generally512mb

www.
infineon.
comPleasenotethatCypressisanInfineonTechnologiesCompany.
Thedocumentfollowingthiscoverpageismarkedas"Cypress"documentasthisisthecompanythatoriginallydevelopedtheproduct.
PleasenotethatInfineonwillcontinuetooffertheproducttonewandexistingcustomersaspartoftheInfineonproductportfolio.
ContinuityofdocumentcontentThefactthatInfineonoffersthefollowingproductaspartoftheInfineonproductportfoliodoesnotleadtoanychangestothisdocument.
Futurerevisionswilloccurwhenappropriate,andanychangeswillbesetoutonthedocumenthistorypage.
ContinuityoforderingpartnumbersInfineoncontinuestosupportexistingpartnumbers.
Pleasecontinuetousetheorderingpartnumberslistedinthedatasheetforordering.
S29GL01GT/S29GL512T1-Gb(128MB)/512-Mb(64MB),GL-TMirrorBitEclipseFlashCypressSemiconductorCorporation198ChampionCourtSanJose,CA95134-1709408-943-2600DocumentNumber:002-00247Rev.
*LRevisedApril05,2019GeneralDescriptionTheCypressS29GL01GT/512TareMirrorBitEclipseflashproductsfabricatedon45nmprocesstechnology.
Thesedevicesofferafastpageaccesstimeasfastas15ns,withacorrespondingrandomaccesstimeasfastas100ns.
TheyfeatureaWriteBufferthatallowsamaximumof256words/512bytestobeprogrammedinoneoperation,resultinginfastereffectiveprogrammingtimethanstandardprogrammingalgorithms.
Thismakesthesedevicesidealfortoday'sembeddedapplicationsthatrequirehigherdensity,betterperformance,andlowerpowerconsumption.
DistinctiveCharacteristics45nmMirrorBitEclipseTechnologySinglesupply(VCC)forread/program/erase(2.
7Vto3.
6V)VersatileI/OfeatureWideI/Ovoltagerange(VIO):1.
65VtoVCCx8/x16databusAsynchronous32-bytePageread512-byteProgrammingBufferProgramminginPagemultiples,uptoamaximumof512bytesSinglewordandmultipleprogramonsamewordoptionsAutomaticErrorCheckingandCorrection(ECC)—internalhardwareECCwithsinglebiterrorcorrectionSectorEraseUniform128-KBsectorsSuspendandResumecommandsforProgramandEraseoperationsStatusRegister,DataPolling,andReady/BusypinmethodstodeterminedevicestatusAdvancedSectorProtection(ASP)Volatileandnon-volatileprotectionmethodsforeachsectorSeparate2048-byteOne-TimeProgram(OTP)arrayFourlockableregions(SSR0-SSR3)SSR0isFactoryLockedSSR3isPasswordReadProtectCommonFlashInterface(CFI)parametertableTemperatureRange/Grade:Industrial(40°Cto+85°C)IndustrialPlus(40°Cto+105°C)Extended(40°Cto+125°C)Automotive,AEC-Q100Grade3(–40°Cto+85°C)Automotive,AEC-Q100Grade2(–40°Cto+105°C)100,000Program/EraseCycles20-yeardataretentionPackagingOptions56-pinTSOP64-ballLAAFortifiedBGA,13mm11mm64-ballLAEFortifiedBGA,9mm9mm56-ballVBUFortifiedBGA,9mm7mmDocumentNumber:002-00247Rev.
*LPage2of109S29GL01GT/S29GL512TPerformanceSummaryPerformanceSummaryforOperatingTemperatureRangeof40°Cto+85°CMaximumReadAccessTimesDensityVoltageRangeRandomAccessTime(tACC)PageAccessTime(tPACC)CE#AccessTime(tCE)OE#AccessTime(tOE)512MbFullVCC=VIO1001510025VersatileI/OVIO11025110351GbFullVCC=VIO1001510025VersatileI/OVIO1102511035PerformanceSummaryOperatingTemperatureRangeof40°Cto+105°CMaximumReadAccessTimesDensityVoltageRangeRandomAccessTime(tACC)PageAccessTime(tPACC)CE#AccessTime(tCE)OE#AccessTime(tOE)512MbFullVCC=VIO1101511025VersatileI/OVIO12025120351GbFullVCC=VIO1101511025VersatileI/OVIO1202512035PerformanceSummaryOperatingTemperatureRangeof40°Cto+125°CMaximumReadAccessTimesDensityVoltageRangeRandomAccessTime(tACC)PageAccessTime(tPACC)CE#AccessTime(tCE)OE#AccessTime(tOE)512MbFullVCC=VIO1201512025VersatileI/OVIO13025130351GbFullVCC=VIO1201512025VersatileI/OVIO1302513035TypicalProgramandEraseRatesOperation40°Cto+85°C40°Cto+105°C40°Cto+125°CBufferProgramming(512bytes)1.
14MBps1.
14MBps1.
14MBpsSectorErase(128KB)245KBps245KBps245KBpsMaximumCurrentConsumptionOperation40°Cto+85°C40°Cto+105°C40°Cto+125°CActiveReadat5MHz,30pF60mA60mA60mAProgram100mA100mA100mAErase100mA100mA100mAStandby100μA200μA215μAS29GL01GT/S29GL512TDocumentNumber:002-00247Rev.
*LPage3of109Contents1.
ProductOverview4SoftwareInterface2.
AddressSpaceOverlays.
62.
1FlashMemoryArray.
72.
2DeviceIDandCFI(ID-CFI)ASO.
82.
3StatusRegisterASO.
92.
4DataPollingStatusASO.
92.
5SecureSiliconRegionASO.
92.
6SectorProtectionControl.
102.
7ECCStatusASO.
113.
DataProtection123.
1DeviceProtectionMethods.
123.
2CommandProtection123.
3SecureSiliconRegion(OTP)123.
4SectorProtectionMethods.
134.
ReadOperations184.
1AsynchronousRead.
184.
2PageModeRead.
185.
EmbeddedOperations.
195.
1EmbeddedAlgorithmController(EAC)195.
2ProgramandEraseSummary205.
3AutomaticECC215.
4CommandSet.
225.
5StatusMonitoring.
375.
6ErrorTypesandClearingProcedures435.
7EmbeddedAlgorithmPerformanceTable.
466.
DataIntegrity.
496.
1EraseEndurance496.
2DataRetention.
497.
SoftwareInterfaceReference507.
1CommandSummary.
507.
2DeviceIDandCommonFlashInterface(ID-CFI)ASOMap56HardwareInterface8.
SignalDescriptions618.
1AddressandDataConfiguration.
618.
2Input/OutputSummary.
618.
3Word/ByteConfiguration.
628.
4VersatileI/OFeature.
628.
5Ready/Busy#(RY/BY#628.
6HardwareReset.
629.
SignalProtocols.
639.
1InterfaceStates.
639.
2Power-OffwithHardwareDataProtection.
649.
3PowerConservationModes.
649.
4Read659.
5Write6610.
ElectricalSpecifications.
6710.
1AbsoluteMaximumRatings6710.
2ThermalResistance.
6710.
3LatchupCharacteristics6710.
4OperatingRanges.
6810.
5DCCharacteristics.
7010.
6CapacitanceCharacteristics7311.
TimingSpecifications.
7411.
1KeytoSwitchingWaveforms7411.
2ACTestConditions.
7411.
3Power-OnReset(POR)andWarmReset7511.
4ACCharacteristics7712.
PhysicalInterface9312.
156-PinTSOP.
9312.
264-BallFBGA.
9512.
356-BallFBGA.
9813.
SpecialHandlingInstructionsforFBGAPackage10014.
OrderingInformation.
10015.
OtherResources.
10515.
1CypressFlashMemoryRoadmap10515.
2LinkstoSoftware10515.
3LinkstoApplicationNotes.
105DocumentHistoryPage106Sales,Solutions,andLegalInformation109WorldwideSalesandDesignSupport109Products109PSoCSolutions109CypressDeveloperCommunity109TechnicalSupport109DocumentNumber:002-00247Rev.
*LPage4of109S29GL01GT/S29GL512T1.
ProductOverviewTheGL-Tfamilyconsistsof512-Mbto1-Gb,3.
0Vcore,VersatileI/O,non-volatile,flashmemorydevices.
Thesedeviceshavean8-bit(byte)/16-bit(word)widedatabusanduseonlybyte/wordboundaryaddresses.
Allreadaccessesprovide8/16bitsofdataoneachbustransfercycle.
Allwritestake8/16bitsofdatafromeachbustransfercycle.
Figure1.
BlockDiagram[1]TheGL-TfamilycombinesthebestfeaturesofeXecuteInPlace(XIP)andDataStorageflashmemories.
ThisfamilyhasthefastrandomaccessofXIPflashalongwiththehighdensityandfastprogramspeedofDataStorageflash.
Readaccesstoanyrandomlocationtakes100nsto120nsdependingondevicedensityandI/Opowersupplyvoltage.
Eachrandom(initial)accessreadsanentire32-bytealignedgroupofdatacalledaPage.
OtherwordswithinthesamePagemaybereadbychangingonlytheloworder4bitsofwordaddress.
EachaccesswithinthesamePagetakes15nsto25ns.
ThisiscalledPageModeread.
ChanginganyofthehigherwordaddressbitswillselectadifferentPageandbeginanewinitialaccess.
Allreadaccessesareasynchronous.
Input/OutputBuffersX-DecoderY-DecoderChipEnableOutputEnableLogicEraseVoltageGeneratorPGMVoltageGeneratorTimerVCCDetectorStateControlCommandRegisterVCCVSSVIOWE#WP#/ACCCE#OE#STBSTBDQ15-DQ0SectorSwitchesRY/BY#RESET#DataLatchY-GatingCellMatrixAddressLatch**Amax–A0(A-1)BYTE#Note1.
AmaxGL01GT=A25,AmaxGL512T=A24.
DocumentNumber:002-00247Rev.
*LPage5of109S29GL01GT/S29GL512TThedevicecontrollogicissubdividedintotwoparalleloperatingsections,theHostInterfaceController(HIC)andtheEmbeddedAlgorithmController(EAC).
HICmonitorssignallevelsonthedeviceinputsanddrivesoutputsasneededtocompletereadandwritedatatransferswiththehostsystem.
HICdeliversdatafromthecurrentlyenteredaddressspaceonreadtransfers;placeswritetransferaddressanddatainformationintotheEACcommandmemory;notifiestheEACofpowertransition,hardwarereset,andwritetransfers.
TheEAClooksinthecommandmemory,afterawritetransfer,forlegalcommandsequencesandperformstherelatedEmbeddedAlgorithms.
Changingthenon-volatiledatainthememoryarrayrequiresacomplexsequenceofoperationsthatarecalledEmbeddedAlgorithms(EA).
ThealgorithmsaremanagedentirelybythedeviceinternalEAC.
Themainalgorithmsperformprogramminganderaseofthemainarraydata.
Thehostsystemwritescommandcodestotheflashdeviceaddressspace.
TheEACreceivesthecommands,performsallthenecessarystepstocompletethecommand,andprovidesstatusinformationduringtheprogressofanEA.
Theerasedstateofeachmemorybitisalogic1.
Programmingchangesalogic1(HIGH)toalogic0(LOW).
OnlyanEraseoperationisabletochangea0toa1.
Aneraseoperationmustbeperformedonanentire128-KBalignedandlengthgroupofdatacallaSector.
WhenshippedfromCypressallSectorsareerased.
Programmingisdoneviaa512-byteWriteBuffer.
Inx16itispossibletowritefrom1to256words,anywherewithintheWriteBufferbeforestartingaprogrammingoperation.
Withintheflashmemoryarray,each512-bytealignedgroupof512bytesiscalledaLine.
Inx8itispossibletowritefrom1to256bytes,anywherewithintheWriteBufferbeforestartingaprogramoperation.
AprogrammingoperationtransfersvolatiledatafromtheWriteBuffertoanon-volatilememoryarrayLine.
TheoperationiscalledWriteBufferProgramming.
Asthedevicetransferseach32-bytealignedpageofdatathatwasloadedintotheWritebuffertothe512-byteFlasharrayline,internallogicprogramsanECCCodeforthePageintoaportionofthememoryarraynotvisibletothehostsystemsoftware.
TheinternallogiccheckstheECCinformationduringtheinitialaccessofeveryarrayreadoperation.
Ifneeded,theECCinformationcorrectsaonebiterrorduringtheinitialaccesstime.
TheWriteBufferisfilledwith1'safterresetorthecompletionofanyoperationusingtheWriteBuffer.
Anylocationsnotwrittentoa0byaWritetoBuffercommandarebydefaultstillfilledwith1's.
Any1'sintheWriteBufferdonotaffectdatainthememoryarrayduringaprogrammingoperation.
AseachPageofdatathatwasloadedintotheWriteBufferistransferredtoamemoryarrayLine.
SectorsmaybeindividuallyprotectedfromprogramanderaseoperationsbytheAdvancedSectorProtection(ASP)featureset.
ASPprovidesseveral,hardwareandsoftwarecontrolled,volatileandnon-volatile,methodstoselectwhichsectorsareprotectedfromprogramanderaseoperations.
Table1.
S29GL-TAddressMapTypex16x8CountAddressesCountAddressesAddresswithinPage16A3–A032A3–A1AddresswithinWriteBuffer256A7–A0256A7–A1Page4096perSectorA15–A44096perSectorA15–A4Write-Buffer-Line256perSectorA15–A8256perSectorA15–A8Sector1024(1Gb)512(512Mb)Amax–A161024(1Gb)512(512Mb)Amax–A16DocumentNumber:002-00247Rev.
*LPage6of109S29GL01GT/S29GL512TSoftwareInterface2.
AddressSpaceOverlaysThereareseveralseparateaddressspacesthatmayappearwithintheaddressrangeoftheflashmemorydevice.
Oneaddressspaceisvisible(entered)atanygiventime.
FlashMemoryArray:themainnon-volatilememoryarrayusedforstorageofdatathatmayberandomlyaccessedbyasynchronousreadoperations.
ID/CFI:amemoryarrayusedforCypressfactoryprogrammeddevicecharacteristicsinformation.
ThisareacontainstheDeviceIdentification(ID)andCommonFlashInterface(CFI)informationtables.
SecureSiliconRegion(SSR):aOneTimeProgrammable(OTP)non-volatilememoryarrayusedforCypressfactoryprogrammedpermanentdata,andcustomerprogrammablepermanentdata.
LockRegister:anOTPnon-volatilewordusedtoconfiguretheASPfeaturesandlocktheSSR.
PersistentProtectionBits(PPB):anon-volatileflashmemoryarraywithonebitforeachSector.
Whenprogrammed,eachbitprotectstherelatedSectorfromerasureandprogramming.
PPBLock:avolatileregisterbitusedtoenableordisableprogramminganderasureofthePPBbits.
ArrayPassword:anOTPnon-volatilearrayusedtostorea64-bitpasswordusedtoenablechangingthestateofthePPBLockBitwhenusingPasswordModesectorprotection.
SSR3Password:anOTPnon-volatilearrayusedtostorea64-bitpasswordusedtoenablereadingtheSSR3.
DynamicProtectionBits(DYB):avolatilearraywithonebitforeachSector.
Whenset,eachbitprotectstherelatedSectorfromerasureandprogramming.
StatusRegister:avolatileregisterusedtodisplayEmbeddedAlgorithmstatus.
DataPollingStatus:avolatileregisterusedasanalternate,legacysoftwarecompatible,waytodisplayEmbeddedAlgorithmstatus.
ECCStatus:providesthestatusofanyerrordetectionorcorrectionactiontakenwhenreadingtheselectedPage.
ThemainFlashMemoryArrayistheprimaryanddefaultaddressspacebut,itmaybeoverlaidbyoneotheraddressspace,atanyonetime.
EachalternateaddressspaceiscalledanAddressSpaceOverlay(ASO).
EachASOreplaces(overlays)theentireflashdeviceaddressrange.
AnyaddressrangenotdefinedbyaparticularASOaddressmap,isreservedforfutureuse.
AllreadaccessesoutsideofanASOaddressmapreturnsnon-valid(undefined)data.
Thelocationswilldisplayactivelydrivendatabutthemeaningofwhatever1'sor0'sappeararenotdefined.
Therearefourdeviceoperatingmodesthatdeterminewhatappearsintheflashdeviceaddressspaceatanygiventime:ReadModeDataPollingModeStatusRegister(SR)ModeAddressSpaceOverlay(ASO)ModeInReadModetheentireFlashMemoryArraymaybedirectlyreadbythehostsystemmemorycontroller.
ThememorydeviceEmbeddedAlgorithmController(EAC),putsthedeviceinReadmodeduringPower-on,afteraHardwareReset,afteraCommandReset,orafteranEmbeddedAlgorithm(EA)issuspended.
Readaccessesandcommandwritesareacceptedinreadmode.
AsubsetofcommandsareacceptedinreadmodewhenanEAissuspended.
Whileinanymode,theStatusRegisterreadcommandmaybeissuedtocausetheStatusRegisterASOtoappearateverywordaddressinthedeviceaddressspace.
InthisStatusRegisterASOMode,thedeviceinterfacewaitsforareadaccessand,anywriteaccessisignored.
Thenextreadaccesstothedeviceaccessesthecontentofthestatusregister,exitstheStatusRegisterASO,andreturnstotheprevious(calling)modeinwhichtheStatusRegisterreadcommandwasreceived.
InEAmodetheEACisperforminganEmbeddedAlgorithm,suchasprogrammingorerasinganon-volatilememoryarray.
WhileinEAmode,noneofthemainFlashMemoryArrayisreadablebecausetheentireflashdeviceaddressspaceisreplacedbytheDataPollingStatusASO.
DataPollingStatuswillappearateverywordlocationinthedeviceaddressspace.
WhileinEAmode,onlyaProgram/ErasesuspendcommandortheStatusRegisterReadcommandwillbeaccepted.
Allothercommandsareignored.
Thus,nootherASOmaybeenteredfromtheEAmode.
DocumentNumber:002-00247Rev.
*LPage7of109S29GL01GT/S29GL512TWhenanEmbeddedAlgorithmissuspended,theDataPollingASOisvisibleuntilthedevicehassuspendedtheEA.
WhentheEAissuspendedtheDataPollingASOisexitedandFlashArraydataisavailable.
TheDataPollingASOisreenteredwhenthesuspendedEAisresumed,untiltheEAisagainsuspendedorfinished.
WhenanEmbeddedAlgorithmiscompleted,theDataPollingASOisexitedandthedevicegoestotheprevious(calling)mode(fromwhichtheEmbeddedAlgorithmwasstarted).
InASOmode,oneoftheremainingoverlayaddressspacesisentered(overlaidonthemainFlashArrayaddressmap).
OnlyoneASOmaybeenteredatanyonetime.
CommandstothedeviceaffectthecurrentlyenteredASO.
OnlycertaincommandsarevalidforeachASO.
ThesearelistedintheTable21onpage50,ineachASOrelatedsectionofthetable.
ThefollowingASOshavenon-volatiledatathatmaybeprogrammedtochange1'sto0's:SecureSiliconRegionLockRegisterPersistentProtectionBits(PPB)PasswordOnlythePPBASOhasnon-volatiledatathatmaybeerasedtochange0'sto1'sWhenaprogramorerasecommandisissuedwhileoneofthenon-volatileASOsisentered,theEAoperatesontheASO.
TheASOisnotreadablewhiletheEAisactive.
WhentheEAiscompletedtheASOremainsenteredandisagainreadable.
SuspendandResumecommandsareignoredduringanEAoperatingonanyoftheseASOs.
2.
1FlashMemoryArrayTheS29GL-Tfamilyhasuniformsectorarchitecturewithasectorsizeof128kB.
Thefollowingtablesshowthesectorarchitectureofthedifferentdevices.
NoteThesetableshavebeencondensedtoshowsectorrelatedinformationforanentiredeviceonasinglepageSectorsandtheiraddressrangesthatarenotexplicitlylisted(suchasSA1-SA510ontheGL512T)havesectorsstartingandendingaddressesthatformthesamepatternasallothersectorsofthatsize.
Forexample,all128kBsectorshavethepatternXXX0000h-XXXFFFFhinx16andXXX0000h-XXX1FFFFinx8.
Table2.
S29GL01GTSectorandMemoryAddressMapSectorSize(KB)SectorCountSectorRangeAddressRange(16-Bit)AddressRange(8-Bit)Notes1281024SA00000000h-000FFFFh0000000h-001FFFFhSectorStartingAddress:::–SA10233FF0000h-3FFFFFFh7FE0000h-7FFFFFFhSectorEndingAddressTable3.
S29GL512TSectorandMemoryAddressMapSectorSize(KB)SectorCountSectorRangeAddressRange(16-Bit)AddressRange(8-Bit)Notes128512SA00000000h-000FFFFh0000000h-001FFFFhSectorStartingAddress:::–SA5111FF0000h-1FFFFFFh3FE0000h-3FFFFFFhSectorEndingAddressDocumentNumber:002-00247Rev.
*LPage8of109S29GL01GT/S29GL512T2.
2DeviceIDandCFI(ID-CFI)ASOTherearetwotraditionalmethodsforsystemstoidentifythetypeofflashmemoryinstalledinthesystem.
OnehastraditionallybeencalledAutoselectandisnowreferredtoasDeviceIdentification(ID).
TheothermethodiscalledCommonFlashInterface(CFI).
ForID,acommandisusedtoenableanaddressspaceoverlaywhereupto16wordlocationscanbereadtogetJEDECmanufactureridentification(ID),deviceID,andsomeconfigurationandprotectionstatusinformationfromtheflashmemory.
ThesystemcanusethemanufactureranddeviceIDstoselecttheappropriatedriversoftwaretousewiththeflashdevice.
CFIalsousesacommandtoenableanaddressspaceoverlaywhereanextendabletableofstandardinformationabouthowtheflashmemoryisorganizedandoperatescanberead.
Withthismethodthedriversoftwaredoesnothavetobewrittenwiththespecificsofeachpossiblememorydeviceinmind.
InsteadthedriversoftwareiswritteninamoregeneralwaytohandlemanydifferentdevicesbutadjuststhedriverbehaviorbasedontheinformationintheCFItable.
Traditionallythesetwoaddressspaceshaveusedseparatecommandsandwereseparateoverlays.
However,themappingofthesetwoaddressspacesarenon-overlappingandsocanbecombinedintoasingleaddressspaceandappeartogetherinasingleoverlay.
Eitherofthetraditionalcommandsusedtoaccess(enter)theAutoselect(ID)orCFIoverlaywillcausethenowcombinedID-CFIaddressmaptoappear.
TheID-CFIaddressmapappearsoverlaystheentireFlashArray.
TheID-CFIaddressmapstartsatlocation0oftheselectedsector.
LocationsabovethemaximumdefinedaddressoftheID-CFIASOtothemaximumaddressoftheselectedsectorhaveundefineddata.
TheID-CFIentercommandsusethesameaddressanddatavaluesusedonpreviousgenerationmemoriestoaccesstheJEDECManufacturerID(Autoselect)andCommonFlashInterface(CFI)information,respectively.
ForthecompleteaddressmapseeTable23onpage56.
2.
2.
1DeviceIDTheJointElectronDeviceEngineeringCouncil(JEDEC)standardJEP106TdefinesthemanufacturerIDforacompliantmemory.
CommonindustryusagedefinedamethodandformatforreadingthemanufacturerIDandadevicespecificIDfromamemorydevice.
ThemanufactureranddeviceIDinformationisprimarilyintendedforprogrammingequipmenttoautomaticallymatchadevicewiththecorrespondingprogrammingalgorithm.
Cypresshasaddedadditionalfieldswithinthis32-byteaddressspace.
Theoriginalindustryformatwasstructuredtoworkwithanymemorydatabuswidthe.
g.
x8,x16,x32.
TheIDcodevaluesaretraditionallybytewidebutarelocatedatbuswidthaddressboundariessuchthatincrementingthedeviceaddressinputswillreadsuccessivebyte,word,ordoublewordlocationswiththeIDcodesalwayslocatedintheleastsignificantbytelocationofthedatabus.
Becausethedevicedatabusiswordwideeachcodebyteislocatedinthelowerhalfofeachwordlocation.
Theoriginalindustryformatmadethehighorderbytealways0.
Cypresshasmodifiedtheformattousebothbytesinsomewordsoftheaddressspace.
ForthedetaildescriptionoftheDeviceIDaddressmapseeTable23onpage56.
2.
2.
2CommonFlashMemoryInterfaceTheJEDECCommonFlashInterface(CFI)specification(JESD68.
01)definesastandardizeddatastructurethatmaybereadfromaflashmemorydevice,whichallowsvendor-specifiedsoftwarealgorithmstobeusedforentirefamiliesofdevices.
Thedatastructurecontainsinformationforsystemconfigurationsuchasvariouselectricalandtimingparameters,andspecialfunctionssupportedbythedevice.
Softwaresupportcanthenbedevice-independent,DeviceID-independent,andforward-and-backward-compatibleforentireFlashdevicefamilies.
ThesystemcanreadCFIinformationattheaddresseswithintheselectedsectorasshowninSection7.
2DeviceIDandCommonFlashInterface(ID-CFI)ASOMaponpage56.
LiketheDeviceIDinformation,CFIinformationisstructuredtoworkwithanymemorydatabuswidthe.
g.
x8,x16,x32.
Thecodevaluesarealwaysbytewidebutarelocatedatdatabuswidthaddressboundariessuchthatincrementingthedeviceaddressreadssuccessivebyte,word,ordoublewordlocationswiththecodesalwayslocatedintheleastsignificantbytelocationofthedatabus.
Becausethedatabusiswordwideeachcodebyteislocatedinthelowerhalfofeachwordlocationandthehighorderbyteisalways0.
Forfurtherinformation,refertotheCFISpecification,Version1.
4(orlater),andtheJEDECpublicationsJEP137-AandJESD68.
01.
PleasecontactJEDEC(www.
jedec.
org)fortheirstandardsandtheCFISpecificationmaybefoundatwww.
cypress.
com/cypressap-pnotesatthetimeofthisdocument'spublication,orbycontactingalocalCypresssalesofficelistedonthewebsite.
Table4.
ID-CFIAddressMapOverviewWordAddressByteAddressDescriptionRead/Write(SA)+0000hto000Fh(SA)+0000hto001FhDeviceID(traditionalAutoselectvalues)ReadOnly(SA)+0010hto0079h(SA)+0020hto00F2hCFIdatastructureReadOnly(SA)+0080htoFFFFh(SA)+00F3hto1FFFFhUndefinedReadOnlyDocumentNumber:002-00247Rev.
*LPage9of109S29GL01GT/S29GL512T2.
3StatusRegisterASOTheStatusRegisterASOcontainsasinglewordofregisteredvolatilestatusforEmbeddedAlgorithms.
WhentheStatusRegisterreadcommandisissued,thecurrentstatusiscaptured(bytherisingedgeofWE#)intotheregisterandtheASOisentered.
TheStatusRegistercontentappearsonallwordlocations.
ThefirstreadaccessexitstheStatusRegisterASO(withtherisingedgeofCE#orOE#)andreturnstotheaddressspacemapinusewhentheStatusRegisterreadcommandwasissued.
WritecommandswillnotexittheStatusRegisterASOstate.
2.
4DataPollingStatusASOTheDataPollingStatusASOcontainsasinglewordofvolatilememoryindicatingtheprogressofanEA.
TheDataPollingStatusASOisenteredimmediatelyfollowingthelastwritecycleofanycommandsequencethatinitiatesanEA.
CommandsthatinitiateanEAare:WordProgramProgramBuffertoFlashChipEraseSectorEraseEraseResume/ProgramResumeProgramResumeEnhancedMethodBlankCheckLockRegisterProgramPasswordProgramPPBProgramAllPPBEraseEvaluateEraseStatusTheDataPollingStatuswordappearsatallwordlocationsinthedeviceaddressspace.
WhenanEAiscompletedtheDataPollingStatusASOisexitedandthedeviceaddressspacereturnstotheaddressmapmodewheretheEAwasstarted.
2.
5SecureSiliconRegionASOTheSecureSiliconRegion(SSR)providesanextramemoryareathatcanbeprogrammedonceandpermanentlyprotectedfromfurtherchanges,i.
e.
,itisaOneTimeProgram(OTP)area.
TheSSRis2048bytesinlength.
Itconsistsof512bytesforFactoryLockedSecureSiliconRegion(SSR0),1024bytesforCustomerLockedSecureSiliconRegions(SSR1andSSR2),and512bytesforCustomerLockedSecureSiliconRegionwithReadpassword(SSR3).
SSR0isshippedlocked,preventingfurtherprogramming.
SSR1andSSR2areOTPwitheachhavingseparatelockbitsandoncelockednofurtherprogrammingisallowedforthatregion.
SSR3isanOTPandrequiresaSSR3passwordtoreadorprogramthatregion.
OnceSSR3islockednofurtherprogrammingisallowedforthatregion.
ThesectoraddresssuppliedduringtheSecureSiliconEntrycommandselectstheFlashMemoryArraysectorthatisoverlaidbytheSecureSiliconRegionaddressmap.
TheSSRisoverlaidstartingatlocation0intheselectedsector.
Useofthesector0addressisrecommendedforfuturecompatibility.
WhiletheSSRASOisenteredthecontentofallothersectorsismemorycoredataforreadoperations.
ProgramisnotallowedoutsideofASO.
Table5.
SecureSiliconRegionWordAddressRangeByteAddressRangeContentRegionSize(SA)+0000hto00FFh(SA)+0000hto01FFhFactoryLockedSecureSiliconRegionSSR0512bytes(SA)+0100hto01FFh(SA)+0200hto03FFhCustomerLockedSecureSiliconRegionSSR1512bytes(SA)+0200hto02FFh(SA)+0400hto05FFhCustomerLockedSecureSiliconRegionSSR2512bytes(SA)+0300hto03FFh(SA)+0600hto07FFhCustomerLockedSecureSiliconRegionwithReadPasswordSSR3512bytes(SA)+0400htoFFFFh(SA)+0800hto1FFFFhUndefinedn/a126KBDocumentNumber:002-00247Rev.
*LPage10of109S29GL01GT/S29GL512T2.
6SectorProtectionControl2.
6.
1LockRegisterASOTheLockregisterASOcontainsasinglewordofOTPmemory.
WhentheASOisenteredtheLockRegisterappearsatallwordlocationsinthedeviceaddressspace.
However,itisrecommendedtoreadorprogramtheLockRegisteronlyatlocation0ofthedeviceaddressspaceforfuturecompatibility.
2.
6.
2PersistentProtectionBits(PPB)ASOThePPBASOcontainsonebitofaFlashMemoryArrayforeachSectorinthedevice.
WhenthePPBASOisentered,thePPBbitforasectorappearsintheLeastSignificantBit(LSB)ofeachaddressinthesector.
ReadinganyaddressinasectordisplaysdatawheretheLSBindicatesthenon-volatileprotectionstatusforthatsector.
However,itisrecommendedtoreadorprogramthePPBonlyataddress0ofthesectorforfuturecompatibility.
Ifthebitis0thesectorisprotectedagainstprogramminganderaseoperations.
Ifthebitis1thesectorisnotprotectedbythePPB.
ThesectormaybeprotectedbyotherfeaturesofASP.
2.
6.
3PPBLOCKASOThePPBLockASOcontainsasinglebitofvolatilememory.
ThebitcontrolswhetherthebitsinthePPBASOmaybeprogrammedorerased.
Ifthebitis0thePPBASOisprotectedagainstprogramminganderaseoperations.
Ifthebitis1thePPBASOisnotprotected.
WhenthePPBLockASOisenteredthePPBLockbitappearsintheleastsignificantbit(LSB)ofeachaddressinthedeviceaddressspace.
However,itisrecommendedtoreadorprogramthePPBLockonlyataddress0ofthedeviceforfuturecompatibility.
2.
6.
4PasswordASOThePasswordASOcontainsfourwordsofOTPmemory.
WhentheASOisenteredthePasswordappearsstartingataddress0inthedeviceaddressspace.
Alllocationsabovethefourthwordareundefined.
2.
6.
5DynamicProtectionBits(DYB)ASOTheDYBASOcontainsonebitofavolatilememoryarrayforeachSectorinthedevice.
WhentheDYBASOisentered,theDYBbitforasectorappearsintheleastsignificantbit(LSB)ofeachaddressinthesector.
ReadinganyaddressinasectordisplaysdatawheretheLSBindicatesthenon-volatileprotectionstatusforthatsector.
However,itisrecommendedtoread,set,orcleartheDYBonlyataddress0ofthesectorforfuturecompatibility.
Ifthebitis0thesectorisprotectedagainstprogramminganderaseoperations.
Ifthebitis1thesectorisnotprotectedbytheDYB.
ThesectormaybeprotectedbyotherfeaturesofASP.
DocumentNumber:002-00247Rev.
*LPage11of109S29GL01GT/S29GL512T2.
7ECCStatusASOThesystemcanaccesstheECCStatusASObyissuingtheECCStatusentrycommandsequenceduringReadMode.
TheECCStatusASOprovidestheenabledordisabledstatusoftheECCfunctionoriftheECCfunctioncorrectedasingle-bitErrorwhenreadingtheselectedPage.
Section5.
3AutomaticECConpage21describestheECCfunctioninmoredetail.
TheECCStatusASOallowsthefollowingactivities:ReadECCStatusfortheselectedPage.
ASOExit.
2.
7.
1ECCStatusThecontentsoftheECCStatusASOindicate,fortheselectedECCPage,whethertheECClogichascorrectedanerrorintheECCPageeightbitECCcode,intheECCpageof32-bytesofdata,orthatECCisdisabledforthatECCunit.
TheaddressspecifiedintheECCStatusReadCommand,providedinTable21onpage50andTable22onpage53,selectstheECCPage.
Table6.
ECCStatusWord–UpperByteBit15141312111098NameRFURFURFURFURFURFURFURFUValueXXXXXXXXTable7.
ECCStatusWord–LowerByteBit76543210NameRFURFURFURFUECCEnabledon16-WordPageSingleBitErrorCorrectedECCBitsSingleBitErrorCorrectedDataBitsRFUValueXXXX0=ECCEnabled1=ECCDisabled0=NoErrorCorrected1=SingleBitErrorCorrected0=NoErrorCorrected1=SingleBitErrorCorrectedXDocumentNumber:002-00247Rev.
*LPage12of109S29GL01GT/S29GL512T3.
DataProtectionThedeviceoffersseveralfeaturestopreventmaliciousoraccidentalmodificationofanysectorviahardwaremeans.
3.
1DeviceProtectionMethods3.
1.
1Power-UpWriteInhibitRESET#,CE#,WE#,and,OE#areignoredduringPower-OnReset(POR).
DuringPOR,thedevicecannotbeselected,willnotacceptcommandsontherisingedgeofWE#,anddoesnotdriveoutputs.
TheHostInterfaceController(HIC)andEmbeddedAlgorithmController(EAC)areresettotheirstandbystates,readyforreadingarraydata,duringPOR.
CE#orOE#mustgotoVIHbeforetheendofPOR(tVCS).
AttheendofPORthedeviceconditionsare:allinternalconfigurationinformationisloaded,thedeviceisinreadmode,theStatusRegisterisatdefaultvalue,allbitsintheDYBASOaresettoun-protectallsectors,theWriteBufferisloadedwithall1's,theEACisinthestandbystate.
3.
1.
2LowVCCWriteInhibitWhenVCCislessthanVLKO,theHICdoesnotacceptanywritecyclesandtheEACresets.
ThisprotectsdataduringVCCpower-upandpower-down.
ThesystemmustprovidethepropersignalstothecontrolpinstopreventunintentionalwriteswhenVCCisgreaterthanVLKO.
3.
2CommandProtectionEmbeddedAlgorithmsareinitiatedbywritingcommandsequencesintotheEACcommandmemory.
ThecommandmemoryarrayisnotreadablebythehostsystemandhasnoASO.
Eachhostinterfacewriteisacommandorpartofacommandsequencetothedevice.
TheEACexaminestheaddressanddataineachwritetransfertodetermineifthewriteispartofalegalcommandsequence.
WhenalegalcommandsequenceiscompletetheEACwillinitiatetheappropriateEA.
Writingincorrectaddressordatavalues,orwritingtheminanimpropersequence,willgenerallyresultintheEACreturningtoitsStandbystate.
However,suchanimpropercommandsequencemayplacethedeviceinanunknownstate,inwhichcasethesystemmustwritetheresetcommand,orpossiblyprovideahardwareresetbydrivingtheRESET#signalLOW,toreturntheEACtoitsStandbystate,readyforrandomread.
Theaddressprovidedineachwritemaycontainabitpatternusedtohelpidentifythewriteasacommandtothedevice.
Theupperportionoftheaddressmayalsoselectthesectoraddressonwhichthecommandoperationistobeperformed.
TheSectorAddress(SA)includesAmaxthroughA16flashaddressbits(systembyteaddresssignalsAmaxthroughA16).
AcommandbitpatternislocatedinA10toA0flashaddressbits(systembyteaddresssignalsA11throughA1).
Thedataineachwritemaybe:abitpatternusedtohelpidentifythewriteasacommand,acodethatidentifiesthecommandoperationtobeperformed,orsupplyinformationneededtoperformtheoperation.
SeeTable21onpage50foralistingofallcommandsacceptedbythedevice.
3.
3SecureSiliconRegion(OTP)SeeSection2.
5SecureSiliconRegionASOonpage9foradescriptionofthesecuresiliconregion.
SeeSection5.
4.
9.
3SecureSiliconRegionASOonpage33foradescriptionoftheallowedcommands.
DocumentNumber:002-00247Rev.
*LPage13of109S29GL01GT/S29GL512T3.
4SectorProtectionMethods3.
4.
1WriteProtectSignalIfWP#=VIL,thelowestorhighestaddresssectorisprotectedfromprogramoreraseoperationsindependentofanyotherASPconfiguration.
Whetheritisthelowestorhighestsectordependsonthedeviceorderingoption(model)selected.
IfWP#=VIH,thelowestorhighestaddresssectorisnotprotectedbytheWP#signalbutitmaybeprotectedbyotheraspectsofASPconfiguration.
WP#hasaninternalpull-up;whenunconnected,WP#isatVIH.
WP#shouldnotchangebetweenVILandVIHduringanyembeddedoperation.
3.
4.
2ASPAdvancedSectorProtection(ASP)isasetofindependenthardwareandsoftwaremethodsusedtodisableorenableprogrammingoreraseoperations,individually,inanyorallsectors.
Thissectiondescribesthevariousmethodsofprotectingdatastoredinthememoryarray.
AnoverviewofthesemethodsisshowninFigure2.
Figure2.
AdvancedSectorProtectionOverviewPasswordMethod(DQ2)PersistentMethod(DQ1)LockRegister(OneTimeProgrammable)PPBLockBit1,2,364-bitPassword(OneTimeProtect)1=PPBsUnlocked0=PPBsLockedMemoryArraySector0Sector1Sector2SectorN-2SectorN-1SectorN4PPB0PPB1PPB2PPBN-2PPBN-1PPBNPersistentProtectionBit(PPB)5,6DYB0DYB1DYB2DYBN-2DYBN-1DYBNDynamicProtectionBit(DYB)7,8,97.
0=SectorProtected,1=SectorUnprotected.
8.
ProtecteffectiveonlyifcorrespondingPPBis"1"(unprotected).
9.
VolatileBits:defaultstouserchoiceuponpower-up(seeorderingoptions).
5.
0=SectorProtected,1=SectorUnprotected.
6.
PPBsprogrammedindividually,butclearedcollectively1.
Bitisvolatile,anddefaultsto"1"onreset(to"0"ifinPasswordMode).
2.
Programmingto"0"locksallPPBstotheircurrentstate.
3.
Onceprogrammedto"0",requireshardwareresettounlockorapplicationofthepassword.
4.
N=HighestAddressSector.
DocumentNumber:002-00247Rev.
*LPage14of109S29GL01GT/S29GL512TEverymainflasharraysectorhasanon-volatile(PPB)andavolatile(DYB)protectionbitassociatedwithit.
Wheneitherbitis0,thesectorisprotectedfromprogramanderaseoperations.
ThePPBbitsareprotectedfromprogramanderasewhenthePPBLockbitis0.
TherearetwomethodsformanagingthestateofthePPBLockbit,PersistentProtectionandPasswordProtection.
ThePersistentProtectionmethodsetsthePPBLockto1duringPORorHardwareResetsothatthePPBbitsareunprotectedbyadevicereset.
ThereisacommandtoclearthePPBLockbitto0toprotectthePPBbits.
ThereisnocommandinthePersistentProtectionmethodtosetthePPBLockbitthereforethePPBLockbitwillremainat0untilthenextpower-offorhardwarereset.
ThePersistentProtectionmethodallowsbootcodetheoptionofchangingsectorprotectionbyprogrammingorerasingthePPB,thenprotectingthePPBfromfurtherchangefortheremainderofnormalsystemoperationbyclearingthePPBLockbit.
ThisissometimescalledBoot-codecontrolledsectorprotection.
ThePasswordmethodclearsthePPBLockbitto0duringPORorHardwareResettoprotectthePPB.
A64-bitpasswordmaybepermanentlyprogrammedandhiddenforthepasswordmethod.
Acommandcanbeusedtoprovideapasswordforcomparisonwiththehiddenpassword.
IfthepasswordmatchesthePPBLockbitissetto1tounprotectthePPB.
AcommandcanbeusedtoclearthePPBLockbitto0.
TheselectionofthePPBLockmanagementmethodismadebyprogrammingOTPbitsintheLockRegistersoastopermanentlyselectthemethodused.
TheLockRegisteralsocontainsOTPbits,forprotectingtheSSR.
ThePPBbitsareerasedsothatallmainflasharraysectorsareunprotectedwhenshippedfromCypress.
TheSecuredSiliconRegioncanbefactoryprotectedorleftunprotecteddependingontheorderingoption(model)ordered.
3.
4.
3PPBLockThePersistentProtectionBitLockisavolatilebitforprotectingallPPBbits.
Whenclearedto0,itlocksallPPBsandwhensetto1,itallowsthePPBstobechanged.
ThereisonlyonePPBLockBitperdevice.
ThePPBLockcommandisusedtoclearthebitto0.
ThePPBLockBitmustbeclearedto0onlyafterallthePPBsareconfiguredtothedesiredsettings.
InPersistentProtectionmode,thePPBLockissetto1duringPORorahardwarereset.
Whencleared,nosoftwarecommandsequencecansetthePPBLock,onlyanotherhardwareresetorpower-upcansetthePPBLockbit.
InthePasswordProtectionmode,thePPBLockisclearedto0duringPORorahardwarereset.
ThePPBLockcanonlysetto1bythePasswordUnlockcommandsequence.
ThePPBLockcanbeclearedbythePPBLockBitClearcommand.
3.
4.
4PersistentProtectionBits(PPB)ThePersistentProtectionBits(PPB)arelocatedinaseparatenonvolatileflasharray.
OneofthePPBbitsisassignedtoeachsector.
WhenaPPBis0itsrelatedsectorisprotectedfromprogramanderaseoperations.
ThePPBareprogrammedindividuallybutmustbeerasedasagroup,similartothewayindividualwordsmaybeprogrammedinthemainarraybutanentiresectormustbeerasedatthesametime.
PreprogrammingandverificationpriortoerasurearehandledbytheEAC.
ProgrammingaPPBbitrequiresthetypicalwordprogrammingtime.
DuringaPPBbitprogrammingoperationorPPBbiterasing,DatapollingStatusDQ6ToggleBitIwilltoggleuntiltheoperationiscomplete.
ErasingallthePPBsrequirestypicalsectorerasetime.
IfthePPBLockis0,thePPBProgramorerasecommandsdonotexecuteandtime-outwithoutprogrammingorerasingthePPB.
TheprotectionstateofaPPBforagivensectorcanbeverifiedbyexecutingaPPBStatusReadcommandwhenenteredinthePPBASO.
3.
4.
5DynamicProtectionBits(DYB)DynamicProtectionBitsarevolatileanduniqueforeachsectorandcanbeindividuallymodified.
DYBsonlycontrolprotectionforsectorsthathavetheirPPBserased.
ByissuingtheDYBSetorClearcommandsequences,theDYBaresetto0orclearedto1,thusplacingeachsectorintheprotectedorunprotectedstaterespectively,ifthePPBforthatsectoris1.
Thisfeatureallowssoftwaretoeasilyprotectsectorsagainstinadvertentchanges,yetdoesnotpreventtheeasyremovalofprotectionwhenchangesareneeded.
TheDYBcanbesetto0orclearedto1asoftenasneeded.
DocumentNumber:002-00247Rev.
*LPage15of109S29GL01GT/S29GL512T3.
4.
6SectorProtectionStatesSummaryEachsectorcanbeinoneofthefollowingprotectionstates:Unlocked–Thesectorisunprotectedandprotectioncanbechangedbyasimplecommand.
Theprotectionstatedefaultstounprotectedafterapowercycleorhardwarereset.
DynamicallyLocked–Asectorisprotectedandprotectioncanbechangedbyasimplecommand.
Theprotectionstateisnotsavedacrossapowercycleorhardwarereset.
PersistentlyLocked–AsectorisprotectedandprotectioncanonlybechangedifthePPBLockBitissetto1.
Theprotectionstateisnon-volatileandsavedacrossapowercycleorhardwarereset.
ChangingtheprotectionstaterequiresprogrammingoreraseofthePPBbits.
3.
4.
7LockRegisterTheLockRegisterholdsthenon-volatileOTPbitsforcontrollingprotectionoftheSSRanddeterminingthePPBLockbitmanagementmethod(protectionmode).
TheSecureSiliconRegion(SSR)protectionbitsmustbeusedwithcaution,asoncelocked,thereisnoprocedureavailableforunlockingtheprotectedportionoftheSecureSiliconRegionandnoneofthebitsintheprotectedSecureSiliconRegionmemoryspacecanbemodifiedinanyway.
OncetheSecureSiliconRegionareaisprotected,anyfurtherattemptstoprogramintheareawillfailwithstatusindicatingtheareabeingprogrammedisprotected.
TheRegion0IndicatorBitislocatedintheLockRegisteratbitlocation0,Region1inbitlocation6,Region2inbitlocation9,andRegion3inbitlocation10.
Table8.
SectorProtectionStatesProtectionBitValuesSectorStatePPBLockPPBDYB111Unprotected–PPBandDYBarechangeable110Protected–PPBandDYBarechangeable101Protected–PPBandDYBarechangeable100Protected–PPBandDYBarechangeable011Unprotected–PPBnotchangeable,DYBischangeable010Protected–PPBnotchangeable,DYBischangeable001Protected–PPBnotchangeable,DYBischangeable000Protected–PPBnotchangeable,DYBischangeableTable9.
LockRegisterBitDefaultValueName15-121Reserved111SSRRegion3PasswordProtectionModeLockBit101SSRRegion3(Customer)LockBit91SSRRegion2(Customer)LockBit80Reserved71Reserved61SSRRegion1(Customer)LockBit51Reserved41Reserved31Reserved21PasswordProtectionModeLockBit11PersistentProtectionModeLockBit00SSRRegion0(Factory)LockBitDocumentNumber:002-00247Rev.
*LPage16of109S29GL01GT/S29GL512TAsshippedfromthefactory,alldevicesdefaulttothePersistentProtectionmethod,withallsectorsunprotected,whenpowerisapplied.
Thedeviceprogrammerorhostsystemcanthenchoosewhichsectorprotectionmethodtouse.
Programmingeitherofthefollowingtwo,one-timeprogrammable,non-volatilebits,locksthepartpermanentlyinthatmode:PersistentProtectionModeLockBit(DQ1)PasswordProtectionModeLockBit(DQ2)Ifbothlockbitsareselectedtobeprogrammedatthesametime,theoperationwillabort.
OncethePasswordModeLockBitisprogrammed,thePersistentModeLockBitispermanentlydisabledandnochangestotheprotectionschemeareallowed.
Similarly,ifthePersistentModeLockBitisprogrammed,thePasswordModeispermanentlydisabled.
Ifthepasswordmodeistobechosen,thepasswordmustbeprogrammedpriortosettingthecorrespondinglockregisterbit.
SettingthePasswordProtectionModeLockBit(DQ2)willdisabletheabilitytoprogramorreadthepassword.
TheprogrammingtimeoftheLockRegisteristhesameasthetypicalwordprogrammingtime.
DuringaLockRegisterprogrammingEA,DatapollingStatusDQ6ToggleBitIwilltoggleuntiltheprogramminghascompleted.
ThesystemcanalsodeterminethestatusofthelockregisterprogrammingbyreadingtheStatusRegister.
SeeSection5.
5.
1StatusRegisteronpage37forinformationonthesestatusbits.
TheuserisnotrequiredtoprogramDQ2orDQ1,andDQ6orDQ0bitsatthesametime.
ThisallowstheusertolocktheSSRbeforeorafterchoosingthedeviceprotectionscheme.
WhenprogrammingtheLockBits,theReservedBitsmustbe1(masked).
3.
4.
8PersistentProtectionModeThePersistentProtectionmethodsetsthePPBLockto1duringPORorHardwareResetsothatthePPBbitsareunprotectedbyadevicereset.
ThereisacommandtoclearthePPBLockbitto0toprotectthePPB.
ThereisnocommandinthePersistentProtectionmethodtosetthePPBLockbitto1thereforethePPBLockbitwillremainat0untilthenextpower-offorhardwarereset.
DocumentNumber:002-00247Rev.
*LPage17of109S29GL01GT/S29GL512T3.
4.
9PasswordProtectionMode3.
4.
9.
1PPBPasswordProtectionModePPBPasswordProtectionModeallowsanevenhigherlevelofsecuritythanthePersistentSectorProtectionMode,byrequiringa64-bitpasswordforsettingthePPBLock.
Inadditiontothispasswordrequirement,afterpowerupandreset,thePPBLockisclearedto0toensureprotectionatpower-up.
SuccessfulexecutionofthePasswordUnlockcommandbyenteringtheentirepasswordsetsthePPBLockto1,allowingforsectorPPBmodifications.
PasswordProtectionNotes:ThePasswordProgramCommandisonlycapableofprogramming0's.
Thepasswordisall1'swhenshippedfromCypress.
ItislocatedinitsownmemoryspaceandisaccessiblethroughtheuseofthePasswordProgramandPasswordReadcommands.
All64-bitpasswordcombinationsarevalidasapassword.
OncethePasswordisprogrammedandverified,thePasswordModeLockingBitmustbesetinordertopreventreadingormodificationofthepassword.
ThePasswordModeLockBit,onceprogrammed,preventsreadingthe64-bitpasswordonthedatabusandfurtherpasswordprogramming.
Allfurtherreadcommandstothepasswordregionaredisabled(dataisreadas1's).
ThereisnomeanstoverifywhatthepasswordisafterthePasswordProtectionModeLockBitisprogrammed.
PasswordverificationisonlyallowedbeforeselectingthePasswordProtectionmode.
Anyprogramoperationwillfailandwillreporttheresultsasanormalprogramfailureonalockedsector.
ThePasswordModeLockBitisnoterasable.
Theexactpasswordmustbeenteredinorderfortheunlockingfunctiontooccur.
Theaddressescanbeloadedinanyorderbutall4wordsarerequiredforasuccessfulmatchtooccur.
TheSectorAddresses(Amax–A16)andWordLineAddresses(A15–A8)arecomparedto'zero'whilethepasswordaddress/dataareloaded.
IftheSectorAddressorWordLineAddressdon'tmatchthentheerrorwillbereportedattheendofthatwritecycle.
ThestatusregisterwillreturntothereadystatewiththeProgramStatusBitsetto1andWriteBufferAbortStatusBitsetto1indicatingafailedprogrammingoperation.
Thedatapollingstatuswillremainactive,withDQ7settothecomplementoftheDQ7bitinthelastwordofthepasswordunlockcommand,andDQ6toggling.
RY/BY#willremainLOW.
ThespecificaddressanddataarecomparedaftertheProgramBufferToFlashcommandhasbeengiven.
Iftheydon'tmatchtotheinternalsetvaluethanthestatusregisterwillreturntothereadystatewiththeProgramStatusBitsetto1indicatingafailedprogrammingoperation.
Thedatapollingstatuswillremainactive,withDQ7settothecomplementoftheDQ7bitinthelastwordofthepasswordunlockcommand,andDQ6toggling.
RY/BY#willremainLOW.
Inthiserrorcaseduetoincorrectpassword,thedevicerequiresawaittimeoftPPBandasoftwareresetcommandtocleartheerrorpriortothePasswordASOExitcommandtoproperlyexitthePasswordASO.
FailuretodosowillcausethedevicetoremaininthePasswordASO.
ThedevicerequirestPPBforsettingthePPBLockafterthevalid64-bitpasswordisgiventothedevice.
Thismakesittakeanunreasonablylongtime(58millionyears)forahackertorunthroughallthe64-bitcombinationsinanattempttocorrectlymatchapassword.
TheEAstatuscheckingmethodsmaybeusedtodeterminewhentheEACisreadytoacceptanewpasswordcommand.
IfthepasswordislostaftersettingthePasswordModeLockBit,thereisnowaytoclearthePPBLock.
DocumentNumber:002-00247Rev.
*LPage18of109S29GL01GT/S29GL512T4.
ReadOperations4.
1AsynchronousReadEachreadaccessmaybemadetoanylocationinthememory(randomaccess).
Eachrandomaccessisself-timedwiththesamelatencyfromCE#oraddresstovaliddata(tACCortCE).
4.
2PageModeReadEachrandomreadaccessesanentire32-bytePageinparallel.
SubsequentreadswithinthesamePagehavefasterreadaccessspeed.
ThePageisselectedbythehigheraddressbits(Amax-A4),whilethespecificwordofthatPageisselectedbytheleastsignificantaddressbitsA3-A0(A3-A-1inx8mode).
ThehigheraddressbitsarekeptconstantandonlyA3-A0(A3-A-1inx8mode)changedtoselectadifferentwordinthesamePage.
ThisisanasynchronousaccesswithdataappearingonDQ15-DQ0(DQ7-DQ0inx8mode)whenCE#remainsLOW,OE#remainsLOW,andtheasynchronousPageaccesstime(tPACC)issatisfied.
IfCE#goesHIGHandreturnsLOWforasubsequentaccess,arandomreadaccessisperformedandtimeisrequired(tACCortCE).
DocumentNumber:002-00247Rev.
*LPage19of109S29GL01GT/S29GL512T5.
EmbeddedOperations5.
1EmbeddedAlgorithmController(EAC)TheEACtakescommandsfromthehostsystemforprogramminganderasingtheflashmemoryarrayandperformsallthecomplexoperationsneededtochangethenon-volatilememorystate.
Thisfreesthehostsystemfromanyneedtomanagetheprogramanderaseprocesses.
TherearefourEACoperationcategories:Standby(ReadMode)AddressSpaceSwitchingEmbeddedAlgorithms(EA)AdvancedSectorProtection(ASP)Management5.
1.
1EACStandbyInthestandbymodecurrentconsumptionisgreatlyreduced.
TheEACentersitsstandbymodewhennocommandisbeingprocessedandnoEmbeddedAlgorithmisinprogress.
Ifthedeviceisdeselected(CE#=HIGH)duringanEmbeddedAlgorithm,thedevicestilldrawsactivecurrentuntiltheoperationiscompleted(ICC3).
ICC4inSection10.
5DCCharacteristicsonpage70representsthestandbycurrentspecificationwhenboththeHostInterfaceandEACareintheirStandbystate.
5.
1.
2AddressSpaceSwitchingWritingspecificaddressanddatasequences(commandsequences)switchthememorydeviceaddressspacefromthemainflasharraytooneoftheAddressSpaceOverlays(ASO).
EmbeddedAlgorithmsoperateontheinformationvisibleinthecurrentlyactive(entered)ASO.
ThesystemcontinuestohaveaccesstotheASOuntilthesystemissuesanASOExitcommand,performsaHardwareRESET,oruntilpowerisremovedfromthedevice.
AnASOExitCommandswitchesfromanASObacktothemainflasharrayaddressspace.
ThecommandsacceptedwhenaparticularASOisenteredarelistedbetweentheASOenterandexitcommandsinthecommanddefinitionstable.
SeeSection7.
1CommandSummaryonpage50foraddressanddatarequirementsforallcommandsequences.
5.
1.
3EmbeddedAlgorithms(EA)Changingthenon-volatiledatainthememoryarrayrequiresacomplexsequenceofoperationsthatarecalledEmbeddedAlgorithms(EA).
ThealgorithmsaremanagedentirelybythedeviceinternalEmbeddedAlgorithmController(EAC).
ThemainalgorithmsperformprogramminganderasingofthemainarraydataandtheASO's.
Thehostsystemwritescommandcodestotheflashdeviceaddressspace.
TheEACreceivesthecommands,performsallthenecessarystepstocompletethecommand,andprovidesstatusinformationduringtheprogressofanEA.
DocumentNumber:002-00247Rev.
*LPage20of109S29GL01GT/S29GL512T5.
2ProgramandEraseSummaryFlashdatabitsareerasedinparallelinalargegroupcalledasector.
TheEraseoperationplaceseachdatabitinthesectorinthelogical1state(HIGH).
Flashdatabitsmaybeindividuallyprogrammedfromtheerased1statetotheprogrammedlogical0(LOW)state.
Adatabitof0cannotbeprogrammedbacktoa1.
Asucceedingreadshowsthatthedataisstill0.
Onlyeraseoperationscanconverta0toa1.
Programmingthesamewordlocationmorethanoncewithdifferent0bitswillresultinthelogicalANDofthepreviousdataandthenewdatabeingprogrammed.
ThedurationofprogramanderaseoperationsisshowninSection5.
7EmbeddedAlgorithmPerformanceTableonpage46.
Programanderaseoperationsmaybesuspended.
Aneraseoperationmaybesuspendedtoalloweitherprogrammingorreadingofanothersector(notintheerasesector).
Noothereraseoperationcanbestartedduringanerasesuspend.
Aprogramoperationmaybesuspendedtoallowreadingofanotherlocation(notintheLinebeingprogrammed).
Nootherprogramoreraseoperationmaybestartedduringasuspendedprogramoperation–programorerasecommandswillbeignoredduringasuspendedprogramoperation.
Afteraninterveningprogramoperationorreadaccessiscompletethesuspendederaseorprogramoperationmayberesumed.
Theresumecanhappenatanytimeafterthesuspend,assumingthedeviceisnotintheprocessofexecutinganothercommand.
ProgramandEraseoperationsmaybeinterruptedasoftenasnecessarybutinorderforaprogramoreraseoperationtoprogresstocompletiontheremustbesomeperiodsoftimebetweenresumeandthenextsuspendcommandsgreaterthanorequaltotPRSortERSinSection5.
7EmbeddedAlgorithmPerformanceTableonpage46.
WhenanEmbeddedAlgorithm(EA)iscomplete,theEACreturnstotheoperationstateandaddressspacefromwhichtheEAwasstarted(EraseSuspend,EACStandby,.
.
.
).
ThesystemcandeterminethestatusofaprogramoreraseoperationbyreadingtheStatusRegisterorusingDataPollingStatus.
RefertoSection5.
5.
1StatusRegisteronpage37forinformationonthesestatusbits.
RefertoSection5.
5.
2DataPollingStatusonpage38formoreinformation.
AnycommandswrittentothedeviceduringtheEmbeddedProgramAlgorithmareignoredexcepttheProgramSuspend(x51h),StatusReadcommand(x70h),andEraseSuspend/ProgramSuspendcommand(xB0h).
AnycommandswrittentothedeviceduringtheEmbeddedEraseAlgorithmareignoredexceptStatusRead(x70h)andEraseSuspend/ProgramSuspendcommand(xB0h).
Ahardwareresetimmediatelyterminatesanyinprogressprogram/eraseoperationandreturnstoreadmodeaftertRPHtime.
Theterminatedoperationshouldbereinitiatedoncethedevicehasreturnedtotheidlestate,toensuredataintegrity.
Forperformanceandreliabilityreasonsreadingandprogrammingisinternallydoneonfull32-bytePages.
ICC3inSection10.
5DCCharacteristicsonpage70representstheactivecurrentspecificationforawrite(EmbeddedAlgorithm)operation.
5.
2.
1ProgramGranularityTheS29GL-Tsupportstwomethodsofprogramming,WordorWriteBufferProgramming.
EachPagecanbeprogrammedbyeithermethod.
PagesprogrammedbydifferentmethodsmaybemixedwithinaLinefortheIndustrialTemperatureversion(-40°Cto+85°C).
FortheIndustrialPlusversion(-40°Cto+105°C)andExtendedversion(-40°Cto+125°C)thedevicewillonlysupportoneprogrammingoperationoneach32-bytepagebetweeneraseoperationsandSingleWordProgrammingcommandisnotsupported.
Wordprogrammingexaminesthedatawordsuppliedbythecommandandprograms0'sintheaddressedmemoryarraywordtomatchthe0'sinthecommanddataword.
WriteBufferProgrammingexaminesthewritebufferandprograms0'sintheaddressedmemoryarrayPagestomatchthe0'sinthewritebuffer.
Thewritebufferdoesnotneedtobecompletelyfilledwithdata.
Itisallowedtoprogramaslittleasasinglebit,severalbits,asingleword,afewwords,aPage,multiplePages,ortheentirebufferasoneprogrammingoperation.
UseofthewritebuffermethodreduceshostsystemoverheadinwritingprogramcommandsandreducesmemorydeviceinternaloverheadinprogrammingoperationstomakeWriteBufferProgrammingmoreefficientandthusfasterthanprogrammingindividualwordswiththeWordProgrammingcommand.
5.
2.
2IncrementalProgrammingThesamewordlocationmaybeprogrammedmorethanonce,byeithertheWordorWriteBufferProgrammingmethods,toincre-mentallychange1'sto0's.
NotethatmorethanoneprogrammingoperationonthesamePagewilldisableECCforthatPage.
DocumentNumber:002-00247Rev.
*LPage21of109S29GL01GT/S29GL512T5.
3AutomaticECC5.
3.
1ECCOverviewTheAutomaticECCfeatureworkstransparentlywithnormalprogram,erase,andreadoperations.
AsthedevicetransferseachPageofdatafromtheWriteBuffertothememoryarray,internalECClogicprogramsECCCodeforthePageintoaportionofthememoryarraythatisnotvisibletothehostsystem.
ThedeviceevaluatesthePagedataandtheECCCodeduringeachinitialPageaccess.
Ifneeded,theinternalECClogicwillcorrectaonebiterrorduringtheinitialaccess.
ProgrammingmorethanoncetoaparticularPagewilldisabletheECCfunctionforthatPage.
TheECCfunctionwillremaindisabledforthatPageuntilthenexttimethehostsystemerasestheSectorcontainingthatPage.
ThehostsystemmayreaddatastoredinthatPagefollowingmultipleprogrammingoperations;however,ECCisdisabledandanerrorinthatPagewillnotbedetectedorcorrected.
5.
3.
2ProgramandEraseSummaryForperformanceandreliabilityreasons,readingandprogrammingoperationsareperformedonfull32-bytePagesinparallel.
ThedeviceprovidesECConeachPagebyaddinganECCCodetoeachPagewhenfirstprogrammed.
TheECCCodeisautomaticandtransparenttothehostsystem.
5.
3.
3ECCImplementationEach32-bytePageinthemainflasharray,aswellaseach32-byteOTPregion,featuresanassociatedECCCode.
InternalECClogicisabletodetectandcorrectanysinglebiterrorfoundinaPage,ortheassociatedECCCode,duringareadaccess.
ThefirstWriteBufferprogramoperationappliedtoaPageprogramstheECCCodeforthatPage.
Subsequentprogrammingopera-tions,thatoccurmorethanonce,onaparticularPagedisabletheECCfunctionforthatPage.
Thisallowsbitorwordprogramming;however,notethatmultipleprogrammingoperationstothesamePagewilldisabletheECCfunctiononthePagewhereincrementalprogrammingoccurs.
AneraseoftheSectorcontainingaPagewithECCdisabledwillre-enabletheECCfunctionforthatPage.
TheECCfunctionisautomaticandtransparenttotheuser.
ThetransparencyoftheAutomaticECCfunctionenhancesdataintegrityfortypicalprogrammingoperationsthatwritedataoncetoeachPage.
TheECCfunctionalsofacilitatessoftwarecompatibilitytopreviousgenerationsofGLFamilyproductsbyallowingsinglewordprogrammingandbitwalkingwherethesamePageorwordisprogrammedmorethanonce.
WhenaPagehasAutomaticECCdisabled,theECCfunctionwillnotdetectorcorrectanerroronadatareadfromthatPage.
5.
3.
4WordProgrammingWordprogrammingprogramsasinglewordanywhereinthemainFlashMemoryArray.
Programmingmultiplewordsinthesame32-bytePagedisablesAutomaticECCprotectiononthatPage.
AsectoreraseofthesectorcontainingthatPagewillre-enableAutomaticECCfollowingmultiplewordprogrammingoperationsonthatPage.
5.
3.
5WriteBufferProgrammingEachWriteBufferProgramoperationallowsforprogrammingof1bitupto512bytes.
A32-bytePageisthesmallestprogramgranularitythatfeaturesAutomaticECCprotection.
ProgrammingthesamePagemorethanoncewilldisabletheAutomaticECCfunctiononthatPage.
CypressrecommendsthataWriteBufferprogrammingoperationprogrammultiplePagesinanoperationandwriteeachPageonlyonce.
ThiskeepstheAutomaticECCprotectionenabledoneachPage.
Fortheverybestperformance,programinfullLinesof512bytesalignedon512-byteboundaries.
DocumentNumber:002-00247Rev.
*LPage22of109S29GL01GT/S29GL512T5.
4CommandSet5.
4.
1ProgramMethods5.
4.
1.
1WordProgrammingWordprogrammingisusedtoprogramasinglewordanywhereinthemainFlashMemoryArray.
TheWordProgrammingcommandisafour-write-cyclesequence.
Theprogramcommandsequenceisinitiatedbywritingtwounlockwritecycles,followedbytheprogramsetupcommand.
Theprogramaddressanddataarewrittennext,whichinturninitiatetheEmbeddedWordProgramalgorithm.
Thesystemisnotrequiredtoprovidefurthercontrolsortiming.
Thedeviceautomaticallygeneratestheprogrampulsesandverifiestheprogrammedcellmargininternally.
WhentheEmbeddedWordProgramalgorithmiscomplete,theEACthenreturnstoitsstandbymode.
ThesystemcandeterminethestatusoftheprogramoperationbyusingDataPollingStatus,readingtheStatusRegister,ormonitoringtheRY/BY#output.
SeeSection5.
5.
1StatusRegisteronpage37forinformationonthesestatusbits.
SeeSection5.
5.
2DataPollingStatusonpage38forinformationonthesestatusbits.
SeeFigure3onpage22foradiagramofthewordprogrammingoperation.
AnycommandsotherthanProgramSuspendwrittentothedeviceduringtheEmbeddedProgramalgorithmareignored.
Notethatahardwarereset(RESET#=VIL)immediatelyterminatestheprogrammingoperationandreturnsthedevicetoreadmodeaftertRPHtime.
Toensuredataintegrity,theProgramcommandsequenceshouldbereinitiatedoncethedevicehascompletedthehardwareresetoperation.
AmodifiedversionoftheWordProgrammingcommand,withoutunlockwritecycles,isusedforprogrammingwhenenteredintotheLockRegister,Password,andPPBASOsortheUnlockBypassmode.
ThesamecommandisusedtochangevolatilebitswhenenteredintothePPBLock,andDYBASOs.
SeeTable21onpage50forprogramcommandsequences.
Figure3.
WordProgramOperationSTARTWriteProgramCommandSequenceDataPollfromSystemVerifyWordLastAddresssIncrementAddressEmbeddedProgramalgorithminprogressProgrammingCompletedNoNoYesYesDocumentNumber:002-00247Rev.
*LPage23of109S29GL01GT/S29GL512T5.
4.
1.
2WriteBufferProgrammingAwritebufferisusedtoprogramdatawithina512-byteaddressrangealignedona512-byteboundary(Line).
Thus,afullWriteBufferProgrammingoperationmustbealignedonaLineboundary.
Programmingoperationsoflessthanafull512bytesmaystartonanywordboundarybutmaynotcrossaLineboundary.
AtthestartofaWriteBufferprogrammingoperationallbitlocationsinthebufferareall1's(FFFFhwords)thusanylocationsnotloadedwillretaintheexistingdata.
SeeSection1.
ProductOverviewonpage4forinformationonaddressmap.
WriteBufferProgrammingallowsupto512bytestobeprogrammedinoneoperation.
Itispossibletoprogramfrom1bitupto512bytesineachWriteBufferProgrammingoperation.
ItisrecommendedthatamultipleofPagesbewrittenandeachPagewrittenonlyonce.
Fortheverybestperformance,programmingshouldbedoneinfullLinesof512bytesalignedon512-byteboundaries.
WriteBufferProgrammingissupportedonlyinthemainflasharrayortheSSRASO.
TheWriteBufferProgrammingoperationisinitiatedbyfirstwritingtwounlockcycles.
ThisisfollowedbyathirdwritecycleoftheWritetoBuffercommandwiththeSectorAddress(SA),inwhichprogrammingistooccur.
Next,thesystemwritesthenumberofwordlocationsminus1.
ThistellsthedevicehowmanywritebufferaddressesareloadedwithdataandthereforewhentoexpecttheProgramBuffertoflashconfirmcommand.
TheSectorAddressmustmatchintheWritetoBuffercommandandtheWriteWordCountcommand.
TheSectortobeprogrammedmustbeunlocked(unprotected).
Thesystemthenwritesthestartingaddress/datacombination.
Thisstartingaddressisthefirstaddress/datapairtobeprogrammed,andselectsthewrite-buffer-Lineaddress.
TheSectoraddressmustmatchtheWritetoBufferSectorAddressortheoperationwillabortandgoestotheAbortstate.
Allsubsequentaddress/datapairsmustbeinsequentialorder.
AllwritebufferaddressesmustbewithinthesameLine.
Ifthesystemattemptstoloaddataoutsidethisrange,theoperationwillabortandgototheAbortstate.
Thecounterdecrementsforeachdataloadoperation.
Notethatwhilecountingdownthedatawrites,everywriteisconsideredtobedatabeingloadedintothewritebuffer.
Nocommandsarepossibleduringthewritebufferloadingperiod.
TheonlywaytostoploadingthewritebufferistowritewithanaddressthatisoutsidetheLineoftheprogrammingoperation.
ThisinvalidaddresswillimmediatelyaborttheWritetoBuffercommand.
Oncethespecifiednumberofwritebufferlocationshasbeenloaded,thesystemmustthenwritetheProgramBuffertoFlashcommandattheSectorAddress.
Thedevicethengoesbusy.
TheEmbeddedProgramalgorithmautomaticallyprogramsandverifiesthedataforthecorrectdatapattern.
Thesystemisnotrequiredtoprovideanycontrolsortimingsduringtheseoperations.
IfanincorrectnumberofwritebufferlocationshavebeenloadedtheoperationwillabortandgoestotheAbortstate.
TheabortoccurswhenanythingotherthantheProgramBuffertoFlashiswrittenwhenthatcommandisexpectedattheendofthewordcount.
Thewrite-bufferembeddedprogrammingoperationcanbesuspendedusingtheProgramSuspendcommand.
WhentheEmbeddedProgramalgorithmiscomplete,theEACthenreturnstotheEACstandbyorEraseSuspendstandbystatewheretheprogrammingoperationwasstarted.
ThesystemcandeterminethestatusoftheprogramoperationbyusingDataPollingStatus,readingtheStatusRegister,ormonitoringtheRY/BY#output.
SeeSection5.
5.
1StatusRegisteronpage37forinformationonthesestatusbits.
SeeSection5.
5.
2DataPollingStatusonpage38forinformationonthesestatusbits.
SeeFigure4onpage24foradiagramoftheprogrammingoperation.
TheWriteBufferProgrammingSequencewillbeabortedunderthefollowingconditions:LoadaWordCountvaluegreaterthanthebuffersize(255).
WriteanaddressthatisoutsidetheLineprovidedintheWritetoBuffercommand.
TheProgramBuffertoFlashcommandisnotissuedaftertheWriteWordCountnumberofdatawordsisloaded.
Whenanyoftheconditionsthatcauseanabortofwritebuffercommandoccurtheabortwillhappenimmediatelyaftertheoffendingcondition,andwillindicateaProgramFailintheStatusRegisteratbitlocation4(PSB=1)duetoWriteBufferAbortbitlocation3(WBASB=1).
ThenextsuccessfulprogramoperationwillclearthefailurestatusoraClearStatusRegistermaybeissuedtoclearthePSBstatusbit.
TheWriteBufferProgrammingSequencecanbestoppedbythefollowing:HardwareResetorPowercycle.
However,theseusingeitherofthesemethodsmayleavetheareabeingprogrammedinanintermediatestatewithinvalidorunstabledatavalues.
Inthiscasethesameareawillneedtobereprogrammedwiththesamedataorerasedtoensuredatavaluesareproperlyprogrammedorerased.
DocumentNumber:002-00247Rev.
*LPage24of109S29GL01GT/S29GL512TFigure4.
WriteBufferProgrammingOperationwithDataPollingStatusWrite"WritetoBuffer"commandSectorAddressWrite"WordCount"toprogram-1(WC)SectorAddressWriteStartingAddress/DataWC=0ABORTWritetoBufferOperationWritetoadifferentSectorAddressWritetoBufferABORTED.
Mustwrite"Write-to-BufferABORTRESET"commandsequencetoreturntoREADmode.
WritenextAddress/DatapairWC=WC-1WriteProgramBuffertoFlashConfirm,SectorAddressReadDQ7-DQ0withAddr=LASTLOADEDADDRESSDQ7=DataDQ5=1DQ1=1ReadDQ7-DQ0withAddr=LASTLOADEDADDRESSDQ7=DataFAILorABORT(Note2)PASSNoYes(Note4)NoNoNoNoNoYesYesYesYesYes[Note3][Note5]Notes2.
DQ7shouldberecheckedevenifDQ5=1becauseDQ7maychangesimultaneouslywithDQ5.
3.
IfthisflowchartlocationwasreachedbecauseDQ5=1,thenthedeviceFAILED.
IfthisflowchartlocationwasreachedbecauseDQ1=1,thentheWriteBufferoperationwasABORTED.
IneithercasetheproperRESETcommandmustbewrittentothedevicetoreturnthedevicetoREADmode.
Write-Buffer-Program-ming-Abort-RestifDQ1=1,eitherSoftwareRESETorWrite-Buffer-Programming-Abort-ResetifDQ5=1.
4.
SeeTable21onpage50forthecommandsequenceasrequiredforWriteBufferProgramming.
5.
WhenSectorAddressisspecified,anyaddressintheselectedsectorisacceptable.
However,whenloadingWrite-Bufferaddresslocationswithdata,alladdressesMUSTfallwithintheselectedWrite-BufferPage.
DocumentNumber:002-00247Rev.
*LPage25of109S29GL01GT/S29GL512TFigure5.
WriteBufferProgrammingOperationwithStatusRegisterWrite"WritetoBuffer"commandSectorAddressWrite"WordCount"toprogram-1(WC)SectorAddressWriteStartingAddress/DataWC=0ABORTWritetoBufferOperationWritetoadifferentSectorAddressWritetoBufferABORTED.
Mustwrite"Write-to-BufferABORTRESET"commandsequencetoreturntoREADmode.
WritenextAddress/DatapairWC=WC-1WriteProgramBuffertoFlashConfirm,SectorAddressReadStatusRegisterDRBSR[7]=0WBASBSR[3]=1PSBSR[4]=0ProgramFailProgramSuccessfulNoYes(Note2)NoNoNoYesYesYesNoYesProgramabortedduringWritetoBuffercommandSLSBSR[1]=0NoYesSectorLockedErrorProgramFail[Note7]Notes6.
SeeTable21onpage50forthecommandsequenceasrequiredforWriteBufferProgramming.
7.
WhenSectorAddressisspecified,anyaddressintheselectedsectorisacceptable.
However,whenloadingWrite-Bufferaddresslocationswithdata,alladdressesMUSTfallwithintheselectedWrite-BufferPage.
DocumentNumber:002-00247Rev.
*LPage26of109S29GL01GT/S29GL512TLegend:SA=SectorAddress(Non-SectorAddressbitsaredon'tcare.
AnyaddresswithintheSectorissufficient.
)WBL=WriteBufferLocation(MUSTbewithintheboundariesoftheWrite-Buffer-LinespecifiedbytheStartingAddress.
)WC=WordCountPD=ProgramData5.
4.
2ProgramSuspend/ProgramResumeCommandsTheProgramSuspendcommandallowsthesystemtointerruptanembeddedprogrammingoperationsothatdatacanreadfromanynon-suspendedLine.
WhentheProgramSuspendcommandiswrittenduringaprogrammingprocess,thedevicehaltstheprogrammingoperationwithintPSL(programsuspendlatency)andupdatesthestatusbits.
Addressesaredon't-careswhenwritingtheProgramSuspendcommand.
Therearetwocommandsavailableforprogramsuspend.
ThelegacycombinedErase/Programsuspendcommand(B0hcommandcode)andtheseparateProgramSuspendcommand(51hcommandcode).
TherearealsotwocommandsforProgramresume.
ThelegacycombinedErase/Programresumecommand(30hcommandcode)andtheseparateProgramResumecommand(50hcommandcode).
Itisrecommendedtousetheseparateprogramsuspendandresumecommandsforprogrammingandusethelegacycombinedcommandonlyforerasesuspendandresume.
Aftertheprogrammingoperationhasbeensuspended,thesystemcanreadarraydatafromanynon-suspendedLine.
TheProgramSuspendcommandmayalsobeissuedduringaprogrammingoperationwhileaneraseissuspended.
Inthiscase,datamaybereadfromanyaddressesnotinEraseSuspendorProgramSuspend.
AftertheProgramResumecommandiswritten,thedevicerevertstoprogrammingandthestatusbitsareupdated.
ThesystemcandeterminethestatusoftheprogramoperationbyreadingtheStatusRegisterorusingDataPolling.
RefertoSection5.
5.
1StatusRegisteronpage37forinformationonthesestatusbits.
RefertoSection5.
5.
2DataPollingStatusonpage38formoreinformation.
AccessesandcommandsthatarevalidduringProgramSuspendare:Readtoanyothernon-erase-suspendedsectorReadtoanyothernon-program-suspendedLineStatusReadcommandStatusRegisterClearExitASOorCommandSetExitProgramResumecommandTable10.
WriteBufferProgrammingCommandSequenceSequencex16x8CommentAddressDataAddressDataIssueUnlockCommand1555AAAAAAAIssueUnlockCommand22AA5555555IssueWritetoBufferCommandatSectorAddressSA0025hSA25hIssueNumberofLocationsatSectorAddressExample:WCof0=1wordtopgmWCof1=2wordstopgmSAWCSAWCWC=numberofwordstoprogram–1(inx8modeWC=numberofbytestoprogram–1)LoadStartingAddress/DatapairStartingAddressPDStartingAddressPDSelectsWrite-Buffer-PageandloadsfirstAddress/DataPair.
LoadnextAddress/DatapairWBLPDWBLPDAlladdressesMUSTbewithintheselectedwrite-buffer-pageboundaries,andhavetobeloadedinsequentialorder.
LoadLASTAddress/DatapairWBLPDWBLPDAlladdressesMUSTbewithintheselectedwrite-buffer-pageboundaries,andhavetobeloadedinsequentialorder.
IssueWriteBufferProgramConfirmatSectorAddressSA0029hSA29hThiscommandMUSTfollowthelastwritebufferlocationloaded,ortheoperationwillABORT.
Devicegoesbusy.
DocumentNumber:002-00247Rev.
*LPage27of109S29GL01GT/S29GL512TThesystemmustwritetheProgramResumecommandtoexittheProgramSuspendmodeandcontinuetheprogrammingoperation.
FurtherwritesoftheProgramResumecommandareignored.
AnotherProgramSuspendcommandcanbewrittenafterthedevicehasresumedprogramming.
ProgramoperationscanbeinterruptedasoftenasnecessarybutinorderforaprogramoperationtoprogresstocompletiontheremustbesomeperiodsoftimebetweenresumeandthenextsuspendcommandgreaterthanorequaltotPRSinSection5.
1EmbeddedAlgorithmController(EAC)onpage19.
ProgramsuspendandresumeisnotsupportedwhileenteredinanASO.
5.
4.
3AcceleratedProgrammingThedevicesupportsprogramoperationswhenthesystemassertsVHHontheWP#/ACCorACCpin.
WhenWP#/ACCorACCpinisloweredbacktoVIHorVILthedeviceexitstheAcceleratedProgrammingmodeandreturnstonormaloperation.
TheWP#/ACCisVHHtolerantbutisnotdesignedtoacceleratetheprogramfunctions.
IfthesystemassertsVHHonthisinput,thedeviceautomaticallyenterstheUnlockBypassmode.
ThesystemcanthenusetheWriteBufferLoadcommandsequenceprovidedbytheUnlockBypassmode.
Notethatifa'Write-to-Buffer-AbortReset'isrequiredwhileinUnlockBypassmode,thefull3-cycleRESETcommandsequencemustbeusedtoresetthedevice.
RemovingVHHfromtheACCinput,uponcompletionoftheembeddedprogramoperation,returnsthedevicetonormaloperation.
NotethattheWP#/ACCpinmustnotbeatVHHforoperationsotherthanacceleratedprogramming,ordevicedamagemayresult.
WP#containsaninternalpull-up;whenunconnected,WP#isatVIH.
Acceleratedprogrammingissupportedatroomtemperatureonly.
SectorsmustbeunlockedpriortoraisingWP#/ACCtoVHH.
ItisrecommendedthatWP#/ACCapplyVHHafterpower-upsequenceiscompleted.
Inaddition,itisrecommendedthatWP#/ACCapplyfromVHHtoVIH/VILbeforepoweringdownVCC/VIO.
5.
4.
4UnlockBypassThisdevicefeaturesanUnlockBypassmodetofacilitateshorterprogrammingcommands.
OncethedeviceenterstheUnlockBypassmode,onlytwowritecyclesarerequiredtoprogramdata,insteadofthenormalfourcycles.
ThedevicewillalsosupporttheWritetoBuffercommandandwillonlyrequirefour+writecycles.
Thismodedispenseswiththeinitialtwounlockcyclesrequiredinthestandardprogramcommandsequence,resultinginfastertotalprogrammingtime.
TheSection7.
1CommandSummaryonpage50showstherequirementsfortheunlockbypasscommandsequences.
Duringtheunlockbypassmode,onlytheRead,Program,WriteBufferProgramming,Write-to-Buffer-AbortReset,StatusRegisterRead,StatusRegisterClear,SoftReset,UnlockBypassSectorErase,UnlockBypassChipErase,UnlockEraseSuspend/Resume,UnlockBypassSuspend/Resume,andUnlockBypassResetcommandsarevalid.
Toexittheunlockbypassmode,thesystemmustissuethetwo-cycleunlockbypassresetcommandsequence.
Thefirstcycleaddressis'don'tcare'andthedata90h.
Thesecondcycleneedonlycontainthedata00h.
Thesectorthenreturnstothereadmode.
SoftwareFunctionsandSampleCodeThefollowingareCsourcecodeexamplesofusingtheunlockbypassentry,program,andexitfunctions.
RefertotheCypressLowLevelDriverUser'sGuideforgeneralinformationonCypressflashmemorysoftwaredevelopmentguidelines.
Table11.
UnlockBypassEntry(LLDFunction=lld_UnlockBypassEntryCmd)CycleDescriptionOperationByteAddressWordAdddressData1UnlockWriteBase+AAAhBase+555h00AAh2UnlockWriteBase+555hBase+2AAh0055h3EntryCommandWriteBase+AAAhBase+555h0020hDocumentNumber:002-00247Rev.
*LPage28of109S29GL01GT/S29GL512T/*Example:UnlockBypassEntryCommand*/*((UINT16*)base_addr+0x555)=0x00AA;/*writeunlockcycle1*/*((UINT16*)base_addr+0x2AA)=0x0055;/*writeunlockcycle2*/*((UINT16*)base_addr+0x555)=0x0020;/*writeunlockbypasscommand*//*Atthispoint,programmingonlytakestwowritecycles.
*//*OnceyouenterUnlockBypassMode,doaseriesoflike*//*operations(programmingorsectorerase)andthenexit*//*UnlockBypassModebeforebeginningadifferenttypeof*//*operations.
*//*Example:UnlockBypassProgramCommand*//*DowhileinUnlockBypassEntryMode!
*/*((UINT16*)base_addr)=0x00A0;/*writeprogramsetupcommand*/*((UINT16*)pa)=data;/*writedatatobeprogrammed*//*Polluntildoneorerror.
*//*Ifdoneandmoretoprogram,*//*doabovetwocyclesagain.
*//*Example:UnlockBypassExitCommand*/*((UINT16*)base_addr)=0x0090;*((UINT16*)base_addr)=0x0000;5.
4.
5EvaluateEraseStatusTheEvaluateEraseStatus(EES)commandverifiesthatthelasteraseoperationontheaddressedsectorwascompletedsuccessfully(i.
e.
"TrustWorthy").
TheEEScommandcanbeusedtodetecteraseoperationsfailedduetolossofpower,reset,orfailureduringtheeraseoperation.
ToinitiateaEESonaSector,write35htoaddress555hintheSector,whiletheEACisinthestandbystate.
TheEEScommandmaynotbewrittenwhilethedeviceisactivelyprogrammingorerasingorsuspended.
TheEEScommanddoesnotallowforreadstothearrayduringtheoperation.
UsetheStatusRegisterorPollingmethod(onlyDQ6toggles)todetermineifthedeviceisbusyorcompleted.
OncecompletedusetheStatusRegisterreadtoconfirmifthesectoristrustworthyornot.
Bit5oftheStatusRegister(SR[5])willbeclearedto0ifthesectoristrustworthy.
IfthesectorisnottrustworthythanSR[5]willbesetto1,RD/BY#willstayLOW,andeitheraSoftwareReset/ASOExitcommandoraStatusRegisterClearcommandisrequiredtoreturnthedevicetotheStandbyState.
OncetheEESiscompleted,theEACwillreturntotheStandbyState.
TheEEScommandrequirestEEStocompleteandupdatetheerasestatusinSR.
TheDRBbit(SR[7])maybereadtodeterminewhentheEEScommandisfinished.
IfasectorisfoundnoterasedwithSR[5]=1,thesectormustbeerasedagaintoensurereliablestorageofdatainthesector.
Table12.
UnlockBypassProgram(LLDFunction=lld_UnlockBypassProgramCmd)CycleDescriptionOperationByteAddressWordAdddressData1ProgramSetupWriteBase+XXXhBase+XXXh00A0h2ProgramCommandWriteProgramAddressProgramAddressProgramDataTable13.
UnlockBypassReset(LLDFunction=lld_UnlockBypassResetCmd)CycleDescriptionOperationByteAddressWordAdddressData1ResetCycle1WriteBase+XXXhBase+XXXh0090h2ResetCycle2WriteProgramAddressProgramAddress0000hDocumentNumber:002-00247Rev.
*LPage29of109S29GL01GT/S29GL512T5.
4.
6BlankCheckTheBlankCheckcommandwillconfirmiftheselectedmainflasharraysectoriscurrentlyerased(i.
e.
"TrustWorthy"and"Blank").
TheBlankCheckcommanddoesnotallowforreadstothearrayduringtheBlankCheck.
Readstothearraywhilethiscommandisexecutingwillreturnpollingdata.
ToinitiateaBlankCheckonaSector,write33htoaddress555hintheSector,whiletheEACisinthestandbystate.
TheBlankCheckcommandmaynotbewrittenwhilethedeviceisactivelyprogrammingorerasingorsuspended.
UsetheStatusRegisterorPollingmethod(equivalenttoanembeddederaseoperation)todetermineifthedeviceisbusyorcompleted.
OncecompletedtheStatusRegisterandthePollingmethodwilldisplayifthesectorisblank(equivalenttoasuccessfuleraseoperation)orifthesectorisnoterased.
Bit5oftheStatusRegister(SR[5])willbeclearedto0ifthesectorisblank.
IfthesectorisnotblankthanSR[5]willbesetto1,RD/BY#willstayLOW,andeitheraSoftwareReset/ASOExitcommandoraStatusRegisterClearcommandisrequiredtoreturnthedevicetotheStandbyState.
Assoonasanybitisfoundtonotbeerased,thedevicewillhalttheoperationandreporttheresults.
OncetheBlankCheckiscompleted,theEACwillreturntotheStandbyState.
5.
4.
7EraseMethods5.
4.
7.
1ChipEraseThechiperasefunctionerasestheentiremainFlashMemoryArray.
Thedevicedoesnotrequirethesystemtopreprogrampriortoerase.
TheEmbeddedErasealgorithmautomaticallyprogramsandverifiestheentirememoryforanall0datapatternpriortoelectricalerase.
Afterasuccessfulchiperase,alllocationswithinthedevicecontainFFFFh.
Thesystemisnotrequiredtoprovideanycontrolsortimingsduringtheseoperations.
Thechiperasecommandsequenceisinitiatedbywritingtwounlockcycles,followedbyasetupcommand.
Twoadditionalunlockwritecyclesarethenfollowedbythechiperasecommand,whichinturninvokestheEmbeddedErasealgorithm.
WhenWE#goesHIGH,attheendofthe6thcycle,theRY/BY#goesLOW.
WhentheEmbeddedErasealgorithmiscomplete,theEACreturnstothestandbystate.
NotethatwhiletheEmbeddedEraseoperationisinprogress,thesystemcannotreaddatafromthedevice.
ThesystemcandeterminethestatusoftheeraseoperationbyreadingtheRY/BY#,StatusRegisterorusingDataPolling.
RefertoSection8.
5Ready/Busy#(RY/BY#)onpage62forinformationonRY/BY#.
RefertoSection5.
5.
1StatusRegisteronpage37forinformationonthesestatusbits.
RefertoSection5.
5.
2DataPollingStatusonpage38formoreinformation.
Oncethechiperaseoperationhasbegun,onlyaStatusRead,HardwareRESETorPowercyclearevalid.
Allothercommandsareignored.
However,aHardwareResetorPowerCycleimmediatelyterminatestheeraseoperationandreturnstoreadmodeaftertRPHtime.
Ifachiperaseoperationisterminated,thechiperasecommandsequencemustbereinitiatedoncethedevicehasreturnedtotheidlestatetoensuredataintegrity.
SeeTable16onpage46,Section11.
4.
2AsynchronousWriteOperationsonpage84andSection11.
4.
3AlternateCE#ControlledWriteOperationsonpage91forparametersandtimingdiagrams.
SectorsprotectedbytheASPDYBandPPBbitswillnotbeerased.
SeeSection3.
4.
2ASPonpage13.
Ifasectorisprotectedduringchiperase,chiperasewillskiptheprotectedsectorandcontinuewithnextsectorerase.
Thestatusregistererasestatusbitandsectorlockbitarenotsetto1byafailederaseonaprotectedsector.
DocumentNumber:002-00247Rev.
*LPage30of109S29GL01GT/S29GL512T5.
4.
7.
2SectorEraseThesectorerasefunctionerasesonesectorinthememoryarray.
Thedevicedoesnotrequirethesystemtopreprogrampriortoerase.
TheEmbeddedErasealgorithmautomaticallyprogramsandverifiestheentiresectorforanall0datapatternpriortoelectricalerase.
Afterasuccessfulsectorerase,alllocationswithintheerasedsectorcontainFFFFh.
Thesystemisnotrequiredtoprovideanycontrolsortimingsduringtheseoperations.
Thesectorerasecommandsequenceisinitiatedbywritingtwounlockcycles,followedbyasetupcommand.
Twoadditionalunlockwritecyclesarethenfollowedbytheaddressofthesectortobeerased,andthesectorerasecommand.
WhenWE#goesHIGH,attheendofthe6thcycle,theRY/BY#goesLOW.
Afterthecommandsequenceiswritten,asectorerasetime-outoftSEAoccurs.
Duringthetime-outperiod,additionalsectoraddressesandsectorerasecommandsmaybewritten.
Invalidcommandswillbeignoredduringthetime-outperiod.
Loadingthesectorerasebuffermaybedoneinanysequence,andthenumberofsectorsmaybefromonesectortoallsectors.
ThetimebetweentheseadditionalcyclesmustbelessthantSEA,otherwiseerasuremaybegin.
Anysectoreraseaddressandcommandfollowingtheexceededtime-outmayormaynotbeaccepted.
Itisrecommendedthatprocessorinterruptsbedisabledduringthistimetoensureallcommandsareaccepted.
Theinterruptscanbere-enabledafterthelastSectorErasecommandiswritten.
NotethattheSecuredSiliconSector,autoselect,andCFIfunctionsareunavailablewhenaneraseoperationinisprogress.
Thesystemmustrewritethecommandsequenceandanyadditionaladdressesandcommands.
ThesystemcandeterminethestatusoftheeraseoperationbyreadingtheRY/BY#,StatusRegisterorusingDataPolling.
RefertoSection8.
5Ready/Busy#(RY/BY#)onpage62forinformationonRY/BY#.
RefertoSection5.
5.
1StatusRegisteronpage37forinformationonthesestatusbits.
RefertoSection5.
5.
2DataPollingStatusonpage38formoreinformation.
Oncethesectoreraseoperationhasbegun,theStatusRegisterReadandEraseSuspendcommandsarevalid.
Allothercommandsareignored.
However,notethatahardwareresetimmediatelyterminatestheeraseoperationandreturnstoreadmodeaftertRPHtime.
Ifasectoreraseoperationisterminated,thesectorerasecommandsequencemustbereinitiatedoncethedevicehasresetoperationtoensuredataintegrity.
Sector(s)protectedbytheASPDYBandPPBbitsorPasswordProtectionwillnotbeerased.
SeeSection3.
4.
2ASPonpage13.
Ifasectorisprotectedduringmulti-sectorerase,sectorerasewillskiptheprotectedsectorandcontinuewithnextsectorerase.
Thestatusregistererasestatusbitandsectorlockbitarenotsetto1byafailederaseonaprotectedsector.
SeeSection5.
1EmbeddedAlgorithmController(EAC)onpage19forparametersandtimingdiagrams.
SectorsprotectedbytheASPDYBandPPBbitswillnotbeerased.
SeeSection3.
4.
2ASPonpage13.
DocumentNumber:002-00247Rev.
*LPage31of109S29GL01GT/S29GL512TFigure6.
SectorEraseOperation[8]NoWriteUnlockCycles(x16):Address555h,DataAAhAddress2AAh,Data55hWriteSectorEraseCycles(x16):Address555h,Data80hAddress555h,DataAAhAddress2AAh,Data55hSectorAddress,Data30hWriteAdditionalSectorAddressesFAIL.
Writeresetcommandtoreturntoreadingarray.
PASS.
Devicereturnstoreadingarray.
PerformWriteOperationStatusAlgorithmSelectAdditionalSectorsUnlockCycle1UnlockCycle2YesYesYesYesYesNoNoNoNoLastSectorSelectedDoneEraseErrorCommandCycle1CommandCycle2CommandCycle3SpecifyfirstsectorforerasureErrorcondition(ExceededTimingLimits)StatusmaybeobtainedbyreadingStatusRegister,DataPolling,orRD/BY#methodsPollDQ3.
DQ3=1EachadditionalcyclemustbewrittenwithintSEAtimeoutThehostsystemmaymonitorStatusRegisterDQ7orDataPollingDQ3orwaittSEAtoensureacceptanceoferasecommandsNolimitonnumberofsectorsCommandsotherthanEraseSuspendorselectingadditionalsectorsforerasureduringtimeoutresetdevicetoreadingarraydataNote8.
Seecommandsummaryforx8buscycles.
DocumentNumber:002-00247Rev.
*LPage32of109S29GL01GT/S29GL512T5.
4.
8EraseSuspend/EraseResumeTheEraseSuspendcommandallowsthesystemtointerruptasectoreraseoperationandthenreaddatafrom,orprogramdatato,themainflasharray.
Thiscommandisvalidonlyduringsectoreraseorprogramoperation.
TheEraseSuspendcommandisignoredifwrittenduringthechiperaseoperation.
WhentheEraseSuspendcommandiswrittenduringthesectoreraseoperation,thedevicerequiresamaximumoftESL(erasesuspendlatency)tosuspendtheeraseoperationandupdatethestatusbits.
Aftertheeraseoperationhasbeensuspended,thepartenterstheerase-suspendmode.
Thesystemcanreaddatafromorprogramdatatothemainflasharray.
Readingatanyaddresswithinerase-suspendedsectorsproducesundetermineddata.
Thesystemcandetermineifasectorisactivelyerasingoriserase-suspendedbyreadingtheStatusRegisterorusingDataPolling.
RefertoSection5.
5.
1StatusRegisteronpage37forinformationonthesestatusbits.
RefertoSection5.
5.
2DataPollingStatusonpage38formoreinformation.
Afteranerase-suspendedprogramoperationiscomplete,theEACreturnstotheerase-suspendstate.
ThesystemcandeterminethestatusoftheprogramoperationbyreadingtheStatusRegister,justasinthestandardprogramoperation.
IfaprogramfailureoccursduringerasesuspendtheStatusRegisterClearorSoftResetcommandswillreturnthedevicetotheerasesuspendedstate.
Erasewillneedtoberesumedandcompletedbeforeagaintryingtoprogramthememoryarray.
AccessesandcommandsthatarevalidduringEraseSuspendare:Readtoanyothernon-suspendedsectorProgramtoanyothernon-suspendedsectorStatusRegisterReadStatusRegisterClearEraseResumecommandToresumethesectoreraseoperation,thesystemmustwritetheEraseResumecommand.
Thedevicewillreverttoerasingandthestatusbitswillbeupdated.
FurtherwritesoftheResumecommandareignored.
AnotherEraseSuspendcommandcanbewrittenafterthechiphasresumederasing.
ErasesuspendandresumeisnotsupportedwhileenteredinanASO.
DocumentNumber:002-00247Rev.
*LPage33of109S29GL01GT/S29GL512T5.
4.
9ASOEntryandExit5.
4.
9.
1ID-CFIASOThesystemcanaccesstheID-CFIASObyissuingtheID-CFIEntrycommandsequenceduringReadMode.
SeethedetaildescriptionTable23onpage56.
TheID-CFIASOallowsthefollowingactivities:ReadID-CFIASO,usingthesameSAasusedintheentrycommand.
ReadSectorProtectionStateatSectorAddress(SA)+2h.
Location2hprovidesvolatileinformationonthecurrentstateofsectorprotectionforthesectoraddressed.
Bit0ofthewordatlocation2hshowsthelogicalNANDofthePPBandDYBbitsrelatedtotheaddressedsectorsuchthatifthesectorisprotectedbyeitherthePPB=0ortheDYB=0bitforthatsectorthestateshownisprotected.
(1=Sectorprotected,0=Sectorunprotected.
)ASOExit.
ThefollowingisaCsourcecodeexampleofusingtheCFIEntryandExitfunctions.
RefertotheCypressLowLevelDriverUser'sGuideforgeneralinformationonCypressflashmemorysoftwaredevelopmentguidelines.
/*Example:CFIEntrycommand*/*((UINT16*)base_addr+0x55)=0x0098;/*writeCFIentrycommand*//*Example:CFIExitcommand*/*((UINT16*)base_addr+0x000)=0x00F0;/*writecfiexitcommand*/5.
4.
9.
2StatusRegisterASOTheStatusRegisterASOcontainsasinglewordofregisteredvolatilestatusforEmbeddedAlgorithms.
WhentheStatusRegisterreadcommandisissued,thecurrentstatusiscaptured(bytherisingedgeofWE#)intotheregisterandtheASOisentered.
TheStatusRegistercontentappearsonallwordlocations.
ThefirstreadaccessexitstheStatusRegisterASO(withtherisingedgeofCE#orOE#)andreturnstotheaddressspacemapinusewhentheStatusRegisterreadcommandwasissued.
WritecommandswillnotexittheStatusRegisterASOstate.
5.
4.
9.
3SecureSiliconRegionASOThesystemcanaccesstheSecureSiliconRegionbyissuingtheSecureSiliconRegionEntrycommandsequenceduringReadMode.
ThisentrycommandusestheSectorAddress(SA)inthecommandtodeterminewhichsectorwillbeoverlaid.
TheSecureSiliconRegionASOallowsthefollowingactivities:ReadSecureSiliconRegions.
ProgramthecustomerSecureSiliconRegionisallowedusingtheWordorWriteBufferProgrammingcommands.
TheUnlockBypasscommandsandusingACCisnotallowed.
ASOExitusinglegacySecureSiliconExitcommandforbackwardsoftwarecompatibility.
ASOExitusingthecommonexitcommandforallASO-alternativeforaconsistentexitmethod.
TherecommendedprocedureforusingtheSSRregion3readpasswordmodeisasfollows:ProgramthedatayouwantinSSRregion3.
Clearlockregisterbit10to0,whichdisablefurtherprogramoperations.
ProgramtheSSRregion3password.
Clearlockregisterbit11to0,whichwillenabletheSSRregion3passwordfeaturewhichrequiresthatapasswordbeappliedbeforereadingSSRregion3isallowed.
DocumentNumber:002-00247Rev.
*LPage34of109S29GL01GT/S29GL512T5.
4.
9.
4LockRegisterASOThesystemcanaccesstheLockRegisterbyissuingtheLockRegisterentrycommandsequenceduringReadMode.
Thisentrycommanddoesnotuseasectoraddressfromtheentrycommand.
TheLockRegisterappearsatwordlocation0inthedeviceaddressspace.
Allotherlocationsinthedeviceaddressspaceareundefined.
TheLockRegisterASOallowsthefollowingactivities:ReadLockRegister,usingdeviceaddresslocation0.
ProgramthecustomerLockRegisterusingamodifiedWordProgrammingcommand.
ASOExitusinglegacyCommandSetExitcommandforbackwardsoftwarecompatibility.
ASOExitusingthecommonexitcommandforallASO—alternativeforaconsistentexitmethod.
5.
4.
9.
5ECCStatusASOThesystemcanaccesstheECCStatusASObyissuingtheECCStatusentrycommandsequenceduringReadMode.
TheECCStatusASOprovidestheenabledordisabledstatusoftheECCfunctionforaspecificPageoriftheECClogiccorrectedaSingleBitErrortheselectedPage.
TheECCStatusASOallowsthefollowingactivities:ReadECCStatusfortheselectedpage.
5.
4.
9.
6PasswordASOThesystemcanaccessthePasswordASObyissuingthePasswordentrycommandsequenceduringReadMode.
Thisentrycommanddoesnotuseasectoraddressfromtheentrycommand.
ThePasswordappearsatwordlocations0to3inthedeviceaddressspace.
Allotherlocationsinthedeviceaddressspaceareundefined.
ThePasswordASOallowsthefollowingactivities:ReadPassword,usingdeviceaddresslocation0to3(ifnotlocked).
ProgramthePasswordusingamodifiedWordProgrammingcommand.
UnlockthePPBLockbitwiththePasswordUnlockcommand.
ASOExitusinglegacyCommandSetExitcommandforbackwardsoftwarecompatibility.
ASOExitusingthecommonexitcommandforallASO—alternativeforaconsistentexitmethod.
5.
4.
9.
7PPBASOThesystemcanaccessthePPBASObyissuingthePPBentrycommandsequenceduringReadMode.
Thisentrycommanddoesnotuseasectoraddressfromtheentrycommand.
ThePPBbitforasectorappearsinbit0ofallwordlocationsinthesector.
ThePPBASOallowsthefollowingactivities:ReadPPBprotectionstatusofasectorinbit0ofanywordinthesector.
ProgramthePPBbitusingamodifiedWordProgrammingcommand.
EraseallPPBbitswiththePPBerasecommand.
ASOExitusinglegacyCommandSetExitcommandforbackwardsoftwarecompatibility.
ASOExitusingthecommonexitcommandforallASO—alternativeforaconsistentexitmethod.
DocumentNumber:002-00247Rev.
*LPage35of109S29GL01GT/S29GL512T5.
4.
9.
8PPBLockASOThesystemcanaccessthePPBLockASObyissuingthePPBLockentrycommandsequenceduringReadMode.
Thisentrycommanddoesnotuseasectoraddressfromtheentrycommand.
TheglobalPPBLockbitappearsinbit0ofallwordlocationsinthedevice.
ThePPBLockASOallowsthefollowingactivities:ReadPPBLockprotectionstatusinbit0ofanywordinthedeviceaddressspace.
SetthePPBLockbitusingamodifiedWordProgrammingcommand.
ASOExitusinglegacyCommandSetExitcommandforbackwardsoftwarecompatibility.
ASOExitusingthecommonexitcommandforallASO—alternativeforaconsistentexitmethod.
5.
4.
9.
9DYBASOThesystemcanaccesstheDYBASObyissuingtheDYBentrycommandsequenceduringReadMode.
Thisentrycommanddoesnotuseasectoraddressfromtheentrycommand.
TheDYBbitforasectorappearsinbit0ofallwordlocationsinthesector.
TheDYBASOallowsthefollowingactivities:ReadDYBprotectionstatusofasectorinbit0ofanywordinthesector.
SettheDYBbitusingamodifiedWordProgrammingcommand.
CleartheDYBbitusingamodifiedWordProgrammingcommand.
ASOExitusinglegacyCommandSetExitcommandforbackwardsoftwarecompatibility.
ASOExitusingthecommonexitcommandforallASO—alternativeforaconsistentexitmethod.
5.
4.
9.
10Software(Command)Reset/ASOexitSoftwareresetispartofthecommandset(SeeTable21onpage50)thatalsoreturnstheEACtostandbystateandmustbeusedforthefollowingconditions:ExitASOmodesCleartimeoutbit(DQ5)fordatapollingwhentimeoutoccursSoftwareResetdoesnotaffectEAmode.
Resetcommandsareignoredonceprogrammingorerasurehasbegun,untiltheoperationiscomplete.
SoftwareResetdoesnotaffectoutputs;itservesprimarilytoreturntoReadModefromanASOmodeorfromafailedprogramoreraseoperation.
SoftwareResetmaycauseareturntoReadModefromundefinedstatesthatmightresultfrominvalidcommandsequences.
However,aHardwareResetmayberequiredtoreturntonormaloperationfromsomeundefinedstates.
Thereisnosoftwareresetlatencyrequirement.
TheresetcommandisexecutedduringthetWPHperiod.
DocumentNumber:002-00247Rev.
*LPage36of109S29GL01GT/S29GL512T5.
4.
9.
11ContinuityCheckFeatureTheContinuityCheckprovidesabasictestofconnectivityfrompackageconnectorstoeachdiepadandtoeachindividualdieinaDDP.
Thisfeatureisanextensionofthelegacyunlockcyclesequenceusedatthebeginningofseveralcommands.
Theunlocksequenceistwowriteswithalternatingonesandzerospatternonthelowerportionoftheaddressanddatalineswiththepatterninvertedbetweenthefirstandsecondwrite.
Toperformacontinuitycheckthesepatternsareextendedtocoveralladdress(Amaxto0)anddatalines(DQ15to0).
Alogiccomparisoncircuitlooksforthealternatingoneandzeropatternthatisinvertedbetweenthetwowritecycles.
InthecaseofaDDPtheA26inputisusedtoselectwhichdiethewritesaresentto.
Whenthecorrectpatternsaredetectedthestatusregisterbitzeroissettoone.
Thestatusregisterclearcommandwillclearthestatusregisterbitzerotoazero.
Thefollowingtabledescribesthecontinuitychecksequenceforasingledie(e.
g.
GL01GT)inx16.
Thefollowingtabledescribesthecontinuitychecksequenceforasingledie(e.
g.
GL01GT)inx8.
PhaseAccesstypeAddressA26AddressA25toA0DataCommentSet-upWriten/aXXXX555XX71CleardiezerostatusWriten/a555XX70WriteStatusRegisterReadcommandtodiezeroReadn/axRDReadstatusfromdiezerotoconfirmstatusbitzero=0ContinuityPatternWriten/a2AAAA55FF00FirstcontinuitycycleWriten/a15555AA00FFSecondcontinuitycycleVerifycontinuitypatterndetectedWriten/a555XX70WriteStatusRegisterReadcommandtodiezeroReadn/axRDReadstatusfromdiezerotoconfirmstatusbitzero=1forcontinuitypatterndetectedPhaseAccesstypeAddressA26AddressA25toA-1DataCommentSet-upWriten/aXXXX55571CleardiezerostatusWriten/aAAA70WriteStatusRegisterReadcommandtodiezeroReadn/axRDReadstatusfromdiezerotoconfirmstatusbitzero=0ContinuityPatternWriten/a55554ABFFFirstcontinuitycycleWriten/a2AAAB5400SecondcontinuitycycleVerifycontinuitypatterndetectedWriten/a55570WriteStatusRegisterReadcommandtodiezeroReadn/axRDReadstatusfromdiezerotoconfirmstatusbitzero=1forcontinuitypatterndetectedDocumentNumber:002-00247Rev.
*LPage37of109S29GL01GT/S29GL512T5.
5StatusMonitoringTherearethreemethodsformonitoringEAstatus.
PreviousgenerationsoftheS29GLflashfamilyusedthemethodscalledDataPollingandReady/Busy#(RY/BY#)Signal.
ThesemethodsarestillsupportedbytheS29GL-Tfamily.
OneadditionalmethodisreadingtheStatusRegister.
5.
5.
1StatusRegisterThestatusofprogramanderaseoperationsisprovidedbyasingle16-bitstatusregister.
TheStatusRegisterReadcommandiswrittenfollowedbyareadaccessofthestatusregisterinformation.
WhentheStatusRegisterreadcommandisissued,thecurrentstatusiscaptured(bytherisingedgeofWE#)intotheregisterandtheASOisentered.
Thecontentsofthestatusregisterisaliased(overlaid)thefullmemoryaddressspace.
Validread(CE#andOE#LOW)accessintheStatusRegisterASOexitstheASO(withtherisingedgeofCE#orOE#fortCEPH/tOEPHtime)andreturnstotheaddressspacemapinusewhentheStatusRegisterReadcommandwasissued.
Whileinx8modethefullStatusRegistercanberead(boththeupperbyteandlowerbyte)withoneStatusRegisterentrybykeepingCE#andOE#LOWandhavingatransitiononA-1.
WriteoperationsareignoredandthedevicewillstayinStatusRegisterASO.
Thestatusregistercontainsbitsrelatedtotheresults–successorfailure–ofthemostrecentlycompletedEmbeddedAlgorithms(EA):EraseStatus(bit5),ProgramStatus(bit4),WriteBufferAbort(bit3),SectorLockedStatus(bit1),ContinuityCheckPatternDetected(bit0).
and,bitsrelatedtothecurrentstateofanyinprocessEA:DeviceBusy(bit7),EraseSuspended(bit6),ProgramSuspended(bit2),ThecurrentstatebitsindicatewhetheranEAisinprocess,suspended,orcompleted.
Theupper8bits(bits15:8)arereserved.
ThesehaveundefinedHighorLowvaluethatcanchangefromonestatusreadtoanother.
Thesebitsshouldbetreatedasdon'tcareandignoredbyanysoftwarereadingstatus.
TheSoftResetCommandwillclearto0bits[5,4,1,0]ofthestatusregisterifStatusRegisterbit3=0.
Itwillnotaffectthecurrentstatebits.
TheClearStatusRegisterCommandwillclearto0bits[5,4,3,1,0]ofthestatusregisterbutwillnotaffectthecurrentstatebits.
DocumentNumber:002-00247Rev.
*LPage38of109S29GL01GT/S29GL512T5.
5.
2DataPollingStatusDuringanactiveEmbeddedAlgorithmtheEACswitchestotheDataPollingASOtodisplayEAstatustoanyreadaccess.
Asinglewordofstatusinformationisaliasedinalllocationsofthedeviceaddressspace.
InthestatuswordthereareseveralbitstodeterminethestatusofanEA.
ThesearereferredtoasDQbitsastheyappearonthedatabusduringareadaccesswhileanEAisinprogress.
DQbits15to8,DQ4,andDQ0arereservedandprovideundefineddata.
Statusmonitoringsoftwaremustmaskthereservedbitsandtreatthemasdon'tcare.
InX8modeA-1isignoredwhenperformingDataPolling.
Table15onpage42andthefollowingsubsectionsdescribethefunctionsoftheremainingbits.
5.
5.
2.
1DQ7:Data#PollingTheData#Pollingbit,DQ7,indicatestothehostsystemwhetheranEmbeddedAlgorithmisinprogressorhascompleted.
Data#PollingisvalidaftertherisingedgeofthefinalWE#pulseintheprogramorerasecommandsequence.
NotethattheData#Pollingisvalidonlyforthelastwordbeingprogrammedinthewrite-buffer-pageduringWriteBufferProgramming.
ReadingData#Pollingstatusonanywordotherthanthelastwordtobeprogrammedinthewrite-buffer-pagewillreturnfalsestatusinformation.
DuringtheEmbeddedProgramalgorithm,thedeviceoutputsonDQ7thecomplementofthedatabitprogrammedtoDQ7.
ThisDQ7statusalsoappliestoprogrammingduringEraseSuspend.
WhentheEmbeddedProgramalgorithmiscomplete,thedeviceoutputsthedatabitprogrammedtobit7ofthelastwordprogrammed.
IncaseofaProgramSuspend,thedeviceallowsonlyreadingarraydata.
Ifaprogramaddressfallswithinaprotectedsector,Data#PollingonDQ7isactivefortDP,thenthedevicereturnstoreadingarraydata.
DuringtheEmbeddedErase,EvaluateEraseStatus,orBlankCheckalgorithms,Data#Pollingproducesa0onDQ7.
Whenthealgorithmiscomplete,orifthedeviceenterstheEraseSuspendmode,Data#Pollingproducesa1onDQ7.
Thisisanalogoustothecomplement/truedatumoutputdescribedfortheEmbeddedProgramalgorithm:theerasefunctionchangesallthebitsinasectorto1;priortothis,thedeviceoutputsthecomplementor'0'.
ThesystemmustprovideanaddresswithinthesectorselectedforerasuretoreadvalidstatusinformationonDQ7.
Afteranerasecommandsequenceiswritten,ifthesectorselectedforerasingisprotected,Data#PollingonDQ7isactivefortDP,thenthedevicereturnstoreadingarraydata.
Table14.
StatusRegisterBit#15:876543210BitDescriptionReservedDeviceReadyBitEraseSuspendStatusBitEraseStatusBitProgramStatusBitWriteBufferAbortStatusBitProgramSuspendStatusBitSectorLockStatusBitContinuityCheckBitNameDRBESSBESBPSBWBASBPSSBSLSBCCResetStatusX10000000BusyStatusInvalid0InvalidInvalidInvalidInvalidInvalidInvalidInvalidReadyStatusX10=NoEraseinSuspension1=EraseinSuspension0=Erasesuccessful1=Erasefail0=Programsuccessful1=Programfail0=Programnotaborted1=ProgramabortedduringWritetoBuffercommand0=NoPrograminsuspension1=Programinsuspension0=Sectornotlockedduringoperation1=Sectorlockederror0=ContinuityCheckPatternnotdetected1=ContinuityCheckPatterndetectedNotes9.
Bits15thru8arereservedforfutureuseandmaydisplayas0or1.
Thesebitsshouldbeignored(masked)whencheckingstatus.
10.
Bit7is1whenthereisnoEmbeddedAlgorithminprogressinthedevice.
11.
Bits6thru1arevalidonlyifBit7is1.
12.
Allbitsareputintheirresetstatusbycoldresetorwarmreset.
13.
Bits5,4,3,and1areclearedto0bytheClearStatusRegistercommandorResetcommand.
14.
UponissuingtheEraseSuspendCommand,theusermustcontinuetoreadstatusuntilDRBbecomes1.
15.
ESSBisclearedto0bytheEraseResumeCommand.
16.
ESBreflectssuccessorfailureofthemostrecenteraseoperation.
17.
PSBreflectssuccessorfailureofthemostrecentprogramoperation.
18.
Duringerasesuspend,programmingtothesuspendedsectororasectorinthequeue,willbeignoredandnoerrorreported.
19.
UponissuingtheProgramSuspendCommand,theusermustcontinuetoreadstatusuntilDRBbecomes1.
20.
PSSBisclearedto0bytheProgramResumeCommand.
21.
SLSBindicatesthataprogramoreraseoperationfailedbecausethesectorwaslocked.
22.
SLSBreflectsthestatusofthemostrecentprogramoreraseoperation.
DocumentNumber:002-00247Rev.
*LPage39of109S29GL01GT/S29GL512TJustpriortothecompletionofanEmbeddedProgramorEraseoperation,DQ7maychangeasynchronouslywithDQ6-DQ0whileOutputEnable(OE#)isassertedLOW.
Thatis,thedevicemaychangefromprovidingstatusinformationtovaliddataonDQ7.
DependingonwhenthesystemsamplestheDQ7output,itmayreadthestatusorvaliddata.
EvenifthedevicehascompletedtheprogramoreraseoperationandDQ7hasvaliddata,thedataoutputsonDQ6-DQ0maybestillinvalid.
ValiddataonDQ7-D00appearsonsuccessivereadcycles.
WhenthesystemdetectsDQ7haschangedfromthecomplementtotruedata,itcanreadvaliddataatDQ15-DQ0(Dq7-DQ0inx8mode)onthefollowingreadcycles.
ThisisbecauseDQ7maychangeasynchronouslywithDQ6-DQ0whileOutputEnable(OE#)isassertedLOW.
ThisisillustratedinFigure29onpage89.
Figure15onpage42showstheoutputsforData#pollingonDQ7.
Figure4onpage24showstheData#pollingalgorithmuseinWriteBufferProgramming.
ValidDQ7datapollingstatusmayonlybereadfrom:theaddressofthelastwordloadedintotheWriteBufferforaWriteBufferprogrammingoperation;thelocationofasinglewordprogrammingoperation;alocationinasectorbeingerased,orevaluateerasestatus,orblankchecked;oralocationinanysectorduringchiperase.
Figure7.
Data#PollingAlgorithm[23]STARTReadDQ7-DQ0-FAILDQ7=DataNoYesDQ5=1NoYesDQ7=DataNoYesPASSReadDQ7-DQ0Note23.
DQ7shouldberecheckedevenifDQ5=1becauseDQ7maychangesimultaneouslywithDQ5.
DocumentNumber:002-00247Rev.
*LPage40of109S29GL01GT/S29GL512T5.
5.
2.
2DQ6:ToggleBitIToggleBitIonDQ6indicateswhetheranEmbeddedProgramorErasealgorithmisinprogressorcomplete,orwhetherthedevicehasenteredtheProgramSuspendorEraseSuspendmode.
ToggleBitImaybereadatanyaddress,andisvalidaftertherisingedgeofthefinalWE#pulseinthecommandsequence(priortotheprogramoreraseoperation).
DuringanEmbeddedProgramorErasealgorithmoperation,successivereadcyclestoanyaddresscauseDQ6totoggle.
(ThesystemmayuseeitherOE#orCE#tocontrolthereadcycles).
Whentheoperationiscomplete,DQ6stopstoggling.
Afteranerasecommandsequenceiswritten,ifthesectorselectedforerasingisprotected,DQ6togglesfortDP,thentheEACreturnstostandby(ReadMode).
Iftheselectedsectorisnotprotected,theEmbeddedErasealgorithmerasestheunprotectedsector.
ThesystemcanuseDQ6andDQ2togethertodeterminewhetherasectorisactivelyerasingorerase-suspended.
Whenthedeviceisactivelyerasing(thatis,theEmbeddedErasealgorithmisinprogress),DQ6toggles.
WhenthedeviceenterstheProgramSuspendmodeorEraseSuspendmode,DQ6stopstoggling.
However,thesystemmustalsouseDQ2todeterminewhichsectorsareerasing,orerase-suspended.
Alternatively,thesystemcanuseDQ7(seeSection5.
5.
2.
1DQ7:Data#Pollingonpage38).
DQ6alsotogglesduringtheerase-suspend-programmode,andstopstogglingoncetheEmbeddedProgramalgorithmiscomplete.
Table15onpage42showstheoutputsforToggleBitIonDQ6.
Figure8onpage41showsthetogglebitalgorithminflowchartform,andtheSection5.
5.
2.
5ReadingToggleBitsDQ6/DQ2onpage41explainsthealgorithm.
Figure8onpage41showsthetogglebittimingdiagrams.
SeealsoSection5.
5.
2.
4DQ2:ToggleBitIIonpage40.
5.
5.
2.
3DQ3:SectorEraseTimerAfterwritingasectorerasecommandsequence,thesystemmayreadDQ3todeterminewhetherornoterasurehasbegun.
SeeSection5.
4.
7.
2SectorEraseonpage30formoredetails.
(Thesectorerasetimerdoesnotapplytothechiperasecommand.
)Ifadditionalsectorsareselectedforerasure,theentiretime-outalsoappliesaftereachadditionalsectorerasecommand.
Whenthetime-outperiodiscomplete,DQ3switchesfroma0toa1.
IfthetimebetweenadditionalsectorerasecommandsfromthesystemcanbeassumedtobelessthantSEA,thenthesystemneednotmonitorDQ3.
Afterthesectorerasecommandiswritten,thesystemshouldreadthestatusofDQ7(Data#Polling)orDQ6(ToggleBitI)toensurethatthedevicehasacceptedthecommandsequence,andthenreadDQ3.
IfDQ3is1,theEmbeddedErasealgorithmhasbegun;allfurthercommands(exceptEraseSuspend)areignoreduntiltheeraseoperationiscomplete.
IfDQ3is0,thedeviceacceptsadditionalsectorerasecommands.
Toensurethecommandhasbeenaccepted,thesystemsoftwareshouldcheckthestatusofDQ3priortoandfollowingeachsub-sequentsectorerasecommand.
IfDQ3ishighonthesecondstatuscheck,thelastcommandmightnothavebeenaccepted.
Table15onpage42showsthestatusofDQ3relativetotheotherstatusbits.
5.
5.
2.
4DQ2:ToggleBitIIToggleBitIIonDQ2,whenusedwithDQ6,indicateswhetheraparticularsectorisactivelyerasing(thatis,theEmbeddedErasealgorithmisinprogress),orwhetherthatsectoriserase-suspended.
ToggleBitIIisvalidaftertherisingedgeofthefinalWE#pulseinthecommandsequence.
DQ2toggleswhenthesystemreadsataddresseswithinthesectorselectedforerasure(orallsectorsselectedforeraseoperationduringmulti-sectorerase).
(ThesystemmayuseeitherOE#orCE#tocontrolthereadcycles).
ButDQ2cannotdistinguishwhetherthesectorisactivelyerasingoriserase-suspended.
DQ6,bycomparison,indicateswhetherthedeviceisactivelyerasing,orisinEraseSuspend,butcannotdistinguishifthesectorisselectedforerasure.
Thus,bothstatusbitsarerequiredforsectorandmodeinformation.
RefertoTable15onpage42tocompareoutputsforDQ2andDQ6.
Figure7onpage39showsthetogglebitalgorithminflowchartform,andtheSection5.
5.
2.
5ReadingToggleBitsDQ6/DQ2onpage41explainsthealgorithm.
SeealsoFigure8onpage41showsthetogglebittimingdiagram.
DocumentNumber:002-00247Rev.
*LPage41of109S29GL01GT/S29GL512T5.
5.
2.
5ReadingToggleBitsDQ6/DQ2RefertoFigure7onpage39forthefollowingdiscussion.
Wheneverthesysteminitiallybeginsreadingtogglebitstatus,itmustreadDQ7-DQ0atleasttwiceinarowtodeterminewhetheratogglebitistoggling.
Typically,thesystemwouldnoteandstorethevalueofthetogglebitafterthefirstread.
Afterthesecondread,thesystemwouldcomparethenewvalueofthetogglebitwiththepreviousvalue.
Ifthetogglebitisnottoggling,thedevicehascompletedtheprogramorerasesoperation.
ThesystemcanreadarraydataonDQ15-DQ0(DQ7-DQ0inx8mode)onthefollowingreadcycle.
However,ifaftertheinitialtworeadcycles,thesystemdeterminesthatthetogglebitisstilltoggling,thesystemalsoshouldnotewhetherthevalueofDQ5isHigh(seeSection5.
5.
2.
6DQ5:ExceededTimingLimitsonpage42).
Ifitis,thesystemshouldthendetermineagainwhetherthetogglebitistoggling,sincethetogglebitmayhavestoppedtogglingjustasDQ5wentHigh.
Ifthetogglebitisnolongertoggling,thedevicehassuccessfullycompletedtheprogramoreraseoperation.
Ifitisstilltoggling,thedevicedidnotcompletetheoperationsuccessfully,andthesystemmustwritetheresetcommandtoreturntoreadingarraydata.
Itisrecommendedthatdatareadforpollingpurposesonlybeusedforpollingpurposes.
Oncetogglinghasstoppedarraydatawillbeavailableonsubsequentreads.
TheremainingscenarioisthatthesysteminitiallydeterminesthatthetogglebitistogglingandDQ5hasnotgoneHigh.
ThesystemmaycontinuetomonitorthetogglebitandDQ5throughsuccessivereadcycles,determiningthestatusasdescribedinthepreviousparagraph.
Alternatively,itmaychoosetoperformothersystemtasks.
Inthiscase,thesystemmuststartatthebeginningofthealgorithmwhenitreturnstodeterminethestatusoftheoperation(operationasshowninFigure8).
Figure8.
ToggleBitProgram[24,25]Notes24.
Readtogglebittwicetodeterminewhetherornotitistoggling.
Seetext.
25.
RechecktogglebitbecauseitmaystoptogglingasDQ5changesto1.
Seetext.
STARTReadDQ7-DQ0(Note1)Erase/ProgramOperationNotCompleteToggleBit=ToggleYesNoDQ5=1NoYesReadDQ7-DQ0Twice(Notes1,2)ToggleBit=ToggleYesNoErase/ProgramOperationCompleteReadDQ7-DQ0DocumentNumber:002-00247Rev.
*LPage42of109S29GL01GT/S29GL512T5.
5.
2.
6DQ5:ExceededTimingLimitsDQ5indicateswhethertheprogramorerasetimehasexceededaspecifiedinternalpulsecountlimit.
UndertheseconditionsDQ5producesa1.
Thisisafailureconditionthatindicatestheprogramorerasecyclewasnotsuccessfullycompleted.
Thesystemmustissuetheresetcommandtoreturnthedevicetoreadingarraydata.
Whenatimeoutoccurs,thesoftwaremustsendaSoftResetorStatusRegisterResetcommandtoclearthetimeoutbit(DQ5)andtoreturntheEACtotheinitialstate.
Inthiscase,itispossiblethattheflashwillcontinuetocommunicatebusyforuptotTORaftertheresetcommandissent.
5.
5.
2.
7DQ1:Write-to-BufferAbortDQ1indicateswhetheraWrite-to-Bufferoperationwasaborted.
UndertheseconditionsDQ1producesa1.
ThesystemmustissuetheWrite-to-Buffer-Abort-ResetcommandsequenceorStatusRegisterClearcommandtoreturntheEACtostandby(ReadMode)andtheStatusRegisterfailedbitsarecleared.
SeeSection5.
4.
1.
2WriteBufferProgrammingonpage23formoredetails.
Table15.
DataPollingStatusOperationDQ7[27]DQ6DQ5[26]DQ3DQ2[27]DQ1[29]RY/BY#StandardModeEmbeddedProgramAlgorithmDQ7#Toggle0N/ANoToggle00ReadingwithinErasingSector[30]0Toggle01ToggleN/A0ReadingOutsideerasingSector[30]0Toggle01NoToggleN/A0ProgramSuspendMode[28]ReadingwithinProgramSuspendedSectorINVALID(NotAllowed)INVALID(NotAllowed)INVALID(NotAllowed)INVALID(NotAllowed)INVALID(NotAllowed)INVALID(NotAllowed)1ReadingwithinNon-ProgramSuspendedSectorDataDataDataDataDataData1EraseSuspendMode[32]ReadingwithinEraseSuspendedSector1NoToggle0N/AToggleN/A1ReadingwithinNon-EraseSuspendSectorDataDataDataDataDataData1ProgrammingwithinNon-EraseSuspendedSectorDQ7#Toggle0N/AN/AN/A0Write-to-Buffer[29,31]BUSYStateDQ7#Toggle0N/ANoToggle00ExceededTimingLimitsDQ7#Toggle1N/AN/A00ABORTStateDQ7#Toggle0N/AN/A10Notes26.
DQ5switchesto'1'whenanEmbeddedProgramorEmbeddedEraseoperationhasexceededthemaximumtiminglimits.
SeeSection5.
5.
2.
6DQ5:ExceededTimingLimitsonpage42formoreinformation.
27.
DQ7andDQ2requireavalidaddresswhenreadingstatusinformation.
Refertotheappropriatesubsectionforfurtherdetails.
28.
DataareinvalidforaddressesinaProgramSuspendedLine.
AlladdressesotherthantheProgramSuspendedLinecanbereadforvaliddata.
29.
DQ1indicatestheWrite-to-BufferABORTstatusduringWrite-Buffer-Programmingoperations.
30.
DQ3=0for50safterlastsectorisloadedduringamulti-sectorerase.
31.
Appliesonlytoprogramoperations.
32.
IfSECSIisoverlaidonasuspendedsector,ifaprogramoperationisinitiatedwhileintheSECSImode,DQ6willtoggleandDQ2willnottoggleduringtheembeddedoperation.
DocumentNumber:002-00247Rev.
*LPage43of109S29GL01GT/S29GL512T5.
6ErrorTypesandClearingProceduresTherearethreetypesoferrorsreportedbytheembeddedoperationstatusmethods.
Dependingontheerrortype,thestatusreportedandprocedureforclearingtheerrorstatusisdifferent.
Followingistheclearingoferrorstatus:IfanASOwasenteredbeforetheerrorthedeviceremainsenteredintheASOawaitingASOreadoracommandwrite.
Ifanerasewassuspendedbeforetheerrorthedevicereturnstotheerasesuspendedstateawaitingflasharrayreadoracommandwrite.
Otherwise,thedevicewillbeinstandbystateawaitingflasharrayreadoracommandwrite.
5.
6.
1EmbeddedOperationErrorIfanerroroccursduringanembeddedoperation(program,erase,blankcheck,orpasswordunlock)thedevice(EAC)remainsbusy.
TheRY/BY#outputremainsLOW,datapollingstatuscontinuestobeoverlaidonalladdresslocations,andthestatusregistershowsreadywithvalidstatusbits.
Thedeviceremainsbusyuntiltheerrorstatusisdetectedbythehostsystemstatusmonitoringandtheerrorstatusiscleared.
DuringembeddedalgorithmerrorstatustheDataPollingstatuswillshowthefollowing:DQ7istheinversionoftheDQ7bitinthelastwordloadedintothewritebufferorlastwordofthepasswordinthecaseofthepasswordunlockcommand.
DQ7=0foranerase,evaluateerasestatus,blankcheckfailureDQ6continuestotoggleDQ5=1;FailureoftheembeddedoperationDQ4isRFUandshouldbetreatedasdon'tcare(masked)DQ3=1toindicateanembeddedsectorerasewasinprogressor0toindicateanembeddedprogramwasinprogressDQ2continuestotoggle,independentoftheaddressusedtoreadstatusDQ1=0;WritebufferaborterrorDQ0isRFUandshouldbetreatedasdon'tcare(masked)DuringembeddedalgorithmerrorstatustheStatusRegisterwillshowthefollowing:SR[7]=1;ValidstatusdisplayedSR[6]=X;MayormaynotbeerasesuspendedduringtheEAerrorSR[5]=1oneraseorblankcheckerror;else=0SR[4]=1onprogramorpasswordunlockerror;else=0SR[3]=0;WritebufferabortSR[2]=0;ProgramsuspendedSR[1]=0;ProtectedsectorSR[0]=X;RFU,treatasdon'tcare(masked)Whentheembeddedalgorithmerrorstatusisdetected,itisnecessarytocleartheerrorstatusinordertoreturntonormaloperation,withRY/BY#HIGH,readyforanewreadorcommandwrite.
Theerrorstatuscanbeclearedbywriting:ResetcommandStatusRegisterClearcommandCommandsthatareacceptedduringembeddedalgorithmerrorstatusare:StatusRegisterReadResetcommandStatusRegisterClearcommandDocumentNumber:002-00247Rev.
*LPage44of109S29GL01GT/S29GL512T5.
6.
2ProtectionErrorIfanembeddedalgorithmattemptstochangedatawithinaprotectedarea(program,oreraseofaprotectedsectororOTParea)thedevice(EAC)goesbusyforaperiodoftDPthenreturnstonormaloperation.
DuringthebusyperiodtheRY/BY#outputremainsLOW,datapollingstatuscontinuestobeoverlaidonalladdresslocations,andthestatusregistershowsnotreadywithinvalidstatusbits(SR[7]=0).
Duringtheprotectionerrorstatusbusyperiodthedatapollingstatuswillshowthefollowing:DQ7istheinversionoftheDQ7bitinthelastwordloadedintothewritebuffer.
DQ7=0foranerasefailureDQ6continuestotoggle,independentoftheaddressusedtoreadstatusDQ5=0;toindicatenofailureoftheembeddedoperationduringthebusyperiodDQ4isRFUandshouldbetreatedasdon'tcare(masked)DQ3=1toindicateembeddedsectoreraseinprogressDQ2continuestotoggle,independentoftheaddressusedtoreadstatusDQ1=0;WritebufferaborterrorDQ0isRFUandshouldbetreatedasdon'tcare(masked)Commandsthatareacceptedduringtheprotectionerrorstatusbusyperiodare:StatusRegisterReadWhenthebusyperiodendsthedevicereturnstonormaloperation,thedatapollingstatusisnolongeroverlaid,RY/BY#isHIGH,andthestatusregistershowsreadywithvalidstatusbits.
Thedeviceisreadyforflasharrayreadorwriteofanewcommand.
AftertheprotectionerrorstatusbusyperiodtheStatusRegisterwillshowthefollowing:SR[7]=1;ValidstatusdisplayedSR[6]=X;MayormaynotbeerasesuspendedaftertheprotectionerrorbusyperiodSR[5]=1oneraseerror,else=0SR[4]=1onprogramerror,else=0SR[3]=0;ProgramnotabortedSR[2]=0;NoPrograminsuspensionSR[1]=1;ErrorduetoattemptingtochangeaprotectedlocationSR[0]=X;RFU,treatasdon'tcare(masked)Commandsthatareacceptedaftertheprotectionerrorstatusbusyperiodare:AnycommandDocumentNumber:002-00247Rev.
*LPage45of109S29GL01GT/S29GL512T5.
6.
3WriteBufferAbortIfanerroroccursduringaWritetoBuffercommandthedevice(EAC)remainsbusy.
TheRY/BY#outputremainsLOW,datapollingstatuscontinuestobeoverlaidonalladdresslocations,andthestatusregistershowsreadywithvalidstatusbits.
Thedeviceremainsbusyuntiltheerrorstatusisdetectedbythehostsystemstatusmonitoringandtheerrorstatusiscleared.
Duringwritetobufferabort(WBA)errorstatustheDataPollingstatuswillshowthefollowing:DQ7istheinversionoftheDQ7bitinthelastwordloadedintothewritebufferDQ6continuestotoggle,independentoftheaddressusedtoreadstatusDQ5=0;toindicatenofailureoftheprogrammingoperation.
WBAisanerrorinthevaluesinputbytheWritetoBuffercommandbeforetheprogrammingoperationcanbeginDQ4isRFUandshouldbetreatedasdon'tcare(masked)DQ3isdon'tcareafterprogramoperationasnoeraseisinprogress.
IftheWriteBufferProgramoperationwasstartedafteraneraseoperationhadbeensuspendedthenDQ3=1.
IftherewasnoeraseoperationinprogressthenDQ3isadon'tcareandshouldbemasked.
DQ2doesnottoggleafterprogramoperationasnoeraseisinprogress.
IftheWriteBufferProgramoperationwasstartedafteraneraseoperationhadbeensuspendedthenDQ2willtoggleinthesectorwheretheeraseoperationwassuspendedandnotinanyothersector.
IftherewasnoeraseoperationinprogressthenDQ2isadon'tcareandshouldbemasked.
DQ1=1:WritebufferaborterrorDQ0isRFUandshouldbetreatedasdon'tcare(masked)Duringwritetobufferabort(WBA)errorstatustheStatusRegisterwillshowthefollowing:SR[7]=1;ValidstatusdisplayedSR[6]=X;MayormaynotbeerasesuspendedduringtheWBAerrorstatusSR[5]=0;ErasesuccessfulSR[4]=1;ProgrammingrelatederrorSR[3]=1;WritebufferabortSR[2]=0;NoPrograminsuspensionSR[1]=0;SectornotlockedduringoperationSR[0]=X;RFU,treatasdon'tcare(masked)WhentheWBAerrorstatusisdetected,itisnecessarytocleartheerrorstatusinordertoreturntonormaloperation,withRY/BY#HIGH,readyforanewreadorcommandwrite.
Theerrorstatuscanbeclearedanddevicereturnedtonormaloperationbywriting:WriteBufferAbortResetcommandStatusRegisterClearcommandCommandsthatareacceptedduringwritetobufferabort(WBA)errorstatusare:StatusRegisterReadReadsthestatusregisterandreturnstoWBAbusystateWriteBufferAbortResetcommandStatusRegisterClearcommandDocumentNumber:002-00247Rev.
*LPage46of109S29GL01GT/S29GL512T5.
7EmbeddedAlgorithmPerformanceTableTheJointElectronDeviceEngineeringCouncil(JEDEC)standardJESD22-A117definestheproceduralrequirementsforperformingvalidenduranceandretentiontestsbasedonaqualificationspecification.
Thismethodologyisintendedtodeterminetheabilityofaflashdevicetosustainrepeateddatachangeswithoutfailure(program/eraseendurance)andtoretaindatafortheexpectedlife(dataretention).
EnduranceandretentionqualificationspecificationsarespecifiedinJESD47ormaybedevelopedusingknowledge-basedmethodsasinJESD94.
Table16.
EmbeddedAlgorithmCharacteristics(40°Cto+85°C)ParameterMinTyp[34]Max[35]UnitCommentsSectorEraseTime128KB5353500msIncludespre-programmingpriortoerasure[37]ChipEraseGL512T2741792[33]sGL01GT5483584[33]sSingleWordProgrammingTime[33]160750sBufferProgrammingTime2-byte[33]160750s32-byte[33]19575064-byte[33]219750128-byte[33]258750256-byte[33]327750512-byte[36]451750EffectiveWriteBufferProgramOperationperWord512-byte1.
76sSectorProgrammingTime128kB(fullBufferProgramming)115.
4192msSeeNote[38].
EraseSuspendLatency(tESL)40sProgramSuspendLatency(tPSL)40sEraseResumetonextEraseSuspend(tERS)100sMinimumof60sbuttypicalperiodsareneededforErasetoprogresstocompletion.
ProgramResumetonextProgramSuspend(tPRS)100sMinimumof60sbuttypicalperiodsareneededforProgramtoprogresstocompletion.
EvaluateEraseStatus(tEES)2530sBlankCheck6.
28.
5msNOP(NumberofProgram-operations,perLine)256Notes33.
Not100%tested.
34.
Typicalprogramanderasetimesassumethefollowingconditions:25°C,3.
0VVCC,10,000cycle,andarandomdatapattern.
35.
Effectivewritebufferspecificationisbasedupona512-bytewritebufferoperation.
36.
512-byteloadisnotsupportedinx8mode.
37.
Inthepre-programmingstepoftheEmbeddedErasealgorithm,allwordsareprogrammedto0000hbeforeSectorandChiperasure.
38.
System-leveloverheadisthetimerequiredtoexecutethebus-cyclesequencefortheprogramcommand.
SeeTable21onpage50forfurtherinformationoncommanddefinitions.
DocumentNumber:002-00247Rev.
*LPage47of109S29GL01GT/S29GL512TTable17.
EmbeddedAlgorithmCharacteristics(40°Cto+105°C)ParameterMinTyp[40]Max[41]UnitCommentsSectorEraseTime128KB5353500msIncludespre-programmingpriortoerasure(Note43)ChipEraseGL512T2741792[39]sGL01GT5483584[39]SingleWordProgrammingTime[39]1601050sBufferProgrammingTime2-byte[39]1601050s32-byte[39]195105064-byte[39]219.
1050128-byte[39]2581050256-byte[39]3271050512-byte[39]4511050EffectiveWriteBufferProgramOperationperWord512-byte1.
76sSectorProgrammingTime128kB(fullBufferProgramming)115.
4269msSeeNote[44].
EraseSuspendLatency(tESL)50sProgramSuspendLatency(tPSL)50sEraseResumetonextEraseSuspend(tERS)100sMinimumof60nsbuttypicalperiodsareneededforErasetoprogresstocompletion.
ProgramResumetonextProgramSuspend(tPRS)100sMinimumof60nsbuttypicalperiodsareneededforProgramtoprogresstocompletion.
EvaluateEraseStatus(tEES)2530sBlankCheck7.
69.
0msNOP(NumberofProgram-operations,perLine)1per16wordNotes39.
Not100%tested.
40.
Typicalprogramanderasetimesassumethefollowingconditions:25°C,3.
0VVCC,10,000cycle,andarandomdatapattern.
41.
Effectivewritebufferspecificationisbasedupona512-bytewritebufferoperation.
42.
512-byteloadisnotsupportedinx8mode.
43.
Inthepre-programmingstepoftheEmbeddedErasealgorithm,allwordsareprogrammedto0000hbeforeSectorandChiperasure.
44.
System-leveloverheadisthetimerequiredtoexecutethebus-cyclesequencefortheprogramcommand.
SeeTable21onpage50forfurtherinformationoncommanddefinitions.
DocumentNumber:002-00247Rev.
*LPage48of109S29GL01GT/S29GL512TTable18.
EmbeddedAlgorithmCharacteristics(40°Cto+125°C)ParameterMinTyp[46]Max[47]UnitCommentsSectorEraseTime128KB5353500msChipEraseGL512T2741792[45]sIncludespre-programmingpriortoerasure[49]GL01GT5483584[45]μsSingleWordProgrammingTime[45]1601050μsBufferProgrammingTime2-byte[45]160105032-byte[45]195105064-byte[45]2191050128-byte[45]2581050256-byte[45]3271050512-byte[45]4511050EffectiveWriteBufferProgramOperationperWord512-byte1.
76μsSectorProgrammingTime128kB(fullBufferProgramming)115.
4269msSeeNote[50].
EraseSuspendLatency(tESL)50μsProgramSuspendLatency(tPSL)50μsEraseResumetonextEraseSuspend(tERS)100μsMinimumof60nsbut≥typicalperiodsareneededforErasetoprogresstocompletion.
ProgramResumetonextProgramSuspend(tPRS)100μsMinimumof60nsbut≥typicalperiodsareneededforProgramtoprogresstocompletion.
EvaluateEraseStatus(tEES)2530μsBlankCheck7.
69.
0msNOP(NumberofProgram-operations,perLine)1per16wordNotes45.
Not100%tested.
46.
Typicalprogramanderasetimesassumethefollowingconditions:25°C,3.
0VVCC,1,000cycle,andarandomdatapattern.
47.
Effectivewritebufferspecificationisbasedupona512-bytewritebufferoperation.
48.
512-byteloadisnotsupportedinx8mode.
49.
Inthepre-programmingstepoftheEmbeddedErasealgorithm,allwordsareprogrammedto0000hbeforeSectorandChiperasure.
50.
System-leveloverheadisthetimerequiredtoexecutethebus-cyclesequencefortheprogramcommand.
SeeTable21onpage50forfurtherinformationoncommanddefinitions.
DocumentNumber:002-00247Rev.
*LPage49of109S29GL01GT/S29GL512T6.
DataIntegrity6.
1EraseEndurance6.
2DataRetentionContactCypressSalesoranFAErepresentativeforadditionalinformationonthedataintegrity.
Anapplicationnoteisavailableatwww.
cypress.
com/cypressappnotes.
Table19.
EraseEnduranceParameterMinimumUnitProgram/ErasecyclespermainFlasharraysectors100KP/EcycleProgram/ErasecyclesperPPBarrayornon-volatileregisterarray100KP/EcycleNote51.
Eachwritecommandtoanon-volatileregistercausesaP/Ecycleontheentirenon-volatileregisterarray.
OTPbitsandregistersinternallyresideinaseparatearraythatisnotP/Ecycled.
Table20.
DataRetentionParameterTestConditionsMinimumTimeUnitDataRetentionTime1KProgram/EraseCycles20Years10KProgram/EraseCycles2Years100KProgram/EraseCycles0.
2YearsDocumentNumber:002-00247Rev.
*LPage50of109S29GL01GT/S29GL512T7.
SoftwareInterfaceReference7.
1CommandSummaryTable21.
CommandDefinitionsx16CommandSequence[52]CyclesBusCycles[53,54,55,56]FirstSecondThirdFourthFifthSixthSeventhAddrDataAddrDataAddrDataAddrDataAddrDataAddrDataAddrDataRead[57]1RARDReset/ASOExit[58,68]1XXXF0StatusRegisterRead255570XXXRDStatusRegisterClear155571WordProgram4555AA2AA55555A0PAPDWritetoBuffer6555AA2AA55SA25SAWCWBLPDWBLPDProgramBuffertoFlash(confirm)1SA29Write-to-Buffer-AbortReset[64]3555AA2AA55555F0UnlockBypassEnter3555AA2AA5555520Program[60]2XXXA0PAPDWrite-to-Buffer[60]4SA25SAWCWBLPDWBLPDProgramBuffertoFlash(confirm)1SA29Write-to-Buffer-AbortReset[64]3555AA2AA55555F0SectorErase[60]2XXX80SA30ChipErase[60]2XXX80XXX10CommandSetExit[61]2XXX90XXX00ChipErase6555AA2AA5555580555AA2AA5555510SectorErase[71]6555AA2AA5555580555AA2AA55SA30EraseSuspend/ProgramSuspendLegacyMethod[62]1XXXB0EraseSuspendEnhancedMethodEraseResume/ProgramResumeLegacyMethod[63]1XXX30EraseResumeEnhancedMethodProgramSuspendEnhancedMethod1XXX51ProgramResumeEnhancedMethod1XXX50EvaluateEraseState1(SA)55535BlankCheck1(SA)55533CFIEnter[59]1(SA)5598ContinuityCheck75557155570XXRD2AAAA55FF0015555AA00FF55570XXRDID-CFI(Autoselect)ASOID(Autoselect)Entry3555AA2AA5555590CFIEnter[59]15598ID-CFIRead1RARDCFIExit1XXXFFReset/ASOExit[58,69]1XXXF0DocumentNumber:002-00247Rev.
*LPage51of109S29GL01GT/S29GL512TSecureSiliconRegionCommandDefinitionsSecureSiliconRegion(SSR)ASOSSREntry3555AA2AA55(SA)55588Read[57]1RARDWordProgram4555AA2AA55555A0PAPDWritetoBuffer6555AA2AA55SA25SAWCWBLPDWBLPDProgramBuffertoFlash(confirm)1SA29Write-to-Buffer-AbortReset[64]3555AA2AA55555F0SSRExit[64]4555AA2AA5555590XX0Reset/ASOExit[58,69]1XXXF0LockRegisterCommandSetDefinitionsLockRegisterASOLockRegisterEntry3555AA2AA5555540Program[68]2XXXA0XXXPDRead[68]10RDCommandSetExit[65,69]2XXX90XXX0Reset/ASOExit[58,69]1XXXF0PasswordProtectionCommandSetDefinitionsPasswordASOPasswordASOEntry3555AA2AA5555560Program[67]2XXXA0PWAxPWDxRead[68]40PWD01PWD12PWD23PWD3Unlock[68]7025030PWD01PWD12PWD23PWD3029CommandSetExit[65,69]2XXX90XXX0Reset/ASOExit[58,69]1XXXF0Non-VolatileSectorProtectionCommandSetDefinitionsPPB(Non-VolatileSectorProtection)PPBEntry3555AA2AA55555C0PPBProgram[70]2XXXA0SA0AllPPBErase[70]2XXX80030PPBRead[70]1SARD(0)CommandSetExit[65,69]2XXX90XXX0Reset/ASOExit[58,69]1XXXF0GlobalNon-VolatileSectorProtectionFreezeCommandSetDefinitionsPPBLockBitPPBLockEntry3555AA2AA5555550PPBLockBitCleared2XXXA0XXX0PPBLockStatusRead[70]1XXXRD(0)CommandSetExit[65,69]2XXX90XXX0Reset/ASOExit[69]1XXXF0VolatileSectorProtectionCommandSetDefinitionsDYB(VolatileSectorProtection)ASODYBASOEntry3555AA2AA55555E0DYBSet[70]2XXXA0SA0DYBClear[70]2XXXA0SA1DYBStatusRead[70]1SARD(0)CommandSetExit[65,69]2XXX90XXX0Reset/ASOExit[69]1XXXF0Table21.
CommandDefinitionsx16(Continued)CommandSequence[52]CyclesBusCycles[53,54,55,56]FirstSecondThirdFourthFifthSixthSeventhAddrDataAddrDataAddrDataAddrDataAddrDataAddrDataAddrDataDocumentNumber:002-00247Rev.
*LPage52of109S29GL01GT/S29GL512TLegend:X=Don'tcare.
RA=Addressofthememorytoberead.
RD=DatareadfromlocationRAduringreadoperation.
PA=Addressofthememorylocationtobeprogrammed.
PD=DatatobeprogrammedatlocationPA.
SA=Addressofthesectorselected.
AddressbitsAmax-A16uniquelyselectanysector.
WBL=WriteBufferLocation.
TheaddressmustbewithinthesameLine.
WC=WordCountisthenumberofwritebufferlocationstoloadminus1.
PWAx=PPBPasswordaddressforword0=00h,word1=01h,word2=02h,andword3=03h.
SSR3Passwordaddressforword0=10h,word1=11h,word2=12h,andword3=13h.
PWDx=Passworddataword0,word1,word2,andword3.
Grayvs.
WhiteBox=Readvs.
WriteOperation.
Notes52.
SeeTable29onpage63fordescriptionofbusoperations.
53.
Allvaluesareinhexadecimal.
54.
Exceptforthefollowing,allbuscyclesarewritecycle:readcycleduringRead,ID/CFIRead(ManufacturingID/DeviceID),IndicatorBits,SecureSiliconRegionRead,SSRLockRead,and2ndcycleofStatusRegisterRead.
55.
DatabitsDQ15-DQ8aredon'tcareincommandsequences,exceptforRD,PD,WCandPWD.
56.
AddressbitsAmax-A11aredon'tcaresforunlockandcommandcycles,unlessSAorPArequired(AmaxistheHighestAddresspin).
57.
Nounlockorcommandcyclesrequiredwhenreadingarraydata.
58.
TheResetcommandisrequiredtoreturntoreadingarraydatawhendeviceisintheASOmode,orifDQ5goesHigh(whilethedeviceisprovidingstatusdata).
59.
Commandisvalidwhendeviceisreadytoreadarraydata.
60.
TheUnlock-BypasscommandisrequiredpriortotheUnlock-Bypass-Programandtheunlockbypasswritetobuffercommands.
61.
TheUnlock-Bypass-Resetcommandisrequiredtoreturntoreadingarraydatawhenthedeviceisintheunlockbypassmode.
62.
Thesystemcanreadandprogram/programsuspendinnon-erasingsectors,orentertheID-CFIASO,whenintheEraseSuspendmode.
TheEraseSuspendcommandisvalidonlyduringasectoreraseoperation.
63.
TheEraseResume/ProgramResumecommandisvalidonlyduringtheEraseSuspend/ProgramSuspendmodes.
64.
IssuethiscommandsequencetoreturntoReadStateafterdetectingdeviceisinaWrite-to-Buffer-Abortstate.
IMPORTANT:thefullcommandsequenceisrequiredifresettingoutofABORT.
65.
TheExitcommandreturnsthedevicetoreadingthearray.
66.
Thepasswordportioncanbeenteredorreadinanyorderaslongastheentire64-bitpasswordisenteredorread.
Addressesare10h-13hiftheSSR3isbeingaccessed.
67.
ForPWDx,onlyoneportionofthepasswordcanbeprogrammedpereachA0command.
Portionsofthepasswordmustbeprogrammedinsequentialorder(PWD0-PWD3).
68.
AllLockRegisterbitsareone-timeprogrammable.
Theprogramstate=0andtheerasestate=1.
Also,boththePersistentProtectionModeLockBitandthePasswordProtectionModeLockBitcannotbeprogrammedatthesametimeortheLockRegisterBitsProgramoperationhaltsandreturnsthedevicetoReadState.
LockRegisterbitsthatarereservedforfutureuseareundefinedandmaybe0'sor1's.
69.
IfanyoftheEntrycommandswasissued,anExitcommandmustbeissuedtoresetthedeviceintoReadState.
70.
ProtectedState=00h,UnprotectedState=01h.
ThesectoraddressforDYBset,DYBclear,orPPBProgramcommandmaybeanylocationwithinthesector-thelowerorderbitsofthesectoraddressaredon'tcare.
71.
SeeSection5.
4.
7.
2SectorEraseonpage30fordescriptionofMulti-SectorErase.
CommandSetDefinitionsECCECCASOECCASOEntry3555AA2AA5555575ECCStatusRead1RARDCommandSetExit[65,69]1XXXF0Table21.
CommandDefinitionsx16(Continued)CommandSequence[52]CyclesBusCycles[53,54,55,56]FirstSecondThirdFourthFifthSixthSeventhAddrDataAddrDataAddrDataAddrDataAddrDataAddrDataAddrDataDocumentNumber:002-00247Rev.
*LPage53of109S29GL01GT/S29GL512TTable22.
CommandDefinitionsx8CommandSequence[72]CyclesBusCycles[73,74,75,76]FirstSecondThirdFourthFifthSixthSeventhAddrDataAddrDataAddrDataAddrDataAddrDataAddrDataAddrDataRead[76]1RARDReset/ASOExit[77,88]1XXXF0StatusRegisterRead2AAA70XXXRDStatusRegisterClear1AAA71WordProgram4AAAAA55555AAAA0PAPDWritetoBuffer[90]6AAAAA55555SA25SAWCWBLPDWBLPDProgramBuffertoFlash(confirm)1SA29Write-to-Buffer-AbortReset[83]3AAAAA55555AAAF0UnlockBypassEnter3AAAAA55555AAA20Program[79]2XXXA0PAPDWrite-to-Buffer[79]4SA25SAWCWBLPDWBLPDProgramBuffertoFlash(confirm)[79]1SA29Write-to-Buffer-AbortReset[83]3AAAAA55555AAAF0SectorErase[79]2XXX80SA30ChipErase[79]2XXX80XXX10CommandSetExit[80]2XXX90XXX00ChipErase6AAAAA55555AAA80AAAAA55555AAA10SectorErase[90]6AAAAA55555AAA80AAAAA55555SA30EraseSuspend/ProgramSuspendLegacyMethod[81]1XXXB0EraseSuspendEnhancedMethodEraseResume/ProgramResumeLegacyMethod[82]1XXX30EraseResumeEnhancedMethodProgramSuspendEnhancedMethod1XXX51ProgramResumeEnhancedMethod1XXX50EvaluateEraseState1(SA)AAA35BlankCheck1(SA)AAA33CFIEnter[78]1(SA)AA98ContinuityCheck7AAA71AAA70XXRD55554ABFF2AAAB5400AAA70XXRDID-CFI(Autoselect)ASOID(Autoselect)Entry3AAAAA55555AAA90CFIEnter[78]1AA98ID-CFIRead1RARDCFIExit1XXXFFReset/ASOExit[77,88]1XXXF0DocumentNumber:002-00247Rev.
*LPage54of109S29GL01GT/S29GL512TSecureSiliconRegionCommandDefinitionsSecureSiliconRegion(SSR)ASOSSREntry3AAAAA55555(SA)AAA88Read[76]1RARDWordProgram4AAAAA55555AAAA0PAPDWritetoBuffer[90]6AAAAA55555SA25SAWCWBLPDWBLPDProgramBuffertoFlash(confirm)1SA29Write-to-Buffer-AbortReset[83]3AAAAA55555AAAF0SSRExit[83]4AAAAA55555AAA90XX0Reset/ASOExit[77,88]1XXXF0LockRegisterCommandSetDefinitionsLockRegisterASOLockRegisterEntry3AAAAA55555AAA40Program[87]2XXXA0XXXPDRead[87]10RDCommandSetExit[84,88]2XXX90XXX0Reset/ASOExit[77,88]1XXXF0PasswordProtectionCommandSetDefinitionsPasswordASOPasswordASOEntry3AAAAA55555AAA60Program[86]2XXXA0PWAxPWDxRead[85]80PWD01PWD12PWD23PWD34PWD45PWD56PWD67PWD7Unlock[85]11025030PWD01PWD12PWD23PWD34PWD45PWD56PWD67PWD7029CommandSetExit[84,88]2XXX90XXX0Reset/ASOExit[77,88]1XXXF0Non-VolatileSectorProtectionCommandSetDefinitionsPPB(Non-VolatileSectorProtection)PPBEntry3AAAAA55555AAAC0PPBProgram[89]2XXXA0SA0AllPPBErase[89]2XXX80030PPBRead[89]1SARD(0)CommandSetExit[84,88]2XXX90XXX0Reset/ASOExit[77,88]1XXXF0GlobalNon-VolatileSectorProtectionFreezeCommandSetDefinitionsPPBLockBitPPBLockEntry3AAAAA55555AAA50PPBLockBitCleared2XXXA0XXX0PPBLockStatusRead[89]1XXXRD(0)CommandSetExit[84,88]2XXX90XXX0Reset/ASOExit[88]1XXXF0Table22.
CommandDefinitionsx8(Continued)CommandSequence[72]CyclesBusCycles[73,74,75,76]FirstSecondThirdFourthFifthSixthSeventhAddrDataAddrDataAddrDataAddrDataAddrDataAddrDataAddrDataDocumentNumber:002-00247Rev.
*LPage55of109S29GL01GT/S29GL512TLegend:X=Don'tcare.
RA=Addressofthememorytoberead.
RD=DatareadfromlocationRAduringreadoperation.
PA=Addressofthememorylocationtobeprogrammed.
PD=DatatobeprogrammedatlocationPA.
SA=Addressofthesectorselected.
AddressbitsAmax-A16uniquelyselectanysector.
WBL=WriteBufferLocation.
TheaddressmustbewithinthesameLine.
WC=WordCountisthenumberofwritebufferlocationstoloadminus1.
PWAx=PPBPasswordaddressforbyte0=00h,byte1=01h,byte2=02h,byte3=03h,byte04=04h,byte5=05h,byte6=06h,andbyte7=07h.
SSR3Passwordaddressforbyte0=20h,byte1=21h,byte2=22h,byte3=23h,byte04=24h,byte5=25h,byte6=26h,andbyte7=27h.
PWDx=Passworddatabyte0,byte1,byte2,byte3,byte4,byte5,byte6,andbyte7Grayvs.
WhiteBox=Readvs.
WriteOperation.
Notes72.
SeeTable29,InterfaceStatesonpage63fordescriptionofbusoperations.
73.
Allvaluesareinhexadecimal.
74.
Exceptforthefollowing,allbuscyclesarewritecycle:readcycleduringRead,ID/CFIRead(ManufacturingID/DeviceID),IndicatorBits,SecureSiliconRegionRead,SSRLockRead,and2ndcycleofStatusRegisterRead.
75.
AddressbitsAmax-A11aredon'tcaresforunlockandcommandcycles,unlessSAorPArequired(AmaxistheHighestAddresspin).
76.
Nounlockorcommandcyclesrequiredwhenreadingarraydata.
77.
TheResetcommandisrequiredtoreturntoreadingarraydatawhendeviceisintheASOmode,orifDQ5goesHigh(whilethedeviceisprovidingstatusdata).
78.
Commandisvalidwhendeviceisreadytoreadarraydata.
79.
TheUnlock-BypasscommandisrequiredpriortotheUnlock-Bypass-Programcommandandtheunlockbypasswritetobuffercommands.
80.
TheUnlock-Bypass-Resetcommandisrequiredtoreturntoreadingarraydatawhenthedeviceisintheunlockbypassmode.
81.
Thesystemcanreadandprogram/programsuspendinnon-erasingsectors,orentertheID-CFIASO,whenintheEraseSuspendmode.
TheEraseSuspendcommandisvalidonlyduringasectoreraseoperation.
82.
TheEraseResume/ProgramResumecommandisvalidonlyduringtheEraseSuspend/ProgramSuspendmodes.
83.
IssuethiscommandsequencetoreturntoReadStateafterdetectingdeviceisinaWrite-to-Buffer-Abortstate.
IMPORTANT:thefullcommandsequenceisrequiredifresettingoutofABORT.
84.
TheExitcommandreturnsthedevicetoreadingthearray.
85.
Thepasswordportioncanbeenteredorreadinanyorderaslongastheentire64-bitpasswordisenteredorread.
Addressesare20h-27hiftheSSR3isbeingaccessed.
86.
ForPWDx,onlyoneportionofthepasswordcanbeprogrammedpereachA0command.
Portionsofthepasswordmustbeprogrammedinsequentialorder(PWD0-PWD7).
87.
AllLockRegisterbitsareone-timeprogrammable.
Theprogramstate=0andtheerasestate=1.
Also,boththePersistentProtectionModeLockBitandthePasswordProtectionModeLockBitcannotbeprogrammedatthesametimeortheLockRegisterBitsProgramoperationabortsandreturnsthedevicetoReadState.
LockRegisterbitsthatarereservedforfutureuseareundefinedandmaybe0'sor1's.
88.
IfanyoftheEntrycommandswasissued,anExitcommandmustbeissuedtoresetthedeviceintoReadState.
89.
ProtectedState=00h,UnprotectedState=01h.
ThesectoraddressforDYBset,DYBclear,orPPBProgramcommandmaybeanylocationwithinthesector-thelowerorderbitsofthesectoraddressaredon'tcare.
90.
SeeSection5.
4.
7.
2SectorEraseonpage30fordescriptionofMulti-SectorErase.
91.
Inx8mode,theWCrepresents2x8WBL/PDcycles(e.
g.
ifWC=0,then5thbuscyclewouldloaddatatolowerbyteaddressA-1=lowand6thbuscyclewouldloaddatatoupperbyteaddressA-1=high).
VolatileSectorProtectionCommandSetDefinitionsDYB(VolatileSectorProtection)ASODYBASOEntry3AAAAA55555AAAE0DYBSet[89]2XXXA0SA0DYBClear[89]2XXXA0SA1DYBStatusRead[89]1SARD(0)CommandSetExit[84,88]2XXX90XXX0Reset/ASOExit[88]1XXXF0ECCCommandSetDefinitionsECCASOECCASOEntry3AAAAA55555AAA75ECCStatusRead1RARDCommandSetExit[84,88]1XXXF0Table22.
CommandDefinitionsx8(Continued)CommandSequence[72]CyclesBusCycles[73,74,75,76]FirstSecondThirdFourthFifthSixthSeventhAddrDataAddrDataAddrDataAddrDataAddrDataAddrDataAddrDataDocumentNumber:002-00247Rev.
*LPage56of109S29GL01GT/S29GL512T7.
2DeviceIDandCommonFlashInterface(ID-CFI)ASOMapTheDeviceIDportionoftheASO(wordlocations0hto0Fh)providesmanufacturerID,deviceID,SectorProtectionState,andbasicfeaturesetinformationforthedevice.
Theaccesstimetoreadlocation02hisalwaystACCandareadofthislocationrequiresCE#togoHIGHbeforethereadandreturnLowtoinitiatetheread(asynchronousreadaccess).
Pagemodereadbetweenlocation02handotherIDlocationsisnotsupported.
PagemodereadbetweenIDlocationsotherthan02hissupported.
Inx8mode,addressA-1isignoredandthelower8bitsofdatawillbereturnedforbothaddress,inCFIonly.
Whileinx8onlyCFIoronlyAutoselectdatacanberead.
Inx16mode,abletoreadbothmemoriesfromeithercommand.
Foradditionalinformation,seeSection5.
4.
9.
1ID-CFIASOonpage33.
Table23.
ID(Autoselect)AddressMapDescriptionAddress(x16)Address(x8)ReadDataManufactureID(SA)+0000h(SA)+0000h0001hDeviceID(SA)+0001h(SA)+0002h227EhProtectionVerification(SA)+0002h(SA)+0004hSectorProtectionState(1=Sectorprotected,0=Sectorunprotected).
ToreadadifferentSAprotectionstate,onlyanewSAneedstobegiven.
IndicatorBits(SA)+0003h(SA)+0006hDQ15-DQ08=1(Reserved)DQ7-FactoryLockedSecureSiliconRegion1=Locked,0=NotLockedDQ6-CustomerLockedSecureSiliconRegion1=Locked0=NotLockedDQ5=1(Reserved)DQ4-WP#Protects0=LowestaddressSector1=HighestaddressSectorDQ3-DQ0=1(Reserved)RFU(SA)+0004h(SA)+0008hReserved(SA)+0005h(SA)+000AhReserved(SA)+0006h(SA)+000ChReserved(SA)+0007h(SA)+000EhReserved(SA)+0008h(SA)+0010hReserved(SA)+0009h(SA)+0012hReserved(SA)+000Ah(SA)+0014hReserved(SA)+000Bh(SA)+0016hReservedLowerSoftwareBits(SA)+000Ch(SA)+0018hBit0-StatusRegisterSupport1=StatusRegisterSupported0=StatusRegisternotsupportedBit1-DQpollingSupport1=DQbitspollingsupported0=DQbitspollingnotsupportedBit3-2-CommandSetSupport11=reserved10=reserved01=ReducedCommandSet00=ClassicCommandsetBits4-15-Reserved=0UpperSoftwareBits(SA)+000Dh(SA)+001AhReservedDeviceID(SA)+000Eh(SA)+001Ch2228h=1Gb2223h=512MbDeviceID(SA)+000Fh(SA)+001Eh2201hDocumentNumber:002-00247Rev.
*LPage57of109S29GL01GT/S29GL512TTable24.
CFIQueryIdentificationStringWordAddressByteAddressDataDescription(SA)+0010h(SA)+0011h(SA)+0012h(SA)+0020h(SA)+0022h(SA)+0024h0051h0052h0059hQueryUniqueASCIIstring"QRY"(SA)+0013h(SA)+0014h(SA)+0026h(SA)+0028h0002h0000hPrimaryOEMCommandSet(SA)+0015h(SA)+0016h(SA)+002Ah(SA)+002Ch0040h0000hAddressforPrimaryExtendedTable(SA)+0017h(SA)+0018h(SA)+002Eh(SA)+0030h0000h0000hAlternateOEMCommandSet(00h=noneexists)(SA)+0019h(SA)+001Ah(SA)+0032h(SA)+0034h0000h0000hAddressforAlternateOEMExtendedTable(00h=noneexists)Table25.
CFISystemInterfaceStringWordAddressByteAddressDataDescription(SA)+001Bh(SA)+0036h0027hVCCMin.
(erase/program)(D7-D4:volts,D3-D0:100mV)(SA)+001Ch(SA)+0038h0036hVCCMax.
(erase/program)(D7-D4:volts,D3-D0:100mV)(SA)+001Dh(SA)+003Ah0000hVPPMin.
voltage(00h=noVPPpinpresent)(SA)+001Eh(SA)+003Ch0000hVPPMax.
voltage(00h=noVPPpinpresent)(SA)+001Fh(SA)+003Eh0008hTypicaltimeoutpersinglewordwrite2Ns(SA)+0020h(SA)+0040h0009hTypicaltimeoutformaxmulti-byteprogram,2Ns(00h=notsupported)(SA)+0021h(SA)+0042h000AhTypicaltimeoutperindividualblockerase2Nms(SA)+0022h(SA)+0044h0014h(1Gb)0013h(512Mb)Typicaltimeoutforfullchiperase2Nms(00h=notsupported)(SA)+0023h(SA)+0046h0002h(85°C)0003h(105°C)Max.
timeoutforsinglewordwrite2Ntimestypical(SA)+0024h(SA)+0048h0001h(85°C)0002h(105°C)Max.
timeoutforbufferwrite2Ntimestypical(SA)+0025h(SA)+004Ah0002hMax.
timeoutperindividualblockerase2Ntimestypical(SA)+0026h(SA)+004Ch0002hMax.
timeoutforfullchiperase2Ntimestypical(00h=notsupported)DocumentNumber:002-00247Rev.
*LPage58of109S29GL01GT/S29GL512TTable26.
CFIDeviceGeometryDefinitionWordAddressByteAddressDataDescription(SA)+0027h(SA)+004Eh001Bh(1Gb)001Ah(512Mb)DeviceSize=2Nbyte;(SA)+0028h(SA)+0050h0002hFlashDeviceInterfaceDescription0=x8-only,1=x16-only,2=x8/x16capable(SA)+0029h(SA)+0052h0000h(SA)+002Ah(SA)+0054h0009hMax.
numberofbyteinmulti-bytewrite=2N(00=notsupported)NoteForx16(WORD)modeonly.
(SA)+002Bh(SA)+0056h0000h(SA)+002Ch(SA)+0058h0001hNumberofEraseBlockRegionswithindevice1=UniformDevice,2=BootDevice(SA)+002Dh(SA)+005Ah00XXhEraseBlockRegion1Information(refertoJEDECJESD68-01orJEP137specifications)00FFh,0003h,0000h,0002h=1Gb00FFh,0001h,0000h,0002h=512Mb(SA)+002Eh(SA)+005Ch000Xh(SA)+002Fh(SA)+005Eh0000h(SA)+0030h(SA)+0060h000Xh(SA)+0031h(SA)+0062h0000hEraseBlockRegion2Information(refertoCFIpublication100)(SA)+0032h(SA)+0064h0000h(SA)+0033h(SA)+0066h0000h(SA)+0034h(SA)+0068h0000h(SA)+0035h(SA)+006Ah0000hEraseBlockRegion3Information(refertoCFIpublication100)(SA)+0036h(SA)+006Ch0000h(SA)+0037h(SA)+006Eh0000h(SA)+0038h(SA)+0070h0000h(SA)+0039h(SA)+0072h0000hEraseBlockRegion4Information(refertoCFIpublication100)(SA)+003Ah(SA)+0074h0000h(SA)+003Bh(SA)+0076h0000h(SA)+003Ch(SA)+0078h0000h(SA)+003Dh(SA)+007AhFFFFhReserved(SA)+003Eh(SA)+007ChFFFFh(SA)+003Fh(SA)+007EhFFFFhDocumentNumber:002-00247Rev.
*LPage59of109S29GL01GT/S29GL512TTable27.
CFIPrimaryVendor-SpecificExtendedQueryWordAddressByteAddressDataDescription(SA)+0040h(SA)+0080h0050hQuery-uniqueASCIIstring"PRI"(SA)+0041h(SA)+0082h0052h(SA)+0042h(SA)+0084h0049h(SA)+0043h(SA)+0086h0031hMajorversionnumber,ASCII(SA)+0044h(SA)+0088h0033h(CFI1.
3)0035H(CFI1.
5)Minorversionnumber,ASCII0033h=CFIMinorVersion3(ModelNumbers03,04,V3,andV4)0035h=CFIMinorVersion5(ModelNumberis01,02,V1,andV2)(SA)+0045h(SA)+008Ah0024hAddressSensitiveUnlock(Bits1-0)00b=Required01b=NotRequiredProcessTechnology(Bits5-2)0000b=0.
23mFloatingGate0001b=0.
17mFloatingGate0010b=0.
23mMirrorBit0011b=0.
13mFloatingGate0100b=0.
11mMirrorBit0101b=0.
09mMirrorBit0110b=0.
09mFloatingGate0111b=0.
065mMirrorBitEclipse1000b=0.
065mMirrorBit1001b=0.
045mMirrorBit(SA)+0046h(SA)+008Ch0002hEraseSuspend0=NotSupported1=ReadOnly2=ReadandWrite(SA)+0047h(SA)+008Eh0001hSectorProtect00=NotSupportedX=Numberofsectorsinsmallestgroup(SA)+0048h(SA)+0090h0000hTemporarySectorUnprotect00=NotSupported01=Supported(SA)+0049h(SA)+0092h0008hSectorProtect/UnprotectScheme04=HighVoltageMethod05=SoftwareCommandLockingMethod08=AdvancedSectorProtectionMethod(SA)+004Ah(SA)+0094h0000hSimultaneousOperation00=NotSupportedX=Numberofbanks(SA)+004Bh(SA)+0096h0000hBurstModeType00=NotSupported01=Supported(SA)+004Ch(SA)+0098h0003hPageModeType00=NotSupported01=4WordPage02=8WordPage03=16WordPage(SA)+004Dh(SA)+009Ah00B5hACC(Acceleration)SupplyMinimum00=NotSupportedD7-D4:VoltD3-D0:100mVDocumentNumber:002-00247Rev.
*LPage60of109S29GL01GT/S29GL512T(SA)+004Eh(SA)+009Ch00C5hACC(Acceleration)SupplyMaximum00=NotSupportedD7-D4:VoltD3-D0:100mV(SA)+004Fh(SA)+009Eh0004h(Bottom)0005h(Top)WP#Protection00h=FlashdevicewithoutWPProtect(NoBoot)01h=Eight8kBSectorsatTOPandBottomwithWP(DualBoot)02h=BottomBootDevicewithWPProtect(BottomBoot)03h=TopBootDevicewithWPProtect(TopBoot)04h=Uniform,BottomWPProtect(UniformBottomBoot)05h=Uniform,TopWPProtect(UniformTopBoot)06h=WPProtectforallsectors07h=Uniform,TopandBottomWPProtect(SA)+0050h(SA)+00A0h0001hProgramSuspend00=NotSupported01=SupportedBelowQueriesOnlyAvailableforCFIVersion1.
5(SA)+0051h(SA)+00A2h0001hUnlockBypass00=NotSupported01=Supported(SA)+0052h(SA)+00A4h0009hSecuredSiliconSector(CustomerOTPArea)Size2N(bytes)(SA)+0053h(SA)+00A6h008FhSoftwareFeaturesbit0:statusregisterpolling(1=supported,0=notsupported)bit1:DQpolling(1=supported,0=notsupported)bit2:newprogramsuspend/resumecommands(1=supported,0=notsupported)bit3:wordprogramming(1=supported,0=notsupported)bit4:bit-fieldprogramming(1=supported,0=notsupported)bit5:autodetectprogramming(1=supported,0=notsupported)bit6:RFUbit7:multiplewritesperLine(1=supported,0=notsupported)(SA)+0054h(SA)+00A8h0005hPageSize=2Nbytes(SA)+0055h(SA)+00AAh0006hEraseSuspendTimeoutMaximum1.
8V.
108.
Duringpower-uptherearespikesofcurrentdemand,thesystemneedstobeabletosupplythiscurrenttoinsurethepartinitializescorrectly.
109.
Ifanembeddedoperationisinprogressatthestartofreset,thecurrentconsumptionwillremainattheembeddedoperationspecificationuntiltheembeddedoperationisstoppedbythereset.
Ifnoembeddedoperationisinprogresswhenresetisstarted,orfollowingthestoppingofanembeddedoperation,ICC5willbedrawnduringtheremainderoftRPH.
AftertheendoftRPHthedevicewillgotostandbymodeuntilthenextreadorwrite.
110.
Therecommendedpull-upresistorforRY/BY#outputis5kto10kohms.
DocumentNumber:002-00247Rev.
*LPage71of109S29GL01GT/S29GL512TTable34.
DCCharacteristics(40°Cto+105°C)ParameterDescriptionTestConditionsMinTyp[112]MaxUnitILIInputLoadCurrentVIN=VSStoVCC,VCC=VCCmaxAllothers±0.
02±1.
0AWP#,BYTE#±0.
5±2.
0ILOOutputLeakageCurrentVOUT=VSStoVCC,VCC=VCCmax±0.
02±1.
0AICC1VCCActiveReadCurrentCE#=VIL,OE#=VIH,Addressswitching@5MHz,VCC=VCCmax5560mAICC2VCCIntra-PageReadCurrentCE#=VIL,OE#=VIH,Addressswitching@33MHz,VCC=VCCmax925mAICC3VCCActiveErase/ProgramCurrent[111,112]CE#=VIL,OE#=VIH,VCC=VCCmax45100mAICC4VCCStandbyCurrentCE#,RESET#,OE#=VIH,VIH=VIOVIL=VSS,VCC=VCCmax70200AICC5VCCResetCurrent[112,117]CE#=VIH,RESET#=VIL,VCC=VCCmax1020mAICC6AutomaticSleepMode[113]VIH=VIO,VIL=VSSVCC=VCCmax,tACC+30ns36mAVIH=VIO,VIL=VSS,VCC=VCCmax,tASSB100200AICC7VCCCurrentduringpowerup[112,116]RESET#=VIO,CE#=VIO,OE#=VIO,VCC=VCCmax,5380mAVILInputLowVoltage[114]–0.
50.
3xVIOVVIHInputHighVoltage[114]0.
7xVIOVIO+0.
4VVHHVoltageforACCProgramAccelerationVCC=2.
7-3.
6V11.
512.
5VVOLOutputLowVoltage[114,118]IOL=100AforDQ15-DQ0;IOL=2mAforRY/BY#0.
15xVIOVVOHOutputHighVoltage[114]IOH=100A0.
85xVIOVVLKOLowVCCLock-OutVoltage[112]2.
252.
5VVRSTLowVCCPoweronResetVoltage[112]1.
0VNotes111.
ICICCactivewhileEmbeddedAlgorithmisinprogress.
112.
Not100%tested.
113.
Automaticsleepmodeenablesthelowerpowermodewhenaddressesremainstableforthespecifieddesignatedtime.
114.
VIO=1.
65VtoVCCor2.
7VtoVCCdependingonthemodel.
115.
VCC=3VandVIO=3Vor1.
8V.
WhenVIOisat1.
8V,I/Opinscannotoperateat>1.
8V.
116.
Duringpower-uptherearespikesofcurrentdemand,thesystemneedstobeabletosupplythiscurrenttoinsurethepartinitializescorrectly.
117.
Ifanembeddedoperationisinprogressatthestartofreset,thecurrentconsumptionwillremainattheembeddedoperationspecificationuntiltheembeddedoperationisstoppedbythereset.
Ifnoembeddedoperationisinprogresswhenresetisstarted,orfollowingthestoppingofanembeddedoperation,ICC7willbedrawnduringtheremainderoftRPH.
AftertheendoftRPHthedevicewillgotostandbymodeuntilthenextreadorwrite.
118.
Therecommendedpull-upresistorforRY/BY#outputis5kto10kohms.
DocumentNumber:002-00247Rev.
*LPage72of109S29GL01GT/S29GL512TTable35.
DCCharacteristics(-40°Cto+125°C)ParameterDescriptionTestConditionsMinTyp[120]MaxUnitILIInputLoadCurrentVIN=VSStoVCC,VCC=VCCmaxAllothers±0.
02±1.
0μAWP#,BYTE#±0.
5±2.
0ILOOutputLeakageCurrentVOUT=VSStoVCC,VCC=VCCmax±0.
02±1.
0μAICC1VCCActiveReadCurrentCE#=VIL,OE#=VIH,Addressswitching@5MHz,VCC=VCCmax5560mAICC2VCCIntra-PageReadCurrentCE#=VIL,OE#=VIH,Addressswitching@33MHz,VCC=VCCmax925mAICC3VCCActiveErase/ProgramCurrent[119,120]CE#=VIL,OE#=VIH,VCC=VCCmax45100mAICC4VCCStandbyCurrentCE#,RESET#,OE#=VIH,VIH=VIO,VIL=VSS,VCC=VCCmax70215μAICC5VCCResetCurrent[120,125]CE#=VIH,RESET#=VIL,VCC=VCCmax1020mAICC6AutomaticSleepMode[121]VIH=VIO,VIL=VSS,VCC=VCCmax,tACC+30ns36mAVIH=VIO,VIL=VSS,VCC=VCCmax,tASSB100215μAICC7VCCCurrentduringpowerup[120,124]RESET#=VIO,CE#=VIO,OE#=VIO,VCC=VCCmax,5380mAVILInputLowVoltage[122]–0.
50.
3xVIOVVIHInputHighVoltage[122]0.
7*VIOVIO+0.
4VVHHVoltageforACCProgramAccelerationVCC=2.
7-3.
6V11.
512.
5VVOLOutputLowVoltage[122,126]IOL=100μAforDQ15–DQ0;IOL=2mAforRY/BY#0.
15xVIOVVOHOutputHighVoltage[122]IOH=100μA0.
85*VIOVVLKOLowVCCLock-OutVoltage[120]2.
252.
5VVRSTLowVCCPoweronResetVoltage[120]1.
0VNotes119.
ICCactivewhileEmbeddedAlgorithmisinprogress.
120.
Not100%tested.
121.
Automaticsleepmodeenablesthelowerpowermodewhenaddressesremainstableforthespecifieddesignatedtime.
122.
VIO=1.
65VtoVCCor2.
7VtoVCCdependingonthemodel.
123.
VCC=3VandVIO=3Vor1.
8V.
WhenVIOisat1.
8V,I/Opinscannotoperateat>1.
8V.
124.
Duringpower-uptherearespikesofcurrentdemand,thesystemneedstobeabletosupplythiscurrenttoinsurethepartinitializescorrectly.
125.
Ifanembeddedoperationisinprogressatthestartofreset,thecurrentconsumptionwillremainattheembeddedoperationspecificationuntiltheembeddedoperationisstoppedbythereset.
Ifnoembeddedoperationisinprogresswhenresetisstarted,orfollowingthestoppingofanembeddedoperation,ICC7willbedrawnduringtheremainderoftRPH.
AftertheendoftRPHthedevicewillgotostandbymodeuntilthenextreadorwrite.
126.
Therecommendedpull-upresistorforRY/BY#outputis5kto10kohms.
DocumentNumber:002-00247Rev.
*LPage73of109S29GL01GT/S29GL512T10.
6CapacitanceCharacteristicsTable36.
ConnectorCapacitanceforFBGA(LAA)PackageParameterSymbolParameterDescriptionTestSetupTypMaxUnitCINInputCapacitanceVIN=045.
5pFCOUTOutputCapacitanceVOUT=03.
55pFCIN2ControlPinCapacitanceVIN=048pFRY/BY#OutputCapacitanceVOUT=034pFRESET#ResetInputCapacitanceVIN=02123pFNotes127.
Sampled,not100%tested.
128.
TestconditionsTA=25°C,f=1.
0MHz.
Table37.
ConnectorCapacitanceforFBGA(LAE)PackageParameterSymbolParameterDescriptionTestSetupTypMaxUnitCINInputCapacitanceVIN=03.
55pFCOUTOutputCapacitanceVOUT=03.
55pFCIN2ControlPinCapacitanceVIN=03.
57pFRY/BY#OutputCapacitanceVOUT=02.
53.
5pFRESET#ResetInputCapacitanceVIN=02022pFNotes129.
Sampled,not100%tested.
130.
TestconditionsTA=25°C,f=1.
0MHz.
Table38.
ConnectorCapacitanceforFBGA(VBU)PackageParameterSymbolParameterDescriptionTestSetupTypMaxUnitCINInputCapacitanceVIN=03.
55pFCOUTOutputCapacitanceVOUT=03.
55pFCIN2ControlPinCapacitanceVIN=03.
57pFRY/BY#OutputCapacitanceVOUT=034pFRESET#ResetInputCapacitanceVIN=02022pFNotes131.
Sampled,not100%tested.
132.
TestconditionsTA=25°C,f=1.
0MHz.
Table39.
ConnectorCapacitanceforTSOPPackageParameterSymbolParameterDescriptionTestSetupTypMaxUnitCINInputCapacitanceVIN=035pFCOUTOutputCapacitanceVOUT=034.
5pFCIN2ControlPinCapacitanceVIN=03.
57pFRY/BY#OutputCapacitanceVOUT=02.
53.
5pFRESET#ResetInputCapacitanceVIN=02022pFNotes133.
Sampled,not100%tested.
134.
TestconditionsTA=25°C,f=1.
0MHz.
DocumentNumber:002-00247Rev.
*LPage74of109S29GL01GT/S29GL512T11.
TimingSpecifications11.
1KeytoSwitchingWaveforms11.
2ACTestConditionsFigure13.
TestSetupFigure14.
InputWaveformsandMeasurementLevelsWaveformInputsOutputsSteadyChangingfromHtoLChangingfromLtoHDon'tCare,AnyChangePermittedChanging,StateUnknownDoesNotApplyCenterLineisHighImpedanceState(High-Z)Table40.
TestSpecificationParameterAllSpeedsUnitsOutputLoadCapacitance,CL30pFInputRiseandFallTimes[135]1.
5nsInputPulseLevels0.
0-VIOVInputtimingmeasurementreferencelevelsVIO/2VOutputtimingmeasurementreferencelevelsVIO/2VNote135.
MeasuredbetweenVILmaxandVIHmin.
CLDeviceUnderTestVIO0.
0V0.
5VIO0.
5VIOOutputMeasurementLevelInputDocumentNumber:002-00247Rev.
*LPage75of109S29GL01GT/S29GL512T11.
3Power-OnReset(POR)andWarmResetNormalprecautionsmustbetakenforsupplydecouplingtostabilizetheVCCandVIOpowersupplies.
EachdeviceinasystemshouldhavetheVCCandVIOpowersuppliesdecoupledbyasuitablecapacitorclosetothepackageconnections(thiscapacitorisgenerallyontheorderof0.
1F).
11.
3.
1Power-On(Cold)Reset(POR)DuringtheriseofpowersuppliestheVIOsupplyvoltagemustremainlessthanorequaltotheVCCsupplyvoltage.
VIHalsomustremainlessthanorequaltotheVIOsupply.
TheColdResetEmbeddedAlgorithmrequiresarelativelylong,hundredsofs,period(tVCS)toloadalloftheEACalgorithmsanddefaultstatefromnon-volatilememory.
DuringtheColdResetperiodallcontrolsignalsincludingCE#andRESET#areignored.
IfCE#isLOWduringtVCSthedevicemaydrawhigherthannormalPORcurrentduringtVCSbutthelevelofCE#willnotaffecttheColdResetEA.
RESET#maybeHIGHorLOWduringtVCS.
IfRESET#isLOWduringtVCSitmayremainLOWattheendoftVCStoholdthedeviceintheHardwareResetstate.
IfRESET#isHIGHattheendoftVCSthedevicewillgototheStandbystate.
Whenpowerisfirstapplied,withsupplyvoltagebelowVRSTthenrisingtoreachoperatingrangeminimum,internaldeviceconfigurationandwarmresetactivitiesareinitiated.
CE#isignoredforthedurationofthePORoperation(tVCSortVIOS).
RESET#LOWduringthisPORperiodisoptional.
IfRESET#isdrivenLOWduringPORitmustsatisfytheHardwareResetparameterstRPandtRPH.
InwhichcasetheResetoperationswillbecompletedatthelateroftVCSortVIOSortRPH.
ACE#,OE#,orAddresstransitionwillinitiatethe1streadoperation.
IfCE#isheldLOWduringPORthanthecurrentaddresswillbeautomaticallyread.
DuringColdResetthedevicewilldrawICC7current.
Figure15.
Power-UpDiagramTable41.
PowerONandResetParametersParameterDescriptionLimitValueUnittVCSVCCSetupTimetofirstaccess[136,137]Min300stVIOSVIOSetupTimetofirstaccess[136,137]Min300stRPHRESET#LOWtoCE#LOWMin35stRPRESET#PulseWidthMin200nstRHTimebetweenRESET#(HIGH)andCE#(LOW)Min50nstCEHCE#PulseWidthHighMin20nsNotes136.
Not100%tested.
137.
TimingmeasuredfromVCCreachingVCCminimumandVIOreachingVIOminimumtoVIHonResetandVILonCE#.
138.
RESET#LOWisoptionalduringPOR.
IfRESETisassertedduringPOR,thelateroftRPH,tVIOS,ortVCSwilldeterminewhenCE#maygoLOW.
IfRESET#remainsLOWaftertVIOS,ortVCSissatisfied,tRPHismeasuredfromtheendoftVIOS,ortVCS.
RESETmustalsobeHIGHtRHbeforeCE#goesLOW.
139.
VCCVIO-200mVduringpower-up.
140.
VCCandVIOrampratecanbenon-linear.
141.
SumoftRPandtRHmustbeequaltoorgreaterthantRPH.
VCCVIORESET#CE#tRHtVIOStVCStCEHDocumentNumber:002-00247Rev.
*LPage76of109S29GL01GT/S29GL512T11.
3.
2Hardware(Warm)ResetDuringHardwareReset(tRPH)thedevicewilldrawICC5current.
WhenRESET#continuestobeheldatVSS,thedevicedrawsCMOSstandbycurrent(ICC4).
IfRESET#isheldatVIL,butnotatVSS,thestandbycurrentisgreater.
IfaColdResethasnotbeencompletedbythedevicewhenRESET#isassertedLOWaftertVCS,theColdReset#EAwillbeperformedinsteadoftheWarmRESET#,requiringtVCStimetocomplete.
SeeFigure16,HardwareResetonpage76.
AfterthedevicehascompletedPORandenteredtheStandbystate,anylatertransitiontotheHardwareResetstatewillinitiatetheWarmResetEmbeddedAlgorithm.
AWarmResetismuchshorterthanaColdReset,takingtensofs(tRPH)tocomplete.
DuringtheWarmResetEA,anyinprogressEmbeddedAlgorithmisstoppedandtheEACisreturnedtoitsPORstatewithoutreloadingEACalgorithmsfromnon-volatilememory.
AftertheWarmResetEAcompletes,theinterfacewillremainintheHardwareResetstateifRESET#remainsLOW.
WhenRESET#returnsHIGHtheinterfacewilltransittotheStandbystate.
IfRESET#isHIGHattheendoftheWarmResetEA,theinterfacewilldirectlytransittotheStandbystate.
IfCE#isheldLOWduringWarmResetthanthecurrentaddresswillbeautomaticallyread.
IfPORhasnotbeenproperlycompletedbytheendoftVCS,alatertransitiontotheHardwareResetstatewillcauseatransitiontothePower-onResetinterfacestateandinitiatetheColdResetEmbeddedAlgorithm.
ThisensuresthedevicecancompleteaColdResetevenifsomeaspectofthesystemPower-Onvoltageramp-upcausesthePORtonotinitiateorcompletecorrectly.
TheRY/BY#pinisLOWduringcoldorwarmresetasanindicationthatthedeviceisbusyperformingresetoperations.
HardwareResetisinitiatedbytheRESET#signalgoingtoVIL.
Figure16.
HardwareResetRESET#CE#tRPtRPHtRHtCEHDocumentNumber:002-00247Rev.
*LPage77of109S29GL01GT/S29GL512T11.
4ACCharacteristics11.
4.
1AsynchronousReadOperationsTable42.
ReadOperationVIO=VCC=2.
7Vto3.
6V(40°Cto+85°C)ParameterDescriptionTestSetupSpeedOptionUnitJEDECStd100tAVAVtRCReadCycleTime[142]512Mb,1GbMin100nstAVQVtACCAddresstoOutputDelayCE#=VILOE#=VIL512Mb,1GbMax100nstELQVtCEChipEnabletoOutputDelayOE#=VIL512Mb,1GbMax100nstPACCPageAccessTime512Mb,1GbMax15nstGLQVtOEOutputEnabletoOutputDelayReadMax25nsPollMax35tAXQXtOHOutputHoldtimefromAddresses,CE#orOE#,whicheveroccursfirstMin0nstEHQZtDFChipEnableorOutputEnabletoOutputHigh-Z[142]Max15nstOEHOutputEnableHoldTime[142]ReadMin0nsPollMin10nstASOAddressSetupTimetoOE#lowPollMin15nstAHTAddressHoldTimefromCE#orOE#highPollMin0nstCEPHCE#HighPollMin20nstOEPHOE#HighPollMin20nstASSBAutomaticSleeptoStandbytime[142]CE#=VIL,AddressstableTyp5sMax8stBLELtFLELBYTE#LowtoCE#LowMin10nstBHELtFHELBYTE#HightoCE#LowMin10nstBLQVtFLQVBYTE#LowtoOutputHigh-Z[142]Max1stBHQVtFHQVBYTE#HightoOutputDelayMax1sNote142.
Not100%tested.
DocumentNumber:002-00247Rev.
*LPage78of109S29GL01GT/S29GL512TTable43.
ReadOperationVIO=1.
65VtoVCC,VCC=2.
7Vto3.
6V(40°Cto+85°C)ParameterDescriptionTestSetupSpeedOptionUnitJEDECStd110tAVAVtRCReadCycleTime[143]512Mb,1GbMin110nstAVQVtACCAddresstoOutputDelayCE#=VILOE#=VIL512Mb,1GbMax110nstELQVtCEChipEnabletoOutputDelayOE#=VIL512Mb,1GbMax110nstPACCPageAccessTime512Mb,1GbMin25nstGLQVtOEOutputEnabletoOutputDelayReadandPollMax35nstAXQXtOHOutputHoldtimefromAddresses,CE#orOE#,whicheveroccursfirstMin0nstEHQZtDFChipEnableorOutputEnabletoOutputHigh-Z[143]Max20nstOEHOutputEnableHoldTime[143]ReadMin0nsPollMin10nstASOAddressSetupTimetoOE#lowPollMin15nstAHTAddressHoldTimefromCE#orOE#highPollMin0nstCEPHCE#HighPollMin20nstOEPHOE#HighPollMin20nstASSBAutomaticSleeptoStandbytime[143]CE#=VIL,AddressstableTyp5sMax8stBLELtFLELBYTE#LowtoCE#LowMin10nstBHELtFHELBYTE#HightoCE#LowMin10nstBLQVtFLQVBYTE#LowtoOutputHigh-Z[143]Max1stBHQVtFHQVBYTE#HightoOutputDelayMax1sNote143.
Not100%tested.
DocumentNumber:002-00247Rev.
*LPage79of109S29GL01GT/S29GL512TTable44.
ReadOperationVIO=VCC=2.
7Vto3.
6V(40°Cto+105°C)ParameterDescriptionTestSetupSpeedOptionUnitJEDECStd110tAVAVtRCReadCycleTime[144]512Mb,1GbMin110nstAVQVtACCAddresstoOutputDelayCE#=VILOE#=VIL512Mb,1GbMax110nstELQVtCEChipEnabletoOutputDelayOE#=VIL512Mb,1GbMax110nstPACCPageAccessTime512Mb,1GbMax15nstGLQVtOEOutputEnabletoOutputDelayReadMax25nsPollMax35tAXQXtOHOutputHoldtimefromAddresses,CE#orOE#,whicheveroccursfirstMin0nstEHQZtDFChipEnableorOutputEnabletoOutputHigh-Z[144]Max15nstOEHOutputEnableHoldTime[144]ReadMin0nsPollMin10nstASOAddressSetupTimetoOE#lowPollMin15nstAHTAddressHoldTimefromCE#orOE#highPollMin0nstCEPHCE#HighPollMin20nstOEPHOE#HighPollMin20nstASSBAutomaticSleeptoStandbytime[144]CE#=VIL,AddressstableTyp5sMax8stBLELtFLELBYTE#LowtoCE#LowMin10nstBHELtFHELBYTE#HightoCE#LowMin10nstBLQVtFLQVBYTE#LowtoOutputHigh-Z[144]Max1stBHQVtFHQVBYTE#HightoOutputDelayMax1sNote144.
Not100%tested.
DocumentNumber:002-00247Rev.
*LPage80of109S29GL01GT/S29GL512TTable45.
ReadOperationVIO=1.
65VtoVCC,VCC=2.
7Vto3.
6V(40°Cto+105°C)ParameterDescriptionTestSetupSpeedOptionUnitJEDECStd120tAVAVtRCReadCycleTime[145]512Mb,1GbMin120nstAVQVtACCAddresstoOutputDelayCE#=VILOE#=VIL512Mb,1GbMax120nstELQVtCEChipEnabletoOutputDelayOE#=VIL512Mb,1GbMax120nstPACCPageAccessTime512Mb,1GbMax25nstGLQVtOEOutputEnabletoOutputDelayReadandPollMax35nstAXQXtOHOutputHoldtimefromAddresses,CE#orOE#,whicheveroccursfirstMin0nstEHQZtDFChipEnableorOutputEnabletoOutputHigh-Z[145]Max15nstOEHOutputEnableHoldTime[145]ReadMin0nsPollMin10nstASOAddressSetupTimetoOE#lowPollMin15nstAHTAddressHoldTimefromCE#orOE#highPollMin0nstCEPHCE#HighPollMin20nstOEPHOE#HighPollMin20nstASSBAutomaticSleeptoStandbytime[145]CE#=VIL,AddressstableTyp5sMax8stBLELtFLELBYTE#LowtoCE#LowMin10nstBHELtFHELBYTE#HightoCE#LowMin10nstBLQVtFLQVBYTE#LowtoOutputHigh-Z[145]Max1stBHQVtFHQVBYTE#HightoOutputDelayMax1sNote145.
Not100%tested.
DocumentNumber:002-00247Rev.
*LPage81of109S29GL01GT/S29GL512TTable46.
ReadOperationVIO=VCC=2.
7Vto3.
6V(–40°Cto+125°C)ParameterDescriptionTestSetupSpeedOptionUnitJEDECStd120tAVAVtRCReadCycleTime[146]CE#=VILOE#=VIL512Mb,1GbMin120nstAVQVtACCAddresstoOutputDelayOE#=VIL512Mb,1GbMax120nstELQVtCEChipEnabletoOutputDelay512Mb,1GbMax120nstPACCPageAccessTime512Mb,1GbMax15nstGLQVtOEOutputEnabletoOutputDelayReadMax25nsPollMax35nstAXQXtOHOutputHoldtimefromAddresses,CE#orOE#,whicheveroccursfirstMin0nstEHQZtDFChipEnableorOutputEnabletoOutputHigh-Z[146]Max15nstOEHOutputEnableHoldTime[146]ReadMin0nsPollMin10nstASOAddressSetupTimetoOE#lowPollMin15nstAHTAddressHoldTimefromCE#orOE#highPollMin0nstCEPHCE#HighPollMin20nstOEPHOE#HighPollMin20nstASSBAutomaticSleeptoStandbytime[146]CE#=VIL,AddressstableTyp5μsMax8μstBLELtFLELBYTE#LowtoCE#LowMin10nstBHELtFHELBYTE#HightoCE#LowMin10nstBLQVtFLQVBYTE#LowtoOutputHigh-Z[146]Max1μstBHQVtFHQVBYTE#HightoOutputDelayMax1μsNote146.
Not100%tested.
DocumentNumber:002-00247Rev.
*LPage82of109S29GL01GT/S29GL512TFigure17.
BacktoBackRead(tACC)OperationTimingDiagram[148]Table47.
ReadOperationVIO=1.
65VtoVCC,VCC=2.
7Vto3.
6V(–40°Cto+125°C)ParameterDescriptionTestSetupSpeedOptionUnitJEDECStd130tAVAVtRCReadCycleTime[147]CE#=VILOE#=VIL512Mb,1GbMin130nstAVQVtACCAddresstoOutputDelayOE#=VIL512Mb,1GbMax130nstELQVtCEChipEnabletoOutputDelay512Mb,1GbMax130nstPACCPageAccessTime512Mb,1GbMax20nstGLQVtOEOutputEnabletoOutputDelayReadMax25nsPollMax35nstAXQXtOHOutputHoldtimefromAddresses,CE#orOE#,whicheveroccursfirstMin0nstEHQZtDFChipEnableorOutputEnabletoOutputHigh-Z[147]Max15nstOEHOutputEnableHoldTime[147]ReadMin0nsPollMin10nstASOAddressSetupTimetoOE#lowPollMin15nstAHTAddressHoldTimefromCE#orOE#highPollMin0nstCEPHCE#HighPollMin20nstOEPHOE#HighPollMin20nstASSBAutomaticSleeptoStandbytime[147]CE#=VIL,AddressstableTyp5μsMax8μstBLELtFLELBYTE#LowtoCE#LowMin10nstBHELtFHELBYTE#HightoCE#LowMin10nstBLQVtFLQVBYTE#LowtoOutputHigh-Z[147]Max1μstBHQVtFHQVBYTE#HightoOutputDelayMax1μsNote147.
Not100%tested.
Amax-A0CE#OE#DQ15-DQ0tACCtOEtCEtDFtDFtOHtOHtOHNote148.
AddressareAmax:A0inwordmode;Amax:A-1inbytemode,DataareDQ15-DQ0inwordmode;DQ7-DQ0inbytemode.
DocumentNumber:002-00247Rev.
*LPage83of109S29GL01GT/S29GL512TFigure18.
BacktoBackReadOperation(tRC)TimingDiagram[149,150]Figure19.
PageReadTimingDiagram[149,151]Amax-A0CE#OE#DQ15-DQ0tRCtACCtOEtCEtDFtOHtOHNotes149.
AddressareAmax:A0inwordmode;Amax:A-1inbytemode,DataareDQ15-DQ0inwordmode;DQ7-DQ0inbytemode.
150.
BacktoBackoperations,inwhichCE#remainsLOWbetweenaccesses,requiresanaddresschangetoinitiatethesecondaccess.
151.
ToggleA3:A0.
inwordmode;A3:A-1inbytemode.
Amax-A4A3-A0CE#OE#DQ15-DQ0tACCtOEtCEtPACCDocumentNumber:002-00247Rev.
*LPage84of109S29GL01GT/S29GL512T11.
4.
2AsynchronousWriteOperationsFigure20.
BacktoBackWriteOperationTimingDiagram[153]Table48.
WriteOperationsParameterDescriptionVIO=2.
7VtoVCCVIO=1.
65VtoVCCUnitJEDECStdtAVAVtWCWriteCycleTime[152]Min60nstAVWLtASAddressSetupTimeMin0nstASOAddressSetupTimetoOE#LowduringtogglebitpollingMin15nstWLAXtAHAddressHoldTimeMin45nstAHTAddressHoldTimeFromCE#orOE#HighduringtogglebitpollingMin0nstDVWHtDSDataSetupTimeMin30nstWHDXtDHDataHoldTimeMin0nstGHWLtGHWLReadRecoveryTimeBeforeWrite(OE#HightoWE#Low)Min0nstELWLtCSCE#SetupTimeMin0nstWHEHtCHCE#HoldTimeMin0nstWLWHtWPWE#PulseWidthMin25nstWHWLtWPHWE#PulseWidthHighMin20nstSEASectorEraseTime-OutMin50sNotes152.
Not100%tested.
153.
AddressareAmax:A0inwordmode;Amax:A-1inbytemode,DataareDQ15-DQ0inwordmode;DQ7-DQ0inbytemode.
Amax-A0CE#OE#WE#DQ15-DQ0tDStDHtWPtAStAHtWPHtWCtCStCHDocumentNumber:002-00247Rev.
*LPage85of109S29GL01GT/S29GL512TFigure21.
BacktoBack(CE#VIL)WriteOperationTimingDiagram[154]Figure22.
WritetoRead(tACC)OperationTimingDiagram[154]Amax-A0CE#OE#WE#DQ15-DQ0tDStDHtWPtAStAHtWPHtWCtCSNote154.
AddressareAmax:A0inwordmode;Amax:A-1inbytemode,DataareDQ15-DQ0inwordmode;DQ7-DQ0inbytemode.
Amax-A0CE#OE#WE#DQ15-DQ0tACCtOEtOEHtDFtDFtOHtOHtOHtAStAHtDStDHtWPtCStSR/WDocumentNumber:002-00247Rev.
*LPage86of109S29GL01GT/S29GL512TFigure23.
WritetoRead(tCE)OperationTimingDiagram[155]Figure24.
ReadtoWrite(CE#VIL)OperationTimingDiagram[155]Amax-A0CE#OE#WE#DQ15-DQ0tACCtOEtOEHtCEtDFtDFtOHtOHtOHtAStAHtDStDHtWPtCStCHtSR/WNote155.
AddressareAmax:A0inwordmode;Amax:A-1inbytemode,DataareDQ15-DQ0inwordmode;DQ7-DQ0inbytemode.
Amax-A0CE#OE#WE#DQ15-DQ0tAStDStAHtDHtCHtACCtCEtOEtOHtOHtDFtWPtGHWLDocumentNumber:002-00247Rev.
*LPage87of109S29GL01GT/S29GL512TFigure25.
ReadtoWrite(CE#Toggle)OperationTimingDiagram[156]Table49.
Erase/ProgramOperationsParameterDescriptionVIO=2.
7VtoVCCVIO=1.
65VtoVCCUnitJEDECStdtWHWH1tWHWH1WriteBufferProgramOperationTypNote[159]sEffectiveWriteBufferProgramOperationperWordTypNote[159]sProgramOperationperWordorPageTypNote[159]stWHWH2tWHWH2SectorEraseOperation[157]TypNote[159]mstBUSYErase/ProgramValidtoRY/BY#DelayMax80nstSR/WLatencybetweenReadandWriteoperations[158]Min10nstESLEraseSuspendLatencyMaxNote[159]stPSLProgramSuspendLatencyMaxNote[159]stRBRY/BY#RecoveryTimeMin0stPPBPPBLockUnlockMin80sMax120tDPDataPollingtoProtectedSector(Program)Min3sMax20DataPollingtoProtectedSector(Erase)Min3Max100tVHHVHHRiseandFallTime[157]Min250nstTORExceededTimingCleared(DQ5)Min100nsAmax-A0CE#OE#WE#DQ15-DQ0tACCtOEtCEtAStCStDStAHtDHtWPtCHtOHtOHtOHtDFtDFtGHWLNotes156.
AddressareAmax:A0inwordmode;Amax:A-1inbytemode,DataareDQ15-DQ0inwordmode;DQ7-DQ0inbytemode.
157.
Not100%tested.
158.
UpontherisingedgeofWE#,mustwaittSR/Wbeforeswitchingtoanotheraddress.
159.
SeeTable16onpage46andTable17onpage47forspecificvalues.
DocumentNumber:002-00247Rev.
*LPage88of109S29GL01GT/S29GL512TFigure26.
AcceleratedProgramOperationTimingDiagramFigure27.
ProgramOperationTimingDiagram[160,161]Notes160.
AddressareAmax:A0inwordmode;Amax:A-1inbytemode,DataareDQ15-DQ0inwordmode;DQ7-DQ0inbytemode.
161.
PA=programaddress,PD=programdata,DOUTisthetruedataattheprogramaddress.
ACCtVHHVHHVILorVIHVILorVIHtVHHOE#WE#CE#DataAddressestDStAHtDHtWPPDtWHWH1tWCtAStWPH555hPAPAReadStatusData(lasttwocycles)A0htCSStatusDOUTProgramCommandSequence(lasttwocycles)RY/BY#tRBtBUSYtCHPADocumentNumber:002-00247Rev.
*LPage89of109S29GL01GT/S29GL512TFigure28.
Chip/SectorEraseOperationTimingDiagram[162,163]Figure29.
Data#PollingTimingDiagram(DuringEmbeddedAlgorithms)[164]OE#CE#AddressesWE#Data2AAhSAtAHtWPtWCtAStWPH555hforchiperase10forChipErasetDStCStDHtCHtWHWH2VAVAEraseCommandSequence(lasttwocycles)ReadStatusData(lasttwocycles)RY/BY#tRBtBUSY30hInProgressComplete55hNotes162.
AddressareAmax:A0inwordmode;Amax:A-1inbytemode,DataareDQ15-DQ0inwordmode;DQ7-DQ0inbytemode.
163.
SA=sectoraddress(forsectorerase),VA=validaddressforreadingstatusdata.
164.
VA=Validaddress.
Illustrationshowsfirststatuscycleaftercommandsequence,laststatusreadcycle,andarraydatareadcycle.
WE#CE#OE#HighZtOEHighZDQ7DQ6–DQ0RY/BY#tBUSYComplementTrueAddressesVAtOEHtCEtCHtOHtDFVAVAStatusDataComplementValidDataValidDatatACCtRCStatusDataTrueDocumentNumber:002-00247Rev.
*LPage90of109S29GL01GT/S29GL512TFigure30.
ToggleBitTimingDiagram(DuringEmbeddedAlgorithms)[165]Figure31.
DQ2vs.
DQ6RelationshipDiagram[166]OE#CE#WE#AddressestOEHtDHtAHTtASOtOEPHtOEValidData(firstread)(secondread)(stopstoggling)tCEPHtAHTtASDQ2andDQ6ValidDataValidStatusValidStatusValidStatusRY/BY#Notes165.
DQ6willtoggleatanyreadaddresswhilethedeviceisbusy.
DQ2willtoggleiftheaddressiswithintheactivelyerasingsector.
166.
ThesystemmayuseOE#orCE#totoggleDQ2andDQ6.
DQ2togglesonlywhenreadatanaddresswithintheerase-suspendedsector.
EnterEraseEraseEraseEnterEraseSuspendProgramEraseSuspendReadEraseSuspendReadEraseWE#DQ6DQ2EraseCompleteEraseSuspendSuspendProgramResumeEmbeddedErasingDocumentNumber:002-00247Rev.
*LPage91of109S29GL01GT/S29GL512T11.
4.
3AlternateCE#ControlledWriteOperationsFigure32.
BacktoBack(CE#)WriteOperationTimingDiagram[168]Table50.
AlternateCE#ControlledWriteOperationsParameterDescriptionVIO=2.
7VtoVCCVIO=1.
65VtoVCCUnitJEDECStdtAVAVtWCWriteCycleTime[167]Min60nstAVWLtASAddressSetupTimeMin0nstASOAddressSetupTimetoOE#LowduringtogglebitpollingMin15nstWLAXtAHAddressHoldTimeMin45nstAHTAddressHoldTimeFromCE#orOE#HighduringtogglebitpollingMin0nstDVWHtDSDataSetupTimeMin30nstWHDXtDHDataHoldTimeMin0nstCEPHCE#HighduringtogglebitpollingMin20nst0EPHOE#HighduringtogglebitpollingMin20nstGHEKtGHELReadRecoveryTimeBeforeWrite(OE#HightoWE#Low)Min0nstWLELtWSWE#SetupTimeMin0nstELWHtWHWE#HoldTimeMin0nstELEHtCPCE#PulseWidthMin25nstEHELtCPHCE#PulseWidthHighMin20nstSEASectorEraseTime-OutMin50sNote167.
Not100%tested.
Note168.
AddressareAmax:A0inwordmode;Amax:A-1inbytemode,DataareDQ15-DQ0inwordmode;DQ7-DQ0inbytemode.
Amax-A0CE#OE#WE#DQ15-DQ0tDStDHtAStAHtWCtCPtCPHtWStWHDocumentNumber:002-00247Rev.
*LPage92of109S29GL01GT/S29GL512TFigure33.
(CE#)WritetoReadOperationTimingDiagram[169]Amax-A0CE#OE#WE#DQ15-DQ0tACCtOEtCEtDFtOHtWCtAStAHtDStDHtWStWHtOEHNote169.
AddressareAmax:A0inwordmode;Amax:A-1inbytemode,DataareDQ15-DQ0inwordmode;DQ7-DQ0inbytemode.
DocumentNumber:002-00247Rev.
*LPage93of109S29GL01GT/S29GL512T12.
PhysicalInterface12.
156-PinTSOP12.
1.
1ConnectionDiagramFigure34.
56-PinStandardTSOP[170]Note170.
Pin27,28,and30areReservedforFutureUse(RFU).
31841256789101920212223241112131415161746454847444342404154535556525150493938373635343332313056-PinTSOP2526272829A15A18A14A13A12A11A10A9A8A19A20WE#RESET#A21WP#/ACCRY/BY#A17A7A6A5A23A22A4A3A2A1RFURFUA24A25DQ10A16BYTE#VSSDQ15/A-1DQ7DQ14DQ6DQ2DQ9DQ1DQ8DQ13DQ5DQ12DQ4VCCDQ11DQ3DQ0OE#VSSCE#A0VIORFUNCforGL512TDocumentNumber:002-00247Rev.
*LPage94of109S29GL01GT/S29GL512T12.
1.
2PhysicalDiagramFigure35.
56-PinThinSmallOutlinePackage(TSOP),14x20mm(002-15549)3.
PIN1IDENTIFIERFORREVERSEPINOUT(DIEDOWN):INKORLASERMARK.
4.
TOBEDETERMINEDATTHESEATINGPLANE-C-.
THESEATINGPLANEISLEADSAREALLOWEDTORESTFREELYONAFLATHORIZONTALSURFACE.
5.
DIMENSIONSD1ANDEDONOTINCLUDEMOLDPROTRUSION.
ALLOWABLE6.
DIMENSIONbDOESNOTINCLUDEDAMBARPROTRUSION.
ALLOWABLEDAMBARMATERIALCONDITION.
DAMBARCANNOTBELOCATEDONLOWERRADIUSOR7.
THESEDIMENSIONSAPPLYTOTHEFLATSECTIONOFTHELEADBETWEEN8.
LEADCOPLANARITYSHALLBEWITHIN0.
10mmASMEASUREDFROMTHE9.
DIMENSION"e"ISMEASUREDATTHECENTERLINEOFTHELEADS.
NOTES:1.
DIMENSIONSAREINMILLIMETERS(mm).
2.
PIN1IDENTIFIERFORSTANDARDPINOUT(DIEUP).
1.
051.
000.
95A2NR0LecD1EDbc1b10.
50BASIC0.
600°0.
080.
50560.
2080.
700.
220.
2020.
00BASIC18.
40BASIC14.
00BASIC0.
100.
170.
100.
170.
210.
270.
160.
23A1A0.
050.
151.
20SYMBOLMIN.
MAX.
DIMENSIONSNOM.
DEFINEDASTHEPLANEOFCONTACTTHATISMADEWHENTHEPACKAGEMOLDPROTRUSIONONEIS0.
15mmPERSIDEANDOND1IS0.
25mmPERSIDE.
PROTRUSIONSHALLBE0.
08mmTOTALINEXCESSOFbDIMENSIONATMAX.
THEFOOT.
MINIMUMSPACEBETWEENPROTRUSIONANDANADJACENTLEADTOBE0.
07mm.
0.
10mmAND0.
25mmFROMTHELEADTIP.
SEATINGPLANE.
10.
JEDECSPECIFICATIONNO.
REF:MO-142(D)EC.
002-15549*BDocumentNumber:002-00247Rev.
*LPage95of109S29GL01GT/S29GL512T12.
264-BallFBGA12.
2.
1ConnectionDiagramFigure36.
64-ballFortifiedBallGridArray[171,172]Notes171.
BallsA1,A8,H1,andH8,NoConnect(NC).
172.
BallsB1,C1,D1,E1,andG1ReservedforFutureUse(RFU).
ABCDEFGH8NCA22A23VIOVSSA24A25NC7A13A12A14A15A16DQ15/A-1VSS6A9A8A10A11DQ7DQ14DQ13DQ65WE#RESET#A21A19DQ5DQ12VCCDQ44RY/BY#WP#/ACCA18A20DQ2DQ10DQ11DQ33A7A17A6A5DQ0DQ8DQ9DQ12A3A4A2A1A0CE#OE#VSS1NCRFUVioRFUNCTOPVIEWPRODUCTPinoutNCforGL512TRFURFURFUBYTE#DocumentNumber:002-00247Rev.
*LPage96of109S29GL01GT/S29GL512T12.
2.
2PhysicalDiagram–LAE064Figure37.
LAE064—64-ballFortifiedBallGridArray(FBGA),9x9mm(002-15537)WHENTHEREISANODDNUMBEROFSOLDERBALLSINTHEOUTERROW,"SD"OR"SE"=0.
POSITIONOFTHECENTERSOLDERBALLINTHEOUTERROW.
"SD"AND"SE"AREMEASUREDWITHRESPECTTODATUMSAANDBANDDEFINETHENISTHETOTALNUMBEROFSOLDERBALLS.
SYMBOL"ME"ISTHEBALLCOLUMNMATRIXSIZEINTHE"E"DIRECTION.
SYMBOL"MD"ISTHEBALLROWMATRIXSIZEINTHE"D"DIRECTION.
eREPRESENTSTHESOLDERBALLGRIDPITCH.
DIMENSION"b"ISMEASUREDATTHEMAXIMUMBALLDIAMETERINAPLANEPARALLELBALLPOSITIONDESIGNATIONPERJEP95SECTION3,SPP-020(RECTANGULAR)ORSPP-010(SQUARE).
ALLDIMENSIONSAREINMILLIMETERS.
DIMENSIONINGANDTOLERANCINGPERASMEY14.
5M-1994.
NOTES:TODATUMC.
765.
2.
4.
3.
1.
"+"INDICATESTHETHEORETICALCENTEROFDEPOPULATEDBALLS.
8.
WHENTHEREISANEVENNUMBEROFSOLDERBALLSINTHEOUTERROW,"SD"=eD/2AND"SE"=eE/2.
9A1CORNERTOBEIDENTIFIEDBYCHAMFER,LASERORINKMARK,METALLIZEDMARKINDENTATIONOROTHERMEANS.
SD/SEeDNbE1MDA1A2D1AEDMEeE0.
50BSC.
1.
00BSC.
0.
500.
700.
606487.
00BSC.
7.
00BSC.
0.
600.
40-9.
00BSC.
89.
00BSC.
1.
40-----1.
00BSC.
DIMENSIONSSYMBOLMIN.
NOM.
MAX.
10.
JEDECSPECIFICATIONNO.
REF:N/A002-15537*ADocumentNumber:002-00247Rev.
*LPage97of109S29GL01GT/S29GL512T12.
2.
3PhysicalDiagram—LAA064Figure38.
LAA064—64-ballFortifiedBallGridArray(FBGA)(002-15536)SD/SEeDNbE1MDA1A2D1AEDME0.
50BSC.
1.
00BSC.
0.
500.
700.
606487.
00BSC.
7.
00BSC.
0.
600.
40-13.
00BSC.
811.
00BSC.
1.
40-----eE1.
00BSC.
WHENTHEREISANODDNUMBEROFSOLDERBALLSINTHEOUTERROW,"SD"OR"SE"=0.
POSITIONOFTHECENTERSOLDERBALLINTHEOUTERROW.
"SD"AND"SE"AREMEASUREDWITHRESPECTTODATUMSAANDBANDDEFINETHENISTHETOTALNUMBEROFSOLDERBALLS.
SYMBOL"ME"ISTHEBALLCOLUMNMATRIXSIZEINTHE"E"DIRECTION.
SYMBOL"MD"ISTHEBALLROWMATRIXSIZEINTHE"D"DIRECTION.
eREPRESENTSTHESOLDERBALLGRIDPITCH.
DIMENSION"b"ISMEASUREDATTHEMAXIMUMBALLDIAMETERINAPLANEPARALLELBALLPOSITIONDESIGNATIONPERJEP95SECTION3,SPP-020(RECTANGULAR)ORSPP-010(SQUARE).
ALLDIMENSIONSAREINMILLIMETERS.
DIMENSIONINGANDTOLERANCINGPERASMEY14.
5M-1994.
NOTES:TODATUMC.
765.
2.
4.
3.
1.
"+"INDICATESTHETHEORETICALCENTEROFDEPOPULATEDBALLS.
8.
WHENTHEREISANEVENNUMBEROFSOLDERBALLSINTHEOUTERROW,"SD"=eD/2AND"SE"=eE/2.
9A1CORNERTOBEIDENTIFIEDBYCHAMFER,LASERORINKMARK,METALLIZEDMARKINDENTATIONOROTHERMEANS.
DIMENSIONSSYMBOLMIN.
NOM.
MAX.
002-15536**DocumentNumber:002-00247Rev.
*LPage98of109S29GL01GT/S29GL512T12.
356-BallFBGA12.
3.
1ConnectionDiagramFigure39.
56-ballFortifiedBallGridArray[173]87654321TOPVIEWProductPinoutA21A15A16A22VSSA24A13A12RFU/A25A14DQ7DQ15/A-1DQ14A11A9A19DQ6A10DQ12DQ13DQ5A8A20A23VIODQ4BYTE#WE#RY/BY#RESET#VCCDQ3DQ11WP#/ACCA18RFUDQ1A17DQ10DQ9DQ2RFUA5A6VSSA4DQ0OE#DQ8A7A2A3A0A1RFUCE#ABCDEFGH1GbOnlyNote173.
BallsA3,B3,andG1ReservedforFutureUse(RFU).
DocumentNumber:002-00247Rev.
*LPage99of109S29GL01GT/S29GL512T12.
3.
2PhysicalDiagram—VBU056Figure40.
VBU056(002-15551)SD/SEnbE1MDA1D1AEDME1.
00--0.
17--9.
00BSC.
7.
00BSC.
5.
60BSC.
5.
60BSC.
88560.
33-0.
450.
80BSC.
0.
40BSC.
eD/eEWHENTHEREISANODDNUMBEROFSOLDERBALLSINTHEOUTERROW,"SD"OR"SE"=0.
POSITIONOFTHECENTERSOLDERBALLINTHEOUTERROW.
"SD"AND"SE"AREMEASUREDWITHRESPECTTODATUMSAANDBANDDEFINETHEnISTHETOTALNUMBEROFPOPULATEDSOLDERBALLSFORMATRIXSIZEMDANDME.
SYMBOL"ME"ISTHEBALLCOLUMNMATRIXSIZEINTHE"E"DIRECTION.
SYMBOL"MD"ISTHEBALLROWMATRIXSIZEINTHE"D"DIRECTION.
eREPRESENTSTHESOLDERBALLGRIDPITCH.
DIMENSION"b"ISMEASUREDATTHEMAXIMUMBALLDIAMETERINAPLANEPARALLELTODATUMC.
BALLPOSITIONDESIGNATIONPERJEP95,SECTION3,SPP-010/020.
ALLDIMENSIONSAREINMILLIMETERS.
DIMENSIONINGANDTOLERANCINGPERASMEY14.
5M-1994.
NOTES:765.
2.
4.
3.
1.
"+"INDICATESTHETHEORETICALCENTEROFDEPOPULATEDBALLS.
8.
WHENTHEREISANEVENNUMBEROFSOLDERBALLSINTHEOUTERROW,"SD"=eD/2and"SE"=eE/2.
9A1CORNERTOBEIDENTIFIEDBYCHAMFER,LASERORINKMARK,METALLIZEDMARKINDENTATIONOROTHERMEANS.
DIMENSIONSSYMBOLMIN.
NOM.
MAX.
002-15551**DocumentNumber:002-00247Rev.
*LPage100of109S29GL01GT/S29GL512T13.
SpecialHandlingInstructionsforFBGAPackageSpecialhandlingisrequiredforflashmemoryproductsinFBGApackages.
FlashmemorydevicesinFBGApackagesmaybedamagedifexposedtoultrasoniccleaningmethods.
Thepackageand/ordataintegritymaybecompromisedifthepackagebodyisexposedtotemperaturesabove150°Cforprolongedperiodsoftime.
14.
OrderingInformationValidCombinations—StandardTheRecommendedCombinationstablelistsconfigurationsplannedtobeavailableinvolume.
Thetablebelowwillbeupdatedasnewcombinationsarereleased.
Consultyourlocalsalesrepresentativetoconfirmavailabilityofspecificcombinationsandtocheckonnewlyreleasedcombinations.
Table51.
S29GL-TValidCombinationsforCFIVersion1.
3S29GL-TValidCombinationsBaseOPNSpeed(ns)PackageandTemperature[174]ModelNumberPackingType[175]OrderingPartNumber(yy=ModelNumber,x=PackingType)S29GL01GT100DHI,FAI,FHI,GHI,TFI03,040,3S29GL01GT10DHIyyxS29GL01GT10FAIyyxS29GL01GT10FHIyyxS29GL01GT10GHIyyxS29GL01GT10TFIyyx110DHI,FAI,FHI,GHI,TFIV3,V4S29GL01GT11DHIyyxS29GL01GT11FAIyyxS29GL01GT11FHIyyxS29GL01GT11GHIyyxS29GL01GT11TFIyyx110DHV,FHV,TFV03,04S29GL01GT11DHVyyxS29GL01GT11FHVyyxS29GL01GT11TFVyyx120DHV,FHV,TFVV3,V4S29GL01GT12DHVyyxS29GL01GT12FHVyyxS29GL01GT12TFVyyx120DHN,TFN03,04S29GL01GT12DHNyyxxS29GL01GT12TFNyyxx130DHN,TFNV3,V4S29GL01GT13DHNyyxxS29GL01GT13TFNyyxxS29GL512T100DHI,FAI,FHI,GHI,TFI03,040,3S29GL512T10DHIyyxS29GL512T10FAIyyxS29GL512T10FHIyyxS29GL512T10GHIyyxS29GL512T10TFIyyx110DHI,FAI,FHI,GHI,TFIV3,V4S29GL512T11DHIyyxS29GL512T11FAIyyxS29GL512T11FHIyyxS29GL512T11GHIyyxS29GL512T11TFIyyx110DHV,FHV,TFV03,04S29GL512T11DHVyyxS29GL512T11FHVyyxS29GL512T11TFVyyx120DHV,FHV,TFVV3,V4S29GL512T12DHVyyxS29GL512T12FHVyyxS29GL512T12TFVyyx120DHN,TFN03,04S29GL512T12DHNyyxxS29GL512T12TFNyyxx130DHN,TFNV3,V4S29GL512T13DHNyyxxS29GL512T13TFNyyxxNotes174.
Additionalspeed,package,andtemperatureoptionsmaybeofferedinthefuture.
Checkwithyourlocalsalesrepresentativeforavailability.
175.
PackageType0isstandardoption.
DocumentNumber:002-00247Rev.
*LPage101of109S29GL01GT/S29GL512TTable52.
S29GL-TValidCombinationsforCFIVersion1.
5S29GL-TValidCombinationsBaseOPNSpeed(ns)PackageandTemperature[176]ModelNumberPackingType[177]OrderingPartNumber(yy=ModelNumber,x=PackingType)S29GL01GT100DHI,FAI,FHI,GHI,TFI01,020,3S29GL01GT10DHIyyxS29GL01GT10FAIyyxS29GL01GT10FHIyyxS29GL01GT10GHIyyxS29GL01GT10TFIyyx110DHI,FAI,FHI,GHI,TFIV1,V2S29GL01GT11DHIyyxS29GL01GT11FAIyyxS29GL01GT11FHIyyxS29GL01GT11GHIyyxS29GL01GT11TFIyyx110DHV,FHV,TFV01,02S29GL01GT11DHVyyxS29GL01GT11FHVyyxS29GL01GT11TFVyyx120DHV,FHV,TFVV1,V2S29GL01GT12DHVyyxS29GL01GT12FHVyyxS29GL01GT12TFVyyx120DHN,TFN01,02S29GL01GT12DHNyyxxS29GL01GT12FHNyyxxS29GL01GT12TFNyyxx130DHN,TFNV1,V2S29GL01GT13DHNyyxxS29GL01GT13TFNyyxxS29GL512T100DHI,FAI,FHI,GHI,TFI01,020,3S29GL512T10DHIyyxS29GL512T10FAIyyxS29GL512T10FHIyyxS29GL512T10GHIyyxS29GL512T10TFIyyx110DHI,FAI,FHI,GHI,TFIV1,V2S29GL512T11DHIyyxS29GL512T11FAIyyxS29GL512T11FHIyyxS29GL512T11GHIyyxS29GL512T11TFIyyx110DHV,FHV,TFV01,02S29GL512T11DHVyyxS29GL512T11FHVyyxS29GL512T11TFVyyx120DHV,FHV,TFVV1,V2S29GL512T12DHVyyxS29GL512T12FHVyyxS29GL512T12TFVyyx120DHN,TFN01,02S29GL512T12DHNyyxxS29GL512T12TFNyyxx130DHN,TFNV1,V2S29GL512T13DHNyyxxS29GL512T13TFNyyxxNotes176.
Additionalspeed,package,andtemperatureoptionsmaybeofferedinthefuture.
Checkwithyourlocalsalesrepresentativeforavailability.
177.
PackageType0isstandardoption.
DocumentNumber:002-00247Rev.
*LPage102of109S29GL01GT/S29GL512TValidCombinations—AutomotiveGrade/AEC-Q100ThetablebelowlistsconfigurationsthatareAutomotiveGrade/AEC-Q100qualifiedandareplannedtobeavailableinvolume.
Thetablewillbeupdatedasnewcombinationsarereleased.
Consultyourlocalsalesrepresentativetoconfirmavailabilityofspecificcombinationsandtocheckonnewlyreleasedcombinations.
ProductionPartApprovalProcess(PPAP)supportisonlyprovidedforAEC-Q100gradeproducts.
Productstobeusedinend-useapplicationsthatrequireISO/TS-16949compliancemustbeAEC-Q100gradeproductsincombinationwithPPAP.
Non–AEC-Q100gradeproductsarenotmanufacturedordocumentedinfullcompliancewithISO/TS-16949requirements.
AEC-Q100gradeproductsarealsoofferedwithoutPPAPsupportforend-useapplicationsthatdonotrequireISO/TS-16949compliance.
Table53.
S29GL-TValidCombinationsforCFIVersion1.
3—AutomotiveGrade/AEC-Q100S29GL-TValidCombinations—AutomotiveGrade/AEC-Q100BaseOPNSpeed(ns)PackageandTemperatureModelNumberPackingTypeOrderingPartNumber(yy=ModelNumber,x=PackingType)S29GL01GT100DHA,FHA,TFA03,040,3S29GL01GT10DHAyyxS29GL01GT10FHAyyxS29GL01GT10TFAyyx110DHA,FHA,TFAV3,V4S29GL01GT11DHAyyxS29GL01GT11FHAyyxS29GL01GT11TFAyyx110DHB,FHB,TFB03,04S29GL01GT11DHByyxS29GL01GT11FHByyxS29GL01GT11TFByyx120DHB,FHB,TFBV3,V4S29GL01GT12DHByyxS29GL01GT12FHByyxS29GL01GT12TFByyxS29GL512T100DHA,FHA,TFA03,040,3S29GL512T10DHAyyxS29GL512T10FHAyyxS29GL512T10TFAyyx110DHA,FHA,TFAV3,V4S29GL512T11DHAyyxS29GL512T11FHAyyxS29GL512T11TFAyyx110DHB,FHB,TFB03,04S29GL512T11DHByyxS29GL512T11FHByyxS29GL512T11TFByyx120DHB,FHB,TFBV3,V4S29GL512T12DHByyxS29GL512T12FHByyxS29GL512T12TFByyxDocumentNumber:002-00247Rev.
*LPage103of109S29GL01GT/S29GL512TTable54.
S29GL-TValidCombinationsforCFIVersion1.
5—AutomotiveGrade/AEC-Q100S29GL-TValidCombinations—AutomotiveGrade/AEC-Q100BaseOPNSpeed(ns)PackageandTemperatureModelNumberPackingTypeOrderingPartNumber(yy=ModelNumber,x=PackingType)S29GL01GT100,110DHA,FHA,TFA01,020,3S29GL01GT10DHAyyxS29GL01GT10FHAyyxS29GL01GT10TFAyyxS29GL01GT11DHAyyxS29GL01GT11FHAyyxS29GL01GT11TFAyyx110DHA,FHA,TFAV1,V2S29GL01GT11DHAyyxS29GL01GT11FHAyyxS29GL01GT11TFAyyx110DHB,FHB,TFB01,02S29GL01GT11DHByyxS29GL01GT11FHByyxS29GL01GT11TFByyx120DHB,FHB,TFBV1,V2S29GL01GT12DHByyxS29GL01GT12FHByyxS29GL01GT12TFByyxS29GL512T100DHA,FHA,TFA01,020,3S29GL512T10DHAyyxS29GL512T10FHAyyxS29GL512T10TFAyyx110DHA,FHA,TFAV1,V2S29GL512T11DHAyyxS29GL512T11FHAyyxS29GL512T11TFAyyx110DHB,FHB,TFB01,02S29GL512T11DHByyxS29GL512T11FHByyxS29GL512T11TFByyx120DHB,FHB,TFBV1,V2S29GL512T12DHByyxS29GL512T12FHByyxS29GL512T12TFByyxDocumentNumber:002-00247Rev.
*LPage104of109S29GL01GT/S29GL512TTheorderingpartnumberfortheGeneralMarketdeviceisformedbyavalidcombinationofthefollowing:S29GL01GT10DHI010PackingType0=Tray3=13"TapeandReelModelNumber(CFIVersion,VIO,andVCCRange)CFIVersion1.
303=VIO=VCC=2.
7to3.
6V,highestaddresssectorprotected04=VIO=VCC=2.
7to3.
6V,lowestaddresssectorprotectedV3=VIO=1.
65toVCC,VCC=2.
7to3.
6V,highestaddresssectorprotectedV4=VIO=1.
65toVCC,VCC=2.
7to3.
6V,lowestaddresssectorprotectedCFIVersion1.
501=VIO=VCC=2.
7to3.
6V,highestaddresssectorprotected02=VIO=VCC=2.
7to3.
6V,lowestaddresssectorprotectedV1=VIO=1.
65toVCC,VCC=2.
7to3.
6V,highestaddresssectorprotectedV2=VIO=1.
65toVCC,VCC=2.
7to3.
6V,lowestaddresssectorprotectedTemperatureRangeI=Industrial(-40°Cto+85°C)V=IndustrialPlus(-40°Cto+105°C)N=Extended(-40°Cto+125°C)A=Automotive,AEC-Q100Grade3(-40°Cto+85°C)B=Automotive,AEC-Q100Grade2(-40°Cto+105°C)PackageMaterialsSetA=NotLead(Pb)-FreeF=LeadFree(Pb-Free)H=LowHalogen,Pb-FreePackageTypeD=FortifiedBall-GridArrayPackage(LAE064)9mmx9mmF=FortifiedBall-GridArrayPackage(LAA064)13mmx11mmG=FortifiedBall-GridArrayPackage(VBU056)9mmx7mmT=ThinSmallOutlinePackage(TSOP)StandardPinoutSpeedOption10=100nsrandomaccesstime11=110nsrandomaccesstime12=120nsrandomaccesstime13=130nsrandomaccesstimeDeviceNumber/DescriptionS29GL01GT,S29GL512T3.
0VoltCore,withVIOOption,1024,512MegabitPage-ModeFlashMemory,Manufacturedon45nmMirrorBitEclipseProcessTechnologyDocumentNumber:002-00247Rev.
*LPage105of109S29GL01GT/S29GL512T15.
OtherResources15.
1CypressFlashMemoryRoadmapwww.
cypress.
com/Flash-Roadmap15.
2LinkstoSoftwarewww.
cypress.
com/software-and-drivers-cypress-flash-memory15.
3LinkstoApplicationNoteswww.
cypress.
com/cypressappnotesDocumentNumber:002-00247Rev.
*LPage106of109S29GL01GT/S29GL512TDocumentHistoryPageDocumentTitle:S29GL01GT/S29GL512T,1Gb(128MB),512Mb(64MB)GL-TMirrorBitEclipseFlashDocumentNumber:002-00247Rev.
ECNNo.
Orig.
ofChangeSubmissionDateDescriptionofChange**RYSU01/19/2015Initialrelease.
*ARYSU05/08/2015PerformanceSummary:TypicalProgramandEraseRatestable:updatedSectorErasefor40°Cto+85°CEmbeddedAlgorithmPerformanceTable:EmbeddedAlgorithmCharacter-istics(40°Cto+85°C)table:updatedSectorEraseTime,ChipErase,andMaxSingleWordProgrammingTimeDeviceIDandCommonFlashInterface(ID-CFI)ASOMap:CFISystemInterfaceStringtable:updated'(SA)+0023h'Data*BRYSU07/29/2015PerformanceSummary:TypicalProgramandEraseRatestable:UpdatedSectorErasefor40°Cto+105°CEmbeddedAlgorithmPerformanceTable:EmbeddedAlgorithmCharacter-istics(40°Cto+105°C)table:updatedSectorEraseTime,ChipErase,SingleWordProgrammingTime,BufferProgrammingTime,EffectiveWriteBufferProgramOperationperWord,andSectorProgrammingTime128kBDeviceIDandCommonFlashInterface(ID-CFI)ASOMap:CFISystemInterfaceStringtable:updatedDataforWordAddress(SA)+0023hand(SA)+0024h*C4892315BWHA08/24/2015UpdatedtoCypresstemplate.
*D4951321BWHA10/07/2015AddedanoteonErratainpage1.
AddedErrata.
*E5034419CRLE12/08/2015AddedExtendedTemperatureRangerelatedinformationinallinstancesacrossthedocument.
RemovednoteonErratainpage1.
UpdatedSection14.
OrderingInformationonpage100:UpdatedTable50:Updateddetailsin"PackageandTemperature"columnand"OrderingPartNumber"column.
RemovedErrata.
*F5167972NFB03/09/2016UpdatedSectionPerformanceSummaryonpage2:Replaced"PerformanceSummaryIndustrialPlusTemperatureRange"with"PerformanceSummaryExtendedTemperatureRange"intabletitle.
Replaced"200μA"with"215μA"in"–40°Cto+125°C"columncorrespondingto"Standby"operationin"MaximumCurrentConsumption"table.
UpdatedSection1.
ProductOverviewonpage4:UpdatedTable1:Correctedtyposin"*8"column.
UpdateddescriptionbelowTable1(Removed(A7=0orA7=1)from7thparagraphofthesection).
UpdatedSection3.
DataProtectiononpage12:UpdatedSection3.
4SectorProtectionMethodsonpage13:UpdatedSection3.
4.
9PasswordProtectionModeonpage17:UpdatedSection3.
4.
9.
1PPBPasswordProtectionModeonpage17:Updateddescription.
UpdatedSection11.
TimingSpecificationsonpage74:UpdatedSection11.
4ACCharacteristicsonpage77:UpdatedSection11.
4.
1AsynchronousReadOperationsonpage77:AddedTable46andTable47.
UpdatedSection12.
PhysicalInterfaceonpage93:UpdatedSection12.
264-BallFBGAonpage95:DocumentNumber:002-00247Rev.
*LPage107of109S29GL01GT/S29GL512T*F(Continued)5167972NFB03/09/2016UpdatedSection12.
2.
2PhysicalDiagram–LAE064onpage96:UpdatedFigure37(Updatedwiththelatestrevision).
UpdatedSection14.
OrderingInformationonpage100:Nochangeinpartnumbers.
UpdatedOrderingCodeDefinitionsbelowTable50.
*G5478677NFB10/27/2016Added"Automotive,AEC-Q100Grade3"and"Automotive,AEC-Q100Grade2"TemperatureRangerelatedinformationinallinstancesacrossthedocument.
Added"ECC"relatedinformationinallinstancesacrossthedocument.
UpdatedSection1.
ProductOverviewonpage4:UpdatedTable1.
UpdatedSection2.
AddressSpaceOverlaysonpage6:AddedSection2.
7ECCStatusASOonpage11.
UpdatedSection5.
EmbeddedOperationsonpage19:AddedSection5.
3AutomaticECConpage21.
UpdatedSection5.
6ErrorTypesandClearingProceduresonpage43:RemovedNote"Underworstcaseconditionsof90°C,VCC=2.
70V,100,000cycles,andarandomdatapattern.
"belowTable16,Table17andTable18.
RemovedNote"Dataretentionof20yearsisbasedon1Kerasecycles.
"belowTable16,Table17andTable18.
AddedSection6.
DataIntegrityonpage49.
UpdatedSection7.
SoftwareInterfaceReferenceonpage50:UpdatedSection7.
1CommandSummaryonpage50:UpdatedTable21:Added"ECCASO"CommandSequenceanditsdetails.
UpdatedTable22:Added"ECCASO"CommandSequenceanditsdetails.
UpdatedSection7.
2DeviceIDandCommonFlashInterface(ID-CFI)ASOMaponpage56:UpdatedTable27:Updateddetailsin"Description"columncorrespondingtoWordAddress"(SA)+0044h".
UpdatedSection10.
ElectricalSpecificationsonpage67:AddedSection10.
2ThermalResistanceonpage67.
UpdatedSection14.
OrderingInformationonpage100:Removed"ValidCombinations".
AddedSectionValidCombinations—Standardonpage100.
AddedSectionValidCombinations—AutomotiveGrade/AEC-Q100onpage102.
UpdatedOrderingCodeDefinitions.
UpdatedSection15.
OtherResourcesonpage105:Removed"Software".
Removed"ApplicationNotes".
Added"CypressFlashMemoryRoadmap".
Added"LinkstoSoftware".
Added"LinkstoApplicationNotes".
Updatedtonewtemplate.
*H5591622ECAO01/18/2017UpdatedSection10.
ElectricalSpecificationsonpage67:UpdatedSection10.
5DCCharacteristicsonpage70:UpdatedTable35:AddedminimumvaluesforVIL,VIH,VHH,VOH,VLKOparameters.
Updatedtonewtemplate.
*I5737432GNKK/SZZX05/24/2017CorrectedthenumberofcyclesmentionedforECCASOexitcommand.
UpdatedCypresslogo.
DocumentHistoryPage(Continued)DocumentTitle:S29GL01GT/S29GL512T,1Gb(128MB),512Mb(64MB)GL-TMirrorBitEclipseFlashDocumentNumber:002-00247Rev.
ECNNo.
Orig.
ofChangeSubmissionDateDescriptionofChangeDocumentNumber:002-00247Rev.
*LPage108of109S29GL01GT/S29GL512T*J6273945PRIT09/03/2018UpdatedSection1.
ProductOverviewonpage4:UpdatedTable1.
UpdatedSection7.
SoftwareInterfaceReferenceonpage50:UpdatedSection7.
2DeviceIDandCommonFlashInterface(ID-CFI)ASOMaponpage56:UpdatedTable26.
UpdatedSection10.
ElectricalSpecificationsonpage67:UpdatedSection10.
2ThermalResistanceonpage67:UpdatedTable31.
Updatedtonewtemplate.
*K6295545PRIT10/17/2018UpdatedSection10.
ElectricalSpecificationsonpage67:UpdatedSection10.
2ThermalResistanceonpage67:UpdatedTable31(ChangedvalueofThetaJAfrom46°C/Wto43.
5°C/Win"TS056"columncorrespondingto1G).
UpdatedSection14.
OrderingInformationonpage100:UpdatedTable51.
*L6506881PRIT04/05/2019UpdatedCopyrightinformation.
UpdatedpackagediagramsinSection12.
PhysicalInterfaceonpage93.
UpdatedTable2andTable3:UpdatedAddressRange(8-Bit)for128SectorSize.
UpdatedTable42throughTable47:ChangedParameterStdnametASHtotAHT.
RemovedtOEPandtOECparmeterspecifications.
DocumentHistoryPage(Continued)DocumentTitle:S29GL01GT/S29GL512T,1Gb(128MB),512Mb(64MB)GL-TMirrorBitEclipseFlashDocumentNumber:002-00247Rev.
ECNNo.
Orig.
ofChangeSubmissionDateDescriptionofChangeDocumentNumber:002-00247Rev.
*LRevisedApril05,2019Page109of109CypressSemiconductorCorporation,2015-2019.
ThisdocumentisthepropertyofCypressSemiconductorCorporationanditssubsidiaries("Cypress").
Thisdocument,includinganysoftwareorfirmwareincludedorreferencedinthisdocument("Software"),isownedbyCypressundertheintellectualpropertylawsandtreatiesoftheUnitedStatesandothercountriesworldwide.
Cypressreservesallrightsundersuchlawsandtreatiesanddoesnot,exceptasspecificallystatedinthisparagraph,grantanylicenseunderitspatents,copyrights,trademarks,orotherintellectualpropertyrights.
IftheSoftwareisnotaccompaniedbyalicenseagreementandyoudonototherwisehaveawrittenagreementwithCypressgoverningtheuseoftheSoftware,thenCypressherebygrantsyouapersonal,non-exclusive,nontransferablelicense(withouttherighttosublicense)(1)underitscopyrightrightsintheSoftware(a)forSoftwareprovidedinsourcecodeform,tomodifyandreproducetheSoftwaresolelyforusewithCypresshardwareproducts,onlyinternallywithinyourorganization,and(b)todistributetheSoftwareinbinarycodeformexternallytoendusers(eitherdirectlyorindirectlythroughresellersanddistributors),solelyforuseonCypresshardwareproductunits,and(2)underthoseclaimsofCypress'spatentsthatareinfringedbytheSoftware(asprovidedbyCypress,unmodified)tomake,use,distribute,andimporttheSoftwaresolelyforusewithCypresshardwareproducts.
Anyotheruse,reproduction,modification,translation,orcompilationoftheSoftwareisprohibited.
TOTHEEXTENTPERMITTEDBYAPPLICABLELAW,CYPRESSMAKESNOWARRANTYOFANYKIND,EXPRESSORIMPLIED,WITHREGARDTOTHISDOCUMENTORANYSOFTWAREORACCOMPANYINGHARDWARE,INCLUDING,BUTNOTLIMITEDTO,THEIMPLIEDWARRANTIESOFMERCHANTABILITYANDFITNESSFORAPARTICULARPURPOSE.
Nocomputingdevicecanbeabsolutelysecure.
Therefore,despitesecuritymeasuresimplementedinCypresshardwareorsoftwareproducts,Cypressshallhavenoliabilityarisingoutofanysecuritybreach,suchasunauthorizedaccesstooruseofaCypressproduct.
CYPRESSDOESNOTREPRESENT,WARRANT,ORGUARANTEETHATCYPRESSPRODUCTS,ORSYSTEMSCREATEDUSINGCYPRESSPRODUCTS,WILLBEFREEFROMCORRUPTION,ATTACK,VIRUSES,INTERFERENCE,HACKING,DATALOSSORTHEFT,OROTHERSECURITYINTRUSION(collectively,"SecurityBreach").
CypressdisclaimsanyliabilityrelatingtoanySecurityBreach,andyoushallandherebydoreleaseCypressfromanyclaim,damage,orotherliabilityarisingfromanySecurityBreach.
Inaddition,theproductsdescribedinthesematerialsmaycontaindesigndefectsorerrorsknownaserratawhichmaycausetheproducttodeviatefrompublishedspecifications.
Totheextentpermittedbyapplicablelaw,Cypressreservestherighttomakechangestothisdocumentwithoutfurthernotice.
Cypressdoesnotassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuitdescribedinthisdocument.
Anyinformationprovidedinthisdocument,includinganysampledesigninformationorprogrammingcode,isprovidedonlyforreferencepurposes.
Itistheresponsibilityoftheuserofthisdocumenttoproperlydesign,program,andtestthefunctionalityandsafetyofanyapplicationmadeofthisinformationandanyresultingproduct.
"High-RiskDevice"meansanydeviceorsystemwhosefailurecouldcausepersonalinjury,death,orpropertydamage.
ExamplesofHigh-RiskDevicesareweapons,nuclearinstallations,surgicalimplants,andothermedicaldevices.
"CriticalComponent"meansanycomponentofaHigh-RiskDevicewhosefailuretoperformcanbereasonablyexpectedtocause,directlyorindirectly,thefailureoftheHigh-RiskDevice,ortoaffectitssafetyoreffectiveness.
Cypressisnotliable,inwholeorinpart,andyoushallandherebydoreleaseCypressfromanyclaim,damage,orotherliabilityarisingfromanyuseofaCypressproductasaCriticalComponentinaHigh-RiskDevice.
YoushallindemnifyandholdCypress,itsdirectors,officers,employees,agents,affiliates,distributors,andassignsharmlessfromandagainstallclaims,costs,damages,andexpenses,arisingoutofanyclaim,includingclaimsforproductliability,personalinjuryordeath,orpropertydamagearisingfromanyuseofaCypressproductasaCriticalComponentinaHigh-RiskDevice.
CypressproductsarenotintendedorauthorizedforuseasaCriticalComponentinanyHigh-RiskDeviceexcepttothelimitedextentthat(i)Cypress'spublisheddatasheetfortheproductexplicitlystatesCypresshasqualifiedtheproductforuseinaspecificHigh-RiskDevice,or(ii)CypresshasgivenyouadvancewrittenauthorizationtousetheproductasaCriticalComponentinthespecificHigh-RiskDeviceandyouhavesignedaseparateindemnificationagreement.
Cypress,theCypresslogo,Spansion,theSpansionlogo,andcombinationsthereof,WICED,PSoC,CapSense,EZ-USB,F-RAM,andTraveoaretrademarksorregisteredtrademarksofCypressintheUnitedStatesandothercountries.
ForamorecompletelistofCypresstrademarks,visitcypress.
com.
Othernamesandbrandsmaybeclaimedaspropertyoftheirrespectiveowners.
S29GL01GT/S29GL512TSales,Solutions,andLegalInformationWorldwideSalesandDesignSupportCypressmaintainsaworldwidenetworkofoffices,solutioncenters,manufacturer'srepresentatives,anddistributors.
Tofindtheofficeclosesttoyou,visitusatCypressLocations.
ProductsArmCortexMicrocontrollerscypress.
com/armAutomotivecypress.
com/automotiveClocks&Bufferscypress.
com/clocksInterfacecypress.
com/interfaceInternetofThingscypress.
com/iotMemorycypress.
com/memoryMicrocontrollerscypress.
com/mcuPSoCcypress.
com/psocPowerManagementICscypress.
com/pmicTouchSensingcypress.
com/touchUSBControllerscypress.
com/usbWirelessConnectivitycypress.
com/wirelessPSoCSolutionsPSoC1|PSoC3|PSoC4|PSoC5LP|PSoC6MCUCypressDeveloperCommunityCommunity|Projects|Video|Blogs|Training|ComponentsTechnicalSupportcypress.
com/support