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SemiconductorComponentsIndustries,LLC,2019January,2019Rev.
01PublicationOrderNumber:NTMJS1D6N06CL/DNTMJS1D6N06CLPowerMOSFET60V,1.
36mW,250A,SingleNChannelFeaturesSmallFootprint(5x6mm)forCompactDesignLowRDS(on)toMinimizeConductionLossesLowQGandCapacitancetoMinimizeDriverLossesLFPAK8Package,IndustryStandardTheseDevicesarePbFreeandareRoHSCompliantMAXIMUMRATINGS(TJ=25°Cunlessotherwisenoted)ParameterSymbolValueUnitDraintoSourceVoltageVDSS60VGatetoSourceVoltageVGS±20VContinuousDrainCurrentRqJC(Notes1,3)SteadyStateTC=25°CID250ATC=100°C175PowerDissipationRqJC(Note1)TC=25°CPD167WTC=100°C83ContinuousDrainCurrentRqJA(Notes1,2,3)SteadyStateTA=25°CID38ATA=100°C27PowerDissipationRqJA(Notes1,2)TA=25°CPD3.
8WTA=100°C1.
9PulsedDrainCurrentTA=25°C,tp=10msIDM900AOperatingJunctionandStorageTemperatureRangeTJ,Tstg55to+175°CSourceCurrent(BodyDiode)IS164ASinglePulseDraintoSourceAvalancheEnergy(IL(pk)=17A)EAS451mJLeadTemperatureforSolderingPurposes(1/8″fromcasefor10s)TL260°CStressesexceedingthoselistedintheMaximumRatingstablemaydamagethedevice.
Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbeassumed,damagemayoccurandreliabilitymaybeaffected.
THERMALRESISTANCEMAXIMUMRATINGSParameterSymbolValueUnitJunctiontoCaseSteadyStateRqJC0.
9°C/WJunctiontoAmbientSteadyState(Note2)RqJA361.
Theentireapplicationenvironmentimpactsthethermalresistancevaluesshown,theyarenotconstantsandareonlyvalidfortheparticularconditionsnoted.
2.
SurfacemountedonFR4boardusinga650mm2,2oz.
Cupad.
3.
Maximumcurrentforpulsesaslongas1secondishigherbutisdependentonpulsedurationanddutycycle.
MARKINGDIAGRAMwww.
onsemi.
comG(4)S(1,2,3)NCHANNELMOSFETD(5,8)LFPAK8CASE760AASeedetailedordering,markingandshippinginformationonpage5ofthisdatasheet.
ORDERINGINFORMATIONV(BR)DSSRDS(ON)MAXIDMAX60V1.
36mW@10V250A2.
30mW@4.
5V1D6N06CL=SpecificDeviceCodeA=AssemblyLocationWL=WaferLotY=YearW=WorkWeek1D6N06CLAWLYWGSDDDDSS1NTMJS1D6N06CLwww.
onsemi.
com2ELECTRICALCHARACTERISTICS(TJ=25°Cunlessotherwisespecified)ParameterSymbolTestConditionMinTypMaxUnitOFFCHARACTERISTICSDraintoSourceBreakdownVoltageV(BR)DSSVGS=0V,ID=250mA60VDraintoSourceBreakdownVoltageTemperatureCoefficientV(BR)DSS/TJ11mV/°CZeroGateVoltageDrainCurrentIDSSVGS=0V,VDS=60VTJ=25°C10mATJ=125°C250GatetoSourceLeakageCurrentIGSSVDS=0V,VGS=±16V±100nAONCHARACTERISTICS(Note4)GateThresholdVoltageVGS(TH)VGS=VDS,ID=250mA1.
22.
0VThresholdTemperatureCoefficientVGS(TH)/TJ5.
2mV/°CDraintoSourceOnResistanceRDS(on)VGS=10VID=50A1.
131.
36mWVGS=4.
5VID=50A1.
652.
30ForwardTransconductancegFSVDS=15V,ID=50A151SCHARGES,CAPACITANCES&GATERESISTANCEInputCapacitanceCISSVGS=0V,f=1MHz,VDS=25V6660pFOutputCapacitanceCOSS2953ReverseTransferCapacitanceCRSS45TotalGateChargeQG(TOT)VGS=4.
5V,VDS=30V;ID=50A41nCTotalGateChargeQG(TOT)VGS=10V,VDS=30V;ID=50A91ThresholdGateChargeQG(TH)VGS=4.
5V,VDS=30V;ID=50A5GatetoSourceChargeQGS17.
1GatetoDrainChargeQGD10.
9PlateauVoltageVGP2.
9VSWITCHINGCHARACTERISTICS(Note5)TurnOnDelayTimetd(ON)VGS=4.
5V,VDS=30V,ID=50A,RG=1W19nsRiseTimetr51TurnOffDelayTimetd(OFF)47FallTimetf18DRAINSOURCEDIODECHARACTERISTICSForwardDiodeVoltageVSDVGS=0V,IS=50ATJ=25°C0.
781.
2VTJ=125°C0.
66ReverseRecoveryTimetRRVGS=0V,dIs/dt=100A/ms,IS=50A78nsChargeTimeta36DischargeTimetb42ReverseRecoveryChargeQRR105nCProductparametricperformanceisindicatedintheElectricalCharacteristicsforthelistedtestconditions,unlessotherwisenoted.
ProductperformancemaynotbeindicatedbytheElectricalCharacteristicsifoperatedunderdifferentconditions.
4.
PulseTest:pulsewidthv300ms,dutycyclev2%.
5.
Switchingcharacteristicsareindependentofoperatingjunctiontemperatures.
NTMJS1D6N06CLwww.
onsemi.
com3TYPICALCHARACTERISTICSFigure1.
OnRegionCharacteristicsFigure2.
TransferCharacteristicsVDS,DRAINTOSOURCEVOLTAGE(V)VGS,GATETOSOURCEVOLTAGE(V)3.
02.
52.
01.
51.
00.
500204060801001201404.
03.
02.
52.
01.
51.
00.
50020406080100120200Figure3.
OnResistancevs.
GatetoSourceVoltageFigure4.
OnResistancevs.
DrainCurrentandGateVoltageVGS,GATEVOLTAGE(V)ID,DRAINCURRENT(A)109.
08.
07.
06.
05.
04.
01.
11.
21.
41.
61.
82.
013011019090705030100.
50.
71.
31.
51.
9Figure5.
OnResistanceVariationwithTemperatureFigure6.
DraintoSourceLeakageCurrentvs.
VoltageTJ,JUNCTIONTEMPERATURE(°C)VDS,DRAINTOSOURCEVOLTAGE(V)1501251007525025500.
70.
91.
11.
31.
51.
71.
95545352515510100100010,0001,000,000ID,DRAINCURRENT(A)ID,DRAINCURRENT(A)RDS(on),DRAINTOSOURCERESISTANCE(mW)RDS(on),DRAINTOSOURCERESISTANCE(mW)RDS(on),NORMALIZEDDRAINTOSOURCERESISTANCEIDSS,LEAKAGE(nA)2.
8V3.
0V3.
2VVGS=10Vto3.
4V3.
5VDS≤10VTJ=125°CTJ=25°CTJ=55°CTJ=25°CID=50ATJ=25°CVGS=4.
5VVGS=10VVGS=10VID=40A50175TJ=125°CTJ=85°C1601802001401601801.
31.
51.
71.
92.
19.
58.
57.
56.
55.
54.
53.
51501700.
91.
11.
70.
60.
81.
41.
62.
01.
01.
21.
8TJ=150°C100,000NTMJS1D6N06CLwww.
onsemi.
com4TYPICALCHARACTERISTICSFigure7.
CapacitanceVariationFigure8.
GatetoSourceandDraintoSourceVoltagevs.
TotalChargeVDS,DRAINTOSOURCEVOLTAGE(V)QG,TOTALGATECHARGE(nC)605040302010001000300040005000600070007060504030201000246810Figure9.
ResistiveSwitchingTimeVariationvs.
GateResistanceFigure10.
DiodeForwardVoltagevs.
CurrentRG,GATERESISTANCE(W)VSD,SOURCETODRAINVOLTAGE(V)10010111010010000.
90.
81.
00.
70.
60.
50.
40.
3161621263641Figure11.
SafeOperatingAreaFigure12.
IPEAKvs.
TimeinAvalancheVDS(V)TIMEINAVALANCHE(s)1001010.
111010010001E04110100C,CAPACITANCE(pF)VGS,GATETOSOURCEVOLTAGE(V)t,TIME(ns)IS,SOURCECURRENT(A)IDS(A)IPEAK(A)VGS=0VTJ=25°Cf=1MHzCISSCOSSCRSS80VDS,DRAINTOSOURCEVOLTAGE(V)010152025305VDS=30VTJ=25°CID=50AQTQGSQGDVGS=4.
5VVDD=30VID=50Atd(off)td(on)tftrTJ=125°CTJ=25°CTJ=55°C113146TJ(initial)=100°CTJ(initial)=25°C1E031E02RDS(on)LimitThermalLimitPackageLimitdc0.
01ms0.
1ms1ms10msTC=25°CVGS≤10V2000800090NTMJS1D6N06CLwww.
onsemi.
com5TYPICALCHARACTERISTICSFigure13.
ThermalCharacteristicsPULSETIME(sec)0.
010.
00110.
00010.
10.
00001100.
0000010.
0010.
1110100R(t)(°C/W)1001000SinglePulse50%DutyCycle20%10%5%2%1%NTMJS1D6N06CL650mm2,2oz.
,CuSingleLayerPad0.
01DEVICEORDERINGINFORMATIONDeviceMarkingPackageShippingNTMJS1D6N06CLTWG1D6N06CLLFPAK8(PbFree)3000/Tape&ReelForinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D.
NTMJS1D6N06CLwww.
onsemi.
com6PACKAGEDIMENSIONSLFPAK85x6CASE760AAISSUEADIMMINNOMMAXA1.
101.
30A10.
000.
15b0.
400.
50c0.
190.
254.
203.
904.
10DD1EE1E2eLD23.
003.
200.
400.
85MILLIMETERS1.
200.
080.
450.
224.
005.
153.
100.
65L10.
150.
350.
25L20.
801.
301.
05q1.
27BSC4.
704.
904.
804.
805.
004.
900°A21.
101.
201.
15A30.
25REFc20.
190.
250.
22D30.
300.
500.
40H6.
154°8°A40.
450.
550.
506.
306.
005.
305.
00G0.
650.
750.
55RECOMMENDEDMOUNTINGFOOTPRINT144.
5100.
7000.
6001.
0600.
7002.
0551.
2700.
7001.
1504.
0600.
59585(8X)BTOPVIEWEE2HDL1L2e/2bA2c2ceA0.
25CAB(8X)14SIDEVIEW85HALq(A3)0.
10CCA1DETAIL'A'A441D1E1D2D3BOTTOMVIEW58GONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/PatentMarking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
ONSemiconductorisanEqualOpportunity/AffirmativeActionEmployer.
Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner.
PUBLICATIONORDERINGINFORMATIONN.
AmericanTechnicalSupport:8002829855TollFreeUSA/CanadaEurope,MiddleEastandAfricaTechnicalSupport:Phone:421337902910NTMJS1D6N06CL/DLITERATUREFULFILLMENT:LiteratureDistributionCenterforONSemiconductor19521E.
32ndPkwy,Aurora,Colorado80011USAPhone:3036752175or8003443860TollFreeUSA/CanadaFax:3036752176or8003443867TollFreeUSA/CanadaEmail:orderlit@onsemi.
comONSemiconductorWebsite:www.
onsemi.
comOrderLiterature:http://www.
onsemi.
com/orderlitForadditionalinformation,pleasecontactyourlocalSalesRepresentative
01PublicationOrderNumber:NTMJS1D6N06CL/DNTMJS1D6N06CLPowerMOSFET60V,1.
36mW,250A,SingleNChannelFeaturesSmallFootprint(5x6mm)forCompactDesignLowRDS(on)toMinimizeConductionLossesLowQGandCapacitancetoMinimizeDriverLossesLFPAK8Package,IndustryStandardTheseDevicesarePbFreeandareRoHSCompliantMAXIMUMRATINGS(TJ=25°Cunlessotherwisenoted)ParameterSymbolValueUnitDraintoSourceVoltageVDSS60VGatetoSourceVoltageVGS±20VContinuousDrainCurrentRqJC(Notes1,3)SteadyStateTC=25°CID250ATC=100°C175PowerDissipationRqJC(Note1)TC=25°CPD167WTC=100°C83ContinuousDrainCurrentRqJA(Notes1,2,3)SteadyStateTA=25°CID38ATA=100°C27PowerDissipationRqJA(Notes1,2)TA=25°CPD3.
8WTA=100°C1.
9PulsedDrainCurrentTA=25°C,tp=10msIDM900AOperatingJunctionandStorageTemperatureRangeTJ,Tstg55to+175°CSourceCurrent(BodyDiode)IS164ASinglePulseDraintoSourceAvalancheEnergy(IL(pk)=17A)EAS451mJLeadTemperatureforSolderingPurposes(1/8″fromcasefor10s)TL260°CStressesexceedingthoselistedintheMaximumRatingstablemaydamagethedevice.
Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbeassumed,damagemayoccurandreliabilitymaybeaffected.
THERMALRESISTANCEMAXIMUMRATINGSParameterSymbolValueUnitJunctiontoCaseSteadyStateRqJC0.
9°C/WJunctiontoAmbientSteadyState(Note2)RqJA361.
Theentireapplicationenvironmentimpactsthethermalresistancevaluesshown,theyarenotconstantsandareonlyvalidfortheparticularconditionsnoted.
2.
SurfacemountedonFR4boardusinga650mm2,2oz.
Cupad.
3.
Maximumcurrentforpulsesaslongas1secondishigherbutisdependentonpulsedurationanddutycycle.
MARKINGDIAGRAMwww.
onsemi.
comG(4)S(1,2,3)NCHANNELMOSFETD(5,8)LFPAK8CASE760AASeedetailedordering,markingandshippinginformationonpage5ofthisdatasheet.
ORDERINGINFORMATIONV(BR)DSSRDS(ON)MAXIDMAX60V1.
36mW@10V250A2.
30mW@4.
5V1D6N06CL=SpecificDeviceCodeA=AssemblyLocationWL=WaferLotY=YearW=WorkWeek1D6N06CLAWLYWGSDDDDSS1NTMJS1D6N06CLwww.
onsemi.
com2ELECTRICALCHARACTERISTICS(TJ=25°Cunlessotherwisespecified)ParameterSymbolTestConditionMinTypMaxUnitOFFCHARACTERISTICSDraintoSourceBreakdownVoltageV(BR)DSSVGS=0V,ID=250mA60VDraintoSourceBreakdownVoltageTemperatureCoefficientV(BR)DSS/TJ11mV/°CZeroGateVoltageDrainCurrentIDSSVGS=0V,VDS=60VTJ=25°C10mATJ=125°C250GatetoSourceLeakageCurrentIGSSVDS=0V,VGS=±16V±100nAONCHARACTERISTICS(Note4)GateThresholdVoltageVGS(TH)VGS=VDS,ID=250mA1.
22.
0VThresholdTemperatureCoefficientVGS(TH)/TJ5.
2mV/°CDraintoSourceOnResistanceRDS(on)VGS=10VID=50A1.
131.
36mWVGS=4.
5VID=50A1.
652.
30ForwardTransconductancegFSVDS=15V,ID=50A151SCHARGES,CAPACITANCES&GATERESISTANCEInputCapacitanceCISSVGS=0V,f=1MHz,VDS=25V6660pFOutputCapacitanceCOSS2953ReverseTransferCapacitanceCRSS45TotalGateChargeQG(TOT)VGS=4.
5V,VDS=30V;ID=50A41nCTotalGateChargeQG(TOT)VGS=10V,VDS=30V;ID=50A91ThresholdGateChargeQG(TH)VGS=4.
5V,VDS=30V;ID=50A5GatetoSourceChargeQGS17.
1GatetoDrainChargeQGD10.
9PlateauVoltageVGP2.
9VSWITCHINGCHARACTERISTICS(Note5)TurnOnDelayTimetd(ON)VGS=4.
5V,VDS=30V,ID=50A,RG=1W19nsRiseTimetr51TurnOffDelayTimetd(OFF)47FallTimetf18DRAINSOURCEDIODECHARACTERISTICSForwardDiodeVoltageVSDVGS=0V,IS=50ATJ=25°C0.
781.
2VTJ=125°C0.
66ReverseRecoveryTimetRRVGS=0V,dIs/dt=100A/ms,IS=50A78nsChargeTimeta36DischargeTimetb42ReverseRecoveryChargeQRR105nCProductparametricperformanceisindicatedintheElectricalCharacteristicsforthelistedtestconditions,unlessotherwisenoted.
ProductperformancemaynotbeindicatedbytheElectricalCharacteristicsifoperatedunderdifferentconditions.
4.
PulseTest:pulsewidthv300ms,dutycyclev2%.
5.
Switchingcharacteristicsareindependentofoperatingjunctiontemperatures.
NTMJS1D6N06CLwww.
onsemi.
com3TYPICALCHARACTERISTICSFigure1.
OnRegionCharacteristicsFigure2.
TransferCharacteristicsVDS,DRAINTOSOURCEVOLTAGE(V)VGS,GATETOSOURCEVOLTAGE(V)3.
02.
52.
01.
51.
00.
500204060801001201404.
03.
02.
52.
01.
51.
00.
50020406080100120200Figure3.
OnResistancevs.
GatetoSourceVoltageFigure4.
OnResistancevs.
DrainCurrentandGateVoltageVGS,GATEVOLTAGE(V)ID,DRAINCURRENT(A)109.
08.
07.
06.
05.
04.
01.
11.
21.
41.
61.
82.
013011019090705030100.
50.
71.
31.
51.
9Figure5.
OnResistanceVariationwithTemperatureFigure6.
DraintoSourceLeakageCurrentvs.
VoltageTJ,JUNCTIONTEMPERATURE(°C)VDS,DRAINTOSOURCEVOLTAGE(V)1501251007525025500.
70.
91.
11.
31.
51.
71.
95545352515510100100010,0001,000,000ID,DRAINCURRENT(A)ID,DRAINCURRENT(A)RDS(on),DRAINTOSOURCERESISTANCE(mW)RDS(on),DRAINTOSOURCERESISTANCE(mW)RDS(on),NORMALIZEDDRAINTOSOURCERESISTANCEIDSS,LEAKAGE(nA)2.
8V3.
0V3.
2VVGS=10Vto3.
4V3.
5VDS≤10VTJ=125°CTJ=25°CTJ=55°CTJ=25°CID=50ATJ=25°CVGS=4.
5VVGS=10VVGS=10VID=40A50175TJ=125°CTJ=85°C1601802001401601801.
31.
51.
71.
92.
19.
58.
57.
56.
55.
54.
53.
51501700.
91.
11.
70.
60.
81.
41.
62.
01.
01.
21.
8TJ=150°C100,000NTMJS1D6N06CLwww.
onsemi.
com4TYPICALCHARACTERISTICSFigure7.
CapacitanceVariationFigure8.
GatetoSourceandDraintoSourceVoltagevs.
TotalChargeVDS,DRAINTOSOURCEVOLTAGE(V)QG,TOTALGATECHARGE(nC)605040302010001000300040005000600070007060504030201000246810Figure9.
ResistiveSwitchingTimeVariationvs.
GateResistanceFigure10.
DiodeForwardVoltagevs.
CurrentRG,GATERESISTANCE(W)VSD,SOURCETODRAINVOLTAGE(V)10010111010010000.
90.
81.
00.
70.
60.
50.
40.
3161621263641Figure11.
SafeOperatingAreaFigure12.
IPEAKvs.
TimeinAvalancheVDS(V)TIMEINAVALANCHE(s)1001010.
111010010001E04110100C,CAPACITANCE(pF)VGS,GATETOSOURCEVOLTAGE(V)t,TIME(ns)IS,SOURCECURRENT(A)IDS(A)IPEAK(A)VGS=0VTJ=25°Cf=1MHzCISSCOSSCRSS80VDS,DRAINTOSOURCEVOLTAGE(V)010152025305VDS=30VTJ=25°CID=50AQTQGSQGDVGS=4.
5VVDD=30VID=50Atd(off)td(on)tftrTJ=125°CTJ=25°CTJ=55°C113146TJ(initial)=100°CTJ(initial)=25°C1E031E02RDS(on)LimitThermalLimitPackageLimitdc0.
01ms0.
1ms1ms10msTC=25°CVGS≤10V2000800090NTMJS1D6N06CLwww.
onsemi.
com5TYPICALCHARACTERISTICSFigure13.
ThermalCharacteristicsPULSETIME(sec)0.
010.
00110.
00010.
10.
00001100.
0000010.
0010.
1110100R(t)(°C/W)1001000SinglePulse50%DutyCycle20%10%5%2%1%NTMJS1D6N06CL650mm2,2oz.
,CuSingleLayerPad0.
01DEVICEORDERINGINFORMATIONDeviceMarkingPackageShippingNTMJS1D6N06CLTWG1D6N06CLLFPAK8(PbFree)3000/Tape&ReelForinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D.
NTMJS1D6N06CLwww.
onsemi.
com6PACKAGEDIMENSIONSLFPAK85x6CASE760AAISSUEADIMMINNOMMAXA1.
101.
30A10.
000.
15b0.
400.
50c0.
190.
254.
203.
904.
10DD1EE1E2eLD23.
003.
200.
400.
85MILLIMETERS1.
200.
080.
450.
224.
005.
153.
100.
65L10.
150.
350.
25L20.
801.
301.
05q1.
27BSC4.
704.
904.
804.
805.
004.
900°A21.
101.
201.
15A30.
25REFc20.
190.
250.
22D30.
300.
500.
40H6.
154°8°A40.
450.
550.
506.
306.
005.
305.
00G0.
650.
750.
55RECOMMENDEDMOUNTINGFOOTPRINT144.
5100.
7000.
6001.
0600.
7002.
0551.
2700.
7001.
1504.
0600.
59585(8X)BTOPVIEWEE2HDL1L2e/2bA2c2ceA0.
25CAB(8X)14SIDEVIEW85HALq(A3)0.
10CCA1DETAIL'A'A441D1E1D2D3BOTTOMVIEW58GONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/PatentMarking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
ONSemiconductorisanEqualOpportunity/AffirmativeActionEmployer.
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