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1.
GeneraldescriptionTheBGU8L1is,alsoknownastheLTE1001L,aLow-NoiseAmplifier(LNA)forLTEreceiverapplications,availableinasmallplastic6-pinextremelythinleadlesspackage.
TheBGU8L1requiresoneexternalmatchinginductor.
TheBGU8L1adaptsitselftothechangingenvironmentresultingfromco-habitationofdifferentradiosystemsinmoderncellularhandsets.
Ithasbeendesignedforlowpowerconsumptionandoptimalperformance.
Atlowjammingpowerlevels,itdelivers14dBgainatanoisefigureof0.
7dB.
Duringhigh-powerlevels,ittemporarilyincreasesitsbiascurrenttoimprovesensitivity.
TheBGU8L1isoptimizedfor728MHzto960MHz.
2.
FeaturesandbenefitsOperatingfrequencyfrom728MHzto960MHzNoisefigure=0.
7dBGain=14dBHighinput1dBcompressionpointof3dBmHighinbandIP3iof2dBmSupplyvoltage1.
5Vto3.
1VSelf-shieldingpackageconceptIntegratedsupplydecouplingcapacitorOptimizedperformanceatasupplycurrentof4.
6mAPower-downmodecurrentconsumption2kV)IntegratedmatchingfortheoutputAvailableina6-pinleadlesspackage1.
1mm0.
7mm0.
37mm;0.
4mmpitch:SOT1232180GHztransitfrequency-SiGe:CtechnologyMoisturesensitivitylevel1BGU8L1SiGe:Clow-noiseamplifierMMICforLTERev.
3—16January2017Productdatasheet;621BGU8L1Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—16January20172of11NXPSemiconductorsBGU8L1SiGe:Clow-noiseamplifierMMICforLTE3.
ApplicationsLNAforLTEreceptioninsmartphonesFeaturephonesTabletPCsRFfront-endmodules4.
Quickreferencedata[1]E-UTRAoperatingband5(869MHzto894MHz).
[2]PCBlossesaresubtracted.
[3]Guaranteedbydevicedesign;nottestedinproduction.
5.
OrderinginformationTable1.
Quickreferencedataf=882MHz;VCC=2.
8V;VI(ENABLE)0.
8V;Tamb=25°C;inputmatchedto50usinga15nHinductor;unlessotherwisespecified.
SymbolParameterConditionsMinTypMaxUnitVCCsupplyvoltage1.
5-3.
1VICCsupplycurrent2.
64.
66.
6mAGppowergain[1]12.
514.
516.
5dBNFnoisefigure[1][2][3]-0.
71.
3dBPi(1dB)inputpowerat1dBgaincompression[1][3]7.
03.
0-dBmIP3iinputthird-orderinterceptpoint[1][3]3.
0+2.
0-dBmTable2.
OrderinginformationTypenumberPackageNameDescriptionVersionBGU8L1XSON6plasticextremelythinsmalloutlinepackage;noleads;6terminals;body1.
10.
70.
37mmSOT1232BGU8L1Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—16January20173of11NXPSemiconductorsBGU8L1SiGe:Clow-noiseamplifierMMICforLTE6.
Blockdiagram7.
Pinninginformation7.
1Pinning7.
2PindescriptionFig1.
BlockdiagramDDD%,$6&21752/%*8[(1$%/(5)B,15)B2879&&Fig2.
Pinconfiguration5)B287*1'B5)9&&5)B,1*1'(1$%/(7UDQVSDUHQWWRSYLHZDDDTable3.
PindescriptionSymbolPinDescriptionGND1groundVCC2supplyvoltageRF_OUT3RFoutputGND_RF4groundRFRF_IN5RFinputENABLE6enableBGU8L1Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—16January20174of11NXPSemiconductorsBGU8L1SiGe:Clow-noiseamplifierMMICforLTE8.
Limitingvalues[1]Stressedwithpulsesof1sinduration.
VCCconnectedtoapowersupplyof2.
8Vwith500mAcurrentlimit.
[2]Warning:DuetointernalESDdiodeprotection,toavoidexcesscurrent,theappliedDCvoltagemustnotexceedVCC+0.
6Vor5.
0V.
[3]TheRFoutputisACcoupledthroughinternalDCblockingcapacitors.
9.
Recommendedoperatingconditions10.
ThermalcharacteristicsTable4.
LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
Absolutemaximumratingsaregivenaslimitingvaluesofstressconditionsduringoperation,thatmustnotbeexceededundertheworstprobableconditions.
SymbolParameterConditionsMinMaxUnitVCCsupplyvoltageRFinputACcoupled[1]0.
5+5.
0VVI(ENABLE)inputvoltageonpinENABLEVI(ENABLE)6V[1][2]0.
5+5.
0VVI(RF_IN)inputvoltageonpinRF_INDC;VI(RF_IN)6V[1][2]0.
5+5.
0VVI(RF_OUT)inputvoltageonpinRF_OUTDC;VI(RF_OUT)6V[1][2][3]0.
5+5.
0VPiinputpower[1]-26dBmPtottotalpowerdissipationTsp130°C-55mWTstgstoragetemperature65+150°CTjjunctiontemperature-150°CVESDelectrostaticdischargevoltageHumanBodyModel(HBM)accordingtoANSI/ESDA/JEDECstandardJS-001-2kVChargedDeviceModel(CDM)accordingtoJEDECstandardJESD22-C101C-1kVTable5.
OperatingconditionsSymbolParameterConditionsMinTypMaxUnitVCCsupplyvoltage1.
5-3.
1VTambambienttemperature40+25+85CVI(ENABLE)inputvoltageonpinENABLEOFFstate--0.
3VONstate0.
8--VTable6.
ThermalcharacteristicsSymbolParameterConditionsTypUnitRth(j-sp)thermalresistancefromjunctiontosolderpoint225K/WBGU8L1Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—16January20175of11NXPSemiconductorsBGU8L1SiGe:Clow-noiseamplifierMMICforLTE11.
Characteristics[1]E-UTRAoperatingband17(734MHzto746MHz).
[2]E-UTRAoperatingband5(869MHzto894MHz).
[3]E-UTRAoperatingband8(925MHzto960MHz).
[4]PCBlossesaresubtracted.
[5]Guaranteedbydevicedesign;nottestedinproduction.
Table7.
CharacteristicsatVCC=1.
8V728MHzf960MHz;VCC=1.
8V;VI(ENABLE)0.
8V;Tamb=25C;inputmatchedto50usinga15nHinductor;unlessotherwisespecified.
SymbolParameterConditionsMinTypMaxUnitICCsupplycurrentVI(ENABLE)0.
8V2.
24.
26.
2mAVI(ENABLE)0.
3V--1.
0AGppowergainf=740MHz[1]-14.
5-dBf=882MHz[2]12.
514.
516.
5dBf=943MHz[3]-14.
0-dBRLininputreturnlossf=740MHz[1]-9.
0-dBf=882MHz[2]-13.
0-dBf=943MHz[3]-11.
0-dBRLoutoutputreturnlossf=740MHz[1]-12.
0-dBf=882MHz[2]-20.
0-dBf=943MHz[3]-20.
0-dBISLisolationf=740MHz[1]-25.
0-dBf=882MHz[2]-25.
0-dBf=943MHz[3]-26.
0-dBNFnoisefiguref=740MHz[1][4]-0.
7-dBf=882MHz[2][4][5]-0.
71.
3dBf=943MHz[3][4]-0.
8-dBPi(1dB)inputpowerat1dBgaincompressionf=740MHz[1]-11.
0-dBmf=882MHz[2][5]14.
010.
0-dBmf=943MHz[3]-9.
0-dBmIP3iinputthird-orderinterceptpointf=740MHz[1]-5.
0-dBmf=882MHz[2][5]8.
03.
0-dBmf=943MHz[3]-2.
0-dBmKRollettstabilityfactor1---tonturn-ontimetimefromVI(ENABLE)ONto90%ofthegain--4stoffturn-offtimetimefromVI(ENABLE)OFFto10%ofthegain--1sBGU8L1Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—16January20176of11NXPSemiconductorsBGU8L1SiGe:Clow-noiseamplifierMMICforLTE[1]E-UTRAoperatingband17(734MHzto746MHz).
[2]E-UTRAoperatingband5(869MHzto894MHz).
[3]E-UTRAoperatingband8(925MHzto960MHz).
[4]PCBlossesaresubtracted.
[5]Guaranteedbydevicedesign;nottestedinproduction.
Table8.
CharacteristicsatVCC=2.
8V728MHzf960MHz;VCC=2.
8V;VI(ENABLE)0.
8V;Tamb=25C;inputmatchedto50usinga15nHinductor;unlessotherwisespecified.
SymbolParameterConditionsMinTypMaxUnitICCsupplycurrentVI(ENABLE)0.
8V2.
64.
66.
6mAVI(ENABLE)0.
3V--1AGppowergainf=740MHz[1]-14.
5-dBf=882MHz[2]12.
514.
516.
5dBf=943MHz[3]-14.
0-dBRLininputreturnlossf=740MHz[1]-9.
0-dBf=882MHz[2]-14.
0-dBf=943MHz[3]-12.
0-dBRLoutoutputreturnlossf=740MHz[1]-12.
0-dBf=882MHz[2]-20.
0-dBf=943MHz[3]-20.
0-dBISLisolationf=740MHz[1]-26.
0-dBf=882MHz[2]-26.
0-dBf=943MHz[3]-26.
0-dBNFnoisefiguref=740MHz[1][4]-0.
7-dBf=882MHz[2][4][5]-0.
71.
3dBf=943MHz[3][4]-0.
8-dBPi(1dB)inputpowerat1dBgaincompressionf=740MHz[1]-5.
0-dBmf=882MHz[2][5]7.
03.
0-dBmf=943MHz[3]-3.
0-dBmIP3iinputthird-orderinterceptpointf=740MHz[1]-1.
0-dBmf=882MHz[2][5]3.
0+2.
0-dBmf=943MHz[3]-2.
0-dBmKRollettstabilityfactor1---tonturn-ontimetimefromVI(ENABLE)ONto90%ofthegain--4.
0stoffturn-offtimetimefromVI(ENABLE)OFFto10%ofthegain--1.
0sBGU8L1Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—16January20177of11NXPSemiconductorsBGU8L1SiGe:Clow-noiseamplifierMMICforLTE12.
PackageoutlineFig3.
PackageoutlineSOT1232(XSON6)5HIHUHQFHV2XWOLQHYHUVLRQ(XURSHDQSURMHFWLRQ,VVXHGDWH7$627VRWBSR8QLWPPPLQQRPPD[$'LPHQVLRQVPPDUHWKHRULJLQDOGLPHQVLRQV1RWH'LPHQVLRQ$LVLQFOXGLQJSODWLQJWKLFNQHVV627$'(H/9<NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—16January20178of11NXPSemiconductorsBGU8L1SiGe:Clow-noiseamplifierMMICforLTE13.
Handlinginformation14.
Abbreviations15.
RevisionhistoryCAUTIONThisdeviceissensitivetoElectroStaticDischarge(ESD).
Observeprecautionsforhandlingelectrostaticsensitivedevices.
SuchprecautionsaredescribedintheANSI/ESDS20.
20,IEC/ST61340-5,JESD625-Aorequivalentstandards.
Table9.
AbbreviationsAcronymDescriptionESDElectroStaticDischargeE-UTRAEvolvedUMTSTerrestrialRadioAccessHBMHumanBodyModelLNALow-NoiseAmplifierLTELongTermEvolutionMMICMonolithicMicrowaveIntegratedCircuitPCBPrinted-CircuitBoardSiGe:CSiliconGermaniumCarbonTable10.
RevisionhistoryDocumentIDReleasedateDatasheetstatusChangenoticeSupersedesBGU8L1v.
320170116Productdatasheet-BGU8L1v.
2Modifications:Section1:addedLTE1001LaccordingtoournewnamingconventionBGU8L1v.
220160404Productdatasheet-BGU8L1v.
1Modifications:Table4:updatedinputpowerTable7:updatedTable8:updatedBGU8L1v.
120140603Productdatasheet--BGU8L1Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—16January20179of11NXPSemiconductorsBGU8L1SiGe:Clow-noiseamplifierMMICforLTE16.
Legalinformation16.
1Datasheetstatus[1]Pleaseconsultthemostrecentlyissueddocumentbeforeinitiatingorcompletingadesign.
[2]Theterm'shortdatasheet'isexplainedinsection"Definitions".
[3]Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.
ThelatestproductstatusinformationisavailableontheInternetatURLhttp://www.
nxp.
com.
16.
2DefinitionsDraft—Thedocumentisadraftversiononly.
Thecontentisstillunderinternalreviewandsubjecttoformalapproval,whichmayresultinmodificationsoradditions.
NXPSemiconductorsdoesnotgiveanyrepresentationsorwarrantiesastotheaccuracyorcompletenessofinformationincludedhereinandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
Shortdatasheet—Ashortdatasheetisanextractfromafulldatasheetwiththesameproducttypenumber(s)andtitle.
Ashortdatasheetisintendedforquickreferenceonlyandshouldnotbereliedupontocontaindetailedandfullinformation.
Fordetailedandfullinformationseetherelevantfulldatasheet,whichisavailableonrequestviathelocalNXPSemiconductorssalesoffice.
Incaseofanyinconsistencyorconflictwiththeshortdatasheet,thefulldatasheetshallprevail.
Productspecification—TheinformationanddataprovidedinaProductdatasheetshalldefinethespecificationoftheproductasagreedbetweenNXPSemiconductorsanditscustomer,unlessNXPSemiconductorsandcustomerhaveexplicitlyagreedotherwiseinwriting.
Innoeventhowever,shallanagreementbevalidinwhichtheNXPSemiconductorsproductisdeemedtoofferfunctionsandqualitiesbeyondthosedescribedintheProductdatasheet.
16.
3DisclaimersLimitedwarrantyandliability—Informationinthisdocumentisbelievedtobeaccurateandreliable.
However,NXPSemiconductorsdoesnotgiveanyrepresentationsorwarranties,expressedorimplied,astotheaccuracyorcompletenessofsuchinformationandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
NXPSemiconductorstakesnoresponsibilityforthecontentinthisdocumentifprovidedbyaninformationsourceoutsideofNXPSemiconductors.
InnoeventshallNXPSemiconductorsbeliableforanyindirect,incidental,punitive,specialorconsequentialdamages(including-withoutlimitation-lostprofits,lostsavings,businessinterruption,costsrelatedtotheremovalorreplacementofanyproductsorreworkcharges)whetherornotsuchdamagesarebasedontort(includingnegligence),warranty,breachofcontractoranyotherlegaltheory.
Notwithstandinganydamagesthatcustomermightincurforanyreasonwhatsoever,NXPSemiconductors'aggregateandcumulativeliabilitytowardscustomerfortheproductsdescribedhereinshallbelimitedinaccordancewiththeTermsandconditionsofcommercialsaleofNXPSemiconductors.
Righttomakechanges—NXPSemiconductorsreservestherighttomakechangestoinformationpublishedinthisdocument,includingwithoutlimitationspecificationsandproductdescriptions,atanytimeandwithoutnotice.
Thisdocumentsupersedesandreplacesallinformationsuppliedpriortothepublicationhereof.
Suitabilityforuse—NXPSemiconductorsproductsarenotdesigned,authorizedorwarrantedtobesuitableforuseinlifesupport,life-criticalorsafety-criticalsystemsorequipment,norinapplicationswherefailureormalfunctionofanNXPSemiconductorsproductcanreasonablybeexpectedtoresultinpersonalinjury,deathorseverepropertyorenvironmentaldamage.
NXPSemiconductorsanditssuppliersacceptnoliabilityforinclusionand/oruseofNXPSemiconductorsproductsinsuchequipmentorapplicationsandthereforesuchinclusionand/oruseisatthecustomer'sownrisk.
Applications—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.
NXPSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertestingormodification.
CustomersareresponsibleforthedesignandoperationoftheirapplicationsandproductsusingNXPSemiconductorsproducts,andNXPSemiconductorsacceptsnoliabilityforanyassistancewithapplicationsorcustomerproductdesign.
Itiscustomer'ssoleresponsibilitytodeterminewhethertheNXPSemiconductorsproductissuitableandfitforthecustomer'sapplicationsandproductsplanned,aswellasfortheplannedapplicationanduseofcustomer'sthirdpartycustomer(s).
Customersshouldprovideappropriatedesignandoperatingsafeguardstominimizetherisksassociatedwiththeirapplicationsandproducts.
NXPSemiconductorsdoesnotacceptanyliabilityrelatedtoanydefault,damage,costsorproblemwhichisbasedonanyweaknessordefaultinthecustomer'sapplicationsorproducts,ortheapplicationorusebycustomer'sthirdpartycustomer(s).
Customerisresponsiblefordoingallnecessarytestingforthecustomer'sapplicationsandproductsusingNXPSemiconductorsproductsinordertoavoidadefaultoftheapplicationsandtheproductsoroftheapplicationorusebycustomer'sthirdpartycustomer(s).
NXPdoesnotacceptanyliabilityinthisrespect.
Limitingvalues—Stressaboveoneormorelimitingvalues(asdefinedintheAbsoluteMaximumRatingsSystemofIEC60134)willcausepermanentdamagetothedevice.
Limitingvaluesarestressratingsonlyand(proper)operationofthedeviceattheseoranyotherconditionsabovethosegivenintheRecommendedoperatingconditionssection(ifpresent)ortheCharacteristicssectionsofthisdocumentisnotwarranted.
Constantorrepeatedexposuretolimitingvalueswillpermanentlyandirreversiblyaffectthequalityandreliabilityofthedevice.
Termsandconditionsofcommercialsale—NXPSemiconductorsproductsaresoldsubjecttothegeneraltermsandconditionsofcommercialsale,aspublishedathttp://www.
nxp.
com/profile/terms,unlessotherwiseagreedinavalidwrittenindividualagreement.
Incaseanindividualagreementisconcludedonlythetermsandconditionsoftherespectiveagreementshallapply.
NXPSemiconductorsherebyexpresslyobjectstoapplyingthecustomer'sgeneraltermsandconditionswithregardtothepurchaseofNXPSemiconductorsproductsbycustomer.
Nooffertosellorlicense—Nothinginthisdocumentmaybeinterpretedorconstruedasanoffertosellproductsthatisopenforacceptanceorthegrant,conveyanceorimplicationofanylicenseunderanycopyrights,patentsorotherindustrialorintellectualpropertyrights.
Documentstatus[1][2]Productstatus[3]DefinitionObjective[short]datasheetDevelopmentThisdocumentcontainsdatafromtheobjectivespecificationforproductdevelopment.
Preliminary[short]datasheetQualificationThisdocumentcontainsdatafromthepreliminaryspecification.
Product[short]datasheetProductionThisdocumentcontainstheproductspecification.
BGU8L1Allinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
NXPSemiconductorsN.
V.
2017.
Allrightsreserved.
ProductdatasheetRev.
3—16January201710of11NXPSemiconductorsBGU8L1SiGe:Clow-noiseamplifierMMICforLTEQuickreferencedata—TheQuickreferencedataisanextractoftheproductdatagivenintheLimitingvaluesandCharacteristicssectionsofthisdocument,andassuchisnotcomplete,exhaustiveorlegallybinding.
Exportcontrol—Thisdocumentaswellastheitem(s)describedhereinmaybesubjecttoexportcontrolregulations.
Exportmightrequireapriorauthorizationfromcompetentauthorities.
Non-automotivequalifiedproducts—UnlessthisdatasheetexpresslystatesthatthisspecificNXPSemiconductorsproductisautomotivequalified,theproductisnotsuitableforautomotiveuse.
Itisneitherqualifiednortestedinaccordancewithautomotivetestingorapplicationrequirements.
NXPSemiconductorsacceptsnoliabilityforinclusionand/oruseofnon-automotivequalifiedproductsinautomotiveequipmentorapplications.
Intheeventthatcustomerusestheproductfordesign-inanduseinautomotiveapplicationstoautomotivespecificationsandstandards,customer(a)shallusetheproductwithoutNXPSemiconductors'warrantyoftheproductforsuchautomotiveapplications,useandspecifications,and(b)whenevercustomerusestheproductforautomotiveapplicationsbeyondNXPSemiconductors'specificationssuchuseshallbesolelyatcustomer'sownrisk,and(c)customerfullyindemnifiesNXPSemiconductorsforanyliability,damagesorfailedproductclaimsresultingfromcustomerdesignanduseoftheproductforautomotiveapplicationsbeyondNXPSemiconductors'standardwarrantyandNXPSemiconductors'productspecifications.
Translations—Anon-English(translated)versionofadocumentisforreferenceonly.
TheEnglishversionshallprevailincaseofanydiscrepancybetweenthetranslatedandEnglishversions.
16.
4TrademarksNotice:Allreferencedbrands,productnames,servicenamesandtrademarksarethepropertyoftheirrespectiveowners.
17.
ContactinformationFormoreinformation,pleasevisit:http://www.
nxp.
comForsalesofficeaddresses,pleasesendanemailto:salesaddresses@nxp.
comNXPSemiconductorsBGU8L1SiGe:Clow-noiseamplifierMMICforLTENXPSemiconductorsN.
V.
2017.
Allrightsreserved.
Formoreinformation,pleasevisit:http://www.
nxp.
comForsalesofficeaddresses,pleasesendanemailto:salesaddresses@nxp.
comDateofrelease:16January2017Documentidentifier:BGU8L1Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s)describedherein,havebeenincludedinsection'Legalinformation'.
18.
Contents1Generaldescription12Featuresandbenefits13Applications24Quickreferencedata25Orderinginformation.
26Blockdiagram37Pinninginformation.
37.
1Pinning37.
2Pindescription38Limitingvalues.
49Recommendedoperatingconditions.
410Thermalcharacteristics.
411Characteristics.
512Packageoutline713Handlinginformation.
814Abbreviations815Revisionhistory.
816Legalinformation.
916.
1Datasheetstatus916.
2Definitions.
916.
3Disclaimers916.
4Trademarks.
1017Contactinformation.
1018Contents11