Derating5555tk.com

FJB5555—NPNSiliconTransistor2008FairchildSemiconductorCorporationwww.
fairchildsemi.
comRev.
1.
1.
01June2013FJB5555NPNSiliconTransistorFeaturesFastSpeedSwitchingWideSafeOperatingAreaHighVoltageCapabilityApplicationElectronicBallastSwitchedModePowerSuppliesOrderingInformationAbsoluteMaximumRatingsStressesexceedingtheabsolutemaximumratingsmaydamagethedevice.
Thedevicemaynotfunctionorbeopera-bleabovetherecommendedoperatingconditionsandstressingthepartstotheselevelsisnotrecommended.
Inaddi-tion,extendedexposuretostressesabovetherecommendedoperatingconditionsmayaffectdevicereliability.
Theabsolutemaximumratingsarestressratingsonly.
ValuesareatTA=25°Cunlessotherwisenoted.
ThermalCharacteristicsValuesareatTA=25°Cunlessotherwisenoted.
Notes:1.
DevicemountedonFR-4PCB,boardsize=101.
5mmx114.
5mm.
2.
Rθjctestfixtureunderinfinitecoolingcondition.
PartNumberMarkingPackagePackingMethodFJB5555TMJ5555D2-PAKTape&ReelSymbolParameterValueUnitsBVCBOCollector-BaseVoltage1050VBVCEOCollector-EmitterVoltage400VBVEBOEmitter-BaseVoltage14VICCollectorCurrent(DC)5AICPCollectorCurrent(Pulse)10AIBBaseCurrent(DC)2AIBPBaseCurrent(Pulse)4ATJJunctionTemperature150°CTSTGStorageJunctionTemperatureRange-55to+150°CSymbolParameterValueUnitsPDTotalDeviceDissipationTA=25°C1.
6WTC=25°C100WRθja(1)ThermalResistance,JunctiontoAmbient77.
75°C/WRθjc(2)ThermalResistance,JunctiontoCase1.
25°C/W1.
Base2.
Collector3.
Emitter1D2-PAK123BCEFJB5555—NPNSiliconTransistor2008FairchildSemiconductorCorporationwww.
fairchildsemi.
comRev.
1.
1.
02ElectricalCharacteristics(3)ValuesareatTA=25°Cunlessotherwisenoted.
Note:3.
Pulsetest:pulsewidth≤300μs,dutycycle≤2%.
SymbolParameterConditionsMin.
Typ.
Max.
UnitsBVCBOCollector-BaseBreakdownVoltageIC=500μA,IE=01050VBVCEOCollector-EmitterBreakdownVoltageIC=5mA,IB=0400VBVEBOEmitter-BaseBreakdownVoltageIE=500μA,IC=014VhFEDCCurrentGainVCE=5V,IC=10mA10VCE=3V,IC=0.
8A2040VCE(sat)Collector-EmitterSaturationVoltageIC=1A,IB=0.
2A0.
170.
50VIC=3.
5A,IB=1.
0A1.
5VVBE(sat)Base-EmitterSaturationVoltageIC=3.
5A,IB=1.
0A1.
2VCobOutputCapacitanceVCB=10V,f=1MHz45pFtONTurn-OnTimeVCC=125V,IC=0.
5A,IB1=45mA,IB2=-0.
5A,RL=250Ω1.
0μstSTGStorageTime1.
2μstFFallTime0.
3μstONTurn-OnTimeVCC=250V,IC=2.
5A,IB1=0.
5A,IB2=-1.
0A,RL=100Ω2.
0μstSTGStorageTime2.
5μstFFallTime0.
3μsEASAvalancheEnergyL=2mH6mJFJB5555—NPNSiliconTransistor2008FairchildSemiconductorCorporationwww.
fairchildsemi.
comRev.
1.
1.
03TypicalPerformanceCharacteristicsFigure1.
DCCurrentGainFigure2.
SaturationVoltageFigure3.
SaturationVoltageFigure4.
ResistiveLoadSwitchingFigure5.
ResistiveLoadSwitchingFigure6.
PowerDerating0.
010.
1110110100VCE=5VTa=25oCTa=75oCTa=125oCTa=-25oChFE,DCCURRENTGAINIC[A],COLLECTORCURRENT0.
11100.
11IC=5IBTa=25oCTa=75oCTa=125oCTa=-25oCVCE(SAT)[V],Collector-EmitterSaturationVoltageIC[A],COLLECTORCURRENT0.
010.
11100.
11Ta=125oCTa=75oCTa=25oCTa=-25oCIC=5IBVBE(sat)[V],SATURATIONVOLTAGEIC[A],COLLECTORCURRENT0.
11101001000tFtSTGVCC=125VIB1=45mA,IB2=0.
5AtSTG&tF[ns],SWITCHINGTIMEIC[A],COLLECTORCURRENT0.
111010100100010000tFtSTGVCC=250VIB1=0.
5A,IB2=1.
0AtSTG&tF[ns],SWITCHINGTIMEIC[A],COLLECTORCURRENT02550751001251501750102030405060708090100110120PC[W],POWERDISSIPATIONTc[oC],CASETEMPERATUREFJB5555—NPNSiliconTransistor2008FairchildSemiconductorCorporationwww.
fairchildsemi.
comRev.
1.
1.
04TypicalPerformanceCharacteristics(Continued)Figure7.
ReverseBiasSafeOperating200300400500600700800900100011001200012345678-5VVcc=50VVBE(off)=-5VLC=1mHIc=4IbIC[A],COLLECTORCURRENTVCE[V],COLLECTOR-EMITTERVOLTAGEFJB5555—NPNSiliconTransistor2008FairchildSemiconductorCorporationwww.
fairchildsemi.
comRev.
1.
1.
05PhysicalDimensionsFigure8.
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AlwaysvisitFairchildSemiconductor'sonlinepackagingareaforthemostrecentpackagedrawings:http://www.
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Forcurrenttapeandreelspecifications,visitFairchildSemiconductor'sonlinepackagingarea:http://www.
fairchildsemi.
com/packing_dwg/PKG-TO263A02.
pdf.
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