4.k12818.com

123TO-220TABD(2,TAB)G(1)S(3)AM01475V1FeaturesOrdercodeVDSRDS(on)max.
IDSTP22N60M6600V230mΩ15AReducedswitchinglossesLowerRDS(on)perareavspreviousgenerationLowgateinputresistance100%avalanchetestedZener-protectedApplicationsSwitchingapplicationsLLCconvertersBoostPFCconvertersDescriptionThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothewell-knownandconsolidatedMDmeshfamilyofSJMOSFETs.
STMicroelectronicsbuildsonthepreviousgenerationofMDmeshdevicesthroughitsnewM6technology,whichcombinesexcellentRDS(on)perareaimprovementwithoneofthemosteffectiveswitchingbehaviorsavailable,aswellasauser-friendlyexperienceformaximumend-applicationefficiency.
ProductstatuslinkSTP22N60M6ProductsummaryOrdercodeSTP22N60M6Marking22N60M6PackageTO-220PackingTubeN-channel600V,196mΩtyp.
,15A,MDmeshM6PowerMOSFETinaTO-220packageSTP22N60M6DatasheetDS12818-Rev1-November2018ForfurtherinformationcontactyourlocalSTMicroelectronicssalesoffice.
www.
st.
com1ElectricalratingsTable1.
AbsolutemaximumratingsSymbolParameterValueUnitVGSGate-sourcevoltage±25VIDDraincurrent(continuous)atTcase=25°C15ADraincurrent(continuous)atTcase=100°C9.
5IDM(1)Draincurrent(pulsed)42APTOTTotalpowerdissipationatTcase=25°C130Wdv/dt(2)Peakdioderecoveryvoltageslope15V/nsdv/dt(3)MOSFETdv/dtruggedness100TstgStoragetemperaturerange-55to150°CTjOperatingjunctiontemperaturerange1.
Pulsewidthislimitedbysafeoperatingarea.
2.
ISD≤15A,di/dt=400A/μs,VDSVDS≤480VTable2.
ThermaldataSymbolParameterValueUnitRthj-caseThermalresistancejunction-case0.
96°C/WRthj-ambThermalresistancejunction-ambient62.
5°C/WTable3.
AvalanchecharacteristicsSymbolParameterValueUnitIARAvalanchecurrent,repetitiveornon-repetitive(pulsewidthlimitedbyTJmax)2.
9AEASSinglepulseavalancheenergy(startingTj=25°C,ID=IAR,VDD=50V)230mJSTP22N60M6ElectricalratingsDS12818-Rev1page2/132Electricalcharacteristics(Tcase=25°Cunlessotherwisespecified).
Table4.
On/offstatesSymbolParameterTestconditionsMin.
Typ.
Max.
UnitV(BR)DSSDrain-sourcebreakdownvoltageVGS=0V,ID=1mA600VIDSSZerogatevoltagedraincurrentVGS=0V,VDS=600V1AVGS=0V,VDS=600V,Tcase=125°C(1)100IGSSGate-bodyleakagecurrentVDS=0V,VGS=±25V±5AVGS(th)GatethresholdvoltageVDS=VGS,ID=250A3.
2544.
75VRDS(on)Staticdrain-sourceon-resistanceID=7.
5A,VGS=10V196230mΩ1.
Definedbydesign,notsubjecttoproductiontest.
Table5.
DynamicSymbolParameterTestconditionsMin.
Typ.
Max.
UnitCissInputcapacitanceVDS=100V,f=1MHz,VGS=0V-800-pFCossOutputcapacitance-52.
6-CrssReversetransfercapacitance-4.
3-Cosseq.
(1)EquivalentoutputcapacitanceVDS=0to480V,VGS=0V-181-pFRGIntrinsicgateresistancef=1MHz,ID=0A-4.
7-ΩQgTotalgatechargeVDD=480V,ID=15A,VGS=0to10V(seeFigure14.
Testcircuitforgatechargebehavior)-20-nCQgsGate-sourcecharge-5.
6-QgdGate-draincharge-9.
5-1.
Cosseq.
isdefinedasaconstantequivalentcapacitancegivingthesamechargingtimeasCosswhenVDSincreasesfrom0to80%VDSS.
Table6.
SwitchingtimesSymbolParameterTestconditionsMin.
Typ.
Max.
Unittd(on)Turn-ondelaytimeVDD=300V,ID=7.
5A,RG=4.
7Ω,VGS=10V(seeFigure13.
TestcircuitforresistiveloadswitchingtimesandFigure18.
Switchingtimewaveform)-13.
6-nstrRisetime-6.
3-td(off)Turn-offdelaytime-32-tfFalltime-8.
7-STP22N60M6ElectricalcharacteristicsDS12818-Rev1page3/13Table7.
Source-draindiodeSymbolParameterTestconditionsMin.
Typ.
Max.
UnitISDSource-draincurrent-15AISDM(1)Source-draincurrent(pulsed)-42AVSD(2)ForwardonvoltageISD=15A,VGS=0V-1.
6VtrrReverserecoverytimeISD=15A,di/dt=100A/s,VDD=60V(seeFigure15.
Testcircuitforinductiveloadswitchinganddioderecoverytimes)-217nsQrrReverserecoverycharge-1.
99CIRRMReverserecoverycurrent-18.
3AtrrReverserecoverytimeISD=15A,di/dt=100A/s,VDD=60V,Tj=150°C(seeFigure15.
Testcircuitforinductiveloadswitchinganddioderecoverytimes)-299nsQrrReverserecoverycharge-2.
95μCIRRMReverserecoverycurrent-19.
7A1.
Pulsewidthislimitedbysafeoperatingarea.
2.
Pulsed:pulseduration=300s,dutycycle1.
5%STP22N60M6ElectricalcharacteristicsDS12818-Rev1page4/132.
1Electricalcharacteristics(curves)Figure1.
SafeoperatingareaGIPG061120181053SOA10110010-110-1100101102ID(A)VDS(V)tp=1stp=10stp=1mstp=10mstp=100sOperationinthisareaislimitedbyRDS(on)singlepulseTJ≤150°CTC=25°CVGS=10VFigure2.
ThermalimpedanceFigure3.
OutputcharacteristicsGIPG061120181052OCH4236302418126002468101214ID(A)VDS(V)VGS=6VVGS=7VVGS=8VVGS=10VVGS=9VFigure4.
TransfercharacteristicsGIPG061120181052TCH42363024181260456789ID(A)VGS(V)VDS=14VFigure5.
Gatechargevsgate-sourcevoltageGIPG061120181050QVG6005004003002001000121086420048121620VDS(V)VGS(V)Qg(nC)VDD=480VQgsQgdID=15AQgVDSFigure6.
Staticdrain-sourceon-resistanceGIPG061120181210RID21220820420019619218818402468101214RDS(on)(m)ID(A)VGS=10VSTP22N60M6Electricalcharacteristics(curves)DS12818-Rev1page5/13Figure7.
CapacitancevariationsGIPG061120181052CVR10310210110010-1100101102C(pF)VDS(V)CISSCOSSCRSSf=1MHzFigure8.
OutputcapacitancestoredenergyGADG061120181125EOS8765432100100200300400500600EOSS(J)VDS(V)Figure9.
NormalizedgatethresholdvoltagevstemperatureGADG190720181456VTH1.
11.
00.
90.
80.
70.
6-75-252575125VGS(th)(norm.
)Tj(°C)ID=250AFigure10.
Normalizedon-resistancevstemperatureGADG190720181456RON2.
21.
81.
410.
60.
2-75-252575125RDS(on)(norm.
)Tj(°C)VGS=10VFigure11.
NormalizedV(BR)DSSvstemperatureGADG190720181457BDV1.
081.
041.
000.
960.
920.
88-75-252575125V(BR)DSS(norm.
)Tj(°C)ID=1mAFigure12.
Source-draindiodeforwardcharacteristicsGIPG061120181205SDF1.
11.
00.
90.
80.
70.
60.
502468101214VSD(V)ISD(A)Tj=-50°CTj=25°CTj=150°CSTP22N60M6Electricalcharacteristics(curves)DS12818-Rev1page6/133TestcircuitsFigure13.
TestcircuitforresistiveloadswitchingtimesAM01468v1VDRGRLD.
U.
T.
2200μFVDD3.
3μF+pulsewidthVGSFigure14.
TestcircuitforgatechargebehaviorAM01469v1047kΩ2.
7kΩ1kΩIG=CONST100ΩD.
U.
T.
+pulsewidthVGS2200μFVGVDDRLFigure15.
TestcircuitforinductiveloadswitchinganddioderecoverytimesAM01470v1ADD.
U.
T.
SBG25AABBRGGDS100HF3.
31000FVDDD.
U.
T.
+_+fastdiodeFigure16.
UnclampedinductiveloadtestcircuitAM01471v1VDIDD.
U.
T.
LVDD+pulsewidthVi3.
3F2200FFigure17.
UnclampedinductivewaveformAM01472v1V(BR)DSSVDDVDDVDIDMIDFigure18.
SwitchingtimewaveformAM01473v10VGS90%VDS90%10%90%10%10%tontd(on)tr0tofftd(off)tfSTP22N60M6TestcircuitsDS12818-Rev1page7/134PackageinformationInordertomeetenvironmentalrequirements,SToffersthesedevicesindifferentgradesofECOPACKpackages,dependingontheirlevelofenvironmentalcompliance.
ECOPACKspecifications,gradedefinitionsandproductstatusareavailableat:www.
st.
com.
ECOPACKisanSTtrademark.
STP22N60M6PackageinformationDS12818-Rev1page8/134.
1TO-220packageinformationFigure19.
TO-220typeApackageoutline0015988_typeA_Rev_22STP22N60M6TO-220typeApackageinformationDS12818-Rev1page9/13Table8.
TO-220typeApackagemechanicaldataDim.
mmMin.
Typ.
Max.
A4.
404.
60b0.
610.
88b11.
141.
55c0.
480.
70D15.
2515.
75D11.
27E10.
0010.
40e2.
402.
70e14.
955.
15F1.
231.
32H16.
206.
60J12.
402.
72L13.
0014.
00L13.
503.
93L2016.
40L3028.
90P3.
753.
85Q2.
652.
95STP22N60M6TO-220typeApackageinformationDS12818-Rev1page10/13RevisionhistoryTable9.
DocumentrevisionhistoryDateVersionChanges16-Nov-20181Firstrelease.
STP22N60M6DS12818-Rev1page11/13Contents1Electricalratings22Electricalcharacteristics.
32.
1Electricalcharacteristics(curves)53Testcircuits74Packageinformation.
84.
1TO-220packageinformation8Revisionhistory11STP22N60M6ContentsDS12818-Rev1page12/13IMPORTANTNOTICE–PLEASEREADCAREFULLYSTMicroelectronicsNVanditssubsidiaries("ST")reservetherighttomakechanges,corrections,enhancements,modifications,andimprovementstoSTproductsand/ortothisdocumentatanytimewithoutnotice.
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Purchasersaresolelyresponsibleforthechoice,selection,anduseofSTproductsandSTassumesnoliabilityforapplicationassistanceorthedesignofPurchasers'products.
Nolicense,expressorimplied,toanyintellectualpropertyrightisgrantedbySTherein.
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Informationinthisdocumentsupersedesandreplacesinformationpreviouslysuppliedinanypriorversionsofthisdocument.
2018STMicroelectronics–AllrightsreservedSTP22N60M6DS12818-Rev1page13/13