TDRddr2内存价格

6/6/2005SouthwestTestWorkshop2005DDR2DRAMHigh-FrequencyTestatProbe(HFTAP)MasahideOzawaElpidaMemory,Inc.
YoichiFunatokoFormFactorInc.
,AsiaSouthwestTestWorkshop2005p.
2SouthwestTestWorkshop20056/6/2005Elpida/FFIPresentationOutlineIntroductionDDR2DRAMwafer-level-final-sorttestsobjectivesandgoalsHighperformanceprobingtechnologysolutionNewprobingtechnologyinternalqualificationCustomerevaluationSummaryandconclusionFollowonworkp.
3SouthwestTestWorkshop20056/6/2005Elpida/FFIWafer-LevelFinal-SortChallenge20042005Elpida:333MHzDDR2DRAMFFI:K3[x30DUT]533MHztesterSWTW2005DeviceFrequency(MHz)300200100Elpida:100MHzMobileRAMFFI:(S200,shareddriver200MHz)143MHztesterPresentedatSWTW2004p.
4SouthwestTestWorkshop20056/6/2005Elpida/FFIHighPerformanceK3ProbingSolutionHFTAPTMprobingtechnologyFFIK3probingtechnologyK3performanceenablesDDR2testing@333MHz/667Mbsp.
5SouthwestTestWorkshop20056/6/2005Elpida/FFI0.
51.
01.
50.
02.
0-15-10-5-200freq,GHzdB(S(4,1))m1m2m1freq=dB(S(4,1))=-1.
004142.
0MHzm2freq=dB(S(4,1))=-3.
004877.
0MHz0.
51.
01.
50.
02.
0-40-30-20-50-10freq,GHzdB(S(2,1))m3dB(S(3,1))m4m3freq=dB(S(2,1))=-23.
964277.
0MHzm4freq=dB(S(3,1))=-31.
299277.
0MHzFFIAttenuation&Cross-talkSimulationAttenuationCross-talkNear-EndFar-Endp.
6SouthwestTestWorkshop20056/6/2005Elpida/FFIFFIInternalqualificationTpdDistributionbyTDRMeasurement1.
421.
431.
441.
451.
461.
471.
48100.
0%99.
5%97.
5%90.
0%75.
0%50.
0%25.
0%10.
0%2.
5%0.
5%0.
0%maximumquartilemedianquartileminimum1.
48101.
47721.
47201.
46401.
45751.
45151.
44651.
43961.
43251.
42701.
4220QuantilesMeanStdDevStdErrMeanupper95%Meanlower95%MeanN1.
4518250.
00948680.
00035361.
45251911.
4511309720MomentsFFI_(ns)DistributionsChanneltochannelskewwas+/-30psp.
7SouthwestTestWorkshop20056/6/2005Elpida/FFIElpidaEvaluationItemsBasiccharacteristic–Skew–Waveform–Tr/Tf–JitterDeviceevaluation–At-speedtest–CorrelationbetweenwaferandpackageTCK-VDDShmooACparametersIddcurrentp.
8SouthwestTestWorkshop20056/6/2005Elpida/FFIElpidaevaluation:ChanneltoChannelSkewTpdDistributionofHFTAPProbeCards020406080100120140160180-30-25-20-15-10-5051015202530Differencefromaverage[ps]Count23.
27.
73σ[ps]σ[ps]Tpdspec(±75ps)issatisfied.
σ:StandardDeviationn=576(TDRMeasurement)p.
9SouthwestTestWorkshop20056/6/2005Elpida/FFIElpidaevaluation:InputWaveform(Amplitude0.
5VVt:0.
9V)①0ps937.
5ps②0ps1875ps①②③0ps937.
5ps1875ps③p.
10SouthwestTestWorkshop20056/6/2005Elpida/FFIElpidaevaluation:Tr/Tf(Amplitude0.
5V20-80%,Vt:0.
9V)TrTfTr/TfofK3probecard2773043253990100200300400500TrTfTrTfDriverI/OTr/Tf[ps]p.
11SouthwestTestWorkshop20056/6/2005Elpida/FFIElpidaevaluation:Jitter110psEvaluatedat533MHzThesourceofjitteriscausedbyattenuation,crosstalk,andtestertimingcontrol.
JitterofK3issimilarofexistingfinaltesterJitterofK3ProbeCard110114122142050100150RiseFallRiseFallDriverI/OJitter[ps]p.
12SouthwestTestWorkshop20056/6/2005Elpida/FFIElpidaevaluation:At-SpeedTest(1)High-speedWTAssemblyPackageTestPC533PC667PackagingseparatelydividedbytheresultofHigh-speedWTp.
13SouthwestTestWorkshop20056/6/2005Elpida/FFIElpidaevaluation:At-SpeedTest(2)CorrelationResultCorrelationtestresultwassimilartofinaltest.
CorrelationRatioK387.
0%Correlationofat-speedtestbetweenwaferandpackage0%20%40%60%80%100%PC533PC667ResultofWaferTestResultofPackageTestupgradesamegradedowngradep.
14SouthwestTestWorkshop20056/6/2005Elpida/FFIElpidaevaluation:Correlation(coretest)CorrelatedwellTheseareevaluatedathightemperaturewithVddsetin3points.
Whitelinemeans"Beequal"forwafertestandpackagetest.
Ifplotisnearthiswhiteline,correlationisOK.
TestItem:TCK-VDDShmooforsomepatternCoreTestcorrelationofK30102030405001020304050PackageTestResult[ns]WaferTestResult[ns]p.
15SouthwestTestWorkshop20056/6/2005Elpida/FFIACParameterCorrelationofK30.
00.
20.
40.
60.
81.
00.
00.
20.
40.
60.
81.
0PackageTestResult[ns]WaferTestResult[ns]ACParameterCorrelationofK30.
00.
51.
01.
52.
02.
53.
00.
00.
51.
01.
52.
02.
53.
0PackageTestResult[ns]WaferTestResult[ns]Elpidaevaluation:Correlation(ACparameters)1SublineisindicatedtherangeofTimingaccuracy(±100ps)TheseareevaluatedathightemperaturewithVddsetin3points.
TestItem:ACParameters(setup,hold,TCKetc.
)ComparedbypackagetestresultDifferent100ps~150psforsometestitemAvailablefortestingwithadjustmentZoomupp.
16SouthwestTestWorkshop20056/6/2005Elpida/FFIElpidaevaluation:Correlation(ACparameters)2TheseareevaluatedathightemperaturewithVddsetin3points.
40mVhigherVIHforspecificpinsAvailablefortestingwithadjustmentTestItem:ACParameters(VIH/VIL)VIH/VILCorrelationforK30.
000.
040.
080.
120.
160.
000.
040.
080.
120.
16PackageTestResult[V]WaferTestResult[V]AllItemsomeVIHp.
17SouthwestTestWorkshop20056/6/2005Elpida/FFIElpidaevaluation:Correlation(Idd)CorrelatedwellTheseareevaluatedathightemperaturewithVddsetin3points.
TestItem:IddCurrentIddCorrelationforK3050100150200250300050100150200250300PackageTestResult[mA]WaferTestResult[mA]p.
18SouthwestTestWorkshop20056/6/2005Elpida/FFISummaryandConclusionCorrelationtestresultwassimilartofinaltest.
CorrelationbetweenwaferandpackagetestAvailabletodevicemeasurementfor333MHzDDR2DRAMatdevicespeedtestingHigh-frequencywafertestingPC667(333MHz)evaluationpassedallcriteria.
Basiccharacteristics(Waveform,Tr/Tf,Jitter)ResultsObjectivesp.
19SouthwestTestWorkshop20056/6/2005Elpida/FFIFollow-onWorkElpidaMemory,Inc.
–FurtherevaluationforvolumeproductionFormFactor,Inc.
–HigherparallelismK3[x64DUT&x128DUT]–Productionqualificationat>300MHz.
–Customerevaluationfor500MHzandbeyondwithK5