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LM25066I,LM25066IAwww.
ti.
comSNVS824C–JUNE2012–REVISEDMARCH2013IntelNodeManagerCompliantSystemPowerManagementandProtectionICwithPMBusCheckforSamples:LM25066I,LM25066IA1FEATURESDESCRIPTIONWhiletheLM25066I/Aisfunctionallysimilartothe2FullyNodeManager2.
0and2.
5CompliantwithLM25066/A,theLM25066I/AisfullycomplianttoIntelI2C/SMBusinterfaceandPMBuscompliantNodeManager2.
0,2.
5andaddstheREAD_EINcommandstructureenergyaccumulatorfeature.
TheLM25066I/AInputvoltagerange:2.
9Vto17Vcombinesahigh-performancehot-swapcontrollerwithaPMBus1.
2compliantSMBus/I2CinterfacetoProgrammable25mVor46mVcurrentlimitaccuratelymeasure,controlandprotecttheelectricalthresholdoperatingconditionsofcriticalsystems.
TheRead_EINaccuratelymeasurestrueinputLM25066I/Acontinuouslysuppliesreal-timepower,powerviasimultaneoussamplingvoltage,current,temperature,andfaultdatatotheConfigurablecircuitbreakerprotectionforsystemmanagementhostviatheSMBusinterface.
hardshortsTheLM25066I/Acontrolblockincludesauniquehot-Configurableunder-andover-voltagelockoutsswaparchitecturethatprovidescurrentandpowerwithhysteresislimitingtoprotectsensitivecircuitryevenduringthemoststressfulconditions.
Afast-actingcircuitbreakerRealtimemonitoringofVIN,VOUT,IIN,PIN,VAUXpreventsdamageintheeventofashortcircuitonthewith12-bitresolutionand1kHzsamplingrateoutput.
Theinputunder-voltage,over-voltageCurrentmeasurementaccuracy:±1%hysteresis,insertiondelaytimeandfaultdetection(LM25066IA)andPowermeasurementtimeareallconfigurable.
Atemperaturemonitoringaccuracy:±2.
0%(LM25066IA)overtemperatureblockontheLM25066I/Ainterfaceswithalow-costAveragingofVIN,IIN,PIN,andVOUToverexternaldiodeforcontinuoustemperatureassessmentoftheexternalMOSFETorotherthermalprogrammableintervalrangingfrom0.
001to4sensitivecomponents.
ThePOWERGOODoutputsecondsprovidesafastalertwhentheinputand/oroutputProgrammableWARNandFAULTthresholdsvoltagesareoutsidetheirprogrammedrange.
withSMBAnotificationAccuratepowerreadingsareaccomplishedbyusingBlackboxcaptureoftelemetrymeasurementstheREAD_EINcommand.
AblackboxanddevicestatustriggeredbyWARNor(Telemetry/FaultSnapshot)functioncapturesandstorestelemetrydataanddevicestatusintheeventFAULTconditionofawarningorafault.
24-leadWQFNpackageAPPLICATIONSServerbackplanesystemsBasestationpowerdistributionsystemsSolidstatecircuitbreaker(eFuse)1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2Alltrademarksarethepropertyoftheirrespectiveowners.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2012–2013,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
Productionprocessingdoesnotnecessarilyincludetestingofallparameters.
LM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
ti.
comTypicalApplicationSchematicConnectionDiagramSolderexposedpadtoground.
TopViewWQFN-242SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013PinDescriptionsPinNameDescriptionApplicationsInformationNo.
PadExposedExposedpadofWQFNNointernalelectricalconnection.
Soldertothegroundplanetoreducethermalresistance.
Padpackage1ADR2SMBUSaddressline23-stateaddressline.
ShouldbeconnectedtoGND,VDD,orleftfloating.
2ADR1SMBUSaddressline13-stateaddressline.
ShouldbeconnectedtoGND,VDD,orleftfloating.
3ADR0SMBUSaddressline03-stateaddressline.
ShouldbeconnectedtoGND,VDD,orleftfloating.
4VDDInternalsub-regulatorInternallysub-regulated4.
5Vbiassupply.
Connecta1Fcapacitoronthispintogroundoutputforbypassing.
5CLCurrentlimitrangeConnectthispintoGNDtosetthenominalover-currentthresholdat25mV.
ConnectingCLtoVDDwillsettheover-currentthresholdtobe46mV.
6CBCircuitbreakerrangeThispinsetsthecircuitbreakerprotectionpointinrelationtotheover-currenttrippoint.
WhenconnectedtoGND,thispinwillsetthecircuitbreakerpointtobe1.
8timestheover-currentthreshold.
ConnectingthispintoVDDsetsthecircuitbreakertrippointtobe3.
6timestheover-currentthreshold.
7FBPowerGoodfeedbackAnexternalresistordividerfromOUTsetstheoutputvoltageatwhichthePGDpinswitches.
Thethresholdatthepinis1.
167V.
Aninternal24Acurrentsourceprovideshysteresis.
8RETRYFaultretryinputThispinconfiguresthepowerupfaultretrybehavior.
Whenthispinisgrounded,thedevicewillcontinuallytrytoengagepowerduringafault.
IfthepinisconnectedtoVDD,thedevicewilllatchoffduringafault.
9TIMERTimingcapacitorAnexternalcapacitorconnectedtothispinsetstheinsertiontimedelay,faulttimeoutperiodandrestarttiming.
10PWRPowerlimitsetAnexternalresistorconnectedtothispin,inconjunctionwiththecurrentsenseresistor(RS),setsthemaximumpowerdissipationallowedintheexternalseriespassMOSFET.
11PGDPowerGoodindicatorAnopendrainoutput.
ThisoutputishighwhenthevoltageattheFBpinisabove1.
167Vandtheinputsupplyiswithinitsunder-voltageandover-voltagethresholds.
Connectviaapullupresistortotheoutputrail(externalMOSFETsource)oranyothervoltagetobemonitored.
12OUTOutputfeedbackConnecttotheoutputrail(externalMOSFETsource).
InternallyusedtodeterminetheMOSFETVDSvoltageforpowerlimiting,andtomonitortheoutputvoltage.
13GATEGatedriveoutputConnecttotheexternalMOSFET'sgate.
14SENSECurrentsenseinputThevoltageacrossthecurrentsenseresistor(RS)ismeasuredfromVINtothispin.
IfthevoltageacrossRSreachesover-currentthreshold,theloadcurrentislimitedandthefaulttimeractivates.
15VINPositivesupplyinputAsmallceramicbypasscapacitorclosetothispinisrecommendedtosuppresstransientswhichoccurwhentheloadcurrentisswitchedoff.
16UVLO/ENUnder-voltagelockoutAnexternalresistordividerfromthesysteminputvoltagesetstheunder-voltageturn-onthreshold.
Aninternal23Acurrentsourceprovideshysteresis.
Theenablethresholdatthepinis1.
16V.
Thispincanalsobeusedforremoteshutdowncontrol.
17OVLOOver-voltagelockoutAnexternalresistordividerfromthesysteminputvoltagesetstheover-voltageturn-offthreshold.
Aninternal23Acurrentsourceprovideshysteresis.
Thedisablethresholdatthepinis1.
16V.
18GNDCircuitground19SDASMBusdatapinDatapinforSMBus.
20SCLSMBusclockClockpinforSMBus.
21SMBASMBusalertlineAlertpinforSMBus,activelow.
22VREFInternalReferenceInternallygeneratedprecision2.
73Vreferenceusedforanalogtodigitalconversion.
Connecta1Fcapacitoronthispintogroundforbypassing.
23DIODEExternaldiodeConnectthistoadiode-configuredNPNtransistorfortemperaturemonitoring.
24VAUXAuxiliaryvoltageinputAuxiliarypinallowsvoltagetelemetryfromanexternalsource.
Fullscaleinputof1.
16V.
Thesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
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comAbsoluteMaximumRatings(1)VIN,SENSEtoGND(2)-0.
3Vto24VGATE,FB,UVLO/EN,OVLO,PGDtoGND(2)-0.
3Vto20VOuttoGND-1to20VSCL,SDA,SMBA,CL,CB,ADR0,ADR1,ADR2,VDD,VAUX,DIODE,RETRYtoGND-0.
3Vto6VVINtoSENSE-0.
3Vto+0.
3VESDRating,HumanBodyModel(3)2kVStorageTemperature-65°Cto+150°CJunctionTemperature+150°C(1)AbsoluteMaximumRatingsindicatelimitsbeyondwhichdamagetothedevicemayoccur.
OperatingRatingsindicateconditionsforwhichthedeviceisintendedtobefunctional.
(2)TheGATEpinvoltageistypically7.
5VaboveVINwhentheLM25066I/Aisenabled.
Therefore,theAbsoluteMaximumRatingof24VforVINandSENSEapplyonlywhentheLM25066I/AisdisabledorforamomentarysurgetothatvoltagesincetheAbsoluteMaximumRatingfortheGATEpinis20V.
(3)Thehumanbodymodelisa100pFcapacitordischargedthrougha1.
5kresistorintoeachpin.
OperatingRatingsVIN,SENSE,OUTvoltage2.
9Vto17VVDD2.
9Vto5.
5VJunctionTemperature40°Cto+125°CElectricalCharacteristicsLimitsinstandardtypeareforTJ=25°Conly;limitsinboldfacetypeapplyoverthejunctiontemperature(TJ)rangeof-40°Cto+85°Cunlessotherwisestated.
MinimumandMaximumlimitsarespecifiedthroughtest,design,orstatisticalcorrelation.
TypicalvaluesrepresentthemostlikelyparametricnormatTJ=25°C,andareprovidedforreferencepurposesonly.
Unlessotherwisestatedthefollowingconditionsapply:VIN=12V.
See(1)andSymbolParameterConditionsMinTypMaxUnitInput(VINPin)IIN-ENInputCurrent,enabledUVLO=2VandOVLO=0.
7V5.
88mAPORPowerOnResetthresholdatVINVINincreasing2.
62.
8VPORHYSPORENHysteresisVINdecreasing150mVVDDRegulator(VDDpin)VDDIVDD=5mA,VIN=12V4.
34.
54.
7VIVDD=5mA,VIN=4.
5V3.
53.
94.
3VVDDILIMVDDCurrentLimit2545mAUVLO/EN,OVLOPinsUVLOTHUVLOthresholdVUVLOFalling1.
1471.
161.
173VUVLOHYSUVLOhysteresiscurrentUVLO=1V182328AUVLODELUVLOdelayDelaytoGATEhigh8sDelaytoGATElow20UVLOBIASUVLObiascurrentUVLO=3V1AOVLOTHOVLOthresholdVOVLOrising1.
1411.
161.
185VOVLOHYSOVLOhysteresiscurrentOVLO=1V-28-23-18AOVLODELOVLOdelayDelaytoGATEhigh19sDelaytoGATElow9OVLOBIASOVLObiascurrentOVLO=1V1APowerGood(PGDpin)PGDVOLOutputlowvoltageISINK=2mA2560mVPGDIOHOffleakagecurrentVPGD=17V1APGDDELAYPowerGoodDelayVFBtoVPG115ns(1)Currentoutofapinisindicatedasanegativevalue.
4SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
ti.
comSNVS824C–JUNE2012–REVISEDMARCH2013ElectricalCharacteristics(continued)LimitsinstandardtypeareforTJ=25°Conly;limitsinboldfacetypeapplyoverthejunctiontemperature(TJ)rangeof-40°Cto+85°Cunlessotherwisestated.
MinimumandMaximumlimitsarespecifiedthroughtest,design,orstatisticalcorrelation.
TypicalvaluesrepresentthemostlikelyparametricnormatTJ=25°C,andareprovidedforreferencepurposesonly.
Unlessotherwisestatedthefollowingconditionsapply:VIN=12V.
See(1)andSymbolParameterConditionsMinTypMaxUnitFBPinFBTHFBThresholdVFBrising1.
1411.
1671.
19VFBHYSFBHysteresisCurrent-31-24-18AFBLEAKOffLeakageCurrentVFB=1V1APowerLimit(PWRPin)PWRLIMPowerlimitsensevoltage(VIN-SENSE)SENSE-OUT=12V,RPWR=25k912.
515mVIPWRPWRpincurrentVPWR=2.
5V-10ARSAT(PWR)PWRpinimpedancewhendisabledUVLO=0.
7V180GateControl(GATEPin)IGATESourcecurrentNormaloperation-28-22-16AFaultSinkcurrentUVLO=1V1.
522.
5mAPORCircuitBreakersinkcurrentVIN-SENSE=150mVorVIN820.
3VOUTPinIOUT-ENOUTbiascurrent,enabledOUT=VIN,normaloperation16AIOUT-DISOUTbiascurrent,disabled(2)Disabled,OUT=0V,SENSE=VIN-12ACurrentLimitVCLThresholdvoltageCL=GND22.
52527.
5mVCL=GND,TJ=10°Cto85°C232527CL=VDD414652tCLResponsetimeVIN-SENSEsteppedfrom0mVto80mV1.
2sISENSESENSEinputcurrentEnabled,SENSE=OUT33ADisabled,OUT=0V46Enabled,OUT=0V45CircuitBreakerVCBThresholdvoltagex1.
8VIN-SENSE,CL=GND,CB=GND354555mVCB:CLRatioCB=GND1.
61.
82VCBThresholdvoltagex3.
6VIN-SENSE,CL=GND,CB=VDD7090110mVCB:CLRatioCB=VDD3.
13.
64tCBResponsetimeVIN-SENSEsteppedfrom0mVto1500.
61.
2smV,timetoGATElow,noloadTimer(TIMERpin)VTMRHUpperthreshold1.
541.
71.
85VVTMRLLowerthresholdRestartcycles0.
851.
01.
07VEndof8thcycle0.
3VRe-enablethreshold0.
3VITIMERInsertiontimecurrentTIMERpin=2V-8-5.
5-3ASinkcurrent,endofinsertiontime1.
41.
92.
4mAFaultdetectioncurrent-120-90-60AFaultsinkcurrent2.
8ADCFAULTFaultRestartDutyCycle0.
67%tFAULT_DELAYFaulttoGATElowdelayTIMERpinreachestheupperthreshold17s(2)OUTbiascurrent(disabled)duetoleakagecurrentthroughaninternal0.
9MresistancefromSENSEtoVOUT.
Copyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback5ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
ti.
comElectricalCharacteristics(continued)LimitsinstandardtypeareforTJ=25°Conly;limitsinboldfacetypeapplyoverthejunctiontemperature(TJ)rangeof-40°Cto+85°Cunlessotherwisestated.
MinimumandMaximumlimitsarespecifiedthroughtest,design,orstatisticalcorrelation.
TypicalvaluesrepresentthemostlikelyparametricnormatTJ=25°C,andareprovidedforreferencepurposesonly.
Unlessotherwisestatedthefollowingconditionsapply:VIN=12V.
See(1)andSymbolParameterConditionsMinTypMaxUnitInternalReferenceVREFReferenceVoltage2.
7032.
732.
757VADCandMUXResolution12BitsINLIntegralNon-LinearityADConly+/-1LSBtAQUIREAcquisition+ConversionTimeAnychannel100stRRAcquisitionRoundRobinTimeCycleallchannels1msIINFSRCurrentinputfullscalerangeCL=GND30.
2mVCL=VDD60.
4mVIINLSBCurrentinputLSBCL=GND7.
32VCL=VDD14.
64VVAUXFSRVAUXinputfullscalerange1.
16VVAUXLSBVAUXinputLSB283.
2VVINFSRInputvoltagefullscalerange18.
7VVINLSBInputvoltageLSB4.
54mV6SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
ti.
comSNVS824C–JUNE2012–REVISEDMARCH2013ElectricalCharacteristics(continued)LimitsinstandardtypeareforTJ=25°Conly;limitsinboldfacetypeapplyoverthejunctiontemperature(TJ)rangeof-40°Cto+85°Cunlessotherwisestated.
MinimumandMaximumlimitsarespecifiedthroughtest,design,orstatisticalcorrelation.
TypicalvaluesrepresentthemostlikelyparametricnormatTJ=25°C,andareprovidedforreferencepurposesonly.
Unlessotherwisestatedthefollowingconditionsapply:VIN=12V.
See(1)andSymbolParameterConditionsMinTypMaxUnitTelemetryAccuracyLM25066IAIINACCInputCurrentAccuracyVIN–SENSE=25mV,CL=GND-1+1%TJ=10°Cto85°CVIN–SENSE=25mV,CL=GND-1.
2+1VIN–SENSE=50mV,CL=VDD-1.
8+1.
8VIN-SENSE=5mV,CL=GND-5+5TJ=10°Cto85°CVACCVAUX,VIN,VOUTAccuracyVIN,VOUT=12V-1+1%VAUX=1VTJ=10°Cto85°CVIN,VOUT=12V-1+1.
2VAUX=1VPINACCInputPowerAccuracyVIN=12V,VIN–SENSE=25mV,-2.
0+2.
0%CL=GNDTelemetryAccuracyLM25066IIINACCInputCurrentAccuracyVIN–SENSE=25mV,CL=GND-2.
7+2.
4%VIN–SENSE=25mV,CL=GND-2.
4+2.
4TJ=10°Cto85°CVACCVAUX,VIN,VOUTAccuracyVIN,VOUT=12V-1.
6+1.
4%VAUX=1VVIN,VOUT=12V-1.
4+1.
4VAUX=1VTJ=10°Cto85°CPINACCInputPowerAccuracyVIN=12V,VIN–SENSE=25mV,-3.
0+3.
0%CL=GNDRemoteDiodeTemperatureSensorTACCTemperatureAccuracyUsingLocalTA=10°Cto85°C210°CDiodeRemoteDiodeResolution9bitsIDIODEExternalDiodeCurrentSourceHighlevel250300ALowlevel9.
4ADiodeCurrentRatio26PMBusPinThresholds(SMBA,SDA,SCL)VILData,ClockInputLowVoltage0.
8VVIHData,ClockInputHighVoltage2.
15.
5VVOLDataOutputLowVoltageIPULLUP=4mA00.
4VILEAKInputLeakageCurrentSDA,SMBA,SCL=5V1ACLPinCapacitanceSDA,SCL5pFConfigurationPinThresholds(CB,CL,RETRY)VIHThresholdVoltage3VILEAKInputLeakageCurrentCL,CB,RETRY=5V1mAThermal(3)θJAJunctiontoAmbient42.
3°C/WθJCJunctiontoCase9.
5°C/W(3)Junction-to-ambientthermalresistanceishighlyapplicationandboardlayoutdependent.
Specifiedthermalresistancevaluesforthepackagespecifiedisbasedona4-layer,4"x3",2/1/1/2oz.
CuboardasperJEDECstandardsisused.
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comTypicalPerformanceCharacteristicsUnlessotherwisespecifiedthefollowingconditionsapply:TJ=25°C,VIN=12V.
Allgraphsshowjunctiontemperature.
VINPinCurrentSENSEPinCurrent(Enabled)Figure1.
Figure2.
SENSEPinCurrent(Disabled)OUTPinCurrent(Enabled)Figure3.
Figure4.
OUTPinCurrent(Disabled)GATEPinVoltageFigure5.
Figure6.
8SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013TypicalPerformanceCharacteristics(continued)Unlessotherwisespecifiedthefollowingconditionsapply:TJ=25°C,VIN=12V.
Allgraphsshowjunctiontemperature.
GATEPinSourceCurrentPowerLimitThresholdFigure7.
Figure8.
PGDLowVoltageUVLOThresholdFigure9.
Figure10.
UVLOHysteresisCurrentFBThresholdFigure11.
Figure12.
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comTypicalPerformanceCharacteristics(continued)Unlessotherwisespecifiedthefollowingconditionsapply:TJ=25°C,VIN=12V.
Allgraphsshowjunctiontemperature.
OVLOThresholdOVLOHysteresisFigure13.
Figure14.
FBPinHysteresisCurrentLimitThresholdFigure15.
Figure16.
CurrentLimitThresholdCircuitBreakerThreshold(CL=VDD)Figure17.
Figure18.
10SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013TypicalPerformanceCharacteristics(continued)Unlessotherwisespecifiedthefollowingconditionsapply:TJ=25°C,VIN=12V.
Allgraphsshowjunctiontemperature.
ReferenceVoltageStartup(InsertionDelay)Figure19.
Figure20.
Startup(ShortcircuitVOUT)Startup(5ALoad)Figure21.
Figure22.
Startup(UVLO,OVLO)Startup(PGOOD)Figure23.
Figure24.
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ti.
comTypicalPerformanceCharacteristics(continued)Unlessotherwisespecifiedthefollowingconditionsapply:TJ=25°C,VIN=12V.
Allgraphsshowjunctiontemperature.
CurrentLimitEvent(CL=GND)CircuitBreakerEvent(CL=CB=GND)Figure25.
Figure26.
RetryEvent(Retry=GND)LatchOff(Retry=VDD)Figure27.
Figure28.
IINMeasurementAccuracyPINMeasurementAccuracy(VIN-SENSE=25mV)(VIN-SENSE=25mV)Figure29.
Figure30.
12SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013BLOCKDIAGRAMCopyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback13ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
ti.
comFUNCTIONALDESCRIPTIONTheinlineprotectionfunctionalityoftheLM25066I/Aisdesignedtocontrolthein-rushcurrenttotheloaduponinsertionofacircuitcardintoalivebackplaneorother"hot"powersource,therebylimitingthevoltagesagonthebackplane'ssupplyvoltageandthedV/dtofthevoltageappliedtotheload.
Effectsonothercircuitsinthesystemareminimized,preventingpossibleunintendedresets.
AcontrolledshutdownwhenthecircuitcardisremovedcanalsobeimplementedusingtheLM25066I/A.
Inadditiontoaprogrammablecurrentlimit,theLM25066I/AmonitorsandlimitsthemaximumpowerdissipationintheseriespassdevicetomaintainoperationwithinthedeviceSafeOperatingArea(SOA).
Eithercurrentlimitingorpowerlimitingforanextendedperiodoftimeresultsintheshutdownoftheseriespassdevice.
Inthisevent,theLM25066I/AcanlatchofforrepetitivelyretrybasedonthehardwaresettingoftheRETRYpin.
Oncestarted,thenumberofretriescanbesettonone,1,2,4,8,16,orinfinite.
Thecircuitbreakerfunctionquicklyswitchesofftheseriespassdeviceupondetectionofasevereover-currentcondition.
Programmableunder-voltagelockout(UVLO)andover-voltagelockout(OVLO)circuitsshutdowntheLM25066I/Awhenthesysteminputvoltageisoutsidethedesiredoperatingrange.
ThetelemetrycapabilityoftheLM25066I/Aprovidesintelligentmonitoringoftheinputvoltage,outputvoltage,inputcurrent,inputpower,temperature,andanauxiliaryinput.
TheLM25066I/Aalsoprovidesapeakcaptureoftheinputpowerandprogrammablehardwareaveragingoftheinputvoltage,current,power,andoutputvoltage.
WarningthresholdswhichtriggertheSMBApinmaybeprogrammedforinputandoutputvoltage,current,powerandtemperatureviathePMBusinterface.
Additionally,theLM25066I/AiscapableofdetectingdamagetotheexternalMOSFET,Q1.
Figure31.
TypicalApplicationCircuitPowerUpSequenceTheVINoperatingrangeoftheLM25066I/Ais+2.
9Vto+17V,withtransientcapabilityto+24V.
ReferringtoFigure31andFigure32,asthevoltageatVINinitiallyincreases,theexternalN-channelMOSFET(Q1)isheldoffbyaninternal190mApulldowncurrentattheGATEpin.
ThestrongpulldowncurrentattheGATEpinpreventsaninadvertentturn-onastheMOSFET'sgate-to-drain(Miller)capacitanceischarged.
Additionally,theTIMERpinisinitiallyheldatground.
WhentheVINvoltagereachesthePORthreshold,theinsertiontimebegins.
Duringtheinsertiontime,thecapacitorattheTIMERpin(CT)ischargedbya5.
5AcurrentsourceandQ1isheldoffbya2mApulldowncurrentattheGATEpinregardlessoftheinputvoltage.
TheinsertiontimedelayallowsringingandtransientsatVINtosettlebeforeQ1isenabled.
TheinsertiontimeendswhentheTIMERpin14SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013voltagereaches1.
7V.
CTisthenquicklydischargedbyaninternal1.
9mApulldowncurrent.
TheGATEpinthenswitchesonQ1whenVSYS,theinputsupplyvoltage,exceedstheUVLOthreshold.
IfVSYSisabovetheUVLOthresholdattheendoftheinsertiontime,Q1switchesonatthattime.
TheGATEpinchargepumpsources22AtochargethegatecapacitanceofQ1.
ThemaximumvoltageattheGATEpinwithrespecttogroundislimitedbyaninternal18.
8Vzenerdiode.
AsthevoltageattheOUTpinincreases,theLM25066I/AmonitorsthedraincurrentandpowerdissipationofMOSFETQ1.
Inrushcurrentlimitingand/orpowerlimitingcircuitsactivelycontrolthecurrentdeliveredtotheload.
Duringtheinrushlimitinginterval(t2inFigure32),aninternal90AfaulttimercurrentsourcechargesCT.
IfQ1'spowerdissipationandtheinputcurrentreducebelowtheirrespectivelimitingthresholdsbeforetheTIMERpinreaches1.
7V,the90AcurrentsourceisswitchedoffandCTisdischargedbytheinternal2.
8Acurrentsink(t3inFigure32).
ThePGDpinswitcheshighwhenFBexceedsitsrisingthresholdof1.
167V.
IftheTIMERpinvoltagereaches1.
7Vbeforeinrushcurrentlimitingorpowerlimitingceasesduringt2,afaultisdeclaredandQ1isturnedoff.
SeeFaultTimerandRestartforacompletedescriptionofthefaultmode.
TheLM25066I/AwillpulltheSMBApinlowaftertheinputvoltagehasexceededitsPORthresholdtoindicatethatthevolatilememoryanddevicesettingsareintheirdefaultstate.
TheCONFIG_PRESETbitwithintheSTATUS_MFR_SPECIFICregister(80h)indicatesdefaultconfigurationofwarningthresholdsanddeviceoperationandwillremainsetuntilaCLEAR_FAULTScommandisreceived.
Figure32.
PowerUpSequence(CurrentLimitOnly)Copyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback15ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
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comGateControlAchargepumpprovidesthevoltageattheGATEpintoenhancetheN-ChannelMOSFET'sgate.
Duringnormaloperatingconditions(t3in)Figure32)thegateofQ1isheldchargedbyaninternal22Acurrentsource.
ThevoltageattheGATEpin(withrespecttoground)islimitedbyaninternal18.
8Vzenerdiode.
Seethegraph"GATEPinVoltage"shownpreviously.
Sincethegate-to-sourcevoltageappliedtoQ1couldbeashighas18.
8Vduringvariousconditions,azenerdiodewiththeappropriatevoltageratingmustbeaddedbetweentheGATEandOUTpinsifthemaximumVGSratingoftheselectedMOSFETislessthan18.
8V.
Theexternalzenerdiodemusthaveaforwardcurrentratingofatleast190mA.
Whenthesystemvoltageisinitiallyapplied,theGATEpinisheldlowbya190mApulldowncurrent.
Thishelpspreventaninadvertentturn-onoftheMOSFETthroughitsdrain-gatecapacitanceastheappliedsystemvoltageincreases.
Duringtheinsertiontime(t1inFigure32)theGATEpinisheldlowbya2mApulldowncurrent.
ThismaintainsQ1intheoff-stateuntiltheendoft1,regardlessofthevoltageatVINorUVLO.
Followingtheinsertiontime(t2inFigure32),thegatevoltageofQ1iscontrolledtokeepthecurrentorpowerdissipationlevelfromexceedingtheprogrammedlevels.
Whileinthecurrentorpowerlimitingmode,theTIMERpincapacitorischarging.
IfthecurrentandpowerlimitingceasebeforetheTIMERpinreaches1.
7V,theTIMERpincapacitorthendischarges,andthecircuitbeginsnormaloperation.
IftheinrushlimitingconditionpersistssuchthattheTIMERpinreached1.
7Vduringt2,theGATEpinisthenpulledlowbythe190mApulldowncurrent.
TheGATEpinisthenheldlowuntileitherapowerupsequenceisinitiated(RETRYpintoVDD),oranautomaticretryisattempted(RETRYpintoGROUND).
SeeFaultTimerandRestart.
IfthesysteminputvoltagefallsbelowtheUVLOthresholdorrisesabovetheOVLOthreshold,theGATEpinispulledlowbythe2mApulldowncurrenttoswitchoffQ1.
CurrentLimitThecurrentlimitthresholdisreachedwhenthevoltageacrossthesenseresistorRS(VINtoSENSE)exceedstheinternalvoltagelimitof25mVor46mVdependingonwhethertheCLpinisconnectedtoGNDorVDD,respectively.
Inthecurrentlimitingcondition,theGATEvoltageiscontrolledtolimitthecurrentinMOSFETQ1.
Whilethecurrentlimitcircuitisactive,thefaulttimerisactiveasdescribedinFaultTimerandRestart.
IftheloadcurrentfallsbelowthecurrentlimitthresholdbeforetheendoftheFaultTimeoutPeriod,theLM25066I/Aresumesnormaloperation.
IfthecurrentlimitconditionpersistsforlongerthantheFaultTimeoutPeriodsetbythetimercapacitor,CT,theIINOCFAULTbitintheSTATUS_INPUT(7Ch)register,theINPUTbitintheSTATUS_WORD(79h)register,andtheIIN_OC/PFET_OP_FAULTbitintheDIAGNOSTIC_WORD(E1h)registerwillbetoggledhighandSMBApinwillbepulledlowunlessthisfeatureisdisabledusingtheALERT_MASK(D8h)register.
Forproperoperation,theRSresistorvalueshouldbelessthan200m.
Highervaluesmaycreateinstabilityinthecurrentlimitcontrolloop.
ThecurrentlimitthresholdpinvaluemaybeoverriddenbysettingappropriatebitsintheDEVICE_SETUPregister(D9h).
CircuitBreakerIftheloadcurrentincreasesrapidly(e.
g.
theloadisshortcircuited),thecurrentinthesenseresistor(RS)mayexceedthecurrentlimitthresholdbeforethecurrentlimitcontrolloopisabletorespond.
Ifthecurrentexceeds1.
8or3.
6times(usersettable)thecurrentlimitthreshold,Q1isquicklyswitchedoffbythe190mApulldowncurrentattheGATEpin,andaFaultTimeoutPeriodbegins.
WhenthevoltageacrossRSfallsbelowthethresholdthe190mApulldowncurrentattheGATEpinisswitchedoffandthegatevoltageofQ1isthendeterminedbythecurrentlimitorpowerlimitfunctions.
IftheTIMERpinreaches1.
7Vbeforethecurrentlimitingorpowerlimitingconditionceases,Q1isswitchedoffbythe2mApulldowncurrentattheGATEpinasdescribedinFaultTimerandRestart.
AcircuitbreakereventwillcausetheCIRCUITBREAKERFAULTbitintheSTATUS_MFR_SPECIFIC(80h)andDIAGNOSTIC_WORD(E1h)registerstobetoggledhighandSMBApinwillbepulledlowunlessthisfeatureisdisabledusingtheALERT_MASK(D8h)register.
ThecircuitbreakerpinconfigurationmaybeoverriddenbysettingappropriatebitsintheDEVICE_SETUP(D9h)register.
PowerLimitAnimportantfeatureoftheLM25066I/AistheMOSFETpowerlimiting.
ThePowerLimitfunctioncanbeusedtomaintainthemaximumpowerdissipationofMOSFETQ1withinthedeviceSOArating.
TheLM25066I/AdeterminesthepowerdissipationinQ1bymonitoringitsdrain-sourcevoltage(SENSEtoOUT),andthedraincurrentthroughRS(VINtoSENSE).
TheproductofthecurrentandvoltageiscomparedtothepowerlimitthresholdprogrammedbytheresistoratthePWRpin.
Ifthepowerdissipationreachesthelimitingthreshold,theGATEvoltageiscontrolledtoregulatethecurrentinQ1.
Whilethepowerlimitingcircuitisactive,thefaulttimeris16SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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IfthepowerlimitconditionpersistsforlongerthantheFaultTimeoutPeriodsetbythetimercapacitor,CT,theIIN_OC_FAULTbitintheSTATUS_INPUT(7Ch)register,theINPUTbitintheSTATUS_WORD(79h)register,andtheIIN_OC/PFET_OP_FAULTbitintheDIAGNOSTIC_WORD(E1h)registerwillbetoggledhighandSMBApinwillbepulledlowunlessthisfeatureisdisabledusingtheALERT_MASK(D8h)register.
FaultTimerandRestartWhenthecurrentlimitorpowerlimitthresholdisreachedduringturn-on,orasaresultofafaultcondition,thegate-to-sourcevoltageofQ1iscontrolledtoregulatetheloadcurrentandpowerdissipationinQ1.
Wheneitherlimitingfunctionisactive,a90Afaulttimercurrentsourcechargestheexternalcapacitor(CT)attheTIMERpinasshowninFigure32(FaultTimeoutPeriod).
IfthefaultconditionsubsidesduringtheFaultTimeoutPeriodbeforetheTIMERpinreaches1.
7V,theLM25066I/AreturnstothenormaloperatingmodeandCTisdischargedbythe1.
9mAcurrentsink.
IftheTIMERpinreaches1.
7VduringtheFaultTimeoutPeriod,Q1isswitchedoffbya2mApulldowncurrentattheGATEpin.
Thesubsequentrestartprocedurethendependsontheselectedretryconfiguration.
IftheRETRYpinishigh,theLM25066I/AlatchestheGATEpinlowattheendoftheFaultTimeoutPeriod.
CTisthendischargedtogroundbythe2.
8Afaultcurrentsink.
TheGATEpinisheldlowbythe2mApulldowncurrentuntilapowerupsequenceisexternallyinitiatedbycyclingtheinputvoltage(VSYS),ormomentarilypullingtheUVLO/ENpinbelowitsthresholdwithanopen-collectororopen-draindeviceasshowninFigure33.
ThevoltageattheTIMERpinmustbe<0.
3Vfortherestartproceduretobeeffective.
TheTIMER_LATCHED_OFFbitintheDIAGNOSTIC_WORD(E1h)registerwillremainhighwhilethelatchedoffconditionpersists.
Figure33.
LatchedFaultRestartControlTheLM25066I/AprovidesanautomaticrestartsequencewhichconsistsoftheTIMERpincyclingbetween1.
7Vand1VseventimesaftertheFaultTimeoutPeriod,asshowninFigure34.
Theperiodofeachcycleisdeterminedbythe90Achargingcurrent,andthe2.
8Adischargecurrent,andthevalueofthecapacitorCT.
WhentheTIMERpinreaches0.
3Vduringtheeighthhigh-to-lowramp,the22AcurrentsourceattheGATEpinturnsonQ1.
Ifthefaultconditionisstillpresent,theFaultTimeoutPeriodandtherestartsequencerepeat.
TheRETRYpinallowsselectingnoretriesorinfiniteretries.
FinercontroloftheretrybehaviorcanbeachievedthroughtheDEVICE_SETUP(D9h)register.
Retrycountsof0,1,2,4,8,16orinfinitemaybeselectedbysettingtheappropriatebitsintheDEVICE_SETUP(D9h)register.
Figure34.
RestartSequenceCopyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback17ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
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comUnder-VoltageLockout(UVLO)TheseriespassMOSFET(Q1)isenabledwhentheinputsupplyvoltage(VSYS)iswithintheoperatingrangedefinedbytheprogrammableunder-voltagelockout(UVLO)andover-voltagelockout(OVLO)levels.
TypicallytheUVLOlevelatVSYSissetwitharesistordivider(R1-R3)asshowninFigure35.
ReferingtotheBlockDiagramwhenVSYSisbelowtheUVLOlevel,theinternal23AcurrentsourceatUVLOisenabled,thecurrentsourceatOVLOisoff,andQ1isheldoffbythe2mApulldowncurrentattheGATEpin.
AsVSYSisincreased,raisingthevoltageatUVLOaboveitsthresholdthe23AcurrentsourceatUVLOisswitchedoff,increasingthevoltageatUVLO,providinghysteresisforthisthreshold.
WiththeUVLO/ENpinaboveitsthreshold,Q1isswitchedonbythe22AcurrentsourceattheGATEpiniftheinsertiontimedelayhasexpired.
SeeApplicationsSectionforaproceduretocalculatethevaluesofthethresholdsettingresistors(R1-R3).
TheminimumpossibleUVLOlevelatVSYScanbesetbyconnectingtheUVLO/ENpintoVIN.
Inthiscase,Q1isenabledaftertheinsertiontimewhenthevoltageatVINreachesthePORthreshold.
Afterpowerup,anUVLOconditionwilltogglehightheVINUVFAULTbitintheSTATUS_INPUT(7Ch),theINPUTbitintheSTATUS_WORDregister,andtheVIN_UNDERVOLTAGE_FAULTbitintheDIAGNOSTIC_WORD(E1h)register,andSMBApinwillbepulledlowunlessthisfeatureisdisabledusingtheALERT_MASK(D8h)register.
Over-VoltageLockout(OVLO)TheseriespassMOSFET(Q1)isenabledwhentheinputsupplyvoltage(VSYS)iswithintheoperatingrangedefinedbytheprogrammableunder-voltagelockout(UVLO)andover-voltagelockout(OVLO)levels.
IfVSYSraisestheOVLOpinvoltageaboveitsthreshold,Q1isswitchedoffbythe2mApulldowncurrentattheGATEpin,denyingpowertotheload.
WhentheOVLOpinisaboveitsthreshold,theinternal23AcurrentsourceatOVLOisswitchedon,raisingthevoltageatOVLOtoprovidethresholdhysteresis.
WhenVSYSisreducedbelowtheOVLOlevel,Q1isre-enabled.
AnOVLOconditionwilltogglehightheVINOVFAULTbitintheSTATUS_INPUT(7Ch),theINPUTbitintheSTATUS_WORDregister,andtheVIN_OVERVOLTAGE_FAULTbitintheDIAGNOSTIC_WORD(E1h)register,andtheSMBApinwillbepulledlowunlessthisfeatureisdisabledusingtheALERT_MASK(D8h)register.
SeeApplicationsSectionforaproceduretocalculatethethresholdsettingresistorvalues.
ShutdownControlTheloadcurrentcanberemotelyswitchedoffbytakingtheUVLO/ENpinbelowitsthresholdwithanopencollectororopendraindevice,asshowninFigure35.
UponreleasingtheUVLO/ENpin,theLM25066I/Aswitchesontheloadcurrentwithinrushcurrentandpowerlimiting.
Figure35.
ShutdownControlPowerGoodThePowerGoodindicator(PGD)isconnectedtothedrainofaninternalN-channelMOSFETcapableofsustaining17Vintheoff-state,andtransientsupto20V.
AnexternalpullupresistorisrequiredatPGDtoanappropriatevoltagetoindicatethestatustodownstreamcircuitry.
Theoff-statevoltageatthePGDpincanbehigherorlowerthanthevoltagesatVINandOUT.
PGDisswitchedhighwhenthevoltageattheFBpinexceedsthePGDthresholdvoltage.
Typically,theoutputvoltagethresholdissetwitharesistordividerfromoutputtofeedback,althoughthemonitoredvoltageneednotbetheoutputvoltage.
AnyothervoltagecanbemonitoredaslongasthevoltageattheFBpindoesnotexceeditsmaximumrating.
ReferringtotheBlockDiagram,whenthe18SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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Astheoutputvoltageincreases,takingFBaboveitsthreshold,thecurrentsourceisenabled,sourcingcurrentoutofthepin,raisingthevoltageatFBtoprovidethresholdhysteresis.
ThePGDoutputisforcedlowwheneithertheUVLO/ENpinisbelowitsthresholdortheOVLOpinisaboveitsthreshold.
ThestatusofthePGDpincanbereadviathePMBusinterfaceineithertheSTATUS_WORD(79h)orDIAGNOSTIC_WORD(E1h)registers.
VDDSub-RegulatorTheLM25066I/Acontainsaninternallinearsub-regulatorwhichstepsdowntheinputvoltagetogeneratea4.
5Vrailusedforpoweringlowvoltagecircuitry.
Whentheinputvoltageisbelow4.
5V,VDDwilltrackVIN.
Forinputvoltages3.
3Vandbelow,VDDshouldbetieddirectlytoVINtoavoidthedropoutofthesub-regulator.
TheVDDsub-regulatorshouldbeusedasthepullupsupplyfortheCL,CB,RETRY,ADR2,ADR1,ADR0pinsiftheyaretobetiedhigh.
ItmayalsobeusedasthepullupsupplyforthePGDandtheSMBussignals(SDA,SCL,SMBA).
TheVDDsub-regulatorisnotdesignedtodrivehighcurrentsandshouldnotbeloadedwithotherintegratedcircuits.
TheVDDpiniscurrentlimitedto45mAinordertoprotecttheLM25066I/Aintheeventofashort.
Thesub-regulatorrequiresabypasscapacitancehavingavaluebetween1Fand4.
7FtobeplacedasclosetotheVDDpinasthePCBlayoutallows.
RemoteTemperatureSensingTheLM25066I/AisdesignedtomeasuretemperatureremotelyusinganMMBT3904NPNtransistor.
ThebaseandcollectoroftheMMBT3904isconnectedtotheDIODEpinandtheemitterisgrounded.
PlacetheMMBT3904nearthedevicewhosetemperatureistobemonitored.
Ifthetemperatureofthehot-swappassMOSFET,Q1,istobemeasured,theMMBT3904shouldbeplacedasclosetoQ1asthelayoutallows.
ThetemperatureismeasuredbymeansofachangeinthediodevoltageinresponsetoastepincurrentsuppliedbytheDIODEpin.
TheDIODEpinsourcesaconstant9.
4Abutpulses250Aonceeverymillisecondinordertomeasurethediodetemperature.
CaremustbetakeninthePCBlayouttokeeptheparasiticresistancebetweentheDIODEpinandtheMMBT3904lowsoasnottodegradethemeasurement.
Additionally,asmall1000pFbypasscapacitorshouldbeplacedinparallelwiththeMMBT3904toreducetheeffectsofnoise.
ThetemperaturecanbereadusingtheREAD_TEMPERATURE_1PMBuscommand(8Dh).
ThedefaultlimitsoftheLM25066I/AwillcauseSMBApintobepulledlowifthemeasuredtemperatureexceeds125°Candwilldisablethehot-swappassMOSFETifthetemperatureexceeds150°C.
ThesethresholdscanbereprogrammedviathePMBusinterfaceusingtheOT_WARN_LIMIT(51h)andOT_FAULT_LIMIT(4Fh)commands.
IfthetemperaturemeasurementandprotectioncapabilityoftheLM25066I/Aisnotused,theDIODEpinshouldbegrounded.
DamagedMOSFETDetectionTheLM25066I/AisabletodetectwhethertheexternalMOSFET,Q1,isdamagedundercertainconditions.
Ifthevoltageacrossthesenseresistorexceeds4mVwhiletheGATEvoltageislowortheinternallogicindicatesthattheGATEshouldbelow,theEXT_MOSFET_SHORTEDbitintheSTATUS_MFR_SPECIFIC(80h)andDIAGNOSTIC_WORD(E1h)registerswillbetoggledhighandtheSMBApinwillbepulledlowunlessthisfeatureisdisabledusingtheALERT_MASKregister(D8h).
ThismethodeffectivelydetermineswhetherQ1isshortedbecauseofdamagepresentbetweenthedrainandgateand/ordrainandsourceoftheexternalMOSFET.
Enabling,Disabling,andResettingTheoutputcanbedisabledatanytimeduringnormaloperationbyeitherpullingtheUVLO/ENpintobelowitsthresholdortheOVLOpinaboveitsthreshold,causingtheGATEvoltagetobeforcedlowwithapulldownstrengthof2mA.
TogglingtheUVLO/ENpinwillalsoresettheLM25066I/Afromalatched-offstateduetoanover-currentorover-powerlimitconditionwhichhascausedthemaximumallowednumberofretriestobeexceeded.
WhiletheUVLO/ENorOVLOpinscanbeusedtodisabletheoutput,theyhavenoeffectonthevolatilememoryoraddresslocationoftheLM25066I/A.
Userstoredvaluesforaddress,deviceoperation,andwarningandfaultlevelsprogrammedviatheSMBusarepreservedwhiletheLM25066I/AispoweredregardlessofthestateoftheUVLO/ENandOVLOpins.
Theoutputmayalsobeenabledordisabledbywriting80hor0htotheOPERATION(03h)register.
Tore-enableafterafault,thefaultconditionshouldbeclearedandtheOPERATION(03h)registershouldbewrittento0handthen80h.
Copyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback19ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
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comTheSMBusaddressoftheLM25066I/AiscapturedbasedonthestatesoftheADR0,ADR1,andADR2pins(GND,NC,VDD)duringturn-onandislatchedintoavolatileregisteronceVDDhasexceededitsPORthresholdof2.
6V.
ReassigningorpostponingtheaddresscaptureisaccomplishedbyholdingtheVREFpintoground.
PullingtheVREFpinlowwillalsoresetthelogicanderasethevolatilememoryoftheLM25066I/A.
Oncereleased,theVREFpinwillchargeuptoitsfinalvalueandtheaddresswillbelatchedintoavolatileregisteroncethevoltageattheVREFexceeds2.
4V.
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comSNVS824C–JUNE2012–REVISEDMARCH2013APPLICATIONSSECTIONFigure36.
TypicalApplicationCircuitDESIGN-INPROCEDURE(RefertoFigure36forTypicalApplicationCircuit)Shownhereisthestep-by-stepprocedureforhardwaredesignoftheLM25066I/A.
Thisprocedurereferstosectionsthatprovidedetailedinformationonthefollowingdesignsteps.
Therecommendeddesign-inprocedureisasfollows:MOSFETSelection:DetermineMOSFETvaluebasedonbreakdownvoltage,currentandpowerratings.
CurrentLimit,RS:Determinethecurrentlimitthreshold(ILIM).
Thisthresholdmustbehigherthanthenormalmaximumloadcurrent,allowingfortolerancesinthecurrentsenseresistorvalueandtheLM25066I/ACurrentLimitthresholdvoltage.
UseEquation1todeterminethevalueforRS.
PowerLimitThreshold:DeterminethemaximumallowablepowerdissipationfortheseriespassMOSFET(Q1)usingthedevice'sSOAinformation.
UseEquation2todeterminethevalueforRPWR.
Turn-OnTimeandTIMERCapacitor,CT:DeterminethevalueforthetimingcapacitorattheTIMERpin(CT)usingEquation8.
Thefaulttimeoutperiod(tFAULT)MUSTbelongerthanthecircuit'sturn-on-time.
Theturn-ontimecanbeestimatedusingtheequationsinTURN-ONTIME,butshouldbeverifiedexperimentally.
Reviewtheresultinginsertiontime,andtherestarttimingifretryisenabled.
UVLO,OVLO:ChooseoptionA,B,C,orDfromUVLO,OVLOtosettheUVLOandOVLOthresholdsandhysteresis.
UsetheprocedurefortheappropriateoptiontodeterminetheresistorvaluesattheUVLO/ENandOVLOpins.
PowerGood:ChoosetheappropriateoutputvoltageandcalculatetherequiredresistordividerfromtheoutputvoltagetotheFBpin.
ChooseeitherVDDorOUTtoconnectproperlysizedpullupresistorforthePowerGoodoutput(PGD).
RefertoProgrammingGuidesection:Afterallhardwaredesigniscomplete,refertotheprogrammingguideforastepbystepprocedureregardingsoftware.
MOSFETSELECTIONItisrecommendedthattheexternalMOSFET(Q1)selectionbebasedonthefollowingcriteria:Copyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback21ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
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comTheBVDSSratingshouldbegreaterthanthemaximumsystemvoltage(VSYS),plusringingandtransientswhichcanoccuratVSYSwhenthecircuitcard,oradjacentcards,areinsertedorremoved.
Themaximumcontinuouscurrentratingshouldbebasedonthecurrentlimitthreshold(e.
g.
25mV/RS),notthemaximumloadcurrent,sincethecircuitcanoperatenearthecurrentlimitthresholdcontinuously.
ThePulsedDrainCurrentspec(IDM)mustbegreaterthanthecurrentthresholdforthecircuitbreakerfunction(45mV/RSwhenCL=CB=GND).
TheSOA(SafeOperatingArea)chartofthedeviceanditsthermalpropertiesshouldbeusedtodeterminethemaximumpowerdissipationthresholdsetbytheRPWRresistor.
TheprogrammedmaximumpowerdissipationshouldhaveareasonablemarginfromthemaximumpowerdefinedbytheMOSFET'sSOAcurve(ifthedeviceissettoinfinitelyretry,theMOSFETwillberepeatedlystressedduringfaultrestartcycles).
TheMOSFETmanufacturershouldbeconsultedforguidelines.
RDS(on)shouldbesufficientlylowsuchthatthepowerdissipationatmaximumloadcurrent(ILIM2xRDS(on))doesnotraiseitsjunctiontemperatureabovethemanufacturer'srecommendation.
Thegate-to-sourcevoltageprovidedbytheLM25066I/Acanbeashighas18.
8Vatturn-onwhentheoutputvoltageiszero.
Atturn-off,thereversegate-to-sourcevoltagewillbeequaltotheoutputvoltageattheinstanttheGATEpinispulledlow.
IfthedevicechosenforQ1isnotratedforthesevoltages,anexternalzenerdiodemustbeaddedfromitsgatetosource,withthezenervoltagelessthanthedevicemaximumVGSrating.
Thezenerdiode'sworkingvoltageprotectstheMOSFETduringturn-on,anditsforwardvoltageprotectstheMOSFETduringshutoff.
Thezenerdiode'sforwardcurrentratingmustbeatleast190mAtoconducttheGATEpulldowncurrentwhenacircuitbreakerconditionisdetected.
CURRENTLIMIT(RS)TheLM25066I/AmonitorsthecurrentintheexternalMOSFETQ1bymeasuringthevoltageacrossthesenseresistor(RS),connectedfromVINtoSENSE.
Therequiredresistorvalueiscalculatedfrom:(1)whereILIMisthedesiredcurrentlimitthreshold.
IfthevoltageacrossRSreachesVCL,thecurrentlimitcircuitmodulatesthegateofQ1toregulatethecurrentatILIM.
Whilethecurrentlimitingcircuitisactive,thefaulttimerisactiveasdescribedinFaultTimerandRestart.
Forproperoperation,RSmustbelessthan200m.
VCLcanbesettoeither25mVor46mVviahardwareand/orsoftware.
ThissettingdefaultstouseofCLpinwhichwhengroundedis25mVorhighis46mV.
ThevaluewhenpoweredcanbesetviaPMBuswiththeMFR_SPECIFIC_DEVICE_SETUPcommand,whichdefaultstothe25mVsetting.
Oncethedesiredsettingisknown,calculatetheshuntbasedonthatinputvoltageandmaximumcurrent.
WhilethemaximumloadcurrentinnormaloperationcanbeusedtodeterminetherequiredpowerratingforresistorRS,basingitonthecurrentlimitvalueprovidesamorereliabledesignsincethecircuitcanoperatenearthecurrentlimitthresholdcontinuously.
Theresistor'ssurgecapabilitymustalsobeconsideredsincethecircuitbreakerthresholdis1.
8or3.
6timesthecurrentlimitthreshold.
ConnectionsfromRStotheLM25066I/AshouldbemadeusingKelvintechniques.
InthesuggestedlayoutofFigure37,thesmallpadsatthelowercornersofthesenseresistorconnectonlytothesenseresistorterminalsandnottothetracescarryingthehighcurrent.
Withthistechnique,onlythevoltageacrossthesenseresistorisappliedtoVINandSENSE,eliminatingthevoltagedropacrossthehighcurrentsolderconnections.
Figure37.
SenseResistorConnections22SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013POWERLIMITTHRESHOLDTheLM25066I/AdeterminesthepowerdissipationintheexternalMOSFET(Q1)bymonitoringthedraincurrent(thecurrentinRS),andtheVDSofQ1(SENSEtoOUTpins).
TheresistoratthePWRpin(RPWR)setsthemaximumpowerdissipationforQ1andiscalculatedfromEquation2:RPWR=1.
71x105xRSxPMOSFET(LIM)(2)wherePMOSFET(LIM)isthedesiredpowerlimitthresholdforQ1andRSisthecurrentsenseresistordescribedinCurrentLimit.
Forexample,ifRSis10mandthedesiredpowerlimitthresholdis20W,RPWRcalculatesto34.
2k.
IfQ1'spowerdissipationreachesthethreshold,Q1'sgateiscontrolledtoregulatetheloadcurrent,keepingQ1'spowerfromexceedingthethreshold.
Forproperoperationofthepowerlimitingfeature,RPWRmustbe≤150k.
Whilethepowerlimitingcircuitisactive,thefaulttimerisactiveasdescribedinFaultTimerandRestart.
Typically,powerlimitisreachedduringstartup,oriftheoutputvoltagefallsbecauseofasevereoverloadorshortcircuit.
TheprogrammedmaximumpowerdissipationshouldhaveareasonablemarginfromthemaximumpowerdefinedbytheSOAchart,especiallyifretryisenabledsincetheMOSFETwillberepeatedlystressedduringfaultrestartcycles.
TheMOSFETmanufacturershouldbeconsultedforguidelines.
Iftheapplicationdoesnotrequireuseofthepowerlimitfunction,thePWRpincanbeleftopen.
Theaccuracyofthepowerlimitfunctionatturn-onmaydegradeifaverylowvaluepowerdissipationlimitisset.
Thereasonforthiscautionisthatthevoltageacrossthesenseresistor,whichismonitoredandregulatedbythepowerlimitcircuit,islowestatturn-onwhentheregulatedcurrentisataminimum.
Thevoltageacrossthesenseresistorduringpowerlimitcanbeexpressedasfollows:(3)whereIListhecurrentinRSandVDSisthevoltageacrossQ1.
Forexample,ifthepowerlimitissetat20WwithRS=10mandVDS=15V,thesenseresistorvoltagecalculatesto13.
3mV,whichiscomfortablyregulatedbytheLM25066I/A.
However,ifthepowerlimitissetlower(e.
g.
2W),thesenseresistorvoltagecalculatesto1.
33mV.
Atthislowlevel,noiseandoffsetswithintheLM25066I/Amaydegradethepowerlimitaccuracy.
Tomaintainaccuracy,thesenseresistorvoltageshouldnotbelessthan5mV.
TURN-ONTIMETheoutputturn-ontimedependsonwhethertheLM25066I/Aoperatesincurrentlimit,orinbothpowerlimitandcurrentlimit,duringturn-on.
A)Turn-onwithcurrentlimitonly:Thecurrentlimitthreshold(ILIM)isdeterminedbythecurrentsenseresistor(RS).
IfthecurrentlimitthresholdislessthanthecurrentdefinedbythepowerlimitthresholdatmaximumVDS,thecircuitoperatesatthecurrentlimitthresholdonlyduringturn-on.
ReferringtoFigure39A,astheloadcurrentreachesILIM,thegate-to-sourcevoltageiscontrolledatVGSLtomaintainthecurrentatILIM.
Astheoutputvoltagereachesitsfinalvalue(VDS0V)thedraincurrentreducestoitsnormaloperatingvalue.
ThetimefortheOUTpinvoltagetotransitionfromzerovoltstoVSYSisequalto:(4)whereCListheloadcapacitance.
Forexample,ifVSYS=12V,CL=1000F,andILIM=1A,tONcalculatesto12ms.
ThemaximuminstantaneouspowerdissipatedintheMOSFETis12W.
Thiscalculationassumesthetimefromt1tot2inFigure40(a)issmallcomparedtotONandtheloaddoesnotdrawanycurrentuntilaftertheoutputvoltagehasreacheditsfinalvalue,andPGDswitcheshigh(Figure39A).
TheFaultTimeoutPeriodmustbesetlongerthantONtopreventafaultshutdownbeforetheturn-onsequenceiscomplete.
Iftheloaddrawscurrentduringtheturn-onsequence(Figure39B),theturn-ontimeislongerthantheabovecalculationandisapproximatelyequalto:(5)whereRListheloadresistance.
TheFaultTimeoutPeriodmustbesetlongerthantONtopreventafaultshutdownbeforetheturn-onsequenceiscomplete.
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comFigure38.
A.
NoLoadCurrentDuringTurn-OnLoadDrawsCurrentDuringTurn-OnFigure39.
CurrentDuringTurn-OnB)Turn-OnwithPowerLimitandCurrentLimit:ThemaximumallowedpowerdissipationinQ1(PMOSFET(LIM))isdefinedbytheresistoratthePWRpin,andthecurrentsenseresistorRS.
SeePOWERLIMITTHRESHOLD.
Ifthecurrentlimitthreshold(ILIM)ishigherthanthecurrentdefinedbythepowerlimitthresholdatmaximumVDS(PMOSFET(LIM)/VSYS),thecircuitoperatesinitiallyinthepowerlimitmodewhentheVDSofQ1ishighandthentransitionstocurrentlimitmodeasthecurrentincreasestoILIMandVDSdecreases.
Assumingtheload(RL)isnotconnectedduringturn-on,thetimefortheoutputvoltagetoreachitsfinalvalueisapproximatelyequalto:(6)Forexample,ifVSYS=12V,CL=1000F,ILIM=1A,andPMOSFET(LIM)=10W,tONcalculatesto12.
2ms,andtheinitialcurrentlevel(IP)isapproximately0.
83A.
TheFaultTimeoutPeriodmustbesetlongerthantON.
Figure40.
MOSFETPowerUpWaveformsTIMERCAPACITOR,CTTheTIMERpincapacitor(CT)setsthetimingfortheinsertiontimedelay,faulttimeoutperiod,andtherestarttimingoftheLM25066I/A.
24SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013A)InsertionDelay-Uponapplyingthesystemvoltage(VSYS)tothecircuit,theexternalMOSFET(Q1)isheldoffduringtheinsertiontime(t1inFigure32)toallowringingandtransientsatVSYStosettle.
Sinceeachbackplane'sresponsetoacircuitcardplug-inisunique,theworstcasesettlingtimemustbedeterminedforeachapplication.
TheinsertiontimestartswhenVINreachesthePORthreshold,atwhichtimetheinternal5.
5AcurrentsourcechargesCTfrom0Vto1.
7V.
Therequiredcapacitorvalueiscalculatedfrom:(7)Forexample,ifthedesiredinsertiondelayis250ms,CTcalculatesto0.
8F.
Attheendoftheinsertiondelay,CTisquicklydischargedbya1.
9mAcurrentsink.
B)FaultTimeoutPeriod-Duringinrushcurrentlimitingorupondetectionofafaultconditionwherethecurrentlimitand/orpowerlimitcircuitsregulatethecurrentthroughQ1,thefaulttimercurrentsource(90A)isswitchedontochargeCT.
TheFaultTimeoutPeriodisthetimerequiredfortheTIMERpinvoltagetoreach1.
7V,atwhichtimeQ1isswitchedoff.
TherequiredcapacitorvalueforthedesiredFaultTimeoutPeriodtFAULTiscalculatedfrom:(8)Forexample,ifthedesiredFaultTimeoutPeriodis15ms,CTcalculatesto0.
8F.
CTisdischargedbythe2.
8AcurrentsinkattheendoftheFaultTimeoutPeriod.
AftertheFaultTimeoutPeriod,ifretryisdisabled,theLM25066I/AlatchestheGATEpinlowuntilapowerupsequenceisinitiatedbyexternalcircuitry.
WhentheFaultTimeoutPeriodoftheLM25066I/Aexpires,arestartsequencestartsasdescribedbelow(RestartTiming).
Duringconsecutivecyclesoftherestartsequence,thefaulttimeoutperiodisshorterthantheinitialfaulttimeoutperioddescribedabovebyapproximately20%sincethevoltageattheTIMERpinstartsrampingupfrom0.
3Vratherthanground.
SincetheLM25066I/Anormallyoperatesinpowerlimitand/orcurrentlimitduringapowerupsequence,theFaultTimeoutPeriodMUSTbelongerthanthetimerequiredfortheoutputvoltagetoreachitsfinalvalue.
SeeTURN-ONTIME.
C)RestartTiming-FortheLM25066I/A,aftertheFaultTimeoutPerioddescribedabove,CTisdischargedbythe2.
8Acurrentsinkto1V.
TheTIMERpinthencyclesthroughsevenadditionalcharge/dischargecyclesbetween1Vand1.
7VasshowninFigure34.
TherestarttimeendswhentheTIMERpinvoltagereaches0.
3Vduringthefinalhigh-to-lowramp.
Therestarttime,aftertheFaultTimeoutPeriod,isequalto:(9)=CTx2.
3x106(10)Forexample,ifCT=0.
8F,tRESTART=2seconds.
Attheendoftherestarttime,Q1isswitchedon.
Ifthefaultisstillpresent,thefaulttimeoutandrestartsequencerepeats.
Theon-timedutycycleofQ1isapproximately0.
67%inthismode.
UVLO,OVLOByprogrammingtheUVLOandOVLOthresholdstheLM25066I/Aenablestheseriespassdevice(Q1)whentheinputsupplyvoltage(VSYS)iswithinthedesiredoperationalrange.
IfVSYSisbelowtheUVLOthreshold,orabovetheOVLOthreshold,Q1isswitchedoff,denyingpowertotheload.
Hysteresisisprovidedforeachthreshold.
OptionA:TheconfigurationshowninFigure41requiresthreeresistors(R1-R3)tosetthethresholds.
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comFigure41.
UVLOandOVLOThresholdsSetByR1-R3Theproceduretocalculatetheresistorvaluesisasfollows:ChoosetheupperUVLOthreshold(VUVH),andthelowerUVLOthreshold(VUVL).
ChoosetheupperOVLOthreshold(VOVH).
ThelowerOVLOthreshold(VOVL)cannotbechoseninadvanceinthiscase,butisdeterminedafterthevaluesforR1-R3aredetermined.
IfVOVLmustbeaccuratelydefinedinadditiontotheotherthreethresholds,seeOptionBbelow.
Theresistorsarecalculatedasfollows:(11)(12)(13)ThelowerOVLOthresholdiscalculatedfrom:(14)Asanexample,assumetheapplicationrequiresthefollowingthresholds:VUVH=8V,VUVL=7V,VOVH=15V.
(15)(16)(17)ThelowerOVLOthresholdcalculatesto12.
03VandtheOVLOhysteresisis2.
97V.
NotethattheOVLOhysteresisisalwaysslightlygreaterthantheUVLOhysteresisinthisconfiguration.
WhentheR1-R3resistorvaluesareknown,thethresholdvoltagesandhysteresisarecalculatedfromthefollowing:(18)(19)VUV(HYS)=R1x23A(20)(21)(22)VOV(HYS)=(R1+R2)x23A(23)26SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013OptionB:Ifallfourthresholdsmustbeaccuratelydefined,theconfigurationinFigure42canbeused.
Figure42.
ProgrammingtheFourThresholdsThefourresistorvaluesarecalculatedasfollows:-ChoosetheupperandlowerUVLOthresholds(VUVH)and(VUVL).
(24)(25)-ChoosetheupperandlowerOVLOthreshold(VOVH)and(VOVL).
(26)(27)Asanexample,assumetheapplicationrequiresthefollowingthresholds:VUVH=8V,VUVL=7V,VOVH=15.
5V,andVOVL=14V.
ThereforeVUV(HYS)=1VandVOV(HYS)=1.
5V.
Theresistorvaluesare:R1=43.
5k,R2=8.
64kR3=65.
2k,R4=5.
27kWhentheR1-R4resistorvaluesareknown,thethresholdvoltagesandhysteresisarecalculatedfromthefollowing:(28)(29)VUV(HYS)=R1x23A(30)(31)(32)VOV(HYS)=R3x23A(33)OptionC:TheminimumUVLOlevelisobtainedbyconnectingtheUVLO/ENpintoVINasshowninFigure43.
Q1isswitchedonwhentheVINvoltagereachesthePORthreshold(2.
6V).
TheOVLOthresholdsaresetusingR3,R4.
TheirvaluesarecalculatedusingtheprocedureinOptionB.
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comFigure43.
UVLO=POROptionD:TheOVLOfunctioncanbedisabledbygroundingtheOVLOpin.
TheUVLOthresholdsaresetasdescribedinOptionBorOptionC.
POWERGOODWhenthevoltageattheFBpinincreasesaboveitsthreshold,theinternalpulldownactingonthePGDpinisdisabledallowingPGDtorisetoVPGDthroughthepullupresistor,RPG,asshowninFigure45.
Thepullupvoltage(VPGD)canbeashighas17V,andcanbehigherorlowerthanthevoltagesatVINandOUT.
VDDisaconvenientchoiceforVPGDasitallowsinterfacetolowvoltagelogicandavoidsglitchingonPGDduringpower-up.
IfadelayisrequiredatPGD,suggestedcircuitsareshowninFigure46InFigure46A,capacitorCPGaddsdelaytotherisingedge,butnottothefallingedge.
InFigure46B,therisingedgeisdelayedbyRPG1+RPG2andCPG,whilethefallingedgeisdelayedalesseramountbyRPG2andCPG.
AddingadiodeacrossRPG2(Figure46C)allowsforequaldelaysatthetwoedges,orashortdelayattherisingedgeandalongdelayatthefallingedge.
SettingtheoutputthresholdforthePGDpinrequirestworesistors(R4,R5)asshowninFigure44.
WhilemonitoringtheoutputvoltageisshowninFigure44.
R4canbeconnectedtoanyothervoltagewhichrequiresmonitoring.
Theresistorvaluesarecalculatedasfollows:Choosetheupperandlowerthreshold(VPGDH)and(VPGDL)atVOUT.
(34)Asanexample,assumetheapplicationrequiresthefollowingthresholds:VPGDH=10.
14V,andVPGDL=9.
9V.
ThereforeVPGD(HYS)=0.
24V.
Theresistorvaluesare:R4=10k,R5=1.
3kWheretheR4andR5resistorvaluesareknown,thethresholdvoltagesandhysteresisarecalculatedfromthefollowing:(35)28SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013Figure44.
ProgrammingthePGDThresholdFigure45.
PowerGoodOutputFigure46.
AddingDelaytothePowerGoodOutputPinSYSTEMCONSIDERATIONSA)ContinuedproperoperationoftheLM25066I/Ahot-swapcircuitnormallydictatesthatcapacitancebepresentonthesupplysideoftheconnectorintowhichthehot-swapcircuitispluggedin,asdepictedinFigure47.
Thecapacitorinthe"LIVEPOWERSOURCE"sectionisnecessarytoabsorbthetransientgeneratedwheneverthehot-swapcircuitshutsofftheloadcurrent.
Ifthecapacitanceisnotpresent,parasiticinductanceofthesupplylineswillgenerateavoltagetransientatshut-offwhichmayexceedtheabsolutemaximumratingoftheLM25066I/A,resultinginitsdestruction.
ATVSdevicewithappropriatevoltageandpowerratingscanalsobeconnectedfromVINtoGNDtoclampthevoltagespike(seeapplicationnoteAN-2100SNVA464).
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comB)IftheloadpoweredbytheLM25066I/Ahot-swapcircuithasinductivecharacteristics,aSchottkydiodeisrequiredacrosstheLM25066I/A'soutputalongwithsomeloadcapacitance.
ThecapacitanceanddiodearenecessarytolimitthenegativeexcursionattheOUTpinwhentheloadcurrentisshutoff.
IftheOUTpintransitionsmorethan0.
3Vnegative,theLM25066I/Awillinternallyreset,erasingthevolatilesettingforretriesandwarningthresholds.
SeeFigure47.
Toalleviatethis,asmallgateresistance(e.
g.
10)canbeused.
Thisresistorhastheaddedbenefitofdampinganyhighfrequencygatevoltageoscillations,particularlyinparalleledFETarrangements.
Figure47.
OutputDiodeRequiredforInductiveLoadsPCBOARDGUIDELINESThefollowingguidelinesshouldbefollowedwhendesigningthePCboardfortheLM25066I/A:PlacetheLM25066I/Aclosetotheboard'sinputconnectortominimizetraceinductancefromtheconnectortotheMOSFET.
Placeasmallcapacitor,CIN(1nF),directlyadjacenttotheVINandGNDpinsoftheLM25066I/Atohelpminimizetransientswhichmayoccurontheinputsupplyline.
Transientsofseveralvoltscaneasilyoccurwhentheloadcurrentisshutoff.
ASIDE:notethatifthecurrentdrawnbysuchcapacitorisdeemedunacceptable,inputvoltagespiketransientscanbeappropriatelyminiminzedbyproperplacementofaTVSdeviceandoperationwithoutthisCINcapacitorbecomesfeasible.
Placea1FcapacitorascloseaspossibletoVREFpin.
Placea1FcapacitorascloseaspossibletoVDDpin.
Thesenseresistor(RS)shouldbeplacedclosetotheLM25066I/A.
Inparticular,thetracetotheVINpinshouldbemadeaslowresistanceaspracticaltoensuremaximumcurrentandpowermeasurementaccuracy.
ConnectRSusingtheKelvintechniquesshowninFigure37.
Thehighcurrentpathfromtheboard'sinputtotheload(viaQ1)andthereturnpathshouldbeparallelandclosetoeachothertominimizeparasiticloopinductance.
ThegroundconnectionsforthevariouscomponentsaroundtheLM25066I/AshouldbeconnecteddirectlytoeachotherandtotheLM25066I/A'sGNDpinandthenconnectedtothesystemgroundatonepoint.
Donotconnectthevariouscomponentgroundstoeachotherthroughthehighcurrentgroundline.
Formoredetails,seeapplicationnoteAN-2100SNVA464.
Provideadequateheatsinkingfortheseriespassdevice(Q1)tohelpreducestressesduringturn-onandturn-off.
KeepthegatetracefromtheLM25066I/AtothepassMOSFETshortanddirect.
Theboard'sedgeconnectorcanbedesignedsuchthattheLM25066I/AdetectsviatheUVLO/ENpinthattheboardisbeingremovedandrespondsbyturningofftheloadbeforethesupplyvoltageisdisconnected.
Forexample,inFigure48,thevoltageattheUVLO/ENpingoestogroundbeforeVSYSisremovedfromtheLM25066I/Abecauseoftheshorteredgeconnectorpin.
Whentheboardisinsertedintotheedgeconnector,thesystemvoltageisappliedtotheLM25066I/A'sVINpinbeforetheUVLOvoltageistakenhigh,therebyallowingtheLM25066I/Atoturnontheoutputinacontrolledfashion.
30SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013Figure48.
RecommendedBoardConnectorDesignPMBusCommandSupportThedevicefeaturesanSMBusinterfacethatallowstheuseofPMBuscommandstosetwarnlevels,errormasks,andgettelemetryonVIN,VOUT,IIN,VAUX,andPIN.
ThesupportedPMBuscommandsareshowninTable1.
Table1.
SupportedPMBusCommandsNumberDefaultCodeNameFunctionR/WOfDataValueBytes01hOPERATIONRetrievesorstorestheoperationstatus.
R/W180h03hCLEAR_FAULTSClearsthestatusregistersandre-armstheblackboxregistersSend0forupdating.
Byte19hCAPABILITYRetrievesthedevicecapability.
R1B0h43hVOUT_UV_WARN_LIMITRetrievesorstoresoutputunder-voltagewarnlimitthreshold.
R/W20000h4FhOT_FAULT_LIMITRetrievesorstoresover-temperaturefaultlimitthreshold.
R/W20FFFh(256°C)51hOT_WARN_LIMITRetrievesorstoresover-temperaturewarnlimitthreshold.
R/W20FFFh(256°C)57hVIN_OV_WARN_LIMITRetrievesorstoresinputover-voltagewarnlimitthreshold.
R/W20FFFh58hVIN_UV_WARN_LIMITRetrievesorstoresinputunder-voltagewarnlimitthreshold.
R/W20000h5DhIIN_OC_WARN_LIMITRetrievesorstoresinputcurrentwarnlimitthreshold(mirroratR/W20FFFhD3h)78hSTATUS_BYTERetrievesinformationaboutthepartoperatingstatus.
R101h79hSTATUS_WORDRetrievesinformationaboutthepartoperatingstatus.
R20801h7AhSTATUS_VOUTRetrievesinformationaboutoutputvoltagestatus.
R100h7ChSTATUS_INPUTRetrievesinformationaboutinputstatus.
R110h7DhSTATUS_TEMPERATURERetrievesinformationabouttemperaturestatus.
R100h7EhSTATUS_CMLRetrievesinformationaboutcommunicationsstatus.
R100h7FhSTATUS_OTHERRetrievesotherstatusinformationR100h80hSTATUS_MFR_SPECIFICRetrievesinformationaboutcircuitbreakerandMOSFETR110hshortedstatus.
86hREAD_EINRetrievesenergymetermeasurement.
R600h00h00h00h00h00hCopyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback31ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
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comTable1.
SupportedPMBusCommands(continued)NumberDefaultCodeNameFunctionR/WOfDataValueBytes88hREAD_VINRetrievesinputvoltagemeasurement.
R20000h89hREAD_IINRetrievesinputcurrentmeasurement(MirroratD1h).
R20000h8BhREAD_VOUTRetrievesoutputvoltagemeasurement.
R20000h8DhREAD_TEMPERATURE_1Retrievestemperaturemeasurement.
R20000h97hREAD_PINRetrievesaveragedinputpowermeasurement(mirroratDFh).
R20000h98hPMBUS_RevisionRetrievesPMBusRevisionR122h99hMFR_IDRetrievesmanufacturerIDinASCIIcharacters(TI).
R254h49h9AhMFR_MODELRetrievesPartnumberinASCIIcharacters.
(LM25066I).
R84Ch4Dh32h35h30h36h36h49h9BhMFR_REVISIONRetrievespartrevisionletter/numberinASCII(e.
g.
AA).
R241hA41hAD0hMFR_SPECIFIC_00Retrievesauxiliaryvoltagemeasurement.
R20000hREAD_VAUXD1hMFR_SPECIFIC_01Retrievesinputcurrentmeasurement.
(Mirrorat89h)R20000hMFR_READ_IIND2hMFR_SPECIFIC_02Retrievesinputpowermeasurement.
R20000hMFR_READ_PIND3hMFR_SPECIFIC_03Retrievesorstoresinputcurrentlimitwarnthreshold.
(MirroratR/W20FFFhMFR_IIN_OC_WARN_LIMIT5Dh)D4hMFR_SPECIFIC_04Retrievesorstoresinputpowerlimitwarnthreshold.
R/W20FFFhMFR_PIN_OP_WARN_LIMITD5hMFR_SPECIFIC_05Retrievesmeasuredmaximuminputpowermeasurement.
R20000hREAD_PIN_PEAKD6hMFR_SPECIFIC_06Resetsthecontentsofthepeakinputpowerregistertozero.
Send0CLEAR_PIN_PEAKByteD7hMFR_SPECIFIC_07DisablesexternalMOSFETgatecontrolforFAULTs.
R/W10000hGATE_MASKD8hMFR_SPECIFIC_08Retrievesorstoresuseruserfaultmask.
R/W2FD04hALERT_MASKD9hMFR_SPECIFIC_09Retrievesorstoresinformationaboutnumberofretryattempts.
R/W10000hDEVICE_SETUPDAhMFR_SPECIFIC_10RetrievesmostrecentdiagnosticandtelemetryinformationinaR120460hBLOCK_READsingletransaction.
0000h0000h0000h0000h0000hDBhMFR_SPECIFIC_112^nnumberofsamplestobeaveraged,range=00hto0Ch.
R/W108hSAMPLES_FOR_AVGDChMFR_SPECIFIC_12Retrievesaveragedinputvoltagemeasurement.
R20000hREAD_AVG_VINDDhMFR_SPECIFIC_13Retrievesaveragedoutputvoltagemeasurement.
R20000hREAD_AVG_VOUTDEhMFR_SPECIFIC_14Retrievesaveragedinputcurrentmeasurement.
R20000hREAD_AVG_IINDFhMFR_SPECIFIC_15Retrievesaveragedinputpowermeasurement.
(Mirrorat97h)R20000hREAD_AVG_PIN32SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013Table1.
SupportedPMBusCommands(continued)NumberDefaultCodeNameFunctionR/WOfDataValueBytesE0hMFR_SPECIFIC_16CapturesdiagnosticandtelemetryinformationwhichareR120000hBLACK_BOX_READlatchedwhenthefirstSMBAalertoccursafterfaultshavebeen0000hcleared.
0000h0000h0000h0000hE1hMFR_SPECIFIC_17Manufacturer-specificparalleloftheSTATUS_WORDtoconveyR20880hREAD_DIAGNOSTIC_WORDallFAULT/WARNdatainasingletransaction.
E2hMFR_SPECIFIC_18RetrievesmostrecentaveragetelemetryanddiagnosticR120880hAVG_BLOCK_READinformationinasingletransaction.
0000h0000h0000h0000h0000hStandardPMBusCommandsOPERATION(01h)TheOPERATIONcommandisastandardPMBuscommandthatcontrolstheMOSFETswitch.
ThiscommandmaybeusedtoswitchtheMOSFETONandOFFunderhostcontrol.
Itisalsousedtore-enabletheMOSFETafterafaulttriggeredshutdown.
WritinganOFFcommandfollowedbyanONcommandwillclearallfaults.
WritingonlyanONcommandafterafaulttriggeredshutdownwillnotclearthefaultregisters.
TheOPERATIONcommandisissuedwiththewritebyteprotocol.
Table2.
RecognizedOPERATIONCommandValuesValueMeaningDefault80hSwitchON80h00hSwitchOFFn/aCLEAR_FAULTS(03h)TheCLEAR_FAULTScommandisastandardPMBuscommandthatresetsallstoredwarningandfaultflagsandtheSMBAsignal.
IfafaultorwarningconditionstillexistswhentheCLEAR_FAULTScommandisissued,theSMBAsignalmaynotclearorwillre-assertalmostimmediately.
IssuingaCLEAR_FAULTScommandwillnotcausetheMOSFETtoswitchbackonintheeventofafaultturn-off:thatmustbedonebyissuinganOPERATIONcommandafterthefaultconditioniscleared.
ThiscommandusesthePMBussendbyteprotocol.
CAPABILITY(19h)TheCAPABILITYcommandisastandardPMBuscommandthatreturnsinformationaboutthePMBusfunctionssupportedbytheLM25066I/A.
ThiscommandisreadwiththePMBusreadbyteprotocol.
Table3.
CAPABILITYRegisterValueMeaningDefaultB0hSupportsPacketErrorCheck,400Kbits/sec,SupportsSMBusAlertB0hVOUT_UV_WARN_LIMIT(43h)TheVOUT_UV_WARN_LIMITcommandisastandardPMBuscommandthatallowsconfiguringorreadingthethresholdfortheVOUTUnder-voltageWarningdetection.
ReadingandwritingtothisregistershouldusethecoefficientsshowninTable44.
AccessestothiscommandshouldusethePMBusreadorwritewordprotocol.
IfthemeasuredvalueofVOUTfallsbelowthevalueinthisregister,VOUTUVWarnLimitflagsaresetintherespectiveregisters,andtheSMBAsignalisasserted.
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comTable4.
VOUT_UV_WARN_LIMITRegisterValueMeaningDefault1h–0FFFhVOUTUnder-voltageWarningdetectionthreshold0000h(disabled)0000hVOUTUnder-voltageWarningdisabledn/aOT_FAULT_LIMIT(4Fh)TheOT_FAULT_LIMITisastandardPMBuscommandthatallowsconfiguringorreadingthethresholdfortheOvertemperatureFaultdetection.
ReadingandwritingtothisregistershouldusethecoefficientsshowninTable44.
AccessestothiscommandshouldusethePMBusreadorwritewordprotocol.
Ifthemeasuredtemperatureexceedsthisvalue,anovertemperaturefaultistriggered,theMOSFETisswitchedoff,OTFaultflagsaresetintherespectiveregisters,andtheSMBAsignalisasserted.
Afterthemeasuredtemperaturefallsbelowthevalueinthisregister,theMOSFETmaybeswitchedbackonwiththeOPERATIONcommand.
Asingletemperaturemeasurementisanaverageof16millisecondsofdata.
Therefore,thetemperaturefaultdetectiontimemaybeupto16ms.
Table5.
OT_FAULT_LIMITRegisterValueMeaningDefault0h–0FFFhOvertemperatureFaultThresholdValue0FFFh(256°C)0FFFhOvertemperatureFaultdetectiondisabledn/aOT_WARN_LIMIT(51h)TheOT_WARN_LIMITisastandardPMBuscommandthatallowsconfiguringorreadingthethresholdfortheOvertemperatureWarningdetection.
ReadingandwritingtothisregistershouldusethecoefficientsshowninTable44.
AccessestothiscommandshouldusethePMBusreadorwritewordprotocol.
Ifthemeasuredtemperatureexceedsthisvalue,anovertemperaturewarningistriggered,theOTWarnflagsaresetintherespectiveregisters,andtheSMBAsignalisasserted.
Asingletemperaturemeasurementisanaverageof16millisecondsofdata.
Therefore,thetemperaturewarndetectiontimemaybeupto16ms.
Table6.
OT_WARN_LIMITRegisterValueMeaningDefault0h–0FFFhOvertemperatureWarnThresholdValue0FFFh(256°C)0FFFhOvertemperatureWarndetectiondisabledn/aVIN_OV_WARN_LIMIT(57h)TheVIN_OV_WARN_LIMITisastandardPMBuscommandthatallowsconfiguringorreadingthethresholdfortheVINOver-voltageWarningdetection.
ReadingandwritingtothisregistershouldusethecoefficientsshowninTable44.
AccessestothiscommandshouldusethePMBusreadorwritewordprotocol.
IfthemeasuredvalueofVINrisesabovethevalueinthisregister,VINOVWarnflagsaresetintherespectiveregisters,andtheSMBAsignalisasserted.
Table7.
VIN_OV_WARN_LIMITRegisterValueMeaningDefault0h–0FFFhVINOver-voltageWarningdetectionthreshold0FFFh(disabled)0FFFhVINOver-voltageWarningdisabledn/aVIN_UV_WARN_LIMIT(58h)TheVIN_UV_WARN_LIMITisastandardPMBuscommandthatallowsconfiguringorreadingthethresholdfortheVINUnder-voltageWarningdetection.
ReadingandwritingtothisregistershouldusethecoefficientsshowninTable44.
AccessestothiscommandshouldusethePMBusreadorwritewordprotocol.
IfthemeasuredvalueofVINfallsbelowthevalueinthisregister,VINUVWarnflagsaresetintherespectiveregisters,andtheSMBAsignalisasserted.
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comSNVS824C–JUNE2012–REVISEDMARCH2013Table8.
VIN_UV_WARN_LIMITRegisterValueMeaningDefault1h–0FFFhVINUnder-voltageWarningdetection0000h(disabled)threshold0000hVINUnder-voltageWarningdisabledn/aIIN_OC_WARN_LIMIT(5Dh)TheIIN_OC_WARN_LIMITcommandisastandardPMBuscommandthatallowsconfiguringorreadingthethresholdfortheinputcurrent,overcurrentwarning.
ForaccesstothiscommandusethePMBusReadorWritewordprotocol.
Thecoefficientsshowintable43.
ToreaddatausetheSMBusReadWordprotocol.
TowritedatausetheSMBusWriteWordprotocol.
Setstheinputcurrentthresholdabovewhichawarningwillbegenerated.
(MirroratD3h)STATUS_BYTE(78h)TheSTATUS_BYTEcommandisastandardPMBuscommandthatreturnsthevalueofanumberofflagsindicatingthestateoftheLM25066I/A.
AccessestothiscommandshouldusethePMBusreadbyteprotocol.
Toclearbitsinthisregister,theunderlyingfaultshouldberemovedandaCLEAR_FAULTScommandissued.
Table9.
STATUS_BYTEDefinitionsBitNAMEMeaningDefault7BUSYNotSupported,always006OFFThisbitisassertediftheMOSFETisnotswitchedonforanyreason.
05VOUTOVNotSupported,always004IOUTOCOCFaultorOPFault03VINUVFAULTAVINUnder-voltageFaulthasoccurred02TEMPERATUREATemperatureFaultorWarninghasoccurred01CMLACommunicationFaulthasoccurred00NoneoftheAboveAfaultorwarningnotlistedinbits[7:1]hasoccurred1STATUS_WORD(79h)TheSTATUS_WORDcommandisastandardPMBuscommandthatreturnsthevalueofanumberofflagsindicatingthestateoftheLM25066I/A.
AccessestothiscommandshouldusethePMBusreadwordprotocol.
Toclearbitsinthisregister,theunderlyingfaultshouldberemovedandaCLEAR_FAULTScommandissued.
TheINPUTandVINUVFAULTflagswilldefaultto1onstartup.
However,theywillbeclearedto0afterthefirsttimetheinputvoltageexceedstheresistorprogrammedUVLOthreshold.
Table10.
STATUS_WORDDefinitionsBitNAMEMeaningDefault15VOUTAnoutputvoltagefaultorwarninghasoccurred014IOUT/POUTNotSupported,always0013INPUTAninputvoltageorcurrentfaulthasoccurred012FETFailFETFail011POWERGOODThePowerGoodsignalhasbeennegated110FANSNotSupported,always009CBFaultCircuitBreakerFaulthasoccurred08UNKNOWNNotSupported,always007BUSYNotSupported,always006OFFThisbitisassertediftheMOSFETisnotswitchedonforanyreason.
05VOUTOVNotSupported,always004IOUTOC/OPIINovercurrentfaultorFETdissapationfault03VINUVFAULTAVINUnder-voltageFaulthasoccurred02TEMPERATUREATemperatureFaultorWarninghasoccurred0Copyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback35ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
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comTable10.
STATUS_WORDDefinitions(continued)BitNAMEMeaningDefault1CMLACommunicationFaulthasoccurred00NoneoftheAboveAfaultorwarningnotlistedinbits[7:1]hasoccurred1STATUS_VOUT(7Ah)TheSTATUS_VOUTcommandisastandardPMBuscommandthatreturnsthevalueoftheVOUTUVWarningflag.
AccessestothiscommandshouldusethePMBusreadbyteprotocol.
Toclearbitsinthisregister,theunderlyingfaultshouldberemovedandaCLEAR_FAULTScommandissued.
Table11.
STATUS_VOUTDefinitionsBitNAMEMeaningDefault7VOUTOVFaultNotSupported,always006VOUTOVWarnNotSupported,always005VOUTUVWarnAVOUTUnder-voltageWarninghasoccurred04VOUTUVFaultNotSupported,always003VOUTMaxNotSupported,always002TONMaxFaultNotSupported,always001TOFFMaxFaultNotSupported,always000VOUTTrackingErrorNotSupported,always00STATUS_INPUT(7Ch)TheSTATUS_INPUTcommandisastandardPMBuscommandthatreturnsthevalueofanumberofflagsrelatedtoinputvoltage,current,andpower.
AccessestothiscommandshouldusethePMBusreadbyteprotocol.
Toclearbitsinthisregister,theunderlyingfaultshouldberemovedandaCLEAR_FAULTScommandissued.
TheVINUVWarnflagwilldefaultto1onstartup.
However,itwillbeclearedto0afterthefirsttimetheinputvoltageexceedstheresistorprogrammedUVLOthreshold.
Table12.
STATUS_INPUTDefinitionsBitNAMEMeaningDefault7VINOVFaultAVINOver-voltageFaulthasoccurred06VINOVWarnAVINOver-voltageWarninghasoccurred05VINUVWarnAVINUnder-voltageWarninghasoccurred14VINUVFaultAVINUnder-voltageFaulthasoccurred03InsufficientVoltageNotSupported,always002IINOCFaultAnIINOver-currentFaulthasoccurred01IINOCWarnAnIINOver-currentWarninghasoccurred00PINOPWarnAPINOver-powerWarninghasoccurred0STATUS_TEMPERATURE(7Dh)TheSTATUS_TEMPERATUREisastandardPMBuscommandthatreturnsthevalueoftheofanumberofflagsrelatedtothetemperaturetelemetryvalue.
AccessestothiscommandshouldusethePMBusreadbyteprotocol.
Toclearbitsinthisregister,theunderlyingfaultshouldberemovedandaCLEAR_FAULTScommandissued.
Table13.
STATUS_TEMPERATUREDefinitionsBitNAMEMeaningDefault7OvertempFaultAnOvertemperatureFaulthasoccurred06OvertempWarnAnOvertemperatureWarninghasoccurred05UndertempWarnNotSupported,always004UndertempFaultNotSupported,always003reservedNotSupported,always0036SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013Table13.
STATUS_TEMPERATUREDefinitions(continued)BitNAMEMeaningDefault2reservedNotSupported,always001reservedNotSupported,always000reservedNotSupported,always00STATUS_CML(7Eh)TheSTATUS_CMLcommandisastandardPMBuscommandthatreturnsthevalueofanumberofflagsrelatedtocommunicationfaults.
AccessestothiscommandshouldusethePMBusreadbyteprotocol.
Toclearbitsinthisregister,aCLEAR_FAULTScommandshouldbeissued.
Table14.
STATUS_CMLDefinitionsBitNAMEDefault7Invalidorunsupportedcommandreceived06Invalidorunsupporteddatareceived05PacketErrorCheckfailed04MemoryFaultDetectedNotsupported,always003ProcessorFaultDetectedNotsupported,always002Reserved,always001Miscellaneouscommunicationsfaulthasoccurred00OthermemoryorlogicfaultdetectedNotsupported,always00STATUS_OTHER(7Fh)BitNAMEDefault7Reserved:always006Reserved:always005CBFault04Notsupported:Always003Notsupported:Always002Notsupported:Always001Notsupported:Always000Notsupported:Always00STATUS_MFR_SPECIFIC(80h)TheSTATUS_MFR_SPECIFICcommandisastandardPMBuscommandthatcontainsmanufacturerspecificstatusinformation.
AccessestothiscommandshouldusethePMBusreadbyteprotocol.
Toclearbitsinthisregister,theunderlyingfaultshouldberemovedandaCLEAR_FAULTScommandshouldbeissued.
ThedefaultloadedstatusdoesnotcreateanSMBAlertState.
Table15.
STATUS_MFR_SPECIFICDefinitionsBitMeaningDefault7Circuitbreakerfault06Ext.
MOSFETshortedfault05NotSupported,Always004Defaultsloaded(1)13Notsupported:Always002Notsupported:Always001Notsupported:Always000Notsupported:Always00(1)Bit4,Defaultsloaded,doesnotsetanSMBAlert.
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comREAD_EIN(86h)TheREAD_EINcommandisastandardPMBuscommandthatreturnsinformationthehostcanusetocalculateaverageinputpowerconsumption.
AccessestothiscommandshouldusethePMBusBlockReadprotocol.
Informationprovidedbythiscommandisindependentofanydevicespecificaveragingperiod.
Sixbytesofdataarereturnedbythiscommand.
Thefirsttwobytesarethetwo'scomplement,signedoutputofanaccumulatorthatcontinuouslysumssamplesoftheinstantaneousinputpower.
ThesetwodatabytesareformattedintheDIRECTformat.
Thethirddatabyteisacountoftherollovereventsfortheaccumulator.
Thisbyteisanunsignedintegerindicatingthenumberoftimesthattheaccumulatorhasrolledoverfromit'smaximumpositivevalue(7FFFh)tozero.
Thelastthreedatabytesarea24bitunsignedintegerthatcountsthenumberofsamplesoftheinstantaneousinputpowerthathavebeenappliedtotheaccumulator.
Thecombinationoftheaccumulatorandtherollovercountmayoverflowwithinafewseconds.
Itislefttothehostsoftwaretodetectthisoverflowandhandleitappropriately.
Similarly,thesamplecountvaluewilloverflow,butthiseventonlyoccursonceeveryfewhours.
ToconvertthedataobtainedwiththeREAD_EINcommandtoaveragepower,firstconverttheaccumulatorandrollovercounttoanunsignedinteger:Accumulator_23=(rollover_count<<15)+accumulatoroverflowdetectionandhandlingshouldbedoneonthe23bitsofaccumulatordataandthesamplecountnow.
Datafromthepreviouscalculationshouldbesavedandwillbeusedinthiscalculationtogettheunscaledaveragepower:(36)Where:accumulator_23[n]=overflowcorrected,23bitaccumulatordatafromthisreadSample_count[n]=Samplecountdatafromthisreadaccumulator_23[n-1]=overflowcorrected,23bitaccumulatordatafrompreviousreadSample_count[n-1]=SampleCountdatafrompreviousreadunscaledAveragePowerisnowinthesameunitsasthedatafromtheREAD_PINcommand.
CoefficientsfromTable43areusedtoconverttheUnscaledAveragePowertoWatts.
Table16.
READ_EINBitMeaningDefault0SampleCountHighbyte01SampleCountMidbyte02SampleCountLowbyte03PowerAccumulatorRolloverCount04PowerAccumulatorHighByte05PowerAccumulatorLowByte06NumberofBytes6READ_VIN(88h)TheREAD_VINcommandisastandardPMBuscommandthatreturnsthe12-bitmeasuredvalueoftheinputvoltage.
ReadingthisregistershouldusethecoefficientsshowninTable44.
AccessestothiscommandshouldusethePMBusreadwordprotocol.
ThisvalueisalsousedinternallyfortheVINOverandUnderVoltageWarningdetection.
Table17.
READ_VINRegisterValueMeaningDefault0h–0FFFhMeasuredvalueforVIN0000h38SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013READ_VOUT(8Bh)TheREAD_VOUTcommandisastandardPMBuscommandthatreturnsthe12-bitmeasuredvalueoftheoutputvoltage.
ReadingthisregistershouldusethecoefficientsshowninTable44.
AccessestothiscommandshouldusethePMBusreadwordprotocol.
ThisvalueisalsousedinternallyfortheVOUTUnderVoltageWarningdetection.
Table18.
READ_VOUTRegisterValueMeaningDefault0h–0FFFhMeasuredvalueforVOUT0000hREAD_IIN(89h)TheREAD_IINcommandisastandardPMBuscommandthatreturnsthe12-bitmeasuredvalueoftheinputcurrent.
Returnsinstantaneouscurrent.
ReadingthisregistershouldusethecoefficientsshowninTable44.
AccessestothiscommandshouldusethePMBusreadwordprotocol.
Thisvalueisalsomirroredat(D1H)Table19.
READ_IINRegisterValueMeaningDefault0h–0FFFhMeasuredvalueforIIN0000hREAD_PIN(97h)TheREAD_IINcommandisastandardPMBuscommandthatreturnsthe12-bitmeasuredvalueoftheinputcurrent.
ReturnsaveragepowerReadingthisregistershouldusethecoefficientsshowninTable44.
AccessestothiscommandshouldusethePMBusreadwordprotocol.
Thisvalueisalsomirroredat(DFh)Table20.
READ_PINRegisterValueMeaningDefault0h–0FFFhMeasuredvalueforPIN0000hREAD_TEMPERATURE_1(8Dh)TheREAD_TEMPERATURE_1commandisastandardPMBuscommandthatreturnsthesignedvalueofthetemperaturemeasuredbytheexternaltemperaturesensediode.
ReadingthisregistershouldusethecoefficientsshowninTable44.
AccessestothiscommandshouldusethePMBusreadwordprotocol.
ThisvalueisalsousedinternallyfortheOverTemperatureFaultandWarningdetection.
Thisdatahasarangeof-256°Cto+255°Cafterthecoefficientsareapplied.
Table21.
READ_TEMPERATURE_1RegisterValueMeaningDefault0h–0FFFhMeasuredvalueforTEMPERATURE0000hMFR_ID(99h)TheMFR_IDcommandisastandardPMBuscommandthatreturnstheidentificationofthemanufacturer.
ToreadtheMFR_ID,usethePMBusblockreadprotocol.
Table22.
MFR_IDRegisterByteNameValue0Numberofbytes02h1MFRID-154h'T'2MFRID-249h'I'Copyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback39ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
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comMFR_MODEL(9Ah)TheMFR_MODELcommandisastandardPMBuscommandthatreturnsthepartnumberofthechip.
ToreadtheMFR_MODEL,usethePMBusblockreadprotocol.
Table23.
MFR_MODELRegisterByteNameValue0Numberofbytes08h1MFRID-14Ch'L'2MFRID-24Dh'M'3MFRID-332h'2'4MFRID-435h'5'5MFRID-530h'0'6MFRID-636h'6'7MFRID-736h'6'8MFRID-849h'I'MFR_REVISION(9Bh)TheMFR_REVISIONcommandisastandardPMBuscommandthatreturnstherevisionlevelofthepart.
ToreadtheMFR_REVISION,usethePMBusblockreadprotocol.
Table24.
MFR_REVISIONRegisterByteNameValue0Numberofbytes02h1MFRID-141h'A'2MFRID-241h'A'ManufacturerSpecificPMBusCommandsMFR_SPECIFIC_00:READ_VAUX(D0h)TheREAD_VAUXcommandwillreportthe12-bitADCmeasuredauxiliaryvoltage.
Voltagesgreaterthanorequalto1.
16Vtogroundwillbereportedatplusfullscale(0FFFh).
Voltageslessthanorequalto0Vreferencedtogroundwillbereportedas0(0000h).
CoefficientsfortheVAUXvaluearedependentonthevalueoftheexternaldivider(ifused).
ToreaddatafromtheREAD_VAUXcommand,usethePMBusReadWordprotocol.
Table25.
READ_VAUXRegisterValueMeaningDefault0h–0FFFhMeasuredvalueforVAUXinput0000hMFR_SPECIFIC_01:MFR_READ_IIN(D1h)TheMFR_READ_IINcommandwillreportthe12-bitADCmeasuredcurrentsensevoltage.
ToreaddatafromtheMFR_READ_IINcommand,usethePMBusReadWordprotocol.
ReadingthisregistershouldusethecoefficientsshowninTable44.
Pleaseseethesectiononcoefficientcalculationstocalculatethevaluestouse.
Table26.
MFR_READ_IINRegisterValueMeaningDefault0h–0FFFhMeasuredvalueforinputcurrentsensevoltage0000h40SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013MFR_SPECIFIC_02:MFR_READ_PIN(D2h)TheMFR_READ_PINcommandwillreporttheupper12bitsoftheVINxIINproductasmeasuredbythe12-bitADC.
ToreaddatafromtheMFR_READ_PINcommand,usethePMBusReadWordprotocol.
ReadingthisregistershouldusethecoefficientsshowninTable44.
Pleaseseethesectiononcoefficientcalculationstocalculatethevaluestouse.
Table27.
MFR_READ_PINRegisterValueMeaningDefault0h–0FFFhValueforinputcurrentxinputvoltage0000hMFR_SPECIFIC_03:MFR_IN_OC_WARN_LIMIT(D3h)TheMFR_IIN_OC_WARN_LIMITPMBuscommandsetstheinputover-currentwarningthreshold.
Intheeventthattheinputcurrentrisesabovethevaluesetinthisregister,theIINover-currentflagsaresetinthestatusregistersandtheSMBAisasserted.
ToaccesstheMFR_IIN_OC_WARN_LIMITregister,usethePMBusRead/WriteWordprotocol.
Reading/writingtothisregistershouldusethecoefficientsshowninTable44.
Table28.
MFR_IIN_OC_WARN_LIMITRegisterValueMeaningDefault0h–0FFFhValueforinputover-currentwarnlimit0FFFh0FFFhInputover-currentwarningdisabledn/aMFR_SPECIFIC_04:MFR_PIN_OP_WARN_LIMIT(D4h)TheMFR_PIN_OP_WARN_LIMITPMBuscommandsetstheinputover-powerwarningthreshold.
Intheeventthattheinputpowerrisesabovethevaluesetinthisregister,thePINOver-powerflagsaresetinthestatusregistersandtheSMBAisasserted.
ToaccesstheMFR_PIN_OP_WARN_LIMITregister,usethePMBusRead/WriteWordprotocol.
Reading/writingtothisregistershouldusethecoefficientsshowninTable44.
Table29.
MFR_PIN_OP_WARN_LIMITRegisterValueMeaningDefault0h–0FFFhValueforinputover-powerwarnlimit0FFFh0FFFhInputover-powerwarningdisabledn/aMFR_SPECIFIC_05:READ_PIN_PEAK(D5h)TheREAD_PIN_PEAKcommandwillreportthemaximuminputpowermeasuredsinceaPower-On-ResetorthelastCLEAR_PIN_PEAKcommand.
ToaccesstheREAD_PIN_PEAKcommand,usethePMBusReadWordprotocol.
UsethecoefficientsshowninTable44.
Table30.
READ_PIN_PEAKRegisterValueMeaningDefault0h–0FFFhMaximumvalueforinputcurrentxinputvoltagesinceresetorlastclear0hMFR_SPECIFIC_06:CLEAR_PIN_PEAK(D6h)TheCLEAR_PIN_PEAKcommandwillclearthePIN_PEAKregister.
ThiscommandusesthePMBusSendByteprotocol.
MFR_SPECIFIC_07:GATE_MASK(D7h)TheGATE_MASKregisterallowsthehardwaretopreventfaultconditionsfromswitchingofftheMOSFET.
Whenthebitishigh,thecorrespondingFAULThasnocontrolovertheMOSFETgate.
Allstatusregisterswillstillbeupdated(STATUS,DIAGNOSTIC)andanSMBAwillstillbeissued.
ThisregisterisaccessedwiththePMBusRead/WriteByteprotocol.
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comWARNINGInhibitingtheMOSFETswitchoffinresponsetoover-currentorcircuitbreakerfaultconditionswilllikelyresultinthedestructionoftheMOSFET!
Thisfunctionalityshouldbeusedwithgreatcareandsupervision!
Table31.
GATE_MASKRegisterBitNAMEDefault7Notused,always006Notused,always005VINUVFAULT04VINOVFAULT03IIN/PFETFAULT02OVERTEMPFAULT01Notused,always000CIRCUITBREAKERFAULT0TheIIN/PFETFaultreferstotheinputcurrentfaultandtheMOSFETpowerdissipationfault.
Thereisnoinputpowerfaultdetection,onlyinputpowerwarningdetection.
MFR_SPECIFIC_08:ALERT_MASK(D8h)TheALERT_MASKisusedtomasktheSMBAwhenaspecificfaultorwarninghasoccurred.
Eachbitcorrespondstooneofthe14differentanaloganddigitalfaultsorwarningsthatwouldnormallyresultinanSMBAbeingset.
Whenthecorrespondingbitishigh,thatconditionwillnotcausetheSMBAtobeasserted.
Ifthatconditionoccurs,theregisterswherethatconditioniscapturedwillstillbeupdated(STATUSregisters,DIAGNOSTIC_WORD)andtheexternalMOSFETgatecontrolwillstillbeactive(VIN_OV_FAULT,VIN_UV_FAULT,IIN/PFET_FAULT,CB_FAULT,OT_FAULT).
ThisregisterisaccessedwiththePMBusRead/WriteWordprotocol.
TheVINUNDERVOLTGEFAULTflagwilldefaultto1onstartup.
However,itwillbeclearedto0afterthefirsttimetheinputvoltageexceedstheresistorprogrammedUVLOthreshold.
Table32.
ALERT_MASKDefinitionsBITNAMEDEFAULT15VOUTUNDERVOLTAGEWARN114IINLIMITWarn113VINUNDERVOLTAGEWARN112VINOVERVOLTAGEWARN111POWERGOOD110OVERTEMPWARN19NotUsed,always008OVERPOWERLIMITWARN17NotUsed,always006EXT_MOSFET_SHORTED05VINUNDERVOLTAGEFAULT(1)04VINOVERVOLTAGEFAULT03IIN/PFETFAULT02OVERTEMPERATUREFAULT11CMLFAULT(CommunicationsFault)00CIRCUITBREAKERFAULT0(1)VIN_UV_FAULTinitializesafterpowerupasmasked.
WhenVINexceedsthehardwarethresholdthemaskbitisautomaticallycleared.
42SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013MFR_SPECIFIC_09:DEVICE_SETUP(D9h)TheDEVICE_SETUPcommandmaybeusedtooverridepinsettingstodefineoperationoftheLM25066I/Aunderhostcontrol.
ThiscommandisaccessedwiththePMBusread/writebyteprotocol.
Table33.
DEVICE_SETUPByteFormatBitNameMeaning7:5Retrysetting111=Unlimitedretries110=Retry16times101=Retry8times100=Retry4times011=Retry2times010=Retry1time001=Noretries000=Pinconfiguredretries4Currentlimitsetting0=Lowsetting(25mV)1=Highsetting(46mV)3CB/CLRatio0=Lowsetting(1.
8x)1=Highsetting(3.
6x)2CurrentlimitConfiguration0=Usepinsettings1=UseSMBussettings1CircuitBreakerConfiguration0=Usepinsettings1=UseSMBussettings0UnusedInordertoconfiguretheCurrentLimitSettingviathisregister,itisnecessarytosettheCurrentLimitConfigurationbit(2)to1toenabletheregistertocontrolthecurrentlimitfunctionandtheCurrentLimitSettingbit(4)toselectthedesiredsetting.
Similarly,inordertocontroltheCircuitBreakerviathisregister,itisnecessarytosettheCircuitBreakerConfigurationbit(1)to1toenabletheregistertocontroltheCircuitBreakerSetting,andtheCircuitBreaker/CurrentLimitRatiobit(3)tothedesiredvalue.
IftherespectiveConfigurationbitsarenotset,theSettingswillbeignoredandthepinsetvaluesused.
TheCurrentLimitConfigurationeffectsthecoefficientsusedfortheCurrentandPowermeasurementsandwarningregisters.
MFR_SPECIFIC_10:BLOCK_READ(DAh)TheBLOCK_READcommandconcatenatestheDIAGNOSTIC_WORDwithinputandoutputtelemetryinformation(IIN,VOUT,VIN,PIN)aswellasTEMPERATUREtocapturealloftheoperatinginformationoftheLM25066I/AinasingleSMBustransaction.
Theblockis12byteslongwithtelemetryinformationbeingsentoutinthesamemannerasifanindividualREAD_XXXcommandhadbeenissued(shownbelow).
Thecontentsoftheblockreadregisterareupdatedeveryclockcycle(85ns)aslongastheSMBusinterfaceisidle.
BLOCK_READalsospecifiesthattheVIN,VOUT,IINandPINmeasurementsarealltime-alignedwhereasthereisachancetheymaynotbeifreadwithindividualPMBuscommands.
TheBLOCK_READcommandisreadviathePMBusblockreadprotocol.
Table34.
BLOCK_READRegisterFormatByteCount(always12)(1byte)DIAGNOSTIC_WORD(1Word)IIN_BLOCK(1Word)VOUT_BLOCK(1Word)VIN_BLOCK(1Word)PIN_BLOCK(1Word)TEMP_BLOCK(1Word)Copyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback43ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
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comMFR_SPECIFIC_11:SAMPLES_FOR_AVG(DBh)TheSAMPLES_FOR_AVERAGEisamanufacturerspecificcommandforsettingthenumberofsamplesusedincomputingtheaveragevaluesforIIN,VIN,VOUT,PIN.
ThedecimalequivalentoftheAVGNnibbleisthepowerof2samples(e.
g.
AVGN=12equatesto4096samplesusedincomputingtheaverage).
TheLM25066I/Asupportsaveragenumbersof1,2,4,8,16,32,64,128,256,512,1024,2048,4096.
TheSAMPLES_FOR_AVGnumberappliestoaveragevaluesofIIN,VIN,VOUT,PINsimultaneously.
TheLM25066I/Ausessimpleaveraging.
Thisisaccomplishedbysummingconsecutiveresultsuptothenumberprogrammed,thendividingbythenumberofsamples.
Averagingiscalculatedaccordingtothefollowingsequence:Y=(X(N)+X(N-1)X(0))/2AVGN(37)Whentheaveraginghasreachedtheendofasequence(forexample,4096samplesareaveraged),thenawholenewsequencebeginsthatwillrequirethesamenumberofsamples(inthisexample,4096)tobetakenbeforethenewaverageisready.
Table35.
SAMPLES_FOR_AVGRegisterAVGNN=2AVGNaveragesAveraging/RegisterUpdatePeriod(ms)000011000122001044001188010016160101323201106464011112812810002562561001512512101010241024101120482048110040964096NotethatachangeintheSAMPLES_FOR_AVGregisterwillnotbereflectedintheaveragetelemetrymeasurementsuntilthepresentaveragingintervalhascompleted.
ThedefaultsettingforAVGNis0000andthereforetheaveragetelemetrywillmirrortheinstantaneoustelemetryuntilavaluehigherthanzeroisprogrammed.
TheSAMPLES_FOR_AVGregisterisaccessedviathePMBusread/writebyteprotocol.
Table36.
SAMPLES_FOR_AVGRegisterValueMeaningDefault0h–0ChExponent(AVGN)fornumberofsamplestoaverageover00hMFR_SPECIFIC_12:READ_AVG_VIN(DCh)TheREAD_AVG_VINcommandwillreportthe12-bitADCmeasuredinputaveragevoltage.
Ifthedataisnotready,thereturnedvaluewillbethepreviousaverageddata.
However,ifthereisnopreviouslyaverageddata,thedefaultvalue(0000h)willbereturned.
ThisdataisreadwiththePMBusReadWordprotocol.
ThisregistershouldusethecoefficientsshowninTable44.
Table37.
READ_AVG_VINRegisterValueMeaningDefault0h–0FFFhAverageofmeasuredvaluesforinputvoltage0000h44SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013MFR_SPECIFIC_13:READ_AVG_VOUT(DDh)TheREAD_AVG_VOUTcommandwillreportthe12-bitADCmeasuredaverageoutputvoltage.
Thereturnedvaluewillbethedefaultvalue(0000h)orpreviousdatawhentheaveragedataisnotready.
ThisdataisreadwiththePMBusReadWordprotocol.
ThisregistershouldusethecoefficientsshowninTable44.
Table38.
READ_AVG_VOUTRegisterValueMeaningDefault0h–0FFFhAverageofmeasuredvaluesforoutputvoltage0000hMFR_SPECIFIC_14:READ_AVG_IIN(DEh)TheREADAVG_IINcommandwillreportthe12-bitADCmeasuredcurrentsenseaveragevoltage.
Thereturnedvaluewillbethedefaultvalue(0000h)orpreviousdatawhentheaveragedataisnotready.
ThisdataisreadwiththePMBusReadWordprotocol.
ThisregistershouldusethecoefficientsshowninTable44.
Table39.
READ_AVG_IINRegisterValueMeaningDefault0h–0FFFhAverageofmeasuredvaluesforcurrentsensevoltage0000hMFR_SPECIFIC_15:READ_AVG_PIN(DFh)TheREAD_AVG_PINcommandwillreporttheupper12bitsoftheaverageVINxIINproductasmeasuredbythe12-bitADC.
Youwillreadthedefaultvalue(0000h)orpreviousdatawhentheaveragedataisnotready.
ThisdataisreadwiththePMBusReadWordprotocol.
ThisregistershouldusethecoefficientsshowninTable44.
Table40.
READ_AVG_PINRegisterValueMeaningDefault0h–0FFFhAverageofmeasuredvalueforinputvoltagexinputcurrentsensevoltage0000hMFR_SPECIFIC_16:BLACK_BOX_READ(E0h)TheBLACK_BOX_READcommandretrievestheBLOCK_READdatawhichwaslatchedinatthefirstassertionofSMBA.
Itisre-armedwiththeCLEAR_FAULTScommand.
ItisthesameformatastheBLOCK_READregisters,theonlydifferencebeingthatitscontentsareupdatedwiththeSMBAedgeratherthantheinternalclockedge.
ThiscommandisreadwiththePMBusBlockReadprotocol.
MFR_SPECIFIC_17:READ_DIAGNOSTIC_WORD(E1h)TheREAD_DIAGNOSTIC_WORDPMBuscommandwillreportalloftheLM25066I/Afaultsandwarningsinasinglereadoperation.
ThestandardresponsetotheassertionoftheSMBAsignalofissuingmultiplereadrequeststovariousstatusregisterscanbereplacedbyasinglewordreadtotheDIAGNOSTIC_WORDregister.
TheREAD_DIAGNOSTIC_WORDcommandshouldbereadwiththePMBusReadWordprotocol.
TheDIAGNOSTIC_WORDisalsoreturnedintheBLOCK_READ,BLACK_BOX_READ,andAVG_BLOCK_READoperations.
Table41.
READ_DIAGNOSTIC_WORDFormatBitMeaningDefault15VOUT_UNDERVOLTAGE_WARN014IIN_OP_WARN013VIN_UNDERVOLTAGE_WARN012VIN_OVERVOLTAGE_WARN011POWERGOOD110OVER_TEMPERATURE_WARN0Copyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback45ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
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comTable41.
READ_DIAGNOSTIC_WORDFormat(continued)BitMeaningDefault9TIMER_LATCHED_OFF08EXT_MOSFET_SHORTED07CONFIG_PRESET16DEVICE_OFF15VIN_UNDERVOLTAGE_FAULT14VIN_OVERVOLTAGE_FAULT03IIN_OC/PFET_OP_FAULT02OVER_TEMPERATURE_FAULT01CML_FAULT00CIRCUIT_BREAKER_FAULT0MFR_SPECIFIC_18:AVG_BLOCK_READ(E2h)TheAVG_BLOCK_READcommandconcatenatestheDIAGNOSTIC_WORDwithinputandoutputaveragetelemetryinformation(IIN,VOUT,VIN,PIN)aswellasTEMPERATUREtocapturealloftheoperatinginformationofthepartinasinglePMBustransaction.
Theblockis12byteslongwithtelemetryinformationbeingsentoutinthesamemannerasifanindividualREAD_AVG_XXXcommandhadbeenissued(shownbelow).
AVG_BLOCK_READalsospecifiesthattheVIN,VOUT,PIN,andIINmeasurementsarealltime-alignedwhereasthereisachancetheymaynotbeifreadwithindividualPMBuscommands.
ToreaddatafromtheAVG_BLOCK_READcommand,usetheSMBusBlockReadprotocol.
Table42.
AVG_BLOCK_READRegisterFormatByteCount(always12)(1byte)DIAGNOSTIC_WORD(1word)AVG_IIN(1word)AVG_VOUT(1word)AVG_VIN(1word)AVG_PIN(1word)TEMPERATURE(1word)46SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013Figure49.
Command/RegisterandAlertFlowDiagramCopyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback47ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
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comReadingandWritingTelemetryDataandWarningThresholdsAllmeasuredtelemetrydataanduserprogrammedwarningthresholdsarecommunicatedin12bittwo'scomplimentbinarynumbersread/writtenin2byteincrementsconformingtotheDirectformatasdescribedinsection8.
3.
3ofthePMBusPowerSystemManagementProtocolSpecification1.
1(PartII).
TheorganizationofthebitsinthetelemetryorwarningwordisshowninTable43,whereBit_11isthemostsignificantbit(MSB)andBit_0istheleastsignificantbit(LSB).
Thedecimalequivalentofallwarningandtelemetrywordsareconstrainedtobewithintherangeof0to4095,withtheexceptionoftemperature.
Thedecimalequivalentvalueofthetemperaturewordrangesfrom0to65535.
Table43.
TelemetryandWarningWordFormatByteB7B6B5B4B3B2B1B01Bit_7Bit_6Bit_5Bit_4Bit_3Bit_2Bit_1Bit_020000Bit_11Bit_10Bit_9Bit_8Conversionfromdirectformattorealworlddimensionsofcurrent,voltage,power,andtemperatureisaccomplishedbydeterminingappropriatecoefficientsasdescribedinsection7.
2.
1ofthePMBusPowerSystemManagementProtocolSpecification1.
1(PartII).
Accordingtothisspecification,thehostsystemconvertsthevaluesreceivedintoareadingofvolts,amperes,watts,orotherunitsusingthefollowingrelationship:(38)where:X:thecalculated"realworld"value(volts,amps,watt,etc.
)m:theslopecoefficientY:atwobytetwo'scomplementintegerreceivedfromdeviceb:theoffset,atwobytetwo'scomplementintegerR:theexponent,aonebytetwo'scomplementintegerRisonlynecessaryinsystemswheremisrequiredtobeaninteger(forexample,wheremmaybestoredinaregisterinanintegratedcircuit).
Inthosecases,Ronlyneedstobelargeenoughtoyieldthedesiredaccuracy.
Table44.
Current,PowerandWarningConversionCoefficients(RSinm)CommandsConditionFormatNumberofmbRUnitDataBytesREAD_VIN,READ_AVG_VINDIRECT222070-1800-2VVIN_OV_WARN_LIMITVIN_UV_WARN_LIMITREAD_VOUT,READ_AVG_VOUTDIRECT222070-1800-2VVOUT_UV_WARN_LIMITREAD_VAUXDIRECT23546-30VREAD_IIN,READ_AVG_IINCL=GNDDIRECT213661xRS-5200-2AMFR_IIN_OC_WARN_LIMITREAD_IIN,READ_AVG_IINCL=VDDDIRECT26854xRS-3100-2AMFR_IIN_OC_WARN_LIMITREAD_PIN,READ_AVG_PIN,CL=GNDDIRECT2736xRS-3300-2WREAD_PIN_PEAKMFR_PIN_OP_WARN_LIMITREAD_PIN,READ_AVG_PIN,CL=VDDDIRECT2369xRS-1900-2WREAD_PIN_PEAKMFR_PIN_OP_WARN_LIMITREAD_TEMPERATURE_1DIRECT2160000-3°COT_WARN_LIMITOT_FAULT_LIMITREAD_PIN,READ_AVG_PIN,CL=VDDDIRECT2369xRS-1900-2WREAD_PIN_PEAKMFR_PIN_OP_WARN_LIMIT48SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
ti.
comSNVS824C–JUNE2012–REVISEDMARCH2013Table45.
Current,PowerandWarningConversionCoefficients(RSinm)CommandsConditionFormatNumberofmbRUnitDataBytes*READ_IIN,READ_AVG_IINCL=GNDDIRECT213661xRS-5200-2AMFR_IIN_OC_WARN_LIMIT*READ_IIN,READ_AVG_IINCL=VDDDIRECT26854xRS-3100-2AMFR_IIN_OC_WARN_LIMIT*READ_PIN,READ_AVG_PIN,CL=GNDDIRECT2736xRS-3300-2WREAD_PIN_PEAKMFR_PIN_OP_WARN_LIMITCaremustbetakentoadjusttheexponentcoefficient,R,suchthatthevalueofmremainswithintherangeof-32768to+32767.
Forexample,ifa5msenseresistorisused,thecorrectcoefficientsfortheREAD_IINcommandwithCL=VDDwouldbem=6830,b=-310,R=-1.
ANoteonthe"b"CoefficientSincebcoefficientsrepresentoffset,forsimplificationbissettozerointhefollowingdiscussions.
DeterminingTelemetryCoefficientsEmpiricallywithLinearFitThecoefficientsfortelemetrymeasurementsandwarningthresholdspresentedinTable44areadequateforthemajorityofapplications.
Currentandpowercoefficientsmustbecalculatedperapplicationastheyaredependentonthevalueofthesenseresistor,RS,used.
Table45providestheequationsnecessaryforcalculatingthecurrentandpowercoefficientsforthegeneralcase.
ThesmallsignalnatureofthecurrentmeasurementmakeitandthepowermeasurementmoresusceptibletoPCBparasiticsthanothertelemetrychannels.
Thismaycauseslightvariationsintheoptimumcoefficients(m,b,R)forconvertingfromDirectFormatdigitalvaluestoreal-worldvalues(e.
g.
AmpsandWatts).
TheoptimumcoefficientscanbedeterminedempiricallyforaspecificapplicationandPCBlayoutusingtwoormoremeasurementsofthetelemetrychannelofinterest.
Thecurrentcoefficientscanbedeterminedusingthefollowingmethod:1.
WhiletheLM25066I/Aisinnormaloperation,measurethevoltageacrossthesenseresistorusingkelvintestpointsandahighaccuracyDVMwhilecontrollingtheloadcurrent.
RecordtheintegervaluereturnedbytheREAD_AVG_IINcommand(withtheSAMPLES_FOR_AVGsettoavaluegreaterthan0)fortwoormorevoltagesacrossthesenseresistor.
Forbestresults,theindividualREAD_AVG_IINmeasurementsshouldspannearlythefullscalerangeofthecurrent(forexample,voltageacrossRSof5mVand20mV).
2.
ConvertthemeasuredvoltagestocurrentsbydividingthembythevalueofRS.
Forbestaccuracy,thevalueofRSshouldbemeasured.
Table46assumesasenseresistorvalueof5m.
Table46.
MeasurementsforlinearfitdeterminationofcurrentcoefficientsMeasuredvoltageacrossMeasuredCurrent(A)READ_AVG_IINRS(V)(integervalue)0.
00516480.
01213310.
02426983.
Usingthespreadsheetormathprogramofyourchoice,determinetheslopeandthey-interceptvaluesreturnedbytheREAD_AVG_IINcommandversusthemeasuredcurrent.
ForthedatashowninTable46:–READ_AVG_IINvalue=slopex(MeasuredCurrent)+(y-intercept)–slope=683.
4–y-intercept=-35.
54.
Todeterminethe'm'coefficient,simplyshiftthedecimalpointofthecalculatedslopetoarriveatanintegerwithasuitablenumberofsignificantdigitsforaccuracy(typically4)whilestayingwiththerangeof-32768to+32767.
Thisshiftinthedecimalpointequatestothe'R'coefficient.
Fortheslopevalueshownabove,thedecimalpointwouldbeshiftedtotherightoncehenceR=-1.
5.
Oncethe'R'coefficienthasbeendetermined,the'b'coefficientisfoundbymultiplyingthey-interceptby10-R.
Inthiscasethevalueofb=-355.
–CalculatedCurrentCoefficients:–m=6834Copyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback49ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
ti.
com–b=-355–R=-1(39)where:X:thecalculated"realworld"value(volts,amps,watts,temperature)m:theslopecoefficient,athetwobytetwo'scomplementintegerY:atwobyte,two'scomplementintegerreceivedfromdeviceb:theoffset,atwobytetwo'scomplementintegerR:theexponent,aonebytetwo'scomplementintegerTheaboveprocedurecanberepeatedtodeterminethecoefficientsofanytelemetrychannelsimplybysubstitutingmeasuredcurrentforsomeotherparameter(e.
g.
power,voltage,etc.
).
WritingTelemetryDataThereareseverallocationsthatwillrequirewritingdataiftheiroptionalusageisdesired.
UsethesamecoefficientspreviouslycalculatedforyourapplicationandapplythemusingthismethodasprescribedbythePMBusrevisionsection7.
2.
2"SendingaValue"Y=(mX+b)x10R(40)where:X:thecalculated"realworld"value(volts,amps,watts,temperature)m:theslopecoefficient,atwobytetwo'scomplementintegerY:atwobytetwo'scomplementintegerreceivedfromdeviceb:theoffset,atwobytetwo'scomplementintegerR:theexponent,aonebytetwo'scomplementintegerPMBusAddressLines(ADR0,ADR1,ADR2)Thethreeaddresslinesaretobesethigh(connecttoVDD),low(connecttoGND),open(connecttoGND)toselectoneof27addressesforcommunicatingwiththeLM25066I/A.
Table47depicts7-bitaddresses(eighthbitisread/writebit):Table47.
DeviceAddressingADR2ADR1ADR0DecodedAddressZZZ40hZZ041hZZ142hZ0Z43hZ0044hZ0145hZ1Z46hZ1047hZ1110h0ZZ11h0Z012h0Z113h00Z14h00015h00116h50SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
ti.
comSNVS824C–JUNE2012–REVISEDMARCH2013Table47.
DeviceAddressing(continued)ADR2ADR1ADR0DecodedAddress01Z17h01050h01151h1ZZ52h1Z053h1Z154h10Z55h10056h10157h11Z58h11059h1115AhSMBusCommunicationsTimingRequirementsFigure50.
SMBusTimingDiagramTable48.
SMBusTimingDefinitionSymbolParameterLimitsUnitCommentsMinMaxFSMBSMBusOperatingFrequency10400kHzTBUFBusfreetimebetweenStopandStartCondition1.
3sTHD:STAHoldtimeafter(Repeated)StartCondition.
Afterthis0.
6speriod,thefirstclockisgenerated.
TSU:STARepeatedStartConditionsetuptime0.
6sTSU:STOStopConditionsetuptime0.
6sTHD:DATDataholdtime300nsTSU:DATDatasetuptime100nsTTIMEOUTClocklowtime-out2535ms(1)TLOWClocklowperiod1.
5sTHIGHClockhighperiod0.
6s(2)(1)DevicesparticipatinginatransferwilltimeoutwhenanyclocklowexceedsthevalueofTTIMEOUT,MINof25ms.
DevicesthathavedetectedatimeoutconditionmustresetthecommunicationnolaterthanTTIMEOUT,MAXof35ms.
Themaximumvaluemustbeadheredtobybothamasterandaslaveasitincorporatesthecumulativestretchlimitforbothamaster(10ms)andaslave(25ms).
(2)THIGHMAXprovidesasimplemethodfordevicestodetectbusidleconditions.
Copyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback51ProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IASNVS824C–JUNE2012–REVISEDMARCH2013www.
ti.
comTable48.
SMBusTimingDefinition(continued)SymbolParameterLimitsUnitCommentsMinMaxTLOW:SEXTCumulativeclocklowextendtime(slavedevice)25ms(3)TLOW:MEXTCumulativelowextendtime(masterdevice)10ms(4)TFClockorDataFallTime20300ns(5)TRClockorDataRiseTime20300ns(5)(3)TLOW:SEXTisthecumulativetimeaslavedeviceisallowedtoextendtheclockcyclesinonemessagefromtheinitialstarttothestop.
Ifaslaveexceedsthistime,itisexpectedtoreleasebothitsclockanddatalinesandresetitself.
(4)TLOW:MEXTisthecumulativetimeamasterdeviceisallowedtoextenditsclockcycleswithineachbyteofamessageasdefinedfromstart-to-ack,ack-to-ack,orack-to-stop.
(5)Riseandfalltimeisdefinedasfollows:TR=(VILMAX–0.
15)to(VIHMIN+0.
15)TF=0.
9VDDto(VILMAX–0.
15)SMBAResponseTheSMBAeffectivelyhastwomasks:1.
TheAlertMaskRegisteratD8h,and2.
TheARAAutomaticMask.
TheARAAutomaticMaskisamaskthatissetinresponsetoasuccessfulARAread.
AnARAreadoperationreturnsthePMBusaddressofthelowestaddressedpartonthebusthathasitsSMBAasserted.
AsuccessfulARAreadmeansthatTHISpartwastheonethatreturneditsaddress.
WhenapartrespondstotheARAread,itreleasestheSMBAsignal.
WhenthelastpartonthebusthathasanSMBAsethassuccessfullyreporteditsaddress,theSMBAsignalwillde-assert.
ThewaythattheLM25066I/AreleasestheSMBAsignalisbysettingtheARAAutomaticmaskbitforallfaultconditionspresentatthetimeoftheARAread.
Allstatusregisterswillstillshowthefaultcondition,butitwillnotgenerateanSMBAonthatfaultagainuntiltheARAAutomaticmaskisclearedbythehostissuingaClearFaultcommandtothispart.
ThisshouldbedoneasaroutinepartofservicinganSMBAconditiononapart,eveniftheARAreadisnotdone.
Figure51depictsaschematicversionofthisflow.
Figure51.
TypicalFlowSchematicforSMBAFault52SubmitDocumentationFeedbackCopyright2012–2013,TexasInstrumentsIncorporatedProductFolderLinks:LM25066ILM25066IALM25066I,LM25066IAwww.
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comSNVS824C–JUNE2012–REVISEDMARCH2013REVISIONHISTORYChangesfromRevisionB(March2013)toRevisionCPageChangedlayoutofNationalDataSheettoTIformat52Copyright2012–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback53ProductFolderLinks:LM25066ILM25066IAPACKAGEOPTIONADDENDUMwww.
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com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesLM25066IAPSQ/NOPBACTIVEWQFNNHZ241000RoHS&GreenSNLevel-3-260C-168HR-40to12525066IALM25066IAPSQE/NOPBACTIVEWQFNNHZ24250RoHS&GreenSNLevel-3-260C-168HR-40to12525066IALM25066IAPSQX/NOPBACTIVEWQFNNHZ244500RoHS&GreenSNLevel-3-260C-168HR-40to12525066IALM25066IPSQ/NOPBACTIVEWQFNNHZ241000RoHS&GreenSNLevel-3-260C-168HR-40to12525066ISLM25066IPSQE/NOPBACTIVEWQFNNHZ24250RoHS&GreenSNLevel-3-260C-168HR-40to12525066ISLM25066IPSQX/NOPBACTIVEWQFNNHZ244500RoHS&GreenSNLevel-3-260C-168HR-40to12525066IS(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
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PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
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Antimonytrioxidebasedflameretardantsmustalsomeetthe<=1000ppmthresholdrequirement.
(3)MSL,PeakTemp.
-TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclassifications,andpeaksoldertemperature.
(4)Theremaybeadditionalmarking,whichrelatestothelogo,thelottracecodeinformation,ortheenvironmentalcategoryonthedevice.
(5)MultipleDeviceMarkingswillbeinsideparentheses.
OnlyoneDeviceMarkingcontainedinparenthesesandseparatedbya"~"willappearonadevice.
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TAPEANDREELINFORMATION*AlldimensionsarenominalDevicePackageTypePackageDrawingPinsSPQReelDiameter(mm)ReelWidthW1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W(mm)Pin1QuadrantLM25066IAPSQ/NOPBWQFNNHZ241000178.
012.
44.
35.
31.
38.
012.
0Q1LM25066IAPSQE/NOPBWQFNNHZ24250178.
012.
44.
35.
31.
38.
012.
0Q1LM25066IAPSQX/NOPBWQFNNHZ244500330.
012.
44.
35.
31.
38.
012.
0Q1LM25066IPSQ/NOPBWQFNNHZ241000178.
012.
44.
35.
31.
38.
012.
0Q1LM25066IPSQE/NOPBWQFNNHZ24250178.
012.
44.
35.
31.
38.
012.
0Q1LM25066IPSQX/NOPBWQFNNHZ244500330.
012.
44.
35.
31.
38.
012.
0Q1PACKAGEMATERIALSINFORMATIONwww.
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0185.
035.
0LM25066IAPSQE/NOPBWQFNNHZ24250210.
0185.
035.
0LM25066IAPSQX/NOPBWQFNNHZ244500367.
0367.
035.
0LM25066IPSQ/NOPBWQFNNHZ241000210.
0185.
035.
0LM25066IPSQE/NOPBWQFNNHZ24250210.
0185.
035.
0LM25066IPSQX/NOPBWQFNNHZ244500367.
0367.
035.
0PACKAGEMATERIALSINFORMATIONwww.
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