SemiconductorComponentsIndustries,LLC,2010October,2010Rev.
P01PublicationOrderNumber:NB7VQ572M/DNB7VQ572M1.
8V/2.
5V/3.
3VDifferential4:1Muxw/InputEqualizerto1:2CMLClock/DataFanout/TranslatorMultiLevelInputsw/InternalTerminationDescriptionTheNB7VQ572Misahighperformancedifferential4:1Clock/Datainputmultiplexeranda1:2CMLClock/Datafanoutbufferthatoperatesupto7GHz/10Gbpsrespectivelywitha1.
8V,2.
5V,or3.
3Vpowersupply.
EachINx/INxinputpairincorporatesafixedEqualizerReceiver,whichwhenplacedinserieswithaDatapath,willenhancethedegradedsignaltransmittedacrossanFR4backplaneorcableinterconnect.
ForapplicationsthatdonotrequireEqualization,considertheNB7V572M,whichispincompatibletotheNB7VQ572M.
ThedifferentialClock/Datainputshaveinternal50WterminationresistorsandwillacceptdifferentialLVPECL,CML,orLVDSlogiclevels.
TheNB7VQ572MincorporatesapairofSelectpinsthatwillchooseoneoffourdifferentialinputsandwillproducetwoidenticalCMLoutputcopiesofClockorData.
Assuch,theNB7VQ572MisidealforSONET,GigE,FiberChannel,BackplaneandotherClock/Datadistributionapplications.
ThetwodifferentialCMLoutputswillswing400mVwhenexternallyloadedandterminatedwitha50WresistortoVCCandareoptimizedforlowskewandminimaljitter.
TheNB7VQ572Misofferedinalowprofile5x5mm32pinQFNPbFreepackage.
Applicationnotes,models,andsupportdocumentationareavailableatwww.
onsemi.
com.
TheNB7VQ572MisamemberoftheGigaCommfamilyofhighperformanceclockproducts.
FeaturesInputDataRate>10Gb/sTypicalDataDependentJitter6GHzTypicalRandomClockJitter2kV>200VRPUSELxInputPullupResistor28kWMoistureSensitivity(Note3)QFN32Level1FlammabilityRatingOxygenIndex:28to34UL94V0@0.
125inTransistorCount252MeetsorexceedsJEDECSpecEIA/JESD78ICLatchupTest3.
Foradditionalinformation,seeApplicationNoteAND8003/D.
Table4.
MAXIMUMRATINGSSymbolParameterCondition1Condition2RatingUnitVCCPositivePowerSupplyGND=0V4.
0VVINPositiveInputVoltageGND=0V0.
5toVCC+0.
5VVINPPDifferentialInputVoltage|ININ|1.
89VIoutOutputCurrentThroughRT(50WResistor)$40mAIINInputcurrentThroughRT(50WResistor)$40mAIVREFACVREFACSinkorSourceCurrent$1.
5mATAOperatingTemperatureRange40to+85°CTstgStorageTemperatureRange65to+150°CqJAThermalResistance(JunctiontoAmbient)(Note4)0lfpm500lfpmQFN32QFN323127°C/W°C/WqJCThermalResistance(JunctiontoCase)(Note4)QFN3212°C/WTsolWaveSolderv20sec265°CStressesexceedingMaximumRatingsmaydamagethedevice.
MaximumRatingsarestressratingsonly.
FunctionaloperationabovetheRecommendedOperatingConditionsisnotimplied.
ExtendedexposuretostressesabovetheRecommendedOperatingConditionsmayaffectdevicereliability.
4.
JEDECstandardmultilayerboard2S2P(2signal,2power)with8filledthermalviasunderexposedpad.
NB7VQ572Mhttp://onsemi.
com5Table5.
DCCHARACTERISTICSCMLOUTPUTVCC=1.
71Vto3.
6V,GND=0V,TA=40°Cto+85°C(Note5)SymbolCharacteristicMinTypMaxUnitPOWERSUPPLYVCCPowerSupplyVoltageVCC=3.
3VVCC=2.
5VVCC=1.
8V3.
02.
3751.
713.
32.
51.
83.
62.
6251.
89VICCPowerSupplyCurrentforVCC(InputsandOutputsOpen)VCC=3.
3VVCC=2.
5VVCC=1.
8V130120100160145120mACMLOUTPUTS(Note6)VOHOutputHIGHVoltageVCC=3.
3VVCC=2.
5VVCC=1.
8VVCC30327024701770VCC5329524951795VCC330025001800mVVOLOutputLOWVoltageVCC=3.
3VVCC=2.
5VVCC=1.
8VVCC55026751875VCC450282520251325VCC350297521751475mVVOLOutputLOWVoltageVCC=3.
3VVCC6252675VCC4752825VCC3252975mVVCC=2.
5VVCC6001900VCC–4752025VCC3502150VCC=1.
8VVCC5501250VCC–4501350VCC3501450DIFFERENTIALCLOCKINPUTSDRIVENSINGLEENDED(Figures7and8)(Note7)VIHSingleendedInputHIGHVoltageVth+100VCCmVVILSingleendedInputLOWVoltageGNDVth100mVVthInputThresholdReferenceVoltageRange(Note8)1100VCC100mVVISESingleendedInputVoltage(VIHVIL)2001200mVVREFACVREFACOutputReferenceVoltage(100mALoad)VCC=3.
3VVCC=2.
5VVCC=1.
8VVCC800VCC7501050VCC625VCC575VCC525VCC500VCC450VCC400mVDIFFERENTIALINPUTSDRIVENDIFFERENTIALLY(Figures9and10)(Note9)VIHDDifferentialInputHIGHVoltage(IN,IN)1200VCCmVVILDDifferentialInputLOWVoltage(IN,IN)0VIHD100mVVIDDifferentialInputVoltage(IN,IN)(VIHDVILD)1001200mVVCMRInputCommonModeRange(DifferentialConfiguration,Note10)(Figure11)1150VCC50mVIIHInputHIGHCurrentIN/IN(VTIN/VTINOpen)150150mAIILInputLOWCurrentIN/IN(VTIN/VTINOpen)150150mACONTROLINPUT(SELxPin)VIHInputHIGHVoltageforControlPinVCCx0.
65VCCVVILInputLOWVoltageforControlPinGNDVCCx0.
35VIIHInputHIGHCurrent150150mAIILInputLOWCurrent150150mATERMINATIONRESISTORSRTINInternalInputTerminationResistor(MeasuredfromINxtoVTx)455055WRTOUTInternalOutputTerminationResistor455055WNOTE:Devicewillmeetthespecificationsafterthermalequilibriumhasbeenestablishedwhenmountedinatestsocketorprintedcircuitboardwithmaintainedtransverseairflowgreaterthan500lfpm.
Electricalparametersareguaranteedonlyoverthedeclaredoperatingtemperaturerange.
Functionaloperationofthedeviceexceedingtheseconditionsisnotimplied.
Devicespecificationlimitvaluesareappliedindividuallyundernormaloperatingconditionsandnotvalidsimultaneously.
5.
InputandOutputparametersvary1:1withVCC.
6.
CMLoutputsloadedwith50WtoVCCforproperoperation.
7.
Vth,VIH,VIL,andVISEparametersmustbecompliedwithsimultaneously.
8.
Vthisappliedtothecomplementaryinputwhenoperatinginsingleendedmode.
9.
VIHD,VILD,VIDandVCMRparametersmustbecompliedwithsimultaneously.
10.
VCMRminvaries1:1withGND,VCMRmaxvaries1:1withVCC.
TheVCMRrangeisreferencedtothemostpositivesideofthedifferentialinputsignal.
NB7VQ572Mhttp://onsemi.
com6Table6.
ACCHARACTERISTICSVCC=1.
71Vto3.
6V,GND=0V,TA=40°Cto+85°C(Note11)SymbolCharacteristicMinTypMaxUnitfMAXMaximumInputClockFrequencyVOUTw200mV67GHzfDATAMAXMaximumOperatingDataRateNRZ,(PRBS23)1011GbpsfSELMaximumToggleFrequency,SELx410MHzVOUTPPOutputVoltageAmplitude(@VINPPmin)(Note12)(Figure12)fin≤5GHz250400mVtPLH,tPHLPropagationDelaytoDifferentialOutputsMeasuredatDifferentialCrosspoint@1GHzINx/INxtoQx/Qx@50MHzSELxtoQx100175725020psnstPDTempcoDifferentialPropagationDelayTemperatureCoefficient50Dfs/°CtskewOutputOutputskew(withindevice)(Note13)DeviceDeviceskew(tpdmaxtpdmin)03015100pstDCOutputClockDutyCycle(ReferenceDutyCycle=50%)fINv5GHz455055%FNPhaseNoise,fin=1GHz10kHz100kHz1MHz10MHz20MHz40MHz134136149149149149dBctFNIntegratedPhaseJitter(FigureTBD)fin=1GHz,12kHz20MHzOffset(RMS)35fstJITTERRandomClockJitter,RJ(Note14)fin≤6GHzDeterministicJitter,DJ(Note15)fin≤10Gbps(12"FR4)0.
20.
810psRMSpspkpkCrosstalkInducedJitter(AdjacentChannel)(Note17)0.
7psRMSVINPPInputVoltageSwing(DifferentialConfiguration)(Note16)1001200mVtr,,tfOutputRise/Falltimes@1GHz;(20%80%),VIN=400mVQx,Qx254565psNOTE:Devicewillmeetthespecificationsafterthermalequilibriumhasbeenestablishedwhenmountedinatestsocketorprintedcircuitboardwithmaintainedtransverseairflowgreaterthan500lfpm.
Electricalparametersareguaranteedonlyoverthedeclaredoperatingtemperaturerange.
Functionaloperationofthedeviceexceedingtheseconditionsisnotimplied.
Devicespecificationlimitvaluesareappliedindividuallyundernormaloperatingconditionsandnotvalidsimultaneously.
11.
Measuredusinga150mVpkpksource,50%dutycycleclocksource.
Alloutputloadingwithexternal50WtoVCC.
Inputedgerates40ps(20%80%).
12.
Outputvoltageswingisasingleendedmeasurementoperatingindifferentialmode.
13.
Skewismeasuredbetweenoutputsunderidenticaltransitionsandconditions.
Dutycycleskewisdefinedonlyfordifferentialoperationwhenthedelaysaremeasuredfromcrosspointoftheinputstothecrosspointoftheoutputs.
14.
AdditiveRMSjitterwith50%dutycycleclocksignal.
15.
AdditivePeaktoPeakdatadependentjitterwithinputNRZdataatPRBS23.
16.
Inputvoltageswingisasingleendedmeasurementoperatingindifferentialmode.
17.
Crosstalkismeasuredattheoutputwhileapplyingtwosimilarclockfrequenciesthatareasynchronouswithrespecttoeachotherattheinputs.
NB7VQ572Mhttp://onsemi.
com75500fin,CLOCKINPUTFREQUENCY(GHz)Figure3.
ClockOutputVoltageAmplitude(VOUTPP)vs.
InputFrequency(fin)atAmbientTemperature(Typical)8.
01.
02.
03.
04.
05.
06.
07.
0OUTPUTVOLTAGEAMPLITUDE(mV)QAMP(mV)Figure4.
InsideEyeHeightvs.
InputDataRate(Gbps)atAmbientTemperature(typical),FR4=12"fDATA,DATARATE(Gbps)60008.
01.
02.
03.
04.
05.
06.
07.
05004003002001000EYEHEIGHT(mV)5004504003503002509.
01011Figure5.
TypicalNB7VQ572MEqualizerApplicationandInterconnectwithPRBS23Patternat10GbpsQQINxFR412InchBackplaneDriverDJ1DJ2DJ3NB7VQ572MVTxINxNB7VQ572Mhttp://onsemi.
com8Figure6.
InputStructureFigure7.
DifferentialInputDrivenSingleEndedFigure8.
VthDiagramFigure9.
DifferentialInputsDrivenDifferentiallyFigure10.
DifferentialInputsDrivenDifferentiallyFigure11.
VCMRDiagramFigure12.
ACReferenceMeasurementVIHDVILDVID=|VIHD(IN)VILD(IN)|INININVthINININININQQtPLHtPHLVINPP=VIH(IN)VIL(IN)VOUTPP=VOH(Q)VOL(Q)50W50WINxVTxINxVCCVEEVthminVthmaxVthINVIHmaxVILmaxVIHVthVILVIHminVILminVCCVEEVCMminVCMmaxVCMRININVIHDmaxVILDmaxVID=VIHDVILDVIHDtypVILDtypVIHDminVILDminVthVIHVILFigure13.
SELxtoQxTimingDiagramtpdtpdVCC/2VCC/2SELxQxQxVCCNB7VQ572Mhttp://onsemi.
com9VCCLVPECLDriverIN50WZo=50WZo=50W50WINNB7VQ572MVCCVCCCMLDriverIN50WZo=50WZo=50W50WINVCCVT=VCCFigure14.
LVPECLInterfaceFigure15.
LVDSInterfaceVT=VCC2Figure16.
Standard50WLoadCMLInterfaceVCCLVDSDriverIN50WZo=50WZo=50W50WINVCCVT=OPENGNDGNDGNDGNDGNDGNDVCCDifferentialDriverIN50WZo=50WZo=50W50WINVCCVT=VREFAC*Figure17.
CapacitorCoupledDifferentialInterface(VTConnectedtoVREFAC)GNDGND*VREFACbypassedtogroundwitha0.
01mFcapacitor.
CLKxCLKxNB7VQ572MNB7VQ572MNB7VQ572MFigure18.
TypicalCMLOutputStructureandTerminationVCC50W50W16mA50W50WVCC(Receiver)GNDQQNB7VQ572MRECEIVERNB7VQ572Mhttp://onsemi.
com10DEVICEORDERINGINFORMATIONDevicePackageShippingNB7VQ572MMNGQFN32(Pbfree)74Units/RailNB7VQ572MMNR4GQFN32(Pbfree)1000/Tape&ReelForinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D.
GigaCommisatrademarkofSemiconductorComponentsIndustries,LLC(SCILLC).
QFN325x5,0.
5PCASE488AMISSUEADATE23OCT2013SCALE2:1SEATINGNOTE4K0.
15C(A3)AA1D2b191732XXXXXXXXXXXXXXXXAWLYYWWGG1GENERICMARKINGDIAGRAM*XXXXX=SpecificDeviceCodeA=AssemblyLocationWL=WaferLotYY=YearWW=WorkWeekG=PbFreePackageE232X8L32XBOTTOMVIEWTOPVIEWSIDEVIEWDABE0.
15CPINONELOCATION0.
10C0.
08CC25eNOTES:1.
DIMENSIONSANDTOLERANCINGPERASMEY14.
5M,1994.
2.
CONTROLLINGDIMENSION:MILLIMETERS.
3.
DIMENSIONbAPPLIESTOPLATEDTERMINALANDISMEASUREDBETWEEN0.
15AND0.
30MMFROMTHETERMINALTIP.
4.
COPLANARITYAPPLIESTOTHEEXPOSEDPADASWELLASTHETERMINALS.
321*Thisinformationisgeneric.
Pleaserefertodevicedatasheetforactualpartmark-ing.
PbFreeindicator,"G"ormicrodot"G",mayormaynotbepresent.
PLANE*ForadditionalinformationonourPbFreestrategyandsolderingdetails,pleasedownloadtheONSemiconductorSolderingandMountingTechniquesReferenceManual,SOLDERRM/D.
SOLDERINGFOOTPRINT*0.
503.
350.
303.
3532X0.
6332X5.
305.
30(Note:Microdotmaybeineitherloca-tion)L1DETAILALALTERNATETERMINALCONSTRUCTIONSLDETAILBMOLDCMPDEXPOSEDCuALTERNATECONSTRUCTIONDETAILBDETAILADIMAMINMILLIMETERS0.
80A1A30.
20REFb0.
18D5.
00BSCD22.
95E5.
00BSC2.
95E2e0.
50BSC0.
30LK0.
201.
000.
050.
303.
253.
250.
50MAXL10.
15e/2NOTE3PITCHDIMENSION:MILLIMETERSRECOMMENDEDAM0.
10BCM0.
05CMECHANICALCASEOUTLINEPACKAGEDIMENSIONSONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
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ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
98AON20032DDOCUMENTNUMBER:DESCRIPTION:ElectronicversionsareuncontrolledexceptwhenaccesseddirectlyfromtheDocumentRepository.
Printedversionsareuncontrolledexceptwhenstamped"CONTROLLEDCOPY"inred.
PAGE1OF1QFN325x50.
5PSemiconductorComponentsIndustries,LLC,2019www.
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comwww.
onsemi.
com1ONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
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ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
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ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
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