tFwww.seowhy.com

UCC27532-Q1www.
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comSLVSCE4A–DECEMBER2013–REVISEDJANUARY20142.
5-Aand5-A,35-VMAXVDDFETandIGBTSingle-GateDriver1FEATURESRenewableEnergyPowerConversionSiCFETConvertersQualifiedforAutomotiveApplicationsAEC-Q100QualifiedWiththeFollowingDESCRIPTIONResults:TheUCC27532-Q1deviceisasingle-channelhigh-–DeviceTemperatureGrade1speedgatedrivercapableofeffectivelydriving–DeviceHBMESDClassificationLevelH2MOSFETandIGBTpowerswitchesbyupto2.
5-Asourceand5-Asink(asymmetricaldrive)peak–DeviceCDMESDClassificationLevelC4Bcurrent.
StrongsinkcapabilityinasymmetricaldriveLow-CostGateDriver(offeringoptimalboostsimmunityagainstparasiticMillerturnoneffect.
solutionfordrivingFETandIGBTs)TheUCC27532-Q1devicealsofeaturesasplit-outputSuperiorReplacementtoDiscreteTransistorconfigurationwherethegate-drivecurrentissourcedPairDrive(providingeasyinterfacewiththroughtheOUTHpinandsunkthroughtheOUTLcontroller)pin.
ThispinarrangementallowstheusertoapplyindependentturnonandturnoffresistorstotheOUTHCMOSCompatibleInput-LogicThresholdandOUTLpinsrespectivelyandeasilycontrolthe(becomesfixedatVDDabove18V)switchingslewrates.
SplitOutputsAllowSeparateTurnonandThedriverhasrail-to-raildrivecapabilityandanTurnoffTuningextremely-smallpropagationdelayof17ns(typically).
EnablewithFixedTTLCompatibleThresholdTheUCC27532-Q1devicehasaCMOS-inputHigh2.
5-ASourceand5-ASinkPeak-Drivethreshold-centered55%riseand45%fallinregardsCurrentsat18-VVDDofVDDatVDDbeloworequal18V.
WhenVDDisWideVDDRangeFrom10Vupto35Vabove18V,theinputthresholdremainsfixedatthemaximumlevel.
InputPinsCapableofWithstandingupto–5-VDCBelowGroundThedriverhasanENpinwithafixedTTL-compatibleOutputHeldLowWhenInputsareFloatingorthreshold.
ENisinternallypulledup;pullingENlowDuringVDDUVLOdisablesdriver,whileleavingitopenprovidesnormaloperation.
TheENpincanbeusedasanadditionalFastPropagationDelays(17-nstypical)inputwiththesameperformanceastheINpin.
FastRiseandFallTimesLeavingtheinputpinofdriveropenholdstheoutput(15-nsand7-nstypicalwith1800-pFLoad)low.
ThelogicbehaviorofthedriverisshownintheUndervoltageLockout(UVLO)TimingDiagram,Input/OutputLogicTruthTable,andUsedasaHigh-SideorLow-SideDriver(ifTypicalApplicationDiagrams.
designedwithproperbiasandsignalisolation)InternalcircuitryontheVDDpinprovidesanLow-CostSpace-Saving6-PinDBV(SOT-23)undervoltage-lockoutfunctionthatholdstheoutputPackagelowuntiltheVDDsupplyvoltageiswithinoperatingOperatingTemperatureRangeof–40°Ctorange.
140°CTheUCC27532-Q1driverisofferedina6-pinstandardSOT-23(DBV)package.
ThedeviceAPPLICATIONSoperatesoverawidetemperaturerangeof–40°Cto140°C.
AutomotiveSwitch-ModePowerSuppliesDC-to-DCConvertersSolarInverters,MotorControl,UPSHEVandEVChargersHomeAppliances1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2013–2014,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
Productionprocessingdoesnotnecessarilyincludetestingofallparameters.
UCC27532-Q1SLVSCE4A–DECEMBER2013–REVISEDJANUARY2014www.
ti.
comThisintegratedcircuitcanbedamagedbyESD.
TexasInstrumentsrecommendsthatallintegratedcircuitsbehandledwithappropriateprecautions.
Failuretoobserveproperhandlingandinstallationprocedurescancausedamage.
ESDdamagecanrangefromsubtleperformancedegradationtocompletedevicefailure.
Precisionintegratedcircuitsmaybemoresusceptibletodamagebecauseverysmallparametricchangescouldcausethedevicenottomeetitspublishedspecifications.
ABSOLUTEMAXIMUMRATINGS(1)(2)(3)overoperatingfree-airtemperaturerange(unlessotherwisenoted)MINMAXUNITSupplyvoltagerangeVDD–0.
335ContinuousOUTH,OUTL–0.
3VDD+0.
3VPulseOUTH,OUTL(200ns)–2VDD+0.
3ContinuousIN,EN–527VPulseIN,EN(1.
5s)–6.
527Humanbodymodel(HBM)2kVElectrostaticdischarge(ESD)ratingChargeddevicemodel(CDM)750VOperatingvirtualjunctiontemperaturerange,TJ–40150Storagetemperaturerange,Tstg–65150°CSoldering,10seconds300LeadtemperatureReflow260(1)Stressesbeyondthoselistedunderabsolutemaximumratingsmaycausepermanentdamagetothedevice.
Thesearestressratingsonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderrecommendedoperatingconditionsisnotimplied.
Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
(2)AllvoltagesarewithrespecttoGNDunlessotherwisenoted.
Currentsarepositiveinto,negativeoutofthespecifiedterminal.
SeePackagingSectionofthedatasheetforthermallimitationsandconsiderationsofpackages.
(3)Thesedevicesaresensitivetoelectrostaticdischarge;followproperdevicehandlingprocedures.
THERMALINFORMATIONUCC27532-Q1THERMALMETRIC(1)DBVUNIT6PINSθJAJunction-to-ambientthermalresistance178.
3θJCtopJunction-to-case(top)thermalresistance109.
7θJBJunction-to-boardthermalresistance28.
3°C/WψJTJunction-to-topcharacterizationparameter14.
7ψJBJunction-to-boardcharacterizationparameter27.
8θJCbotJunction-to-case(bottom)thermalresistancen/a(1)Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953.
RECOMMENDEDOPERATINGCONDITIONSoveroperatingfree-airtemperaturerange(unlessotherwisenoted)MINTYPMAXUNITSupplyvoltagerange,VDD101832VOperatingjunctiontemperaturerange–40140°CInputvoltage,IN–525VEnable,EN–5252SubmitDocumentationFeedbackCopyright2013–2014,TexasInstrumentsIncorporatedProductFolderLinks:UCC27532-Q1UCC27532-Q1www.
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comSLVSCE4A–DECEMBER2013–REVISEDJANUARY2014ELECTRICALCHARACTERISTICSUnlessotherwisenoted,VDD=18V,TA=TJ=–40°Cto140°C,INswitchingfrom0VtoVDD,1-FcapacitorfromVDDtoGND,=100kHz.
Currentsarepositiveintoandnegativeoutofthespecifiedterminal.
OUTHandOUTLaretiedtogether.
Typicalconditionspecificationsareat25°C.
PARAMETERCONDITIONMINTYPMAXUNITBiasCurrentsIN,EN=VDD100240350IDDoffStartupcurrent,VDD=7.
0μAIN,EN=GND100250350UnderVoltageLockout(UVLO)VONSupplystartthreshold88.
99.
8MinimumoperatingvoltageafterVOFF7.
38.
29.
1VsupplystartVDD_HSupplyvoltagehysteresis0.
7Input(IN)VIN_HInputsignalhighthresholdOutputhigh8.
89.
410VIN_LInputsignallowthresholdOutputlow6.
77.
37.
9VVIN_HYSInputsignalhysteresis2.
1Enable(EN)VEN_HEnablesignalhighthresholdOutputhigh1.
71.
92.
1VEN_LEnablesignallowthresholdOutputlow0.
811.
2VVEN_HYEnablesignalhysteresis0.
9SOutputs(OUTH/OUTL)Sourcepeakcurrent(OUTH)/sinkISRC/SNKCLOAD=0.
22F,=1kHz–2.
5/+5Apeakcurrent(OUTL)(1)VOHOUTH,highvoltageIOUTH=–10mAVDD–0.
2VDD–0.
12VDD–0.
07VVOLOUTL,lowvoltageIOUTL=100mA0.
0650.
125TA=25°C,IOUT=-10mA111212.
5ROHOUTH,pull-upresistance(2)TA=–40°Cto140°C,IOUT=-10mA71220TA=25°C,IOUT=100mA0.
450.
650.
85ROLOUTL,pull-downresistanceTA=–40°Cto140°C,IOUT=100mA0.
30.
651.
25SwitchingTime(1)(3)tRRisetimeCLOAD=1.
8nF15tFFalltimeCLOAD=1.
8nF7nstD1TurnonpropagationdelayCLOAD=1.
8nF,IN=0VtoVDD1726tD2TurnoffpropagationdelayCLOAD=1.
8nF,IN=VDDto0V1726(1)Ensuredbydesignandtestedduringcharacterization.
Notproductiontested.
(2)OutputpullupresistancehereisaDCmeasurementthatmeasuresresistanceofPMOSstructureonly,notN-channelstructure.
Theeffectivedynamicpull-upresistanceis3*ROL.
(3)SeeFigure1.
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(OUTHtiedtoOUTL)Input=IN,Output=OUT(EN=VDD)orInput=EN,Output=OUT(IN=VDD)4SubmitDocumentationFeedbackCopyright2013–2014,TexasInstrumentsIncorporatedProductFolderLinks:UCC27532-Q1UCC27532-Q1www.
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comSLVSCE4A–DECEMBER2013–REVISEDJANUARY2014DEVICEINFORMATIONSOT-23PACKAGE6-PINDBV(TOPVIEW)TERMINALFUNCTIONSTERMINALI/OFUNCTIONNAMEPINNUMBEREnableEN1I(PullENtoGNDinordertodisableoutput,pullithighorleaveitopentoenabletheoutput)GND4–Ground(allsignalsarereferencedtothisnode)IN2IDrivernon-invertinginput(CMOSthreshold)OUTL5O5-AsinkcurrentoutputofdriverOUTH6O2.
5-AsourcecurrentoutputofdriverVDD3IBiassupplyinputINPUT/OUTPUTLOGICTRUTHTABLEOUTINPINENPINOUTHPINOUTLPIN(OUTHandOUTLpinstiedtogether)LLHigh-impedanceLLLHHigh-impedanceLLHLHigh-impedanceLLHHHHigh-impedanceHBlockDiagram(ENPullupResistancetoVref=500k,Vref=5.
8V,InPulldownResistancetoGND=230k)Copyright2013–2014,TexasInstrumentsIncorporatedSubmitDocumentationFeedback5ProductFolderLinks:UCC27532-Q1UCC27532-Q1SLVSCE4A–DECEMBER2013–REVISEDJANUARY2014www.
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comTypicalApplicationDiagramsFigure2.
DrivingIGBTWithoutNegativeBiasFigure3.
DrivingIGBTWith13-VNegativeTurnoffBias6SubmitDocumentationFeedbackCopyright2013–2014,TexasInstrumentsIncorporatedProductFolderLinks:UCC27532-Q1UCC27532-Q1www.
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UsingUCC27532-Q1DriversinanInverterCopyright2013–2014,TexasInstrumentsIncorporatedSubmitDocumentationFeedback7ProductFolderLinks:UCC27532-Q1UCC27532-Q1SLVSCE4A–DECEMBER2013–REVISEDJANUARY2014www.
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comTYPICALCHARACTERISTICSRISETIMEFALLTIMEvsvsSUPPLYVOLTAGESUPPLYVOLTAGEFigure5.
Figure6.
PROPAGATIONDELAYOPERATINGSUPPLYCURRENTvsvsSUPPLYVOLTAGEFREQUENCYFigure7.
Figure8.
8SubmitDocumentationFeedbackCopyright2013–2014,TexasInstrumentsIncorporatedProductFolderLinks:UCC27532-Q1UCC27532-Q1www.
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comSLVSCE4A–DECEMBER2013–REVISEDJANUARY2014TYPICALCHARACTERISTICS(continued)START-UPCURRENTOPERATINGSUPPLYCURRENTvsvsTEMPERATURETEMPERATURE(OUTPUTSWITCHING)Figure9.
Figure10.
UVLOTHRESHOLDVOLTAGEINPUTTHRESHOLDvsvsTEMPERATURETEMPERATUREFigure11.
Figure12.
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comTYPICALCHARACTERISTICS(continued)ENABLETHRESHOLDOUTPUTPULLUPRESISTANCEvsvsTEMPERATURETEMPERATUREFigure13.
Figure14.
OUTPUTPULLDOWNRESISTANCEOPERATINGSUPPLYCURRENTvsvsTEMPERATURETEMPERATURE(OUTPUTINDCONANDOFFCONDITION)Figure15.
Figure16.
10SubmitDocumentationFeedbackCopyright2013–2014,TexasInstrumentsIncorporatedProductFolderLinks:UCC27532-Q1UCC27532-Q1www.
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comSLVSCE4A–DECEMBER2013–REVISEDJANUARY2014TYPICALCHARACTERISTICS(continued)INPUT-TO-OUTPUTPROPAGATIONDELAYRISETIMEvsvsTEMPERATURETEMPERATUREFigure17.
Figure18.
FALLTIMEOPERATINGSUPPLYCURRENTvsvsTEMPERATURESUPPLYVOLTAGE(OUTPUTSWITCHING)Figure19.
Figure20.
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comTYPICALCHARACTERISTICS(continued)RISETIMEFALLTIMEvsvsSUPPLYVOLTAGESUPPLYVOLTAGEFigure21.
Figure22.
12SubmitDocumentationFeedbackCopyright2013–2014,TexasInstrumentsIncorporatedProductFolderLinks:UCC27532-Q1UCC27532-Q1www.
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comSLVSCE4A–DECEMBER2013–REVISEDJANUARY2014APPLICATIONINFORMATIONHigh-currentgatedriverdevicesarerequiredinswitchingpowerapplicationsforavarietyofreasons.
Inordertoenablefastswitchingofpowerdevicesandreduceassociatedswitchingpowerlosses,apowerfulgatedrivercanbeusedbetweenthePWMoutputofcontrollersorsignalisolationdevicesandthegatesofthepowersemiconductordevices.
Further,gatedriversareindispensablewhenhavingthePWMcontrollerdirectlydrivethegatesoftheswitchingdevicesisnotfeasible.
ThissituationisoftenencounteredbecausethePWMsignalfromadigitalcontrollerorsignalisolationdeviceisoftena3.
3-Vor5-Vlogicsignalwhichisnotcapableofeffectivelyturningonapowerswitch.
Alevelshiftingcircuitryisrequiredtoboostthelogic-levelsignaltothegate-drivevoltageinordertofullyturnonthepowerdeviceandminimizeconductionlosses.
TraditionalbufferdrivecircuitsbasedonNPNandPNPbipolar(orP-channelandN-channelMOSFET)transistorsintotem-polearrangement,beingemitter-followerconfigurations,proveinadequateforthisfunctionbecausethesecircuitslacklevel-shiftingcapabilityandlow-drivevoltageprotection.
Gatedriverseffectivelycombineboththelevel-shifting,bufferdrive,andUVLOfunctions.
Gatedrivershaveotherusessuchasminimizingtheeffectofswitchingnoisebylocatingthehigh-currentdriverphysicallyclosetothepowerswitch,drivinggate-drivetransformers,controllingfloatingpowerdevicegates,andreducingpowerdissipationandthermalstressincontrollersbymovinggatechargepowerlossesintoitself.
TheUCC27532-Q1deviceisveryflexibleinthisrolewithastrongcurrent-drivecapabilityandwidesupply-voltagerangeupto35V.
Thesefeaturesallowthedrivertobeusedin12-VSiMOSFETapplications,20-Vand–5-V(relativetosource)SiCFETapplications,15-Vand–15-V(relativetoemitter)IGBTapplications,andmanyothers.
Asasingle-channeldriver,theUCC27532-Q1devicecanbeusedasalow-sideorhigh-sidedriver.
Tousethedeviceasalow-sidedriver,theswitchgroundistypicallythesystemgroundsoitcanbeconnecteddirectlytothegatedriver.
Touseasahigh-sidedriverwithafloatingreturnnode,however,signalisolationisrequiredfromthecontrolleraswellasanisolatedbiastotheUCC27532-Q1device.
Alternatively,inahigh-sidedriveconfigurationtheUCC27532-Q1devicecanbetieddirectlytothecontrollersignalandbiasedwithanon-isolatedsupply.
However,inthisconfigurationtheoutputsoftheUCC27532-Q1devicemustdriveapulsetransformerwhichthendrivesthepower-switchtoworkproperlywiththefloatingsourceandemitterofthepowerswitch.
Further,havingtheabilitytocontrolturnonandturnoffspeedsindependentlywithboththeOUTHandOUTLpinsensuresoptimumefficiencywhilemaintainingsystemreliability.
Theserequirementscoupledwiththeneedforlowpropagationdelaysandavailabilityincompact,low-inductancepackageswithgoodthermalcapabilitymakesgatedriverdevicessuchastheUCC27532-Q1deviceextremelyimportantcomponentsinswitchingpowercombiningbenefitsofhigh-performance,lowcost,componentcountandboard-spacereduction,andsimplifiedsystemdesign.
Table1.
UCC27532-Q1FeaturesandBenefitsFEATUREBENEFITHighsourceandsinkcurrentcapability,2.
5AandHighcurrentcapabilityoffersflexibilityinemployingUCC27532-Q1devicedeviceto5A(asymmetrical).
driveavarietyofpowerswitchingdevicesatvaryingspeeds.
Low17ns(typ)propagationdelay.
Extremelylowpulsetransmissiondistortion.
WideVDDoperatingrangeof10Vto32V.
Flexibilityinsystemdesign.
Canbeusedinsplit-railsystemssuchasdrivingIGBTswithbothpositiveandnegative(relativetoEmitter)supplies.
OptimalformanySiCFETs.
VDDUVLOprotection.
OutputsareheldLowinUVLOcondition,whichensurespredictable,glitch-freeoperationatpower-upandpower-down.
HighUVLOof8.
9Vtypicalensuresthatpowerswitchisnotoninhigh-impedancestatewhichcouldresultinhighpowerdissipationorevenfailures.
Outputsheldlowwheninputpin(IN)infloatingSafetyfeature,especiallyusefulinpassingabnormalconditiontestsduringsafetycondition.
certificationSplitoutputstructure(OUTH,OUTL).
Allowsindependentoptimizationofturnonandturnoffspeedsusingseriesgateresistors.
Strongsinkcurrent(5A)andlowpulldownHighimmunitytohighdV/dtMillerturnonevents.
impedance(0.
65Ω).
CMOScompatibleinputthresholdlogicwithwideExcellentnoiseimmunity.
2.
1-Vhysteresis.
Inputcapableofwithstanding–6.
5V.
Enhancedsignalreliabilityinnoisyenvironmentsthatexperiencegroundbounceonthegatedriver.
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comVDDUnderVoltageLockoutTheUCC27532-Q1devicehasaninternalundervoltage-lockout(UVLO)protectionfeatureontheVDD-pinsupply-circuitblocks.
Toensureacceptablepowerdissipationinthepowerswitch,thisUVLOpreventstheoperationofthegatedriveratlowsupplyvoltages.
WheneverthedriverisinUVLOcondition(whentheVDDvoltagelessthanVONduringpower-upandwhentheVDDvoltageislessthanVOFFduringpowerdown),thiscircuitholdsalloutputsLOW,regardlessofthestatusoftheinputs.
TheUVLOistypically8.
9Vwitha700-mVtypicalhysteresis.
Thishysteresishelpspreventchatterwhenlow-VDDsupplyvoltageshavenoisefromthepowersupply.
ThishysteresisalsopreventschatterwhentherearedroopsintheVDDbiasvoltagewhenthesystemcommencesswitchingandthereisasuddenincreaseinIDD.
Thecapabilitytooperateatvoltagelevelssuchas10Vto32VprovidesflexibilitytodriveSiMOSFETs,IGBTs,andemergingSiCFETs.
Figure23.
PowerUpInputStageTheinputpinofUCC27532-Q1deviceisbasedonastandardCMOS-compatibleinput-thresholdlogicthatisdependentontheVDDsupplyvoltage.
Theinputthresholdisapproximately55%ofVDDforriseand45%ofVDDforfall.
With18-VVDD,thetypicalhighthresholdis9.
4Vandthetypicallowthresholdis7.
3V.
The2.
1-VhysteresisoffersexcellentnoiseimmunitycomparedtotraditionalTTLlogicimplementationswherethehysteresisistypicallylessthan0.
5V.
ForproperoperationusingCMOSinput,theinputsignallevelmustbeatavoltageequaltoVDD.
UsinganinputsignalslightlylargerthanthethresholdbutlessthanVDDfortheCMOSinputcanresultinslowerpropagationdelayfrominputtooutput(forexample).
Thisdevicealsofeaturestightcontroloftheinput-pinthresholdvoltagelevelswhicheasessystemdesignconsiderationsandensuresstableoperationacrosstemperature.
Theverylowinputcapacitance,typically20pF,onthesepinsreducesloadingandincreasesswitchingspeed.
Thedevicefeaturesanimportantsafetyfunctionwheretheoutputisheldinthelowstatewhenevertheinputpinisinafloatingcondition.
ThisfunctionisachievedusingGNDpulldownresistorsonthenon-invertinginputpin(INpin),asshownintheBlockDiagram.
Theinputstageofthedriverisbestdrivenbyasignalwithashortriseorfalltime.
Cautionmustbeexercisedwheneverthedriverisusedwithslowlyvaryinginputsignals,especiallyinsituationswherethedeviceislocatedinaseparatedaughterboardorPCBlayouthaslonginput-connectiontraces:HighdI/dtcurrentfromthedriveroutputcoupledwithboardlayoutparasiticscancausegroundbounce.
BecausethedevicefeaturesjustoneGNDpinwhichcanbereferencedtothepowerground,thiscaninterferewiththedifferentialvoltagebetweeninputpinsandGNDandcantriggeranunintendedchangeofoutputstate.
Becauseofthefast17-nspropagationdelay,thiscanultimatelyresultinhigh-frequencyoscillations,whichincreasespowerdissipationandposesariskofdamage2.
1-Vinputthresholdhysteresisboostsnoiseimmunitycomparedtomostotherindustrystandarddrivers.
14SubmitDocumentationFeedbackCopyright2013–2014,TexasInstrumentsIncorporatedProductFolderLinks:UCC27532-Q1UCC27532-Q1www.
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comSLVSCE4A–DECEMBER2013–REVISEDJANUARY2014IflimitingtheriseorfalltimestothepowerdeviceinordertoreduceEMIisnecessary,thenanexternalresistanceishighlyrecommendedbetweentheoutputofthedriverandthepowerdeviceinsteadofaddingdelaysontheinputsignal.
Thisexternalresistorhastheadditionalbenefitofreducingpartofthegate-charge-relatedpowerdissipationinthegate-driverdevicepackageandtransferringthedissipationintotheexternalresistoritself.
EnableFunctionTheenable(EN)pinoftheUCC27532-Q1devicehasaninternalpullupresistortoaninternalreferencevoltage.
Therefore,leavingtheENpinfloatingturnsonthedriverandallowsittosendoutputsignalsproperly.
Ifdesired,theENpincanalsobedrivenbylow-voltagelogictoenableanddisablethedriver.
OutputStageFigure24showstheoutputstageoftheUCC27532-Q1device.
TheUCC27532-Q1devicefeaturesauniquearchitectureontheoutputstagewhichdeliversthehighestpeak-sourcecurrentwhenitismostneededduringtheMillerplateauregionofthepowerswitchturnontransition(whenthepowerswitchdrainorcollectorvoltageexperiencesdV/dt).
ThedeviceoutputstagefeaturesahybridpullupstructureusingaparallelarrangementofN-ChannelandP-ChannelMOSFETdevices.
ByturningontheN-ChannelMOSFETduringanarrowinstantwhentheoutputchangesstatefromlowtohigh,thegatedriverdeviceisabletodeliverabriefboostinthepeaksourcingcurrentenablingfastturnon.
Figure24.
UCC27532-Q1Gate-DriverOutputStageTheROHparameter(seeELECTRICALCHARACTERISTICS)isaDCmeasurementandisrepresentativeoftheon-resistanceoftheP-ChanneldeviceonlybecausetheN-Channeldeviceisturned-ononlyduringoutputchangeofstatefromlowtohigh.
ThustheeffectiveresistanceofthehybridpullupstageismuchlowerthanwhatisrepresentedbyROHparameter.
ThepulldownstructureiscomposedofaN-ChannelMOSFETonly.
TheROLparameter(seeELECTRICALCHARACTERISTICS),whichisalsoaDCmeasurement,isrepresentativeoftrueimpedanceofthepulldownstageinthedevice.
InUCC27532-Q1device,theeffectiveresistanceofthehybridpullupstructureisapproximately3*ROL.
TheUCC27532-Q1deviceiscapableofdelivering2.
5-Asource,5-ASink(asymmetricaldrive)atVDD=18V.
StrongsinkcapabilityinasymmetricaldriveresultsinaverylowpulldownimpedanceinthedriveroutputstagewhichboostsimmunityagainsttheparasiticMillerturnon(highslew-ratedV/dtturnon)effectthatisseeninbothIGBTandFETpowerswitches.
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comAnexampleofasituationwhereMillerturnonisaconcernissynchronousrectification(SR).
InSRapplication,thedV/dtoccursonMOSFETdrainwhentheMOSFETisalreadyheldintheoffstatebythegatedriver.
ThecurrentchargingtheCGDMillercapacitanceduringthishighdV/dtisshuntedbythepulldownstageofthedriver.
IfthepulldownimpedanceisnotlowenoughthenavoltagespikecanresultintheVGSoftheMOSFET,whichcanresultinspuriousturnon.
ThisphenomenonisillustratedinFigure25.
Figure25.
LowPulldownImpedanceintheUCC27532-Q1Device(OutputStageMitigatesMillerTurnonEffect)ThedriveroutputvoltageswingsbetweenVDDandGNDprovidingrail-to-railoperationbecauseoftheMOSoutputstagewhichdeliversverylowdropout.
ThepresenceoftheMOSFETbodydiodesalsoofferslowimpedancetoswitchingovershootsandundershootswhichmeansthatinmanycases,externalSchottkydiodeclampscanbeeliminated.
PowerDissipationPowerdissipationofthegatedriverhastwoportionsasshowninEquation1.
(1)TheDCportionofthepowerdissipationisshowninEquation2.
whereIQisthequiescentcurrentforthedriver(2)Thequiescentcurrentisthecurrentconsumedbythedevicetobiasallinternalcircuitssuchasinputstage,referencevoltage,logiccircuits,protections,andothers,aswellasanycurrentassociatedwithswitchingofinternaldeviceswhenthedriveroutputchangesstate(suchascharginganddischargingofparasiticcapacitancesandparasiticshoot-through).
TheUCC27532-Q1devicefeaturesvery-lowquiescentcurrents(lessthan1mA)andcontainsinternallogictoeliminateanyshoot-throughintheoutputdriverstage.
ThustheeffectofthePDConthetotalpowerdissipationwithinthegatedrivercanbeassumedasinsignificant.
Inpractice,thisisthepowerconsumedbythedriverwhentheoutputisdisconnectedfromthegateofpowerswitch.
Thepowerdissipatedinthegatedriverpackageduringswitching(PSW)isbasedonthefollowingfactors:Gatechargerequiredofthepowerdevice(typicallyafunctionofthedrivevoltageVG,whichisveryclosetoinputbiassupplyvoltageVDDduetolowVOHdrop-out)SwitchingfrequencyUseofexternalgateresistors16SubmitDocumentationFeedbackCopyright2013–2014,TexasInstrumentsIncorporatedProductFolderLinks:UCC27532-Q1UCC27532-Q1www.
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comSLVSCE4A–DECEMBER2013–REVISEDJANUARY2014Whenadriverdeviceistestedwithadiscrete,capacitiveload,calculatingthepowerthatisrequiredfromthebiassupplyissimple.
Equation3calculatestheenergythatmustbetransferredfromthebiassupplytochargethecapacitor.
whereCLOADisloadcapacitorVDDisbiasvoltagefeedingthedriver(3)Whenthecapacitorisdischargedanequalamountofenergyisdissipated.
DuringturnofftheenergystoredincapacitorisfullydissipatedindrivecircuitwhichleadstoatotalpowerlossduringswitchingcyclegivenbyEquation4.
whereSWistheswitchingfrequency(4)TheswitchingloadpresentedbyapowerFETandIGBTcanbeconvertedtoanequivalentcapacitancebyexaminingthegatechargerequiredtoswitchthedevice.
ThisgatechargeincludestheeffectsoftheinputcapacitanceplustheaddedchargerequiredtoswingthedrainvoltageofthepowerdeviceasitswitchesbetweentheONandOFFstates.
Mostmanufacturersprovidespecificationsoftypicalandmaximumgatecharge,innC,toswitchthedeviceunderspecifiedconditions.
UsingthegatechargeQg,thepowerthatmustbedissipatedwhenchargingacapacitorisdeterminedbyusingtheequivalence,Qg=CLOADVDD,whichresultsinEquation5forpower:(5)Thispower,PG,isdissipatedintheresistiveelementsofthecircuitwhentheMOSFETandIGBTisturningonorturningoff.
Halfofthetotalpowerisdissipatedwhentheloadcapacitorischargedduringturnon,andtheotherhalfisdissipatedwhentheloadcapacitorisdischargedduringturnoff.
WhennoexternalgateresistorisemployedbetweenthedriverandMOSFETandIGBT,thispoweriscompletelydissipatedinsidethedriverpackage.
Withtheuseofexternalgatedriveresistors,thepowerdissipationissharedbetweentheinternalresistanceofdriverandexternalgateresistorinaccordancetotheratiooftheresistances(morepowerisdissipatedinthehigherresistancecomponent).
Basedonthissimplifiedanalysis,thedriverpowerdissipationduringswitchingiscalculatedinEquation6.
whereROFF=ROLRON(effectiveresistanceofpull-upstructure)=3*ROL(6)Copyright2013–2014,TexasInstrumentsIncorporatedSubmitDocumentationFeedback17ProductFolderLinks:UCC27532-Q1UCC27532-Q1SLVSCE4A–DECEMBER2013–REVISEDJANUARY2014www.
ti.
comThermalInformationTheusefulrangeofadriverisgreatlyaffectedbythedrivepowerrequirementsoftheloadandthethermalcharacteristicsofthepackage.
Inorderforagatedrivertobeusefuloveraparticulartemperaturerangethepackagemustallowfortheefficientremovaloftheheatproducedwhilekeepingthejunctiontemperaturewithinratedlimits.
ThethermalmetricsforthedriverpackageissummarizedintheTHERMALINFORMATIONtable.
Fordetailedinformationregardingthethermalinformationtable,pleaseseeSPRA953.
PCBLayoutProperPCBlayoutisextremelyimportantinahigh-currentfast-switchingcircuitinordertoprovideappropriatedeviceoperationanddesignrobustness.
TheUCC27532-Q1gatedriverincorporatesshortpropagationdelaysandpowerfuloutputstagescapableofdeliveringlargecurrentpeakswithveryfastriseandfalltimesatthegateofpowerswitchtofacilitatevoltagetransitionsveryquickly.
AthigherVDDvoltages,thepeakcurrentcapabilityisevenhigher(2.
5-Aand5-ApeakcurrentisatVDD=18V).
Veryhighdi/dtcancauseunacceptableringingifthetracelengthsandimpedancesarenotwellcontrolled.
Thefollowingcircuitlayoutguidelinesarestronglyrecommendedwhendesigningwiththesehigh-speeddrivers.
Locatethedriverdeviceascloseaspossibletothepowerdeviceinordertominimizethelengthofhigh-currenttracesbetweenthedriveroutputpinsandthegateofthepower-switchdevice.
LocatetheVDDbypasscapacitorsbetweenVDDandGNDascloseaspossibletothedriverwithminimaltracelengthtoimprovethenoisefiltering.
ThesecapacitorssupporthighpeakcurrentbeingdrawnfromVDDduringturnonofpowerswitch.
Theuseoflow-inductanceSMDcomponentssuchaschipresistorsandchipcapacitorsishighlyrecommended.
Theturnonandturnoffcurrent-looppaths(driverdevice,powerswitch,andVDDbypasscapacitor)mustbeminimizedasmuchaspossibleinordertokeepthestrayinductancetoaminimum.
Highdi/dtisestablishedintheseloopsattwoinstances—duringturnonandturnofftransients—whichinducessignificantvoltagetransientsontheoutputpinsofthedriverdeviceandgateofthepowerswitch.
Whereverpossible,parallelthesourceandreturntracesofacurrentloopwhichtakesadvantageoffluxcancellationSeparatepowertracesandsignaltraces,suchasoutputandinputsignals.
Star-pointgroundingisagoodwaytominimizenoisecouplingfromonecurrentlooptoanother.
TheGNDofthedrivermustbeconnectedtotheothercircuitnodessuchassourceofpowerswitch,groundofPWMcontroller,andothersatone,singlepoint.
Theconnectedpathsmustbeasshortaspossibletoreduceinductanceandbeaswideaspossibletoreduceresistance.
Useagroundplanetoprovidenoiseshielding.
FastriseandfalltimesatOUTcancorrupttheinputsignalsduringtransition.
Thegroundplanemustnotbeaconductionpathforanycurrentloop.
Insteadthegroundplanemustbeconnectedtothestar-pointwithonesingletracetoestablishthegroundpotential.
Inadditiontonoiseshielding,thegroundplanecanhelpinpowerdissipationaswell.
18SubmitDocumentationFeedbackCopyright2013–2014,TexasInstrumentsIncorporatedProductFolderLinks:UCC27532-Q1UCC27532-Q1www.
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comSLVSCE4A–DECEMBER2013–REVISEDJANUARY2014REVISIONHISTORYChangesfromOriginal(December2013)toRevisionAPageChangeddocumentstatusfromProductPreviewtoProductionData1Copyright2013–2014,TexasInstrumentsIncorporatedSubmitDocumentationFeedback19ProductFolderLinks:UCC27532-Q1PACKAGEOPTIONADDENDUMwww.
ti.
com5-Feb-2014Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Lead/BallFinish(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesUCC27532QDBVRQ1ACTIVESOT-23DBV63000Green(RoHS&noSb/Br)CUNIPDAULevel-2-260C-1YEAR-40to140(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheckhttp://www.
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TBD:ThePb-Free/Greenconversionplanhasnotbeendefined.
Pb-Free(RoHS):TI'sterms"Lead-Free"or"Pb-Free"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirementsforall6substances,includingtherequirementthatleadnotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses.
Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieandpackage,or2)lead-baseddieadhesiveusedbetweenthedieandleadframe.
ThecomponentisotherwiseconsideredPb-Free(RoHScompatible)asdefinedabove.
Green(RoHS&noSb/Br):TIdefines"Green"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflameretardants(BrorSbdonotexceed0.
1%byweightinhomogeneousmaterial)(3)MSL,PeakTemp.
-TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclassifications,andpeaksoldertemperature.
(4)Theremaybeadditionalmarking,whichrelatestothelogo,thelottracecodeinformation,ortheenvironmentalcategoryonthedevice.
(5)MultipleDeviceMarkingswillbeinsideparentheses.
OnlyoneDeviceMarkingcontainedinparenthesesandseparatedbya"~"willappearonadevice.
IfalineisindentedthenitisacontinuationofthepreviouslineandthetwocombinedrepresenttheentireDeviceMarkingforthatdevice.
(6)Lead/BallFinish-OrderableDevicesmayhavemultiplematerialfinishoptions.
Finishoptionsareseparatedbyaverticalruledline.
Lead/BallFinishvaluesmaywraptotwolinesifthefinishvalueexceedsthemaximumcolumnwidth.
ImportantInformationandDisclaimer:TheinformationprovidedonthispagerepresentsTI'sknowledgeandbeliefasofthedatethatitisprovided.
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0180.
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