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PSMN008-75P/75BTrenchMOSstandardlevelFETRev.
03—08January2004Productdata1.
Productprole1.
1DescriptionSiliconMAXproductsusethelatestPhilipsTrenchMOStechnologytoachievethelowestpossibleon-stateresistanceineachpackage.
1.
2Features1.
3Applications1.
4Quickreferencedata2.
Pinninginformation[1]Itisnotpossibletomakeconnectiontopin2oftheSOT404package.
sFastswitchingsLowon-stateresistancesAvalancheruggednessratedsLowthermalresistance.
sDC-to-DCconverterssUninterruptablepowersuppliessVDS≤75VsID≤75AsPtot≤230WsRDSon≤8.
5mTable1:Pinning-SOT78andSOT404,simpliedoutlineandsymbolPinDescriptionSimpliedoutlineSymbol1gate(g)SOT78(TO-220AB)SOT404(D2-PAK)2drain(d)[1]3source(s)mbmountingbase;connectedtodrain(d)MBK10612mb3132MBK116mbsdgMBB076PhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
03—08January20042of13939775012545KoninklijkePhilipsElectronicsN.
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3.
Orderinginformation4.
LimitingvaluesTable2:OrderinginformationTypenumberPackageNameDescriptionVersionPSMN008-75PTO-220ABPlasticsingle-endedpackage;heatsinkmounted;1mountinghole;3leadsSOT78PSMN008-75BD2-PAKPlasticsingle-endedsurfacemountedpackage;3leads(1leadcropped)SOT404Table3:LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
SymbolParameterConditionsMinMaxUnitVDSdrain-sourcevoltage(DC)25°C≤Tj≤175°C-75VVDGRdrain-gatevoltage(DC)25°C≤Tj≤175°C;RGS=20k-75VVGSgate-sourcevoltage(DC)-±20VIDdraincurrent(DC)Tmb=25°C;VGS=10V;Figure2and3-75ATmb=100°C;VGS=10V;Figure2-75AIDMpeakdraincurrentTmb=25°C;pulsed;tp≤10s;Figure2and3-240APtottotalpowerdissipationTmb=25°C;Figure1-230WTstgstoragetemperature55+175°CTjjunctiontemperature55+175°CSource-draindiodeISsource(diodeforward)current(DC)Tmb=25°C-75AISMpeaksource(diodeforward)currentTmb=25°C;pulsed;tp≤10s-240AAvalancheruggednessEDS(AL)Snon-repetitivedrain-sourceavalancheenergyunclampedinductiveload;ID=63A;tp=0.
129ms;VDD≤15V;RGS=50;VGS=10V;startingTj=25°C;-395mJPhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
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VGS≥10VFig1.
Normalizedtotalpowerdissipationasafunctionofmountingbasetemperature.
Fig2.
Normalizedcontinuousdraincurrentasafunctionofmountingbasetemperature.
Tmb=25°C;IDMissinglepulseFig3.
Safeoperatingarea;continuousandpeakdraincurrentsasafunctionofdrain-sourcevoltage.
03aa1604080120050100150200Tmb(°C)Pder(%)03am8604080120050100150200Tmb(°C)Ider(%)PderPtotPtot25C°()-100%*=IderIDID25C°()100%*=03am79110102103110102103VDS(V)ID(A)DC100s10msLimitRDSon=VDS/ID1mstp=10sPhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
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5.
Thermalcharacteristics5.
1TransientthermalimpedanceTable4:ThermalcharacteristicsSymbolParameterConditionsMinTypMaxUnitRth(j-mb)thermalresistancefromjunctiontomountingbaseFigure4--0.
65K/WRth(j-a)thermalresistancefromjunctiontoambientSOT78verticalinstillair-60-K/WSOT404mountedonaprinted-circuitboard;minimumfootprint.
-50-K/WFig4.
Transientthermalimpedancefromjunctiontomountingbaseasafunctionofpulseduration.
03am7810-210-1110-410-310-210-11tp(s)Zth(j-mb)(K/W)singlepulseδ=0.
50.
20.
10.
050.
02tptpTPtTδ=PhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
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6.
CharacteristicsTable5:CharacteristicsTj=25°Cunlessotherwisespecied.
SymbolParameterConditionsMinTypMaxUnitStaticcharacteristicsV(BR)DSSdrain-sourcebreakdownvoltageID=250A;VGS=0V7590-VVGS(th)gate-sourcethresholdvoltageID=1mA;VDS=VGS;Figure9Tj=25°C234VTj=175°C1--VTj=55°C--4.
4VIDSSdrain-sourceleakagecurrentVGS=0V;VDS=75VTj=25°C-0.
0510ATj=175°C--500AIGSSgate-sourceleakagecurrentVDS=0V;VGS=±20V-4100nARDSondrain-sourceon-stateresistanceVGS=10V;ID=25A;Figure7and8Tj=25oC-6.
58.
5mTj=175°C--20mDynamiccharacteristicsQg(tot)totalgatechargeID=75A;VDS=60V;VGS=10V;Figure13-122.
8-nCQgsgate-sourcecharge-21-nCQgdgate-drain(Miller)charge-50-nCCissinputcapacitanceVGS=0V;VDS=25V;f=1MHz;Figure11-5260-pFCossoutputcapacitance-525-pFCrssreversetransfercapacitance-420-pFtd(on)turn-ondelaytimeVDD=37.
5V;RD=1.
5;VGS=10V;RG=10-18-nstrrisetime-55-nstd(off)turn-offdelaytime-88-nstffalltime-80-nsSource-draindiodeVSDsource-drain(diodeforward)voltageIS=25A;VGS=0V;Figure12-0.
841.
2VtrrreverserecoverytimeIS=5A;dIS/dt=100A/s;VGS=0V;VR=30V-70-nsQrrecoveredcharge-100-nCPhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
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Tj=25°CTj=25°Cand175°C;VDS>ID*RDSonFig5.
Outputcharacteristics:draincurrentasafunctionofdrain-sourcevoltage;typicalvalues.
Fig6.
Transfercharacteristics:draincurrentasafunctionofgate-sourcevoltage;typicalvalues.
Tj=25°CFig7.
Drain-sourceon-stateresistanceasafunctionofdraincurrent;typicalvalues.
Fig8.
Normalizeddrain-sourceon-stateresistancefactorasafunctionofjunctiontemperature.
03am80025507510000.
511.
52VDS(V)ID(A)Tj=25°CVGS=4.
1V10V4.
5V5V5.
5V6V4.
7V03am8202550751000246VGS(V)ID(A)VDS>IDxRDSonTj=25°C175°C03am8105101520250255075100ID(A)RDSon(m)VGS=5VTj=25°C10V5.
5V03ac630123-60060120180Tj(°C)aaRDSonRDSon25C°()-=PhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
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ID=1mA;VDS=VGSTj=25°C;VDS=5VFig9.
Gate-sourcethresholdvoltageasafunctionofjunctiontemperature.
Fig10.
Sub-thresholddraincurrentasafunctionofgate-sourcevoltage.
VGS=0V;f=1MHzFig11.
Input,outputandreversetransfercapacitancesasafunctionofdrain-sourcevoltage;typicalvalues.
03aa32012345-60060120180Tj(°C)VGS(th)(V)maxmintyp03aa3510-610-510-410-310-210-10246VGS(V)ID(A)maxtypmin03am8410210310410-1110102VDS(V)C(pF)CissCossCrssPhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
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Tj=25°Cand175°C;VGS=0VID=75A;VDD=60VFig12.
Source(diodeforward)currentasafunctionofsource-drain(diodeforward)voltage;typicalvalues.
Fig13.
Gate-sourcevoltageasafunctionofgatecharge;typicalvalues.
03am83025507510000.
511.
5VSD(V)IS(A)Tj=25°C175°CVGS=0V03am850246810050100150QG(nC)VGS(V)ID=75ATj=25°CVDD=60VPhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
03—08January20049of13939775012545KoninklijkePhilipsElectronicsN.
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7.
PackageoutlineFig14.
SOT78(TO-220AB).
REFERENCESOUTLINEVERSIONEUROPEANPROJECTIONISSUEDATEIECJEDECEIAJSOT78SC-463-leadTO-220ABDD1qpL123L1(1)b1eeb0510mmscalePlasticsingle-endedpackage;heatsinkmounted;1mountinghole;3-leadTO-220ABSOT78DIMENSIONS(mmaretheoriginaldimensions)AEA1cNote1.
Terminalsinthiszonearenottinned.
QL2UNITA1b1D1epmm2.
54qQAbDcL2max.
3.
03.
83.
615.
013.
53.
302.
793.
02.
72.
62.
20.
70.
415.
815.
20.
90.
71.
31.
04.
54.
11.
391.
276.
45.
910.
39.
7L1(1)EL00-09-0701-02-16mountingbasePhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
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Fig15.
SOT404(D2-PAK).
UNITAREFERENCESOUTLINEVERSIONEUROPEANPROJECTIONISSUEDATEIECJEDECEIAJmmA1D1Dmax.
EeLpHDQc2.
542.
602.
2015.
8014.
802.
902.
10111.
601.
2010.
309.
704.
504.
101.
401.
270.
850.
600.
640.
46bDIMENSIONS(mmaretheoriginaldimensions)SOT40402.
55mmscalePlasticsingle-endedsurfacemountedpackage(PhilipsversionofD2-PAK);3leads(oneleadcropped)SOT404eeEbD1HDDQLpcA1A132mountingbase99-06-2501-02-12PhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
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8.
RevisionhistoryTable6:RevisionhistoryRevDateCPCNDescription0320040108HZG469Productdata(030775012545)Modication:UpdatedtolateststandardsSection1.
4"Quickreferencedata"andSection6"Characteristics"typicalRDSonmodied.
Section4"Limitingvalues"EASchangedtoEDS(AL)S.
Section4"Limitingvalues"Figure3modied.
Section4"Limitingvalues"EDS(AL)Sconditionsandlimitmodied.
Section5"Thermalcharacteristics"Figure4modied.
Section6"Characteristics"typicalvaluesQg(tot),Ciss,Coss,Crsstr,tdoff,tf,trrandQrmodied.
Section6"Characteristics"Figure5,6,7,8,11,12,13modied.
0220030711Productdata(939775011416)Modications:Updatedtolateststandards.
Section1.
4"Quickreferencedata"typicalvaluemodiedtoreectimprovedperformance.
Section4"Limitingvalues"typographicalerrorTambchangedtoTmb.
Section4"Limitingvalues"EASchangedtoEDS(AL)S.
Section4"Limitingvalues"IASremoved.
Section4"Limitingvalues"Figure3modiedtoreectdeviceperformance.
Section4"Limitingvalues"non-repetitivedrain-sourceavalancheruggednesscurrentasafunctionofpulsedurationremoved.
Section5"Thermalcharacteristics"Figure4modiedtoreectdeviceperformance.
Section6"Characteristics"typvaluesmodiedtoreectperformance.
Section6"Characteristics"Figure5,6,7,11,12and13modiedtoreectdeviceperformance.
Section6"Characteristics"forwardtransconductanceasafunctionofdraincurrent;typicalvaluesremoved.
0120000918-Productdata(939775007495).
939775012545PhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETKoninklijkePhilipsElectronicsN.
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2004.
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ProductdataRev.
03—08January200412of13939775012545PhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETKoninklijkePhilipsElectronicsN.
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2004.
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ProductdataRev.
03—08January200412of13ContactinformationForadditionalinformation,pleasevisithttp://www.
semiconductors.
philips.
com.
Forsalesofceaddresses,sende-mailto:sales.
addresses@www.
semiconductors.
philips.
com.
Fax:+314027248259.
Datasheetstatus[1]Pleaseconsultthemostrecentlyissueddatasheetbeforeinitiatingorcompletingadesign.
[2]Theproductstatusofthedevice(s)describedinthisdatasheetmayhavechangedsincethisdatasheetwaspublished.
ThelatestinformationisavailableontheInternetatURLhttp://www.
semiconductors.
philips.
com.
[3]Fordatasheetsdescribingmultipletypenumbers,thehighest-levelproductstatusdeterminesthedatasheetstatus.
10.
DenitionsShort-formspecication—Thedatainashort-formspecicationisextractedfromafulldatasheetwiththesametypenumberandtitle.
Fordetailedinformationseetherelevantdatasheetordatahandbook.
Limitingvaluesdenition—LimitingvaluesgivenareinaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
Stressaboveoneormoreofthelimitingvaluesmaycausepermanentdamagetothedevice.
ThesearestressratingsonlyandoperationofthedeviceattheseoratanyotherconditionsabovethosegivenintheCharacteristicssectionsofthespecicationisnotimplied.
Exposuretolimitingvaluesforextendedperiodsmayaffectdevicereliability.
Applicationinformation—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.
PhilipsSemiconductorsmakenorepresentationorwarrantythatsuchapplicationswillbesuitableforthespeciedusewithoutfurthertestingormodication.
11.
DisclaimersLifesupport—Theseproductsarenotdesignedforuseinlifesupportappliances,devices,orsystemswheremalfunctionoftheseproductscanreasonablybeexpectedtoresultinpersonalinjury.
PhilipsSemiconductorscustomersusingorsellingtheseproductsforuseinsuchapplicationsdosoattheirownriskandagreetofullyindemnifyPhilipsSemiconductorsforanydamagesresultingfromsuchapplication.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechangesintheproducts-includingcircuits,standardcells,and/orsoftware-describedorcontainedhereininordertoimprovedesignand/orperformance.
Whentheproductisinfullproduction(status'Production'),relevantchangeswillbecommunicatedviaaCustomerProduct/ProcessChangeNotication(CPCN).
PhilipsSemiconductorsassumesnoresponsibilityorliabilityfortheuseofanyoftheseproducts,conveysnolicenceortitleunderanypatent,copyright,ormaskworkrighttotheseproducts,andmakesnorepresentationsorwarrantiesthattheseproductsarefreefrompatent,copyright,ormaskworkrightinfringement,unlessotherwisespecied.
12.
TrademarksTrenchMOS—isatrademarkofKoninklijkePhilipsElectronicsN.
V.
SiliconMAX—isatrademarkofKoninklijkePhilipsElectronicsN.
V.
LevelDatasheetstatus[1]Productstatus[2][3]DenitionIObjectivedataDevelopmentThisdatasheetcontainsdatafromtheobjectivespecicationforproductdevelopment.
PhilipsSemiconductorsreservestherighttochangethespecicationinanymannerwithoutnotice.
IIPreliminarydataQualicationThisdatasheetcontainsdatafromthepreliminaryspecication.
Supplementarydatawillbepublishedatalaterdate.
PhilipsSemiconductorsreservestherighttochangethespecicationwithoutnotice,inordertoimprovethedesignandsupplythebestpossibleproduct.
IIIProductdataProductionThisdatasheetcontainsdatafromtheproductspecication.
PhilipsSemiconductorsreservestherighttomakechangesatanytimeinordertoimprovethedesign,manufacturingandsupply.
RelevantchangeswillbecommunicatedviaaCustomerProduct/ProcessChangeNotication(CPCN).
KoninklijkePhilipsElectronicsN.
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2004.
PrintedinTheNetherlandsAllrightsarereserved.
Reproductioninwholeorinpartisprohibitedwithoutthepriorwrittenconsentofthecopyrightowner.
Theinformationpresentedinthisdocumentdoesnotformpartofanyquotationorcontract,isbelievedtobeaccurateandreliableandmaybechangedwithoutnotice.
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Publicationthereofdoesnotconveynorimplyanylicenseunderpatent-orotherindustrialorintellectualpropertyrights.
Dateofrelease:08January2004Documentordernumber:939775012545ContentsPhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFET1Productprole11.
1Description11.
2Features11.
3Applications11.
4Quickreferencedata.
12Pinninginformation.
13Orderinginformation24Limitingvalues.
25Thermalcharacteristics.
45.
1Transientthermalimpedance46Characteristics.
57Packageoutline98Revisionhistory.
119Datasheetstatus1210Denitions1211Disclaimers.
1212Trademarks.
12
03—08January2004Productdata1.
Productprole1.
1DescriptionSiliconMAXproductsusethelatestPhilipsTrenchMOStechnologytoachievethelowestpossibleon-stateresistanceineachpackage.
1.
2Features1.
3Applications1.
4Quickreferencedata2.
Pinninginformation[1]Itisnotpossibletomakeconnectiontopin2oftheSOT404package.
sFastswitchingsLowon-stateresistancesAvalancheruggednessratedsLowthermalresistance.
sDC-to-DCconverterssUninterruptablepowersuppliessVDS≤75VsID≤75AsPtot≤230WsRDSon≤8.
5mTable1:Pinning-SOT78andSOT404,simpliedoutlineandsymbolPinDescriptionSimpliedoutlineSymbol1gate(g)SOT78(TO-220AB)SOT404(D2-PAK)2drain(d)[1]3source(s)mbmountingbase;connectedtodrain(d)MBK10612mb3132MBK116mbsdgMBB076PhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
03—08January20042of13939775012545KoninklijkePhilipsElectronicsN.
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2004.
Allrightsreserved.
3.
Orderinginformation4.
LimitingvaluesTable2:OrderinginformationTypenumberPackageNameDescriptionVersionPSMN008-75PTO-220ABPlasticsingle-endedpackage;heatsinkmounted;1mountinghole;3leadsSOT78PSMN008-75BD2-PAKPlasticsingle-endedsurfacemountedpackage;3leads(1leadcropped)SOT404Table3:LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
SymbolParameterConditionsMinMaxUnitVDSdrain-sourcevoltage(DC)25°C≤Tj≤175°C-75VVDGRdrain-gatevoltage(DC)25°C≤Tj≤175°C;RGS=20k-75VVGSgate-sourcevoltage(DC)-±20VIDdraincurrent(DC)Tmb=25°C;VGS=10V;Figure2and3-75ATmb=100°C;VGS=10V;Figure2-75AIDMpeakdraincurrentTmb=25°C;pulsed;tp≤10s;Figure2and3-240APtottotalpowerdissipationTmb=25°C;Figure1-230WTstgstoragetemperature55+175°CTjjunctiontemperature55+175°CSource-draindiodeISsource(diodeforward)current(DC)Tmb=25°C-75AISMpeaksource(diodeforward)currentTmb=25°C;pulsed;tp≤10s-240AAvalancheruggednessEDS(AL)Snon-repetitivedrain-sourceavalancheenergyunclampedinductiveload;ID=63A;tp=0.
129ms;VDD≤15V;RGS=50;VGS=10V;startingTj=25°C;-395mJPhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
03—08January20043of13939775012545KoninklijkePhilipsElectronicsN.
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Allrightsreserved.
VGS≥10VFig1.
Normalizedtotalpowerdissipationasafunctionofmountingbasetemperature.
Fig2.
Normalizedcontinuousdraincurrentasafunctionofmountingbasetemperature.
Tmb=25°C;IDMissinglepulseFig3.
Safeoperatingarea;continuousandpeakdraincurrentsasafunctionofdrain-sourcevoltage.
03aa1604080120050100150200Tmb(°C)Pder(%)03am8604080120050100150200Tmb(°C)Ider(%)PderPtotPtot25C°()-100%*=IderIDID25C°()100%*=03am79110102103110102103VDS(V)ID(A)DC100s10msLimitRDSon=VDS/ID1mstp=10sPhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
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5.
Thermalcharacteristics5.
1TransientthermalimpedanceTable4:ThermalcharacteristicsSymbolParameterConditionsMinTypMaxUnitRth(j-mb)thermalresistancefromjunctiontomountingbaseFigure4--0.
65K/WRth(j-a)thermalresistancefromjunctiontoambientSOT78verticalinstillair-60-K/WSOT404mountedonaprinted-circuitboard;minimumfootprint.
-50-K/WFig4.
Transientthermalimpedancefromjunctiontomountingbaseasafunctionofpulseduration.
03am7810-210-1110-410-310-210-11tp(s)Zth(j-mb)(K/W)singlepulseδ=0.
50.
20.
10.
050.
02tptpTPtTδ=PhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
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6.
CharacteristicsTable5:CharacteristicsTj=25°Cunlessotherwisespecied.
SymbolParameterConditionsMinTypMaxUnitStaticcharacteristicsV(BR)DSSdrain-sourcebreakdownvoltageID=250A;VGS=0V7590-VVGS(th)gate-sourcethresholdvoltageID=1mA;VDS=VGS;Figure9Tj=25°C234VTj=175°C1--VTj=55°C--4.
4VIDSSdrain-sourceleakagecurrentVGS=0V;VDS=75VTj=25°C-0.
0510ATj=175°C--500AIGSSgate-sourceleakagecurrentVDS=0V;VGS=±20V-4100nARDSondrain-sourceon-stateresistanceVGS=10V;ID=25A;Figure7and8Tj=25oC-6.
58.
5mTj=175°C--20mDynamiccharacteristicsQg(tot)totalgatechargeID=75A;VDS=60V;VGS=10V;Figure13-122.
8-nCQgsgate-sourcecharge-21-nCQgdgate-drain(Miller)charge-50-nCCissinputcapacitanceVGS=0V;VDS=25V;f=1MHz;Figure11-5260-pFCossoutputcapacitance-525-pFCrssreversetransfercapacitance-420-pFtd(on)turn-ondelaytimeVDD=37.
5V;RD=1.
5;VGS=10V;RG=10-18-nstrrisetime-55-nstd(off)turn-offdelaytime-88-nstffalltime-80-nsSource-draindiodeVSDsource-drain(diodeforward)voltageIS=25A;VGS=0V;Figure12-0.
841.
2VtrrreverserecoverytimeIS=5A;dIS/dt=100A/s;VGS=0V;VR=30V-70-nsQrrecoveredcharge-100-nCPhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
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Tj=25°CTj=25°Cand175°C;VDS>ID*RDSonFig5.
Outputcharacteristics:draincurrentasafunctionofdrain-sourcevoltage;typicalvalues.
Fig6.
Transfercharacteristics:draincurrentasafunctionofgate-sourcevoltage;typicalvalues.
Tj=25°CFig7.
Drain-sourceon-stateresistanceasafunctionofdraincurrent;typicalvalues.
Fig8.
Normalizeddrain-sourceon-stateresistancefactorasafunctionofjunctiontemperature.
03am80025507510000.
511.
52VDS(V)ID(A)Tj=25°CVGS=4.
1V10V4.
5V5V5.
5V6V4.
7V03am8202550751000246VGS(V)ID(A)VDS>IDxRDSonTj=25°C175°C03am8105101520250255075100ID(A)RDSon(m)VGS=5VTj=25°C10V5.
5V03ac630123-60060120180Tj(°C)aaRDSonRDSon25C°()-=PhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
03—08January20047of13939775012545KoninklijkePhilipsElectronicsN.
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ID=1mA;VDS=VGSTj=25°C;VDS=5VFig9.
Gate-sourcethresholdvoltageasafunctionofjunctiontemperature.
Fig10.
Sub-thresholddraincurrentasafunctionofgate-sourcevoltage.
VGS=0V;f=1MHzFig11.
Input,outputandreversetransfercapacitancesasafunctionofdrain-sourcevoltage;typicalvalues.
03aa32012345-60060120180Tj(°C)VGS(th)(V)maxmintyp03aa3510-610-510-410-310-210-10246VGS(V)ID(A)maxtypmin03am8410210310410-1110102VDS(V)C(pF)CissCossCrssPhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
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Tj=25°Cand175°C;VGS=0VID=75A;VDD=60VFig12.
Source(diodeforward)currentasafunctionofsource-drain(diodeforward)voltage;typicalvalues.
Fig13.
Gate-sourcevoltageasafunctionofgatecharge;typicalvalues.
03am83025507510000.
511.
5VSD(V)IS(A)Tj=25°C175°CVGS=0V03am850246810050100150QG(nC)VGS(V)ID=75ATj=25°CVDD=60VPhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
03—08January20049of13939775012545KoninklijkePhilipsElectronicsN.
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2004.
Allrightsreserved.
7.
PackageoutlineFig14.
SOT78(TO-220AB).
REFERENCESOUTLINEVERSIONEUROPEANPROJECTIONISSUEDATEIECJEDECEIAJSOT78SC-463-leadTO-220ABDD1qpL123L1(1)b1eeb0510mmscalePlasticsingle-endedpackage;heatsinkmounted;1mountinghole;3-leadTO-220ABSOT78DIMENSIONS(mmaretheoriginaldimensions)AEA1cNote1.
Terminalsinthiszonearenottinned.
QL2UNITA1b1D1epmm2.
54qQAbDcL2max.
3.
03.
83.
615.
013.
53.
302.
793.
02.
72.
62.
20.
70.
415.
815.
20.
90.
71.
31.
04.
54.
11.
391.
276.
45.
910.
39.
7L1(1)EL00-09-0701-02-16mountingbasePhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
03—08January200410of13939775012545KoninklijkePhilipsElectronicsN.
V.
2004.
Allrightsreserved.
Fig15.
SOT404(D2-PAK).
UNITAREFERENCESOUTLINEVERSIONEUROPEANPROJECTIONISSUEDATEIECJEDECEIAJmmA1D1Dmax.
EeLpHDQc2.
542.
602.
2015.
8014.
802.
902.
10111.
601.
2010.
309.
704.
504.
101.
401.
270.
850.
600.
640.
46bDIMENSIONS(mmaretheoriginaldimensions)SOT40402.
55mmscalePlasticsingle-endedsurfacemountedpackage(PhilipsversionofD2-PAK);3leads(oneleadcropped)SOT404eeEbD1HDDQLpcA1A132mountingbase99-06-2501-02-12PhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETProductdataRev.
03—08January200411of13939775012545KoninklijkePhilipsElectronicsN.
V.
2004.
Allrightsreserved.
8.
RevisionhistoryTable6:RevisionhistoryRevDateCPCNDescription0320040108HZG469Productdata(030775012545)Modication:UpdatedtolateststandardsSection1.
4"Quickreferencedata"andSection6"Characteristics"typicalRDSonmodied.
Section4"Limitingvalues"EASchangedtoEDS(AL)S.
Section4"Limitingvalues"Figure3modied.
Section4"Limitingvalues"EDS(AL)Sconditionsandlimitmodied.
Section5"Thermalcharacteristics"Figure4modied.
Section6"Characteristics"typicalvaluesQg(tot),Ciss,Coss,Crsstr,tdoff,tf,trrandQrmodied.
Section6"Characteristics"Figure5,6,7,8,11,12,13modied.
0220030711Productdata(939775011416)Modications:Updatedtolateststandards.
Section1.
4"Quickreferencedata"typicalvaluemodiedtoreectimprovedperformance.
Section4"Limitingvalues"typographicalerrorTambchangedtoTmb.
Section4"Limitingvalues"EASchangedtoEDS(AL)S.
Section4"Limitingvalues"IASremoved.
Section4"Limitingvalues"Figure3modiedtoreectdeviceperformance.
Section4"Limitingvalues"non-repetitivedrain-sourceavalancheruggednesscurrentasafunctionofpulsedurationremoved.
Section5"Thermalcharacteristics"Figure4modiedtoreectdeviceperformance.
Section6"Characteristics"typvaluesmodiedtoreectperformance.
Section6"Characteristics"Figure5,6,7,11,12and13modiedtoreectdeviceperformance.
Section6"Characteristics"forwardtransconductanceasafunctionofdraincurrent;typicalvaluesremoved.
0120000918-Productdata(939775007495).
939775012545PhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETKoninklijkePhilipsElectronicsN.
V.
2004.
Allrightsreserved.
ProductdataRev.
03—08January200412of13939775012545PhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFETKoninklijkePhilipsElectronicsN.
V.
2004.
Allrightsreserved.
ProductdataRev.
03—08January200412of13ContactinformationForadditionalinformation,pleasevisithttp://www.
semiconductors.
philips.
com.
Forsalesofceaddresses,sende-mailto:sales.
addresses@www.
semiconductors.
philips.
com.
Fax:+314027248259.
Datasheetstatus[1]Pleaseconsultthemostrecentlyissueddatasheetbeforeinitiatingorcompletingadesign.
[2]Theproductstatusofthedevice(s)describedinthisdatasheetmayhavechangedsincethisdatasheetwaspublished.
ThelatestinformationisavailableontheInternetatURLhttp://www.
semiconductors.
philips.
com.
[3]Fordatasheetsdescribingmultipletypenumbers,thehighest-levelproductstatusdeterminesthedatasheetstatus.
10.
DenitionsShort-formspecication—Thedatainashort-formspecicationisextractedfromafulldatasheetwiththesametypenumberandtitle.
Fordetailedinformationseetherelevantdatasheetordatahandbook.
Limitingvaluesdenition—LimitingvaluesgivenareinaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
Stressaboveoneormoreofthelimitingvaluesmaycausepermanentdamagetothedevice.
ThesearestressratingsonlyandoperationofthedeviceattheseoratanyotherconditionsabovethosegivenintheCharacteristicssectionsofthespecicationisnotimplied.
Exposuretolimitingvaluesforextendedperiodsmayaffectdevicereliability.
Applicationinformation—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.
PhilipsSemiconductorsmakenorepresentationorwarrantythatsuchapplicationswillbesuitableforthespeciedusewithoutfurthertestingormodication.
11.
DisclaimersLifesupport—Theseproductsarenotdesignedforuseinlifesupportappliances,devices,orsystemswheremalfunctionoftheseproductscanreasonablybeexpectedtoresultinpersonalinjury.
PhilipsSemiconductorscustomersusingorsellingtheseproductsforuseinsuchapplicationsdosoattheirownriskandagreetofullyindemnifyPhilipsSemiconductorsforanydamagesresultingfromsuchapplication.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechangesintheproducts-includingcircuits,standardcells,and/orsoftware-describedorcontainedhereininordertoimprovedesignand/orperformance.
Whentheproductisinfullproduction(status'Production'),relevantchangeswillbecommunicatedviaaCustomerProduct/ProcessChangeNotication(CPCN).
PhilipsSemiconductorsassumesnoresponsibilityorliabilityfortheuseofanyoftheseproducts,conveysnolicenceortitleunderanypatent,copyright,ormaskworkrighttotheseproducts,andmakesnorepresentationsorwarrantiesthattheseproductsarefreefrompatent,copyright,ormaskworkrightinfringement,unlessotherwisespecied.
12.
TrademarksTrenchMOS—isatrademarkofKoninklijkePhilipsElectronicsN.
V.
SiliconMAX—isatrademarkofKoninklijkePhilipsElectronicsN.
V.
LevelDatasheetstatus[1]Productstatus[2][3]DenitionIObjectivedataDevelopmentThisdatasheetcontainsdatafromtheobjectivespecicationforproductdevelopment.
PhilipsSemiconductorsreservestherighttochangethespecicationinanymannerwithoutnotice.
IIPreliminarydataQualicationThisdatasheetcontainsdatafromthepreliminaryspecication.
Supplementarydatawillbepublishedatalaterdate.
PhilipsSemiconductorsreservestherighttochangethespecicationwithoutnotice,inordertoimprovethedesignandsupplythebestpossibleproduct.
IIIProductdataProductionThisdatasheetcontainsdatafromtheproductspecication.
PhilipsSemiconductorsreservestherighttomakechangesatanytimeinordertoimprovethedesign,manufacturingandsupply.
RelevantchangeswillbecommunicatedviaaCustomerProduct/ProcessChangeNotication(CPCN).
KoninklijkePhilipsElectronicsN.
V.
2004.
PrintedinTheNetherlandsAllrightsarereserved.
Reproductioninwholeorinpartisprohibitedwithoutthepriorwrittenconsentofthecopyrightowner.
Theinformationpresentedinthisdocumentdoesnotformpartofanyquotationorcontract,isbelievedtobeaccurateandreliableandmaybechangedwithoutnotice.
Noliabilitywillbeacceptedbythepublisherforanyconsequenceofitsuse.
Publicationthereofdoesnotconveynorimplyanylicenseunderpatent-orotherindustrialorintellectualpropertyrights.
Dateofrelease:08January2004Documentordernumber:939775012545ContentsPhilipsSemiconductorsPSMN008-75P/75BTrenchMOSstandardlevelFET1Productprole11.
1Description11.
2Features11.
3Applications11.
4Quickreferencedata.
12Pinninginformation.
13Orderinginformation24Limitingvalues.
25Thermalcharacteristics.
45.
1Transientthermalimpedance46Characteristics.
57Packageoutline98Revisionhistory.
119Datasheetstatus1210Denitions1211Disclaimers.
1212Trademarks.
12
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