2.7www232sihu
www232sihu 时间:2021-02-21 阅读:()
MICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-2Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comGaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzv02.
0209GeneralDescriptionFeaturesFunctionalDiagramSmallSignalGain:12dBOutputVoltage:upto8Vpk-pkSingle-EndedI/OsHighSpeedPerformance:46GHz3dBBandwidthLowPowerDissipation:0.
9WSmallDieSize:2.
1x1.
70x0.
1mmElectricalSpecifications*,TA=+25°CTypicalApplicationsThisHMC-AUH232isidealfor:40Gb/sLithiumNiobate/MachZenderFiberOpticModulatorsBroadbandGainBlockforTest&MeasurementEquipmentBroadbandGainBlockforRFApplicationsMilitary&SpaceTheHMC-AUH232isaGaAsMMICHEMTDistributedDriverAmplifierdiewhichoperatesbetweenDCand43GHzandprovidesatypical3dBbandwidthof46GHz.
Theamplifierprovides12dBofsmallsignalgainwhilerequiringonly180mAfroma+5Vsupply.
TheHMC-AUH232exhibitsverygoodgainandphaserippleto40GHz,andcanoutputupto8Vpeak-to-peakwithlowjitter,makingitidealforuseinbroadbandwireless,fiberopticcommunicationandtestequipmentapplications.
Theamplifierdieoccupieslessthan3.
6mm2whichfacilitateseasyintegrationintoMulti-Chip-Modules(MCMs).
TheHMC-AUH232requiresexternalbias-teeaswellasoff-chipblockingcomponentsandbypasscapacitorsfortheDCsupplylines.
Agatevoltageadjust,Vgg2isprovidedforlimitedgainadjustment,whileVgg1adjuststhebiascurrentforthedevice.
HMC-AUH232ParameterMin.
Typ.
Max.
UnitsFrequencyRangeDC-43GHzSmallSignalGain0.
5-5.
0GHz1214dB35-45GHz1012.
5dBInputReturnLoss10dBOutputReturnLoss8.
5dBSupplyCurrent180225mA3dBBandwidth4346GHzGainRipple(5to35GHz)±0.
6±1dBGroupDelayVariation[1]0.
5-5.
0GHz±14±20ps5-30GHz±10±11ps30-45GHz±22±25psMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-3Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzParameterMin.
Typ.
Max.
Units10%to90%Rise/FallTime[2]6-12psOutputVoltageLevel[3]8Vp-pAdditivejitter(RMS)0.
4ps1dBOutputGainCompressionPointat20GHz16.
5dBmOutputPower20GHz@Pin=15dBm[4]2222dBm40GHz@Pin=15dBm[4]1719.
5dBmPowerDissipation0.
91.
25WNoiseFigure5GHz5.
4dB10&15GHz4.
2dB20GHz4.
6dB25GHz5.
4dB30GHz8.
3dB35GHz7.
4dB40GHz9.
1dB[1]Measuredwitha1GHzaperture[4]VerifiedatRFon-waferprobe.
Vgg1isadjusteduntilthedraincur-rentis200mAandVgg2=1.
5V.
ThedrainvoltageisappliedthroughtheRFoutputportusingabiasteewith5voltsonthebiasTee.
[2]Measurementlimitedbyrise/falltimeofinputreferencesignal[3]Witha2.
7VP-Pinputsignal*Unlessotherwiseindicated,allmeasurementsarefromprobeddieElectricalSpecifications(Continued)*ParameterSymbolMin.
Typ.
Max.
UnitsPositiveSupplyVoltageVD56VPositiveSupplyCurrentID150180225mARFInputPower1216dBmBiasCurrentAdjustVgg1-1.
5-0.
2VOutputVoltageAdjustVgg201.
52VOperatingTemperatureTOP02585°CPowerDissipationPD0.
91.
25WRecommendedOperatingConditionsParameterPDISSTBASETCHRMTF(W)(°C)(°C)(°C/W)(Hrs)ThermalResistancetobacksideofchip1.
2585145485.
8x108Thermalresistancetobacksideofcarrierusing25.
4umof84-1LMITepoxy1.
2585155561.
8x108ThermalResistancetobacksideofchip1.
25110170483.
9x107Thermalresistancetobacksideofcarrierusing25.
4umof84-1LMITepoxy1.
25110180561.
4x107ThermalCharacteristicsParameterSymbolTyp.
UnitsActivationEnergyEA1.
7eVMediantimetoFailure(MTF)@125°CChannelTemperatureMTF6x109HoursReliabilityCharacteristicsMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-4Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comInputReturnLossvs.
FrequencyOutputReturnLossvs.
FrequencyGainvs.
FrequencyNoiseFigurevs.
FrequencyOutputVoltageDeltavs.
ControlVoltageNote:MeasuredPerformanceCharacteristics(TypicalPer-formanceat25°C)Vgg2=1.
5V,Vdd=5V,Idd=200mA(Measureddataobtainedfromdieinatestfixtureunlessotherwisestated)91011121314151617051015202530354045GAIN(dB)FREQUENCY(GHz)-25-20-15-10-50051015202530354045INPUTRETURNLOSS(dB)FREQUENCY(GHz)456789100510152025303540NOISEFIGURE(dB)FREQUENCY(GHz)-35-30-25-20-15-10-50051015202530354045OUTPUTRETURNLOSS(dB)FREQUENCY(GHz)-1.
4-1.
2-1-0.
8-0.
6-0.
4-0.
200.
60.
70.
80.
911.
11.
21.
31.
41.
5OUPUTVOLTAGEDELTA(Vpp)Vgg2PINVOLTAGEHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-5Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comAbsoluteMaximumRatingsInputReferenceSignalPRBS=231-1,2.
1VInput,Datarateof40Gb/sNote:MeasuredPerformanceCharacteristics(TypicalPerformanceat25°C)(Measureddataobtainedfromdieinatestfixtureunlessotherwisestated)OutputReferenceSignalPRBS=231-1,7.
3VInput,Datarateof40Gb/sDrainBiasVoltage(Vdd)+6VdcGainBiasVoltage(Vgg1)-1.
5to0VdcOutputVoltageAdjust(Vgg2)0to+2VdcRFInputPower+18.
5dBm40Gb/sInputVoltagePk-Pk(Vpp)3VThermalResistance(channeltodiebottom)48°C/WChannelTemperature180°CStorageTemperature-65to+150°COperatingTemperature-55to+110°CELECTROSTATICSENSITIVEDEVICEOBSERVEHANDLINGPRECAUTIONSHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-6Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comOutlineDrawingNOTES:1.
ALLDIMENSIONSAREININCHES[MM].
2.
TYPICALBONDPADIS.
004"SQUARE.
3.
BACKSIDEMETALLIZATION:GOLD.
4.
BACKSIDEMETALISGROUND.
5.
BONDPADMETALLIZATION:GOLD.
6.
CONNECTIONNOTREQUIREDFORUNLABELEDBONDPADS.
7.
OVERALLDIESIZE±.
002"DiePackagingInformation[1]StandardAlternateGP-1(GelPack)[2][1]Refertothe"PackagingInformation"sectionfordiepackagingdimensions.
[2]ForalternatepackaginginformationcontactHittiteMicrowaveCorporation.
HMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-7Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comPadNumberFunctionDescriptionInterfaceSchematic1RES1DCcoupled35Ωtermination.
2Vgg1Gatecontrolforamplifier.
Pleasefollow"MMICAmplifierBiasingProcedure"applicationnote.
Seeassemblyforrequiredexternalcomponents.
5Vgg2GateControlforamplifier.
Limitedgaincontroladjust.
SeeAssemblyDiagramforexternalcomponents.
6Vdd&RFOUTRFoutputandDCBias(vdd)fortheoutputstage.
3RFINDCcoupled.
BlockingCapisneeded.
4RES2ACcoupled50Ωtermination.
PadDescriptionsApplicationCircuitHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-8Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comAssemblyDiagramNote1:DrainBias(Vdd)mustbeappliedthroughabroadbandbiasteeorexternalbiasnetworkHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-9Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comDeviceMounting1mildiameterwirebondsareusedonVgg1andVgg2connectionstothecapacitorsand27Ωresistors.
0.
5milx3milribbonbondsareusedonRFconnectionsCapacitorsandresistorsonVgg1andVgg2areusedtofilterlowfrequency,<800MHz,RFpickup35Ωand50Ωresistorsarefabricatedona5milaluminasubstrateandshouldbesuitableforuseasahighfrequencytermination.
Forbestgainflatnessandgroupdelayvariation,eccosorbcanbeepoxiedonthetransmissionlinecoveringthecenter3/4ofthetransmissionlinelength.
EccosorbmayalsobeplacedpartiallyacrosstheVg1padand35Ωresistorforimprovedgainflatnessandgroupdelayvariation.
(Theinsertionofthetransmissionlinehelpsreducelowfrequency,<10GHz,gainripple)Silver-filledconductiveepoxyisusedfordieattachment(BacksideofthedieshouldbegroundedandtheGNDpadsareconnectedtothebacksidemetalthroughVias)DeviceOperationThesedevicesaresusceptibletodamagefromElectrostaticDischarge.
Properprecautionsshouldbeobservedduringhandling,assemblyandtest.
TheinputtothisdeviceshouldbeAC-coupled.
Toprovidethetypical8Vppoutputvoltageswing,a2.
7VppAC-cou-pledinputvoltageswingisrequired.
Atthisoutputlevel,thedevicewillbein1dBto3dBofcompression.
DevicePowerUpInstructions1.
Groundthedevice2.
BringVgg1to-0.
5V(nodraincurrent)3.
BringVgg2to+1.
5V(nodraincurrent)4.
BringVddto+5V(150mAto225mAdraincurrent)(Initiallythedraincurrentwillrisesharplywithasmalldrainvoltage,butwillwillflattenoutasVddapproaches5V)Vgg1maybevariedbetween-1Vand0Vtoprovidethedesiredeyecrossingpointpercentage(i.
e.
50%crosspoint)andalimitedcrosspointcontrolcapability.
Vddmaybeincreasedto+5.
5Vifrequiredtoachievegreateroutputvoltageswing.
Vgg2maybeadjustedbetween+1.
5Vand+0.
3Vtovarytheoutputvoltageswing.
DevicePowerDownInstructions1.
Reversethesequenceidentifiedaboveinsteps1through4.
HMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-10Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comMounting&BondingTechniquesforMillimeterwaveGaAsMMICsThedieshouldbeattacheddirectlytothegroundplaneeutecticallyorwithconductiveepoxy(seeHMCgeneralHandling,Mounting,BondingNote).
50OhmMicrostriptransmissionlineson0.
127mm(5mil)thickaluminathinfilmsubstratesarerecommendedforbringingRFtoandfromthechip(Figure1).
If0.
254mm(10mil)thickaluminathinfilmsubstratesmustbeused,thedieshouldberaised0.
150mm(6mils)sothatthesurfaceofthedieiscoplanarwiththesurfaceofthesubstrate.
Onewaytoaccom-plishthisistoattachthe0.
102mm(4mil)thickdietoa0.
150mm(6mil)thickmolybdenumheatspreader(moly-tab)whichisthenattachedtothegroundplane(Figure2).
Microstripsubstratesshouldbeplacedasclosetothedieaspossibleinordertominimizebondwirelength.
Typicaldie-to-substratespacingis0.
076mmto0.
152mm(3to6mils).
HandlingPrecautionsFollowtheseprecautionstoavoidpermanentdamage.
Storage:AllbaredieareplacedineitherWaffleorGelbasedESDprotec-tivecontainers,andthensealedinanESDprotectivebagforshipment.
OncethesealedESDprotectivebaghasbeenopened,alldieshouldbestoredinadrynitrogenenvironment.
Cleanliness:Handlethechipsinacleanenvironment.
DONOTattempttocleanthechipusingliquidcleaningsystems.
StaticSensitivity:FollowESDprecautionstoprotectagainstESDstrikes.
Transients:Suppressinstrumentandbiassupplytransientswhilebiasisapplied.
Useshieldedsignalandbiascablestominimizeinductivepick-up.
GeneralHandling:Handlethechipalongtheedgeswithavacuumcolletorwithasharppairofbenttweezers.
Thesurfaceofthechiphasfragileairbridgesandshouldnotbetouchedwithvacuumcollet,tweezers,orfingers.
MountingThechipisback-metallizedandcanbediemountedwithAuSneutecticpreformsorwithelectricallyconductiveepoxy.
Themountingsurfaceshouldbecleanandflat.
EutecticDieAttach:A80/20goldtinpreformisrecommendedwithaworksurfacetemperatureof255°Candatooltemperatureof265°C.
Whenhot90/10nitrogen/hydrogengasisapplied,tooltiptemperatureshouldbe290°C.
DONOTexposethechiptoatemperaturegreaterthan320°Cformorethan20seconds.
Nomorethan3secondsofscrubbingshouldberequiredforattachment.
EpoxyDieAttach:Applyaminimumamountofepoxytothemountingsurfacesothatathinepoxyfilletisobservedaroundtheperimeterofthechiponceitisplacedintoposition.
Cureepoxyperthemanufacturer'sschedule.
WireBondingRFbondsmadewith0.
003"x0.
0005"ribbonarerecommended.
Thesebondsshouldbethermosonicallybondedwithaforceof40-60grams.
DCbondsof0.
001"(0.
025mm)diameter,thermosonicallybonded,arerecommended.
Ballbondsshouldbemadewithaforceof40-50gramsandwedgebondsat18-22grams.
Allbondsshouldbemadewithanominalstagetemperatureof150°C.
Aminimumamountofultrasonicenergyshouldbeappliedtoachievereliablebonds.
Allbondsshouldbeasshortaspossible,lessthan12mils(0.
31mm).
0.
102mm(0.
004")ThickGaAsMMICRibbonBond0.
076mm(0.
003")RFGroundPlane0.
127mm(0.
005")ThickAluminaThinFilmSubstrateFigure1.
0.
102mm(0.
004")ThickGaAsMMICRibbonBond0.
076mm(0.
003")RFGroundPlane0.
150mm(0.
005")ThickMolyTab0.
254mm(0.
010"ThickAluminaThinFilmSubstrateFigure2.
HMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-11Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comNotesHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHz
hittite.
comGaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzv02.
0209GeneralDescriptionFeaturesFunctionalDiagramSmallSignalGain:12dBOutputVoltage:upto8Vpk-pkSingle-EndedI/OsHighSpeedPerformance:46GHz3dBBandwidthLowPowerDissipation:0.
9WSmallDieSize:2.
1x1.
70x0.
1mmElectricalSpecifications*,TA=+25°CTypicalApplicationsThisHMC-AUH232isidealfor:40Gb/sLithiumNiobate/MachZenderFiberOpticModulatorsBroadbandGainBlockforTest&MeasurementEquipmentBroadbandGainBlockforRFApplicationsMilitary&SpaceTheHMC-AUH232isaGaAsMMICHEMTDistributedDriverAmplifierdiewhichoperatesbetweenDCand43GHzandprovidesatypical3dBbandwidthof46GHz.
Theamplifierprovides12dBofsmallsignalgainwhilerequiringonly180mAfroma+5Vsupply.
TheHMC-AUH232exhibitsverygoodgainandphaserippleto40GHz,andcanoutputupto8Vpeak-to-peakwithlowjitter,makingitidealforuseinbroadbandwireless,fiberopticcommunicationandtestequipmentapplications.
Theamplifierdieoccupieslessthan3.
6mm2whichfacilitateseasyintegrationintoMulti-Chip-Modules(MCMs).
TheHMC-AUH232requiresexternalbias-teeaswellasoff-chipblockingcomponentsandbypasscapacitorsfortheDCsupplylines.
Agatevoltageadjust,Vgg2isprovidedforlimitedgainadjustment,whileVgg1adjuststhebiascurrentforthedevice.
HMC-AUH232ParameterMin.
Typ.
Max.
UnitsFrequencyRangeDC-43GHzSmallSignalGain0.
5-5.
0GHz1214dB35-45GHz1012.
5dBInputReturnLoss10dBOutputReturnLoss8.
5dBSupplyCurrent180225mA3dBBandwidth4346GHzGainRipple(5to35GHz)±0.
6±1dBGroupDelayVariation[1]0.
5-5.
0GHz±14±20ps5-30GHz±10±11ps30-45GHz±22±25psMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-3Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzParameterMin.
Typ.
Max.
Units10%to90%Rise/FallTime[2]6-12psOutputVoltageLevel[3]8Vp-pAdditivejitter(RMS)0.
4ps1dBOutputGainCompressionPointat20GHz16.
5dBmOutputPower20GHz@Pin=15dBm[4]2222dBm40GHz@Pin=15dBm[4]1719.
5dBmPowerDissipation0.
91.
25WNoiseFigure5GHz5.
4dB10&15GHz4.
2dB20GHz4.
6dB25GHz5.
4dB30GHz8.
3dB35GHz7.
4dB40GHz9.
1dB[1]Measuredwitha1GHzaperture[4]VerifiedatRFon-waferprobe.
Vgg1isadjusteduntilthedraincur-rentis200mAandVgg2=1.
5V.
ThedrainvoltageisappliedthroughtheRFoutputportusingabiasteewith5voltsonthebiasTee.
[2]Measurementlimitedbyrise/falltimeofinputreferencesignal[3]Witha2.
7VP-Pinputsignal*Unlessotherwiseindicated,allmeasurementsarefromprobeddieElectricalSpecifications(Continued)*ParameterSymbolMin.
Typ.
Max.
UnitsPositiveSupplyVoltageVD56VPositiveSupplyCurrentID150180225mARFInputPower1216dBmBiasCurrentAdjustVgg1-1.
5-0.
2VOutputVoltageAdjustVgg201.
52VOperatingTemperatureTOP02585°CPowerDissipationPD0.
91.
25WRecommendedOperatingConditionsParameterPDISSTBASETCHRMTF(W)(°C)(°C)(°C/W)(Hrs)ThermalResistancetobacksideofchip1.
2585145485.
8x108Thermalresistancetobacksideofcarrierusing25.
4umof84-1LMITepoxy1.
2585155561.
8x108ThermalResistancetobacksideofchip1.
25110170483.
9x107Thermalresistancetobacksideofcarrierusing25.
4umof84-1LMITepoxy1.
25110180561.
4x107ThermalCharacteristicsParameterSymbolTyp.
UnitsActivationEnergyEA1.
7eVMediantimetoFailure(MTF)@125°CChannelTemperatureMTF6x109HoursReliabilityCharacteristicsMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-4Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comInputReturnLossvs.
FrequencyOutputReturnLossvs.
FrequencyGainvs.
FrequencyNoiseFigurevs.
FrequencyOutputVoltageDeltavs.
ControlVoltageNote:MeasuredPerformanceCharacteristics(TypicalPer-formanceat25°C)Vgg2=1.
5V,Vdd=5V,Idd=200mA(Measureddataobtainedfromdieinatestfixtureunlessotherwisestated)91011121314151617051015202530354045GAIN(dB)FREQUENCY(GHz)-25-20-15-10-50051015202530354045INPUTRETURNLOSS(dB)FREQUENCY(GHz)456789100510152025303540NOISEFIGURE(dB)FREQUENCY(GHz)-35-30-25-20-15-10-50051015202530354045OUTPUTRETURNLOSS(dB)FREQUENCY(GHz)-1.
4-1.
2-1-0.
8-0.
6-0.
4-0.
200.
60.
70.
80.
911.
11.
21.
31.
41.
5OUPUTVOLTAGEDELTA(Vpp)Vgg2PINVOLTAGEHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-5Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comAbsoluteMaximumRatingsInputReferenceSignalPRBS=231-1,2.
1VInput,Datarateof40Gb/sNote:MeasuredPerformanceCharacteristics(TypicalPerformanceat25°C)(Measureddataobtainedfromdieinatestfixtureunlessotherwisestated)OutputReferenceSignalPRBS=231-1,7.
3VInput,Datarateof40Gb/sDrainBiasVoltage(Vdd)+6VdcGainBiasVoltage(Vgg1)-1.
5to0VdcOutputVoltageAdjust(Vgg2)0to+2VdcRFInputPower+18.
5dBm40Gb/sInputVoltagePk-Pk(Vpp)3VThermalResistance(channeltodiebottom)48°C/WChannelTemperature180°CStorageTemperature-65to+150°COperatingTemperature-55to+110°CELECTROSTATICSENSITIVEDEVICEOBSERVEHANDLINGPRECAUTIONSHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-6Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comOutlineDrawingNOTES:1.
ALLDIMENSIONSAREININCHES[MM].
2.
TYPICALBONDPADIS.
004"SQUARE.
3.
BACKSIDEMETALLIZATION:GOLD.
4.
BACKSIDEMETALISGROUND.
5.
BONDPADMETALLIZATION:GOLD.
6.
CONNECTIONNOTREQUIREDFORUNLABELEDBONDPADS.
7.
OVERALLDIESIZE±.
002"DiePackagingInformation[1]StandardAlternateGP-1(GelPack)[2][1]Refertothe"PackagingInformation"sectionfordiepackagingdimensions.
[2]ForalternatepackaginginformationcontactHittiteMicrowaveCorporation.
HMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-7Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comPadNumberFunctionDescriptionInterfaceSchematic1RES1DCcoupled35Ωtermination.
2Vgg1Gatecontrolforamplifier.
Pleasefollow"MMICAmplifierBiasingProcedure"applicationnote.
Seeassemblyforrequiredexternalcomponents.
5Vgg2GateControlforamplifier.
Limitedgaincontroladjust.
SeeAssemblyDiagramforexternalcomponents.
6Vdd&RFOUTRFoutputandDCBias(vdd)fortheoutputstage.
3RFINDCcoupled.
BlockingCapisneeded.
4RES2ACcoupled50Ωtermination.
PadDescriptionsApplicationCircuitHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-8Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comAssemblyDiagramNote1:DrainBias(Vdd)mustbeappliedthroughabroadbandbiasteeorexternalbiasnetworkHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-9Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comDeviceMounting1mildiameterwirebondsareusedonVgg1andVgg2connectionstothecapacitorsand27Ωresistors.
0.
5milx3milribbonbondsareusedonRFconnectionsCapacitorsandresistorsonVgg1andVgg2areusedtofilterlowfrequency,<800MHz,RFpickup35Ωand50Ωresistorsarefabricatedona5milaluminasubstrateandshouldbesuitableforuseasahighfrequencytermination.
Forbestgainflatnessandgroupdelayvariation,eccosorbcanbeepoxiedonthetransmissionlinecoveringthecenter3/4ofthetransmissionlinelength.
EccosorbmayalsobeplacedpartiallyacrosstheVg1padand35Ωresistorforimprovedgainflatnessandgroupdelayvariation.
(Theinsertionofthetransmissionlinehelpsreducelowfrequency,<10GHz,gainripple)Silver-filledconductiveepoxyisusedfordieattachment(BacksideofthedieshouldbegroundedandtheGNDpadsareconnectedtothebacksidemetalthroughVias)DeviceOperationThesedevicesaresusceptibletodamagefromElectrostaticDischarge.
Properprecautionsshouldbeobservedduringhandling,assemblyandtest.
TheinputtothisdeviceshouldbeAC-coupled.
Toprovidethetypical8Vppoutputvoltageswing,a2.
7VppAC-cou-pledinputvoltageswingisrequired.
Atthisoutputlevel,thedevicewillbein1dBto3dBofcompression.
DevicePowerUpInstructions1.
Groundthedevice2.
BringVgg1to-0.
5V(nodraincurrent)3.
BringVgg2to+1.
5V(nodraincurrent)4.
BringVddto+5V(150mAto225mAdraincurrent)(Initiallythedraincurrentwillrisesharplywithasmalldrainvoltage,butwillwillflattenoutasVddapproaches5V)Vgg1maybevariedbetween-1Vand0Vtoprovidethedesiredeyecrossingpointpercentage(i.
e.
50%crosspoint)andalimitedcrosspointcontrolcapability.
Vddmaybeincreasedto+5.
5Vifrequiredtoachievegreateroutputvoltageswing.
Vgg2maybeadjustedbetween+1.
5Vand+0.
3Vtovarytheoutputvoltageswing.
DevicePowerDownInstructions1.
Reversethesequenceidentifiedaboveinsteps1through4.
HMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-10Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comMounting&BondingTechniquesforMillimeterwaveGaAsMMICsThedieshouldbeattacheddirectlytothegroundplaneeutecticallyorwithconductiveepoxy(seeHMCgeneralHandling,Mounting,BondingNote).
50OhmMicrostriptransmissionlineson0.
127mm(5mil)thickaluminathinfilmsubstratesarerecommendedforbringingRFtoandfromthechip(Figure1).
If0.
254mm(10mil)thickaluminathinfilmsubstratesmustbeused,thedieshouldberaised0.
150mm(6mils)sothatthesurfaceofthedieiscoplanarwiththesurfaceofthesubstrate.
Onewaytoaccom-plishthisistoattachthe0.
102mm(4mil)thickdietoa0.
150mm(6mil)thickmolybdenumheatspreader(moly-tab)whichisthenattachedtothegroundplane(Figure2).
Microstripsubstratesshouldbeplacedasclosetothedieaspossibleinordertominimizebondwirelength.
Typicaldie-to-substratespacingis0.
076mmto0.
152mm(3to6mils).
HandlingPrecautionsFollowtheseprecautionstoavoidpermanentdamage.
Storage:AllbaredieareplacedineitherWaffleorGelbasedESDprotec-tivecontainers,andthensealedinanESDprotectivebagforshipment.
OncethesealedESDprotectivebaghasbeenopened,alldieshouldbestoredinadrynitrogenenvironment.
Cleanliness:Handlethechipsinacleanenvironment.
DONOTattempttocleanthechipusingliquidcleaningsystems.
StaticSensitivity:FollowESDprecautionstoprotectagainstESDstrikes.
Transients:Suppressinstrumentandbiassupplytransientswhilebiasisapplied.
Useshieldedsignalandbiascablestominimizeinductivepick-up.
GeneralHandling:Handlethechipalongtheedgeswithavacuumcolletorwithasharppairofbenttweezers.
Thesurfaceofthechiphasfragileairbridgesandshouldnotbetouchedwithvacuumcollet,tweezers,orfingers.
MountingThechipisback-metallizedandcanbediemountedwithAuSneutecticpreformsorwithelectricallyconductiveepoxy.
Themountingsurfaceshouldbecleanandflat.
EutecticDieAttach:A80/20goldtinpreformisrecommendedwithaworksurfacetemperatureof255°Candatooltemperatureof265°C.
Whenhot90/10nitrogen/hydrogengasisapplied,tooltiptemperatureshouldbe290°C.
DONOTexposethechiptoatemperaturegreaterthan320°Cformorethan20seconds.
Nomorethan3secondsofscrubbingshouldberequiredforattachment.
EpoxyDieAttach:Applyaminimumamountofepoxytothemountingsurfacesothatathinepoxyfilletisobservedaroundtheperimeterofthechiponceitisplacedintoposition.
Cureepoxyperthemanufacturer'sschedule.
WireBondingRFbondsmadewith0.
003"x0.
0005"ribbonarerecommended.
Thesebondsshouldbethermosonicallybondedwithaforceof40-60grams.
DCbondsof0.
001"(0.
025mm)diameter,thermosonicallybonded,arerecommended.
Ballbondsshouldbemadewithaforceof40-50gramsandwedgebondsat18-22grams.
Allbondsshouldbemadewithanominalstagetemperatureof150°C.
Aminimumamountofultrasonicenergyshouldbeappliedtoachievereliablebonds.
Allbondsshouldbeasshortaspossible,lessthan12mils(0.
31mm).
0.
102mm(0.
004")ThickGaAsMMICRibbonBond0.
076mm(0.
003")RFGroundPlane0.
127mm(0.
005")ThickAluminaThinFilmSubstrateFigure1.
0.
102mm(0.
004")ThickGaAsMMICRibbonBond0.
076mm(0.
003")RFGroundPlane0.
150mm(0.
005")ThickMolyTab0.
254mm(0.
010"ThickAluminaThinFilmSubstrateFigure2.
HMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHzMICROWAVE&OPTICALDRIVERAMPLIFIERS-CHIP44-11Forprice,delivery,andtoplaceorders,pleasecontactHittiteMicrowaveCorporation:20AlphaRoad,Chelmsford,MA01824Phone:978-250-3343Fax:978-250-3373OrderOn-lineatwww.
hittite.
comNotesHMC-AUH232v02.
0209GaAsHEMTMMICMODULATORDRIVERAMPLIFIER,DC-43GHz
- 2.7www232sihu相关文档
- RTSwww232sihu
- notedwww232sihu
- 光纤www232sihu
- pinwww232sihu
- 波仕卡:RS-232/RS-485
- 转换www232sihu
星梦云-100G高防4H4G21M月付仅99元，成都/雅安/德阳
商家介绍：星梦云怎么样，星梦云好不好，资质齐全，IDC/ISP均有，从星梦云这边租的服务器均可以备案，属于一手资源，高防机柜、大带宽、高防IP业务，一手整C IP段，四川电信，星梦云专注四川高防服务器,成都服务器,雅安服务器,。活动优惠促销:1、成都电信夏日激情大宽带活动机（封锁UDP，不可解封）：机房CPU内存硬盘带宽IP防护流量原价活动价开通方式成都电信优化线路2vCPU2G40G+60G21...
星梦云60元夏日促销，四川100G高防4H4G10M，西南高防月付特价
星梦云怎么样?星梦云好不好，资质齐全，IDC/ISP均有，从星梦云这边租的服务器均可以备案，属于一手资源，高防机柜、大带宽、高防IP业务，一手整C IP段，四川电信，星梦云专注四川高防服务器,成都服务器,雅安服务器 。官方网站：点击访问星梦云官网活动方案：1、成都电信年中活动机（封锁UDP，不可解封）：机房CPU内存硬盘带宽IP防护流量原价活动价开通方式成都电信优化线路4vCPU4G40G+50...
LOCVPS新上日本软银线路VPS,原生IP,8折优惠促销
LOCVPS在农历新年之后新上架了日本大阪机房软银线路VPS主机，基于KVM架构，配备原生IP，适用全场8折优惠码，最低2GB内存套餐优惠后每月仅76元起。LOCVPS是一家成立于2012年的国人VPS服务商，提供中国香港、韩国、美国、日本、新加坡、德国、荷兰、俄罗斯等地区VPS服务器，基于KVM或XEN架构(推荐选择KVM)，线路方面均选择国内直连或优化方案，访问延迟低，适合建站或远程办公使用。...
www232sihu为你推荐
-
蘑菇街美丽说蘑菇街美丽说唯品会天猫京东。女生买衣服，哪个好二层交换机二层交换机是什么意思，三层呢虚拟专用网intranet，extranet，虚拟专用网与internet有什么区别与联系三星s8什么时候上市三星s8什么时候上市 三星s8上市时间网站排名靠前怎么让自己的网站排名靠前中国杀毒软件排行榜谁知道世界杀毒软件排名？关闭qq相册图标如何关闭QQ相册的图标优锁死神之戒链的刀里新人物有哪些液晶显示器电源维修谁知道液晶显示器电源板 维修大约要花多少钱？清华同方的。adobephotoshop教程Photoshop从头学起精品教程