组件万网主机管理

bq24296,bq24297ZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014bq2429x具具有有窄窄范范围围VDC电电源源路路径径管管理理和和可可调调电电压压USBOTG的的I2C控控制制3A单单节节USB充充电电器器11特特性性90%高效开关模式3A充电器安全性3.
9V至6.
2V单输入USB标准充电器,提供6.
4V–针对OTG模式中充电和放电的电池温度感测过压保护–电池充电安全定时器–与USB电池充电器技术规格(BC1.
2)兼容的–热调节和热关断USB主机或充电端口D+/D-检测–输入和系统过压保护–支持非标准2A/1A适配器检测(bq24297)–MOSFET过流保护–输入电压和电流限制支持USB2.
0和USB3.
0针对LED或主机处理器的充电状态输出–输入电流限通过输入电压调节实现最大功率跟踪能力值:100mA,150mA,500mA,900mA,1A,20A低电池泄漏电流,支持运输模式1.
5A,2A和3A4.
00mmx4.
00mm紧凑型超薄四方扁平无引线USBOTG1A或1.
5A时可调输出电压范围为(VQFN)-24封装4.
55V至5.
5V–快速OTG启动(典型值22ms)2应应用用–5V升压模式效率为90%平板电脑,智能手机,网络设备–精确的±15%断续模式过流保护便携式音频扬声器窄范围VDC(NVDC)电源路径管理掌上电脑,PDA和POS–在无电池或深度电池放电时的即时系统启动–电池充电模式中的理想二极管运行3说说明明薄型1.
2mm电感1.
5MHz开关频率bq24296/bq24297是高度集成开关模式电池充电管理I2C端口用于实现最优系统性能和状态报告和系统电源路径管理器件,此类器件用于续航各种智能自主电池充电,支持或不支持主机管理均可手机和平板电脑应用中的单节锂离子和锂聚合物电池.
–电池充电使能和预调节器器件件信信息息(1)–充电终止和再充电器器件件型型号号封封装装封封装装尺尺寸寸((标标称称值值))高精度bq24296/7VQFN(24)4.
00mmx4.
00mm–充电电压调节范围为±0.
5%(1)如需了解所有可用封装,请见数据表末尾的可订购产品附录.
–充电电流调节范围为±7%–输入电流调节范围为±7.
5%–USBOTG升压模式下±3%输出电压调节范围高集成–电源路径管理–同步开关MOSFET–集成电流感测–阴极负载二极管–内部环路补偿1PRODUCTIONDATAinformationiscurrentasofpublicationdate.
ProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
Productionprocessingdoesnotnecessarilyincludetestingofallparameters.
EnglishDataSheet:SLUSBP6bq24296,bq24297ZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014www.
ti.
com.
cn目目录录9.
3FeatureDescription.
161特特性性.
19.
4DeviceFunctionalModes.
282应应用用.
19.
5Programming.
293说说明明.
19.
6RegisterMap.
334修修订订历历史史记记录录210ApplicationandImplementation.
405说说明明((续续)310.
1ApplicationInformation.
406DeviceComparisonTable.
310.
2TypicalApplication407PinConfigurationandFunctions.
411PowerSupplyRecommendations458Specifications.
612Layout.
458.
1AbsoluteMaximumRatings612.
1LayoutGuidelines458.
2ESDRatings612.
2LayoutExample468.
3RecommendedOperatingConditions.
613器器件件和和文文档档支支持持478.
4ThermalInformation.
713.
1文档支持478.
5ElectricalCharacteristics.
713.
2相关链接.
478.
6TimingRequirements.
1113.
3商标.
478.
7TypicalCharacteristics.
1113.
4静电放电警告.
479DetailedDescription1413.
5术语表479.
1Overview1414机机械械封封装装和和可可订订购购信信息息479.
2FunctionalBlockDiagram154修修订订历历史史记记录录NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion.
ChangesfromRevisionA(October2013)toRevisionBPage已添加处理额定值表,特性描述部分,器件功能模式,应用和实施部分,电源相关建议部分,布局部分,器件和文档支持部分以及机械、封装和可订购信息部分.
1已更改首页上的图.
1ChangedREG01[4]=1toREG01[5]=1inOTGdescription.
4Added(10kΩNTCthermisteronly)toQONdescription5AddedESDinformationtoHandlingRatings6已更改ICHG=1792mAinIICHG_REG_ACCtestconditions.
8已更改fallingtorisinginVHTF.
9已更改VHTFTYPto47.
2%9已更改Inputhighthreshold(OTG)MINto1.
1V.
10已更改表319已更改图1522已更改RT1=5.
25kΩ25已删除andLSFETfromVoltageandCurrentMonitoringinBuckModedescription.
27已删除HSFETandfromVoltageandCurrentMonitoringinBoostModedescription.
28已更改textinOver-CurrentProtection28已更改REG09[5]toREG09[3]inBatteryOver-VoltageProtection(BATOVP)section.
28已更改REG09Bit3description1–BatteryOVP39ChangesfromOriginal(September2013)toRevisionAPage已删除bq24297部件号中的H12版权2013–2014,TexasInstrumentsIncorporatedbq24296,bq24297www.
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cnZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER20145说说明明((续续))它的低阻抗电源路径对开关模式运行效率进行了优化、减少了电池充电时间并延长了放电阶段的电池寿命.

具有充电和系统设置的I2C串行接口使得此器件成为一个真正的灵活解决方案.
该器件支持3.
9V-6.
2VUSB输入电源,包括具有6.
4V过压保护功能的标准USB主机端口和USB充电端口.
该器件符合USB2.
0和USB3.
0电源规范,具有输入电流和电压调节功能.
为了设定默认输入电流限值,bq24296从系统检测电路(如USBPHY器件)获得结果,而bq24297将通过D+/D-检测功能检测符合USB电池充电规范1.
2的输入电源.
此外,bq24297还会检测非标准2A/1A适配器.
该器件还具有快速启动功能和高达1.
5A的精确限流能力,能够为VBUS提供4.
55V至5.
5V(默认5V)可调电压,支持USBOn-the-Go运行.
电源路径管理将系统电压调节为稍稍高于电池电压,但是又不会下降到低于3.
5V最小系统电压(可编程).
借助于这个特性,即使在电池电量完全耗尽或者电池被拆除时,系统也能保持运行.

当达到输入源电流或电压限值时,电源路径管理自动将充电电流减少为零,然后开始对电池放电,直到满足系统的电源需求.

这个充电模式操作可保证输入源不会过载.
此器件在主机控制不可用时开始且完成一个充电周期.
它分三个阶段对电池进行自动充电:预调节、恒定电流和恒定电压.
在充电周期的末尾,当充电电流低于在恒定电压阶段中预设定的限值时,充电器自动终止.

之后,当电池电压下降到低于再充电阈值时,充电器将自动启动另外一个充电周期.

此充电器件提供针对电池充电和系统运行的多种安全特性,其中包括负温度系数热敏电阻监视、充电安全性定时器和过压/过流保护.
当结温超过120°C(可设定)时,热调节减少充电电流.
STAT输出报告充电状态和任何故障条件.
当故障发生时,INT立即通知主机.
bq24296和bq24297采用24引脚4x4mm2超薄VQFN封装.
6DeviceComparisonTablebq24296bq24297I2CAddress6BH6BHUSBOTGYesYesAdjustable4.
5Vto5.
5Vat1.
5A(max)Adjustable4.
5Vto5.
5Vat1.
5A(max)USBDetectionPSELD+/D–DefaultBatteryVoltage4.
208V4.
208VDefaultChargeCurrent2.
048A2.
048ADefaultAdapterCurrentLimit3A3ADefaultPre-ChargeCurrent/MaxPre-256mA/2.
048A256mA/2.
048AChargeCurrentDefaultTerminationCurrent256mA256mAChargingTemperatureProfileCold/HotCold/HotStatusOutputSTAT,PGSTATSTATDuringFaultBlinkingat1HzBlinkingat1HzDefaultSafetyTimer12hr12hrDefaultVINDPM4.
36V4.
36VDefaultPre-chargeTimer4hr4hrCopyright2013–2014,TexasInstrumentsIncorporated3bq24296,bq24297ZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014www.
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cn7PinConfigurationandFunctions24-PinVQFN24-PinVQFNRGEPackageRGEPackage(TopView)(TopView)PinFunctionsPINNUMBERTYPEDESCRIPTIONbq24296bq24297VBUSVBUS1,24PChargerInputVoltage.
Theinternaln-channelreverseblockMOSFET(RBFET)isconnectedbetweenVBUSandPMIDwithVBUSonsource.
Placea1-FceramiccapacitorfromVBUStoPGNDandplaceitascloseaspossibletoIC.
PSELPSEL2IPowersourceselectioninput.
HighindicatesaUSBhostsourceandLowindicatesanadaptersource.
–D+2IPositivelineoftheUSBdatalinepair.
D+/D–basedUSBhost/chargingportdetection.
Thedetectionincludesdatacontactdetection(DCD),primarydetectioninbc1.
2,andnon-standardadapters.
AnalogPG–3OOpendrainactivelowpowergoodindicator.
Connecttothepulluprailvia10-kΩresistor.
LOWindicatesagoodinputsourceiftheinputvoltageisbetweenUVLOandACOV,aboveSLEEPmodethreshold,andcurrentlimitisabove30mA.
–D–3INegativelineoftheUSBdatalinepair.
D+/D–basedUSBhost/chargingportdetection.
Thedetectionincludesdatacontactdetection(DCD),primarydetectioninbc1.
2,andnon-standardadapters.
AnalogSTATSTAT4OOpendrainchargestatusoutputtoindicatevariouschargeroperation.
Connecttothepulluprailvia10-kΩresistor.
LOWindicateschargeinprogress.
HIGHindicateschargecompleteorchargedisabled.
Whenanyfaultconditionoccurs,STATpininthechargeblinksat1Hz.
SCLSCL5II2CInterfaceclock.
ConnectSCLtothelogicrailthrougha10-kΩresistor.
SDASDA6I/OI2CInterfacedata.
ConnectSDAtothelogicrailthrougha10-kΩresistor.
INTINT7OOpen-drainInterruptOutput.
ConnecttheINTtoalogicrailvia10kΩresistor.
TheINTpinsendsactivelow,256-spulsetohosttoreportchargerdevicestatusandfault.
OTGOTG8IUSBcurrentlimitselectionpinduringbuckmode,andactivehighenablepinduringboostmode.
DigitalForbq24296,wheninbuckmodewithUSBhost(PSEL=High),whenOTG=High,IINlimit=500mAandwhenOTG=Low,IINlimit=100mA.
Forbq24297,wheninbuckmodewithUSBhost,whenOTG=High,IINlimit=500mAandwhenOTG=Low,IINlimit=100mA.
TheboostmodeisactivatedwhentheREG01[5]=1andOTGpinisHigh.
CECE9IActivelowChargeEnablepin.
BatterychargingisenabledwhenREG01[5:4]=01andCEpin=Low.
CEpinmustbepulledhighorlow.
4Copyright2013–2014,TexasInstrumentsIncorporatedbq24296,bq24297www.
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cnZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014PinFunctions(continued)PINNUMBERTYPEDESCRIPTIONbq24296bq24297ILIMILIM10IILIMpinsetsthemaximuminputcurrentlimitbyregulatingtheILIMvoltageat1V.
AresistorisconnectedfromILIMpintogroundtosetthemaximumlimitasIINMAX=(1V/RILIM)*KILIM.
TheactualinputcurrentlimitistheloweronesetbyILIMandbyI2CREG00[2:0].
TheminimuminputcurrentprogrammedonILIMpinis500mA.
TSTS11ITemperaturequalificationvoltageinput.
Connectanegativetemperaturecoefficientthermistor.
ProgramtemperaturewindowwitharesistordividerfromREGNtoTStoGND.
ChargesuspendsorBoostAnalodisablewhenTSpinisoutofrange.
A103AT-2thermistorisrecommended.
gQONQON12IBATFETenablecontrolinshippingmode.
Alogiclowtohightransitiononthispinwithminimum2-mshighlevelturnsonBATFETtoexitshippingmode.
Ithasinternal1-MΩ(Typ)pulldown.
Forbackwardcompatibility,whenBATFETenablecontrolfunctionisnotused,thepincanbenoconnectortiedtoTSpin(10-kΩNTCthermisteronly).
(RefertoShippingModefordetaildescription).
BATBAT13,14PBatteryconnectionpointtothepositivepinofthebatterypack.
TheinternalBATFETisconnectedbetweenBATandSYS.
Connecta10FcloselytotheBATpin.
SYSSYS15,16ISystemconnectionpoint.
TheinternalBATFETisconnectedbetweenBATandSYS.
Whenthebatteryfallsbelowtheminimumsystemvoltage,switch-modeconverterkeepsSYSabovetheminimumsystemvoltage.
PGNDPGND17,18PPowergroundconnectionforhigh-currentpowerconverternode.
Internally,PGNDisconnectedtothesourceofthen-channelLSFET.
OnPCBlayout,connectdirectlytogroundconnectionofinputandoutputcapacitorsofthecharger.
AsinglepointconnectionisrecommendedbetweenpowerPGNDandtheanalogGNDneartheICPGNDpin.
SWSW19,20OSwitchingnodeconnectingtooutputinductor.
InternallySWisconnectedtothesourceofthen-channelHSFETandthedrainofthen-channelLSFET.
Connectthe0.
047-FbootstrapcapacitorfromSWtoBTST.
BTSTBTST21PPWMhighsidedriverpositivesupply.
Internally,theBTSTisconnectedtotheanodeoftheboost-strapdiode.
Connectthe0.
047-FbootstrapcapacitorfromSWtoBTST.
REGNREGN22PPWMlowsidedriverpositivesupplyoutput.
Internally,REGNisconnectedtothecathodeoftheboost-strapdiode.
Connecta4.
7-F(10-Vrating)ceramiccapacitorfromREGNtoanalogGND.
ThecapacitorshouldbeplacedclosetotheIC.
REGNalsoservesasbiasrailofTSpin.
PMIDPMID23OConnectedtothedrainofthereverseblockingMOSFETandthedrainofHSFET.
Giventhetotalinputcapacitance,connecta1-FcapacitoronVBUStoPGND,andtherecommended8.
2FormoreonPMIDtoPGND.
ThermalPadThermalPad–PExposedpadbeneaththeICforheatdissipation.
Alwayssolderthermalpadtotheboard,andhaveviasonthethermalpadplanestar-connectingtoPGNDandgroundplaneforhigh-currentpowerconverter.
Copyright2013–2014,TexasInstrumentsIncorporated5bq24296,bq24297ZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014www.
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cn8Specifications8.
1AbsoluteMaximumRatings(1)MINMAXUNITVBUS(converternotswitching)–215(2)VPMID(converternotswitching)–0.
315(2)VSTAT,PG–0.
312VBTST–0.
312VSW–27V8(PeakVoltagefor20ns(withrespecttoGND)duration)BAT,SYS(converternotswitching)–0.
36VSDA,SCL,INT,OTG,ILIM,REGN,TS,QON,CE,D+,D–,–0.
37VPSELBTSTTOSW–0.
37VPGNDtoGND–0.
30.
3VOutputsinkcurrentINT,STAT,PG6mAJunctiontemperature–40150°CStoragetemperaturerange,Tstg–65150°C(1)Stressesbeyondthoselistedunderabsolutemaximumratingsmaycausepermanentdamagetothedevice.
Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderrecommendedoperatingconditionsisnotimplied.
Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
Allvoltagevaluesarewithrespecttothenetworkgroundpinunlessotherwisenoted.
(2)VBUSisspecifiedupto16Vforamaximumof24hoursundernoloadconditions.
8.
2ESDRatingsVALUEUNITHumanbodymodel(HBM),perANSI/ESDA/JEDECJS-001(1)1000VV(ESD)ElectrostaticdischargeChargeddevicemodel(CDM),perJEDECspecificationJESD22-250VC101(2)(1)JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess.
(2)JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess.
8.
3RecommendedOperatingConditionsMINMAXUNITVINInputvoltage3.
96.
2(1)VIINInputcurrent(VBUS)3AISYSOutputcurrent(SYS)3.
5AVBATBatteryvoltage4.
4VFastchargingcurrent3AIBATDischargingcurrentwithinternalMOSFET5.
5ATAOperatingfree-airtemperaturerange–4085°C(1)TheinherentswitchingnoisevoltagespikesshouldnotexceedtheabsolutemaximumratingoneithertheBTSTorSWpins.
Atightlayoutminimizesswitchingnoise.
6版权2013–2014,TexasInstrumentsIncorporatedbq24296,bq24297www.
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cnZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER20148.
4ThermalInformationbq24296,bq24297THERMALMETRIC(1)UNITRGE(24PIN)RθJAJunction-to-ambientthermalresistance32.
2RθJCtopJunction-to-case(top)thermalresistance29.
8RθJBJunction-to-boardthermalresistance9.
1°C/WψJTJunction-to-topcharacterizationparameter0.
3ψJBJunction-to-boardcharacterizationparameter9.
1RθJCbotJunction-to-case(bottom)thermalresistance2.
2(1)Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953.
8.
5ElectricalCharacteristicsVVBUS_UVLOZVBAT+VSLEEP,TJ=–40°Cto125°CandTJ=25°Cfortypicalvaluesunlessothernoted.
PARAMETERTESTCONDITIONSMINTYPMAXUNITQUIESCENTCURRENTSVVBUSVUVLO,VVBUS>VBAT,converternotswitching1.
53mAVVBUS>VUVLO,VVBUS>VBAT,converterswitching,VBAT=IVBUSInputsupplycurrent(VBUS)4mA3.
2V,ISYS=0AVVBUS>VUVLO,VVBUS>VBAT,converterswitching,charge3.
5mAdisable,VBAT=3.
8V,ISYS=100AVBAT=4.
2V,Boostmode,IVBUS=0A,converterIBOOSTBatterydischargecurrentinboostmode3.
5mAswitchingVBUS/BATPOWERUPVVBUS_OPVBUSoperatingvoltage3.
96.
2VVVBUS_UVLOZVVBUSrising3.
6VVBUSforactiveI2C,nobatteryVSLEEPSleepmodefallingthresholdVVBUSfalling,VVBUS-VBAT3580120mVVSLEEPZSleepmoderisingthresholdVVBUSrising,VVBUS-VBAT170250350mVVACOVVBUSover-voltagerisingthresholdVVBUSrising6.
26.
46.
6VVACOV_HYSTVBUSover-voltagefallinghysteresisVVBUSfalling250mVVBAT_UVLOZVBATrising2.
3VBatteryforactiveI2C,noVBUSVBAT_DPLBatterydepletionthresholdVBATfalling2.
42.
6VVBAT_DPL_HYBatterydepletionrisinghysteresisVBATrising200mVVVBUSMINBadadapterdetectionthresholdVVBUSfalling3.
8VIBADSRCBadadapterdetectioncurrentsource30mA版权2013–2014,TexasInstrumentsIncorporated7bq24296,bq24297ZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014www.
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cnElectricalCharacteristics(接接下下页页)VVBUS_UVLOZVBAT+VSLEEP,TJ=–40°Cto125°CandTJ=25°Cfortypicalvaluesunlessothernoted.
PARAMETERTESTCONDITIONSMINTYPMAXUNITPOWERPATHMANAGEMENTIsys=0A,BATFET(Q4)off,VBATupto4.
2V,VSYS_MAXTypicalsystemregulationvoltage3.
54.
35VREG01[3:1]=101,VSYSMIN=3.
5VVSYS_MINSystemvoltageoutpuREG01[3:1]=101,VSYSMIN=3.
5V3.
53.
65VTopreverseblockingMOSFETon-RON(RBFET)2841mΩresistancebetweenVBUSandPMIIDTJ=–40°C–85°C3951InternaltopswitchingMOSFETon-RON(HSFET)mΩresistancebetweenPMIDandSWTJ=-40°C–125°C3958TJ=–40°C–85°C6182InternalbottomswitchingMOSFETon-RON(LSFET)mΩresistancebetweenSWandPGNDTJ=-40°C–125°C6190BATFETforwardvoltageinsupplementVFWDBATdischargecurrent10mA30mVmodeVSYS_BATSYS/BATcomparatorVSYSfalling70mVVBATGDBatterygoodcomparatorrisingthresholdVBATrising3.
55VVBATGD_HYSTBatterygoodcomparatorfallingthresholdVBATfalling100mVBATTERYCHARGERVBAT_REG_ACCChargevoltageregulationaccuracyVBAT=4.
112Vand4.
208V–0.
5%0.
5%VBAT=3.
8V,ICHG=1024mA,TJ=25°C-4%4%IICHG_REG_ACCFastchargecurrentregulationaccuracyVBAT=3.
8V,ICHG=1024mA,TJ=-20°C–125°C-7%7%VBAT=3.
8V,ICHG=1792mA,TJ=-20°C–125°C–10%10%VBAT=3.
1V,ICHG=104mA,REG02=03andREG02[0]ICHG_20pctChargecurrentwith20%optionon75175mA=1VBATLOWVBatteryLOWVfallingthresholdFastchargetoprecharge,REG04[1]=12.
62.
82.
9VPrechargetofastcharge,REG04[1]=1VBATLOWV_HYSTBatteryLOWVrisingthreshold2.
83.
03.
1V(Typical200-mVhysteresis)IPRECHG_ACCPrechargecurrentregulationaccuracyVBAT=2.
6V,ICHG=256mA–20%20%ITYP_TERM_ACCTypicalterminationcurrentITERM=256mA,ICHG=2048mA265mAITERM_ACCTerminationcurrentaccuracyITERM=256mA,ICHG=2048mA–22.
5%22.
5%VSHORTBatteryshortvoltageVBATfalling2.
0VVSHORT_HYSTBatteryShortVoltagehysteresisVBATrising200mVISHORTBatteryshortcurrentVBATVBAT+VSLEEP,TJ=–40°Cto125°CandTJ=25°Cfortypicalvaluesunlessothernoted.
PARAMETERTESTCONDITIONSMINTYPMAXUNITVD–_LOWdatrefD–lowcomparatorthreshold250400mVRD–_DWND–pulldownforconnectioncheck14.
2524.
8kΩChargingtimerwith100mAUSBhostintSDP_DEFAULT45minsdefaultmodeD+lowcomparatorthresholdfornon-Vadpt1_loAspercentageofREGN,0°C–85°C(1)46.
5%48%49.
5%standardadapterDivider-1D+lowcomparatorthresholdfornon-Vadpt1_hiAspercentageofREGN,0°C–85°C(1)58.
5%60%61.
5%standardadapterdivider-1D+lowcomparatorthresholdfornon-Vadpt2_loAspercentageofREGN,0°C–85°C(1)15.
5%17%18.
5%standardadapterdivider-2D+lowcomparatorthresholdforNon-Vadpt2_hiAspercentageofREGN,0°C–85°C(1)28.
5%30%31.
5%standardadapterdivider-2D-lowcomparatorthresholdfornon-Vadpt3_loAspercentageofREGN,0°C–85°C(1)46.
5%48%49.
5%standardadapterdivider-3D-highcomparatorthresholdfornon-Vadpt3_hiAspercentageofREGN,0°C–85°C(1)58.
5%60%61.
5%standardadapterdivider-3BATOVER-VOLTAGEPROTECTIONVBATOVPBatteryover-voltagethresholdVBATrising,aspercentageofVBAT_REG104%VBATOVP_HYSTBatteryover-voltagehysteresisVBATfalling,aspercentageofVBAT_REG2%Batteryover-voltagedeglitchtimetotBATOVP1sdisablechargeTHERMALREGULATIONANDTHERMALSHUTDOWNTJunction_REGJunctiontemperatureregulationaccuracyREG06[1:0]=11120°CTSHUTThermalshutdownrisingtemperatureTemperatureincreasing160°CTSHUT_HYSThermalshutdownhysteresis30°CThermalshutdownrisingdeglitchTemperatureincreasingdelay1msThermalshutdownfallingdeglitchTemperaturedecreasingdelay1msCOLD/HOTTHERMISTERCOMPARATORColdtemperaturethreshold,TSpinVLTFChargersuspendscharge.
aspercentagetoVREGN73%73.
5%74%voltagerisingthresholdColdtemperaturehysteresis,TSpinVLTF_HYSAspercentagetoVREGN0.
4%voltagefallingHottemperatureTSpinvoltagerisingVHTFAspercentagetoVREGN46.
6%47.
2%48.
8%thresholdCut-offtemperatureTSpinvoltagefallingVTCOAspercentagetoVREGN44.
2%44.
7%45.
2%thresholdDeglitchtimefortemperatureoutofrangeVTS>VLTF,orVTSVBAT+VSLEEP,TJ=–40°Cto125°CandTJ=25°Cfortypicalvaluesunlessothernoted.
PARAMETERTESTCONDITIONSMINTYPMAXUNITHottemperaturethreshold2,TSpinAspercentagetoVREGNREG06[3:2]=10VBHOT229.
5%30%30.
5%voltagefallingthreshold(Approx.
65°Cw/103AT)AspercentagetoVREGNREG06[3:2]=10VBHOT2_HYS3%(Approx.
3°Cw/103AT)CHARGEOVER-CURRENTCOMPARATORHSFETcyclebycycleover-currentIHSFET_OCP5.
37.
5AthresholdIBATFET_OCPSystemoverloadthreshold5.
56.
6ALSFETchargeunder-currentfallingVLSFET_UCPFromsyncmodetonon-syncmode100mAthresholdPWMSwitchingfrequency,anddigitalFSW130015001700kHzclockDMAXMaximumPWMdutycycle97%VBTST-VSWwhenLSFETrefreshpulseisrequested,VBTST_REFRESHBootstraprefreshcomparatorthreshold3.
6VVBUS=5VBOOSTMODEOPERATIONVOTG_REG_ACCOTGoutputvoltageI(VBUS)=0,REG06[7:4]=0111(4.
998V)5VVOTG_REG_ACCOTGoutputvoltageaccuracyI(VBUS)=0,REG06[7:4]=0111(4.
998V)-3%3%VOTG_BATBatteryvoltageexitingOTGmodeBATfalling,REG04[1]=12.
9VREG01[0]=01AIOTGOTGmodeoutputcurrentREG01[0]=11.
5AVOTG_OVPOTGover-voltagethresholdRisingthreshold5.
86VVOTG_OVP_HYSOTGover-voltagethresholdhysteresisFallingthreshold300mVIOTG_LSOCPLSFETcyclebycyclecurrentlimit5AIOTG_HSZCPHSFETundercurrentfallingthreshold100mAREG01[0]=01.
001.
151.
30IRBFET_OCPRBFETover-currentthresholdAREG01[0]=11.
501.
701.
90REGNLDOVVBUS=6V,IREGN=40mA4.
855.
5VVREGNREGNLDOoutputvoltageVVBUS=5V,IREGN=20mA4.
74.
8VIREGNREGNLDOcurrentlimitVVBUS=5V,VREGN=3.
8V50mALOGICI/OPINCHARACTERISTICS(OTG,CE,STAT,QON,PSEL,PG)VILOInputlowthreshold0.
4VInputhighthreshold(CE,STAT,QON,VIH1.
3VPSEL,PG)VIH_OTGInputhighthreshold(OTG)1.
1VVOUT_LOOutputlowsaturationvoltageSinkcurrent=5mA0.
4VHighlevelleakagecurrent(OTG,CE,IBIASPull-uprail1.
8V1ASTAT,PSEL,PG)IBIASHighlevelleakagecurrent(QON)Pull-uprail3.
6V8AI2CINTERFACE(SDA,SCL,INT)VIHInputhighthresholdlevelVPULL-UP=1.
8V,SDAandSCL1.
3VVILInputlowthresholdlevelVPULL-UP=1.
8V,SDAandSCL0.
4VVOLOutputlowthresholdlevelSinkcurrent=5mA0.
4VIBIASHigh-levelleakagecurrentVPULL-UP=1.
8V,SDAandSCL1AfSCLSCLclockfrequency400kHzDIGITALCLOCKANDWATCHDOGTIMERfHIZDigitalcrudeclockREGNLDOdisabled153550kHzfDIGDigitalclockREGNLDOenabled130015001700kHz10版权2013–2014,TexasInstrumentsIncorporatedbq24296,bq24297www.
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cnZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER20148.
6TimingRequirementsMINTYPMAXUNITVBUS/BATPOWERUPtBADSRCBadsourcedetectionduration30msBOOSTMODEOPERATIONtOTG_OCP_OFFOTGmodeover-currentprotectionoffcycletime32mstOTG_OCP_ONOTGmodeover-currentprotectiononcycletime260sQONTIMINGtQONQONpinhightimetoturnonBATFET2msDIGITALCLOCKANDWATCHDOGTIMERREGNLDOdisabled112160tWDTREG05[5:4]=11secREGNLDOenabled136160图图1.
I2C-CompatibleInterfaceTimingDiagram8.
7TypicalCharacteristics表表1.
TableofFiguresFIGUREChargingEfficiencyvsChargingCurrent(DCR=10mΩ)图2SystemEfficiencyvsSystemLoadCurrent(DCR=10mΩ)图3BoostModeEfficiencyvsVBUSLoadCurrent(DCR=10mΩ)图4SYSVoltageRegulationvsSystemLoadCurrent图5BoostModeVBUSVoltageRegulation(TypicalOutput=4.
998V,REG06[7:4]=0111)vsVBUSLoadCurrent图6SYSVoltagevsTemperature图7BATVoltagevsTemperature图8InputCurrentLimitvsTemperature图9ChargeCurrentvsPackageTemperature图10版权2013–2014,TexasInstrumentsIncorporated11bq24296,bq24297ZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014www.
ti.
com.
cn图图2.
ChargeEfficiencyvsChargeCurrent图图3.
SystemEfficiencyvsSystemLoadCurrent图图4.
BoostModeEfficiency图图5.
SYSVoltageRegulationvsVBUSLoadCurrentvsSystemLoadCurrentTypicalOutput=4.
998V,REG06[7:4]=0111图图6.
BoostModeVBUSVoltageRegulation图图7.
SYSVoltagevsTemperaturevsVBUSLoadCurrent12版权2013–2014,TexasInstrumentsIncorporatedbq24296,bq24297www.
ti.
com.
cnZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014图图8.
BATVoltagevsTemperature图图9.
InputCurrentLimitvsTemperature图图10.
ChargeCurrentvsPackageTemperature版权2013–2014,TexasInstrumentsIncorporated13bq24296,bq24297ZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014www.
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cn9DetailedDescription9.
1OverviewThebq24296,bq24297isanI2CcontrolledpowerpathmanagementdeviceandasinglecellLi-Ionbatterycharger.
Itintegratestheinputreverse-blockingFET(RBFET,Q1),high-sideswitchingFET(HSFET,Q2),low-sideswitchingFET(LSFET,Q3),andbatteryFET(BATFET,Q4)betweensystemandbattery.
Thedevicealsointegratesthebootstrapdiodeforthehigh-sidegatedrive.
14版权2013–2014,TexasInstrumentsIncorporatedbq24296,bq24297www.
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cnZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER20149.
2FunctionalBlockDiagram版权2013–2014,TexasInstrumentsIncorporated15bq24296,bq24297ZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014www.
ti.
com.
cn9.
3FeatureDescription9.
3.
1DevicePowerUp9.
3.
1.
1Power-On-Reset(POR)TheinternalbiascircuitsarepoweredfromthehighervoltageofVBUSandBAT.
WhenVBUSorVBATrisesaboveUVLOZ,thesleepcomparator,batterydepletioncomparatorandBATFETdriverareactive.
I2Cinterfaceisreadyforcommunicationandalltheregistersareresettodefaultvalue.
ThehostcanaccessalltheregistersafterPOR.
9.
3.
1.
2PowerUpfromBatterywithoutDCSourceIfonlybatteryispresentandthevoltageisabovedepletionthreshold(VBAT_DEPL),theBATFETturnsonandconnectsbatterytosystem.
TheREGNLDOstaysofftominimizethequiescentcurrent.
ThelowRDSONinBATFETandthelowquiescentcurrentonBATminimizetheconductionlossandmaximizethebatteryruntime.
Duringbothboostandchargemode,thedevicealwaysmonitorsthedischargecurrentthroughBATFET.
Whenthesystemisoverloadedorshorted,thedevicewillimmediatelyturnoffBATFETandkeepBATFEToffuntiltheinputsourceplugsinagain.
9.
3.
1.
2.
1BATFETTurnOffTheBATFETcanbeforcedoffbythehostthroughI2CREG07[5].
ThisbitallowstheusertoindependentlyturnofftheBATFETwhenthebatteryconditionbecomesabnormalduringcharging.
WhenBATFETisoff,thereisnopathtochargeordischargethebattery.
Whenbatteryisnotattached,theBATFETshouldbeturnedoffbysettingREG07[5]to1todisablechargingandsupplementmode.
9.
3.
1.
2.
2ShippingModeToextendbatterylifeandminimizepowerwhensystemispoweredoffduringsystemidle,shipping,orstorage,thedevicecanturnoffBATFETsothatthesystemvoltageiszerotominimizetheleakage.
TheBATFETcanbeturnedoffbysettingREG07[5](BATFET_DISABLE)bit.
InordertokeepBATFEToffduringshippingmode,thehosthastodisablethewatchdogtimer(REG05[5:4]=00)anddisableBATFET(REG07[5]=1)atthesametime.
OncetheBATFETisdisabled,oneofthefollowingeventscanturnonBATFETandclearREG07[5](BATFET_DISABLE)bit.
1.
Pluginadapter2.
WriteREG07[5]=03.
watchdogtimerexpiration4.
Registerreset(REG01[7]=1)5.
AlogiclowtohightransitiononQONpin(referto图11fordetailtiming)图图11.
QONTiming9.
3.
1.
3PowerUpfromDCSourceWhentheDCsourceplugsin,thechargerdevicecheckstheinputsourcevoltagetoturnonREGNLDOandallthebiascircuits.
Italsocheckstheinputcurrentlimitbeforestartsthebuckconverter.
16版权2013–2014,TexasInstrumentsIncorporatedbq24296,bq24297www.
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cnZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014FeatureDescription(接接下下页页)9.
3.
1.
3.
1REGNLDOTheREGNLDOsuppliesinternalbiascircuitsaswellastheHSFETandLSFETgatedrive.
TheLDOalsoprovidesbiasrailtoTSexternalresistors.
Thepull-uprailofSTATandPG(bq24296)canbeconnectedtoREGNaswell.
TheREGNisenabledwhenalltheconditionsarevalid.
1.
VBUSaboveVVBUS_UVLOZ2.
VBUSaboveVBAT+VSLEEPZinbuckmodeorVBUSbelowVBAT+VSLEEPinboostmode3.
Aftertypical220-msdelay(100msminimum)iscompleteIfoneoftheaboveconditionsisnotvalid,thedeviceisinhighimpedancemode(HIZ)withREGNLDOoff.
ThedevicedrawslessthanIVBUS(15Atypical)fromVBUSduringHIZstate.
ThebatterypowersupthesystemwhenthedeviceisinHIZ.
9.
3.
1.
3.
2InputSourceQualificationAfterREGNLDOpowersup,thedevicechecksthecurrentcapabilityoftheinputsource.
Theinputsourcehastomeetthefollowingrequirementstostartthebuckconverter.
1.
VBUSvoltagebelowVACOV(notinVBUSover-voltage)2.
VBUSvoltageaboveVBADSRC(3.
8Vtypical)whenpullingIBADSRC(30mAtypical)(poorsourcedetection)Oncetheinputsourcepassesalltheconditionsabove,thestatusregisterREG08[2]goeshighandthePGpin(bq24296)goeslow.
AnINTisassertedtothehost.
Ifthedevicefailsthepoorsourcedetection,itwillrepeatthedetectionevery2seconds.
9.
3.
1.
3.
3InputCurrentLimitDetectionTheUSBportsonpersonalcomputersareconvenientchargingsourceforportabledevices(PDs).
IftheportabledeviceisattachedtoaUSBhost,theUSBspecificationrequirestheportabledevicetodrawlimitedcurrent(100mA/500mAinUSB2.
0,and150mA/900mAinUSB3.
0).
Iftheportabledeviceisattachedtoachargingport,itisallowedtodrawupto3A.
AfterthePGisLOW(bq24296)orREG08[2]goesHIGH,thechargerdevicealwaysrunsinputcurrentlimitdetectionwhenaDCsourceplugsinunlessthechargerisinHIZduringhostmode.
Thebq24297followsBatteryChargingSpecification1.
2(BC1.
2)todetectinputsourcethroughUSBD+/D-lines.
Thebq24296setsinputcurrentlimitthroughPSELandOTGpins.
Aftertheinputcurrentlimitdetectionisdone,thedetectionresultisreportedinVBUS_STATregisters(REG08[7:6])andinputcurrentlimitisupdatedinIINLIMregister(REG00[2:0]).
Inadditon,hostcanwritetoREG00[2:0]tochangetheinputcurrentlimit.
9.
3.
1.
3.
4D+/D–DetectionSetsInputCurrentLimit(bq24297)Thebq24297containsaD+/D–basedinputsourcedetectiontoprogramtheinputcurrentlimit.
TheD+/D-detectionhasthreesteps:datacontactdetect(DCD),primarydetection,andnon-standardadapterdetection.
Whenthechargingsourcepassesdatacontactdetect,thedevicewouldproceedtorunprimarydetection.
Otherwisethechargerwouldproceedtorunnon-standardadapterdetection.
版权2013–2014,TexasInstrumentsIncorporated17bq24296,bq24297ZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014www.
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cnFeatureDescription(接接下下页页)图图12.
USBD+/D-DetectionDCD(DataContactDetection)usesacurrentsourcetodetectwhentheD+/D–pinshavemadecontactduringanattachevent.
Theprotocolfordatacontactdetectisasfollows:DetectVBUSpresentandREG08[2]=1(powergood)TurnonD+IDP_SRCandtheD–pull-downresistorRDM_DWNfor40msIftheUSBconnectorisproperlyattached,theD+linegoesfromHIGHtoLOW,waitupto0.
5sec.
TurnoffIDP_SRCanddisconnectRDM_DWNTheprimarydetectionisusedtodistinguishbetweenUSBhost(StandardDownStreamPort,orSDP)anddifferenttypeofchargingports(ChargingDownStreamPort,orCDP,andDedicatedChargingPort,orDCP).
Theprotocolforprimarydetectionisasfollows:TurnonVDP_SRConD+andIDM_SINKonD–for40msIfPDisattachedtoaUSBhost(SDP),theD–islow.
IfPDisattachedtoachargingport(CDPorDCP),theD–ishighTurnoffVDP_SRCandIDM_SINK表2showstheinputcurrentlimitsettingafterD+/D–detection.
表表2.
bq24297USBD+/D–DetectionD+/D–DETECTIONOTGINPUTCURRENTLIMITREG08[7:6]0.
5sectimerexpiredinDCD—Proceedtonon-standard00(D+/D-floating)adapterdetectionUSBhostLOW100mA01USBhostHIGH500mA01Chargingport—3A1018版权2013–2014,TexasInstrumentsIncorporatedbq24296,bq24297www.
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com.
cnZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014WhenDCD0.
5sectimerexpires,thenon-standardadapterdetectionisusedtodistinguishthreedifferentdividerbiasconditionsonD+/D-pins.
Whennon-standardadapterisdetected,theinputcurrentlimit(REG0[2:0])issetbasedonthetableshownbelowandREG08[7:6]issetto10(Adapterport).
Ifnon-standardadapterisnotdetected,REG08[7:6]issetto00(Unknown)andtheinputcurrentlimitissetinREG0[2:0]to500mAbydefault.
表表3.
bq24297Non-StandardAdapterDetectionNON-INPUTSTANDARDD+THRESHOLDD-THRESHOLDCURRENTADAPTERLIMITDivider1Vadpt1_loVadpt1_hi2.
0AForVBUS=5V,typicalrange2.
4V3.
1VDivider2Vadpt2_loVadpt3_hiVadpt3_loForVBUS=5V,typicalrange2.
4VVSYSMIN),1–InVSYSMINregulation(BATVBATUVLOconnectedtoBAT.
Thesourcecurrentratingneedstobeatleast3AinorderforthebuckconverterofthechargertoprovidemaximumoutputpowertoSYS.
12Layout12.
1LayoutGuidelinesTheswitchingnoderiseandfalltimesshouldbeminimizedforminimumswitchingloss.
Properlayoutofthecomponentstominimizehighfrequencycurrentpathloop(see图53)isimportanttopreventelectricalandmagneticfieldradiationandhighfrequencyresonantproblems.
HereisaPCBlayoutprioritylistforproperlayout.
LayoutPCBaccordingtothisspecificorderisessential.
1.
PlaceinputcapacitorascloseaspossibletoPMIDpinandGNDpinconnectionsanduseshortestcoppertraceconnectionorGNDplane.
2.
PlaceinductorinputpintoSWpinascloseaspossible.
Minimizethecopperareaofthistracetolowerelectricalandmagneticfieldradiationbutmakethetracewideenoughtocarrythechargingcurrent.
Donotusemultiplelayersinparallelforthisconnection.
Minimizeparasiticcapacitancefromthisareatoanyothertraceorplane.
3.
PutoutputcapacitorneartotheinductorandtheIC.
GroundconnectionsneedtobetiedtotheICgroundwithashortcoppertraceconnectionorGNDplane.
4.
Routeanaloggroundseparatelyfrompowerground.
Connectanaloggroundandconnectpowergroundseparately.
Connectanaloggroundandpowergroundtogetherusingthermalpadasthesinglegroundconnectionpoint.
Orusinga0Ωresistortotieanaloggroundtopowerground.
5.
Usesinglegroundconnectiontotiechargerpowergroundtochargeranalogground.
JustbeneaththeIC.
Usegroundcopperpourbutavoidpowerpinstoreduceinductiveandcapacitivenoisecoupling.
6.
DecouplingcapacitorsshouldbeplacednexttotheICpinsandmaketraceconnectionasshortaspossible.
7.
ItiscriticalthattheexposedthermalpadonthebacksideoftheICpackagebesolderedtothePCBground.
EnsurethattherearesufficientthermalviasdirectlyundertheIC,connectingtothegroundplaneontheotherlayers.
8.
Theviasizeandnumbershouldbeenoughforagivencurrentpath.
SeetheEVMdesignfortherecommendedcomponentplacementwithtraceandvialocations.
FortheVQFNinformation,refertoSCBA017andSLUA271.
图图53.
HighFrequencyCurrentPath版权2013–2014,TexasInstrumentsIncorporated45bq24296,bq24297ZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER2014www.
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cn12.
2LayoutExample图图54.
LayoutExample46版权2013–2014,TexasInstrumentsIncorporatedbq24296,bq24297www.
ti.
com.
cnZHCSBL6B–SEPTEMBER2013–REVISEDNOVEMBER201413器器件件和和文文档档支支持持13.
1文文档档支支持持13.
1.
1相相关关文文档档《bq24296/7EVM(PWR021)用户指南》(SLUUAQ1)《四方扁平无引线逻辑器件封装应用报告》(SCBA017)《QFN/SONPCB连接应用报告》(SLUA271)13.
2相相关关链链接接以下表格列出了快速访问链接.
范围包括技术文档、支持与社区资源、工具和软件,并且可以快速访问样片或购买链接.
表表20.
相相关关链链接接器器件件产产品品文文件件夹夹样样片片与与购购买买技技术术文文档档工工具具与与软软件件支支持持与与社社区区bq24296请单击此处请单击此处请单击此处请单击此处请单击此处bq24297请单击此处请单击此处请单击此处请单击此处请单击此处13.
3商商标标Alltrademarksarethepropertyoftheirrespectiveowners.
13.
4静静电电放放电电警警告告这些装置包含有限的内置ESD保护.
存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止MOS门极遭受静电损伤.
13.
5术术语语表表SLYZ022—TI术语表.
这份术语表列出并解释术语、首字母缩略词和定义.
14机机械械封封装装和和可可订订购购信信息息以下页中包括机械封装和可订购信息.
这些信息是针对指定器件可提供的最新数据.
这些数据会在无通知且不对本文档进行修订的情况下发生改变.
欲获得该数据表的浏览器版本,请查阅左侧的导航栏.
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comIMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号,中建大厦32楼邮政编码:200122Copyright2015,德州仪器半导体技术(上海)有限公司PACKAGEOPTIONADDENDUMwww.
ti.
com21-Feb-2015Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Lead/BallFinish(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesBQ24296RGERACTIVEVQFNRGE243000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to85BQ24296BQ24296RGETACTIVEVQFNRGE24250Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to85BQ24296BQ24297RGERACTIVEVQFNRGE243000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to85BQ24297BQ24297RGETACTIVEVQFNRGE24250Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to85BQ24297(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheckhttp://www.
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TBD:ThePb-Free/Greenconversionplanhasnotbeendefined.
Pb-Free(RoHS):TI'sterms"Lead-Free"or"Pb-Free"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirementsforall6substances,includingtherequirementthatleadnotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses.
Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieandpackage,or2)lead-baseddieadhesiveusedbetweenthedieandleadframe.
ThecomponentisotherwiseconsideredPb-Free(RoHScompatible)asdefinedabove.
Green(RoHS&noSb/Br):TIdefines"Green"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflameretardants(BrorSbdonotexceed0.
1%byweightinhomogeneousmaterial)(3)MSL,PeakTemp.
-TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclassifications,andpeaksoldertemperature.
(4)Theremaybeadditionalmarking,whichrelatestothelogo,thelottracecodeinformation,ortheenvironmentalcategoryonthedevice.
(5)MultipleDeviceMarkingswillbeinsideparentheses.
OnlyoneDeviceMarkingcontainedinparenthesesandseparatedbya"~"willappearonadevice.
IfalineisindentedthenitisacontinuationofthepreviouslineandthetwocombinedrepresenttheentireDeviceMarkingforthatdevice.
(6)Lead/BallFinish-OrderableDevicesmayhavemultiplematerialfinishoptions.
Finishoptionsareseparatedbyaverticalruledline.
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TAPEANDREELINFORMATION*AlldimensionsarenominalDevicePackageTypePackageDrawingPinsSPQReelDiameter(mm)ReelWidthW1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W(mm)Pin1QuadrantBQ24296RGERVQFNRGE243000330.
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0Q2PACKAGEMATERIALSINFORMATIONwww.
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0PACKAGEMATERIALSINFORMATIONwww.
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