Decms17-010win10

SymbolParameterRatingUnitsVDSDrain-SourceVoltage100VVGSGate-SourceVoltage±20VID@Tc=25℃ContinuousDrainCurrent,VGS@10V12.
8AID@Tc=70℃ContinuousDrainCurrent,VGS@10V11.
2AIDMPulsedDrainCurrent27APD@Tc=25℃TotalPowerDissipation31WTSTGStorageTemperatureRange-55to150℃TJOperatingJunctionTemperatureRange-55to150℃SymbolParameterTyp.
Max.
UnitRθJAThermalResistanceJunction-ambient1---300℃/WRθJCThermalResistanceJunction-Case1---150℃/WBVDSSRDSONID100V135m2.
8AzAdvancedhighcelldensityTrenchtechnologyzSuperLowGateChargezExcellentCdv/dteffectdeclinezGreenDeviceAvailableGeneralDescriptionFeaturesApplicationszHighFrequencyPoint-of-LoadSynchronousSmallpowerswitchingforMB/NB/UMPC/VGAzNetworkingDC-DCPowerSystemzLoadSwitchAbsoluteMaximumRatingsThermalDataSOT-23-3LPinConfigurationProductSummeryTheWST05N10isthehighestperformancetrenchN-ChMOSFETwithextremehighcelldensity,whichprovideexcellentRDSONandgatechargeformostofthesmallpowerswitchingandloadswitchapplications.
TheWST05N10meettheRoHSandGreenProductrequirementwithfullfunctionreliabilityapproved.
N-ChMOSFETPage1www.
winsok.
twDec.
2014WST05N10SymbolParameterConditionsMin.
Typ.
Max.
UnitBVDSSDrain-SourceBreakdownVoltageVGS=0V,ID=250uA100------VBVDSS/TJBVDSSTemperatureCoefficientReferenceto25℃,ID=1mA---0.
067---V/℃RDS(ON)StaticDrain-SourceOn-Resistance2VGS=10V,ID=1A---135mΩVGS=4.
5V,ID=0.
5A---150VGS(th)GateThresholdVoltageVGS=VDS,ID=250uA1.
01.
52.
5VVGS(th)VGS(th)TemperatureCoefficient----4.
2---mV/℃IDSSDrain-SourceLeakageCurrentVDS=80V,VGS=0V,TJ=25℃1uAIDSSDrain-SourceLeakageCurrentVDS=80V,VGS=0V,TJ=25℃5uAIGSSGate-SourceLeakageCurrentVGS=±20V,VDS=0V100nAgfsForwardTransconductanceVDS=5V,ID=1A---2.
4---SRgGateResistanceVDS=0V,VGS=0V,f=1MHz---2.
85.
6ΩQgTotalGateCharge(10V)VDS=80V,VGS=10V,ID=1A---1525nCQgsGate-SourceCharge---3.
25.
2QgdGate-DrainCharge---4.
77.
8Td(on)Turn-OnDelayTimeVDD=50V,VGS=10V,RG=3.
3ΩID=1A---113.
2nsTrRiseTime---7.
416Td(off)Turn-OffDelayTime---3557TfFallTime---9.
125CissInputCapacitanceVDS=15V,VGS=0V,f=1MHz---690pFCossOutputCapacitance---120CrssReverseTransferCapacitance---90SymbolParameterConditionsMin.
Typ.
Max.
UnitISContinuousSourceCurrent1,4VG=VD=0V,ForceCurrent------2.
8AISMPulsedSourceCurrent2,4------5AVSDDiodeForwardVoltage2VGS=0V,IS=1A,TJ=25℃1.
2VtrrReverseRecoveryTimeIF=1A,dI/dt=100A/s,TJ=25℃---16---nSQrrReverseRecoveryCharge---10.
2---nCNote:1.
Thedatatestedbysurfacemountedona1inch2FR-4boardwith2OZcopper,t<10sec.
2.
Thedatatestedbypulsed,pulsewidth≦300us,dutycycle≦2%3.
Thepowerdissipationislimitedby150℃junctiontemperature4.
ThedataistheoreticallythesameasIDandIDM,inrealapplications,shouldbelimitedbytotalpowerdissipation.
ElectricalCharacteristics(TJ=25℃,unlessotherwisenoted)DiodeCharacteristicsN-ChMOSFETPage2www.
winsok.
twDec.
2014WST05N10145220---------0.
01.
02.
03.
04.
05.
000.
511.
522.
5IDDrainCurrent(A)VGS=10VVGS=7VVGS=5VVGS=4.
5VVGS=3V125150200250300246810RDSON(m)ID=1A00.
40.
81.
21.
6200.
30.
60.
9ISSourceCurrent(A)TJ=150℃TJ=25℃0.
20.
611.
41.
8-50050100150NormalizedVGS(th)0.
40.
81.
21.
62.
02.
4-50050100150NormalizedOnResistanceTypicalCharacteristicsVDS,Drain-to-SourceVoltage(V)Fig.
1TypicalOutputCharacteristicsVGS(V)Fig.
2On-Resistancevs.
Gate-SourceVSD,Source-to-DrainVoltage(V)Fig.
3ForwardCharacteristicsofReverseFig.
4Gate-ChargeCharacteristicsTJ,JunctionTemperature(℃)Fig.
5NormalizedVGS(th)vs.
TJTJ,JunctionTemperature(℃)Fig.
6NormalizedRDSONvs.
TJN-ChMOSFETPage3www.
winsok.
twDec.
2014WST05N1010100100015913172125VDSDraintoSourceVoltage(V)Capacitance(pF)F=1.
0MHzCissCossCrss0.
000.
010.
101.
0010.
00100.
000.
11101001000ID(A)TA=25℃SinglePulse1s10ms100msDC100us0.
00010.
0010.
010.
110.
00010.
0010.
010.
11101001000NormalizedThermalResponse(RθJA)PDMD=TON/TTJpeak=TA+PDMxRθJATONT0.
020.
010.
050.
10.
2DUTY=0.
5SINGLEPULSEVDS(V)Fig.
8SafeOperatingAreat,PulseWidth(s)Fig.
9NormalizedMaximumTransientThermalImpedanceFig.
7CapacitanceFig.
10SwitchingTimeWaveformFig.
11GateChargeWaveformN-ChMOSFETPage4www.
winsok.
twDec.
2014WST05N10Attention1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandleapplicationsthatrequireextremelyhighlevelsofreliability,suchaslifesupportsystems,aircraft'scontrolsystems,orotherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.

ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedorcontainedhereininsuchapplications.
2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedinproductsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein.
3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance,characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesoftheperformance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer'sproductsorequipment.
Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalwaysevaluateandtestdevicesmountedinthecustomer'sproductsorequipment.
4,WinsokpowerSemiconductorCO.
,LTD.
strivestosupplyhighqualityhighreliabilityproducts.
However,anyandallsemiconductorproductsfailwithsomeprobability.
Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidentsoreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetootherproperty.
Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.
Suchmeasuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign,andstructuraldesign.
5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinarecontrolledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithoutobtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw.
6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical,includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withoutthepriorwrittenpermissionofWinsokpowerSemiconductorCO.
,LTD.
7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedforvolumeproduction.
Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeorimpliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties.