Isolationcwp-140

1.
Gate2.
Drain3.
SourcePinDefinition:Table1AbsoluteMaximumRatings(TC=25°C,unlessotherisewspecified)BlockDiagramCase:-TO263PackageParameterSymbolUnitDrain-SVoltageourceVDS80VGate-SourceVoltageVGS±25VContinuousDrainCurrentID140APulsedDrainCurrent(Note)1IDM500ASinglePulseyNote2AvalancheEnerg()1225mJPowerDissipationPDW°CTJ/TSTG-55~+175D140N08D140A80VNChannelEnhancementModeowerMOSFET-PRSEMICONDUCTORGenaralDescriptionMechanicalDataOrderingInformationJINANJINGHENGCO.
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CNT25CC=°DSGT25CC=°T100CC=°95VDSRmTypDSon()(Ω)IAD()QgTyp()ProductSummary80V4.
8@10V140115ncFeaturesFastswitchingLowon-resistanceLowgatecharge100%SinglePulseAvalancheEnergyTestEASOperatingJunctionandStorageTemperatureTO-263TO-2638002Parto.
NPackageTypePacagekQuality(box)TO263-TheseNchannelenhancementmodepowermosfetsused-,advancedtrenchtechnologydesignprovidedexcellent.
RdsonandlowgatechargeWhichaccordswiththeRoHS.
standardIsolationVoltageVISO/VMaximumTemperatureforsolderingTL°C300D140N08DD140N08DTape&Reel123Table2.
TCharacteristicshermalTable3.
ElectricalCharacteristics(TJ=25C,unlessotherwisespecified)°ParameterSymbolUnitParameterSymbolOffCharacteristicsDrain-SourceBreakdownVoltageBVDSS80VDrain-SourceLeakageCurrentIDSS1μAGate-SourceLeakageCurrentForward100nAReverse-100nAOnCharacteristics()Note4GateThresholdVoltageVGS(TH)StaticDrain-SourceOn-StateResistance4.
86.
0DynamicCharacteristics()Note5InputCapacitanceCISS4600pFOutputCapacitanceCOSSpF650ReverseTransferCapacitanceCRSS240pFSwitchingCharacteristics()Note5Turn-OnDelayTimeton)d(28nsTurn-OnRiseTimetRns18Turn-OffDelayTime42nsTurn-OffFallTimetf55nsTotalGateChargeQG115nCGate-SourceChargeQGSnC18Gate-DrainChargeQGD46nCDrain-ourceDiodeCharacteristicsndMaximumRatingsSaDrain-SourceDiodeForwardVoltageVSD1.
3VMaximumContinuousDrain-SourceDiodeForwardCurrentIS140AReverseRecoveryTimetrr30nsReverseRecoveryChargeQRRnC52TestConditionsUnitMaxTypMinV0VI250AGSD=,=μV80VV0VDSGS=,=V25VV0VGSDS=,=V25VV0VGSDS=-,=VVI250ADSGSD=,=μV10VI50AGSD=,=V25VV0Vf1MHzDSGSV60VI40ADSD=,=,V10VR6GSGEN=,=ΩV64VI60ADSD=,=,V10VGS=V0VI140AGSS=,=V0VI40AGSF=,=dIdt100AsNote1F/=/μ()24VmΩThermalresistanceCaseJunctiontoRθJc°C/WIGSSRDS(ON)toff)d(JINANJINGHENGCO.
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CNNotes1RepetitiveRatingPulsewidthlimitedbymaximumjunctiontemperature::=.
,=2mHD70AL05V50VV10VStartingT25°CIDDGJS≤300μSDutycycle≤2PulseTest:Pulsewidth%,45Guaranteedbydesignnotsubjecttoproduction,RSEMICONDUCTOR0.
79TO252-85------------3--------------------------------------------------------D140N08D----RSEMICONDUCTORJINANJINGHENGCO.
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CNTypicalcharacteristicsdiagramsD140N08DRSEMICONDUCTORTypicalcharacteristicsdiagramsD140N08DJINANJINGHENGCO.
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CNRSEMICONDUCTORJINANJINGHENGCO.
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CNTypicalcharacteristicsdiagramsTO263PACKAGEOUTLINEDIMENSIONS-DimensionsD140N08DSymbolMINMAXMINMAX0.
1670.
1920.
0420.
0580.
0000.
0100.
0240.
0400.
0470.
0530.
0120.
0240.
3730.
4270.
3340.
3660.
3820.
4060.
1920.
2080.
1760.
2300.
0520.
0920.
0000.
087DimensionsInMillimetersDimensionsInInchesA4.
254.
87A11.
071.
47A200.
25b0.
611.
01b11.
21.
34C0.
30.
6D9.
4810.
84D18.
499.
3E9.
710.
31e4.
885.
28L4.
465.
85L11.
332.
33L202.
2RSEMICONDUCTORJINANJINGHENGCO.
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D140N08D