection,andrail-to-railprotectioninbothconsumerandautomotiveapplications.
MECHANICALDATACase:MicroSMP(DO-219AD)MoldingcompoundmeetsUL94V-0flammabilityratingBaseP/N-M3-halogen-free,RoHS-compliant,andcommercialgradeBaseP/NHM3-halogen-free,RoHS-compliant,andAEC-Q101qualifiedTerminals:mattetinplatedleads,solderableperJ-STD-002andJESD22-B102M3andHM3suffixmeetsJESD201class2whiskertestPolarity:colorbanddenotesthecathodeendPRIMARYCHARACTERISTICSIF(AV)1.
0AVRRM100V,200V,400V,600VIFSM20AVFatIF=1.
0A0.
925VIR1μATJmax.
175°CPackageMicroSMP(DO-219AD)CircuitconfigurationSingleMicroSMP(DO-219AD)eSMPSeriesTopViewBottomViewCathodeAnodeclicklogotogetstartedAvailableModelsAvailableMAXIMUMRATINGS(TA=25°C,unlessotherwisenoted)PARAMETERSYMBOLMSE1PBMSE1PDMSE1PGMSE1PJUNITDevicemarkingcodeSBSDSGSJMax.
repetitivepeakreversevoltageVRRM100200400600VMax.
averageforwardrectifiedcurrent(fig.
1)IF(AV)1.
0APeakforwardsurgecurrent10mssinglehalfsine-wavesuperimposedonratedloadIFSM20AOperatingjunctionandstoragetemperaturerangeTJ,TSTG-55to+175°CMSE1PB,MSE1PD,MSE1PG,MSE1PJwww.
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comVishayGeneralSemiconductorRevision:03-May-20182DocumentNumber:89067Fortechnicalquestionswithinyourregion:DiodesAmericas@vishay.
com,DiodesAsia@vishay.
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THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000Notes(1)Pulsetest:300μspulsewidth,1%dutycycle(2)Pulsetest:Pulsewidth40msNote(1)ThermalresistancefromjunctiontoambientandjunctiontoleadmountedonPCBwith6.
0mmx6.
0mmcopperpadareas.
RJLismeasuredattheterminalofcathodeband.
Notes(1)ImmunitytoIEC61000-4-2airdischargemodehasatypicalperformance>30kV(2)SystemESDstandardNote(1)AEC-Q101qualifiedELECTRICALCHARACTERISTICS(TA=25°C,unlessotherwisenoted)PARAMETERTESTCONDITIONSSYMBOLTYP.
MAX.
UNITMax.
instantaneousforwardvoltageIF=0.
5ATA=25°CVF(1)0.
940-VIF=1.
0A1.
0161.
1IF=0.
5ATA=125°C0.
834-IF=1.
0A0.
9250.
98Max.
reversecurrentRatedVRTA=25°CIR(2)-1.
0μATA=125°C3.
750TypicalreverserecoverytimeIF=0.
5A,IR=1.
0A,Irr=0.
25Atrr780-nsTypicaljunctioncapacitance4.
0V,1MHzCJ5-pFTHERMALCHARACTERISTICS(TA=25°C,unlessotherwisenoted)PARAMETERSYMBOLMSE1PBMSE1PDMSE1PGMSE1PJUNITTypicalthermalresistanceRJA(1)110°C/WRJL(1)30RJC(1)40IMMUNITYTOELECTRICALSTATICDISCHARGETOTHEFOLLOWINGSTANDARDS(TA=25°C,unlessotherwisenoted)STANDARDTESTTYPETESTCONDITIONSSYMBOLCLASSVALUEAEC-Q101-001Humanbodymodel(contactmode)C=100pF,R=1.
5kVCH3B>8kVAEC-Q101-002Machinemodel(contactmode)C=200pF,R=0M4>400VJESD22-A114Humanbodymodel(contactmode)C=100pF,R=1.
5k3B>8kVJESD22-A115Machinemodel(contactmode)C=200pF,R=0C>400VIEC61000-4-2(2)Humanbodymodel(contactmode)C=150pF,R=3304>8kVHumanbodymodel(air-dischargemode)(1)C=150pF,R=3304>15kVORDERINGINFORMATION(Example)PREFERREDP/NUNITWEIGHT(g)PREFERREDPACKAGECODEBASEQUANTITYDELIVERYMODEMSE1PJ-M3/89A0.
00689A45007"diameterplastictapeandreelMSE1PJHM3/89A(1)0.
00689A45007"diameterplastictapeandreelMSE1PB,MSE1PD,MSE1PG,MSE1PJwww.
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comVishayGeneralSemiconductorRevision:03-May-20183DocumentNumber:89067Fortechnicalquestionswithinyourregion:DiodesAmericas@vishay.
com,DiodesAsia@vishay.
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comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000RATINGSANDCHARACTERISTICSCURVES(TA=25°Cunlessotherwisenoted)Fig.
1-ForwardCurrentDeratingCurveFig.
2-ForwardPowerLossCharacteristicsFig.
3-TypicalInstantaneousForwardCharacteristicsFig.
4-TypicalReverseLeakageCharacteristicsFig.
5-TypicalJunctionCapacitanceFig.
6-TypicalTransientThermalImpedance00.
20.
40.
60.
81.
01.
295105115125135145165175155LeadTemperature(°C)AverageForwardRectifiedCurrent(A)TLMeasuredattheCathodeBandTerminal00.
20.
40.
60.
81.
01.
200.
20.
40.
81.
01.
20.
6AverageForwardCurrent(A)AveragePowerLoss(W)D=tp/TtpTD=0.
1D=0.
2D=0.
3D=0.
5D=0.
8D=1.
00.
010.
111000.
40.
81.
21.
62.
02.
4InstantaneousForwardCurrent(A)InstantaneousForwardVoltage(V)TJ=150°CTJ=25°CTJ=125°CTJ=75°CTJ=-40°CTJ=175°CTJ=100°C1001010.
10.
001102030405060708090100PercentofRatedPeakReverseVoltage(%)InstantaneousReverseCurrent(μA)0.
01TJ=150°CTJ=125°CTJ=25°CTJ=75°CTJ=100°CTJ=175°CReverseVoltage(V)JunctionCapacitance(pF)1010.
1110100t-PulseDuration(s)100010.
0111010001000.
110010TransientThermalImpedance(°C/W)JunctiontoAmbientMSE1PB,MSE1PD,MSE1PG,MSE1PJwww.
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comVishayGeneralSemiconductorRevision:03-May-20184DocumentNumber:89067Fortechnicalquestionswithinyourregion:DiodesAmericas@vishay.
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THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000PACKAGEOUTLINEDIMENSIONSininches(millimeters)0.
106(2.
70)0.
091(2.
30)0.
055(1.
40)0.
047(1.
20)CathodeBandMicroSMP(DO-219AD)0.
030(0.
75)0.
022(0.
55)0.
030(0.
75)0.
022(0.
55)0.
059(1.
50)0.
043(1.
10)0.
039(0.
98)0.
031(0.
78)0.
091(2.
30)0.
083(2.
10)0.
020(0.
50)0.
043(1.
10)0.
011(0.
27)0.
005(0.
12)0.
079(2.
00)0.
032(0.
80)0.
032(0.
80)MountingPadLayout0.
029(0.
73)0.
025(0.
63)LegalDisclaimerNoticewww.
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