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QPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyTransistorDataSheet,October14,2019|Subjecttochangewithoutnotice.
1of9www.
qorvo.
com4-LeadNI780PackageKeyFeaturesOperatingFrequencyRange:3.
4–3.
8GHzOperatingDrainVoltage:+48VDohertyOutputPoweratP4dB:389W(1)DohertyDrainEfficiencyP4dB:57.
4%(1)DohertyLinearGain:15.
6dB(1)4-Lead,Earless,CeramicNI780PackageNote:1.
BasedonpulsedP4dBperformanceat3.
75GHz.
ProductOverviewTheQPD3640isadual-pathdiscreteGaNonSiCHEMTwhichoperatesonLTEdownlinkBand42(3.
4-3.
6GHz)andBand43(3.
6-3.
8GHz).
Thedeviceisasingle-stage,matched,powerDohertyamplifiertransistor.
QPD3640candeliverP4dBof389Wat+50Voperation.
LeadfreeandRoHScompliant.
FunctionalBlockDiagramApplicationsWCDMA/LTEMacrocellBaseStationAsymmetricDohertyApplicationsOrderingInformationPartNumberDescriptionQPD3640SRShortReel–100PiecesQPD3640TR1313"Reel–2500PiecesQPD3640EVB023.
5–3.
7GHzDohertyEval.
BoardQPD3640EVB033.
4–3.
6GHzDohertyEval.
BoardQPD3640EVB043.
6–3.
8GHzDohertyEval.
BoardQPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
2of9www.
qorvo.
comRecommendedOperatingConditionsParameterMinTypMaxUnitCarrierGateVoltage(VG1)2.
8VPeakingGateVoltage(VG2)5.
5VDrainVoltage(VD1,2)+48VCarrierQuiescentCurrent(IDQ1)342mAElectricalspecificationsaremeasuredatspecifiedtestconditions.
Specificationsarenotguaranteedoverallrecommendedoperatingconditions.
AbsoluteMaximumRatingsParameterRatingBreakdownVoltage(BVDG)+165VGateVoltageRange(VG1,2)7to+2VDrainVoltage(VD1,2)+55VPeakRFInputPower+42dBmVSWRMismatch,P1dBPulse(10%DutyCycle,100sWidth),T=+25°C10:1StorageTemperature65to+150°CExceedinganyoneoracombinationoftheAbsoluteMaximumRatingconditionsmaycausepermanentdamagetothedevice.
ExtendedapplicationofAbsoluteMaximumRatingconditionstothedevicemayreducedevicereliability.
ElectricalSpecificationsParameterConditionsMinTypMaxUnitsOperationalFrequencyRange36003800MHzCarrierQuiescentDrainCurrent342mALinearDohertyGainP4dB15.
6dBDohertyOutputPowerP4dB55.
9dBmDohertyDrainEfficiencyP4dB57.
4%CarrierAmplifierGateLeakage27.
5mAPeakingAmplifierGateLeakage48.
0mATestconditionsunlessotherwisenoted:VD1,2=+50V,IDQ1=342mA,VG2=5.
5V,T=+25°C,Pulsed(10%DutyCycle,100sWidth)at3750MHzonareferencedesignfixture.
ThermalInformationParameterConditionsValuesUnitsThermalResistance,PeakIRSurfaceTemperatureatAveragePower(θJC)TCASE=+105°C,TCH=144°CCW:PDISS=36.
9W,POUT=42.
2W1.
1°C/WNotes:1.
BasedonexpectedcarrieramplifierefficiencyofDoherty.
2.
POUTassumes25%peakingamplifiercontributionoftotalaverageDohertyratedpower.
3.
Thermalresistanceismeasuredtopackagebackside.
4.
Refertothefollowingdocument:GaNDeviceChannelTemperature,ThermalResistance,andReliabilityEstimatesQPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
3of9www.
qorvo.
comCarrierAmplifierPower-MatchedLoadPullPerformanceFrequency(MHz)SourceImpedance()LoadImpedance()P3dB(dBm)DrainEfficiency(%)G3dB(dB)34005.
42–j18.
785.
79–j1.
6653.
560.
816.
236008.
92–j22.
513.
84–j2.
2953.
559.
716.
9380013.
12–j9.
383.
06–j4.
5353.
257.
115.
7Testconditionsunlessotherwisenoted:VD1=+50V,IDQ1=342mA,T=+25°C,Pulsed(10%DutyCycle,100sWidth),P3dB.
CarrierAmplifierEfficiency-MatchedLoadPullPerformanceFrequency(MHz)SourceImpedance()LoadImpedance()P3dB(dBm)DrainEfficiency(%)G3dB(dB)34005.
42–j18.
7810.
84–j7.
8651.
673.
118.
636008.
92–j22.
5111.
09–j1.
5451.
472.
720.
1380013.
12–j9.
385.
40–j2.
1252.
168.
118.
2Testconditionsunlessotherwisenoted:VD1=+50V,IDQ1=342mA,T=+25°C,Pulsed(10%DutyCycle,100sWidth),P3dB.
PeakingAmplifierPower-MatchedLoadPullPerformanceFrequency(MHz)SourceImpedance()LoadImpedance()P1dB(dBm)DrainEfficiency(%)G1dB(dB)34003.
81–j15.
1511.
42–j7.
7855.
262.
215.
0360010.
48–j14.
419.
16–j4.
0255.
159.
914.
838005.
02–j4.
017.
68–j2.
6055.
258.
113.
9Testconditionsunlessotherwisenoted:VD2=+50V,VG2=4.
5V,T=+25°C,Pulsed(10%DutyCycle,100sWidth),P1dB.
PeakingAmplifierEfficiency-MatchedLoadPullPerformanceFrequency(MHz)SourceImpedance()LoadImpedance()P1dB(dBm)DrainEfficiency(%)G1dB(dB)34003.
81–j15.
156.
34–j13.
3553.
773.
916.
0360010.
48–j14.
419.
15–j11.
9953.
571.
715.
638005.
02–j4.
0113.
28–j9.
1953.
768.
214.
4Testconditionsunlessotherwisenoted:VD2=+50V,VG2=4.
5V,T=+25°C,Pulsed(10%DutyCycle,100sWidth),P1dB.
QPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
4of9www.
qorvo.
comCarrierAmplifierLoadPullPlotsTestconditionsunlessotherwisenoted:VD1=+50V,IDQ1=342mA,T=+25°C,Pulsed(10%DutyCycle,100sWidth),P3dB.
QPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
5of9www.
qorvo.
comPeakingAmplifierLoadPullPlotsTestconditionsunlessotherwisenoted:VD2=+50V,VG2=4.
5V,T=+25°C,Pulsed(10%DutyCycle,100sWidth),P1dB.
QPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
6of9www.
qorvo.
comPackageMarkingandDimensionsMarking:QorvoLogoPartNumber–QPD3640DateCode–YYWWLotCode–MXXXSerialNumber–ZZZNotes:UnlessOtherwiseSpecified;1.
Material:PackageBase:Ceramic/MetalPackageLid:Ceramic2.
PackageexposedmetalbaseandleadsareNiAuplated.
Authicknessisminimum60in.
3.
Partisepoxysealed.
4.
PartmeetsindustrystandardNI780footprint.
5.
Bodydimensionsdonotincludelidshiftorepoxyrunout,whichcanbeupto0.
020inchesperside.
6.
Alldimensionsareininches.
Anglesareindegrees.
7.
Generaltoleranceis±0.
005unlessotherwiseshown.
QPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
7of9www.
qorvo.
comPinConfigurationandDescriptionTopViewBottomViewPinNumberLabelDescription1RFIN1,VG1CarrierAmplifierRFInput,GateBias2RFIN2,VG2PeakingAmplifierRFInput,GateBias3RFOUT2,VD2PeakingAmplifierRFOutput,DrainBias4RFOUT1,VD1CarrierAmplifierRFOutput,DrainBias5(BacksidePaddle)RF/DCGNDRF/DCGroundDohertyBiasingProcedureBiasOnBiasOff1.
TurnONVG1andVG2to4V.
2.
TurnONVD1andVD2to+50V.
3.
AdjustVG2untilID2=600mA(VG2_SET).
4.
Subtract2.
5VfromVG2_SET(VG2=VG2_SET–2.
5V).
(Typically,VG2=5.
5V.
)5.
AdjustVG1untilID1=342mA.
(Typically,VG1=2.
8V.
)6.
TurnONRF.
1.
TurnOFFRF.
2.
AdjustVG1andVG2to5V.
3.
TurnOFFVD1andVD2.
4.
Waittwo(2)secondstoallowdraincapacitorchargetodissipate.
5.
TurnOFFVG1andVG2.
QPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
8of9www.
qorvo.
comRecommendedSolderTemperatureProfileQPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
9of9www.
qorvo.
comHandlingPrecautionsParameterRatingStandardCaution!
ESD-SensitiveDeviceESD–HumanBodyModel(HBM)Class1B(500V)ANSI/ESDA/JEDECStandardJS-001ESD–ChargedDeviceModel(CDM)ClassC3(1000V)ANSI/ESDA/JEDECStandardJS-002MSL–MoistureSensitivityLevelLevel3IPC/JEDECStandardJ-STD-020SolderabilityCompatiblewithlead-free(260°Cmaximumreflowtemperature)solderingprocesses.
Theuseofno-cleansoldertoavoidwashingaftersolderingisrecommended.
PackageleadplatingisNiAu.
Authicknessisminimum60in.
RoHSComplianceThispartiscompliantwith2011/65/EURoHSdirective(RestrictionsontheUseofCertainHazardousSubstancesinElectricalandElectronicEquipment)asamendedbyDirective2015/863/EU.
Thisproductalsohasthefollowingattributes:LeadFreeAntimonyFreeTBBP-A(C15H12Br402)FreePFOSFreeSVHCFreeContactInformationForthelatestspecifications,additionalproductinformation,worldwidesalesanddistributionlocations:Web:www.
qorvo.
comTel:1-844-890-8163Email:customer.
support@qorvo.
comImportantNoticeTheinformationcontainedhereinisbelievedtobereliable;however,Qorvomakesnowarrantiesregardingtheinformationcontainedhereinandassumesnoresponsibilityorliabilitywhatsoeverfortheuseoftheinformationcontainedherein.
Allinformationcontainedhereinissubjecttochangewithoutnotice.
CustomersshouldobtainandverifythelatestrelevantinformationbeforeplacingordersforQorvoproducts.
Theinformationcontainedhereinoranyuseofsuchinformationdoesnotgrant,explicitlyorimplicitly,toanypartyanypatentrights,licenses,oranyotherintellectualpropertyrights,whetherwithregardtosuchinformationitselforanythingdescribedbysuchinformation.
THISINFORMATIONDOESNOTCONSTITUTEAWARRANTYWITHRESPECTTOTHEPRODUCTSDESCRIBEDHEREIN,ANDQORVOHEREBYDISCLAIMSANYANDALLWARRANTIESWITHRESPECTTOSUCHPRODUCTSWHETHEREXPRESSORIMPLIEDBYLAW,COURSEOFDEALING,COURSEOFPERFORMANCE,USAGEOFTRADEOROTHERWISE,INCLUDINGTHEIMPLIEDWARRANTIESOFMERCHANTABILITYANDFITNESSFORAPARTICULARPURPOSE.
Withoutlimitingthegeneralityoftheforegoing,Qorvoproductsarenotwarrantedorauthorizedforuseascriticalcomponentsinmedical,life-saving,orlife-sustainingapplications,orotherapplicationswhereafailurewouldreasonablybeexpectedtocauseseverepersonalinjuryordeath.
Copyright2019Qorvo,Inc.
|QorvoisaregisteredtrademarkofQorvo,Inc.
4–3.
8GHz,AsymmetricDohertyTransistorDataSheet,October14,2019|Subjecttochangewithoutnotice.
1of9www.
qorvo.
com4-LeadNI780PackageKeyFeaturesOperatingFrequencyRange:3.
4–3.
8GHzOperatingDrainVoltage:+48VDohertyOutputPoweratP4dB:389W(1)DohertyDrainEfficiencyP4dB:57.
4%(1)DohertyLinearGain:15.
6dB(1)4-Lead,Earless,CeramicNI780PackageNote:1.
BasedonpulsedP4dBperformanceat3.
75GHz.
ProductOverviewTheQPD3640isadual-pathdiscreteGaNonSiCHEMTwhichoperatesonLTEdownlinkBand42(3.
4-3.
6GHz)andBand43(3.
6-3.
8GHz).
Thedeviceisasingle-stage,matched,powerDohertyamplifiertransistor.
QPD3640candeliverP4dBof389Wat+50Voperation.
LeadfreeandRoHScompliant.
FunctionalBlockDiagramApplicationsWCDMA/LTEMacrocellBaseStationAsymmetricDohertyApplicationsOrderingInformationPartNumberDescriptionQPD3640SRShortReel–100PiecesQPD3640TR1313"Reel–2500PiecesQPD3640EVB023.
5–3.
7GHzDohertyEval.
BoardQPD3640EVB033.
4–3.
6GHzDohertyEval.
BoardQPD3640EVB043.
6–3.
8GHzDohertyEval.
BoardQPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
2of9www.
qorvo.
comRecommendedOperatingConditionsParameterMinTypMaxUnitCarrierGateVoltage(VG1)2.
8VPeakingGateVoltage(VG2)5.
5VDrainVoltage(VD1,2)+48VCarrierQuiescentCurrent(IDQ1)342mAElectricalspecificationsaremeasuredatspecifiedtestconditions.
Specificationsarenotguaranteedoverallrecommendedoperatingconditions.
AbsoluteMaximumRatingsParameterRatingBreakdownVoltage(BVDG)+165VGateVoltageRange(VG1,2)7to+2VDrainVoltage(VD1,2)+55VPeakRFInputPower+42dBmVSWRMismatch,P1dBPulse(10%DutyCycle,100sWidth),T=+25°C10:1StorageTemperature65to+150°CExceedinganyoneoracombinationoftheAbsoluteMaximumRatingconditionsmaycausepermanentdamagetothedevice.
ExtendedapplicationofAbsoluteMaximumRatingconditionstothedevicemayreducedevicereliability.
ElectricalSpecificationsParameterConditionsMinTypMaxUnitsOperationalFrequencyRange36003800MHzCarrierQuiescentDrainCurrent342mALinearDohertyGainP4dB15.
6dBDohertyOutputPowerP4dB55.
9dBmDohertyDrainEfficiencyP4dB57.
4%CarrierAmplifierGateLeakage27.
5mAPeakingAmplifierGateLeakage48.
0mATestconditionsunlessotherwisenoted:VD1,2=+50V,IDQ1=342mA,VG2=5.
5V,T=+25°C,Pulsed(10%DutyCycle,100sWidth)at3750MHzonareferencedesignfixture.
ThermalInformationParameterConditionsValuesUnitsThermalResistance,PeakIRSurfaceTemperatureatAveragePower(θJC)TCASE=+105°C,TCH=144°CCW:PDISS=36.
9W,POUT=42.
2W1.
1°C/WNotes:1.
BasedonexpectedcarrieramplifierefficiencyofDoherty.
2.
POUTassumes25%peakingamplifiercontributionoftotalaverageDohertyratedpower.
3.
Thermalresistanceismeasuredtopackagebackside.
4.
Refertothefollowingdocument:GaNDeviceChannelTemperature,ThermalResistance,andReliabilityEstimatesQPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
3of9www.
qorvo.
comCarrierAmplifierPower-MatchedLoadPullPerformanceFrequency(MHz)SourceImpedance()LoadImpedance()P3dB(dBm)DrainEfficiency(%)G3dB(dB)34005.
42–j18.
785.
79–j1.
6653.
560.
816.
236008.
92–j22.
513.
84–j2.
2953.
559.
716.
9380013.
12–j9.
383.
06–j4.
5353.
257.
115.
7Testconditionsunlessotherwisenoted:VD1=+50V,IDQ1=342mA,T=+25°C,Pulsed(10%DutyCycle,100sWidth),P3dB.
CarrierAmplifierEfficiency-MatchedLoadPullPerformanceFrequency(MHz)SourceImpedance()LoadImpedance()P3dB(dBm)DrainEfficiency(%)G3dB(dB)34005.
42–j18.
7810.
84–j7.
8651.
673.
118.
636008.
92–j22.
5111.
09–j1.
5451.
472.
720.
1380013.
12–j9.
385.
40–j2.
1252.
168.
118.
2Testconditionsunlessotherwisenoted:VD1=+50V,IDQ1=342mA,T=+25°C,Pulsed(10%DutyCycle,100sWidth),P3dB.
PeakingAmplifierPower-MatchedLoadPullPerformanceFrequency(MHz)SourceImpedance()LoadImpedance()P1dB(dBm)DrainEfficiency(%)G1dB(dB)34003.
81–j15.
1511.
42–j7.
7855.
262.
215.
0360010.
48–j14.
419.
16–j4.
0255.
159.
914.
838005.
02–j4.
017.
68–j2.
6055.
258.
113.
9Testconditionsunlessotherwisenoted:VD2=+50V,VG2=4.
5V,T=+25°C,Pulsed(10%DutyCycle,100sWidth),P1dB.
PeakingAmplifierEfficiency-MatchedLoadPullPerformanceFrequency(MHz)SourceImpedance()LoadImpedance()P1dB(dBm)DrainEfficiency(%)G1dB(dB)34003.
81–j15.
156.
34–j13.
3553.
773.
916.
0360010.
48–j14.
419.
15–j11.
9953.
571.
715.
638005.
02–j4.
0113.
28–j9.
1953.
768.
214.
4Testconditionsunlessotherwisenoted:VD2=+50V,VG2=4.
5V,T=+25°C,Pulsed(10%DutyCycle,100sWidth),P1dB.
QPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
4of9www.
qorvo.
comCarrierAmplifierLoadPullPlotsTestconditionsunlessotherwisenoted:VD1=+50V,IDQ1=342mA,T=+25°C,Pulsed(10%DutyCycle,100sWidth),P3dB.
QPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
5of9www.
qorvo.
comPeakingAmplifierLoadPullPlotsTestconditionsunlessotherwisenoted:VD2=+50V,VG2=4.
5V,T=+25°C,Pulsed(10%DutyCycle,100sWidth),P1dB.
QPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
6of9www.
qorvo.
comPackageMarkingandDimensionsMarking:QorvoLogoPartNumber–QPD3640DateCode–YYWWLotCode–MXXXSerialNumber–ZZZNotes:UnlessOtherwiseSpecified;1.
Material:PackageBase:Ceramic/MetalPackageLid:Ceramic2.
PackageexposedmetalbaseandleadsareNiAuplated.
Authicknessisminimum60in.
3.
Partisepoxysealed.
4.
PartmeetsindustrystandardNI780footprint.
5.
Bodydimensionsdonotincludelidshiftorepoxyrunout,whichcanbeupto0.
020inchesperside.
6.
Alldimensionsareininches.
Anglesareindegrees.
7.
Generaltoleranceis±0.
005unlessotherwiseshown.
QPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
7of9www.
qorvo.
comPinConfigurationandDescriptionTopViewBottomViewPinNumberLabelDescription1RFIN1,VG1CarrierAmplifierRFInput,GateBias2RFIN2,VG2PeakingAmplifierRFInput,GateBias3RFOUT2,VD2PeakingAmplifierRFOutput,DrainBias4RFOUT1,VD1CarrierAmplifierRFOutput,DrainBias5(BacksidePaddle)RF/DCGNDRF/DCGroundDohertyBiasingProcedureBiasOnBiasOff1.
TurnONVG1andVG2to4V.
2.
TurnONVD1andVD2to+50V.
3.
AdjustVG2untilID2=600mA(VG2_SET).
4.
Subtract2.
5VfromVG2_SET(VG2=VG2_SET–2.
5V).
(Typically,VG2=5.
5V.
)5.
AdjustVG1untilID1=342mA.
(Typically,VG1=2.
8V.
)6.
TurnONRF.
1.
TurnOFFRF.
2.
AdjustVG1andVG2to5V.
3.
TurnOFFVD1andVD2.
4.
Waittwo(2)secondstoallowdraincapacitorchargetodissipate.
5.
TurnOFFVG1andVG2.
QPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
8of9www.
qorvo.
comRecommendedSolderTemperatureProfileQPD3640150W/300W,48V,3.
4–3.
8GHz,AsymmetricDohertyDataSheet,October14,2019|Subjecttochangewithoutnotice.
9of9www.
qorvo.
comHandlingPrecautionsParameterRatingStandardCaution!
ESD-SensitiveDeviceESD–HumanBodyModel(HBM)Class1B(500V)ANSI/ESDA/JEDECStandardJS-001ESD–ChargedDeviceModel(CDM)ClassC3(1000V)ANSI/ESDA/JEDECStandardJS-002MSL–MoistureSensitivityLevelLevel3IPC/JEDECStandardJ-STD-020SolderabilityCompatiblewithlead-free(260°Cmaximumreflowtemperature)solderingprocesses.
Theuseofno-cleansoldertoavoidwashingaftersolderingisrecommended.
PackageleadplatingisNiAu.
Authicknessisminimum60in.
RoHSComplianceThispartiscompliantwith2011/65/EURoHSdirective(RestrictionsontheUseofCertainHazardousSubstancesinElectricalandElectronicEquipment)asamendedbyDirective2015/863/EU.
Thisproductalsohasthefollowingattributes:LeadFreeAntimonyFreeTBBP-A(C15H12Br402)FreePFOSFreeSVHCFreeContactInformationForthelatestspecifications,additionalproductinformation,worldwidesalesanddistributionlocations:Web:www.
qorvo.
comTel:1-844-890-8163Email:customer.
support@qorvo.
comImportantNoticeTheinformationcontainedhereinisbelievedtobereliable;however,Qorvomakesnowarrantiesregardingtheinformationcontainedhereinandassumesnoresponsibilityorliabilitywhatsoeverfortheuseoftheinformationcontainedherein.
Allinformationcontainedhereinissubjecttochangewithoutnotice.
CustomersshouldobtainandverifythelatestrelevantinformationbeforeplacingordersforQorvoproducts.
Theinformationcontainedhereinoranyuseofsuchinformationdoesnotgrant,explicitlyorimplicitly,toanypartyanypatentrights,licenses,oranyotherintellectualpropertyrights,whetherwithregardtosuchinformationitselforanythingdescribedbysuchinformation.
THISINFORMATIONDOESNOTCONSTITUTEAWARRANTYWITHRESPECTTOTHEPRODUCTSDESCRIBEDHEREIN,ANDQORVOHEREBYDISCLAIMSANYANDALLWARRANTIESWITHRESPECTTOSUCHPRODUCTSWHETHEREXPRESSORIMPLIEDBYLAW,COURSEOFDEALING,COURSEOFPERFORMANCE,USAGEOFTRADEOROTHERWISE,INCLUDINGTHEIMPLIEDWARRANTIESOFMERCHANTABILITYANDFITNESSFORAPARTICULARPURPOSE.
Withoutlimitingthegeneralityoftheforegoing,Qorvoproductsarenotwarrantedorauthorizedforuseascriticalcomponentsinmedical,life-saving,orlife-sustainingapplications,orotherapplicationswhereafailurewouldreasonablybeexpectedtocauseseverepersonalinjuryordeath.
Copyright2019Qorvo,Inc.
|QorvoisaregisteredtrademarkofQorvo,Inc.
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美国Cera 2核4G 20元/45天 香港CN2 E5 20M物理机服务器 150元 日本CN2 E5 20M物理机服务器 150元 提速啦
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RAKsmart秒杀服务器$30/月,洛杉矶/圣何塞/香港/日本站群特价
RAKsmart发布了9月份优惠促销活动，从9月1日~9月30日期间，爆款美国服务器每日限量抢购最低$30.62-$46/月起，洛杉矶/圣何塞/香港/日本站群大量补货特价销售，美国1-10Gbps大带宽不限流量服务器低价热卖等。RAKsmart是一家华人运营的国外主机商，提供的产品包括独立服务器租用和VPS等，可选数据中心包括美国加州圣何塞、洛杉矶、中国香港、韩国、日本、荷兰等国家和地区数据中心(...
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