Basedhaomai88

Si88x2xDataSheetDualDigitalIsolatorswithDC-DCConverterTheSi88xxintegratesSiliconLabs'provendigitalisolatortechnologywithanon-chipisolateddc-dcconverterthatprovidesregulatedoutputvoltagesof3.
3or5.
0V(or>5Vwithexternalcomponents)atpeakoutputpowerlevelsofupto5W.
Thesedevicespro-videuptotwodigitalchannels.
Thedc-dcconverterhasuser-adjustablefrequencyforminimizingemissions,asoft-startfunctionforsafety,ashutdownoptionandloopcom-pensation.
Thedevicerequiresonlyminimalpassivecomponentsandaminiaturetrans-former.
Theultra-low-powerdigitalisolationchannelsoffersubstantialdatarate,propagationde-lay,sizeandreliabilityadvantagesoverlegacyisolationtechnologies.
Dataratesupto100Mbpsmaxaresupported,andalldevicesachievepropagationdelaysofonly23nsmax.
Orderingoptionsincludeachoiceofdc-dcconverterfeatures,isolationchannelconfigurationsandafail-safemode.
AllproductsarecertifiedbyUL,CSA,VDE,andCQC.
Applications:IndustrialautomationsystemsHybridelectricandelectricvehiclesIsolatedpowersuppliesInvertersDataacquisitionMotorcontrolPLCs,distributedcontrolsystemsSafetyApproval(Pending):UL1577recognizedUpto5000Vrmsfor1minuteCSAcomponentnotice5AapprovalIEC60950VDEcertificationconformityVDE0884-10CQCcertificationapprovalGB4943.
1KEYFEATURESHigh-speedisolatorswithintegrateddc-dcconverterFully-integratedsecondarysensingfeedback-controlledconverterwithditheringforlowEMIdc-dcconverterpeakefficiencyof83%withexternalpowerswitchUpto5WisolatedpowerwithexternalpowerswitchOptionsincludedc-dcshutdown,frequencycontrol,andsoftstartStandardVoltageConversion3/5Vtoisolated3/5V24Vtoisolated3/5V3/5Vtoisolated24V24Vtoisolated24VPrecisetimingondigitalisolators0–100Mbps18nstypicalpropdelayHighly-reliable:100yearlifetimeHighelectromagneticimmunityandultra-lowemissionsRoHScompliantpackagesSOIC-20widebodySOIC-16widebodyIsolationofupto5000VrmsHightransientimmunityof100kV/s(typical)AEC-Q100qualifiedWidetemprange–40to+125°Csilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03TableofContents1.
FeaturesList42.
OrderingGuide53.
FunctionalDescription.
83.
1TheoryofOperation83.
2DigitalIsolation83.
3DC-DCConverterApplicationInformation93.
3.
1Shutdown93.
3.
2Soft-Start93.
3.
3ProgrammableFrequency.
93.
3.
4ExternalTransformerDriver93.
3.
5VREGA,VREGB93.
3.
6OutputVoltageControl93.
3.
7Compensation.
103.
3.
8ThermalProtection103.
3.
9CycleSkipping103.
3.
10Low-VoltageConfiguration113.
3.
11Low-VoltagetoHigh-VoltageConfiguration123.
3.
12High-VoltagetoLow-VoltageConfiguration133.
3.
13High-VoltagetoHigh-VoltageConfiguration143.
4TransformerDesign154.
ElectricalSpecifications174.
1CalculatingTotalCurrentConsumption295.
DigitalIsolatorDeviceOperation305.
1DeviceStartup305.
2UndervoltageLockout305.
3LayoutRecommendations305.
3.
1SupplyBypass305.
3.
2OutputPinTermination.
305.
4Fail-SafeOperatingMode315.
5TypicalPerformanceCharacteristics.
316.
PinDescriptions357.
PackageOutlines407.
1PackageOutline:20-PinWideBodySOIC.
407.
2PackageOutline:16-PinWideBodySOIC.
428.
LandPatterns448.
1LandPattern:20-PinSOIC448.
2LandPattern:16-PinWide-BodySOIC459.
TopMarkings46silabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|29.
1Si88x2xTopMarking:20-PinWideBodySOIC469.
2Si88x2xTopMarking:16-PinWideBodySOIC4710.
RevisionHistory.
48silabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|31.
FeaturesListHigh-speedisolatorswithintegrateddc-dcconverterFully-integratedsecondarysensingfeedback-controlledcon-verterwithditheringforlowEMIdc-dcconverterpeakefficiencyof83%withexternalpowerswitchUpto5WisolatedpowerwithexternalpowerswitchOptionsincludedc-dcshutdown,frequencycontrol,andsoftstartStandardVoltageConversion3/5Vtoisolated3/5V24Vtoisolated3/5V3/5Vtoisolated24V24Vtoisolated24VPrecisetimingondigitalisolators0–100Mbps18nstypicalpropdelayHighly-reliable:100yearlifetimeHighelectromagneticimmunityandultra-lowemissionsRoHScompliantpackagesSOIC-20widebodySOIC-16widebodyIsolationofupto5000VrmsHightransientimmunityof100kV/s(typical)AEC-Q100qualifiedWidetemprange–40to+125°CSi88x2xDataSheetFeaturesListsilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|42.
OrderingGuideTable2.
1.
Si88x2xOrderingGuide1,2,3,4OrderingPartNumberDC-DCShutdownSoftStartFrequencyControlExternalSwitchForwardDigitalReverseDigitalInsulationRating(kVrms)PackageAvailableNowSi88220BC-ISYNNN203.
75WBSOIC-16Si88221BC-ISYNNN113.
75WBSOIC-16Si88222BC-ISYNNN023.
75WBSOIC-16Si88320BC-ISYYYN203.
75WBSOIC-20Si88321BC-ISYYYN113.
75WBSOIC-20Si88322BC-ISYYYN023.
75WBSOIC-20Si88420BC-ISNNNY203.
75WBSOIC-16Si88421BC-ISNNNY113.
75WBSOIC-16Si88422BC-ISNNNY023.
75WBSOIC-16Si88620BC-ISYYYY203.
75WBSOIC-20Si88621BC-ISYYYY113.
75WBSOIC-20Si88622BC-ISYYYY023.
75WBSOIC-20Si88220EC-ISYNNN203.
75WBSOIC-16Si88221EC-ISYNNN113.
75WBSOIC-16Si88222EC-ISYNNN023.
75WBSOIC-16Si88320EC-ISYYYN203.
75WBSOIC-20Si88321EC-ISYYYN113.
75WBSOIC-20Si88322EC-ISYYYN023.
75WBSOIC-20Si88420EC-ISNNNY203.
75WBSOIC-16Si88421EC-ISNNNY113.
75WBSOIC-16Si88422EC-ISNNNY023.
75WBSOIC-16Si88620EC-ISYYYY203.
75WBSOIC-20Si88621EC-ISYYYY113.
75WBSOIC-20Si88622EC-ISYYYY023.
75WBSOIC-20SamplingNowSi88220BD-ISYNNN205.
0WBSOIC-16Si88221BD-ISYNNN115.
0WBSOIC-16Si88222BD-ISYNNN025.
0WBSOIC-16Si88320BD-ISYYYN205.
0WBSOIC-20Si88321BD-ISYYYN115.
0WBSOIC-20Si88322BD-ISYYYN025.
0WBSOIC-20Si88x2xDataSheetOrderingGuidesilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|5OrderingPartNumberDC-DCShutdownSoftStartFrequencyControlExternalSwitchForwardDigitalReverseDigitalInsulationRating(kVrms)PackageSi88420BD-ISNNNY205.
0WBSOIC-16Si88421BD-ISNNNY115.
0WBSOIC-16Si88422BD-ISNNNY025.
0WBSOIC-16Si88620BD-ISYYYY205.
0WBSOIC-20Si88621BD-ISYYYY115.
0WBSOIC-20Si88622BD-ISYYYY025.
0WBSOIC-20Si88220ED-ISYNNN205.
0WBSOIC-16Si88221ED-ISYNNN115.
0WBSOIC-16Si88222ED-ISYNNN025.
0WBSOIC-16Si88320ED-ISYYYN205.
0WBSOIC-20Si88321ED-ISYYYN115.
0WBSOIC-20Si88322ED-ISYYYN025.
0WBSOIC-20Si88420ED-ISNNNY205.
0WBSOIC-16Si88421ED-ISNNNY115.
0WBSOIC-16Si88422ED-ISNNNY025.
0WBSOIC-16Si88620ED-ISYYYY205.
0WBSOIC-20Si88621ED-ISYYYY115.
0WBSOIC-20Si88622ED-ISYYYY025.
0WBSOIC-20Notes:1.
AllpackagesareRoHS-compliantwithpeaksolderreflowtemperaturesof260°CaccordingtotheJEDECindustrystandardclas-sifications.
2.
"Si"and"SI"areusedinterchangeably.
3.
AEC-Q100qualified.
4.
AllSi88xxxExproductoptionsaredefaultoutputhighoninputpowerloss.
AllSi88xxxBxproductoptionsaredefaultlow.
SeeSection5.
DigitalIsolatorDeviceOperationformoredetailsaboutdefaultoutputbehavior.
Si88x2xDataSheetOrderingGuidesilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|6AutomotiveGradeOPNsAutomotive-gradedevicesarebuiltusingautomotive-specificflowsatallstepsinthemanufacturingprocesstoensurerobustnessandlowdefectivity.
ThesedevicesaresupportedwithAIAG-compliantProductionPartApprovalProcess(PPAP)documentation,andfea-tureInternationalMaterialDataSystem(IMDS)andChinaAutomotiveMaterialDataSystem(CAMDS)listing.
Qualificationsarecompli-antwithAEC-Q100,andazero-defectmethodologyismaintainedthroughoutdefinition,design,evaluation,qualification,andmasspro-ductionsteps.
Table2.
2.
OrderingGuideforAutomotiveGradeOPNs1,2,4,5OrderingPartNumberDC-DCShutdownSoftStartControlFrequencyControlExternalSwitchForwardDigitalChannelsReverseDigitalChannelsInsulationRatingPackageSi88321EC-ASYYYN113.
75kVRMSWBSOIC-20Si88621BC-ASYYYY113.
75kVRMSWBSOIC-20Note:1.
AllpackagesareRoHS-compliant.
2.
"Si"and"SI"areusedinterchangeably.
3.
An"R"attheendofthepartnumberdenotestapeandreelpackagingoption.
4.
Automotive-Gradedevices(withan"–A"suffix)areidenticalinconstructionmaterials,topsidemarking,andelectricalparameterstotheirIndustrial-Grade(witha"–I"suffix)versioncounterparts.
Automotive-Gradeproductsareproducedutilizingfullautomotiveprocessflowsandadditionalstatisticalprocesscontrolsthroughoutthemanufacturingflow.
TheAutomotive-Gradepartnumberisincludedonshippinglabels.
5.
AdditionalOrderingPartNumbersmaybeavailableinAutomotive-Grade.
PleasecontactyourlocalSiliconLabssalesrepresen-tativeforfurtherinformation.
6.
InSection9.
TopMarkings,theManufacturingCoderepresentedbyeither"RTTTTT"or"TTTTTT"containsasitsfirstcharacteraletterintherangeNthroughZtoindicateAutomotive-Grade.
Si88x2xDataSheetOrderingGuidesilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|73.
FunctionalDescription3.
1TheoryofOperationTheSi88xxfamilyofproductsiscapableoftransmittingandreceivingdigitaldatasignalsfromanisolatedpowerdomaintoalocalsystempowerdomainwithupto5kVofisolation.
Eachparthasfourunidirectionaldigitalisolationchannels.
Inaddition,Si88xxprod-uctsincludeanintegratedcontrollerandswitchesforadc-dcconverterwhichregulatesoutputvoltagebysensingitontheisolatedside.
3.
2DigitalIsolationTheoperationofanSi88xxdigitalchannelisanalogoustothatofadigitalbuffer,exceptanRFcarriertransmitsdataacrosstheisola-tionbarrier.
Thissimplearchitectureprovidesarobustisolateddatapathandrequiresnospecialconsiderationsorinitializationatstart-up.
AsimplifiedblockdiagramforasingleSi88xxchannelisshowninFigure3.
1SimplifiedSi88xxChannelDiagramonpage8.
RFOSCILLATORMODULATORDEMODULATORABSemiconductor-BasedIsolationBarrierTransmitterReceiverFigure3.
1.
SimplifiedSi88xxChannelDiagramAchannelconsistsofanRFTransmitterandRFReceiverseparatedbyasilicondioxidecapacitiveisolationbarrier.
Inthetransmitter,inputAmodulatesthecarrierprovidedbyanRFoscillatorusingon/offkeying.
ThereceivercontainsademodulatorthatdecodestheinputstateaccordingtoitsRFenergycontentandappliestheresulttooutputBviatheoutputdriver.
ThisRFon/offkeyingschemeissuperiortopulsecodeschemesasitprovidesbest-in-classnoiseimmunity,lowpowerconsumption,andbetterimmunitytomagneticfields.
Seethefigurebelowformoredetails.
InputSignalOutputSignalModulationSignalFigure3.
2.
ModulationSchemeSi88x2xDataSheetFunctionalDescriptionsilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|83.
3DC-DCConverterApplicationInformationTheSi88xxisolateddc-dcconverterisbasedonamodifiedfly-backtopologyandusesanexternaltransformerandSchottkyrectifyingdiodeforlowcostandhighoperatingefficiency.
ThePWMcontrolleroperatesinclosed-loop,peakcurrentmodecontrolandgeneratesisolatedoutputvoltageswith2Waverageoutputpowerat5.
0V.
Optionsareavailableforupto24Vdcinputoroutputoperationandexternallyconfiguredswitchingfrequency.
Thedc-dccontrollermodulatesapairofinternalprimary-sidepowerswitches(seeFigure3.
3Si883xxBlockDiagram:3V–5VInputto3V–5VOutputonpage11)togenerateanisolatedvoltageatexternaldiodeD1cathode.
Closed-loopfeedbackisprovidedbyacompensatederroramplifier,whichcomparesthevoltageattheVSNSpintoaninternalvoltagereference.
Theresultingerrorvoltageisfedbackthroughtheisolationbarrierviaaninternalfeedbackpathtothecontroller,thuscompletingthecontrolloop.
Forhigherinputsupplyvoltagesthan5V,anexternalFETQ2ismodulatedbyadriverpinESWasshownin(seeFigure3.
5Si886xxBlockDiagram:24VInputto5VOutputonpage13).
AshuntresistorbasedvoltagesensepinRSNprovidescurrentsensingcapa-bilitytothecontroller.
Additionalfeaturesincludeanexternally-triggeredshutdownoftheconverterfunctionalityusingtheSHpinandaprogrammablesoftstartconfiguredbyacapacitorconnectedtotheSSpin.
TheSi88xxcanbeusedinlow-orhigh-voltageconfigurations.
Thesefeaturesandconfigurationsareexplainedinmoredetailbelow.
3.
3.
1ShutdownThisfeatureallowstheoperationofthedc-dcconvertertobeshutdownwhenassertedhigh.
Thisfunctionisprovidedbypin6(labeled"SH"ontheSi882xx)andpin7(labeled"SH_FC"ontheSi883xxandSi886xx).
ThisfeatureisnotavailableontheSi884xx.
Pin6orpin7providetheexactsamefunctionalityandshutdownthedc-dcconverterwhenassertedhigh.
Fornormaloperation,pins6and7shouldbeconnectedtoground.
3.
3.
2Soft-StartThedc-dccontrollerhasaninternaltimerthatcontrolsthepowerconversionstart-uptolimitinrushcurrent.
ThereisalsotheSoftStartoptionwhereuserscanprogramthesoftstartupbyanexternalcapacitorconnectedtotheSSpin.
ThisfeatureisavailableontheSi883xxandtheSi886xx.
3.
3.
3ProgrammableFrequencyThefrequencyofthePWMmodulatorissettoadefaultof250kHzforSi882xx/4xx.
Userscanprogramtheirdesiredfrequencywithinagivenbandof200kHzto800kHzbycontrollingthetimeconstantofanexternalRCconnectedtotheSH_FCandSSpinsforSi883xx/6xx.
3.
3.
4ExternalTransformerDriverThedc-dccontrollerhasinternalswitches(VSW)fordrivingthetransformerwithup-toa5.
5Vvoltagesupply.
Forhighervoltagesontheprimaryside,adriveroutput(ESW)isprovidedthatcandriveanexternalNMOSpowertransistorfordrivingthetransformer.
Whenthisconfigurationisused,ashuntresistorbasedvoltagesensepin(RSN)providescurrentsensingtothecontroller.
3.
3.
5VREGA,VREGBForsupportingvoltagesgreaterthan5.
5V,aninternalvoltageregulator(VREGA,VREGB)needstobeusedinconjunctionwithanexternalNPNtransistor,aresistorandacapacitortoprovideregulatedvoltagetotheIC.
3.
3.
6OutputVoltageControlTheisolatedoutputvoltage(VOUT)issensedbyaresistordividerthatprovidesfeedbacktothecontrollerthroughtheVSNSpin.
Thevoltageerrorisencodedandtransmittedbacktotheprimarysidecontrolleracrosstheisolationbarrier,whichinturnchangesthedutycycleofthetransformerdriver.
TheequationforVOUTisasfollows:VOUT=VSNS*(1+R1R2)+R1*IOFFSETSi88x2xDataSheetFunctionalDescriptionsilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|93.
3.
7CompensationThedc-dcconverterusespeakcurrentmodecontrol.
Theloopiscompensatedbyconnectinganexternalresistorinserieswithaca-pacitorfromtheCOMPpintoGNDB.
Thecompensationresistance,RCOMPisfixedat49.
9kΩforSi882xx/3xxand100kΩforSi884xx/6xxtomatchinternalresistance.
Capacitancevalueisgivenbythefollowingequation,wherefCiscrossoverfrequency:CCOMP=62*π*fC*RCOMPFormoredetailsonthecalculationsinvolved,seeAN892:DesignGuideforIsolatedDC/DCUsingtheSi882xx/883xx.
3.
3.
8ThermalProtectionAthermalshutdowncircuitisincludedtoprotectthesystemfromover-temperatureevents.
Thethermalshutdownisactivatedatajunc-tiontemperaturethatpreventspermanentdamagefromoccurring.
3.
3.
9CycleSkippingCycleskippingisincludedtoreduceswitchingpowerlossesatlightloads.
Thisfeatureistransparenttotheuserandisactivatedauto-maticallyatlightloads.
Theproductoptionswithintegratedpowerswitches(Si882xx/3xx)mayneverexperiencecycleskippingduringoperationevenatlightloadswhiletheexternalpowerswitchoptions(Si884xx/6xx)arelikelytohavecycleskippingstartatlightloads.
Si88x2xDataSheetFunctionalDescriptionsilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|103.
3.
10Low-VoltageConfigurationThelow-voltageconfigurationisusedforconverting3.
0Vto5.
5V.
AllproductoptionsoftheSi882xxandSi883xxareintendedforthisconfiguration.
AnadvantageofSi88xxdevicesoverotherconvertersthatusethissametopologyisthattheoutputvoltageissensedonthesecon-darysidewithoutrequiringadditionaloptocouplersandsupportcircuitrytobiasthoseoptocouplers.
Thisallowsthedc-dctooperatewithsuperiorlineandloadregulationwhilereducingexternalcomponentsandincreasinglifetimereliability.
Inatypicaldigitalsignalisolationapplication,thedc-dcpowerstheSi882xxandSi883xxVDDBasshowninthefigurebelow.
Inaddi-tiontopoweringtheisolatedsideofthedc-dc,itcandeliverupto2Wofpowertoexternalloads.
Thedc-dcrequiresaninputcapacitor,C2,blockingcapacitor,C1,transformer,T1,rectifyingdiode,D1,andanoutputcapacitor,C3.
ResistorsR1andR2dividetheoutputvoltagetomatchtheinternalreferenceoftheerroramplifier.
Type1loopcompensationmadebyRCOMPandCCOMParerequiredattheCOMPpin.
Thoughitisnotnecessaryfornormaloperation,werecommendthatasnubberbeusedtominimizeradiatedemissions.
MoredetailscanbefoundinAN892:DesignGuideforIsolatedDC-DCUsingtheSi882xx/883xx.
A1A2B1B2CMOSIsolationFwd.
DigitalChannelsSi8832xFreq.
ControlandShutdownSoftStartUVLOPowerFETDC-DCControllerVSWSH_FCSSVDDACSSRFSWPowerFETErrorAmpandCompensationEncoderUVLOVDDBVSNSCOMPVREGR1Usedinapplicationswhereconverteroutputis>5.
5VHVREGReferenceVinVoutC1T1D1C3HFRXHFTXHFTXHFTXHFRXHFRXR2C2RCOMPCCOMPRev.
DigitalChannelsFigure3.
3.
Si883xxBlockDiagram:3V–5VInputto3V–5VOutputSi88x2xDataSheetFunctionalDescriptionsilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|113.
3.
11Low-VoltagetoHigh-VoltageConfigurationThelow-voltagetohigh-voltageconfigurationisusedforconverting3.
0V–5.
5Vupto24V.
Inatypicaldigitalsignalisolationapplication,thedc-dcpowerstheSi882xxandSi883xxVOUTasshowninthefigurebelow.
Inaddi-tiontopoweringtheisolatedsideofthedc-dc,itcandeliverupto2Wofpowertoexternalloads.
Thedc-dcrequiresaninputcapacitor,C2,blockingcapacitor,C1,transformer,T1,rectifyingdiode,D1,andanoutputcapacitor,C3.
ResistorsR1andR2dividetheoutputvoltagetomatchtheinternalreferenceoftheerroramplifier.
TosupplyVDDB,Q3transistorisbiasedandfilteredbyR5andC4.
Type1loopcompensationmadebyRCOMPandCCOMParerequiredattheCOMPpin.
Thoughitisnotnecessaryfornormaloperation,werecommendthatasnubberbeusedtominimizeradiatedemissions.
MoredetailscanbefoundinAN892:DesignGuideforIsolatedDC-DCUsingtheSi882xx/883xx.
A1A2B1B2CMOSIsolationFwd.
DigitalChannelsSi8832xFreq.
ControlandShutdownSoftStartUVLOPowerFETDC-DCControllerVSWSH_FCSSVDDACSSRFSWPowerFETErrorAmpandCompensationEncoderVSNSCOMPR1VinVoutC1T1D1C3HFRXHFTXHFTXHFTXHFRXHFRXR2C2RCOMPCCOMPRev.
DigitalChannelsVDDBVREGBUVLOVREGReferenceR5C4Q3Figure3.
4.
Si883xxBlockDiagram:3V–5VInputtoupto24VOutputSi88x2xDataSheetFunctionalDescriptionsilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|123.
3.
12High-VoltagetoLow-VoltageConfigurationThehigh-voltageconfigurationisusedforconvertingupto24Vto3.
3Vor5.
0V.
AllproductoptionsoftheSi884xxandSi886xxareintendedforthisconfiguration.
Si884xxandSi886xxcanbeusedfordc-dcapplicationsthathaveprimarysidevoltagegreaterthan5.
5V.
Thedc-dcconverterusestheisolatedflybacktopology.
Withthistopology,theswitchandsenseresistorareexternal,allowinghigherswitchingvoltages.
DigitalisolatorsupplyVDDAoftheSi884xxandSi886xxrequireasupplylessthanorequalto5.
5V.
Ifasuitablesupplyisnotavailableontheprimaryside,theVREGAvoltagereferencewithexternalNPNtransistorcansupplyVDDA.
Thiseliminatestheneedtodesignanaddi-tionallinearregulatorcircuit.
LiketheSi882xxandSi883xx,theoutputvoltageissensedonthesecondarysidewithoutrequiringaddi-tionaloptocouplersandsupportcircuitrytobiasthoseoptocouplers.
Thisallowsthedc-dctooperatewithsuperiorlineandloadregula-tion.
ThefigurebelowshowstheblockdiagramofanSi886xxwithexternalcomponents.
Si886xxisdifferentfromtheSi882xx/883xxasithasexternally-controlledswitchingfrequencyandsoftstart.
Thedc-dcrequiresinputcapacitorC2,transformerT1,switchQ1,senseresistorR4,rectifyingdiodeD1andanoutputcapacitorC3.
TosupplyVDDA,Q2transistorisbiasedandfilteredbyR3andC1.
Exter-nalfrequencyandsoftstartbehaviorissetbyCSSandRFSW.
ResistorsR1andR2dividetheoutputvoltagetomatchtheinternalreferenceoftheerroramplifier.
Type1loopcompensationmadebyRCOMPandCCOMParerequiredattheCOMPpin.
Thoughitisnotnecessaryfornormaloperation,werecommendtouseasnubber,tominimizehigh-frequencyemissions.
Forfurtherdetails,seeAN901:DesignGuideforIsolatedDC-DCUsingtheSi884xx/886xx.
A1A2B1B2CMOSIsolationFwd.
DigitalChannelRev.
DigitalChannelSi8862xFreq.
ControlandShutdownSoftStartUVLODC-DCControllerESWFC_SHSSVDDACSSRFSWErrorAmpandCompensationEncoderVDDBVSNSCOMPR2VOUTT1D1C3HFRXHFTXHFRXHFTXHFTXHFRXR1VREGReferenceVREGARSNGNDPFETDriverCurrentSensingR4R3Q1C1Q2VinC2VREGBUsedinapplicationswhereconverteroutputis>5.
5VRCOMPCCOMPUVLOVREGReferenceFigure3.
5.
Si886xxBlockDiagram:24VInputto5VOutputSi88x2xDataSheetFunctionalDescriptionsilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|133.
3.
13High-VoltagetoHigh-VoltageConfigurationThehigh-voltageconfigurationisusedforconvertingupto24Vtoupto24V.
Si884xxandSi886xxcanbeusedfordc-dcapplicationsthathaveprimarysidevoltagegreaterthan5.
5V.
Thedcdcconverterusestheisolatedflybacktopology.
Withthistopology,theswitchandsenseresistorareexternal,allowinghigherswitchingvoltages.
Digitalisola-torsupplyVDDAoftheSi884xxandSi886xxrequireasupplylessthanorequalto5.
5V.
Ifasuitablesupplyisnotavailableontheprimaryside,theVREGAvoltagereferencewithexternalNPNtransistorcansupplyVDDA.
Thiseliminatestheneedtodesignanaddi-tionallinearregulatorcircuit.
LiketheSi882xxandSi883xx,theoutputvoltageissensedonthesecondarysidewithoutrequiringaddi-tionaloptocouplersandsupportcircuitrytobiasthoseoptocouplers.
Thisallowsthedc-dctooperatewithsuperiorlineandloadregula-tion.
ThefigurebelowshowstheblockdiagramofanSi886xxwithexternalcomponents.
Si886xxisdifferentfromtheSi882xx/883xxasithasexternally-controlledswitchingfrequencyandsoftstart.
Thedc-dcrequiresinputcapacitorC2,transformerT1,switchQ1,senseresistorR4,rectifyingdiodeD1andanoutputcapacitorC3.
TosupplyVDDA,Q2transistorisbiasedandfilteredbyR3andC1.
Exter-nalfrequencyandsoftstartbehaviorissetbyCSSandRFSW.
ResistorsR1andR2dividetheoutputvoltagetomatchtheinternalreferenceoftheerroramplifier.
TosupplyVDDB,Q3transistorisbiasedandfilteredbyR5andC4.
Type1loopcompensationmadebyRCOMPandCCOMParerequiredattheCOMPpin.
Thoughitisnotnecessaryfornormaloperation,werecommendtouseasnubber,tominimizehigh-frequencyemissions.
Forfurtherdetails,seeAN901:DesignGuideforIsolatedDC-DCUsingtheSi884xx/886xx.
A1A2B1B2CMOSIsolationFwd.
DigitalChannelRev.
DigitalChannelSi8862xFreq.
ControlandShutdownSoftStartUVLODC-DCControllerESWFC_SHSSVDDACSSRFSWErrorAmpandCompensationEncoderVDDBVSNSCOMPR2VOUTT1D1C3HFRXHFTXHFRXHFTXHFTXHFRXR1VREGReferenceVREGARSNGNDPFETDriverCurrentSensingR4R3Q1C1Q2VinC2VREGBRCOMPCCOMPUVLOVREGReferenceR5C4Q3Figure3.
6.
Si886xxBlockDiagram:Upto24VInputtoupto24VOutputSi88x2xDataSheetFunctionalDescriptionsilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|143.
4TransformerDesignThetablebelowprovidesalistoftransformersandtheirparametriccharacteristicsthathavebeenvalidatedtoworkwithSi882xx/3xxproducts(inputvoltageof3to5V)andSi884xx/Si886xxproducts(inputvoltageof24V).
Itisrecommendedthatusersorderthetrans-formersfromthevendorsperthepartnumbersgivenbelow.
RefertoAN892:DesignGuideforIsolatedDC/DCusingtheSi882xx/883xxandAN901:DesignGuideforIsolatedDC/DCusingtheSi884xx/886xxforvoltagetranslationapplicationsnotlistedbelow.
Tomanufacturetransformersfromyourpreferredsuppliersthatmaynotbelistedbelow,pleasespecifytosuppliertheparametricchar-acteristicsasspecifiedinthetablebelowforagiveninputvoltageandisolationrating.
Table3.
1.
TransformerSpecificationsTransformerSupplierOrderingPart#InputVoltageOutputVoltageTurnsRatioP:SLeakageInductancePrimaryInductancePrimaryResistanceIsolationRatingUMEC(http://www.
umec-usa.
com)UTB02185s4.
5–5.
5V3.
0–5.
5V1.
0:4.
0100nHmax2H±5%0.
05max2.
5kVRMSUMEC(http://www.
umec-usa.
com)UTB02205s12V,24V3.
3–5.
0V,15V3.
0:1.
0800nHmax25H±5%0.
135max2.
5kVRMSUMEC(http://www.
umec-usa.
com)UTB02240s4.
5–5.
5V3.
0–5.
5V1.
0:4.
0100nHmax2H±5%0.
05max5kVRMSUMEC(http://www.
umec-usa.
com)UTB02250s7–24V3.
3–5.
5V3.
0:1.
0600nHmax25H±5%0.
135max5kVRMSCoilcraft1(http://www.
coil-craft.
com)TA7608-AL4.
5–5.
5V3.
0–5.
5V1.
0:4.
060nHmax2H±5%0.
033max2.
5kVRMSCoilcraft1(http://www.
coil-craft.
com)TA7618-AL4.
5–5.
5V3.
0–5.
5V1.
0:4.
064nHmax2.
0H±5%0.
031max5kVRMSCoilcraft1(http://www.
coil-craft.
com)TA7788-AL12V5V,15V1.
00:1.
25:0.
75554nHmax25H±5%0.
49max5kVRMSCoilcraft1(http://www.
coil-craft.
com)UA790212V5V,15V3.
0:1.
0971nHmax25H±5%0.
075max5kVRMSTDK(http://www.
tdk.
com)P100940_A14.
5–5.
5V3.
0–5.
5V1.
0:4.
040nHmax2.
0H±10%0.
1max2.
4kVRMSMentech1(http://www.
mnc-tek.
com)TTER09-0457S18-24V15V,24V1.
0:1.
0550nHmax25H±10%0.
4max2.
5kVRMSMentech1(http://www.
mnc-tek.
com)TTER09-0458S18-24V8-24V1.
0:1.
0550nHmax25H±10%0.
4max5kVRMSSi88x2xDataSheetFunctionalDescriptionsilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|15TransformerSupplierOrderingPart#InputVoltageOutputVoltageTurnsRatioP:SLeakageInductancePrimaryInductancePrimaryResistanceIsolationRatingMentech1(http://www.
mnc-tek.
com)TTEP09-0568S13.
0-5.
5V5.
0V1.
0:4.
0100nHmax1.
5μH±8%0.
05max5kVRMSPulse(http://www.
pulsee-lectron-ics.
com/)PA4896NL8–24V7–24V1.
0:1.
0650nHmax25H±10%0.
25max2.
5kVRMSPulse(http://www.
pulsee-lectron-ics.
com/)PA4897NL8–24V7–24V1.
0:1.
0650nHmax25H±10%0.
25max5kVRMSNotes:1.
AEC-Q200qualified.
2.
Forreferencedesigndetails,seeAN892:DesignGuideforIsolatedDC/DCusingtheSi882xx/883xxorAN901:DesignGuideforIsolatedDC/DCusingtheSi884xx/886xx.
Si88x2xDataSheetFunctionalDescriptionsilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|164.
ElectricalSpecificationsTable4.
1.
RecommendedOperatingConditionsParameterSymbolMinTypMaxUnitAmbientOperatingTemperatureTA–4025125°CPowerInputVoltageVDDP3.
0—5.
5VSupplyVoltageVDDA3.
0—5.
5VVDDB3.
0—5.
5VTable4.
2.
ElectricalCharacteristics1VIN=24V;VDDA=VDDP=3.
0to5.
5V(seeFigure4.
2MeasurementCircuitforConverterEfficiencyandRegulationforSi882xx,Si883xxonpage24)forallSi8822x/32x;VDDA=4.
3V(seeFigure4.
3MeasurementCircuitforConverterEfficiencyandRegulationforSi884xx,Si886xxonpage24)forallSi8842x/62x;TA=–40to125°Cunlessotherwisenoted.
ParameterSymbolTestConditionMinTypMaxUnitDC/DCConverterSwitchingFrequencySi8822x,Si8842xFSW—225250275kHzSwitchingFrequencySi8832x,Si8862xFSWRFSW=23.
3kΩFSW=1025.
5/(RFSWxCSS)CSS=220nF(seeFigure3.
5Si886xxBlockDiagram:24VInputto5VOutputonpage13)(1%toleranceonBOM)180200220kHzRFSW=9.
3kΩFSW=1025.
5/(RFSWxCSS)CSS=220nF(seeFigure3.
5Si886xxBlockDiagram:24VInputto5VOutputonpage13)(1%toleranceonBOM)450500550kHzRFSW=5.
18kΩ,CSS=220nF(seeFigure3.
5Si886xxBlockDiagram:24VInputto5VOutputonpage13)810900990kHzVSNSvoltageVSNSILOAD=0A1.
0021.
051.
097VVSNScurrentoffsetIoffset–500—500nAOutputVoltageAccuracy2—SeeFigure4.
2MeasurementCircuitforConverterEfficiencyandRegulationforSi882xx,Si883xxonpage24ILOAD=0mA–5—+5%Si88x2xDataSheetElectricalSpecificationssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|17ParameterSymbolTestConditionMinTypMaxUnitLineRegulationΔVOUT(line)/ΔVDDPSeeFigure4.
2MeasurementCircuitforConverterEfficiencyandRegulationforSi882xx,Si883xxonpage24ILOAD=50mAVDDPvariesfrom4.
5to5.
5V—1—mV/VLoadRegulationΔVOUT(load)/VOUTSeeFigure4.
2MeasurementCircuitforConverterEfficiencyandRegulationforSi882xx,Si883xxonpage24ILOAD=50to400mA—0.
1—%OutputVoltageRippleSi8822x,Si8832xSi8842x,Si8862x—ILOAD=100mASeeFigure4.
2MeasurementCircuitforConverterEfficiencyandRegulationforSi882xx,Si883xxonpage24SeeFigure4.
3MeasurementCircuitforConverterEfficiencyandRegulationforSi884xx,Si886xxonpage24—100—mVp-pTurn-onovershootΔVOUT(start)SeeFigure4.
2MeasurementCircuitforConverterEfficiencyandRegulationforSi882xx,Si883xxonpage24CIN=COUT=0.
1μFinparallelwith10μF,ILOAD=0A—2—%ContinuousOutputCurrentILOAD(max)SeeFigure4.
2MeasurementCircuitforConverterEfficiencyandRegulationforSi882xx,Si883xxonpage24mASi8822x,Si8832x5.
0Vto5.
0V—400—3.
3Vto3.
3V—400—3.
3Vto5.
0V—250—5.
0Vto3.
3V—550—Si8842x,Si8862x24.
0to5.
0V—1000—24.
0to3.
3V—1500—Cycle-by-cycleaveragecurrentlimitSi8822x,Si8832xILIMSeeFigure4.
2MeasurementCircuitforConverterEfficiencyandRegulationforSi882xx,Si883xxonpage24Outputshortcircuited—3—ANoLoadSupplyCurrentIDDPSi8822x,Si8832xIDDPQ_DCDC3SeeFigure4.
2MeasurementCircuitforConverterEfficiencyandRegulationforSi882xx,Si883xxonpage24VDDP=VDDA=5V—30—mASi88x2xDataSheetElectricalSpecificationssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|18ParameterSymbolTestConditionMinTypMaxUnitNoLoadSupplyCurrentIDDASi8822x,Si8832xIDDAQ_DCDC4SeeFigure4.
2MeasurementCircuitforConverterEfficiencyandRegulationforSi882xx,Si883xxonpage24VDDP=VDDA=5V—5.
7—mANoLoadSupplyCurrentIDDPSi8842x,Si8862xIDDPQ_DCDC3SeeFigure4.
3MeasurementCircuitforConverterEfficiencyandRegulationforSi884xx,Si886xxonpage24VIN=24V—0.
8—mANoLoadSupplyCurrentIDDASi8842x,Si8862xIDDAQ_DCDC4SeeFigure4.
3MeasurementCircuitforConverterEfficiencyandRegulationforSi884xx,Si886xxonpage24VIN=24V—5.
8—mAPeakEfficiencyηSeeFigure4.
2MeasurementCircuitforConverterEfficiencyandRegulationforSi882xx,Si883xxonpage24SeeFigure4.
3MeasurementCircuitforConverterEfficiencyandRegulationforSi884xx,Si886xxonpage24%Si8822x,Si8832x—78—Si8842x,Si8862x—83—VoltageRegulatorReferenceVoltageSi8842x,Si8862xVREGA,VREGBIREG=600ASeeFigure5.
11Efficiencyvs.
LoadCurrentoverTempera-ture(5.
0to5.
0V)onpage32fortypicalI–Vcurve—4.
8—VVREGtempcoKTVREG——–0.
43—mV/°CVREGinputcurrentIREG—350—950ASoftstarttime,fullloadtSSTSeeFigure5.
1624V–5VVOUTStartupvs.
Time,NoLoadCurrentonpage33throughFigure5.
215V–5VVOUTStartupvs.
Time(400mALoadCurrent)onpage34fortypicalsoftstarttimesoverloadconditions.
msSi8822x,Si8842x—25—Si8832x,Si8862x—50—RestartDelayfromfaulteventtOTP——21—sDigitalIsolatorVDDUndervoltageThresholdVDDUV+VDDA,VDDBrising—2.
7—VVDDUndervoltageThresholdVDDUV–VDDA,VDDBfalling—2.
6—VVDDUndervoltageHysteresisVDDHYS——100—mVPositive-GoingInputThresholdVT+Allinputsrising—1.
67—VNegative-GoingInputThresholdVT–Allinputsfalling—1.
23—VInputHysteresisVHYS——0.
44—VHighLevelInputVoltageVIH—2.
0——VSi88x2xDataSheetElectricalSpecificationssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|19ParameterSymbolTestConditionMinTypMaxUnitLowLevelInputVoltageVIL———0.
8VHighLevelOutputVoltageVOHlOH=–4mAVDDA,VDDB–0.
4——VLowLevelOutputVoltageVOLlOL=4mA——0.
4VInputLeakageCurrentIL———±10AOutputImpedanceZO——50—ΩSupplyCurrent,CLOAD=15pFDC,VDDx=3.
3V±10%Si88x20EDVDDA—Allinputs=04.
27.
210.
2mAVDDB—Allinputs=02.
54.
56.
5VDDA—Allinputs=11.
84.
87.
8VDDB—Allinputs=12.
04.
06.
0Si88x21EDVDDA—Allinputs=02.
75.
78.
7mAVDDB—Allinputs=03.
95.
97.
9VDDA—Allinputs=11.
84.
87.
8VDDB—Allinputs=12.
04.
06.
0Si88x22EDVDDA—Allinputs=00.
83.
86.
8mAVDDB—Allinputs=05.
37.
39.
3VDDA—Allinputs=11.
84.
87.
8VDDB—Allinputs=12.
04.
06.
0Si88x20BDVDDA—Allinputs=01.
84.
87.
8mAVDDB—Allinputs=02.
04.
06.
0VDDA—Allinputs=14.
27.
210.
2VDDB—Allinputs=12.
54.
56.
5Si88x21BDVDDA—Allinputs=01.
84.
87.
8mAVDDB—Allinputs=02.
04.
06.
0VDDA—Allinputs=12.
75.
78.
7VDDB—Allinputs=13.
95.
97.
9Si88x22BDSi88x2xDataSheetElectricalSpecificationssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|20ParameterSymbolTestConditionMinTypMaxUnitVDDA—Allinputs=01.
84.
87.
8mAVDDB—Allinputs=02.
04.
06.
0VDDA—Allinputs=10.
83.
86.
8VDDB—Allinputs=15.
37.
39.
3DC,VDDx=5V±10%Si88x20EDVDDA—Allinputs=06.
59.
512.
5mAVDDB—Allinputs=02.
54.
56.
5VDDA—Allinputs=13.
06.
09.
0VDDB—Allinputs=12.
04.
06.
0Si88x21EDVDDA—Allinputs=05.
08.
011.
0mAVDDB—Allinputs=04.
06.
08.
0VDDA—Allinputs=13.
06.
09.
0VDDB—Allinputs=12.
04.
06.
0Si88x22EDVDDA—Allinputs=03.
56.
59.
5mAVDDB—Allinputs=05.
57.
59.
5VDDA—Allinputs=13.
06.
09.
0VDDB—Allinputs=12.
04.
06.
0Si88x20BDVDDA—Allinputs=03.
06.
09.
0mAVDDB—Allinputs=02.
04.
06.
0VDDA—Allinputs=16.
59.
512.
5VDDB—Allinputs=12.
54.
56.
5Si88x21BDVDDA—Allinputs=03.
06.
09.
0mAVDDB—Allinputs=02.
04.
06.
0VDDA—Allinputs=15.
08.
011.
0VDDB—Allinputs=14.
06.
08.
0Si88x22BDVDDA—Allinputs=03.
06.
09.
0mAVDDB—Allinputs=02.
04.
06.
0VDDA—Allinputs=13.
56.
59.
5VDDB—Allinputs=15.
57.
59.
5Si88x2xDataSheetElectricalSpecificationssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|21ParameterSymbolTestConditionMinTypMaxUnitNote:Forcalculatingtotalcurrent,includingthedynamiccomponent,seeCalculatingTotalCurrentConsumption.
TimingCharacteristicsDataRate——0—100MbpsMinimumPulseWidth——10——nsPropagationDelaytPHLSeeFigure4.
1PropagationDelayTimingforDigitalChan-nelsonpage23VDDx=3.
3V12.
017.
022.
0nsPropagationDelaytPLHSeeFigure4.
1PropagationDelayTimingforDigitalChan-nelsonpage23VDDx=3.
3V11.
015.
020.
0nsPropagationDelaytPHLSeeFigure4.
1PropagationDelayTimingforDigitalChan-nelsonpage23VDDx=5.
0V13.
018.
023.
0nsPropagationDelaytPLHSeeFigure4.
1PropagationDelayTimingforDigitalChan-nelsonpage23VDDx=5.
0V10.
013.
018.
0nsPulseWidthDistortion|tPLH–tPHL|PWDSeeFigure4.
1PropagationDelayTimingforDigitalChan-nelsonpage23VDDx=3.
3V—2.
55.
0nsPulseWidthDistortion|tPLH–tPHL|PWDSeeFigure4.
1PropagationDelayTimingforDigitalChan-nelsonpage23VDDx=5.
0V—4.
57.
0nsPropagationDelaySkew6tPSK(P-P)——3.
010.
0nsChannel-ChannelSkewtPSK——2.
04.
0nsOutputRiseTimetrCL=15pF—2.
5—nsOutputFallTimetfCL=15pF—2.
5—nsCommonModeTransientImmunityCMTIVI=VDDxor0VVCM=1500V(SeeFigure4.
4Common-ModeTransientImmunityTestCircuitonpage25)40100—kV/sStartupTime7tSU——55—sSi88x2xDataSheetElectricalSpecificationssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|22ParameterSymbolTestConditionMinTypMaxUnitNotes:1.
OverrecommendedoperatingconditionsasnotedinTable4.
1RecommendedOperatingConditionsonpage17.
2.
VOUT=VSNSx(1+R1/R2)+R1xIoffset3.
VDDPcurrentneededfordc-dccircuits.
4.
VDDAcurrentneededfordc-dccircuits.
5.
Thenominaloutputimpedanceofanisolatordriverchannelisapproximately50Ω,±40%,whichisacombinationofthevalueoftheon-chipseriesterminationresistorandchannelresistanceoftheoutputdriverFET.
Whendrivingloadswheretransmissionlineeffectswillbeafactor,outputpinsshouldbeappropriatelyterminatedwithcontrolledimpedancePCBtraces.
6.
tPSK(P-P)isthemagnitudeofthedifferenceinpropagationdelaytimesmeasuredbetweendifferentunitsoperatingatthesamesupplyvoltages,load,andambienttemperature.
7.
Start-uptimeisthetimeperiodfromwhentheUVLOthresholdisexceededtovaliddataattheoutput.
InputtPLHtPHLOutputtrtf90%10%90%10%1.
4V1.
4VFigure4.
1.
PropagationDelayTimingforDigitalChannelsSi88x2xDataSheetElectricalSpecificationssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|23VINIINC210F10FC1T1D1DB2440100LR4100C5100pFUTB02185SIDDBU1IDDPIDDAVSWVDDPVDDASHGNDAGNDPGNDBCOMPVSNSVDDBISOLATIONR349.
9kC41.
5nFR213.
3kR149.
9kC310FILOAD+_+_VOUTFigure4.
2.
MeasurementCircuitforConverterEfficiencyandRegulationforSi882xx,Si883xxILOADIDDPIINVIN+_C210FIDDAISOLATIONVOUT+_C322FSBRT5A50SAR827.
4C6100pFUTB02205SD1T1Q1IDDBFDT3612R719.
6kQ2MMBT2222LT1R50.
1U2R149.
9kR213.
3kR3100kC41.
5nFC50.
1FR618kC10.
22FGNDASH_FCSSVDDAVREGGNDPRSNSESWVDDBVSNSCOMPGNDBR982C768pFC810FFigure4.
3.
MeasurementCircuitforConverterEfficiencyandRegulationforSi884xx,Si886xxSi88x2xDataSheetElectricalSpecificationssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|24+_Si88xxVSWVDDP/VDDAVDDBGNDAGNDBHighVoltageTransientGeneratorReverseChannelOutputForwardChannelInputForwardChannelOuputReverseChannelInputIsolatedSupplyDC-DCOutputPowersB-sideReferencedtoEarthGroundReverseChannelMeasuredbyForwardChannelinLoopbackHighVoltageDifferentialProbeOscilloscopeFigure4.
4.
Common-ModeTransientImmunityTestCircuitTable4.
3.
RegulatoryInformation1,2CSATheSi88xxiscertifiedunderCSAComponentAcceptanceNotice5A.
Formoredetails,seeMasterContractNumber232873.
Ratedupto600VRMSreinforcedinsulationworkingvoltage;upto1000VRMSbasicinsulationworkingvoltage.
VDETheSi88xxiscertifiedaccordingtoVDE0884-10.
Formoredetails,seecertificate40018443.
VDE0884-10:Upto891Vpeakforbasicinsulationworkingvoltage.
ULTheSi88xxiscertifiedunderUL1577componentrecognitionprogram.
Formoredetails,seeFileE257455.
Ratedupto5000VRMSisolationvoltageforbasicprotection.
CQCTheSi88xxiscertifiedunderGB4943.
1-2011.
Ratedupto600VRMSreinforcedinsulationworkingvoltage;upto1000VRMSbasicinsulationworkingvoltage.
Notes:1.
RegulatoryCertificationsapplyto3.
75and5.
0kVrmsrateddevices,whichareproductiontestedto4.
5and6.
0kVrmsfor1sec,respectively.
2.
Allcertificationsarepending.
Si88x2xDataSheetElectricalSpecificationssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|25Table4.
4.
InsulationandSafety-RelatedSpecificationsParameterSymbolTestConditionValueUnitWBSOIC-20WBSOIC-16NominalExternalAirGap(Clearance)CLR8.
01mmNominalExternalTracking(Creepage)CPG8.
01mmMinimumInternalGap(InternalClearance)DTI0.
014mmTrackingResistancePTIorCTIIEC60112600VErosionDepthED0.
019mmResistance(Input-Output)2RIO1012ΩCapacitance(Input-Output)2CIOf=1MHz1.
4pFInputCapacitance3CI4.
0pFNotes:1.
Thevaluesinthistablecorrespondtothenominalcreepageandclearancevalues.
VDEcertifiestheclearanceandcreepagelimitsas8.
5mmminimumfortheWBSOIC-20andWBSOIC-16packages.
ULdoesnotimposeaclearanceandcreepagemini-mumforcomponent-levelcertifications.
CSAcertifiestheclearanceandcreepagelimitsas7.
6mmminimumfortheWBSOIC-20andWBSOIC-16packages.
2.
Todetermineresistanceandcapacitance,theSi88xxisconvertedintoa2-terminaldevice.
Pins1–8areshortedtogethertoformthefirstterminalandpins9–16areshortedtogethertoformthesecondterminal.
Theparametersarethenmeasuredbetweenthesetwoterminals.
3.
Measuredfrominputtoground.
Table4.
5.
IEC60664-1RatingsParameterTestConditionSpecificationWBSOIC-20WBSOIC-16BasicIsolationGroupMaterialGroupIInstallationClassificationRateMainsVoltages109ΩNote:1.
Maintenanceofthesafetydataisensuredbyprotectivecircuits.
TheSi88xxprovidesaclimateclassificationof40/125/21.
Table4.
7.
IECSafetyLimitingValues1ParameterSymbolTestConditionWBSOIC-20,WBSOIC-16UnitSafetyTemperatureTS150°CSafetyInputCurrentISθJA=55°C/W(WBSOIC-20,WBSOIC-16),VDDA=5.
5V,TJ=150°C,TA=25°C413mADevicePowerDissipationPS2.
27WNote:1.
Maximumvalueallowedintheeventofafailure.
RefertothethermalderatingcurveinFigure4.
5WBSOIC-16/20ThermalDe-ratingCurveDependenceofSafetyLimitingValuesperVDE0884-10onpage28.
Si88x2xDataSheetElectricalSpecificationssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|27Table4.
8.
ThermalCharacteristicsParameterSymbolWBSOIC-20,WBSOIC-16UnitICJunction-to-AirThermalResistanceθJA55°C/WFigure4.
5.
WBSOIC-16/20ThermalDeratingCurveDependenceofSafetyLimitingValuesperVDE0884-10Si88x2xDataSheetElectricalSpecificationssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|28Table4.
9.
AbsoluteMaximumRatings1ParameterSymbolMinMaxUnitStorageTemperatureTSTG–65+150°CJunctionTemperatureTJ—+150°CInput-sideSupplyVoltageVDDAVDDP–0.
66.
0VOutputsupplyVDDB–0.
66.
0VVoltageonanyPinwithrespecttoGroundVIN–0.
5VDD+0.
5VOutputDriveCurrentperChannelIO10mAInputCurrentforVREGA,VREGBIREG—1mALeadSolderTemperature(10s)—260°CESDperAEC-Q100HBM—4kVCDM—2kVMaximumIsolation(InputtoOutput)(1sec)WBSOIC-20,WBSOIC-24—6500VRMSNotes:1.
Permanentdevicedamagemayoccuriftheabsolutemaximumratingsareexceeded.
Functionaloperationshouldberestrictedtotheconditionsasspecifiedintheoperationalsectionsofthisdatasheet.
Exposuretoabsolutemaximumratingconditionsforex-tendedperiodsmayaffectdevicereliability.
4.
1CalculatingTotalCurrentConsumptionForcalculatingdynamicsupplycurrent,usethefollowingguidelines:Thedynamiccurrentiscalculatedasfollows:IDD(ac)=(CL)*(V)*(D2)*1E3WhereIDD(ac)isthedynamiccomponentofcurrent,peroutputchannel,inmADisthedata-rateofthatchannel,inMbpsCListheloadcapacitanceconnectedtotheoutput,inpFVistheVDDontheoutputside,inVoltsForexample,fortheSi88x21ED-IS,thetotalcurrentcanbecalculatedasfollows:TheaverageDCIDDA/BistheaverageoftheDCcurrentvaluesatinput0andinput1,forVDDAandVDDBrespectively,asstatedinthetableaboveforSi88x21ED.
CL,pFVDD,VData-rate,MBpsIDD(ac),peroutputchannel,mATotalIDDA(ac),mATotalIDDB(ac),mAAverageDCIDDA,mAAverageDCIDDB,mATotalIDDA,mATotalIDDB,mA20.
005.
0010.
000.
500.
500.
508.
256.
958.
757.
45203.
31003.
303.
303.
308.
256.
9511.
5510.
25Si88x2xDataSheetElectricalSpecificationssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|295.
DigitalIsolatorDeviceOperationTable5.
1.
Si88xxLogicOperationVIInputVDDI1,2,3,4VDDO1,2,3,4VOOutputCommentsHPPHNormaloperation.
LPPLXUPPL4H4UpontransitionofVDDIfromunpoweredtopowered,VOreturnstothesamestateasVI.
XPUPUndeterminedUpontransitionofVDDOfromunpoweredtopowered,VOreturnstothesamestateasVI.
Notes:1.
VDDIandVDDOaretheinputandoutputpowersupplies.
VIandVOaretherespectiveinputandoutputterminals.
2.
P=powered;UP=unpowered.
3.
NotethatanI/Ocanpowerthedieforagivensidethroughaninternaldiodeifitssourcehasadequatecurrent.
Thissituationshouldbeavoided.
WerecommendthatI/O'snotbedrivenhighwhenprimarysidesupplyisturnedofforwhenindc-dcshut-downmode.
4.
SeeSection2.
OrderingGuidefordetails.
Thisistheselectablefail-safeoperatingmode(orderingoption).
WhenVDDBispow-eredviatheprimarysideandtheintegrateddc-dc,thedefaultoutputsareundeterminedassecondarysidepowerisnotavailablewhenprimarysidepowershutsoff.
5.
1DeviceStartupOutputsareheldlowduringpowerupuntilVDDxisabovetheUVLOthresholdfortimeperiodtSU.
Followingthis,theoutputsfollowthestatesofinputs.
5.
2UndervoltageLockoutUndervoltageLockout(UVLO)isprovidedtopreventerroneousoperationduringdevicestartupandshutdownorwhenVDDxisbelowitsspecifiedoperatingcircuitsrange.
BothSideAandSideBeachhavetheirownundervoltagelockoutmonitors.
EachsidecanenterorexitUVLOindependently.
Forexample,SideAunconditionallyentersUVLOwhenVDDAfallsbelowVDDUV–andexitsUVLOwhenVDDArisesaboveVDDUV+.
SideBoperatesthesameasSideAwithrespecttoitsVDDsupply.
5.
3LayoutRecommendationsToensuresafetyintheenduserapplication,highvoltagecircuits(i.
e.
,circuitswith>30VAC)mustbephysicallyseparatedfromthesafetyextra-lowvoltagecircuits(SELVisacircuitwith5.
5V.
Ifoutputvoltageis≤5.
5V,thispinshouldbereadasDNCorDoNotConnect.
NCNoconnect;thispinisnotconnectedtothesilicon.
DigitalIsolatorVDDASideVDDAPrimarysidesignalpowersupply.
A1–A2I/Osignalchannel1–4.
GNDAPrimarysidesignalground.
DigitalIsolatorVDDBSideVDDBSecondarysidesignalpowersupply.
B1–B2I/Osignalchannel1–4.
GNDBSecondarysidesignalground.
Si88x2xDataSheetPinDescriptionssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|397.
PackageOutlines7.
1PackageOutline:20-PinWideBodySOICThefigurebelowillustratesthepackagedetailsforthe20-pinwide-bodySOICpackage.
Thetablebelowliststhevaluesforthedimen-sionsshownintheillustration.
Figure7.
1.
20-PinWideBodySOICSi88x2xDataSheetPackageOutlinessilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|40Table7.
1.
20-PinWideBodySOICPackageDiagramDimensionsDimensionMinMaxA—2.
65A10.
100.
30A22.
05—b0.
310.
51c0.
200.
33D12.
80BSCE10.
30BSCE17.
50BSCe1.
27BSCL0.
401.
27h0.
250.
75θ0°8°aaa—0.
10bbb—0.
33ccc—0.
10ddd—0.
25eee—0.
10fff—0.
20Notes:1.
Alldimensionsshownareinmillimeters(mm)unlessotherwisenoted.
2.
DimensioningandTolerancingperANSIY14.
5M-1994.
3.
ThisdrawingconformstoJEDECOutlineMS-013,VariationAC.
4.
RecommendedreflowprofileperJEDECJ-STD-020Cspecificationforsmallbody,lead-freecomponents.
Si88x2xDataSheetPackageOutlinessilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|417.
2PackageOutline:16-PinWideBodySOICThefigurebelowillustratesthepackagedetailsfortheSi864xDigitalIsolator.
Thetablebelowliststhevaluesforthedimensionsshownintheillustration.
Figure7.
2.
16-PinWideBodySOICSi88x2xDataSheetPackageOutlinessilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|42Table7.
2.
PackageDiagramDimensionsDimensionMinMaxA—2.
65A10.
100.
30A22.
05—b0.
310.
51c0.
200.
33D10.
30BSCE10.
30BSCE17.
50BSCe1.
27BSCL0.
401.
27h0.
250.
75θ0°8°aaa—0.
10bbb—0.
33ccc—0.
10ddd—0.
25eee—0.
10fff—0.
20Notes:1.
Alldimensionsshownareinmillimeters(mm)unlessotherwisenoted.
2.
DimensioningandTolerancingperANSIY14.
5M-1994.
3.
ThisdrawingconformstoJEDECOutlineMS-013,VariationAA.
4.
RecommendedreflowprofileperJEDECJ-STD-020specificationforsmallbody,lead-freecomponents.
Si88x2xDataSheetPackageOutlinessilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|438.
LandPatterns8.
1LandPattern:20-PinSOICThefigurebelowillustratesthePCBlandpatterndetailsforthe20-pinSOICpackage.
Thetablebelowliststhevaluesforthedimen-sionsshownintheillustration.
Figure8.
1.
20-PinSOICPCBLandPatternTable8.
1.
24-PinSOICPCBLandPatternDimensionsDimensionmmC19.
40E1.
27X10.
60Y11.
90Notes:1.
ThisLandPatternDesignisbasedonIPC-7351designguidelinesforDensityLevelB(MedianLandProtrusion).
2.
AllfeaturesizesshownareatMaximumMaterialCondition(MMC),andacardfabricationtoleranceof0.
05mmisassumed.
Si88x2xDataSheetLandPatternssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|448.
2LandPattern:16-PinWide-BodySOICThefigurebelowillustratestherecommendedlandpatterndetailsfortheSi864xina16-pinwide-bodySOIC.
Thetablebelowliststhevaluesforthedimensionsshownintheillustration.
Figure8.
2.
16-PinSOICLandPatternTable8.
2.
16-PinWideBodySOICLandPatternDimensionsDimensionFeature(mm)C1PadColumnSpacing9.
40EPadRowPitch1.
27X1PadWidth0.
60Y1PadLength1.
90Notes:1.
ThisLandPatternDesignisbasedonIPC-7351patternSOIC127P1032X265-16ANforDensityLevelB(MedianLandProtru-sion).
2.
AllfeaturesizesshownareatMaximumMaterialCondition(MMC)andacardfabricationtoleranceof0.
05mmisassumed.
Si88x2xDataSheetLandPatternssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|459.
TopMarkings9.
1Si88x2xTopMarking:20-PinWideBodySOICFigure9.
1.
20-PinWideBodySOICTable9.
1.
TopMarkingExplanation(20-PinWideBodySOIC)Line1Marking:BasePartNumberOrderingOptionsSee2.
OrderingGuideformoreinformation.
Si88x2=5kVratedchanneldigitalisolatorwithdc-dcconverterX=3,63=Full-featureddc-dcwithintegratedFET6=fullfeatureddc-dcwithexternalFETY=NumberofreversechannelsZ=E,BE=defaulthighB=defaultlowR=C,DC=3.
75kVrmsisolationratingD=5kVrmsisolationratingLine2Marking:YY=YearWW=WorkweekAssignedbytheAssemblyHouse.
Correspondstotheyearandworkweekofthemolddate.
TTTTTT=MfgCodeManufacturingCodefromAssemblyPurchaseOrderform.
Line3Marking:Circle=1.
5mmDiameter(CenterJustified)"e4"Pb-FreeSymbolCountryofOriginISOCodeAbbreviationTW=TaiwanSi88x2xDataSheetTopMarkingssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|469.
2Si88x2xTopMarking:16-PinWideBodySOICFigure9.
2.
16-PinWideBodySOICTable9.
2.
TopMarkingExplanation(16-PinWideBodySOIC)Line1Marking:BasePartNumberOrderingOptionsSee2.
OrderingGuideformoreinformation.
Si88x2=5kVrated2channeldigitalisolatorwithdc-dcconverterX=2,42=dc-dcshutdown4=externalFETY=NumberofreversechannelsZ=E,BE=defaulthighB=defaultlowR=C,DC=3.
75kVrmsisolationratingD=5kVrmsisolationratingLine2Marking:YY=YearWW=WorkweekAssignedbytheAssemblyHouse.
Correspondstotheyearandworkweekofthemolddate.
TTTTTT=MfgCodeManufacturingCodefromAssemblyPurchaseOrderform.
Line3Marking:Circle=1.
5mmDiameter(CenterJustified)"e4"Pb-FreeSymbolCountryofOriginISOCodeAbbreviationTW=TaiwanSi88x2xDataSheetTopMarkingssilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|4710.
RevisionHistoryRev.
1.
0May2020AddedanAutomotiveGradeOPNssubsectiontoChapter2.
OrderingGuideRev.
1.
02March2019CorrectedTransformerSpecificationtableRev.
1.
01November2018UpdatedTransformerSpecificationtableRev.
1.
0February2018UpdatedOrderingGuideTable2.
1UpdatedTransformerTable3.
1UpdatedSpecTable4.
2Addedsection4.
1(Calculatingtotalcurrent)Correctedpin-outsFig6.
1,6.
3Rev.
0.
6May11,2017Updatedformattocurrentstyleguide.
AddedWB-SOIC-16toTable4.
7IECSafetyLimitingValues1onpage27.
UpdatedTable3.
1TransformerSpecificationsonpage15.
Updated5.
5TypicalPerformanceCharacteristics.
UpdatedpinoutsandpindescriptiontableinSection6.
PinDescriptions.
Rev.
0.
5July22,2015Initialrelease.
Si88x2xDataSheetRevisionHistorysilabs.
com|Buildingamoreconnectedworld.
Rev.
1.
03|48