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APTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com1–81413Q1Q2238227CR1CR2302932426327311615R1AllmultipleinputsandoutputsmustbeshortedtogetherExample:13/14;29/30;22/23…Allratings@Tj=25°CunlessotherwisespecifiedAbsolutemaximumratings(persuperjunctionMOSFET)TheseDevicesaresensitivetoElectrostaticDischarge.
ProperHandlingProceduresShouldBeFollowed.
SymbolParameterMaxratingsUnitVDSSDrain-SourceVoltage600VIDContinuousDrainCurrentTc=25°C95ATc=80°C70IDMPulsedDraincurrent260VGSGate-SourceVoltage±20VRDSonDrain-SourceONResistance24mPDPowerDissipationTc=25°C462WIARAvalanchecurrent(repetitiveandnonrepetitive)15AEARRepetitiveAvalancheEnergy3mJEASSinglePulseAvalancheEnergy1900ApplicationACandDCmotorcontrolSwitchedModePowerSuppliesPowerFactorCorrectionFeaturesSuperjunctionMOSFET-UltralowRDSon-LowMillercapacitance-Ultralowgatecharge-Avalancheenergyrated-VeryruggedKelvinsourceforeasydriveVerylowstrayinductanceInternalthermistorfortemperaturemonitoringBenefitsOutstandingperformanceathighfrequencyoperationDirectmountingtoheatsink(isolatedpackage)LowjunctiontocasethermalresistanceSolderableterminalsbothforpowerandsignalforeasyPCBmountingLowprofileEachlegcanbeeasilyparalleledtoachieveasingleBoostoftwicethecurrentcapabilityRoHSCompliantDualboostchopperSuperJunctionMOSFETPowerModuleVDSS=600VRDSon=24mmax@Tj=25°CID=95A@Tc=25°CAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com2–8ElectricalCharacteristics(persuperjunctionMOSFET)SymbolCharacteristicTestConditionsMinTypMaxUnitIDSSZeroGateVoltageDrainCurrentVGS=0V,VDS=600V350ARDS(on)Drain–SourceonResistanceVGS=10V,ID=47.
5A24mVGS(th)GateThresholdVoltageVGS=VDS,ID=5mA2.
133.
9VIGSSGate–SourceLeakageCurrentVGS=±20V,VDS=0V200nADynamicCharacteristics(persuperjunctionMOSFET)SymbolCharacteristicTestConditionsMinTypMaxUnitCissInputCapacitanceVGS=0V;VDS=25Vf=1MHz14.
4nFCossOutputCapacitance17QgTotalgateChargeVGS=10VVBus=300VID=95A300nCQgsGate–SourceCharge68QgdGate–DrainCharge102Td(on)Turn-onDelayTimeInductiveSwitching(125°C)VGS=10VVBus=400VID=95ARG=2.
521nsTrRiseTime30Td(off)Turn-offDelayTime100TfFallTime45EonTurn-onSwitchingEnergyInductiveswitching@25°CVGS=10V;VBus=400VID=95A;RG=2.
51350JEoffTurn-offSwitchingEnergy1040EonTurn-onSwitchingEnergyInductiveswitching@125°CVGS=10V;VBus=400VID=95A;RG=2.
52200JEoffTurn-offSwitchingEnergy1270RthJCJunctiontoCaseThermalResistance0.
27°C/WChopperdioderatingsandcharacteristics(perdiode)SymbolCharacteristicTestConditionsMinTypMaxUnitVRRMPeakRepetitiveReverseVoltage600VIRMReverseLeakageCurrentVR=600V100AIFDCForwardCurrentTc=80°C100AVFDiodeForwardVoltageIF=100A1.
62VIF=200A2IF=100ATj=125°C1.
3trrReverseRecoveryTimeIF=100AVR=400Vdi/dt=200A/sTj=25°C160nsTj=125°C220QrrReverseRecoveryChargeTj=25°C290nCTj=125°C1530RthJCJunctiontoCaseThermalResistance0.
55°C/WAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com3–8ThermalandpackagecharacteristicsSymbolCharacteristicMinMaxUnitVISOLRMSIsolationVoltage,anyterminaltocaset=1min,50/60Hz4000VTJOperatingjunctiontemperaturerange-40150°CTJOPRecommendedjunctiontemperatureunderswitchingconditions-40TJmax-25TSTGStorageTemperatureRange-40125TCOperatingCaseTemperature-40125TorqueMountingtorqueToheatsinkM423N.
mWtPackageWeight110gTemperaturesensorNTC(seeapplicationnoteAPT0406onwww.
microsemi.
comformoreinformation).
SymbolCharacteristicMinTypMaxUnitR25Resistance@25°C50kR25/R255%B25/85T25=298.
15K3952KB/BTC=100°C4%TTBRRT11exp2585/2525Packageoutline(dimensionsinmm)Seeapplicationnote1906-MountingInstructionsforSP3FPowerModulesonwww.
microsemi.
comT:ThermistortemperatureRT:ThermistorvalueatTAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com4–8TypicalSuperjunctionMOSFETPerformanceCurve0.
90.
70.
50.
30.
10.
05SinglePulse00.
050.
10.
150.
20.
250.
30.
000010.
00010.
0010.
010.
1110rectangularPulseDuration(Seconds)ThermalImpedance(°C/W)MaximumEffectiveTransientThermalImpedance,JunctiontoCasevsPulseDuration4V4.
5V5V5.
5V6V6.
5V0801602403204004805606407200510152025VDS,DraintoSourceVoltage(V)ID,DrainCurrent(A)VGS=15&10VLowVoltageOutputCharacteristicsTransfertCharacteristicsTJ=25°CTJ=125°C0408012016020024028001234567VGS,GatetoSourceVoltage(V)ID,DrainCurrent(A)VDS>ID(on)xRDS(on)MAX250spulsetest@<0.
5dutycycleRDS(on)vsDrainCurrentVGS=10VVGS=20V0.
90.
9511.
051.
11.
151.
21.
251.
304080120160200240280ID,DrainCurrent(A)RDS(on)DraintoSourceONResistanceNormalizedtoVGS=10V@95A020406080100255075100125150TC,CaseTemperature(°C)ID,DCDrainCurrent(A)DCDrainCurrentvsCaseTemperatureAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com5–80.
80.
91.
01.
11.
2255075100125150TJ,JunctionTemperature(°C)BreakdownVoltagevsTemperatureBVDSS,DraintoSourceBreakdownVoltage(Normalized)ONresistancevsTemperature0.
00.
51.
01.
52.
02.
53.
0255075100125150TJ,JunctionTemperature(°C)RDS(on),DraintoSourceONresistance(Normalized)VGS=10VID=95AThresholdVoltagevsTemperature0.
60.
70.
80.
91.
01.
1255075100125150TC,CaseTemperature(°C)VGS(TH),ThresholdVoltage(Normalized)MaximumSafeOperatingArea10ms1ms100s11010010001101001000VDS,DraintoSourceVoltage(V)ID,DrainCurrent(A)limitedbyRDSonSinglepulseTJ=150°CTC=25°CCissCrssCoss10100100010000100000100000001020304050VDS,DraintoSourceVoltage(V)C,Capacitance(pF)CapacitancevsDraintoSourceVoltageVDS=120VVDS=300VVDS=480V02468101204080120160200240280320GateCharge(nC)VGS,GatetoSourceVoltage(V)GateChargevsGatetoSourceVoltageID=95ATJ=25°CAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com6–8TJ=25°CTJ=150°C11010010000.
30.
50.
70.
91.
11.
31.
5VSD,SourcetoDrainVoltage(V)IDR,ReverseDrainCurrent(A)SourcetoDrainDiodeForwardVoltageDelayTimesvsCurrenttd(on)td(off)020406080100120140020406080100120140160ID,DrainCurrent(A)td(on)andtd(off)(ns)VDS=400VRG=2.
5ΩTJ=125°CL=100HRiseandFalltimesvsCurrenttrtf010203040506070020406080100120140160ID,DrainCurrent(A)trandtf(ns)VDS=400VRG=2.
5ΩTJ=125°CL=100HSwitchingEnergyvsCurrentEonEoff01234020406080100120140160ID,DrainCurrent(A)SwitchingEnergy(mJ)VDS=400VRG=2.
5ΩTJ=125°CL=100HEonEoff0123450510152025GateResistance(Ohms)SwitchingEnergy(mJ)SwitchingEnergyvsGateResistanceVDS=400VID=95ATJ=125°CL=100HhardswitchingZCSZVS050100150200250300102030405060708090ID,DrainCurrent(A)Frequency(kHz)OperatingFrequencyvsDrainCurrentVDS=400VD=50%RG=2.
5ΩTJ=125°CTC=75°CAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com7–8Typicalchopperdiodeperformancecurve0.
90.
70.
50.
30.
10.
05SinglePulse00.
10.
20.
30.
40.
50.
60.
000010.
00010.
0010.
010.
1110RectangularPulseDuration(Seconds)ThermalImpedance(°C/W)MaximumEffectiveTransientThermalImpedance,JunctiontoCasevsPulseDurationTJ=25°CTJ=125°C0501001502000.
00.
51.
01.
52.
02.
5VF,AnodetoCathodeVoltage(V)IF,ForwardCurrent(A)ForwardCurrentvsForwardVoltageIRRMvs.
CurrentRateofCharge50A100A200A0102030405060020040060080010001200-diF/dt(A/s)IRRM,ReverseRecoveryCurrent(A)TJ=125°CVR=400VTrrvs.
CurrentRateofCharge50A100A200A50100150200250300020040060080010001200-diF/dt(A/s)trr,ReverseRecoveryTime(ns)TJ=125°CVR=400VQRRvs.
CurrentRateCharge50A100A200A01234020040060080010001200-diF/dt(A/s)QRR,ReverseRecoveryCharge(C)TJ=125°CVR=400VCapacitancevs.
ReverseVoltage02004006008001000120014001101001000VR,ReverseVoltage(V)C,Capacitance(pF)0255075100125150255075100125150175CaseTemperature(°C)IF(AV)(A)Max.
AverageForwardCurrentvs.
CaseTemp.
DutyCycle=0.
5TJ=175°CAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com8–8DISCLAIMERTheinformationcontainedinthedocument(unlessitispubliclyavailableontheWebwithoutaccessrestrictions)isPROPRIETARYANDCONFIDENTIALinformationofMicrosemiandcannotbecopied,published,uploaded,posted,transmitted,distributedordisclosedorusedwithouttheexpressdulysignedwrittenconsentofMicrosemi.
IftherecipientofthisdocumenthasenteredintoadisclosureagreementwithMicrosemi,thenthetermsofsuchAgreementwillalsoapply.
Thisdocumentandtheinformationcontainedhereinmaynotbemodified,byanypersonotherthanauthorizedpersonnelofMicrosemi.
Nolicenseunderanypatent,copyright,tradesecretorotherintellectualpropertyrightisgrantedtoorconferreduponyoubydisclosureordeliveryoftheinformation,eitherexpressly,byimplication,inducement,estoppelsorotherwise.
AnylicenseundersuchintellectualpropertyrightsmustbeapprovedbyMicrosemiinwritingsignedbyanofficerofMicrosemi.
Microsemireservestherighttochangetheconfiguration,functionalityandperformanceofitsproductsatanytimewithoutanynotice.
Thisproducthasbeensubjecttolimitedtestingandshouldnotbeusedinconjunctionwithlife-supportorothermission-criticalequipmentorapplications.
Microsemiassumesnoliabilitywhatsoever,andMicrosemidisclaimsanyexpressorimpliedwarranty,relatingtosaleand/oruseofMicrosemiproductsincludingliabilityorwarrantiesrelatingtofitnessforaparticularpurpose,merchantability,orinfringementofanypatent,copyrightorotherintellectualpropertyright.
Anyperformancespecificationsbelievedtobereliablebutarenotverifiedandcustomerorusermustconductandcompleteallperformanceandothertestingofthisproductaswellasanyuserorcustomersfinalapplication.
UserorcustomershallnotrelyonanydataandperformancespecificationsorparametersprovidedbyMicrosemi.
Itisthecustomer'sanduser'sresponsibilitytoindependentlydeterminesuitabilityofanyMicrosemiproductandtotestandverifythesame.
Theinformationcontainedhereinisprovided"ASIS,WHEREIS"andwithallfaults,andtheentireriskassociatedwithsuchinformationisentirelywiththeUser.
Microsemispecificallydisclaimsanyliabilityofanykindincludingforconsequential,incidentalandpunitivedamagesaswellaslostprofit.
Theproductissubjecttoothertermsandconditionswhichcanbelocatedonthewebathttp://www.
microsemi.
com/legal/tnc.
aspLifeSupportApplicationSeller'sProductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforspace,aviation,surgicalimplantintothebody,inotherapplicationsintendedtosupportorsustainlife,orforanyotherapplicationinwhichthefailureoftheSeller'sProductcouldcreateasituationwherepersonalinjury,deathorpropertydamageorlossmayoccur(collectively"LifeSupportApplications").
BuyeragreesnottouseProductsinanyLifeSupportApplicationsandtotheextentitdoesitshallconductextensivetestingoftheProductinsuchapplicationsandfurtheragreestoindemnifyandholdSeller,anditsofficers,employees,subsidiaries,affiliates,agents,salesrepresentativesanddistributorsharmlessagainstallclaims,costs,damagesandexpenses,andattorneys'feesandcostsarising,directlyordirectly,outofanyclaimsofpersonalinjury,death,damageorotherwiseassociatedwiththeuseofthegoodsinLifeSupportApplications,evenifsuchclaimincludesallegationsthatSellerwasnegligentregardingthedesignormanufactureofthegoods.
BuyermustnotifySellerinwritingbeforeusingSeller'sProductsinLifeSupportApplications.
SellerwillstudywithBuyeralternativesolutionstomeetBuyerapplicationspecificationbasedonSellerssalesconditionsapplicableforthenewproposedspecificpart.
microsemi.
com1–81413Q1Q2238227CR1CR2302932426327311615R1AllmultipleinputsandoutputsmustbeshortedtogetherExample:13/14;29/30;22/23…Allratings@Tj=25°CunlessotherwisespecifiedAbsolutemaximumratings(persuperjunctionMOSFET)TheseDevicesaresensitivetoElectrostaticDischarge.
ProperHandlingProceduresShouldBeFollowed.
SymbolParameterMaxratingsUnitVDSSDrain-SourceVoltage600VIDContinuousDrainCurrentTc=25°C95ATc=80°C70IDMPulsedDraincurrent260VGSGate-SourceVoltage±20VRDSonDrain-SourceONResistance24mPDPowerDissipationTc=25°C462WIARAvalanchecurrent(repetitiveandnonrepetitive)15AEARRepetitiveAvalancheEnergy3mJEASSinglePulseAvalancheEnergy1900ApplicationACandDCmotorcontrolSwitchedModePowerSuppliesPowerFactorCorrectionFeaturesSuperjunctionMOSFET-UltralowRDSon-LowMillercapacitance-Ultralowgatecharge-Avalancheenergyrated-VeryruggedKelvinsourceforeasydriveVerylowstrayinductanceInternalthermistorfortemperaturemonitoringBenefitsOutstandingperformanceathighfrequencyoperationDirectmountingtoheatsink(isolatedpackage)LowjunctiontocasethermalresistanceSolderableterminalsbothforpowerandsignalforeasyPCBmountingLowprofileEachlegcanbeeasilyparalleledtoachieveasingleBoostoftwicethecurrentcapabilityRoHSCompliantDualboostchopperSuperJunctionMOSFETPowerModuleVDSS=600VRDSon=24mmax@Tj=25°CID=95A@Tc=25°CAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com2–8ElectricalCharacteristics(persuperjunctionMOSFET)SymbolCharacteristicTestConditionsMinTypMaxUnitIDSSZeroGateVoltageDrainCurrentVGS=0V,VDS=600V350ARDS(on)Drain–SourceonResistanceVGS=10V,ID=47.
5A24mVGS(th)GateThresholdVoltageVGS=VDS,ID=5mA2.
133.
9VIGSSGate–SourceLeakageCurrentVGS=±20V,VDS=0V200nADynamicCharacteristics(persuperjunctionMOSFET)SymbolCharacteristicTestConditionsMinTypMaxUnitCissInputCapacitanceVGS=0V;VDS=25Vf=1MHz14.
4nFCossOutputCapacitance17QgTotalgateChargeVGS=10VVBus=300VID=95A300nCQgsGate–SourceCharge68QgdGate–DrainCharge102Td(on)Turn-onDelayTimeInductiveSwitching(125°C)VGS=10VVBus=400VID=95ARG=2.
521nsTrRiseTime30Td(off)Turn-offDelayTime100TfFallTime45EonTurn-onSwitchingEnergyInductiveswitching@25°CVGS=10V;VBus=400VID=95A;RG=2.
51350JEoffTurn-offSwitchingEnergy1040EonTurn-onSwitchingEnergyInductiveswitching@125°CVGS=10V;VBus=400VID=95A;RG=2.
52200JEoffTurn-offSwitchingEnergy1270RthJCJunctiontoCaseThermalResistance0.
27°C/WChopperdioderatingsandcharacteristics(perdiode)SymbolCharacteristicTestConditionsMinTypMaxUnitVRRMPeakRepetitiveReverseVoltage600VIRMReverseLeakageCurrentVR=600V100AIFDCForwardCurrentTc=80°C100AVFDiodeForwardVoltageIF=100A1.
62VIF=200A2IF=100ATj=125°C1.
3trrReverseRecoveryTimeIF=100AVR=400Vdi/dt=200A/sTj=25°C160nsTj=125°C220QrrReverseRecoveryChargeTj=25°C290nCTj=125°C1530RthJCJunctiontoCaseThermalResistance0.
55°C/WAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com3–8ThermalandpackagecharacteristicsSymbolCharacteristicMinMaxUnitVISOLRMSIsolationVoltage,anyterminaltocaset=1min,50/60Hz4000VTJOperatingjunctiontemperaturerange-40150°CTJOPRecommendedjunctiontemperatureunderswitchingconditions-40TJmax-25TSTGStorageTemperatureRange-40125TCOperatingCaseTemperature-40125TorqueMountingtorqueToheatsinkM423N.
mWtPackageWeight110gTemperaturesensorNTC(seeapplicationnoteAPT0406onwww.
microsemi.
comformoreinformation).
SymbolCharacteristicMinTypMaxUnitR25Resistance@25°C50kR25/R255%B25/85T25=298.
15K3952KB/BTC=100°C4%TTBRRT11exp2585/2525Packageoutline(dimensionsinmm)Seeapplicationnote1906-MountingInstructionsforSP3FPowerModulesonwww.
microsemi.
comT:ThermistortemperatureRT:ThermistorvalueatTAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com4–8TypicalSuperjunctionMOSFETPerformanceCurve0.
90.
70.
50.
30.
10.
05SinglePulse00.
050.
10.
150.
20.
250.
30.
000010.
00010.
0010.
010.
1110rectangularPulseDuration(Seconds)ThermalImpedance(°C/W)MaximumEffectiveTransientThermalImpedance,JunctiontoCasevsPulseDuration4V4.
5V5V5.
5V6V6.
5V0801602403204004805606407200510152025VDS,DraintoSourceVoltage(V)ID,DrainCurrent(A)VGS=15&10VLowVoltageOutputCharacteristicsTransfertCharacteristicsTJ=25°CTJ=125°C0408012016020024028001234567VGS,GatetoSourceVoltage(V)ID,DrainCurrent(A)VDS>ID(on)xRDS(on)MAX250spulsetest@<0.
5dutycycleRDS(on)vsDrainCurrentVGS=10VVGS=20V0.
90.
9511.
051.
11.
151.
21.
251.
304080120160200240280ID,DrainCurrent(A)RDS(on)DraintoSourceONResistanceNormalizedtoVGS=10V@95A020406080100255075100125150TC,CaseTemperature(°C)ID,DCDrainCurrent(A)DCDrainCurrentvsCaseTemperatureAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com5–80.
80.
91.
01.
11.
2255075100125150TJ,JunctionTemperature(°C)BreakdownVoltagevsTemperatureBVDSS,DraintoSourceBreakdownVoltage(Normalized)ONresistancevsTemperature0.
00.
51.
01.
52.
02.
53.
0255075100125150TJ,JunctionTemperature(°C)RDS(on),DraintoSourceONresistance(Normalized)VGS=10VID=95AThresholdVoltagevsTemperature0.
60.
70.
80.
91.
01.
1255075100125150TC,CaseTemperature(°C)VGS(TH),ThresholdVoltage(Normalized)MaximumSafeOperatingArea10ms1ms100s11010010001101001000VDS,DraintoSourceVoltage(V)ID,DrainCurrent(A)limitedbyRDSonSinglepulseTJ=150°CTC=25°CCissCrssCoss10100100010000100000100000001020304050VDS,DraintoSourceVoltage(V)C,Capacitance(pF)CapacitancevsDraintoSourceVoltageVDS=120VVDS=300VVDS=480V02468101204080120160200240280320GateCharge(nC)VGS,GatetoSourceVoltage(V)GateChargevsGatetoSourceVoltageID=95ATJ=25°CAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com6–8TJ=25°CTJ=150°C11010010000.
30.
50.
70.
91.
11.
31.
5VSD,SourcetoDrainVoltage(V)IDR,ReverseDrainCurrent(A)SourcetoDrainDiodeForwardVoltageDelayTimesvsCurrenttd(on)td(off)020406080100120140020406080100120140160ID,DrainCurrent(A)td(on)andtd(off)(ns)VDS=400VRG=2.
5ΩTJ=125°CL=100HRiseandFalltimesvsCurrenttrtf010203040506070020406080100120140160ID,DrainCurrent(A)trandtf(ns)VDS=400VRG=2.
5ΩTJ=125°CL=100HSwitchingEnergyvsCurrentEonEoff01234020406080100120140160ID,DrainCurrent(A)SwitchingEnergy(mJ)VDS=400VRG=2.
5ΩTJ=125°CL=100HEonEoff0123450510152025GateResistance(Ohms)SwitchingEnergy(mJ)SwitchingEnergyvsGateResistanceVDS=400VID=95ATJ=125°CL=100HhardswitchingZCSZVS050100150200250300102030405060708090ID,DrainCurrent(A)Frequency(kHz)OperatingFrequencyvsDrainCurrentVDS=400VD=50%RG=2.
5ΩTJ=125°CTC=75°CAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com7–8Typicalchopperdiodeperformancecurve0.
90.
70.
50.
30.
10.
05SinglePulse00.
10.
20.
30.
40.
50.
60.
000010.
00010.
0010.
010.
1110RectangularPulseDuration(Seconds)ThermalImpedance(°C/W)MaximumEffectiveTransientThermalImpedance,JunctiontoCasevsPulseDurationTJ=25°CTJ=125°C0501001502000.
00.
51.
01.
52.
02.
5VF,AnodetoCathodeVoltage(V)IF,ForwardCurrent(A)ForwardCurrentvsForwardVoltageIRRMvs.
CurrentRateofCharge50A100A200A0102030405060020040060080010001200-diF/dt(A/s)IRRM,ReverseRecoveryCurrent(A)TJ=125°CVR=400VTrrvs.
CurrentRateofCharge50A100A200A50100150200250300020040060080010001200-diF/dt(A/s)trr,ReverseRecoveryTime(ns)TJ=125°CVR=400VQRRvs.
CurrentRateCharge50A100A200A01234020040060080010001200-diF/dt(A/s)QRR,ReverseRecoveryCharge(C)TJ=125°CVR=400VCapacitancevs.
ReverseVoltage02004006008001000120014001101001000VR,ReverseVoltage(V)C,Capacitance(pF)0255075100125150255075100125150175CaseTemperature(°C)IF(AV)(A)Max.
AverageForwardCurrentvs.
CaseTemp.
DutyCycle=0.
5TJ=175°CAPTC60DDAM24T3GAPTC60DDAM24T3G–Rev2November,2017www.
microsemi.
com8–8DISCLAIMERTheinformationcontainedinthedocument(unlessitispubliclyavailableontheWebwithoutaccessrestrictions)isPROPRIETARYANDCONFIDENTIALinformationofMicrosemiandcannotbecopied,published,uploaded,posted,transmitted,distributedordisclosedorusedwithouttheexpressdulysignedwrittenconsentofMicrosemi.
IftherecipientofthisdocumenthasenteredintoadisclosureagreementwithMicrosemi,thenthetermsofsuchAgreementwillalsoapply.
Thisdocumentandtheinformationcontainedhereinmaynotbemodified,byanypersonotherthanauthorizedpersonnelofMicrosemi.
Nolicenseunderanypatent,copyright,tradesecretorotherintellectualpropertyrightisgrantedtoorconferreduponyoubydisclosureordeliveryoftheinformation,eitherexpressly,byimplication,inducement,estoppelsorotherwise.
AnylicenseundersuchintellectualpropertyrightsmustbeapprovedbyMicrosemiinwritingsignedbyanofficerofMicrosemi.
Microsemireservestherighttochangetheconfiguration,functionalityandperformanceofitsproductsatanytimewithoutanynotice.
Thisproducthasbeensubjecttolimitedtestingandshouldnotbeusedinconjunctionwithlife-supportorothermission-criticalequipmentorapplications.
Microsemiassumesnoliabilitywhatsoever,andMicrosemidisclaimsanyexpressorimpliedwarranty,relatingtosaleand/oruseofMicrosemiproductsincludingliabilityorwarrantiesrelatingtofitnessforaparticularpurpose,merchantability,orinfringementofanypatent,copyrightorotherintellectualpropertyright.
Anyperformancespecificationsbelievedtobereliablebutarenotverifiedandcustomerorusermustconductandcompleteallperformanceandothertestingofthisproductaswellasanyuserorcustomersfinalapplication.
UserorcustomershallnotrelyonanydataandperformancespecificationsorparametersprovidedbyMicrosemi.
Itisthecustomer'sanduser'sresponsibilitytoindependentlydeterminesuitabilityofanyMicrosemiproductandtotestandverifythesame.
Theinformationcontainedhereinisprovided"ASIS,WHEREIS"andwithallfaults,andtheentireriskassociatedwithsuchinformationisentirelywiththeUser.
Microsemispecificallydisclaimsanyliabilityofanykindincludingforconsequential,incidentalandpunitivedamagesaswellaslostprofit.
Theproductissubjecttoothertermsandconditionswhichcanbelocatedonthewebathttp://www.
microsemi.
com/legal/tnc.
aspLifeSupportApplicationSeller'sProductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforspace,aviation,surgicalimplantintothebody,inotherapplicationsintendedtosupportorsustainlife,orforanyotherapplicationinwhichthefailureoftheSeller'sProductcouldcreateasituationwherepersonalinjury,deathorpropertydamageorlossmayoccur(collectively"LifeSupportApplications").
BuyeragreesnottouseProductsinanyLifeSupportApplicationsandtotheextentitdoesitshallconductextensivetestingoftheProductinsuchapplicationsandfurtheragreestoindemnifyandholdSeller,anditsofficers,employees,subsidiaries,affiliates,agents,salesrepresentativesanddistributorsharmlessagainstallclaims,costs,damagesandexpenses,andattorneys'feesandcostsarising,directlyordirectly,outofanyclaimsofpersonalinjury,death,damageorotherwiseassociatedwiththeuseofthegoodsinLifeSupportApplications,evenifsuchclaimincludesallegationsthatSellerwasnegligentregardingthedesignormanufactureofthegoods.
BuyermustnotifySellerinwritingbeforeusingSeller'sProductsinLifeSupportApplications.
SellerwillstudywithBuyeralternativesolutionstomeetBuyerapplicationspecificationbasedonSellerssalesconditionsapplicableforthenewproposedspecificpart.
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