2.7www232sihu
www232sihu 时间:2021-02-21 阅读:()
MICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-2Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comGaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzv02.
0209GeneralDescriptionFeaturesFunctionalDiagramSmallSignalGain:12dBOutputVoltage:upto8Vpk-pkSingle-EndedI/OsHighSpeedPerformance:46GHz3dBBandwidthLowPowerDissipation:0.
9WSmallDieSize:2.
1x1.
70x0.
1mmElectricalSpecifications*,TA=+25°CTypicalApplicationsThisHMC-AUH232isidealfor:40Gb/sLithiumNiobate/MachZenderFiberOpticModulatorsBroadbandGainBlockforTest&MeasurementEquipmentBroadbandGainBlockforRFApplicationsMilitary&SpaceTheHMC-AUH232isaGaAsMMICHEMTDistributedDriverAmplifierdiewhichoperatesbetweenDCand43GHzandprovidesatypical3dBbandwidthof46GHz.
Theamplifierprovides12dBofsmallsignalgainwhilerequiringonly180mAfroma+5Vsupply.
TheHMC-AUH232exhibitsverygoodgainandphaserippleto40GHz,andcanoutputupto8Vpeak-to-peakwithlowjitter,makingitidealforuseinbroadbandwireless,fiberopticcommunicationandtestequipmentapplications.
Theamplifierdieoccupieslessthan3.
6mm2whichfacilitateseasyintegrationintoMulti-Chip-Modules(MCMs).
TheHMC-AUH232requiresexternalbias-teeaswellasoff-chipblockingcomponentsandbypasscapacitorsfortheDCsupplylines.
Agatevoltageadjust,Vgg2isprovidedforlimitedgainadjustment,whileVgg1adjuststhebiascurrentforthedevice.
HMC-AUH232ParameterMin.
Typ.
Max.
UnitsFrequencyRangeDC-43GHzSmallSignalGain0.
5-5.
0GHz1214dB35-45GHz1012.
5dBInputReturnLoss10dBOutputReturnLoss8.
5dBSupplyCurrent180225mA3dBBandwidth4346GHzGainRipple(5to35GHz)±0.
6±1dBGroupDelayVariation[1]0.
5-5.
0GHz±14±20ps5-30GHz±10±11ps30-45GHz±22±25psMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-3Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzParameterMin.
Typ.
Max.
Units10%to90%Rise/FallTime[2]6-12psOutputVoltageLevel[3]8Vp-pAdditivejitter(RMS)0.
4ps1dBOutputGainCompressionPointat20GHz16.
5dBmOutputPower20GHz@Pin=15dBm[4]2222dBm40GHz@Pin=15dBm[4]1719.
5dBmPowerDissipation0.
91.
25WNoiseFigure5GHz5.
4dB10&15GHz4.
2dB20GHz4.
6dB25GHz5.
4dB30GHz8.
3dB35GHz7.
4dB40GHz9.
1dB[1]Measuredwitha1GHzaperture[4]VerifiedatRFon-waferprobe.
Vgg1isadjusteduntilthedraincur-rentis200mAandVgg2=1.
5V.
ThedrainvoltageisappliedthroughtheRFoutputportusingabiasteewith5voltsonthebiasTee.
[2]Measurementlimitedbyrise/falltimeofinputreferencesignal[3]Witha2.
7VP-Pinputsignal*Unlessotherwiseindicated,allmeasurementsarefromprobeddieElectricalSpecifications(Continued)*ParameterSymbolMin.
Typ.
Max.
UnitsPositiveSupplyVoltageVD56VPositiveSupplyCurrentID150180225mARFInputPower1216dBmBiasCurrentAdjustVgg1-1.
5-0.
2VOutputVoltageAdjustVgg201.
52VOperatingTemperatureTOP02585°CPowerDissipationPD0.
91.
25WRecommendedOperatingConditionsParameterPDISSTBASETCHRMTF(W)(°C)(°C)(°C/W)(Hrs)ThermalResistancetobacksideofchip1.
2585145485.
8x108Thermalresistancetobacksideofcarrierusing25.
4umof84-1LMITepoxy1.
2585155561.
8x108ThermalResistancetobacksideofchip1.
25110170483.
9x107Thermalresistancetobacksideofcarrierusing25.
4umof84-1LMITepoxy1.
25110180561.
4x107ThermalCharacteristicsParameterSymbolTyp.
UnitsActivationEnergyEA1.
7eVMediantimetoFailure(MTF)@125°CChannelTemperatureMTF6x109HoursReliabilityCharacteristicsMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-4Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comInputReturnLossvs.
FrequencyOutputReturnLossvs.
FrequencyGainvs.
FrequencyNoiseFigurevs.
FrequencyOutputVoltageDeltavs.
ControlVoltageNote:MeasuredPerformanceCharacteristics(TypicalPer-formanceat25°C)Vgg2=1.
5V,Vdd=5V,Idd=200mA(Measureddataobtainedfromdieinatestfixtureunlessotherwisestated)91011121314151617051015202530354045GAIN(dB)FREQUENCY(GHz)-25-20-15-10-50051015202530354045INPUTRETURNLOSS(dB)FREQUENCY(GHz)456789100510152025303540NOISEFIGURE(dB)FREQUENCY(GHz)-35-30-25-20-15-10-50051015202530354045OUTPUTRETURNLOSS(dB)FREQUENCY(GHz)-1.
4-1.
2-1-0.
8-0.
6-0.
4-0.
200.
60.
70.
80.
911.
11.
21.
31.
41.
5OUPUTVOLTAGEDELTA(Vpp)Vgg2PINVOLTAGEHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-5Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comAbsoluteMaximumRatingsInputReferenceSignalPRBS=231-1,2.
1VInput,Datarateof40Gb/sNote:MeasuredPerformanceCharacteristics(TypicalPerformanceat25°C)(Measureddataobtainedfromdieinatestfixtureunlessotherwisestated)OutputReferenceSignalPRBS=231-1,7.
3VInput,Datarateof40Gb/sDrainBiasVoltage(Vdd)+6VdcGainBiasVoltage(Vgg1)-1.
5to0VdcOutputVoltageAdjust(Vgg2)0to+2VdcRFInputPower+18.
5dBm40Gb/sInputVoltagePk-Pk(Vpp)3VThermalResistance(channeltodiebottom)48°C/WChannelTemperature180°CStorageTemperature-65to+150°COperatingTemperature-55to+110°CELECTROSTATICSENSITIVEDEVICEOBSERVEHANDLINGPRECAUTIONSHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-6Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comOutlineDrawingNOTES:1.
ALLDIMENSIONSAREININCHES[MM].
2.
TYPICALBONDPADIS.
004"SQUARE.
3.
BACKSIDEMETALLIZATION:GOLD.
4.
BACKSIDEMETALISGROUND.
5.
BONDPADMETALLIZATION:GOLD.
6.
CONNECTIONNOTREQUIREDFORUNLABELEDBONDPADS.
7.
OVERALLDIESIZE±.
002"DiePackagingInformation[1]StandardAlternateGP-1(GelPack)[2][1]Refertothe"PackagingInformation"sectionfordiepackagingdimensions.
[2]ForalternatepackaginginformationcontactHittiteMicrowaveCorporation.
HMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-7Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comPadNumberFunctionDescriptionInterfaceSchematic1RES1DCcoupled35Ωtermination.
2Vgg1Gatecontrolforamplifier.
Pleasefollow"MMICAmplifierBiasingProcedure"applicationnote.
Seeassemblyforrequiredexternalcomponents.
5Vgg2GateControlforamplifier.
Limitedgaincontroladjust.
SeeAssemblyDiagramforexternalcomponents.
6Vdd&RFOUTRFoutputandDCBias(vdd)fortheoutputstage.
3RFINDCcoupled.
BlockingCapisneeded.
4RES2ACcoupled50Ωtermination.
PadDescriptionsApplicationCircuitHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-8Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comAssemblyDiagramNote1:DrainBias(Vdd)mustbeappliedthroughabroadbandbiasteeorexternalbiasnetworkHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-9Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comDeviceMounting1mildiameterwirebondsareusedonVgg1andVgg2connectionstothecapacitorsand27Ωresistors.
0.
5milx3milribbonbondsareusedonRFconnectionsCapacitorsandresistorsonVgg1andVgg2areusedtofilterlowfrequency,<800MHz,RFpickup35Ωand50Ωresistorsarefabricatedona5milaluminasubstrateandshouldbesuitableforuseasahighfrequencytermination.
Forbestgainflatnessandgroupdelayvariation,eccosorbcanbeepoxiedonthetransmissionlinecoveringthecenter3/4ofthetransmissionlinelength.
EccosorbmayalsobeplacedpartiallyacrosstheVg1padand35Ωresistorforimprovedgainflatnessandgroupdelayvariation.
(Theinsertionofthetransmissionlinehelpsreducelowfrequency,<10GHz,gainripple)Silver-filledconductiveepoxyisusedfordieattachment(BacksideofthedieshouldbegroundedandtheGNDpadsareconnectedtothebacksidemetalthroughVias)DeviceOperationThesedevicesaresusceptibletodamagefromElectrostaticDischarge.
Properprecautionsshouldbeobservedduringhandling,assemblyandtest.
TheinputtothisdeviceshouldbeAC-coupled.
Toprovidethetypical8Vppoutputvoltageswing,a2.
7VppAC-cou-pledinputvoltageswingisrequired.
Atthisoutputlevel,thedevicewillbein1dBto3dBofcompression.
DevicePowerUpInstructions1.
Groundthedevice2.
BringVgg1to-0.
5V(nodraincurrent)3.
BringVgg2to+1.
5V(nodraincurrent)4.
BringVddto+5V(150mAto225mAdraincurrent)(Initiallythedraincurrentwillrisesharplywithasmalldrainvoltage,butwillwillflattenoutasVddapproaches5V)Vgg1maybevariedbetween-1Vand0Vtoprovidethedesiredeyecrossingpointpercentage(i.
e.
50%crosspoint)andalimitedcrosspointcontrolcapability.
Vddmaybeincreasedto+5.
5Vifrequiredtoachievegreateroutputvoltageswing.
Vgg2maybeadjustedbetween+1.
5Vand+0.
3Vtovarytheoutputvoltageswing.
DevicePowerDownInstructions1.
Reversethesequenceidentifiedaboveinsteps1through4.
HMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-10Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comMounting&BondingTechniquesforMillimeterwaveGaAsMMICsThedieshouldbeattacheddirectlytothegroundplaneeutecticallyorwithconductiveepoxy(seeHMCgeneralHandling,Mounting,BondingNote).
50OhmMicrostriptransmissionlineson0.
127mm(5mil)thickaluminathinfilmsubstratesarerecommendedforbringingRFtoandfromthechip(Figure1).
If0.
254mm(10mil)thickaluminathinfilmsubstratesmustbeused,thedieshouldberaised0.
150mm(6mils)sothatthesurfaceofthedieiscoplanarwiththesurfaceofthesubstrate.
Onewaytoaccom-plishthisistoattachthe0.
102mm(4mil)thickdietoa0.
150mm(6mil)thickmolybdenumheatspreader(moly-tab)whichisthenattachedtothegroundplane(Figure2).
Microstripsubstratesshouldbeplacedasclosetothedieaspossibleinordertominimizebondwirelength.
Typicaldie-to-substratespacingis0.
076mmto0.
152mm(3to6mils).
HandlingPrecautionsFollowtheseprecautionstoavoidpermanentdamage.
Storage:AllbaredieareplacedineitherWaffleorGelbasedESDprotec-tivecontainers,andthensealedinanESDprotectivebagforshipment.
OncethesealedESDprotectivebaghasbeenopened,alldieshouldbestoredinadrynitrogenenvironment.
Cleanliness:Handlethechipsinacleanenvironment.
DONOTattempttocleanthechipusingliquidcleaningsystems.
StaticSensitivity:FollowESDprecautionstoprotectagainstESDstrikes.
Transients:Suppressinstrumentandbiassupplytransientswhilebiasisapplied.
Useshieldedsignalandbiascablestominimizeinductivepick-up.
GeneralHandling:Handlethechipalongtheedgeswithavacuumcolletorwithasharppairofbenttweezers.
Thesurfaceofthechiphasfragileairbridgesandshouldnotbetouchedwithvacuumcollet,tweezers,orfingers.
MountingThechipisback-metallizedandcanbediemountedwithAuSneutecticpreformsorwithelectricallyconductiveepoxy.
Themountingsurfaceshouldbecleanandflat.
EutecticDieAttach:A80/20goldtinpreformisrecommendedwithaworksurfacetemperatureof255°Candatooltemperatureof265°C.
Whenhot90/10nitrogen/hydrogengasisapplied,tooltiptemperatureshouldbe290°C.
DONOTexposethechiptoatemperaturegreaterthan320°Cformorethan20seconds.
Nomorethan3secondsofscrubbingshouldberequiredforattachment.
EpoxyDieAttach:Applyaminimumamountofepoxytothemountingsurfacesothatathinepoxyfilletisobservedaroundtheperimeterofthechiponceitisplacedintoposition.
Cureepoxyperthemanufacturer'sschedule.
WireBondingRFbondsmadewith0.
003"x0.
0005"ribbonarerecommended.
Thesebondsshouldbethermosonicallybondedwithaforceof40-60grams.
DCbondsof0.
001"(0.
025mm)diameter,thermosonicallybonded,arerecommended.
Ballbondsshouldbemadewithaforceof40-50gramsandwedgebondsat18-22grams.
Allbondsshouldbemadewithanominalstagetemperatureof150°C.
Aminimumamountofultrasonicenergyshouldbeappliedtoachievereliablebonds.
Allbondsshouldbeasshortaspossible,lessthan12mils(0.
31mm).
0.
102mm(0.
004")ThickGaAsMMICRibbonBond0.
076mm(0.
003")RFGroundPlane0.
127mm(0.
005")ThickAluminaThinFilmSubstrateFigure1.
0.
102mm(0.
004")ThickGaAsMMICRibbonBond0.
076mm(0.
003")RFGroundPlane0.
150mm(0.
005")ThickMolyTab0.
254mm(0.
010"ThickAluminaThinFilmSubstrateFigure2.
HMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-11Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comNotesHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHz
hittite.
comGaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzv02.
0209GeneralDescriptionFeaturesFunctionalDiagramSmallSignalGain:12dBOutputVoltage:upto8Vpk-pkSingle-EndedI/OsHighSpeedPerformance:46GHz3dBBandwidthLowPowerDissipation:0.
9WSmallDieSize:2.
1x1.
70x0.
1mmElectricalSpecifications*,TA=+25°CTypicalApplicationsThisHMC-AUH232isidealfor:40Gb/sLithiumNiobate/MachZenderFiberOpticModulatorsBroadbandGainBlockforTest&MeasurementEquipmentBroadbandGainBlockforRFApplicationsMilitary&SpaceTheHMC-AUH232isaGaAsMMICHEMTDistributedDriverAmplifierdiewhichoperatesbetweenDCand43GHzandprovidesatypical3dBbandwidthof46GHz.
Theamplifierprovides12dBofsmallsignalgainwhilerequiringonly180mAfroma+5Vsupply.
TheHMC-AUH232exhibitsverygoodgainandphaserippleto40GHz,andcanoutputupto8Vpeak-to-peakwithlowjitter,makingitidealforuseinbroadbandwireless,fiberopticcommunicationandtestequipmentapplications.
Theamplifierdieoccupieslessthan3.
6mm2whichfacilitateseasyintegrationintoMulti-Chip-Modules(MCMs).
TheHMC-AUH232requiresexternalbias-teeaswellasoff-chipblockingcomponentsandbypasscapacitorsfortheDCsupplylines.
Agatevoltageadjust,Vgg2isprovidedforlimitedgainadjustment,whileVgg1adjuststhebiascurrentforthedevice.
HMC-AUH232ParameterMin.
Typ.
Max.
UnitsFrequencyRangeDC-43GHzSmallSignalGain0.
5-5.
0GHz1214dB35-45GHz1012.
5dBInputReturnLoss10dBOutputReturnLoss8.
5dBSupplyCurrent180225mA3dBBandwidth4346GHzGainRipple(5to35GHz)±0.
6±1dBGroupDelayVariation[1]0.
5-5.
0GHz±14±20ps5-30GHz±10±11ps30-45GHz±22±25psMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-3Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzParameterMin.
Typ.
Max.
Units10%to90%Rise/FallTime[2]6-12psOutputVoltageLevel[3]8Vp-pAdditivejitter(RMS)0.
4ps1dBOutputGainCompressionPointat20GHz16.
5dBmOutputPower20GHz@Pin=15dBm[4]2222dBm40GHz@Pin=15dBm[4]1719.
5dBmPowerDissipation0.
91.
25WNoiseFigure5GHz5.
4dB10&15GHz4.
2dB20GHz4.
6dB25GHz5.
4dB30GHz8.
3dB35GHz7.
4dB40GHz9.
1dB[1]Measuredwitha1GHzaperture[4]VerifiedatRFon-waferprobe.
Vgg1isadjusteduntilthedraincur-rentis200mAandVgg2=1.
5V.
ThedrainvoltageisappliedthroughtheRFoutputportusingabiasteewith5voltsonthebiasTee.
[2]Measurementlimitedbyrise/falltimeofinputreferencesignal[3]Witha2.
7VP-Pinputsignal*Unlessotherwiseindicated,allmeasurementsarefromprobeddieElectricalSpecifications(Continued)*ParameterSymbolMin.
Typ.
Max.
UnitsPositiveSupplyVoltageVD56VPositiveSupplyCurrentID150180225mARFInputPower1216dBmBiasCurrentAdjustVgg1-1.
5-0.
2VOutputVoltageAdjustVgg201.
52VOperatingTemperatureTOP02585°CPowerDissipationPD0.
91.
25WRecommendedOperatingConditionsParameterPDISSTBASETCHRMTF(W)(°C)(°C)(°C/W)(Hrs)ThermalResistancetobacksideofchip1.
2585145485.
8x108Thermalresistancetobacksideofcarrierusing25.
4umof84-1LMITepoxy1.
2585155561.
8x108ThermalResistancetobacksideofchip1.
25110170483.
9x107Thermalresistancetobacksideofcarrierusing25.
4umof84-1LMITepoxy1.
25110180561.
4x107ThermalCharacteristicsParameterSymbolTyp.
UnitsActivationEnergyEA1.
7eVMediantimetoFailure(MTF)@125°CChannelTemperatureMTF6x109HoursReliabilityCharacteristicsMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-4Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comInputReturnLossvs.
FrequencyOutputReturnLossvs.
FrequencyGainvs.
FrequencyNoiseFigurevs.
FrequencyOutputVoltageDeltavs.
ControlVoltageNote:MeasuredPerformanceCharacteristics(TypicalPer-formanceat25°C)Vgg2=1.
5V,Vdd=5V,Idd=200mA(Measureddataobtainedfromdieinatestfixtureunlessotherwisestated)91011121314151617051015202530354045GAIN(dB)FREQUENCY(GHz)-25-20-15-10-50051015202530354045INPUTRETURNLOSS(dB)FREQUENCY(GHz)456789100510152025303540NOISEFIGURE(dB)FREQUENCY(GHz)-35-30-25-20-15-10-50051015202530354045OUTPUTRETURNLOSS(dB)FREQUENCY(GHz)-1.
4-1.
2-1-0.
8-0.
6-0.
4-0.
200.
60.
70.
80.
911.
11.
21.
31.
41.
5OUPUTVOLTAGEDELTA(Vpp)Vgg2PINVOLTAGEHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-5Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comAbsoluteMaximumRatingsInputReferenceSignalPRBS=231-1,2.
1VInput,Datarateof40Gb/sNote:MeasuredPerformanceCharacteristics(TypicalPerformanceat25°C)(Measureddataobtainedfromdieinatestfixtureunlessotherwisestated)OutputReferenceSignalPRBS=231-1,7.
3VInput,Datarateof40Gb/sDrainBiasVoltage(Vdd)+6VdcGainBiasVoltage(Vgg1)-1.
5to0VdcOutputVoltageAdjust(Vgg2)0to+2VdcRFInputPower+18.
5dBm40Gb/sInputVoltagePk-Pk(Vpp)3VThermalResistance(channeltodiebottom)48°C/WChannelTemperature180°CStorageTemperature-65to+150°COperatingTemperature-55to+110°CELECTROSTATICSENSITIVEDEVICEOBSERVEHANDLINGPRECAUTIONSHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-6Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comOutlineDrawingNOTES:1.
ALLDIMENSIONSAREININCHES[MM].
2.
TYPICALBONDPADIS.
004"SQUARE.
3.
BACKSIDEMETALLIZATION:GOLD.
4.
BACKSIDEMETALISGROUND.
5.
BONDPADMETALLIZATION:GOLD.
6.
CONNECTIONNOTREQUIREDFORUNLABELEDBONDPADS.
7.
OVERALLDIESIZE±.
002"DiePackagingInformation[1]StandardAlternateGP-1(GelPack)[2][1]Refertothe"PackagingInformation"sectionfordiepackagingdimensions.
[2]ForalternatepackaginginformationcontactHittiteMicrowaveCorporation.
HMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-7Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comPadNumberFunctionDescriptionInterfaceSchematic1RES1DCcoupled35Ωtermination.
2Vgg1Gatecontrolforamplifier.
Pleasefollow"MMICAmplifierBiasingProcedure"applicationnote.
Seeassemblyforrequiredexternalcomponents.
5Vgg2GateControlforamplifier.
Limitedgaincontroladjust.
SeeAssemblyDiagramforexternalcomponents.
6Vdd&RFOUTRFoutputandDCBias(vdd)fortheoutputstage.
3RFINDCcoupled.
BlockingCapisneeded.
4RES2ACcoupled50Ωtermination.
PadDescriptionsApplicationCircuitHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-8Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comAssemblyDiagramNote1:DrainBias(Vdd)mustbeappliedthroughabroadbandbiasteeorexternalbiasnetworkHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-9Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comDeviceMounting1mildiameterwirebondsareusedonVgg1andVgg2connectionstothecapacitorsand27Ωresistors.
0.
5milx3milribbonbondsareusedonRFconnectionsCapacitorsandresistorsonVgg1andVgg2areusedtofilterlowfrequency,<800MHz,RFpickup35Ωand50Ωresistorsarefabricatedona5milaluminasubstrateandshouldbesuitableforuseasahighfrequencytermination.
Forbestgainflatnessandgroupdelayvariation,eccosorbcanbeepoxiedonthetransmissionlinecoveringthecenter3/4ofthetransmissionlinelength.
EccosorbmayalsobeplacedpartiallyacrosstheVg1padand35Ωresistorforimprovedgainflatnessandgroupdelayvariation.
(Theinsertionofthetransmissionlinehelpsreducelowfrequency,<10GHz,gainripple)Silver-filledconductiveepoxyisusedfordieattachment(BacksideofthedieshouldbegroundedandtheGNDpadsareconnectedtothebacksidemetalthroughVias)DeviceOperationThesedevicesaresusceptibletodamagefromElectrostaticDischarge.
Properprecautionsshouldbeobservedduringhandling,assemblyandtest.
TheinputtothisdeviceshouldbeAC-coupled.
Toprovidethetypical8Vppoutputvoltageswing,a2.
7VppAC-cou-pledinputvoltageswingisrequired.
Atthisoutputlevel,thedevicewillbein1dBto3dBofcompression.
DevicePowerUpInstructions1.
Groundthedevice2.
BringVgg1to-0.
5V(nodraincurrent)3.
BringVgg2to+1.
5V(nodraincurrent)4.
BringVddto+5V(150mAto225mAdraincurrent)(Initiallythedraincurrentwillrisesharplywithasmalldrainvoltage,butwillwillflattenoutasVddapproaches5V)Vgg1maybevariedbetween-1Vand0Vtoprovidethedesiredeyecrossingpointpercentage(i.
e.
50%crosspoint)andalimitedcrosspointcontrolcapability.
Vddmaybeincreasedto+5.
5Vifrequiredtoachievegreateroutputvoltageswing.
Vgg2maybeadjustedbetween+1.
5Vand+0.
3Vtovarytheoutputvoltageswing.
DevicePowerDownInstructions1.
Reversethesequenceidentifiedaboveinsteps1through4.
HMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-10Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comMounting&BondingTechniquesforMillimeterwaveGaAsMMICsThedieshouldbeattacheddirectlytothegroundplaneeutecticallyorwithconductiveepoxy(seeHMCgeneralHandling,Mounting,BondingNote).
50OhmMicrostriptransmissionlineson0.
127mm(5mil)thickaluminathinfilmsubstratesarerecommendedforbringingRFtoandfromthechip(Figure1).
If0.
254mm(10mil)thickaluminathinfilmsubstratesmustbeused,thedieshouldberaised0.
150mm(6mils)sothatthesurfaceofthedieiscoplanarwiththesurfaceofthesubstrate.
Onewaytoaccom-plishthisistoattachthe0.
102mm(4mil)thickdietoa0.
150mm(6mil)thickmolybdenumheatspreader(moly-tab)whichisthenattachedtothegroundplane(Figure2).
Microstripsubstratesshouldbeplacedasclosetothedieaspossibleinordertominimizebondwirelength.
Typicaldie-to-substratespacingis0.
076mmto0.
152mm(3to6mils).
HandlingPrecautionsFollowtheseprecautionstoavoidpermanentdamage.
Storage:AllbaredieareplacedineitherWaffleorGelbasedESDprotec-tivecontainers,andthensealedinanESDprotectivebagforshipment.
OncethesealedESDprotectivebaghasbeenopened,alldieshouldbestoredinadrynitrogenenvironment.
Cleanliness:Handlethechipsinacleanenvironment.
DONOTattempttocleanthechipusingliquidcleaningsystems.
StaticSensitivity:FollowESDprecautionstoprotectagainstESDstrikes.
Transients:Suppressinstrumentandbiassupplytransientswhilebiasisapplied.
Useshieldedsignalandbiascablestominimizeinductivepick-up.
GeneralHandling:Handlethechipalongtheedgeswithavacuumcolletorwithasharppairofbenttweezers.
Thesurfaceofthechiphasfragileairbridgesandshouldnotbetouchedwithvacuumcollet,tweezers,orfingers.
MountingThechipisback-metallizedandcanbediemountedwithAuSneutecticpreformsorwithelectricallyconductiveepoxy.
Themountingsurfaceshouldbecleanandflat.
EutecticDieAttach:A80/20goldtinpreformisrecommendedwithaworksurfacetemperatureof255°Candatooltemperatureof265°C.
Whenhot90/10nitrogen/hydrogengasisapplied,tooltiptemperatureshouldbe290°C.
DONOTexposethechiptoatemperaturegreaterthan320°Cformorethan20seconds.
Nomorethan3secondsofscrubbingshouldberequiredforattachment.
EpoxyDieAttach:Applyaminimumamountofepoxytothemountingsurfacesothatathinepoxyfilletisobservedaroundtheperimeterofthechiponceitisplacedintoposition.
Cureepoxyperthemanufacturer'sschedule.
WireBondingRFbondsmadewith0.
003"x0.
0005"ribbonarerecommended.
Thesebondsshouldbethermosonicallybondedwithaforceof40-60grams.
DCbondsof0.
001"(0.
025mm)diameter,thermosonicallybonded,arerecommended.
Ballbondsshouldbemadewithaforceof40-50gramsandwedgebondsat18-22grams.
Allbondsshouldbemadewithanominalstagetemperatureof150°C.
Aminimumamountofultrasonicenergyshouldbeappliedtoachievereliablebonds.
Allbondsshouldbeasshortaspossible,lessthan12mils(0.
31mm).
0.
102mm(0.
004")ThickGaAsMMICRibbonBond0.
076mm(0.
003")RFGroundPlane0.
127mm(0.
005")ThickAluminaThinFilmSubstrateFigure1.
0.
102mm(0.
004")ThickGaAsMMICRibbonBond0.
076mm(0.
003")RFGroundPlane0.
150mm(0.
005")ThickMolyTab0.
254mm(0.
010"ThickAluminaThinFilmSubstrateFigure2.
HMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-11Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comNotesHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHz
- 2.7www232sihu相关文档
- RTSwww232sihu
- notedwww232sihu
- 光纤www232sihu
- pinwww232sihu
- 波仕卡:RS-232/RS-485
- 转换www232sihu
HostHatch(15美元)大硬盘VPS,香港NVMe,美国、英国、荷兰、印度、挪威、澳大利亚
HostHatch在当地时间7月30日发布了一系列的促销套餐，涉及亚洲和欧美的多个地区机房，最低年付15美元起，一次买2年还能免费升级双倍资源。商家成立于2011年，提供基于KVM架构的VPS主机，数据中心包括中国香港、美国、英国、荷兰、印度、挪威、澳大利亚等国家的十几个地区机房。官方网站：https://hosthatch.com/NVMe VPS(香港/悉尼)1 CPU core (12.5%...
提速啦：美国多IP站群云服务器 8核8G 10M带宽 7IP 88元/月
提速啦（www.tisula.com）是赣州王成璟网络科技有限公司旗下云服务器品牌，目前拥有在籍员工40人左右，社保在籍员工30人+，是正规的国内拥有IDC ICP ISP CDN 云牌照资质商家，2018-2021年连续4年获得CTG机房顶级金牌代理商荣誉 2021年赣州市于都县创业大赛三等奖，2020年于都电子商务示范企业，2021年于都县电子商务融合推广大使。资源优势介绍：Ceranetwo...
spinservers春节优惠：$149/月10Gbps圣何塞服务器-2*E5-2630Lv3 CPU,256G内存,2*1.6T SSD硬盘
spinservers是Majestic Hosting Solutions LLC旗下站点，商家提供国外服务器租用和Hybrid Dedicated等产品，数据中心包括美国达拉斯和圣何塞机房，机器默认10Gbps端口带宽，高配置硬件，支持使用PayPal、信用卡、支付宝或者微信等付款方式。农历春节之际，商家推出了几款特别促销配置，最低双路E5-2630Lv3机器每月149美元起，下面列出几款机器...
www232sihu为你推荐
-
ptrc语言for语句中(*ptr)和*ptr有什么区别，为什么要加括号，不加括号会淘宝客推广淘宝客推广有哪些途径站长故事爱迪生的故事ghostxp3ghost xp sp3 和 windows xp3有啥区别公章制作制作公章尺寸标准大小，字体，字号？工信部备案怎样在工信部进行域名备案?要详细如何建立一个网站如何建立一个网站机械键盘轴打游戏用机械键盘到底什么轴好？电子商务网站模板电子商务网站策划书小米手柄小米蓝牙游戏手柄怎么连接游戏