capacitance4444yy.com

2017MicrochipTechnologyInc.
DS20005689A-page1HV9150Features6Vto500VWideOutputVoltageRange2.
7VLowInputVoltage5WMaximumOutputPowerwithExternalMOSFETDriverBuilt-inChargePumpConverterfortheGateDriverProgrammableSwitchingFrequencyfrom40kHzto400kHzFourProgrammableDutyCyclesfrom50%to87.
5%FBReturnGroundSwitchforPowerSavingApplicationsBuilt-inDelayTimerforInternalProtectionNon-isolatedDC/DCConverterApplicationsPortableElectronicEquipmentMEMSPrintersGeneralDescriptionTheHV9150isahighoutputvoltageHystereticmodestep-upDC/DCcontrollerthathasabuilt-inchargepumpconverterandalinearregulatorforawiderangeofinputvoltage.
TheChargePumpConvertermodeisidealforbattery-poweredapplications.
Theinternalconvertercanprovideaminimumof5Vgatedriveroutputvoltage(atVIN=2.
7V)totheexternalN-channelMOSFET.
Therangeof2.
7Vto4.
5Vinputsupplyvoltageisidealforbattery-poweredapplications,suchasportableelectronicequipment.
Theinternallinearregulatorisselectedwhenahighersupplyvoltagerailisavailableinthesystem.
Afeedbackreturngroundpathswitchisalsointegratedintothedevicetominimizethequiescentcurrentduringthecontrollershutdown.
Thisfeatureprovidespowersavingsforenergy-criticalapplications.
Inaddition,abuilt-intimerisavailabletoprotecttheinternalcircuitandhelpdissipatetheenergyfromtheexternalhigh-voltagestoragecapacitor.
Thisdeviceisdesignedforsystemsrequiringhigh-voltageandlow-currentapplicationssuchasMEMSdevices.
PackageTypePadsareatthebottomofthepackage.
Centerheatslugisatgroundpotential.
SeeTable3-1forpininformation.
16-leadQFN(TopView)VDDGATEFB_RTNFBVCONTROLFREQ_ADJEXT_REFCTVLLGNDENCP_ENCCP1-CCP1+CCP2-CCP2+116High-VoltageOutputHysteretic-ModeStep-UpDC/DCControllerDelayOSC3xChargePumpConverterLDOVREF-+HystereticModeControllerVDDVDDVLLVLLVLLVLLCCP1+/-CCP2+/-VDDVLLGNDCTENFREQ_ADJVCONTROL(DutyCycleAdj)CP_ENGATEEXT_REFFP_RTNFBLDOModeCPModeHV9150DS20005689A-page22017MicrochipTechnologyInc.
FunctionalBlockDiagram2017MicrochipTechnologyInc.
DS20005689A-page3HV9150TypicalApplicationCircuitsCCP2±0.
22μFRFREQVOUT6.
0-500VVIN2.
7-4.
5VGNDR1R2LCTDelayOSCVREF3xChargePumpConverterLDOCCP1±0.
22μFVDD0.
22μFVLL1.
0μFCP_EN-+VLLVLLVLLVDDGATEEXT_REFFB_RTNFBENFREQ_ADJVCONTROL0V/3.
3VVDDLDOModeCPModeChargePump(CP)ModeLinearRegulator(LDO)ModeCCP2±RFREQVOUT15-500VVIN5.
0-12VGNDR1R2LCTDelayOSCVREF3xChargePumpConverterLDOCCP1±VDDVLLCP_EN-+VLLVLLVLLVDDGATEEXT_REFFB_RTNFBENFREQ_ADJVCONTROL0V/3.
3VVDD1.
0μFLDOModeCPModeHV9150DS20005689A-page42017MicrochipTechnologyInc.
1.
0ELECTRICALCHARACTERISTICSAbsoluteMaximumRatingsInputVoltageSupply,VLL0.
5Vto+5VChargePumpOutputVoltage,VDD.
0.
5Vto+13.
6VLogicInputLevels0.
5VtoVLL+0.
5VOperatingAmbientTemperature,TA25°Cto+125°CStorageTemperature,TS.
65°Cto+150°CContinuousPowerDissipation(Ona3x4-inchFR4PCBatTA=25°C):16-leadQFN.
3000mWNotice:Stressesabovethoselistedunder"AbsoluteMaximumRatings"maycausepermanentdamagetothedevice.
Thisisastressratingonly,andfunctionaloperationofthedeviceatthoseoranyotherconditionsabovethoseindicatedintheoperationalsectionsofthisspecificationisnotintended.
Exposuretomaximumratingconditionsforextendedperiodsmayaffectdevicereliability.
RECOMMENDEDOPERATINGCONDITIONSParameterSym.
Min.
Typ.
Max.
UnitConditionsInputVoltage(CPMode)VLL2.
7—4.
5VHigh-levelInputVoltageVIH0.
8VLL—VLLVLow-levelInputVoltageVIL0—0.
2VLLVDCELECTRICALCHARACTERISTICSElectricalSpecifications:Overrecommendedoperatingsupplyvoltagesandtemperatures;unlessotherwisenoted,TJ=25°C.
ParameterSym.
Min.
Typ.
Max.
UnitConditionsPOWERSUPPLYQuiescentVLLSupplyCurrent(EN='0')ILLQ(off)——2μAVLLSupplyCurrent(EN='1')GATE=NCILL(on)——1.
5mAfOSC=100kHz,VLL=4.
5VGATE=300pF——4VDDSupplyCurrent(EN='1')GATE=NCIDD(on)——1mAfOSC=100kHz,VDD=12.
6VGATE=300pF——2.
5QuiescentVDDSupplyCurrent(EN='0')IDDQ(off)——2μAHigh-levelLogicInputCurrentIIH——1μAVIH=VLLLow-levelLogicInputCurrentIIL——–1μAVIL=0VGateDriverOutputVoltageVLL=4.
5VGATE=NCGATE10.
2—12.
3VVLL=2.
7VGATE=NC5—6.
9LinearRegulatorOutputVoltageVLL(LDO)3—3.
6V2017MicrochipTechnologyInc.
DS20005689A-page5HV9150ACELECTRICALCHARACTERISTICSElectricalSpecifications:Overrecommendedoperatingsupplyvoltagesandtemperatures;unlessotherwisenotedTJ=25°C.
ParameterSym.
Min.
Typ.
Max.
UnitConditionsFEEDBACK(FB)InternalFeed-backReferenceVoltageAccuracyVREF1.
221.
251.
28VRange1.
21.
251.
3TA=–25to85°CInputBiasCurrentIBIAS——1μAEXT_REFisselected.
ExternalReferenceVoltageRangeEXT_REF0—VLL–1.
4VTriggerINTReference0—0.
12VDuringENpositivetriggeringTriggerEXTReference0.
5—VLL–1.
4VOn-resistance,RDSFB_RTN——500IO=2mABreakdownVoltage,BV——13.
5VGATEDRIVEROUTPUT(GATE)RiseTimetr——36nsCL=300pF,VDD=12VFallTimetf——12nsPull-upResistanceVDD=5VRUP——45IO=20mAVDD=12V——30IO=50mAPull-downResistanceVDD=5VRDOWN——15IO=20mAVDD=12V——12IO=50mAOscillatorFrequencyfGATE—fOSC—kHzCHARGEPUMPCONVERTERChargePumpOutputVoltageVDD53VLL–1.
812.
6V2.
7V≤VLL≤4.
5VCCP1=220nFCCP2=220nFCCP3=220nFOscillatorFrequencyAccuracyfOSC170195220kHzRFREQ=270k,VLL=3.
3VRange40—400OverRFREQrangeOscillatorFrequencyTolerancef—15—%50kHz≤fOSC≤250kHzDutyCycleAccuracyDC8687.
59%RFREQ=270kRange—0—%018VLL—50—%0.
22VLL38VLL—62.
5—%0.
42VLL58VLL—75—%0.
62VLL78VLL—87.
5—%0.
82VLLFrequencyAdjustmentResistorRFREQ120k—1.
2MMaximumChargePumpOutputResistancePull-upRCP——20VLL=2.
7V,IO=10mAPull-down——20HV9150DS20005689A-page62017MicrochipTechnologyInc.
FIGURE1-1:DutyCycleSelectionHysteresisatVCONTROLPinat25°C.
OutputRippleatVDDVRIPPLE——100mV2.
7V≤VLL≤4.
5VfOSC=200kHzCCP1=220nFCCP2=220nFCCP3=220nFCGATE=300pFBW=20MHzDELAYTIMERShutdownDelayTimertDELAY—240—msCT=1μFTEMPERATURESPECIFICATIONSParameterSym.
Min.
Typ.
Max.
UnitConditionsTEMPERATURERANGEOperatingAmbientTemperatureTA–25—+125°CStorageTemperatureTS–65—+150°CPACKAGETHERMALRESISTANCE16-leadQFNJA—33—°C/W1009080706050403020100VCONTROLfromMaxtoMinVCONTROLfromMintoMaxPercentageofVLL82%62%42%22%78%58%38%18%87.
5%DutyCycle75%DutyCycle62.
5%DutyCycle50%DutyCycle0%DutyCycle87.
5%DutyCycle75%DutyCycle62.
5%DutyCycle50%DutyCycle0%DutyCycleACELECTRICALCHARACTERISTICS(CONTINUED)ElectricalSpecifications:Overrecommendedoperatingsupplyvoltagesandtemperatures;unlessotherwisenotedTJ=25°C.
ParameterSym.
Min.
Typ.
Max.
UnitConditions2017MicrochipTechnologyInc.
DS20005689A-page7HV9150TimingWaveformsInitialpowerupXQWV"*GZVaTGH+XQWV"*KPVaTGH+2XXKJXKNXQWVGPFIGURE1-2:EnablingtousetheExternalVoltageReference.
tDELAY2X2XXKJXKNXQWVHDaTVPGPFIGURE1-3:DelayTimeatFB_RTN.
VIN=4.
5VVIN=2.
7VFIGURE1-4:VCPNoise.
HV9150DS20005689A-page82017MicrochipTechnologyInc.
2.
0TYPICALPERFORMANCECURVES35302520151050050100150200250300350Time(ns)LoadCapacitance(pF)Risetimetr,VDD=11V(CPmode)Falltimetf,VDD=11V(CPmode)Risetimetr,VDD=5V(LDOmode)Falltimetf,VDD=5V(LDOmode)Note:Thegraphsandtablesprovidedfollowingthisnoteareastatisticalsummarybasedonalimitednumberofsamplesandareprovidedforinformationalpurposesonly.
Theperformancecharacteristicslistedhereinarenottestedorguaranteed.
Insomegraphsortables,thedatapresentedmaybeoutsidethespecifiedoperatingrange(e.
g.
outsidespecifiedpowersupplyrange)andthereforeoutsidethewarrantedrange.
FIGURE2-1:GateDriverRiseTime(tr)andFallTime(tf)vs.
LoadCapacitanceat25°C.
100010010101001000Frequency(kHz)RFREQ(kΩ)(VIN=3.
3Vat25OC)FIGURE2-2:fGATEvs.
RFREQ.
1001010.
110100100010000Capacitance(F)Delay(ms)FIGURE2-3:CTCapacitorValuevs.
DelayTimeat25°C.
12.
011.
010.
09.
08.
07.
06.
02.
53.
03.
54.
04.
55.
0ChargePumpOutputVoltageVDD(V)InputVoltageVLL(V)CL=100pFCL=220pFCL=330pFFIGURE2-4:ChargePumpOutputVoltagevs.
InputVoltageat25°C.
12111098765050100150200250300350OutputVoltageVDD(V)LoadCapacitance(pF)(fGATE=100kHz,CCP1=CCP2=0.
22F,CVDD=1.
0F)VLL=4.
5VVLL=3.
6VVLL=3.
3VVLL=2.
7VFIGURE2-5:ChargePumpOutputVoltagevs.
LoadCapacitanceat25°C.
10110099989796234567891011121314Frequency(kHz)VLLInputVoltage(V)LDOmodeCPmode(Gateoutputloadcapacitance=330pF,RFREQ=255kΩ@25OC)FIGURE2-6:GateDriverSwitchingFrequencyvs.
VLLInputVoltage.
2017MicrochipTechnologyInc.
DS20005689A-page9HV91503.
0PINDESCRIPTIONThedetailsonthepinsofHV915016-leadQFNarelistedonTable3-1.
RefertoPackageTypeforthelocationofpins.
TABLE3-1:PINFUNCTIONTABLEPinNumberPinNameDescription1VLLInputsupplyvoltage2GNDGroundconnection3ENEnable4CP_ENChargepump/LDOenableinput5VCONTROLDutycycleadjustmentvoltagecontrolinput6FREQ_ADJFrequencyadjustment7EXT_REFExternalreferencevoltageinput8CTTimingcapacitor9FBFeedbackinputvoltage10FB_RTNFeedbackreturn11GATEGatecontroloutput12VDDChargepumpoutputvoltage13CCP2+Chargepumpstoragecapacitor#2plusterminal14CCP2–Chargepumpstoragecapacitor#2minusterminal15CCP1+Chargepumpstoragecapacitor#1plusterminal16CCP1–Chargepumpstoragecapacitor#1minusterminalCenterPadSubstrateconnection(atgroundpotential)HV9150DS20005689A-page102017MicrochipTechnologyInc.
4.
0FUNCTIONALDESCRIPTIONFollowthestepsinTable4-1topowerupandpowerdowntheHV9150.
TABLE4-1:POWER-UPANDPOWER-DOWNSEQUENCEPower-upPower-downStepDescriptionStepDescription1Connectground.
1Removeallinputs.
2ApplyVIN.
2RemoveVIN.
3Setallinputstoaknownstate.
3Disconnectground.
4.
1HystereticModeControllerAHystereticmodecontrollerconsistsofanoscillator,avoltagereference,acomparatorandadriver.
Boththeinternaloscillatorandthedutycycleofthegatedriverarerunningatafixedrate.
Asthisdeviceisdesignedforastep-upconversion,apulsetrainisusedtocontroltheswitchofaclassicalswitchingboostconverter.
Thepulsetrainisgatedbytheoutputofthecomparator,whichcomparesthefeedbackoftheoutputvoltagewiththevoltagereference.
Iftheoutputvoltagereachesthetargetvoltage,thecomparatorwillturnoffthepulsetrain.
Whentheoutputvoltagedropsbelowthetargetvoltage,thecomparatorwillpassthepulsetraintotheswitchandstarttheinductorchargingcycle.
TheadvantageofthisHystereticmodecontrollerisitsstabilityandsimpleoperation.
ThediagraminFigure4-1showsaHystereticModecontrollerandaclassicalboostconverter.
XQWVXKPJ{uvgtgvke"OqfgEqpvtqnngtFIGURE4-1:AHystereticModeControllerandaClassicalBoostConverter.
4.
2InternalOscillatorThisdevicehasaninternaloscillatorwhichgeneratesthereferenceclockfortheHystereticmodecontroller.
Thecontrollerisrunningathalfofthefrequencyoftheinternaloscillator.
ThisoscillatorispoweredbytheVLLpowersupplypin.
ThefrequencyoftheoscillatorissetbytheexternalresistorRFREQ,andthisfrequencyisinverselyproportionaltothevalueofRFREQ.
ItscharacteristicisshowninFigure2-2,fGATEvs.
RFREQdiagram,wherefGATE=1/2fOSC.
SeeEquation4-1.
EQUATION4-1:fOSC14RFREQC-=Where:C=4.
75pF4.
3VoltageReference(VREF)Thevoltagereferenceisusedbythecomparatortocompareitwiththefeedbackvoltageandtheboostconverteroutput.
Thisdeviceprovidestheoptionsofusingeitheritsinternalvoltagereferenceoranexternalvoltagereference.
Theinternalvoltagereferenceprovidesastable1.
25Vwithatoleranceof±2.
5%.
Withtheuseof±1%tolerancefeedbackresistors,theoutputcanbeachievedwithatoleranceof±4.
5%.
Inordertousetheinternalvoltagereference,theEXT_REFpinmustbeconnectedtoground.
Iftheoutputvoltageoftheboostconverterisrequiredtohavehighprecisionandtighttolerance,theexternalvoltagereferencecanbeusedtoachievethatpurpose.
Theexternalreferencevoltagemustbebetween0.
5VandVLL–1.
4VandconnectedtotheEXT_REFpin.
Asinglelow-to-hightransitionmustbepresentedattheENpintotriggerthedevicetoselectanexternalvoltagereference.
Ifnoenablecontrolsignalisavailableintheapplication,thissignalcanbeeasilymimickedbyasimpleRCcircuit.
SeeFigure4-2.
GNDVINEXT_REFEXT_REFGNDVoltageReferenceInternalExternal2017MicrochipTechnologyInc.
DS20005689A-page11HV9150FIGURE4-2:VoltageConnectionReference.
4.
4GateDriver(Gate)TheMOSFETgatedriverofthiscontrollerisespeciallydesignedtodrivethegateoftheexternalMOSFETupto12V.
Ahighpulsevoltagewillhelpminimizetheon-resistanceoftheexternalMOSFETtransistor.
Aloweron-resistanceimprovestheoverallefficiencyandheatdissipation.
ThisgatedriverispoweredbythesupplyvoltageVDDwhichcanbegeneratedbyeithertheinternalchargepumpconverter(CPmode)ortheexternalpowersupply(LDOmode),dependingontheavailablevoltagesupplyrailoftheapplication.
SeeTypicalApplicationCircuits.
4.
5ChargePumpConverter(CPMode)A3Xchargepumpconverterisintegratedintothisdevicetoprovidea5Vto12Vrailforthegatedriver.
(SeeFigure4-3.
)ItcanbeactivatedbysettingCP_ENtoground.
A3.
3Vsupplyismorecommonandeasilyavailablefordigitallogicsystems.
However,thisvoltagelevelislessdesirablefordrivingahigh-voltageMOSFETtoobtainaloweron-resistance,whichimprovesefficiency.
Toreducethenumberofsupplyrailsusedinthesystem,aninternaltwo-stagechargepumpconverterisadded,whichcanboostthe3.
3Vsupplyvoltageto8V.
Comparedtoa3.
3Vgatedriver,an8Vgatedriveroutputwillsubstantiallyimprovetheon-resistanceoftheexternalMOSFET.
Thechargepumpinputcanoperatewithaninputvoltagefrom2.
7Vto4.
5V.
ItsinputandoutputareconnectedtotheVLLandVDDpins,respectively.
XFFXNNQUEFIGURE4-3:A3XChargePumpConverter.
4.
6LinearRegulator(LDOMode)Insomeapplications,efficiencymaybeakeyfactor,andhighervoltagerailssuchas5V,6V,9Vor12Vmaybeavailableinthesystem.
Theinternalchargepumpconvertercannotoperatewiththesevoltagelevelsbecauseofthemaximumoutputvoltagelimitofthechargepumpconverter.
Atthesametime,thesevoltagelevelsarehighenoughtoprovideadequatesupplyforthegatedriver.
Underthiscircumstance,aninternallinearregulatorisusedtoreplacethechargepumpconverter.
Thislinearregulatorinputcanacceptvoltagefrom5Vto12Vandgeneratea3.
3Voutputtosupplytheinternalcircuit.
ThislinearregulatorcanbeactivatedbysettingCP_ENtoVLL.
InascenariowhenthedeviceisoperatinginLDOmodeandinShutdownstate(EN='0'),thevoltageatVLLisundefined.
Towakeupthecontrollerdevice,avoltageabove2.
7Vhastobepresentedattheenablepin(EN).
4.
7FBGroundReturnSwitch(FB_RTN)AnyDC/DCcontrollerrequiresfeedbackfromtheoutputtomonitoritsoperationsothatitcanregulateitsoutputaccordingly.
Asimpleresistornetworkisusedinconjunctionwithafeedbackgroundswitchasafeedbackpath.
Thepurposeofthisfeedbackgroundswitchistosavepowerconsumedbythefeedbackresistornetworkwhenthecontrollerisdisabled.
Thisfunctionisquiteusefulforpowersavingespeciallyforbattery-operatedapplications.
4.
8ShutdownTimerandTimingCapacitor(CT)Ashutdowntimerisalsointegratedintothecontrollerforsafetypurposes.
Whenthecontrollershutsdownfromitsnormaloperation,theconverter'sinitialoutputisstillatitshighlevel.
Ifthefeedbackgroundreturnswitchisdisabledatthesametime,acurrentpathiscreatedfromtheoutputviathefeedbackresistorandtheinternalprotectionclampingdiodeattheFBpin.
(SeeFigure4-4.
)DependinguponthevalueoftheFBresistor,thismomentarilyconductingcurrentcanbehighenoughtodamagethisclampingdiode.
Toavoidthispotentialproblem,atimerisaddedtothedisablefunctiontokeepthefeedbackgroundswitchtoonpositionforashortperiodoftime.
Thison-timedurationiscontrolledbyanexternalcapacitorCT.
Thelargerthecapacitorvalueis,thelongertheon-timeis.
ItscharacteristicisshowninFigure2-3.
HV9150DS20005689A-page122017MicrochipTechnologyInc.
FIGURE4-4:VOUT0V/3.
3VDelayCTGNDFB_RTNFBENR2R1InternalProtectionDiodeInternalProtectionDiodeatFBPin.
4.
9HystereticControllerEnableThecontrollerenablepin(EN),servestwomainpurposes.
Themostobviousfunctionistoturnonandoffthecontroller,andtheotherfunctionistoactasatriggertoactivatethedevicetoacceptexternalvoltagereference.
Foranyapplicationsrequiringahighlyprecisevoltagereference,anexternalvoltagereferenceshouldbeused.
Toactivatethedevicetoaccepttheexternalvoltagereference,alow-to-hightransitionhastoappearattheENpinwhilethevoltageattheEXT_REFpinisabove0.
5V.
Ifthesystemlacksenablefunctioncontrol,anRCcircuitcanbeusedtomimicthisfunctiontoallowtheexternalvoltagereference.
RefertoFigure4-5.
GNDEN3.
3V(min)RCFIGURE4-5:SimpleRCCircuitforENPin.
4.
10DutyCycleControl(VCONTROL)TheinputvoltageattheVCONTROLpinmanagesthedutycycleoftheinternaloscillatoroutputtothegatedriver.
AllinternalcomparatorsarepoweredbytheVLLsupplyandalltheirinputthresholdvoltagesarereferencedtoVLLvoltage.
AvoltagedividerformedbythetwoexternalresistorsshowninFigure4-6canbeadjustedaccordinglytoselectthedesireddutycycleofthepulsesignaltothegatedriver.
SeeTable4-2.
TABLE4-2:DUTYCYCLESELECTIONVCONTROLDutyCycle0VLLto0.
18VLL0%0.
22VLLto0.
38VLL50%0.
42VLLto0.
58VLL62.
5%0.
62VLLto0.
78VLL75%0.
82VLLto1VLL87.
5%+-+-+-+-DutyCycle87.
5%VCONTROLVLLVLLDutyCycle75.
0%DutyCycle62.
5%DutyCycle50.
0%FIGURE4-6:DutyCycleControlCircuit.
2017MicrochipTechnologyInc.
DS20005689A-page13HV91504.
11DesignProcedureThereareseveralparametersthatauserneedstoconsiderfortheDC/DCconverterdesign.
Theinputvoltage,outputvoltageandoutputpowerrequirementareusuallydefinedatthebeginning.
Theotherparametersthatmaybeincludedare:operatingfrequency,inductorvalue,dutycycleandtheon-resistanceoftheMOSFET.
Thereissomedegreeofflexibilityindecidingthevaluesoftheseparameters.
Thefollowingprovidestheuserageneraldesignapproach:4.
11.
1STEP1SincethisDC/DCcontrollerdeviceisoperatinginaDiscontinuousConductionmode,determinetheinductanceandtheswitchingfrequencywithEquation4-2.
EQUATION4-2:Given:D=DutycycleR=LoadresistanceofthehighvoltageoutputVi=MinimuminputvoltageVo=OutputvoltageUnknown:L=InductancefGATE=DriverswitchingfrequencyWhere:VoVi2-----114D2K-++=K2LfGATER-=ThemaximumdutycyclecanbecomputedwithEquation4-3.
EQUATION4-3:DMAX1ViVo------–=Then,theusercanselectanydutycyclelessthanDMAX.
Choosingthelargestpossiblesettingishighlyrecommended.
Tocompensateforthelimitedefficiency,theusercanaddtheefficiencyfactorintotheloadresistanceR.
Withtheaboveequation,theproductofLandfGATEisdetermined.
Theproductwillalsolimitthedesign.
4.
11.
2STEP2Thestandardinductorisusuallysoldinanincrementalinductancevalue,forexample,10H,22H,33Hor47H.
Theusercanchoosetheinductancebasedonthesizeoftheinductor,thepeakcurrent,themaximumoperatingfrequencyandtheDCresistance.
AfterthevalueofLisdecided,thegatedriverswitchingfrequencycanbecomputed.
TherequiredRFREQresistancecanbefoundinthefGATEvs.
RFREQdiagram.
(SeeFigure2-2.
)Next,theusermaycheckthepeakcurrentoftheinductorwithEquation4-4.
ThesaturationcurrentoftheinductormustbelargerthanIPEAK.
EQUATION4-4:IPEAKViDLfGATE-=4.
11.
3STEP3ThemostimportantfactorsindeterminingtheMOSFETarethebreakdownvoltage,thecurrentcapability,theon-resistance,theminimumVGSthresholdvoltageandtheinputcapacitance.
TheHV9150gatedriverisdesignedtodriveamaximumof300pFcapacitiveload.
Therefore,themaximuminputcapacitanceoftheexternalMOSFETshouldbelessthan300pF.
TheminimumbreakdownvoltagemustbelargerthantherequiredDC/DCconverteroutputvoltage.
Ifthebreakdownvoltageistoolow,theoutputwillneverreachtherequiredvoltageoutput.
AMOSFETwithhighon-resistancewilllimitthepeakcurrentchargingtheinductor.
TheusercanuseasimpleRLchargingcircuitequationtodetermineitsfinalchargingcurrent.
SeeEquation4-5.
EQUATION4-5:ILViRON-1DfGATE-RONL-–exp–=ItisrecommendedthatthecalculatedvalueofILiswithin95%oftheIPEAKcalculatedinEquation4-4.
Anon-resistanceoflessthan1isusuallyagoodstartingpoint.
Ifthefinalcircuitisshortontheoutputcurrentcapability,theusercandoanyorallofthefollowingtoboosttheoutput:1.
Increasethedutycycle.
2.
DecreasethefGATE.
3.
UseaMOSFETwithloweron-resistance.
HV9150DS20005689A-page142017MicrochipTechnologyInc.
5.
0PACKAGEMARKINGINFORMATION5.
1PackagingInformationLegend:XX.
.
.
XProductCodeorCustomer-specificinformationYYearcode(lastdigitofcalendaryear)YYYearcode(last2digitsofcalendaryear)WWWeekcode(weekofJanuary1isweek'01')NNNAlphanumerictraceabilitycodePb-freeJEDECdesignatorforMatteTin(Sn)*ThispackageisPb-free.
ThePb-freeJEDECdesignator()canbefoundontheouterpackagingforthispackage.
Note:IntheeventthefullMicrochippartnumbercannotbemarkedononeline,itwillbecarriedovertothenextline,thuslimitingthenumberofavailablecharactersforproductcodeorcustomer-specificinformation.
Packagemayornotincludethecorporatelogo.
3e3e16-leadQFNXXXXXXYWWNNNExampleH150724485Note:Forthemostcurrentpackagedrawings,seetheMicrochipPackagingSpecificationatwww.
microchip.
com/packaging.
2017MicrochipTechnologyInc.
DS20005689A-page15HV9150HV9150DS20005689A-page162017MicrochipTechnologyInc.
NOTES:2017MicrochipTechnologyInc.
DS20005689A-page17HV9150APPENDIXA:REVISIONHISTORYRevisionA(February2017)ConvertedSupertexDoc#DSFP-HV9150toMicrochipDS20005689AChangedthequantityofthe16-leadQFNK6packagefrom3000/Reelto3300/ReelMademinortextchangesthroughoutthedocu-mentHV9150DS20005689A-page182017MicrochipTechnologyInc.
PRODUCTIDENTIFICATIONSYSTEMToorderorobtaininformation,e.
g.
,onpricingordelivery,contactyourlocalMicrochiprepresentativeorsalesoffice.
Example:a)HV9150K6-G:High-VoltageOutputHysteretic-ModeStep-UpDC/DCController,16-leadVQFNPackage,3300/ReelPARTNO.
DeviceDevice:HV9150=High-VoltageOutputHysteretic-ModeStep-UpDC/DCControllerPackage:K6=16-leadVQFNEnvironmental:G=Lead(Pb)-free/RoHS-compliantPackageMediaType:(blank)=3300/ReelforaK6PackageXXPackage-X-XEnvironmentalMediaTypeOptions2017MicrochipTechnologyInc.
DS20005689A-page19Informationcontainedinthispublicationregardingdeviceapplicationsandthelikeisprovidedonlyforyourconvenienceandmaybesupersededbyupdates.
Itisyourresponsibilitytoensurethatyourapplicationmeetswithyourspecifications.
MICROCHIPMAKESNOREPRESENTATIONSORWARRANTIESOFANYKINDWHETHEREXPRESSORIMPLIED,WRITTENORORAL,STATUTORYOROTHERWISE,RELATEDTOTHEINFORMATION,INCLUDINGBUTNOTLIMITEDTOITSCONDITION,QUALITY,PERFORMANCE,MERCHANTABILITYORFITNESSFORPURPOSE.
Microchipdisclaimsallliabilityarisingfromthisinformationanditsuse.
UseofMicrochipdevicesinlifesupportand/orsafetyapplicationsisentirelyatthebuyer'srisk,andthebuyeragreestodefend,indemnifyandholdharmlessMicrochipfromanyandalldamages,claims,suits,orexpensesresultingfromsuchuse.
Nolicensesareconveyed,implicitlyorotherwise,underanyMicrochipintellectualpropertyrightsunlessotherwisestated.
TrademarksTheMicrochipnameandlogo,theMicrochiplogo,AnyRate,AVR,AVRlogo,AVRFreaks,BeaconThings,BitCloud,CryptoMemory,CryptoRF,dsPIC,FlashFlex,flexPWR,Heldo,JukeBlox,KEELOQ,KEELOQlogo,Kleer,LANCheck,LINKMD,maXStylus,maXTouch,MediaLB,megaAVR,MOST,MOSTlogo,MPLAB,OptoLyzer,PIC,picoPower,PICSTART,PIC32logo,ProchipDesigner,QTouch,RightTouch,SAM-BA,SpyNIC,SST,SSTLogo,SuperFlash,tinyAVR,UNI/O,andXMEGAareregisteredtrademarksofMicrochipTechnologyIncorporatedintheU.
S.
A.
andothercountries.
ClockWorks,TheEmbeddedControlSolutionsCompany,EtherSynch,HyperSpeedControl,HyperLightLoad,IntelliMOS,mTouch,PrecisionEdge,andQuiet-WireareregisteredtrademarksofMicrochipTechnologyIncorporatedintheU.
S.
A.
AdjacentKeySuppression,AKS,Analog-for-the-DigitalAge,AnyCapacitor,AnyIn,AnyOut,BodyCom,chipKIT,chipKITlogo,CodeGuard,CryptoAuthentication,CryptoCompanion,CryptoController,dsPICDEM,dsPICDEM.
net,DynamicAverageMatching,DAM,ECAN,EtherGREEN,In-CircuitSerialProgramming,ICSP,Inter-ChipConnectivity,JitterBlocker,KleerNet,KleerNetlogo,Mindi,MiWi,motorBench,MPASM,MPF,MPLABCertifiedlogo,MPLIB,MPLINK,MultiTRAK,NetDetach,OmniscientCodeGeneration,PICDEM,PICDEM.
net,PICkit,PICtail,PureSilicon,QMatrix,RightTouchlogo,REALICE,RippleBlocker,SAM-ICE,SerialQuadI/O,SMART-I.
S.
,SQI,SuperSwitcher,SuperSwitcherII,TotalEndurance,TSHARC,USBCheck,VariSense,ViewSpan,WiperLock,WirelessDNA,andZENAaretrademarksofMicrochipTechnologyIncorporatedintheU.
S.
A.
andothercountries.
SQTPisaservicemarkofMicrochipTechnologyIncorporatedintheU.
S.
A.
SiliconStorageTechnologyisaregisteredtrademarkofMicrochipTechnologyInc.
inothercountries.
GestICisaregisteredtrademarkofMicrochipTechnologyGermanyIIGmbH&Co.
KG,asubsidiaryofMicrochipTechnologyInc.
,inothercountries.
Allothertrademarksmentionedhereinarepropertyoftheirrespectivecompanies.
2017,MicrochipTechnologyIncorporated,AllRightsReserved.
ISBN:978-1-5224-1357-8NotethefollowingdetailsofthecodeprotectionfeatureonMicrochipdevices:MicrochipproductsmeetthespecificationcontainedintheirparticularMicrochipDataSheet.
Microchipbelievesthatitsfamilyofproductsisoneofthemostsecurefamiliesofitskindonthemarkettoday,whenusedintheintendedmannerandundernormalconditions.
Therearedishonestandpossiblyillegalmethodsusedtobreachthecodeprotectionfeature.
Allofthesemethods,toourknowledge,requireusingtheMicrochipproductsinamanneroutsidetheoperatingspecificationscontainedinMicrochip'sDataSheets.
Mostlikely,thepersondoingsoisengagedintheftofintellectualproperty.
Microchipiswillingtoworkwiththecustomerwhoisconcernedabouttheintegrityoftheircode.
NeitherMicrochipnoranyothersemiconductormanufacturercanguaranteethesecurityoftheircode.
Codeprotectiondoesnotmeanthatweareguaranteeingtheproductas"unbreakable.
"Codeprotectionisconstantlyevolving.
WeatMicrochiparecommittedtocontinuouslyimprovingthecodeprotectionfeaturesofourproducts.
AttemptstobreakMicrochip'scodeprotectionfeaturemaybeaviolationoftheDigitalMillenniumCopyrightAct.
Ifsuchactsallowunauthorizedaccesstoyoursoftwareorothercopyrightedwork,youmayhavearighttosueforreliefunderthatAct.
MicrochipreceivedISO/TS-16949:2009certificationforitsworldwideheadquarters,designandwaferfabricationfacilitiesinChandlerandTempe,Arizona;Gresham,OregonanddesigncentersinCaliforniaandIndia.
TheCompany'squalitysystemprocessesandproceduresareforitsPICMCUsanddsPICDSCs,KEELOQcodehoppingdevices,SerialEEPROMs,microperipherals,nonvolatilememoryandanalogproducts.
Inaddition,Microchip'squalitysystemforthedesignandmanufactureofdevelopmentsystemsisISO9001:2000certified.
QUALITYMANAGEMENTSYSTEMCERTIFIEDBYDNV==ISO/TS16949==DS20005689A-page202017MicrochipTechnologyInc.
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